JPH05198515A - Semiconductor treatment device and semiconductor pretreatment device - Google Patents
Semiconductor treatment device and semiconductor pretreatment deviceInfo
- Publication number
- JPH05198515A JPH05198515A JP954792A JP954792A JPH05198515A JP H05198515 A JPH05198515 A JP H05198515A JP 954792 A JP954792 A JP 954792A JP 954792 A JP954792 A JP 954792A JP H05198515 A JPH05198515 A JP H05198515A
- Authority
- JP
- Japan
- Prior art keywords
- treatment chamber
- water
- wall
- processing chamber
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は気相成長(CVD) ，ドライ
エッチング等に用いる半導体処理装置とその前処理方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus used for vapor phase epitaxy (CVD), dry etching and the like and a pretreatment method thereof.
【０００２】近年，半導体デバイスの高集積化に伴いプ
ロセス中の発塵や，装置からの発塵の抑制が大きな課題
となっている。特に，化学反応を用いたCVD やエッチン
グプロセスではデバイスの微細化に対応するためのプロ
セスの低温化に伴いプラズマプロセスを多用するように
なってきた。In recent years, with the high integration of semiconductor devices, suppression of dust generation during processing and dust generation from devices has become a major issue. In particular, in the CVD and etching processes that use chemical reactions, plasma processes have come to be used more frequently as the process temperature has become lower to respond to device miniaturization.
【０００３】反応性ガスのプラズマでは，処理室内壁に
反応生成物が堆積し, この堆積物が最大の発塵源となっ
ていた。例えば, ウエハ上以外に堆積したCVD 膜は処理
室内壁の材料との膨張係数の違いにより剥離し，発塵し
ていた。エッチング装置では蒸気圧の高い反応生成物が
比較的温度の低い処理室内壁に付着し成長する。成長し
た反応生成物はCVD の場合と同様に厚く成長すると剥離
し，発塵していた。In the case of plasma of reactive gas, reaction products are deposited on the inner wall of the processing chamber, and the deposit is the largest dust source. For example, the CVD film deposited on other than the wafer was peeled off due to the difference in expansion coefficient from the material of the inner wall of the processing chamber, and dust was generated. In the etching apparatus, a reaction product having a high vapor pressure adheres to and grows on the inner wall of the processing chamber having a relatively low temperature. As with CVD, the grown reaction product peeled off when it grew thick and generated dust.
【０００４】[0004]
【従来の技術】プラズマCVD,エッチングはいずれにして
も反応生成物を処理室内壁に堆積し，この堆積物が発塵
源となるから定期的に洗浄する必要がある。洗浄には一
般的にウエット洗浄とドライ洗浄がある。2. Description of the Related Art In any case of plasma CVD and etching, reaction products are deposited on the inner wall of a processing chamber, and these deposits serve as a dust source, so it is necessary to clean them regularly. Generally, cleaning includes wet cleaning and dry cleaning.
【０００５】ドライ洗浄は反応生成物をエッチング可能
なガスのプラズマを生成して除去する方法が採られてい
る。この場合, 完全な洗浄はできないが, 手軽に行える
ため頻繁に実施することができる利点がある。The dry cleaning employs a method in which plasma of a gas capable of etching reaction products is generated and removed. In this case, complete cleaning cannot be performed, but there is an advantage that it can be performed frequently because it can be performed easily.
【０００６】ウエット洗浄は処理室を大気圧にして, 処
理室を分解し洗浄を行う。分解された処理室は内壁を
水, 有機溶剤, 酸等で洗浄され, さらに内部治具や部品
等も同様に洗浄され，場合によっては超音波洗浄を併用
することもある。このようにウエット洗浄は分解が必要
であるから装置の稼働率を低下させ, 装置の信頼性を損
なう可能性が生ずる。In wet cleaning, the processing chamber is brought to atmospheric pressure and the processing chamber is disassembled for cleaning. The disassembled processing chamber has its inner wall cleaned with water, organic solvent, acid, etc., and also internal jigs and parts are cleaned in the same way. In some cases, ultrasonic cleaning is also used. In this way, wet cleaning requires disassembly, which lowers the operating rate of the equipment and may impair the reliability of the equipment.
【０００７】通常は, 上記のドライ洗浄とウエット洗浄
を併用して, ウエット洗浄にかかる負担を軽減してい
る。Usually, the above-mentioned dry cleaning and wet cleaning are used together to reduce the burden of wet cleaning.
【０００８】[0008]
【発明が解決しようとする課題】上記のように, プラズ
マ処理装置では反応生成物のウエハ上以外への堆積が発
塵要因となっており, そのため，ドライ洗浄およびウエ
ット洗浄が行われている。その結果, 装置の稼働率, 信
頼性が低下していたので, 洗浄周期を長くし且つ発塵量
を低減する工夫が必要となっている。As described above, in the plasma processing apparatus, the deposition of the reaction products on other than the wafer is a factor of dust generation, and therefore the dry cleaning and the wet cleaning are performed. As a result, the operating rate and reliability of the equipment have declined, so it is necessary to devise ways to extend the cleaning cycle and reduce the amount of dust generation.
【０００９】本発明は発塵量を低減して, デバイスの製
造歩留と信頼性を向上し且つ処理装置の稼働率と信頼性
の向上を目的とする。An object of the present invention is to reduce the amount of dust generation, improve the manufacturing yield and reliability of devices, and improve the operating rate and reliability of processing equipment.
【００１０】[0010]
【課題を解決するための手段】上記課題の解決は，１）
被処理基板の処理を行う処理室と，該処理室内を加熱す
る手段と，処理に使用する排気系とは別の水分除去用の
排気系を有する半導体処理装置，あるいは２）堆積，エ
ッチング等の処理開始前に処理室内を加熱する工程と，
該加熱中に処理に使用する排気系とは別の排気系を使用
して該処理室内の水分を除去する工程を有する半導体処
理装置の前処理方法，あるいは３）前記加熱が反応生成
物を発生しない性質のガスのプラズマを処理室内に発生
させて行われる前記２）記載の半導体処理装置の前処理
方法，あるいは４）前記ガスが希ガス，フッ素系ガス，
塩素系ガスである前記３）記載の半導体処理装置の前処
理方法により達成される。[Means for Solving the Problems] 1)
A semiconductor processing apparatus having a processing chamber for processing a substrate to be processed, a means for heating the processing chamber, and an exhaust system for removing water different from an exhaust system used for processing, or 2) deposition, etching, etc. A step of heating the inside of the processing chamber before starting the processing,
A pretreatment method for a semiconductor processing apparatus including a step of removing water in the processing chamber by using an exhaust system different from an exhaust system used for processing during the heating, or 3) the heating generates a reaction product. 2) The pretreatment method for a semiconductor processing apparatus according to 2), which is performed by generating a plasma of a gas having a property that does not occur, or 4) the gas is a rare gas, a fluorine-based gas,
This is achieved by the pretreatment method for a semiconductor processing apparatus according to the above 3), which is a chlorine-based gas.
【００１１】[0011]
【作用】本発明者はプラズマ処理装置の発塵につき検討
した結果, 微粒子の生成過程および処理室内壁に付着し
た反応生成物の剥離過程に対し処理室内に残留する水分
が大きな影響を及ぼしていることを発見した（図３〜５
参照）。As a result of studying dust generation in the plasma processing apparatus, the present inventor has found that moisture remaining in the processing chamber has a great influence on the generation process of fine particles and the peeling process of reaction products adhering to the inner wall of the processing chamber. I discovered that (Figs. 3-5)
reference).
【００１２】図３はエッチング前の水のピークを示す図
である。この図は，処理室を洗浄して， 5×10-5 Torr
の到達真空度に達した時点の水の分圧を示す質量分析結
果である。このときの発生微粒子数をＡとする。FIG. 3 is a diagram showing a water peak before etching. This figure shows that the processing chamber has been cleaned and 5 × 10 -5 Torr
2 is a mass spectrometric result showing the partial pressure of water at the time when the ultimate vacuum of is reached. The number of generated fine particles at this time is A.
【００１３】図４はエッチング後の水のピークを示す図
である。ここでは，処理室を洗浄して， 5×10-5 Torr
の到達真空度に達し，ウエハを10枚エッチングした後の
水の分圧を示す。このときの発生微粒子数をＢとする。FIG. 4 is a diagram showing peaks of water after etching. Here, the processing chamber is cleaned and 5 × 10 -5 Torr
Shows the partial pressure of water after reaching the ultimate vacuum of 10 and etching 10 wafers. The number of generated fine particles at this time is B.
【００１４】図５はウエハ処理枚数に対する微粒子数
（個／６インチウエハ）の関係を示す図である。図よ
り，前記微粒子数Ａ，Ｂは水のピーク値に関係し，この
値が大きくなれば微粒子数も大きくなることが分かる。FIG. 5 is a diagram showing the relationship between the number of processed wafers and the number of fine particles (pieces / 6 inch wafer). From the figure, it can be seen that the numbers A and B of the fine particles are related to the peak value of water, and the larger the value, the larger the number of fine particles.
【００１５】そこで，本発明ではCVD やエッチング等の
プロセス開始前に処理室内に残留する水分を短時間に除
去する装置を提供する。すなわち, プロセス開始前に反
応生成物を発生しない性質のガスを処理室内に導入し，
RF電力う印加してそのプラズマを発生させる。このプラ
ズマにより処理室内壁は電子やイオンの衝撃を受けて急
激に温度が上昇する。一方, 処理室内部に残留する水分
は主に処理室内壁に吸着と離脱を繰り返しているが, こ
のプラズマにより吸着水分は離脱し排気される。ただし
この排気は, 通常プロセスで使用する排気系を使用する
と, 排気配管, 装置内部に吸着した堆積物に大きな影響
を与え返って悪い影響がでてくる。従って, 本発明では
水分除去のための排気をプロセスで使用する排気系とは
別の排気系を使用して副作用のない水分除去を行ってい
る（後記の図６〜７参照）。Therefore, the present invention provides an apparatus for removing moisture remaining in the processing chamber in a short time before the start of a process such as CVD or etching. That is, before starting the process, a gas that does not generate reaction products is introduced into the processing chamber,
RF power is applied to generate the plasma. Due to this plasma, the inner wall of the processing chamber is bombarded with electrons and ions, and the temperature rises rapidly. On the other hand, the water remaining in the processing chamber is repeatedly adsorbed and desorbed mainly on the inner wall of the processing chamber, but the adsorbed water is desorbed and exhausted by this plasma. However, if the exhaust system used in the normal process is used, this exhaust will have a large adverse effect on the exhaust pipes and the deposits adsorbed inside the equipment. Therefore, in the present invention, an exhaust system different from the exhaust system used for the process to remove water is used to remove water without side effects (see FIGS. 6 to 7 described later).
【００１６】この際，水分除去にプラズマを用いる代わ
りに，予め予熱したガスを真空中にパージして処理室内
壁の昇温を行ってもよい。あるいは処理室内の加熱方法
として赤外ランプを使用してもよい。At this time, instead of using plasma for removing water, preheated gas may be purged in vacuum to raise the temperature of the inner wall of the processing chamber. Alternatively, an infrared lamp may be used as a heating method for the processing chamber.
【００１７】[0017]
【実施例】図１は本発明の実施例１を説明する断面図で
ある。図において，１は処理室，２はプロセスガス導入
口，３は本発明による内部加熱用ガス導入口，４はプロ
セス用排気口，５はプロセス排気用ゲートバルブ，６は
本発明による水分除去用排気口，７は水分除去用ゲート
バルブ，８はウエハ側電極（ウエハステージ），９はキ
ャパシタ，10はRF電源である。EXAMPLE 1 FIG. 1 is a sectional view for explaining Example 1 of the present invention. In the figure, 1 is a processing chamber, 2 is a process gas inlet, 3 is an internal heating gas inlet according to the present invention, 4 is a process exhaust port, 5 is a process exhaust gate valve, and 6 is water removal according to the present invention. An exhaust port, 7 is a gate valve for removing water, 8 is an electrode on the wafer side (wafer stage), 9 is a capacitor, and 10 is an RF power supply.
【００１８】プロセス開始前にプロセス排気用ゲートバ
ルブ５を閉じ, 内部加熱用ガス導入口３より, 堆積原料
を含まないガス（Ar, Cl2, NF3, ・・・等) を処理室１
内に導入し，水分除去用排気口６より排気し，RF電力を
印加して処理室内にこれらのガスのプラズマを発生させ
る。この際，内壁より離脱した水分は水分除去用排気口
６より除去される。その後に本来のプロセスを行う。Before starting the process, the process exhaust gate valve 5 is closed, and a gas (Ar, Cl 2 , NF 3 , ..., Etc.) containing no deposition raw material is supplied from the internal heating gas inlet 3 to the processing chamber 1.
The gas is introduced into the chamber, exhausted through the moisture removing exhaust port 6, and RF power is applied to generate plasma of these gases in the processing chamber. At this time, the moisture separated from the inner wall is removed from the moisture removing exhaust port 6. After that, the original process is performed.
【００１９】水分除去用プラズマの発生条件の一例を次
に示す。 使用ガス： Ar，100 SCCM ガス圧力： 0.53〜1.0 Torr RF電力 ： 1500 W 図６はArプラズマで処理室内を加熱した場合の水の分圧
と加熱時間の関係を示す図である。An example of conditions for generating plasma for removing water is shown below. Gas used: Ar, 100 SCCM Gas pressure: 0.53 to 1.0 Torr RF power: 1500 W Fig. 6 is a diagram showing the relationship between the partial pressure of water and the heating time when the processing chamber is heated by Ar plasma.
【００２０】実施例のAr放電（内部加熱）ありの場合を
ａで示し，この場合のプラズマ発生条件は上記の通りで
ある。比較例として, Ar放電（内部加熱）なしの場合の
水の分圧の経時変化を点線ｂで示す。実施例では, 水の
分圧は全圧の1/100 以下にすることができる。The case of Ar discharge (internal heating) of the embodiment is indicated by a, and the plasma generation conditions in this case are as described above. As a comparative example, the dotted line b shows the change over time in the partial pressure of water without Ar discharge (internal heating). In the embodiment, the partial pressure of water can be 1/100 or less of the total pressure.
【００２１】図２は本発明の実施例２を説明する断面図
である。この例では，図１のプラズマに代えて，内部加
熱用ガス導入口３より，約 250℃に予熱された窒素(N2)
または空気を 1 SLM 流して処理室内の水分を除去した
後本来のプロセスを行う。FIG. 2 is a sectional view for explaining the second embodiment of the present invention. In this example, instead of the plasma of FIG. 1, nitrogen (N 2 ) preheated to about 250 ° C. from the internal heating gas inlet 3 was used.
Alternatively, flow the air through 1 SLM to remove the water in the processing chamber and then perform the original process.
【００２２】また，内部加熱は前記のように，処理室内
部に赤外または遠赤外ランプを導入して行ってもよい。
図７は実施例の効果を示す図である。The internal heating may be performed by introducing an infrared or far infrared lamp into the processing chamber as described above.
FIG. 7 is a diagram showing the effect of the embodiment.
【００２３】図はウエハ処理枚数に対する微粒子数の関
係を示し，実施例の内部加熱ありはａで，従来例の内部
加熱なしはｂで示される。The figure shows the relationship between the number of fine particles and the number of processed wafers, which is indicated by a for internal heating in the embodiment and b for internal heating in the conventional example.
【００２４】[0024]
【発明の効果】本発明によれば，プロセス開始前の処理
室内の水分を除去することにより，処理室内の発塵量を
低減することができた。この結果, デバイスの製造歩留
と信頼性を向上し且つ処理装置の稼働率と信頼性の向上
することができた。According to the present invention, the amount of dust generated in the processing chamber can be reduced by removing the water in the processing chamber before the start of the process. As a result, it was possible to improve the manufacturing yield and reliability of the device and improve the operating rate and reliability of the processing equipment.
【図１】 本発明の実施例１を説明する断面図FIG. 1 is a sectional view illustrating a first embodiment of the present invention.
【図２】 本発明の実施例２を説明する断面図FIG. 2 is a sectional view illustrating a second embodiment of the present invention.
【図３】 エッチング前の水のピークを示す図FIG. 3 is a diagram showing a water peak before etching.
【図４】 エッチング後の水のピークを示す図FIG. 4 is a diagram showing water peaks after etching.
【図５】 ウエハ処理枚数に対する微粒子数の関係を示
す図FIG. 5 is a diagram showing a relationship between the number of processed wafers and the number of fine particles.
【図６】 Arプラズマ加熱に対する水の分圧と加熱時間
の関係を示す図FIG. 6 is a diagram showing the relationship between the partial pressure of water and the heating time for Ar plasma heating.
【図７】 実施例の効果を示す図FIG. 7 is a diagram showing the effect of the embodiment.
１ 処理室 ２ プロセスガス導入口 ３ 本発明による内部加熱用ガス導入口 ４ プロセス用排気口 ５ プロセス排気用ゲートバルブ ６ 本発明による水分除去用排気口 ７ 水分除去用ゲートバルブ ８ ウエハ側電極（ウエハステージ） ９ キャパシタ 10 RF電源 DESCRIPTION OF SYMBOLS 1 processing chamber 2 process gas inlet 3 gas inlet for internal heating according to the present invention 4 exhaust port for process 5 gate valve for process exhaust 6 exhaust port for removing moisture according to the present invention 7 gate valve for removing moisture 8 wafer side electrode (wafer Stage) 9 Capacitor 10 RF power supply
Claims (4)
理室内を加熱する手段と，処理に使用する排気系とは別
の水分除去用の排気系を有することを特徴とする半導体
処理装置。1. A semiconductor processing comprising a processing chamber for processing a substrate to be processed, a means for heating the processing chamber, and an exhaust system for removing water, which is different from an exhaust system used for the processing. apparatus.
室内を加熱する工程と，該加熱中に処理に使用する排気
系とは別の排気系を使用して該処理室内の水分を除去す
る工程を有することを特徴とする半導体処理装置の前処
理方法。2. A step of heating the inside of the processing chamber before the start of processing such as deposition and etching, and an exhaust system different from the exhaust system used for the processing during the heating to remove water in the processing chamber. A pretreatment method for a semiconductor processing apparatus, comprising:
のガスのプラズマを処理室内に発生させて行われること
を特徴とする請求項２記載の半導体処理装置の前処理方
法。3. The pretreatment method for a semiconductor processing apparatus according to claim 2, wherein the heating is performed by generating plasma of a gas that does not generate a reaction product in the processing chamber.
系ガスであることを特徴とする請求項３記載の半導体処
理装置の前処理方法。4. The pretreatment method for a semiconductor processing apparatus according to claim 3, wherein the gas is a rare gas, a fluorine-based gas, or a chlorine-based gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP954792A JPH05198515A (en) | 1992-01-23 | 1992-01-23 | Semiconductor treatment device and semiconductor pretreatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP954792A JPH05198515A (en) | 1992-01-23 | 1992-01-23 | Semiconductor treatment device and semiconductor pretreatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05198515A true JPH05198515A (en) | 1993-08-06 |
Family
ID=11723305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP954792A Withdrawn JPH05198515A (en) | 1992-01-23 | 1992-01-23 | Semiconductor treatment device and semiconductor pretreatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05198515A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003135952A (en) * | 2001-11-01 | 2003-05-13 | Nec Corp | Plasma treating system and plasma treating method |
| JP2007294279A (en) * | 2006-04-26 | 2007-11-08 | Matsushita Electric Ind Co Ltd | Plasma treatment device, and plasma treatment method |
| JP2011258943A (en) * | 2010-05-14 | 2011-12-22 | Semiconductor Energy Lab Co Ltd | Method of depositing thin film, and method of manufacturing transistor |
| KR20150118552A (en) * | 2014-04-14 | 2015-10-22 | 아익스트론 에스이 | Device and method for exhaust gas purification at a cvd-reactor |
| DE102015108163A1 (en) | 2014-05-26 | 2015-11-26 | Canon K.K. | IMAGE FORMING APPARATUS |
-
1992
- 1992-01-23 JP JP954792A patent/JPH05198515A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003135952A (en) * | 2001-11-01 | 2003-05-13 | Nec Corp | Plasma treating system and plasma treating method |
| JP2007294279A (en) * | 2006-04-26 | 2007-11-08 | Matsushita Electric Ind Co Ltd | Plasma treatment device, and plasma treatment method |
| JP2011258943A (en) * | 2010-05-14 | 2011-12-22 | Semiconductor Energy Lab Co Ltd | Method of depositing thin film, and method of manufacturing transistor |
| KR20150118552A (en) * | 2014-04-14 | 2015-10-22 | 아익스트론 에스이 | Device and method for exhaust gas purification at a cvd-reactor |
| JP2015204461A (en) * | 2014-04-14 | 2015-11-16 | アイクストロン、エスイー | Device and method for exhaust gas purification in cvd reactor |
| DE102015108163A1 (en) | 2014-05-26 | 2015-11-26 | Canon K.K. | IMAGE FORMING APPARATUS |
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