Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telstar recipient and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric property should be met: (1) seriation DIELECTRIC CONSTANT ε
rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ to reduce noise, General Requirements Qf>=3000GHz; (3) the temperature coefficient τ of resonance frequency
?as far as possible close to zero to ensure the thermal stability that device has had, General Requirements-10/ DEG C≤τ
?≤+10ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world.
According to relative dielectric constant ε
rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al
2o
3-TiO
2, Y
2baCuO
5, MgAl
2o
4and Mg
2siO
4deng, its ε
r≤ 20, quality factor q × f>=50000GHz, τ
?≤ 10ppm/ ° of C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε
rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta
2o
5, BaO-ZnO-Ta
2o
5or BaO-MgO-Nb
2o
5, BaO-ZnO-Nb
2o
5system or the hybrid system MWDC material between them.Its ε
r=25 ~ 30, Q=(1 ~ 2) × 10
4(under f>=10GHz), τ
?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz as dielectric resonance device.
(3) medium ε
rwith the microwave dielectric ceramic of Q value, mainly with BaTi
4o
9, Ba
2ti
9o
20(Zr, Sn) TiO
4deng the MWDC material for base, its ε
r=35 ~ 40, Q=(6 ~ 9) × 10
3(under f=3 ~-4GHz), τ
?≤ 5ppm/ ° of C.Be mainly used in microwave military radar in 4 ~ 8GHz frequency range and communication system as dielectric resonance device.
(4) high ε
rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz frequency range, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln
2o
3-TiO
2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li
2o-Ln
2o
3-TiO
2series, lead base series material, Ca
1-xln
2x/3tiO
3be contour ε
rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2o
3-TiO
2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3dielectric constant reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low-melting-point metal such as Ag and Cu burn formation multilayer ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperatureCo-firedCeramics, the requirement of development LTCC) and the development of microwave multilayer device, researcher both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low-melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstates architecture compound and tellurate architecture compound get the attention and research, but the subject matter existed is, the temperature coefficient of resonance frequency of the single-phase microwave dielectric ceramic material of low temperature sintering of most open report is all bigger than normal, cannot ensure the thermal stability that device has had; And also cannot carry out by existing theory or technology the τ predicting monophase materials up to now
?value, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.
We are to consisting of Li
2w
2zn
3o
10noval chemical compound carried out sintering characteristic and Study on microwave dielectric property, found that such pottery have excellent comprehensive microwave dielectric property simultaneously sintering temperature lower than 700
°c, what can realize with Ag is low temperature co-fired, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and filter, can meet the needs of low temperature co-fired technology and microwave multilayer device.
Summary of the invention
The object of this invention is to provide a kind of Heat stability is good and low-loss, and can low sintering microwave dielectric ceramic material and preparation method thereof.
The chemical constitution formula of microwave dielectric ceramic material of the present invention is Li
2w
2zn
3o
10.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be the Li of more than 99.9% by purity
2cO
3, WO
3li is pressed with the starting powder of ZnO
2w
2zn
3o
10chemical formula weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 620 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, more compressing, finally in 670 ~ 700 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the poly-vinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder gross mass.
Of the present invention
advantageous Effectsbe: the ceramic sintering temperature of application claims protection is low, can meet the technology needs of low temperature co-fired technology and microwave multilayer device; The temperature coefficient τ of its resonance frequency
?close to zero, the heat-staple requirement of device can be met; Dielectric constant reaches 21 ~ 22, and quality factor q f value, up to 74000-97000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and filter, industrially have great using value.