CN103985687B - Silver alloy solder wire for semiconductor package - Google Patents
Silver alloy solder wire for semiconductor package Download PDFInfo
- Publication number
- CN103985687B CN103985687B CN201410040467.9A CN201410040467A CN103985687B CN 103985687 B CN103985687 B CN 103985687B CN 201410040467 A CN201410040467 A CN 201410040467A CN 103985687 B CN103985687 B CN 103985687B
- Authority
- CN
- China
- Prior art keywords
- silver alloy
- additive
- welding lead
- percentage
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 229910000679 solder Inorganic materials 0.000 title abstract description 4
- 238000003466 welding Methods 0.000 claims abstract description 53
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000654 additive Substances 0.000 claims abstract description 38
- 230000000996 additive effect Effects 0.000 claims abstract description 38
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052718 tin Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000011265 semifinished product Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000012536 packaging technology Methods 0.000 description 5
- 238000004382 potting Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000010998 test method Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Conductive Materials (AREA)
Abstract
A silver alloy solder wire for semiconductor packaging comprises a silver alloy component including silver, palladium, and a first additive, wherein the weight percentage of palladium is greater than 0 and not greater than 2wt% based on 100wt% of the weight percentage of the silver alloy component, the weight percentage of the first additive is not less than 0.001wt% and not greater than 2wt%, and the first additive is selected from indium, tin, scandium, bismuth, antimony, manganese, zinc, and a combination thereof. According to the invention, through the palladium and the first additive in a preset proportion, the stability of an arc formed by the silver alloy welding wire after wire bonding is effectively improved, and the arc is not easy to topple.
Description
Technical field
The present invention relates to a kind of welding lead, more particularly to a kind of silver alloy welding lead for semiconductor packages.
Background technology
In technical field of semiconductor encapsulation, packaging technology mainly by way of welding, by a welding lead (or
Lead) to electrically connect the pad of semiconductor chip (or IC chip) (pad), and the conducting wire of printed circuit board (PCB) (PCB), and
Into a packaging semi-finished product；Then, the packaging semi-finished product is arranged to an accommodation space of an enclosed seat, then filled out in the accommodation space
A potting resin is filled, and the potting resin is coated the packaging semi-finished product so that the packaging semi-finished product is isolated from the outside, into one
Packaging part.
Because the conductance of golden (Au) is high and good stability, be not easy with other kinds of metal reaction, so conventional weldering
It is typically based on gold thread to connect wire.However, well known, gold is the metal to worth a jew's eye, and printing is welded in when required
The semiconductor chip quantity of circuit board is big or when required welding lead circuit is more, will cause the with high costs of overall package part.
Accordingly, the researcher of art transfers relatively low welding lead for development cost gold relatively to, because
The conductance of silver is high, and as the main material of the golden welding lead of replacement.TaiWan, China patent publication the 201001652nd is just
A kind of silver alloy wire is disclosed, mainly 0.05~5wt.% platinum, rhodium, osmium, gold, palladium is made an addition to high humidity environment is improved in silver
Under reliability, suppress the solder side between argentiferous alloy lead wire and semiconductor chip connection pad and form oxide-film and galvanic corrosion occurs, with
Prevent solder side from die crack occurs and improve weld strength, and further add the improvement such as calcium, barium welding containing silver alloy and lead
The workability and tensile strength of line.
However, continue, with Moore ＇ s law micro sizes, relatively, to be welded in half in technology of semiconductor chips field
The footpath of the welding lead of the pad of conductor chip is wide also smaller.Inventor find, although silver alloy wire occur, reduce wire rod into
This and solve the problems, such as silver wire plasticity difference；However, wire diameter width must it is less and less in the case of, how to control conjunction
Gold element and content make silver alloy welding lead be not easy to topple over after filling potting resin after wire bonding or wire bonding and tieed up
The problem of holding loop height stability (namely arc stability), and then avoiding short circuit, it is important and urgently solve to turn into one
Problem certainly.
The content of the invention
The silver alloy welding lead for semiconductor packages of the present invention, includes a silver alloy component, the silver alloy component
Including silver, palladium, and one first additive, the percentage by weight based on the silver alloy component is in terms of 100wt%, the weight percent of palladium
Than more than 0 and being not more than 2wt%, the percentage by weight of first additive is not less than 0.001wt%, and is not more than 2wt%, and this
One additive is selected from indium, tin, scandium, bismuth, calcium halophosphate activated by antimony andmanganese, zinc, and wherein one combination.
The silver alloy welding lead for semiconductor packages of the present invention, the silver alloy component also include one second addition
Agent, in terms of 100wt%, the percentage by weight of the Second addition is not less than the percentage by weight based on the silver alloy component
0.001wt%, no more than 2wt%, and the Second addition is selected from copper, nickel, cobalt, niobium, titanium, vanadium, and wherein one combination.
The silver alloy welding lead for semiconductor packages of the present invention, the weight of first additive and the Second addition
Amount percentage summation is not more than 2wt%.
The silver alloy welding lead for semiconductor packages of the present invention, first additive are selected from indium, tin, zinc, and its
In one combination.
The silver alloy welding lead for semiconductor packages of the present invention, the Second addition are selected from copper, nickel, and its group
Close.
The beneficial effects of the present invention are：The palladium of the silver alloy component of silver alloy welding lead, first additive, and should
When Second addition has specific percentage by weight, the tensile strength of the silver alloy wire can be made, stretch line outage, and weldering
Loop height stability after conjunction is splendid, and is well suited for the packaging technology of the semiconductor chip of very small dimensions.
Brief description of the drawings
Nothing
Embodiment
About of the invention foregoing and other technology contents, feature and effect, in following two preferred embodiments specifically
In bright, can clearly it present.
The present invention be used for semiconductor packages silver alloy welding lead purposes be in packaging technology in a welding manner
A pad of semiconductor chip and the conducting wire of a circuit board are electrically connected, into a packaging semi-finished product (not shown).It is more detailed
Carefully say, in technical field of semiconductor encapsulation, the mode of welding is based on wire bonding.And by the envelope after wire bonding
Dress semi-finished product are arranged in an accommodation space of an enclosed seat, are refilled a potting resin, into a packaging part, and are completed to encapsulate
The key step of technique.
One first preferred embodiment that the present invention is used for the silver alloy welding lead of semiconductor packages includes a silver alloy group
Part, the silver alloy component includes silver, palladium, and one first additive, and first additive is selected from indium, tin, scandium, antimony, bismuth, manganese, zinc,
And wherein one combination.In terms of 100wt%, the percentage by weight of palladium is more than 0 and is not more than percentage by weight by the silver alloy component
2wt%, the percentage by weight of first additive is not less than 0.001wt%, and is not more than 2wt%.It is it should be noted that preferable at this
In embodiment, in addition to the palladium and first additive of the silver alloy component, remaining content for silver, and not using only containing silver as
Limit, if the other kinds of physical property of the silver alloy welding lead need to be promoted, such as conductance, it also can optionally add predetermined ratio
Suitable element.
The addition of wherein first additive is few, and learns the first additive and silver-colored solid solubility height, easy shape by phasor
Into solution strengthening, and first additive is also equipped with the oxidation resistant characteristic of Assisted Ag so that silver alloy welding lead of the present invention leads to
Cross the first additive of the predetermined ratio and improve toughness and loop height stability, and then make wire bonding in the semiconductor core
The pad of piece and the arc that the silver alloy welding lead after the wire circuit of the printed circuit board (PCB) is formed are stable, solve afterwards
The problem of potting resin is easily toppled over is filled in packaging technology.
When the percentage by weight of first additive is higher than 2wt%, although the loop height that can be improved after wire bonding is steady
Qualitative (namely arc stability), is but easily caused that to stretch line outage too high；When the percentage by weight of first additive is less than
During 0.001wt%, the content easily due to first additive in the silver alloy welding lead is too low and can not improve welding lead
Toughness and wire bonding after loop height stability.
It is first preferably real with this that the present invention is used for one second preferred embodiment of the silver alloy welding lead of semiconductor packages
It is similar to apply example, its difference is in also includes a Second addition in the silver alloy component, the Second addition be selected from copper, nickel, cobalt,
Niobium, titanium, vanadium, and wherein one combination.Percentage by weight based on the silver alloy component is counted for 100wt%, and the percentage by weight of palladium is big
In 0 and being not more than 2wt%, the percentage by weight of first additive is not less than 0.001wt%, and is not more than 2wt%, and this second adds
Add the percentage by weight of agent to be not less than 0.001wt%, and be not more than 2wt%.
The atomic size of the Second addition is less than the atomic size of silver, and is difficult to form displaced type solid solution；Therefore, should
The gap that Second addition be able to should be inserted between silver atoms forms intermittence solid solution, and then produces gap and strengthen and be dissolved with silver, both
And the tensile strength of the silver alloy wire is lifted, while lift loop height stability after welding.However, work as the Second addition
Percentage by weight when being more than 2wt%, though the tensile strength for improving silver alloy wire can not shape when can cause lead key closing process
Into the welding lead of the arc of stable and high camber dispersion ratio；When the percentage by weight of the Second addition is less than 0.001wt%
When, because its content is too low, and it can not effectively lift tensile strength.
It is preferred that the percentage by weight summation of first additive and the Second addition is not more than 2wt%.
More preferably, first additive is selected from indium, tin, zinc, and wherein one combination, and the Second addition is selected from copper, nickel, and
It is combined.
It should be noted that current raw metal is mainly made through refining, so being just fine silver, with carrying now
Refining technology, contain the micro trace impurity that can not be separated with being still difficult to avoid that, so silver-colored purity referred to herein is
More than 99.99%, and ignore trace impurity therein；In addition, palladium, first additive, and the purity of the Second addition is also
More than 99.99%.
<Concrete example and its test result>
Table 1 below is used in the concrete example 1~14 and comparative example 1~6 of the silver alloy welding lead of semiconductor packages for the present invention
Component ratio and the test event that is carried out.Wherein, concrete example 1~5 hereby belongs to first preferred embodiment, concrete example 6~14
Hereby belong to second preferred embodiment, and carry out stretching line outage, tensile strength, and the test of loop height stability.
The preparation method of concrete example and comparative example be mainly first with purity more than 99.99% silver, palladium, and the first additive,
Second addition is raw material.
First, the weight percent of each raw material listed by table 1 is first prepared；Then, it is cast into footpath a width of 8~
10mm silver alloy bus；Continue, then continuous and rough Wiring technology for several times and middle bracing wire technique imposed to the silver alloy bus,
So that the footpath area of the silver alloy bus reduces 97% compared with the silver alloy bus before bracing wire technique.
Then, annealing heat-treats are carried out to the silver alloy bus, then the silver alloy bus after the annealing is imposed it is continuous and
Thin bracing wire technique and ultra-fine bracing wire technique for several times forms a silver alloy welding lead；Finally, then to the silver alloy welding lead
Annealing heat-treats are carried out, and turn into silver alloy welding lead of the present invention.Wherein, to silver alloy bus or silver after bracing wire technique
It is due to rough Wiring technology, middle bracing wire technique, thin bracing wire technique and ultra-fine that alloy welding lead, which carries out the reason for annealing heat-treats,
Bracing wire technique belongs to continuous processing technology, when a silver alloy wire rod is after constantly deforming and being pullled, will gather in wire internal
The substantial amounts of stress of product, and the bus pullled also hardens because dislocation (dislocation) is formed, at heat of annealing
Reason rearranges for the atom of silver alloy wire rod, and discharges stress, softens the silver alloy welding lead afterwards.
Illustrate the method for testing of concrete example and comparative example below.It mainly shows silver-alloy brazing of the present invention with tensile strength
The engineering properties of wire is connect, the quality of silver alloy welding lead of the present invention is shown to stretch line outage and loop height stability.
[method of testing of tensile strength]
Prepare the welding lead to be measured that length is 10cm, by the welding lead to be measured with 0.1~1 centimetre per minute of speed
Rate is pulled down to broken string in atmospheric environment, and uses the tensile strength of the JIS Z2201 standard testing criterions welding lead.
[method of testing for stretching line outage]
Measure broken string frequency of the silver alloy bus of annealed heat treatment in thin bracing wire technique.The silver alloy is female
Line carries out thin bracing wire technique and the fine rule length is pulled to more than 5000m, and measures the number that broken string occurs.
In table 1, broken string is represented 0 time with " ◎ "；Broken string is represented 1 time with "○"；Broken string is represented 2~3 times with " △ "；With
"×" represents that broken string is not less than 4 times；Wherein, break 0 time and represent that outage is extremely low；1 expression outage of broken string is relatively low；Broken string 2
~3 times expression outage is O-level；Broken string represents that outage is high not less than 4 times.
[method of testing of loop height stability]
The silver alloy welding lead is welded on a pad and forms a bonding wire, is repeatedly formed 100 bonding wires altogether, and maintain
The camber of each bonding wire is 100 μm.Especially, in this method of testing, the camber for being the unified bonding wire is 100 μm, certainly,
Also the bonding wire that 100 camber are 200 μm, or the bonding wire test loop that camber usual in art is formed can be passed through
High stability.
Then, using label as OLYMPUS, model BX51M light microscope (OpticalMicroscope, abbreviation
OM the appearance difference of the bonding wire) is detected.
In table 1, the bonding wire that 0 appearance differs greatly is indicated with " ◎ "；Indicate that 1 appearance differs greatly with "○"
Bonding wire；The bonding wire that 2 appearance differ greatly is indicated with " △ "；Indicate what not less than 3 appearance differed greatly with "×"
Bonding wire；Wherein, the bonding wire for having 0 appearance to differ greatly represents that loop height stability is splendid；There is the weldering that 1 appearance differs greatly
Line represents that loop height stability is preferable；The bonding wire for having 2 appearance to differ greatly represents that loop height stability is common；Have not small
Loop height stability extreme difference is represented in the bonding wire that 3 appearance differ greatly.
Table 1
By the concrete example 1~6 of table 1, it will be seen that, when the percentage by weight of palladium is more than 0 and is not more than 2wt%, this first adds
When adding the percentage by weight of agent not less than 0.001wt% and being not more than 2wt%, its tensile strength is all more than 17g, and stretches line outage
And loop height stability also has common extremely splendid degree；Comparative example 4 is reviewed, when without first additive, its
Stretch line outage, tensile strength and loop height stability and all do not reach preferable degree；Referring again to comparative example 2~3, when palladium
Percentage by weight is more than 2wt%, or during without palladium, even if the first additive with 1wt%, its tensile strength also less than 16g, and
Its loop height stability extreme difference；Referring again to comparative example 5~6, when the percentage by weight of first additive is more than 2wt%, just
Calculator has 1.5wt% palladium, and its tensile strength stretches the degree that line outage is difference less than 15g.
Secondly, by concrete example 6~14 it will be seen that, when silver alloy welding lead of the present invention also includes the Second addition,
The percentage by weight of the Second addition is not less than 0.001wt%, and when being not more than 2wt%, can lift loop height stability and arrive
Degree up to " preferable " to " splendid "；By comparative example 6 it is known that when the Second addition is more than 2wt%, instead result in and stretch
Line outage, tensile strength and loop height stability are all bad.
Although the test result of comparative example 1 shows that it still belongs to the scope for being suitable as welding lead, because gold is expensive
Metal material, if containing gold welding lead cost certainly will be significantly increased in welding lead, and one of purpose of the present invention
It is wire component ratio of the research and development substitution containing gold, so 1 use for reference only of comparative example.
Finally, it was found from concrete example 12, when first additive is tin and indium, the Second addition is copper, and this first
When the summation of additive and the Second addition is not more than 2wt%, there is optimal test result, no matter represent in mechanical strength
Or for welding quality, there is more prominent performance.
In summary, the palladium of the silver alloy component of silver alloy welding lead of the invention, first additive, and this second
When additive has specific percentage by weight, the tensile strength of the silver alloy wire can be made, stretch line outage, and after soldering
Loop height stability it is splendid, and the packaging technology of the semiconductor chip of very small dimensions is well suited for, so can reach really
Into the purpose of the present invention.
Only just the specific configuration embodiment of the present invention adds and gives explanation above, without disobey the construction of the present invention with it is spiritual under, it is all
It is skillful in those skilled in the art scholar, still does a variety of change and modification, this all change is still considered as with modification is covered under this case
In row claim.
Claims (5)
- A kind of 1. silver alloy welding lead for semiconductor packages, it is characterised in that：The silver alloy welding lead is without gold, bag Containing a silver alloy component, the silver alloy component includes silver, palladium, and one first additive, the weight hundred based on the silver alloy component Divide than being counted for 100wt%, the percentage by weight of palladium is more than 0 and is not more than 2wt%, and the percentage by weight of first additive is not small In 0.001wt%, and it is not more than 2wt%, first additive is selected from indium, scandium, antimony, bismuth, manganese, zinc, and wherein one combination.
- 2. it is used for the silver alloy welding lead of semiconductor packages according to claim 1, it is characterised in that：The silver alloy component Also include a Second addition, the percentage by weight based on the silver alloy component is counted for 100wt%, the weight of the Second addition Percentage is not less than 0.001wt%, and no more than 2wt%, and the Second addition is selected from copper, nickel, cobalt, niobium, titanium, vanadium, and wherein One combination.
- 3. it is used for the silver alloy welding lead of semiconductor packages according to claim 2, it is characterised in that：First additive It is not more than 2wt% with the percentage by weight summation of the Second addition.
- 4. it is used for the silver alloy welding lead of semiconductor packages according to claim 1, it is characterised in that：First additive For indium, zinc, or its combination.
- 5. it is used for the silver alloy welding lead of semiconductor packages according to claim 2, it is characterised in that：The Second addition Selected from copper, nickel, and combinations thereof.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102104864 | 2013-02-07 | ||
| TW102104864A TWI536396B (en) | 2013-02-07 | 2013-02-07 | Silver alloy soldered wire for semiconductor packages |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103985687A CN103985687A (en) | 2014-08-13 |
| CN103985687B true CN103985687B (en) | 2018-04-06 |
Family
ID=51277600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410040467.9A Active CN103985687B (en) | 2013-02-07 | 2014-01-27 | Silver alloy solder wire for semiconductor package |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103985687B (en) |
| TW (1) | TWI536396B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108062991B (en) * | 2016-11-08 | 2021-01-26 | 光洋应用材料科技股份有限公司 | Silver alloy wire |
| CN108183075B (en) * | 2017-12-27 | 2020-05-19 | 汕头市骏码凯撒有限公司 | Silver alloy bonding wire and manufacturing method thereof |
| CN109763015A (en) * | 2019-03-25 | 2019-05-17 | 杭州辰卓科技有限公司 | A kind of damp type high thermal conductivity silver of resistance to brittle failure bonding line material used for electronic packaging |
| CN113906559A (en) * | 2019-11-22 | 2022-01-07 | 日铁化学材料株式会社 | Ag alloy bonding wire for semiconductor device |
| CN111599783B (en) * | 2020-04-03 | 2022-05-17 | 广东佳博电子科技有限公司 | Silver-platinum bonding wire utilizing silver-platinum coating and preparation process thereof |
| WO2022085365A1 (en) * | 2020-10-20 | 2022-04-28 | 日鉄マイクロメタル株式会社 | Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006132410A1 (en) * | 2005-06-10 | 2009-01-08 | 田中貴金属工業株式会社 | Silver alloy for electrode, wiring and electromagnetic shielding |
| KR101001700B1 (en) * | 2007-03-30 | 2010-12-15 | 엠케이전자 주식회사 | Ag-base alloy for semiconductor package |
| US8101123B2 (en) * | 2009-03-23 | 2012-01-24 | Lee Jun-Der | Composite alloy bonding wire and manufacturing method thereof |
| JP5616165B2 (en) * | 2010-08-24 | 2014-10-29 | タツタ電線株式会社 | Silver bonding wire |
| CN102154574A (en) * | 2010-10-18 | 2011-08-17 | 东莞市正奇电子有限公司 | Alloy wire for connecting semiconductor components |
-
2013
- 2013-02-07 TW TW102104864A patent/TWI536396B/en active
-
2014
- 2014-01-27 CN CN201410040467.9A patent/CN103985687B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103985687A (en) | 2014-08-13 |
| TWI536396B (en) | 2016-06-01 |
| TW201432716A (en) | 2014-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103985687B (en) | Silver alloy solder wire for semiconductor package | |
| CN102437136B (en) | Bonding alloy wire and production technology thereof | |
| CN105803245B (en) | A kind of high-performance bonding alloy wire and preparation method and application | |
| US11996382B2 (en) | Palladium-coated copper bonding wire, manufacturing method of palladium-coated copper bonding wire, semiconductor device using the same, and manufacturing method thereof | |
| CN109003903B (en) | Gold bonding wire and preparation method thereof | |
| JPWO2006035803A1 (en) | Au alloy bonding wire | |
| CN101626005B (en) | Bonding filamentary silver and preparation method thereof | |
| CN102418001A (en) | Bonding gold wire and preparation method thereof | |
| CN108922876B (en) | Gold alloy bonding wire and manufacturing method thereof | |
| CN105063407A (en) | Sliver alloy bonding wire for LED packaging, and manufacturing method thereof | |
| TWI555155B (en) | Silver alloy wire | |
| KR20070115113A (en) | Au-ag based alloy wire for a semiconductor package | |
| KR20200086310A (en) | Precious metal-coated silver wire for ball bonding and manufacturing method thereof, and semiconductor device using precious metal-coated silver wire for ball bonding and manufacturing method thereof | |
| CN111081670A (en) | Low-cost silver-based bonding alloy wire and preparation method and application thereof | |
| JP3579603B2 (en) | Ultrafine wire made of gold alloy for contacting semiconductor components and method of manufacturing the same | |
| WO2012117512A1 (en) | BONDING WIRE OF GOLD (Au) ALLOY | |
| CN108823453A (en) | The low golden billon bonding wire of one kind and its manufacturing method | |
| CN106244844A (en) | A kind of copper cash of quasiconductor and preparation method thereof | |
| CN105671355B (en) | Low-cost alloy bonding wire and preparation method and application thereof | |
| CN110066938A (en) | A kind of wire for microencapsulated | |
| CN110117733A (en) | A kind of electrum bonding wire and its manufacturing method | |
| CN104299954A (en) | Copper wire for semiconductor welding | |
| CN108701622A (en) | Closing line | |
| CN107195608A (en) | A kind of copper microalloy bonding line and preparation method thereof | |
| CN103824833A (en) | Copper alloy wire used for packaging of semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |