CN103956368B - The encapsulation structure of wafer level image sensing module - Google Patents
The encapsulation structure of wafer level image sensing module Download PDFInfo
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- CN103956368B CN103956368B CN201410211949.6A CN201410211949A CN103956368B CN 103956368 B CN103956368 B CN 103956368B CN 201410211949 A CN201410211949 A CN 201410211949A CN 103956368 B CN103956368 B CN 103956368B
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Abstract
The present invention discloses the encapsulation structure of a kind of wafer level image sensing module, comprise image sensor chip, transparent cover plate, have between transparent cover plate edge and the top surface edge of image sensor chip and support cofferdam thus between transparent cover plate and image sensor chip, form cavity, this is supported and is bonded by glue layer between cofferdam and image sensor chip, support cofferdam to be made up of the first support cofferdam layer of mounted on top and the 2nd support cofferdam layer, this the first support cofferdam layer contacts with transparent cover plate, this the 2nd support cofferdam layer contacts with image sensor chip, the described 2nd continuously arranged breach in some of support Ceng Nei side, cofferdam, the surface that support cofferdam contacts with image sensor chip is evenly provided with some recessed holes. the present invention prevents glue from spreading, simultaneously with the cofferdam part of glass wrong, original width can be ensured, do not reducing under the prerequisite supporting cofferdam width guarantor's image sensing device encapsulation bonding force, the part of flowing gathers in breach, preventing glue to spread, reliability increase further reduces device volume simultaneously.
Description
Technical field
The present invention relates to the encapsulation structure of a kind of wafer level image sensing module, belong to technical field of semiconductor encapsulation.
Background technology
Image sensor has been widely used in the digital device of such as digital camera, camera phone etc. Image sensor module can comprise the image sensor for graphic information is converted to telecommunications breath. Specifically, image sensor can comprise photon conversion can become electronics to show and the semiconducter device of storage figure picture. The example of image sensor comprises charge-coupled device (CCD), complementary metal oxide silicon (CMOS) image sensor (CIS) etc.
In conventional images sensor, edge, cofferdam and the photosensitive district of induction chip all need to retain certain distance, prevent in the process of glass plastic roll, pressing, and colloid overflows to the photosensitive district of induction chip, affects image quality. Due to the restriction of excessive glue, the width in cofferdam is pure in bigger limitation, directly has influence on the reliability of CIS product, it is easy to the problem of layering occur.
Summary of the invention
It is an object of the present invention to provide the encapsulation structure of a kind of wafer level image sensing module, the encapsulation structure of this wafer level image sensing module prevents glue from spreading, simultaneously with the cofferdam part of glass wrong, original width can be ensured, do not reducing under the prerequisite supporting cofferdam width guarantor's image sensing device encapsulation bonding force, the part of flowing gathers in breach, prevents glue to spread, and reliability increase further reduces device volume simultaneously.
For achieving the above object, the technical solution used in the present invention is: the encapsulation structure of a kind of wafer level image sensing module, comprise image sensor chip, transparent cover plate, the upper surface of this image sensor chip has photosensitive district, have between described transparent cover plate edge and the top surface edge of image sensor chip and support cofferdam thus between transparent cover plate and image sensor chip, form cavity, this is supported and is bonded by glue layer between cofferdam and image sensor chip, the edge areal distribution of image sensor chip lower surface has some blind holes, described image sensor chip lower surface and surface, blind hole side have passivation layer, this blind via bottom has the pin pad of image sensor chip, described passivation layer and the opposing surface of image sensor chip have metallic conduction graph layer, one welding resisting layer is positioned at metallic conduction graph layer and the opposing surface of passivation layer, this welding resisting layer has some through holes, one weldering ball is electrically connected with metallic conduction graph layer by described through hole, described support cofferdam is made up of the first support cofferdam layer of mounted on top and the 2nd support cofferdam layer, this the first support cofferdam layer contacts with transparent cover plate, this the 2nd support cofferdam layer contacts with image sensor chip, inside described 2nd support cofferdam layer, mask has some continuously arranged V-notch, described 2nd support cofferdam layer four corner are equipped with arc notch, the surface that described support cofferdam contacts with image sensor chip is evenly provided with some recessed holes.
In technique scheme, further improved plan is as follows:
1., in such scheme, described support cofferdam thickness is 20 ~ 50 microns.
2., in such scheme, described support cofferdam width is 200 ~ 300 microns, and the diameter in described recessed hole is 5 ~ 10 microns.
Owing to technique scheme is used, the present invention compared with prior art has following advantage and effect:
Semiconducter device wafer level packaging structure of the present invention, have between its transparent cover plate edge and top surface edge of image sensor chip and support cofferdam thus between transparent cover plate and image sensor chip, form cavity, this is supported and is bonded by glue layer between cofferdam and image sensor chip, support cofferdam to be made up of the first support cofferdam layer of mounted on top and the 2nd support cofferdam layer, 2nd support cofferdam layer contacts with image sensor chip, inside 2nd support cofferdam layer, mask has some continuously arranged V-notch, 2nd support cofferdam layer four corner are equipped with arc notch, the surface that support cofferdam contacts with image sensor chip is evenly provided with some recessed holes, the the first support cofferdam layer contacted with transparent cover plate takes smooth design, glue is in the process of bonding, gap portions can effectively assemble the glue of spilling, prevent glue from spreading, simultaneously with the cofferdam part of glass wrong, original width can be ensured, do not reducing under the prerequisite supporting cofferdam width guarantor's image sensing device encapsulation bonding force, the part of flowing gathers in breach, glue is prevented to spread, reliability increase further reduces device volume simultaneously.
Accompanying drawing explanation
Accompanying drawing 1 is the encapsulation architecture schematic diagram of wafer level image sensing module of the present invention;
Accompanying drawing 2 be wafer level image sensing module of the present invention encapsulation structure in support cofferdam structure schematic diagram.
In above accompanying drawing: 1, image sensor chip; 2, transparent cover plate; 3, photosensitive district; 4, cofferdam is supported; 41, the first support cofferdam layer; 42, the 2nd support cofferdam layer; 5, glue layer; 6, blind hole; 7, passivation layer; 8, pin pad; 9, metallic conduction graph layer; 10, welding resisting layer; 11, through hole; 12, ball is welded; 13, cavity; 14, V-notch; 15, arc notch; 16, recessed hole.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment: the encapsulation structure of a kind of wafer level image sensing module, encapsulation structure as shown in accompanying drawing 1 ~ 2, comprise image sensor chip 1, transparent cover plate 2, the upper surface of this image sensor chip 1 has photosensitive district 3, have between described transparent cover plate 2 edge and the top surface edge of image sensor chip 1 and support cofferdam 4 thus between transparent cover plate 2 and image sensor chip 1, form cavity 13, this is supported and is bonded by glue layer 5 between cofferdam 4 and image sensor chip 1, the edge areal distribution of image sensor chip 1 lower surface has some blind holes 6, described image sensor chip 1 lower surface and surface, blind hole 6 side have passivation layer 7, there is bottom this blind hole 6 the pin pad 8 of image sensor chip 1, described passivation layer 7 surface opposing with image sensor chip 1 has metallic conduction graph layer 9, one welding resisting layer 10 is positioned at metallic conduction graph layer 9 surface opposing with passivation layer 7, this welding resisting layer 10 has some through holes 11, one weldering ball 12 is electrically connected with metallic conduction graph layer 9 by described through hole 11, described support cofferdam 4 is made up of the first support cofferdam layer 41 of mounted on top and the 2nd support cofferdam layer 42, this the first support cofferdam layer 41 contacts with transparent cover plate 2, this the 2nd support cofferdam layer 42 contacts with image sensor chip 1, inside described 2nd support cofferdam layer 42, mask has some continuously arranged V-notch 14, described 2nd support cofferdam Ceng42Si Ge corner is equipped with arc notch 15, the surface that described support cofferdam 4 contacts with image sensor chip 1 is evenly provided with some recessed holes 16.
Above-mentioned support cofferdam 4 thickness 20 microns or 35 microns or 45 microns.
Above-mentioned support cofferdam 4 width is 220 microns or 260 microns or 300 microns, and the diameter in described recessed hole 16 is 6 microns or 8 microns or 10 microns.
When adopting above-mentioned semiconductor device wafer level packaging structure, it prevents glue from spreading, simultaneously with the cofferdam part of glass wrong, original width can be ensured, do not reducing under the prerequisite supporting cofferdam width guarantor's image sensing device encapsulation bonding force, the part of flowing gathers in breach, prevents glue to spread, and reliability increase further reduces device volume simultaneously.
Above-described embodiment, only for the technical conceive of the present invention and feature are described, its object is to allow person skilled in the art can understand the content of the present invention and implement according to this, can not limit the scope of the invention with this. All equivalences done according to spirit of the invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (1)
1. the encapsulation structure of a wafer level image sensing module, it is characterized in that: comprise image sensor chip (1), transparent cover plate (2), the upper surface of this image sensor chip (1) has photosensitive district (3), there is between the top surface edge of described transparent cover plate (2) edge and image sensor chip (1) support cofferdam (4) thus between transparent cover plate (2) and image sensor chip (1), form cavity (13), this supports between cofferdam (4) and image sensor chip (1) by glue layer (5) bonding, the edge areal distribution of image sensor chip (1) lower surface has some blind holes (6), described image sensor chip (1) lower surface and blind hole (6) surface, side have passivation layer (7), this blind hole (6) bottom has the pin pad (8) of image sensor chip (1), the opposing surface of described passivation layer (7) and image sensor chip (1) has metallic conduction graph layer (9), one welding resisting layer (10) is positioned at metallic conduction graph layer (9) surface opposing with passivation layer (7), this welding resisting layer (10) has some through holes (11), one weldering ball (12) is electrically connected with metallic conduction graph layer (9) by described through hole (11), described support cofferdam (4) is made up of the first support cofferdam layer (41) of mounted on top and the 2nd support cofferdam layer (42), this first support cofferdam layer (41) contacts with transparent cover plate (2), this the 2nd support cofferdam layer (42) contacts with image sensor chip (1), described 2nd support cofferdam layer (42) inner side mask has some continuously arranged V-notch (14), described 2nd support cofferdam layer (42) four corner are equipped with arc notch (15), the surface that described support cofferdam (4) contacts with image sensor chip (1) is evenly provided with some recessed holes (16).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410211949.6A CN103956368B (en) | 2014-05-20 | 2014-05-20 | The encapsulation structure of wafer level image sensing module |
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| CN201410211949.6A CN103956368B (en) | 2014-05-20 | 2014-05-20 | The encapsulation structure of wafer level image sensing module |
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| CN103956368B true CN103956368B (en) | 2016-06-15 |
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| TWI667734B (en) * | 2016-03-14 | 2019-08-01 | 大陸商蘇州晶方半導體科技股份有限公司 | Packaging structure for semiconductor chip and packaging method thereof |
| CN208142180U (en) * | 2018-01-23 | 2018-11-23 | 北京思比科微电子技术股份有限公司 | A kind of cmos image sensor encapsulating structure |
| CN109375295A (en) * | 2018-12-24 | 2019-02-22 | 无锡奥夫特光学技术有限公司 | A kind of optical window with edge microstructures |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101065844A (en) * | 2005-01-04 | 2007-10-31 | 株式会社映煌 | Solid-state image pickup device and method for manufacturing same |
| CN101771057A (en) * | 2008-12-26 | 2010-07-07 | 佛山普立华科技有限公司 | Camera module |
| CN203871334U (en) * | 2014-05-20 | 2014-10-08 | 苏州科阳光电科技有限公司 | Packaging structure of wafer level image sensing module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2012018993A (en) * | 2010-07-06 | 2012-01-26 | Toshiba Corp | Camera module and method of manufacturing the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101065844A (en) * | 2005-01-04 | 2007-10-31 | 株式会社映煌 | Solid-state image pickup device and method for manufacturing same |
| CN101771057A (en) * | 2008-12-26 | 2010-07-07 | 佛山普立华科技有限公司 | Camera module |
| CN203871334U (en) * | 2014-05-20 | 2014-10-08 | 苏州科阳光电科技有限公司 | Packaging structure of wafer level image sensing module |
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Address after: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee after: Suzhou Keyang Semiconductor Co., Ltd Address before: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee before: SUZHOU KEYANG PHOTOELECTRIC TECHNOLOGY CO., LTD. |
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