CN104048599A - Method and system for characterizing light emitting devices - Google Patents
Method and system for characterizing light emitting devices Download PDFInfo
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Abstract
Embodiments as disclosed herein provide a method and system that characterizes physical properties, such as thickness, uniformity, polarization, and/or sizes and locations of defect (e.g. defect density distribution) of crystalline structures grown on or thin films deposited on a substrate of a solid state light emitting device. The embodiments disclosed herein generally include exciting the light emitting device with an energy source and analyze optical energy emitted by the crystalline structures grown on or the thin films deposited on the substrate.
Description
cross-reference to related applications
The title of submitting in current application requirement on March 13rd, 2013 is the U.S. Provisional Patent Application the 61/780th of " method and system of measuring for the thickness to light-emitting crystal structures and consistance ", the right of priority of No. 294, it is incorporated to by reference and all at this.
Technical field
The characteristic that the application relates generally to the structure to Sony ericsson mobile comm ab is carried out the method and system of signature analysis.Particularly relating in the manufacture process of Sony ericsson mobile comm ab photon analysis by crystal structure or film are sent in the time being excited by luminous energy comes thickness, consistance, polarization and/or the defect concentration of for example film to the crystal structure at Grown or deposition and distributes and measure.
Background technology
Have many methods of the film of the crystal structure at Grown or deposition being carried out to signature analysis, substrate is for example the wafer of for example, making with various materials (silicon, sapphire, SiC, GaAs, InP).Most methods in these methods is actually destructive, relates to the material of crystal structure or film is cut or etching.The method of these invasive can be destroyed the functional of tested structure and increase production cost and waste.The method of these invasive generally cannot be used for testing each device in manufacture process.
Some method is nondestructive, but they can need special and expensive test equipment.For example, some method is used electromagnetic radiation (for example radio, ultraviolet ray, X ray), with permission, test structure is carried out to signature analysis mode and test structure are mutual.Signature analysis is carried out in reflection strength, absorption, diffraction or polarity measurement by the radiation to launched.Can need special equipment to generate stimulating radiation.
Summary of the invention
In the industry of manufacture Sony ericsson mobile comm ab, manufacturer is for very interested at determining in early days in the physical characteristics of the crystal structure of Grown or the film of deposition of manufacture process, and the physical characteristics of crystal structure is for example consistent. the size of property, thickness, polarization, defect and position.The quality of luminescent device is the consistance of quantity based on defect and type, film and/or other physical characteristicss.
Existing the method and system that the film of the crystal structure at Grown or deposition is carried out to signature analysis is non-invasive demand.The method and system that embodiment described herein provides a kind of physical characteristics of the film to the crystal structure at Grown or deposition to carry out signature analysis, physical characteristics is for example size and position (for example defect concentration distribution) of thickness, consistance, polarization, defect.Embodiment described herein generally comprises: last other ray structure of substrate (for example crystal structure of growth or the film of deposition) is excited; The luminous energy (for example photon) that ray structure is launched is analyzed the physical characteristics of ray structure.
In some embodiments, can excite tested luminescent device electricity as the energy.Can be excited by electricity and launch photon (for example luminous energy) at the crystal structure of Grown or the film of deposition.Can analyze the physical characteristics that launched light is measured and deconvolution (de-convolve) for example carrys out other structure to transmitting photon.In some embodiments, can carry out deconvolution with at least one Gaussian function.In some embodiments, each Gaussian function can with of other structure of transmitting photon independently physical characteristics be associated.
The overall light emission measure of spectral power distribution (SPD) form is the convolution in luminescent device one or more emittance (for example photon) source of launching.In some embodiments, can collect with deconvolution and analyze SPD the SPD of ray structure (for example, at the crystal structure of Grown or the film of deposition).
In some embodiments, can analyze the deconvolution SPD of launched photon.The deconvolution SPD of the photon of launching is for example for example, to position, size, thickness, the defect distribution (dislocation structure) of the film of crystal structure at Grown or deposition relevant.In some embodiments, can calculate the numerical value wavelength parameter of deconvolution SPD.In some embodiments, the mapping of the false color of the numerical value wavelength parameter of the each device on available wafer makes the nonuniformity of light emission measure visual.In some embodiments, one or more deconvolution SPD can be used for building false color mapping.In some embodiments, each deconvolution SPD can be associated with the change in photo emissions structure.By deconvolution SPD is analyzed, can analyze multiple photo emissions structures.
Brief description of the drawings
Fig. 1 shows an embodiment of Sony ericsson mobile comm ab.
Fig. 2 shows the method according to this invention carries out an embodiment of the proving installation of the system of signature analysis to luminescent device.
Fig. 3 shows the method according to this invention to excite radiowave luminescent device to be carried out to another embodiment of the proving installation of the system of signature analysis.
Fig. 4 exemplarily shows the distribution as the thickness of the phosphorescence luminescent layer that is deposited on the blue phosphorescent high brightness LED on wafer substrate of crystal grain.
Fig. 5 shows the exemplary false color mapping in wafer substrate level.
Fig. 6 A shows the exterior view of the exemplary space distribution of each parameter of the photon that the luminescent device of the method according to this invention launches to 6G.Fig. 6 A shows the space distribution of the predominant wavelength of launched photon.Fig. 6 B shows the first set of the space distribution of color parameter to 6D.Fig. 6 B shows the space distribution of photon intensity.Fig. 6 C shows the space distribution of photon centre wavelength.Fig. 6 D shows the space distribution of photon curve width.Fig. 6 E shows the second set of the space distribution of color parameter to 6G.Fig. 6 E shows the space distribution of photon intensity.Fig. 6 F shows the space distribution of photon centre wavelength.Fig. 6 G shows the space distribution of photon curve width.
Embodiment
The overall light emission measure that is for example SPD form is the convolution of each photon source, for example, in Sony ericsson mobile comm ab, find this photon source (for example quantum well or QW).In an embodiment of the invention, signal processing method relates to and can carry out deconvolution to SPD with one or more Gaussian functions, to analyze by the photon that individual other ray structure is launched, last other ray structure of substrate (for example, at the crystal structure of Grown or the film of deposition) is carried out to signature analysis.Analysis result by other ray structure on substrate combines in spatial relationship, can carry out signature analysis to the physical characteristics of the ray structure on substrate, physical characteristics is for example size and the position of consistance, polarization, doping density, lattice dislocation and/or the defect of thickness, the distribution of material of layer.
Typical Sony ericsson mobile comm ab, for example high brightness LED (HBLED), comprises at least one ray structure.Individual other ray structure can be launched in the time being excited has photon of different nature, and this character is for example quantity (for example intensity) and energy (for example wavelength).The quantity of the photon of these transmittings and/or energy can be relevant to the physical characteristics of ray structure and/or operating conditions.The physical characteristics of ray structure for example comprises: the size of thickness, consistance, polarization and/or defect and position (for example defect concentration distribution).Operating conditions for example comprises: temperature, the character (for example forward current) of the energy (for example electricity) that stimulates, continuation and the device age of the stimulation energy.Term " device age " generally refers to that the performance (for example luminescent properties) of device depends on the change of time.By the Gaussian function with one or more, overall light emission measure is carried out to deconvolution, can obtain the set of the one or more color parameter of the physical characteristics that has reflected ray structure.
Fig. 1 shows the embodiment of Sony ericsson mobile comm ab 100, for example, be HBLED.Sony ericsson mobile comm ab 100 has multiple layers.In the embodiment illustrating, Sony ericsson mobile comm ab 100 has sapphire layer 101.The layer depositing successively at the top of sapphire layer 101 can comprise gallium nitride cushion (GaN cushion) 102, N-shaped gallium nitride (n-GaN) layer 103, Multiple Quantum Well (MQW) 104, p-type gallium nitride (p-GaN) layer 105.P contact layer 106 can be deposited on the top of p-GaN layer 105.N contact layer 107 can be deposited on the top of n-GaN layer 103.MQW104 can for example, be excited to launch photon by the energy (electricity).
With reference to Fig. 2, install 200 pairs of Sony ericsson mobile comm abs 210 and carry out signature analysis, Sony ericsson mobile comm ab 210 comprises: detector 202, component carrier 208 and be configured to the moveable platform 209 of moving device carrier 208.Sony ericsson mobile comm ab 210 can be positioned in component carrier 208, moves with moveable platform 209.
The processing that individual other ray structure (crystal grain 201) on substrate 211 is carried out to signature analysis can comprise is fixed on component carrier 208 by substrate 211.Moveable platform 209 can move in two dimension, thereby individual other crystal grain 201 can align the characteristic of crystal grain 201 is tested with detector 202.
In the time that the crystal grain 201a to special tests, detector 202 can be electrically connected with tested crystal grain 201a.Detector 202 is also electrically connected on external power source (not shown).Thereby the crystal grain 201a testing can be excited transmitting photon by electricity.The integrating sphere 203 being positioned on tested crystal grain 201a is collected launched photon.Sensor 204 is configured at least a portion of the photon of launching by integrating sphere 203 to sample.This sampling can accurately represent the overall light emission measure from tested crystal grain 201a.The signal receiving is sent to spectrometer 205 by sensor 204.Spectrometer 205 can be configured to overall light emission measure is converted to SPD.Color analysis computing unit 206 can be configured to be analyzed SPD, for example comprise the photon that tested crystal grain 201a launches deconvolution, relevant, estimate, demarcate.
In some embodiments, color analysis computing unit 206 can comprise central processing unit, memory device, the display device that the data that are stored in memory device are shown, make user and the mutual interface of computing unit 206.In some embodiments, color analysis computing unit 206 can comprise central processing unit, memory device, the display device that the data that are stored in memory device are shown, for the interface of computing unit 206 swap datas.
In the time that crystal grain 201 is tested, can control the temperature of crystal grain 201, the electric current that gives crystal grain 201 and device age.The open US20110025337 of United States Patent (USP) on November 26th, 2013 bulletin be No. the 8th, 593,148, United States Patent (USP), a kind of method of in the time that HBLED is tested, temperature and/or electric current being controlled is disclosed.It is incorporated to by reference and all at this.
Crystal grain 201 as shown in Figure 2 can be excited by other energy.For example, in another one proving installation 300 as shown in Figure 3, external light source 307 can be used for the crystal grain 301 of excited light-emitting device 310.External light source 307 can have at least some assemblies to crystal grain 301, for example phosphorescent layer, and what excite excites radiowave.
The light that the crystal grain 301a testing launches is sampled by integrating sphere 303 by sensor 304.The signal receiving is sent to spectrometer 305 by sensor 304.Preferably can be used alone or in combination the power supply in external light source 307 and Fig. 2.Generally also preferably can use the energy that can for example, excite crystal grain (crystal grain 210,310).
Device shown in Fig. 2 and Fig. 3 is preferably exemplary.The device that the physical characteristics of ray structure is carried out to signature analysis generally comprises: be configured to the detector that the ray structure to luminescent device (or region) excites with the energy; Be configured to collect the device of the photon that ray structure (or region) excites; And the device of total SPD of measurement of photon.This device can comprise and being configured to by using one or more Gaussian functions to carry out deconvolution to obtain the device of a series of color parameters of describing the photon launched of ray structure (or region) to total SPD.Thereby can be configured to mobile luminescent device, this device can carry out signature analysis to different ray structures (or region).Can obtain the space distribution of for example color parameter, can be used for the characteristic of the luminescent device that is reflected in wafer substrate level.
In one embodiment, the measured overall light emission measure of total SPD form is analyzed, this analysis configuration is to be one or more Gaussian function or other mathematical functions (for example ANALOGY OF BOLTZMANN DISTRIBUTION, Airy function) by total SPD deconvolution.Each Gaussian function can comprise one or more color parameters, for example various intensity, curve width and/or centre wavelength.Then can use the characteristic of other Gaussian function for example, to measure or signature analysis the each physical characteristics in crystal grain (crystal grain 201 or 301).Then can use the space distribution of the characteristic (for example color parameter) of the Gaussian function of the crystal grain on luminescent device for example, to measure or signature analysis the each physical characteristics in luminescent device (Sony ericsson mobile comm ab 210 or 310), thickness, consistance, polarity and/or defect concentration that physical characteristics can be included in the crystal structure of Grown or the film of deposition distribute.
For example, in one embodiment, the overall light emission measure of HBLED is the convolution of all other emitting structurals, and emitting structural is for example for example, emitting structural in electric MQW, MQW region (heavy hole, light hole, optical phonon, the quantum tunneling) stimulating, phosphorescence that light stimulates etc.Represent overall light emission measure with total SPD.The Gaussian function of one or more by using (for example two or more) carries out signature analysis to each emitting structural.Signature analysis processing comprises carries out deconvolution to total SPD with at least one Gaussian function.Each Gaussian function can specify with one or more color parameters (or their combination), color parameter for example: the width (for example standard deviation) of the height (for example intensity) of peak of curve, the center (for example centre wavelength) of peak value and curve.In the open US20120038363A1 of United States Patent (USP), recorded a kind of method that uses one or more color parameters SPD to be carried out to modeling, it is incorporated to by reference and all at this.
In some embodiments, the signature analysis processing of SPD can comprise that application estimation processing is optimized the color parameter of Gaussian function, thereby only can produce the mistake of this minimum special estimation processing defined to the summation of Gaussian function.Can apply different estimation processing, for example least-squares estimation.Be understandable that, also can use other to estimate to process.
Color parameter for example, for example, is associated with the physical characteristics of the ray structure (crystal structure or film) of for example luminescent device (HBLED).The physical characteristics of these luminescent devices for example can comprise: the thickness of layer, the consistance of distribution of material, doping density, lattice dislocation, defect concentration distribute etc.By individual other ray structure is carried out to signature analysis, can carry out signature analysis to the physical characteristics of luminescent device.
In one embodiment, the Sony ericsson mobile comm ab of testing can be for example monochromatic HBLED.Available three Gaussian functions carry out signature analysis to total SPD of monochromatic HBLED, can cause the mistake lower than 0.1%.In this embodiment, can produce nine color parameters (three of each Gaussian functions).Estimate to process that color parameter is optimized, process thereby the summation of three Gaussian functions has produced with special estimation the curve conforming to most.
In another embodiment, the Sony ericsson mobile comm ab of testing can be for example blue phosphorescent HBLED, a part for the blue light that wherein active region is launched by for example with longer wavelength in turn luminous phosphorescent layer absorb.This blue phosphorescent HBLED refers to white light LEDs sometimes.The total SPD of this blue phosphorescent HBLED in this embodiment can generate with six Gaussian functions, and has generated 18 color parameters (three of each Gaussian functions).In this embodiment, color parameter can be used for the mutual result of phosphorescence in blue phosphorescent HBLED to analyze.Be the SPD of given blue phosphorescent HBLED and the Conversion of Energy function of phosphorescence, color parameter can be used for carrying out alternately analysis and prediction between blue light and phosphorescence.More long wavelength's the light that has that can launch with phosphorescent layer the contribute energy of the blue light from active region in deconvolution is processed separates.For different structure, the contribution of for example active region and phosphorescence, separately carries out signature analysis by the different sets of color parameter.Be understandable that, method described herein can be used for mutual to other phosphorescence or comprises for example RGB white light LEDs of more than one LED() Sony ericsson mobile comm ab carry out analysis and prediction, it is mutual that it is not limited to blue light/phosphorescence.
Get back to Fig. 2, in one embodiment, the signature analysis being undertaken Sony ericsson mobile comm ab 200 by color analysis computing unit 206.Color analysis computing unit 206 is estimated optimal colors parameter and is carried out deconvolution.In another embodiment, color analysis computing unit 206 is at one or more figure, and for example two-dimentional false color shines upon, middle Show Color parameter.It is visual that this data display contributes to make to be distributed in the physical characteristics of the ray structure on the substrate of luminescent device.In another embodiment, color analysis unit 206 can comprise central processing unit, internal memory storage element and data presentation device.In another embodiment, color analysis unit 206 can comprise central processing unit, internal memory storage element and for the interface of computing unit 206 swap datas.
The SPD of solid luminescent structure can change by the variation of device condition, and device condition is for example the device age of time remaining and the luminescent device itself of device temperature, stimulating current intensity, stimulating current.In some embodiments, can realize the associated prediction between SPD and the variation of device condition.
In one embodiment, can under different device temperatures, carry out signature analysis to SPD and can obtain the set of a series of corresponding color parameters.Can set up the association between SPD and device temperature.SPD can deconvolution be color parameter, and it is how to change according to the function of device temperature that color parameter can be used for describing photo emissions.
In another embodiment, can under different stimulating current intensity, carry out signature analysis to SPD and can obtain the set of a series of corresponding color parameters, thereby can set up the association that between photo emissions, the function according to strength of current changes.In another embodiment, can under the continuation of different stimulating currents, carry out signature analysis to SPD and can obtain the set of a series of corresponding color parameters, thereby can set up the association changing according to the function of the continuation of stimulating current between photo emissions.In another embodiment, can under the different period of ray structure, carry out signature analysis to SPD and can obtain the set of a series of corresponding color parameters, thereby can obtain the change of photo emissions and the association between the age of luminescent device.
For example can interior these associations of setting up be set in experiment.Can be by obtaining the associated prediction between SPD and device condition with these associations in the time that the luminescent device to actual carries out signature analysis.
In some embodiments, the space correlation of the different ray structure of luminescent device or the color parameter in region is used in wafer substrate level the physical characteristics of luminescent device is carried out to signature analysis.
In one embodiment, the distribution consistance that color parameter is used in wafer substrate level crystal structure is measured.Sony ericsson mobile comm ab can comprise one or more crystal grain.Each crystal grain can comprise at least one ray structure, for example QW or MQW.Can for example carry out signature analysis and obtain by SPD that the ray structure on each crystal grain is launched the set of color parameter with Gaussian function.This analysis can be on multiple structures of luminescent device or region, carried out and the set of color parameter can be obtained for each structure or region.In some embodiments, can carry out this processing to the each crystal grain on luminescent device.By the space correlation of the color parameter that obtains from each crystal grain, the structural integrity that can obtain wafer substrate level distributes and makes it visual.
For example, the set of color parameter can be used for the phosphorescent layer thickness of crystal grain to carry out signature analysis.Fig. 4 shows the distribution of the thickness of the phosphorescent layer of the blue phosphorescent HBLED being deposited on substrate.Darker part is relevant to relatively thick phosphorescent layer, and brighter part is relevant to relatively thin phosphorescent layer.Being distributed with of darker part and brighter part helps make the distribution of layer thickness visual in wafer substrate level.
Be understandable that illustrated in fig. 4 is actual conditions but not a kind of restriction.From substrate to substrate, can repeat similar processing.In some embodiments, can by different substrates or batch distribution compare to realize to substrate to substrate or batch to batch the conforming measurement of variation.Embodiment described herein can provide and can accurately and fast carry out and method of quality control that cost performance is high.
False color mapping for example also contributes to make in the consistance of the luminescent device of wafer substrate level visual.
Fig. 5 shows and measures and visual by the variation of false color mapping 500,501,502 and/or 503 crystal structure to HBLED in wafer substrate level and consistance.For example use is similar to the proving installation shown in Fig. 2 or Fig. 3 each crystal grain of Sony ericsson mobile comm ab is individually tested.Can carry out Collection and analysis to the SPD measuring from each crystal grain.Space distribution based on crystal grain is used false color to mark and draw the numerical value wavelength parameter of SPD in wafer substrate level, makes the numerical value wavelength parameter of SPD visual.Available different colours, for example green, red and purple, represent the distribution of numerical value wavelength parameter.For example, in some embodiments, available green representative is from the peak wavelength value of 445-449nm, and available purple representative is from the peak wavelength value of 450-454nm, and available red representative is from the peak wavelength value of 455-459nm.
Represent that false color mapping 500 that predominant wavelength generally distributes can further carry out deconvolution the subset changing is analyzed.In the embodiment illustrating, the subset 501,502 and/or 503 that can shine upon by false color makes the subset of variation visual.False color mapping 500 can deconvolution be preferably the subset that comprises more false color mappings.False color mapping 500 is gathering or the convolution that change in some emitting structurals.By false color being shone upon to the subset 501,502 and/or 503 that 500 deconvolution are false color mapping, can individually carry out signature analysis to different emitting structurals.Each subset (for example false color mapping 501,502 and/or 503) of false color mapping 500 can comprise different color parameters, for example different wavelength.
Also can similarly analyze multiple substrates of the production batch from different, thus can to batch to batch variation analyze.
Embodiment described herein is preferably nondestructive, does not rely on radiation and excites crystal structure.Because tested structure can be carried out signature analysis under normal operating condition, therefore this embodiment can directly be applied on the production line in manufacture process.Embodiment described herein also can allow on the production line in manufacture process, each device to be tested.The quality that this contributes to significantly to reduce manufacturing cost and improves device.
Embodiment described herein preferably also can be applicable to other devices, for example laser instrument, or other comprise photodiode or transistorized device.Embodiment described herein generally can be applicable to comprise the device that can launch the solid-state structure (for example LED, Organic Light Emitting Diode (OLED) etc.) of photon when by energy source excitation.Can use mathematical distribution when the solid-state structure of transmitting photon, for example Boltzmann or Gaussian distribution, can be applicable to the embodiment described in this while carrying out modeling.Even for example, when mixing (applying phosphor film on blue led) with the mutual thing of another photon, ray structure can be applicable to the embodiment described in this.
Color parameter is generally used for the form of a series of gauss of distribution function and represents SPD.For example, in some embodiments, LED spectral emissions can represent exactly with 2 or 3 Gaussian functions and order of magnitude term.Can carry out mathematics manipulation (for example standardization and/or scale) to the coefficient of Gaussian function for the application on manufacturing.Collection to coefficient refers to color parameter.
In some embodiments, can use three color parameters for each Gaussian function.For example, in the time that LED transmitting represents with two Gaussian functions, can use six color parameters and an order of magnitude parameter altogether.
Indivedual types (thickness, doping level, dislocation size etc.) of the variation in the physical characteristics of deposited film can have appreciable impact to one or more indivedual color parameters.Therefore, color parameter can be used for the variation on film differentiate, locate and round.
In some embodiments, in the time having assessed phosphorescent layer, can need more Gaussian function to represent photo emissions.For example, can represent mutual between blue led and phosphorescent layer can altogether comprise 11 to 13 color parameters with five or six Gaussian functions.Can describe blue led transmitting and can describe with two to three remaining Gaussian functions the photo emissions of phosphorescent layer with two to three Gaussian functions.Available color parameter is divided into the built-up section of blue led and phosphorescence photo emissions effectively from the transmitting of phosphorescent layer with from the transmitting of blue led.In some embodiments, for example, in experiment arranges, can obtain the spectrum of blue led spectrum transmitting, thereby can in experiment, obtain the color parameter of describing blue led.The energy conversion character of phosphorescent layer be can carry out the analysis of blueness/phosphorescence color parameter to determine, quality and the variation of phosphorescent layer can be used for determining.Embodiment described herein can expand to the application that comprises the photo emissions structure (for example phosphorescent lamp or fluorescent light) that is greater than a LED type, be greater than a kind of LED color and/or other types.
Exemplary embodiment
Fig. 6 A shows the exemplary embodiment of the space distribution of various parameters to 6G, comprise predominant wavelength and the shades of colour parameter of luminescent device.Fig. 6 A shows the SPD of luminescent device with the space distribution of the predominant wavelength of the photon launched.Fig. 6 B shows to 6G multiple set that the SPD deconvolution of luminescent device is color parameter.In shown embodiment, two set that SPD deconvolution is color parameter.The first set (CP0) of the color parameter being provided by the first Gaussian function is provided to 6D Fig. 6 B.Fig. 6 B is the space distribution of the intensity of launched photon.Fig. 6 C is the space distribution of launched photon centre wavelength.Fig. 6 D is the space distribution of launched photon curve width.For example can gather to illustrate that the consistance of luminescent device distributes with the CP0 of color parameter.
Fig. 6 E show to 6G the color parameter that provided by the second Gaussian function and gather (CP1).Fig. 6 E is the space distribution of the intensity of launched photon.Fig. 6 F is the space distribution of launched photon centre wavelength.Fig. 6 G is the space distribution of launched photon curve width.For example can gather to illustrate with the CP1 of color parameter the thickness distribution of luminescent device.
According to above-mentioned record, these and other features of the present invention are visible for those those skilled in the art.Be understandable that, various obvious aspect the present invention can change, all changes are all within the spirit and scope of the present invention.And, in all sorts of ways to implement system and method that color to luminescent device and intensity quantizes all within the scope of the present invention.
Claims (12)
1. a method of Sony ericsson mobile comm ab being carried out to signature analysis, is characterized in that, comprises the following steps:
Provide the energy to excite the light-emitting zone of Sony ericsson mobile comm ab;
Collect the photon that light-emitting zone is launched;
Total spectral power distribution of the photon that acquisition light-emitting zone is launched;
By being carried out to deconvolution, total spectral power distribution obtains at least one color parameter; And
Based at least one color parameter, the physical characteristics of light-emitting zone is carried out to signature analysis.
2. method according to claim 1, is characterized in that,
Obtain at least one color parameter and comprise by total spectral power distribution being carried out to deconvolution: total spectral power distribution is carried out to deconvolution with one or more Gaussian functions.
3. method according to claim 1, is characterized in that,
Color parameter comprises or combination in the intensity, curve width, centre wavelength of photon.
4. method according to claim 1, is characterized in that, further comprising the steps:
Provide the energy to excite the second light-emitting zone of Sony ericsson mobile comm ab;
Collect the photon that the second light-emitting zone is launched;
Obtain total spectral power distribution of the photon that the second light-emitting zone launches;
By being carried out to deconvolution, total spectral power distribution of the second light-emitting zone obtains at least one color parameter;
Obtain the space distribution of the color parameter of light-emitting zone and the color parameter of the second light-emitting zone; And
Space distribution based on color parameter is carried out signature analysis to the physical characteristics of Sony ericsson mobile comm ab.
5. method according to claim 1, is characterized in that,
Light-emitting zone is the crystal structure on Sony ericsson mobile comm ab.
6. method according to claim 1, is characterized in that,
Light-emitting zone is the region of the film that deposits on the substrate of Sony ericsson mobile comm ab.
7. method according to claim 1, is characterized in that,
The physical characteristics of Sony ericsson mobile comm ab comprises: one or combination in the manufacture process of Sony ericsson mobile comm ab in thickness, consistance, polarization and/or the defect concentration of the crystal structure of Grown or the film of deposition distribute.
8. a device that luminescent device is carried out to signature analysis, is characterized in that, comprising:
Power supply, this power configuration is be connected in the light-emitting zone of luminescent device and this light-emitting zone is excited;
Sensor, the photon induction that this sensor is configured to light-emitting zone to launch;
Spectrometer, the photon that this spectrometer is configured to sensor to respond to is converted to spectral power distribution; And
Color analysis computing unit, this color analysis computing unit is configured to, with one or more Gaussian functions, spectral power distribution is carried out to deconvolution,
Specify each Gaussian function by least one color parameter,
With at least one color parameter, light-emitting zone is carried out to signature analysis thus.
9. device according to claim 8, is characterized in that,
Light-emitting zone is the crystal structure on the substrate of luminescent device.
10. device according to claim 8, is characterized in that,
Light-emitting zone is the region of the film that deposits on the substrate of luminescent device.
11. devices according to claim 8, is characterized in that,
Color parameter is configured to optimum, thereby according to estimating to process, the difference between spectral power distribution and the total of Gaussian function is minimized.
12. devices according to claim 8, is characterized in that,
Further comprise moveable platform, this moveable platform is configured to luminescent device to move to allow the zones of different of luminescent device to be connected in power supply.
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| US201361780294P | 2013-03-13 | 2013-03-13 | |
| US61/780,294 | 2013-03-13 | ||
| US14/204,113 | 2014-03-11 | ||
| US14/204,113 US9551669B2 (en) | 2013-03-13 | 2014-03-11 | Method and system for characterizing light emitting devices |
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| CN104048599B CN104048599B (en) | 2018-06-01 |
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| CN109443234A (en) * | 2018-10-31 | 2019-03-08 | 许之敏 | The synchronous microscope for detecting small micro- light emitting diode three-dimensional appearance and photoelectric properties |
| CN113203714A (en) * | 2020-04-30 | 2021-08-03 | 台湾积体电路制造股份有限公司 | System and method for detecting contamination of a thin film |
| CN114662346A (en) * | 2022-05-24 | 2022-06-24 | 山东大学 | Simulation prediction method for dislocation extension characteristics in semiconductor laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105910794A (en) * | 2015-02-25 | 2016-08-31 | 东友精细化工有限公司 | Apparatus and method for detecting defect of optical film |
| CN109443234A (en) * | 2018-10-31 | 2019-03-08 | 许之敏 | The synchronous microscope for detecting small micro- light emitting diode three-dimensional appearance and photoelectric properties |
| CN113203714A (en) * | 2020-04-30 | 2021-08-03 | 台湾积体电路制造股份有限公司 | System and method for detecting contamination of a thin film |
| CN114662346A (en) * | 2022-05-24 | 2022-06-24 | 山东大学 | Simulation prediction method for dislocation extension characteristics in semiconductor laser |
| CN114662346B (en) * | 2022-05-24 | 2022-08-09 | 山东大学 | Simulation prediction method for dislocation extension characteristics in semiconductor laser |
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