CN104009125A - 多晶硅片的制绒工艺 - Google Patents

多晶硅片的制绒工艺 Download PDF

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CN104009125A
CN104009125A CN201410267478.0A CN201410267478A CN104009125A CN 104009125 A CN104009125 A CN 104009125A CN 201410267478 A CN201410267478 A CN 201410267478A CN 104009125 A CN104009125 A CN 104009125A
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邬时伟
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Guilin Sunshine Energy Technology Co.,Ltd.
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0236Special surface textures
    • H01L31/02363Special surface textures of the semiconductor body itself, e.g. textured active layers
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    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract

本发明公开了一种多晶硅片的制绒工艺,包括以下步骤:(1)在硅片表面喷涂一层碳化硅颗粒;(2)在含有硝酸和氢氟酸的混合液中进行酸制绒;(3)在氢氧化钾溶液中进行碱制绒;(4)在含有盐酸和氢氟酸的混合液中进行酸洗;(5)清洗并烘干。通过本工艺生产出来的太阳能电池片反射率低,多晶硅太阳能电池片的电池转换效率高。

Description

多晶硅片的制绒工艺
技术领域
本发明涉及太阳能电池的制作领域,尤其是涉及一种多晶硅片的制绒工艺。
背景技术
近年来,多晶硅太阳能电池以其转换效率较高、性能稳定和成本适中的特点而得到越来越广泛的应用,其产量已超越单晶硅,占据了市场的主导地位。
为了提高太阳能电池的电池转换效率,在制作时,需要先对硅片进行化学处理,使得硅表面做成一个具有一定形状的绒面,但是,依照现有技术,在对多晶硅太阳能电池片进行制绒后,所得硅片反射率偏高,且绒面的均匀性较差,多晶硅太阳能电池片的电池转换效率低。
发明内容
本发明为了克服上述的不足,提供了一种反射率较低,电池转换效率高的多晶硅片的制绒工艺。
本发明的技术方案如下:
一种多晶硅片的制绒工艺,包括以下步骤:
(1)在硅片表面喷涂一层碳化硅颗粒;
(2)在含有硝酸和氢氟酸的混合液中进行酸制绒;
(3)在氢氧化钾溶液中进行碱制绒;
(4)在含有盐酸和氢氟酸的混合液中进行酸洗;
(5)清洗并烘干。
步骤(1)中碳化硅颗粒的粒径在1-10μm之间。
步骤(2)混合液中硝酸的质量分数为35%,氢氟酸的质量分数为7%,硅片在15℃下制绒1.5min。
步骤(3)中氢氧化钾的质量分数为8%,硅片在35℃下制绒2min。
步骤(4)混合液中盐酸的质量分数为15%,氢氟酸的质量分数为10%,硅片在25℃下酸洗0.5min,以去除氧化层和附着的碱液。
步骤(5)中在清洗之后,在35℃下烘干2.5min。
本发明的有益效果是:
本发明先喷涂碳化硅颗粒作为保护颗粒,再用酸制绒,在多晶硅片表面形成腐蚀坑,而在该过程中,由于有保护颗粒,表面被颗粒覆盖处腐蚀缓慢,降低了硅片的反射率;然后再用碱制绒,在酸腐蚀形成的凹坑中腐蚀出金字塔的形貌,形成更多的光陷阱,改变了硅片表面的形貌结构,进一步降低了多晶硅制绒后的反射率,提高了多晶硅太阳能电池片的电池转换效率。
具体实施方式
现在对本发明作进一步详细的说明。
实施例1
一种多晶硅片的制绒工艺,包括以下步骤:
(1)在硅片表面喷涂一层粒径在1-2μm的碳化硅颗粒作为保护颗粒;
(2)在15℃的条件下,在含有质量分数为35%的硝酸和质量分数为7%的氢氟酸的混合液中酸制绒1.5min;
(3)在35℃的条件下,在质量分数为8%的氢氧化钾溶液中碱制绒2min;
(4)在25℃的条件下,在含有质量分数为15%的盐酸和质量分数为10%的氢氟酸的混合液中酸洗0.5min,以去除氧化层和附着的碱液;
(5)在清水中清洗,并在35℃下烘干2.5min。
通过上述方法生产出来的太阳能电池片反射率为24.8%,电池转换效率为17.51%。
实施例2
(1)在硅片表面喷涂一层粒径在5-6μm的碳化硅颗粒作为保护颗粒;
(2)在15℃的条件下,在含有质量分数为35%的硝酸和质量分数为7%的氢氟酸的混合液中酸制绒1.5min;
(3)在35℃的条件下,在质量分数为8%的氢氧化钾溶液中碱制绒2min;
(4)在25℃的条件下,在含有质量分数为15%的盐酸和质量分数为10%的氢氟酸的混合液中酸洗0.5min,以去除氧化层和附着的碱液;
(5)在清水中清洗,并在35℃下烘干2.5min。
通过上述方法生产出来的太阳能电池片反射率为22.3%,电池转换效率为17.62%。
实施例3
(1)在硅片表面喷涂一层粒径在9-10μm的碳化硅颗粒作为保护颗粒;
(2)在15℃的条件下,在含有质量分数为35%的硝酸和质量分数为7%的氢氟酸的混合液中酸制绒1.5min;
(3)在35℃的条件下,在质量分数为8%的氢氧化钾溶液中碱制绒2min;
(4)在25℃的条件下,在含有质量分数为15%的盐酸和质量分数为10%的氢氟酸的混合液中酸洗0.5min,以去除氧化层和附着的碱液;
(5)在清水中清洗,并在35℃下烘干2.5min。
通过上述方法生产出来的太阳能电池片反射率为23.1%,电池转换效率为17.55%。
对比例
传统的多晶硅制绒工艺如下:
将多晶硅片在温度为4-10℃的氢氟酸和硝酸的混液中制绒1-2min,其中氢氟酸和硝酸的质量分数分别为6-8%和35-40%。用该方法生产出来的太阳能电池片反射率在27%以上。
上述依据本发明为启示,通过上述的说明内容,相关技术人员完全可以在不偏离本项发明技术思想的范围内,进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容,必须要根据权利要求范围来确定其技术性范围。

Claims (6)

1.一种多晶硅片的制绒工艺,其特征在于,包括以下步骤:
(1)在硅片表面喷涂一层碳化硅颗粒;
(2)在含有硝酸和氢氟酸的混合液中进行酸制绒;
(3)在氢氧化钾溶液中进行碱制绒;
(4)在含有盐酸和氢氟酸的混合液中进行酸洗;
(5)清洗并烘干。
2.根据权利要求1所述的多晶硅片的制绒工艺,其特征在于,步骤(1)中碳化硅颗粒的粒径在1-10μm之间。
3.根据权利要求1所述的多晶硅片的制绒工艺,其特征在于,步骤(2)混合液中硝酸的质量分数为35%,氢氟酸的质量分数为7%,硅片在15℃下制绒1.5min。
4.根据权利要求1所述的多晶硅片的制绒工艺,其特征在于,步骤(3)中氢氧化钾的质量分数为8%,硅片在35℃下制绒2min。
5.根据权利要求1所述的多晶硅片的制绒工艺,其特征在于,步骤(4)混合液中盐酸的质量分数为15%,氢氟酸的质量分数为10%,硅片在25℃下酸洗0.5min。
6.根据权利要求1所述的多晶硅片的制绒工艺,其特征在于,步骤(5)中在清洗之后,在35℃下烘干2.5min。
CN201410267478.0A 2014-06-08 2014-06-08 多晶硅片的制绒工艺 Expired - Fee Related CN104009125B (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241449A (zh) * 2014-09-18 2014-12-24 百力达太阳能股份有限公司 一种多晶硅太阳能电池制造工艺
CN106012027A (zh) * 2016-07-05 2016-10-12 常州大学 一种单多晶硅链式酸碱一体制绒及其制备方法
CN106328734A (zh) * 2016-08-31 2017-01-11 东方日升新能源股份有限公司 太阳能电池硅片的制绒方法
CN107393818A (zh) * 2017-06-27 2017-11-24 江苏大学 一种多晶硅太阳能电池的酸碱二次制绒方法及其多晶硅
CN110752273A (zh) * 2019-10-30 2020-02-04 无锡尚德太阳能电力有限公司 应用在多晶硅片上简化的背面钝化电池工艺

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111524985A (zh) * 2020-04-28 2020-08-11 中国科学院电工研究所 一种多晶硅片表面制绒的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090277501A1 (en) * 2008-05-08 2009-11-12 Marvin Keshner Solar Panel Having Improved Light-Trapping Characteristics and Method
CN101613884A (zh) * 2009-04-02 2009-12-30 常州天合光能有限公司 多晶硅酸法制绒工艺
CN103151423A (zh) * 2013-02-28 2013-06-12 常州捷佳创精密机械有限公司 一种多晶硅片制绒清洗工艺方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090277501A1 (en) * 2008-05-08 2009-11-12 Marvin Keshner Solar Panel Having Improved Light-Trapping Characteristics and Method
CN101613884A (zh) * 2009-04-02 2009-12-30 常州天合光能有限公司 多晶硅酸法制绒工艺
CN103151423A (zh) * 2013-02-28 2013-06-12 常州捷佳创精密机械有限公司 一种多晶硅片制绒清洗工艺方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241449A (zh) * 2014-09-18 2014-12-24 百力达太阳能股份有限公司 一种多晶硅太阳能电池制造工艺
CN106012027A (zh) * 2016-07-05 2016-10-12 常州大学 一种单多晶硅链式酸碱一体制绒及其制备方法
CN106328734A (zh) * 2016-08-31 2017-01-11 东方日升新能源股份有限公司 太阳能电池硅片的制绒方法
CN107393818A (zh) * 2017-06-27 2017-11-24 江苏大学 一种多晶硅太阳能电池的酸碱二次制绒方法及其多晶硅
CN107393818B (zh) * 2017-06-27 2020-06-09 江苏大学 一种多晶硅太阳能电池的酸碱二次制绒方法及其多晶硅
CN110752273A (zh) * 2019-10-30 2020-02-04 无锡尚德太阳能电力有限公司 应用在多晶硅片上简化的背面钝化电池工艺
CN110752273B (zh) * 2019-10-30 2022-07-01 无锡尚德太阳能电力有限公司 应用在多晶硅片上简化的背面钝化电池工艺

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