CN103962353A - Cavity cleaning method of plasma etching device - Google Patents
Cavity cleaning method of plasma etching device Download PDFInfo
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- CN103962353A CN103962353A CN201410127005.0A CN201410127005A CN103962353A CN 103962353 A CN103962353 A CN 103962353A CN 201410127005 A CN201410127005 A CN 201410127005A CN 103962353 A CN103962353 A CN 103962353A
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- cavity
- reaction
- process gas
- cleaning method
- air admission
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
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- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a cavity cleaning method of a plasma etching device. The plasma etching device comprises a reaction cavity, a gas inlet unit and a gas exhaust unit. The cavity cleaning method includes the steps that first process gas is led into the plasma etching device to wash the gas inlet unit, and at least parts of reaction by-products on the inner wall of the gas inlet unit are peeled off; second process gas is led into the plasma etching device to form plasmas of the second process gas, and the second process gas reacts with the peeled-off reaction by-products and reaction by-products on the inner wall of the reaction cavity so as to clean the inner wall of the reaction cavity; the pressure of the second process gas is increased, so that the plasmas of the second process gas reacts with the unpeeled-off reaction by-products in the gas inlet unit so as to clean the inner wall of the gas inlet unit. The cavity cleaning method can effectively reduce the risk of wafer center agglomeration defects caused due to the fact that residues of the gas inlet unit deposit and fall.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly a kind of cavity cleaning method of plasma etching apparatus.
Background technology
In recent years, along with the development of semiconductor fabrication process, integrated level and performance requirement to element are more and more higher, plasma etching (Plasma Etching Technology), by making etching gas excite the plasma of formation, is just playing a part very important in field of semiconductor manufacture.As a rule, in plasma etching apparatus, plasma is generally that the etching gas of being discharged by the air admission unit that is positioned at reaction chamber top forms through radio-frequency drive, and plasma bombardment is positioned at the wafer on chuck, thereby realizes the etching to wafer.
Fig. 1 illustrates a kind of structural representation of plasma etching apparatus.Plasma processing apparatus comprises reaction cavity 1, and air admission unit 2 is connected with the reacting gas source (not shown) outside reaction cavity, for the reacting gas input reaction cavity that reacting gas source is provided.Reacting gas ionizes for plasma, to realize the etching to wafer under radio frequency source effect.In general, for improving the symmetry of reaction cavity, plasma etching apparatus adopts air feeding in center, and air admission unit 2 is arranged at the center position of reaction cavity upper portion insulating cover plate.Reaction cavity is also connected with external vacuum suction device (not shown), in order to by the reacting gas extraction cavity 1 of using.
But in the time that reaction cavity service time is longer, etch by-products can be attached on cavity inner wall, so in ensuing etching process, these accessory substances that adhere to also can be subject to plasma bombardment and produce the particle polluting wafer on wafer that drops.Therefore,, for improving the stability of etching, before carrying out etching technics, conventionally can clean reaction cavity.When tradition is cleaned reaction cavity, mostly be to carry out under low vacuum pressure environment, but vacuum suction device has stronger exhaust capacity conventionally, cleaning is not also just fully reacted and may be detached reaction cavity by vacuum suction device very soon with accessory substance with the plasma of reacting gas, thereby has reduced cleaning performance; And the air admission unit that is positioned at reaction cavity far-end is more difficult to be cleaned completely because air inlet path is long, cause the residual stack of air admission unit inwall accessory substance, increase the risk that drops and agglomerated defect occurs and cause product yield to reduce in crystal circle center.
Therefore, be necessary existing cavity cleaning method to make further improvements to overcome above-mentioned defect.
Summary of the invention
Main purpose of the present invention is to overcome the defect of prior art, and a kind of method for etching plasma is provided, and can prevent from causing the agglomerated defect of crystal circle center because of air admission unit residue deposition.
For reaching above-mentioned purpose, the invention provides a kind of cavity cleaning method of plasma etching apparatus, described plasma etching apparatus comprises reaction cavity, air admission unit and the unit of bleeding, described cavity cleaning method comprises:
Step 1: pass into the first process gas and rinse described air admission unit, at least part of byproduct of reaction of described air admission unit inwall is peeled off;
Step 2: pass into the second process gas and form the plasma of described the second process gas, the plasma that makes described the second process gas with described in the reaction by-products of the byproduct of reaction that peels off and described reaction cavity inwall to clean the inwall of described reaction cavity; And
Step 3: increase the pressure of described the second process gas, make in the plasma of described the second process gas and described air admission unit unpeeled described reaction by-products to clean the inwall of described air admission unit.
Preferably, described byproduct of reaction is SiO
xcl
y, described the second process gas is NF
3.
Preferably, the gas flow of described the first process gas is greater than the gas flow of described the second process gas.
Preferably, in step 1, passing into the number of times that described the first process gas rinses described air admission unit is more than or equal to 5 times
Preferably, the pressure of described the first process gas is less than the pressure of the second process gas described in step 2, and gas flow is for being more than or equal to 500sccm; The pressure of the second process gas described in step 2 is for being less than or equal to 10mT, and gas flow is for being less than or equal to 50sccm.
Preferably, the pressure of the second process gas described in step 3 is for being more than or equal to 60mT, and gas flow is for being less than or equal to 50sccm.
Preferably, described cavity cleaning method also comprise pass into oxygen and ionized form plasma, to clean the step of the carbonaceous by-products in described reaction cavity.
Preferably, described cavity cleaning method also comprises one deck SiO that grows on described cavity inner wall by chemical vapour deposition (CVD)
xcl
ystep.
Preferably, described air admission unit be arranged at described reaction cavity top and be positioned at wafer to be etched directly over.
Preferably, described in the unit of bleeding be connected with described reaction cavity by control valve, in each step of described cleaning method, the aperture by controlling described control valve is to regulate the air pressure in described reaction cavity.
The beneficial effect of cleaning method of the present invention is by first using low-pressure, high flow capacity gas rinses repeatedly to cavity, peel off most of etch by-products of air admission unit inwall, the plasma that re-uses low discharge fluoro-gas cleans the etch by-products of peeling off and be deposited on cavity inner wall simultaneously, finally utilize the anti-properties of flow of the plasma of low discharge fluoro-gas under elevated pressures to extend the time of staying of plasma in air admission unit, increase the etching reaction to accessory substance in air admission unit inwall, remove the etch by-products at its dead angle, finally reach while reducing wafer etching the accessory substance risk that drops, optimize the object of crystal circle center's agglomerated defect, and cleaning method of the present invention is realized simply with low cost.
Brief description of the drawings
Fig. 1 is the structural representation of prior art applying plasma etching device;
Fig. 2 is the flow chart of the cavity cleaning method of one embodiment of the invention;
Fig. 3 a~3f is the schematic diagram of the cavity cleaning method of one embodiment of the invention.
Detailed description of the invention
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
Fig. 2 has shown the flow chart of the cavity cleaning method of plasma etching apparatus of the present invention, and Fig. 3 a~3f has shown the cavity cleaning method of the plasma etching device that one embodiment of the present invention provides.Should be appreciated that, figure applying plasma etching device is only exemplary, and it can comprise still less or more element, or the arrangement of this element may be from different shown in Fig. 3 a~3f.
As shown in Fig. 3 a~3f, plasma etching apparatus comprises reaction cavity 30, air admission unit 31 and the unit of bleeding.Air admission unit 31 is for by the reaction cavities 30 such as reacting gas input required cavity cleaning.The unit (for example vavuum pump) of bleeding is connected with reaction cavity by control valve, in order to the reacting gas of using in reaction cavity and reaction are generated to gas extraction cavity 30 in cleaning process.The suction performance of the adjustable unit of bleeding of aperture control by control valve, also just can control the air pressure in reaction cavity.In the present embodiment, plasma etching apparatus adopt air feeding in center, air admission unit 31 be arranged at the center position at reaction cavity top and be positioned at wafer to be etched directly over.
Next in connection with Fig. 2 and Fig. 3 a~3f, cleaning method of the present invention is described in detail.
First, carry out step 21: pass into the first process gas and rinse air admission unit, at least part of byproduct of reaction of air admission unit inwall is peeled off.
Please refer to Fig. 3 a, when reaction cavity service time is longer, the inwall of cavity 30 and air admission unit 31 has all adhered to one deck etch by-products 32, and in the present embodiment, etch by-products is chlorine Si oxide SiO
xcl
y.This layer of etch by-products 32 can affect uniformity and the stability of follow-up plasma etch process, the particularly accompanying etch by-products 32 of air admission unit 31 inwalls, cleans and in plasma etch process, drops and probably directly cause wafer defect if be not only difficult to.
Please continue to refer to Fig. 3 b, in order thoroughly to remove the accompanying chlorine silicon oxide layer 32 of air admission unit 31 inwalls, in the present embodiment, first pass into the first process gas with atmospheric flow and rinse air admission unit, now keeping reaction cavity internal gas pressure is low pressure.Concrete, in this step, the flow of the first process gas, for being more than or equal to 500sccm, keeps the valve wide open of the control valve being connected with the unit of bleeding, and makes the air pressure of reaction cavity maintain low vacuum pressure, is preferably and approaches 0mT.Bleeding under unit effect, mass air flow is from the quick undershoot of air admission unit 31, and at least part of byproduct of reaction of air admission unit 31 inwalls can be taken away along with large flow gas.Preferably, the inwall of air admission unit can be rinsed repeatedly, as being at least rinsed 5 times." pass into large flow the first process gas standard-sized sheet control valve valve---stop passing into the first process gas and close control valve valve " this process can repeat repeatedly.Wherein, the first process gas can be any gas that meets actual process demand, and the present invention is not limited it.As known from the above, this step can make the most of chlorine Si oxide 32 that is deposited in air admission unit inwall drop under large flow gas washes away fast, has reduced the pollution sources that cause wafer defect.
Then, carry out step 22, pass into the second process gas and form the plasma of the second process gas, make the plasma of the second process gas and the reaction by-products of the byproduct of reaction peeling off and the reaction cavity inwall inwall with cleaning reaction cavity.
Please refer to Fig. 3 c, the chlorine Si oxide 32 being washed away by the first process gas peels off and drops in reaction cavity from the inwall of air admission unit 31, on the chlorine silicon oxide layer 32 that in reaction cavity inwall or reaction cavity, miscellaneous part (as electrostatic chuck) surface is formed, now to pass into the second fluorine-containing process gas compared with low discharge as NF
3and ionized the plasma into F-, F-plasma and SiO
xcl
yin Si reaction generate SiF
4deng gaseous product, the unit of can being bled is taken away, so reaches the object of the inwall of cleaning reaction cavity.For avoiding NF
3gas taken away fast cannot be fully and byproduct of reaction react, in this step, control and regulation valve opening is half-open, reduces NF in reaction cavity 30
3the suction performance of gas, makes NF in reaction cavity
3tolerance and pressure increase.So, the time of staying of F-plasma in cavity is longer.Preferably, the interior NF of reaction cavity 30
3the pressure of gas remains and is less than or equal to 10mT, NF
3the flow of gas is for being less than or equal to 50sccm.
Then, carry out step 23, increase the pressure of the second process gas, in the plasma that makes the second process gas and air admission unit, unpeeled reaction by-products is with the inwall of cleaning air admission unit.
As shown in Figure 3 e, although the NF passing in step 22
3the partial reaction accessory substance that gas has been removed the byproduct of reaction of cavity inner wall and peeled off from air admission unit, but cannot thoroughly remove the byproduct of reaction not washed away by the first process gas in air admission unit.Therefore, in this step, further strengthen the air pressure in reaction cavity 30, in cavity, produce more NF
3the plasma of gas.Concrete, the valve opening of control and regulation valve is to approach full cut-off to regulate the pressure in reaction cavity.In this step, the NF passing into
3gas still remain low discharge, as be less than or equal to 50sccm, the undershoot speed in air admission unit 31 still remains less, and because valve opening approaches full cut-off, NF
3the plasma of gas can not taken away fast, and the time reacting with the byproduct of reaction of air admission unit 31 inwalls is extended.On the other hand, the closure of control valve valve makes plasma diffusion motion in cavity of reaction cavity interior 30, also has part F-plasma and upwards enters air admission unit 31.Therefore, not only extend the time of staying of F-plasma in reaction cavity, more utilize the anti-properties of flow of F-plasma under the interior elevated pressures of reaction cavity 30, increase the etching reaction to the unpeeled byproduct of reaction of cavity center top air admission unit 31 inwall, can remove thus the byproduct of reaction SiO at dead angle in air admission unit
xcl
y, as shown in Fig. 3 f.Preferably, NF
3the pressure of gas remains and is more than or equal to 60mT.
As known from the above, the present embodiment peels off the etching sediment in air admission unit by the air scour step that increases low-pressure high flow capacity fast, removes defect source; Again by increasing cavity reaction gases NF
3pressure further cavity inner wall and air admission unit inwall are cleaned, particularly utilize the intake method of high pressure low discharge to air admission unit inner wall washing, effectively promoted byproduct of reaction SiO
xcl
yelimination efficiency, thereby reduce the generation of crystal circle center agglomerated defect, promote the yield of wafer.
As a rule, the accessory substance producing in plasma etching allied processes is except SiO
xcl
youtside, also comprise carbon compound.Therefore the cavity cleaning method of plasma etching apparatus of the present invention also comprises the cleaning of the carbon compound layer to cavity inner wall.Specifically, after carrying out above steps, then in reaction cavity, pass into O
2gas, and ionization formation oxygen plasma, react with the C in carbon compound and generate CO or CO
2take away Deng the unit of being bled after gaseous product, so can clean by the thorough of the interior byproduct of reaction of realization response cavity.In another preferred embodiment of the present invention, complete SiO
xcl
yafter the cleaning of carbon compound layer, use the method for the chemical vapour deposition (CVD) SiO that regrows on reaction cavity inwall
xcl
ylayer, the cavity atmosphere during for stable plasma etching wafer.
In sum, cavity cleaning method of the present invention first uses low vacuum pressure, large flow gas rinses repeatedly to cavity, peel off most of etch by-products of air admission unit inwall, re-use compared with low vacuum pressure, the plasma of low discharge process gas cleans the etch by-products of peeling off and be deposited on cavity inner wall simultaneously, the last cavity internal pressure that again increases utilizes the anti-properties of flow of this plasma under high vacuum pressure to extend the time of staying of plasma in reaction cavity, increase the etching reaction to accessory substance in air admission unit inwall, remove the etch by-products at dead angle, finally reach while reducing wafer etching the accessory substance risk that drops, optimize the object of crystal circle center's agglomerated defect, and cleaning method of the present invention is realized simply with low cost.
Although the present invention discloses as above with preferred embodiment; so described many embodiment only give an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection domain that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a cavity cleaning method for plasma etching apparatus, described plasma etching apparatus comprises reaction cavity, air admission unit and the unit of bleeding, described cavity cleaning method comprises:
Step 1: pass into the first process gas and rinse described air admission unit, at least part of byproduct of reaction of described air admission unit inwall is peeled off;
Step 2: pass into the second process gas and form the plasma of described the second process gas, the plasma that makes described the second process gas with described in the reaction by-products of the byproduct of reaction that peels off and described reaction cavity inwall to clean the inwall of described reaction cavity; And
Step 3: increase the pressure of described the second process gas, make in the plasma of described the second process gas and described air admission unit unpeeled described reaction by-products to clean the inwall of described air admission unit.
2. cavity cleaning method according to claim 1, is characterized in that, described byproduct of reaction is SiO
xcl
y, described the second process gas is NF
3.
3. cavity cleaning method according to claim 1, is characterized in that, the gas flow of described the first process gas is greater than the gas flow of described the second process gas.
4. cavity cleaning method according to claim 1, is characterized in that, passes into the number of times that described the first process gas rinses described air admission unit and be more than or equal to 5 times in step 1.
5. cavity cleaning method according to claim 3, is characterized in that, the pressure of described the first process gas is less than the pressure of the second process gas described in step 2, and gas flow is for being more than or equal to 500sccm; The pressure of the second process gas described in step 2 is for being less than or equal to 10mT, and gas flow is for being less than or equal to 50sccm.
6. cavity cleaning method according to claim 5, is characterized in that, the pressure of the second process gas described in step 3 is for being more than or equal to 60mT, and gas flow is for being less than or equal to 50sccm.
7. cavity cleaning method according to claim 2, is characterized in that, also comprises passing into oxygen and being ionized forming plasma, to clean the step of the carbonaceous by-products in described reaction cavity.
8. cavity cleaning method according to claim 2, is characterized in that, also comprises one deck SiO that grows on described cavity inner wall by chemical vapour deposition (CVD)
xcl
ystep.
9. cavity cleaning method according to claim 1, is characterized in that, described air admission unit be arranged at described reaction cavity top and be positioned at wafer to be etched directly over.
10. according to the cavity cleaning method described in claim 1~9 any one, it is characterized in that, the described unit of bleeding is connected with described reaction cavity by control valve, and the aperture by controlling described control valve in each step of described cleaning method is to regulate the air pressure in described reaction cavity.
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Cited By (11)
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CN104867815A (en) * | 2015-04-29 | 2015-08-26 | 上海华力微电子有限公司 | Cleaning method of etching reaction chamber |
CN106373851A (en) * | 2016-10-24 | 2017-02-01 | 上海华力微电子有限公司 | Method for optimizing annular defect of wafer |
CN106840820A (en) * | 2016-11-29 | 2017-06-13 | 信利(惠州)智能显示有限公司 | CVD film and its etching processing method |
CN106967961A (en) * | 2017-04-14 | 2017-07-21 | 王宏兴 | A kind of method of removal CVD reaction cavity inwall deposition films |
CN106449345B (en) * | 2016-11-09 | 2018-08-28 | 上海华力微电子有限公司 | A kind of etching cavity that extends is begun to speak the maintenance method at service time interval |
CN110600364A (en) * | 2019-09-20 | 2019-12-20 | 武汉新芯集成电路制造有限公司 | Method for improving defects in wafer edge etching machine |
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CN114308947A (en) * | 2020-09-30 | 2022-04-12 | 中国科学院微电子研究所 | Cleaning method and cleaning device for polycrystalline silicon production equipment and polycrystalline silicon production equipment |
CN115318755A (en) * | 2021-05-10 | 2022-11-11 | 中国科学院微电子研究所 | Cleaning method of plasma doping process cavity |
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CN106840820A (en) * | 2016-11-29 | 2017-06-13 | 信利(惠州)智能显示有限公司 | CVD film and its etching processing method |
CN106967961A (en) * | 2017-04-14 | 2017-07-21 | 王宏兴 | A kind of method of removal CVD reaction cavity inwall deposition films |
CN111211065A (en) * | 2018-11-22 | 2020-05-29 | 长鑫存储技术有限公司 | Cleaning method of semiconductor production equipment and semiconductor process method |
CN110600364B (en) * | 2019-09-20 | 2022-04-15 | 武汉新芯集成电路制造有限公司 | Method for improving defects in wafer edge etching machine |
CN110600364A (en) * | 2019-09-20 | 2019-12-20 | 武汉新芯集成电路制造有限公司 | Method for improving defects in wafer edge etching machine |
CN110610845A (en) * | 2019-09-27 | 2019-12-24 | 扬州扬杰电子科技股份有限公司 | Method for cleaning groove etching cavity of P5000 machine |
CN111883411A (en) * | 2020-08-28 | 2020-11-03 | 上海华力微电子有限公司 | Method for improving etching residue of through hole |
CN111883411B (en) * | 2020-08-28 | 2023-02-03 | 上海华力微电子有限公司 | Method for improving etching residue of through hole |
CN114308947A (en) * | 2020-09-30 | 2022-04-12 | 中国科学院微电子研究所 | Cleaning method and cleaning device for polycrystalline silicon production equipment and polycrystalline silicon production equipment |
CN115318755A (en) * | 2021-05-10 | 2022-11-11 | 中国科学院微电子研究所 | Cleaning method of plasma doping process cavity |
CN115318755B (en) * | 2021-05-10 | 2024-04-12 | 中国科学院微电子研究所 | Cleaning method of plasma doping process chamber |
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