CN104003721B - Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof - Google Patents

Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof Download PDF

Info

Publication number
CN104003721B
CN104003721B CN201410207782.6A CN201410207782A CN104003721B CN 104003721 B CN104003721 B CN 104003721B CN 201410207782 A CN201410207782 A CN 201410207782A CN 104003721 B CN104003721 B CN 104003721B
Authority
CN
China
Prior art keywords
hours
dielectric ceramic
microwave dielectric
powder
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410207782.6A
Other languages
Chinese (zh)
Other versions
CN104003721A (en
Inventor
陈进武
方亮
唐莹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Xingqiang Chemical Industry Technology Research Institute Co., Ltd
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN201410207782.6A priority Critical patent/CN104003721B/en
Publication of CN104003721A publication Critical patent/CN104003721A/en
Application granted granted Critical
Publication of CN104003721B publication Critical patent/CN104003721B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention discloses a kind of low temperature sintering temperature-stable microwave dielectric ceramic Li 2w 2zn 3o 10, its preparation method concrete steps are: purity is the Li of more than 99.9% by (1) 2cO 3, WO 3li is pressed with the starting powder of ZnO 2w 2zn 3o 10chemical formula weigh batching; (2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 620 DEG C of air atmosphere after oven dry; (3) in the powder that step (2) is obtained, binding agent is added and after granulation, more compressing, finally in 670 ~ 700 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the poly-vinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder gross mass.Ceramic sintering temperature prepared by the present invention is low, and its temperature coefficient of resonance frequency is little, and temperature stability is good, and dielectric constant reaches 21 ~ 22, and quality factor q f value, up to 74000-97000GHz, industrially has great using value.

Description

Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to the microwave devices such as medium substrate, resonator and the filter used in microwave frequency, and the dielectric ceramic material of ceramic capacitor or temperature compensating capacitor and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telstar recipient and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric property should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ to reduce noise, General Requirements Qf>=3000GHz; (3) the temperature coefficient τ of resonance frequency ?as far as possible close to zero to ensure the thermal stability that device has had, General Requirements-10/ DEG C≤τ ?≤+10ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world.
According to relative dielectric constant ε rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10ppm/ ° of C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the hybrid system MWDC material between them.Its ε r=25 ~ 30, Q=(1 ~ 2) × 10 4(under f>=10GHz), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 40, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5ppm/ ° of C.Be mainly used in microwave military radar in 4 ~ 8GHz frequency range and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz frequency range, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3dielectric constant reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low-melting-point metal such as Ag and Cu burn formation multilayer ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperatureCo-firedCeramics, the requirement of development LTCC) and the development of microwave multilayer device, researcher both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low-melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstates architecture compound and tellurate architecture compound get the attention and research, but the subject matter existed is, the temperature coefficient of resonance frequency of the single-phase microwave dielectric ceramic material of low temperature sintering of most open report is all bigger than normal, cannot ensure the thermal stability that device has had; And also cannot carry out by existing theory or technology the τ predicting monophase materials up to now ?value, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.
We are to consisting of Li 2w 2zn 3o 10noval chemical compound carried out sintering characteristic and Study on microwave dielectric property, found that such pottery have excellent comprehensive microwave dielectric property simultaneously sintering temperature lower than 700 °c, what can realize with Ag is low temperature co-fired, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and filter, can meet the needs of low temperature co-fired technology and microwave multilayer device.
Summary of the invention
The object of this invention is to provide a kind of Heat stability is good and low-loss, and can low sintering microwave dielectric ceramic material and preparation method thereof.
The chemical constitution formula of microwave dielectric ceramic material of the present invention is Li 2w 2zn 3o 10.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be the Li of more than 99.9% by purity 2cO 3, WO 3li is pressed with the starting powder of ZnO 2w 2zn 3o 10chemical formula weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 620 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, more compressing, finally in 670 ~ 700 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the poly-vinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder gross mass.
Of the present invention advantageous Effectsbe: the ceramic sintering temperature of application claims protection is low, can meet the technology needs of low temperature co-fired technology and microwave multilayer device; The temperature coefficient τ of its resonance frequency ?close to zero, the heat-staple requirement of device can be met; Dielectric constant reaches 21 ~ 22, and quality factor q f value, up to 74000-97000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and filter, industrially have great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.Just Li 2w 2zn 3o 10powder mixes with the Ag powder accounting for powder quality 20%, compressing after, at 700 DEG C sinter 4 hours;
X-ray diffraction material phase analysis and scanning electron microscopic observation all show Li 2w 2zn 3o 10chemical reaction is not there is not, i.e. Li with Ag 2w 2zn 3o 10can be low temperature co-fired with Ag electrode.This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and filter, can meet the technology needs of the system such as mobile communication and satellite communication.
Table 1:

Claims (1)

1. a low temperature sintering microwave dielectric ceramic, is characterized in that the chemical constitution formula of described microwave dielectric ceramic is: Li 2w 2zn 3o 10;
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be the Li of more than 99.9% by purity 2cO 3, WO 3li is pressed with the starting powder of ZnO 2w 2zn 3o 10chemical formula weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 620 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, more compressing, finally in 670 ~ 700 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the poly-vinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder gross mass.
CN201410207782.6A 2014-05-17 2014-05-17 Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof Active CN104003721B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410207782.6A CN104003721B (en) 2014-05-17 2014-05-17 Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410207782.6A CN104003721B (en) 2014-05-17 2014-05-17 Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof

Publications (2)

Publication Number Publication Date
CN104003721A CN104003721A (en) 2014-08-27
CN104003721B true CN104003721B (en) 2016-01-13

Family

ID=51364661

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410207782.6A Active CN104003721B (en) 2014-05-17 2014-05-17 Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof

Country Status (1)

Country Link
CN (1) CN104003721B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104230340B (en) * 2014-09-21 2016-03-02 桂林理工大学 Low temperature sintering dielectric constant microwave ceramic medium Ba 5znW 3o 15
CN104311008B (en) * 2014-10-01 2016-04-06 桂林理工大学 Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic BaNb 4v 2o 16and preparation method thereof
CN104311028B (en) * 2014-10-22 2016-03-02 桂林理工大学 Ultralow dielectric microwave dielectric ceramic Li 3ndWO 6and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101798220A (en) * 2010-03-24 2010-08-11 桂林理工大学 Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN103121843A (en) * 2013-03-25 2013-05-29 桂林理工大学 Microwave dielectric ceramic Li2Mg2W3O12 capable of being sintered at low temperature and preparation method thereof
CN103159477A (en) * 2013-04-02 2013-06-19 桂林理工大学 Low-temperature sintered tungstate microwave dielectric ceramic Li2MW2O8 and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101798220A (en) * 2010-03-24 2010-08-11 桂林理工大学 Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof
CN103121843A (en) * 2013-03-25 2013-05-29 桂林理工大学 Microwave dielectric ceramic Li2Mg2W3O12 capable of being sintered at low temperature and preparation method thereof
CN103159477A (en) * 2013-04-02 2013-06-19 桂林理工大学 Low-temperature sintered tungstate microwave dielectric ceramic Li2MW2O8 and preparation method thereof

Also Published As

Publication number Publication date
CN104003721A (en) 2014-08-27

Similar Documents

Publication Publication Date Title
CN104211397B (en) Temperature-stable ultralow dielectric microwave dielectric ceramic Nb 2vY 3o 12
CN104003722B (en) Low temperature sintering ultralow dielectric microwave dielectric ceramic Li 3alV 2o 8and preparation method thereof
CN104058748B (en) Can low-temperature sintered microwave dielectric ceramic LiMg 2v 3o 10and preparation method thereof
CN104211391B (en) Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic Bi 3la 5ti 7o 26
CN104003720B (en) Can low-temperature sintered microwave dielectric ceramic Li 2zn 2w 2o 9and preparation method thereof
CN104003723B (en) Low temperature sintering microwave dielectric ceramic Li 3zn 4nbO 8and preparation method thereof
CN103342558B (en) Low temperature sintering microwave dielectric ceramic Ba 3ti 2v 4o 17and preparation method thereof
CN104058745B (en) Can low-temperature sintered microwave dielectric ceramic Li 2mgNb 2o 7and preparation method thereof
CN103319176B (en) Microwave dielectric ceramic BaCu2V2O8 with low temperature sintering function and preparation method thereof
CN103553612B (en) Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof
CN104045344B (en) Can low-temperature sintered microwave dielectric ceramic Li 2zn 3wO 7and preparation method thereof
CN104058747B (en) Can low-temperature sintered microwave dielectric ceramic LiMgV 3o 9and preparation method thereof
CN103539449B (en) Low temperature sintering microwave dielectric ceramic BiNbW 2o 10and preparation method thereof
CN103332932B (en) Low-temperature sintered vanadate microwave dielectric ceramic BaZnV2O7 and preparation method thereof
CN104003721B (en) Low temperature sintering microwave dielectric ceramic Li 2w 2zn 3o 10and preparation method thereof
CN103319177B (en) Microwave dielectric ceramic Ba3WTiO8 with low-temperature sintering characteristic and preparation method thereof
CN103496969B (en) Low-temperature sintering temperature-stable microwave dielectric ceramic Bi14WO24 and preparation method thereof
CN103130505B (en) Low-temperature sinterable lithium-based microwave dielectric ceramic Li2W2O7 and preparation method thereof
CN105198403A (en) Ultralow-dielectric-constant microwave dielectric ceramic Li3ZnBi5O11 and preparation method thereof
CN104003719B (en) Low temperature sintering microwave dielectric ceramic LiTi 2v 3o 12and preparation method thereof
CN104370544B (en) Low temperature sintering temperature-stable ultralow dielectric microwave dielectric ceramic
CN103467091B (en) Low-sintering microwave dielectric ceramic Ba4Nb2V2O14 and preparation method of microwave dielectric ceramic
CN105503174A (en) Temperature-stable low-dielectric-constant microwave dielectric ceramic Bi2LaNbTiO9 and preparation method thereof
CN103964848B (en) The microwave dielectric ceramic Li of sintered at ultra low temperature 2pVO 6and preparation method thereof
CN103896573B (en) Low temperature sintering temperature-stable microwave dielectric ceramic LiPO 3and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20201201

Address after: No.32, group 2, Yongxing Village, yong'anzhou Town, Gaogang District, Taizhou City, Jiangsu Province

Patentee after: Chen Cheng

Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12

Patentee before: GUILIN University OF TECHNOLOGY

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20201230

Address after: No.25-1, Gangcheng Road, dongyinggang Economic Development Zone, Hekou District, Dongying City, Shandong Province

Patentee after: Shandong Xingqiang Chemical Industry Technology Research Institute Co., Ltd

Address before: No.32, group 2, Yongxing Village, yong'anzhou Town, Gaogang District, Taizhou City, Jiangsu Province

Patentee before: Chen Cheng

TR01 Transfer of patent right