CN103943700A - InGaAsN thin film grown on GaAs substrate and manufacturing method of InGaAsN thin film - Google Patents
InGaAsN thin film grown on GaAs substrate and manufacturing method of InGaAsN thin film Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 126
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 239000010409 thin film Substances 0.000 title abstract description 13
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 238000007872 degassing Methods 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 43
- 239000000463 material Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003887 surface segregation Methods 0.000 description 1
- -1 surfacing Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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Abstract
The invention discloses an InGaAsN thin film grown on a GaAs substrate. The InGaAsN thin film comprises a GaAs buffer layer grown on the GaAs substrate, and an InGaAsN epitaxial layer thin film grown on the GaAs buffer layer. The invention further discloses a manufacturing method of the InGaAsN thin film grown on the GaAs substrate. The molecular beam epitaxy growth method is adopted for the GaAs buffer layer and the InGaAsN epitaxial layer thin film. The InGaAsN thin film obtained through the manufacturing method is flat in surface and uniform in composition, and the bandwidth of the InGaAsN thin film is l eV. The InGaAsN thin film and the manufacturing method of the InGaAsN thin film have the positive promoting significance in the field of semiconductor devices and particularly in the field of solar cells.
Description
Technical field
The present invention relates to the technical field of semiconductor laminated solar cell material, particularly a kind of InGaAsN film on GaAs substrate and preparation method thereof that is grown in.
Background technology
Along with developing rapidly of solar energy power generating industry and market, and under the traction of spacecraft energy resource system demand, photovoltaic technology constantly obtains important breakthrough: crystalline silicon, amorphous silicon, polycrystalline silicon solar cell, III-V compound semiconductor battery, II-VI compound semiconductor battery etc., increasing solar cell technology reaches its maturity, simultaneously, corresponding photoelectric conversion efficiency improves constantly, and makes the photovoltaic technology of today all obtain application more and more widely in space and ground.Developing rapidly of III-V compound semiconductor battery technology based on GaAs is the most noticeable, landmark breakthrough; And GaAs base system efficiency of solar cell is high, anti-radiation performance good, high temperature resistant, good reliability, meet the requirement of space environment to solar cell, therefore, GaAs base system solar cell just progressively replaces silicon series solar cell in space science field, become the main power source of space solar power system.At present, the GaAs efficient multi-node stacked solar cell, cascade solar cell based on GaAs substrate has obtained the photoelectric conversion efficiency of > 41%.Due to being with as 1.42eV of GaAs material, and unijunction GaAs solar cell can only absorb the sunlight of a certain specific wavelength, and therefore its photoelectric conversion efficiency is restricted.In order to improve the utilance of solar cell to sunlight, need to adopt many knot lamination solar cell structures, solar spectrum is carried out to " cutting apart ".
On this, obtain more high-photoelectric transformation efficiency, the coupling of being with of tying stacked solar cell, cascade solar cell is crucial more.Conventional three knot GaAs are solar cell aspect at present, it is mainly GaInP/InGaAs/Ge (1.84/1.4/0.67) structure solar cell, this system, taking Lattice Matching as overriding concern principle, has limited the selection of material system, and the conversion efficiency room for promotion of battery is very limited.In order to solve the problem of the serious restriction three knot laminated cell performances of band gap mismatch, state-of-the-art technology attempts adopting the Lattice Matching that GaAs is substrate, and end battery bandwidth becomes the more satisfactory of 1eV and can be with coupling system, and conversion efficiency can increase like this.Except three knot laminated cells, calculate by theory, the material that bandwidth is 1eV also can be used as the 3rd junction battery of four knot stacked solar cell, cascade solar cells, can be with like this coupling even more ideal (1.8/1.4/1.0/0.67eV), and the conversion efficiency of light can be higher.Be that the material of 1eV is In and apply at present maximum bandwidth
0.3ga
0.7as, still, due to In
0.3ga
0.7as and GaAs lattice mismatch large (lattice mismatch is 2.15%) can reduce thin film epitaxy quality, threading dislocation, stress that lattice mismatch brings, can make a large amount of dislocation, defect and the surface undulations of generation in epitaxial material body, thereby the performance of deterioration of device, causes solar cell photoelectric conversion efficiency low.For reducing defect concentration, growth In
0.3ga
0.7as need to introduce the more complicated resilient coating link of growth technique, has increased undoubtedly many time and Financial cost, is unfavorable for the trend of current solar cell development, and therefore new 1eV material needs further to be developed.Research discovery, rare N semiconducting compound,, in traditional III-V family semiconducting compound, is incorporated to a small amount of N, forms polynary semiconducting compound, and this material system has unique bandgap.Wherein, this rare N semiconducting compound of InGaAsN, for solar cell, there is especially tempting Research Prospects, because this material system not only can regulate bandwidth (theoretic bandwidth can reach 1eV) on a large scale, and in the time that content ratio is In/N=2.8, InGaAsN crystalline material just mates completely with GaAs substrate lattice.Such energy gap and lattice constant feature are the ideal materials of solar cell the 3rd knot.But the acquisition of GaInNAs film is very difficult: first, there is a limiting value in N being incorporated in GaAs, is about 2%, is 1eV and will realize InGaAsN material bandwidth, the content of N must reach 3% left and right, and it is very difficult will realizing as seen N being effectively incorporated in material; Secondly, make InGaAsN and GaAs Lattice Matching, In/N=2.8 in material, it is also very large accurately controlling this ratio difficulty; Finally, after being incorporated to of N, material is also very easily separated, and especially In atom, easily separates out on surface, is separated simultaneously and easily occurs, and being evenly incorporated to of In and N also has certain difficulty.Therefore the epitaxial growth of 1eV InGaAsN is the emphasis of research always, especially in solar cell field.And according to current growth technology, the especially development of low temperature MBE technology, can possess the feasibility of growing with the material InGaAsN for 1eV.
Summary of the invention
For the above-mentioned shortcoming that overcomes prior art is with not enough, the object of the present invention is to provide the InGaAsN film on a kind of GaAs of being grown in substrate, surfacing, crystal mass are good.
Another object of the present invention is to provide the preparation method of the InGaAsN film on the above-mentioned GaAs of being grown in substrate.
Object of the present invention is achieved through the following technical solutions:
Be grown in the InGaAsN film on GaAs substrate, comprise the GaAs resilient coating that is grown on GaAs substrate, be grown in the InGaAsN epitaxial loayer film on GaAs resilient coating.
The thickness of described GaAs resilient coating is 100～150nm.
The thickness of described InGaAsN epitaxial loayer film is 300nm～1 μ m.
A preparation method who is grown in the InGaAsN film on GaAs substrate, comprises the following steps:
(1) clean GaAs substrate;
(2) GaAs substrate is carried out to degasification preliminary treatment;
(3) GaAs substrate is carried out to deoxidize processing;
(4) growth GaAs resilient coating: GaAs underlayer temperature is between 540 DEG C～580 DEG C, and Ga source temperature is 900 DEG C～950 DEG C, and the temperature in As source is 240～270 DEG C, chamber pressure 3 × 10
-5～1 × 10
-6torr, V-III line ratio is 20～30, growth rate is 0.7～1.5ML/s, growth GaAs resilient coating;
(5) growth InGaAsN epitaxial loayer film: GaAs underlayer temperature is at 380～440 DEG C, and Ga source temperature is 900 DEG C～950 DEG C, and the temperature in As source is 240～270 DEG C, chamber pressure 2.0～3.0 × 10
-5torr, in the situation that being not counted in N, V-III line ratio is 20～35, the power that produces radio frequency N plasma is 180～200W, N
2flow is 0.1～0.2sccm, the speed of growth 1.0～1.6ML/s, growth InGaAsN epitaxial loayer film.
The described cleaning of step (1) GaAs substrate, is specially:
Ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; GaAs substrate is placed on to H
2sO
4: H
2o
2: H
2corrosion 1～2 minute in O solution (3:1:1); Clean and remove oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after cleaning is with drying up through the drying nitrogen filtering.
Step (2) is described carries out degasification preliminary treatment to GaAs substrate, is specially:
GaAs substrate after cleaning is sent into the pre-degasification of molecular beam epitaxy Sample Room half an hour; Send into again 300～400 DEG C of transfer chambers degasification 1～1.5 hour, send into growth room after completing degasification.
Step (3) is described carries out deoxidize processing to GaAs substrate, is specially:
Under the protection of arsenic line, GaAs underlayer temperature is risen to 600～650 DEG C, high-temperature baking 10～15 minutes.
The thickness of described GaAs resilient coating is 100～150nm.
The thickness of described InGaAsN epitaxial loayer film is 300nm～1 μ m.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) the InGaAsN film being grown on GaAs substrate of the present invention, first at GaAs Grown GaAs resilient coating, simple in structure, the InGaAsN film surface that obtains is smooth, composition is even, is conducive to actual production application.
(2) preparation method of the present invention, application of cold temperature MBE technology, what obtain is grown in the InGaAsN film on GaAs substrate, bandwidth is 1eV, is a new breakthrough in technical field, can be to field of semiconductor devices, especially, there is positive promotion meaning in solar cell field.
(3) what preparation method of the present invention obtained is grown in the InGaAsN film on GaAs substrate, has realized four kinds of components and has evenly been incorporated to, and efficiently solves growth InGaAsN and easily occurs the phenomenon being separated, thereby obtain the quaternary thin-film material of better quality.
Brief description of the drawings
Fig. 1 is the schematic diagram that is grown in the InGaAsN film on GaAs substrate prepared by embodiments of the invention.
Fig. 2 is the room temperature fluorescence spectrogram that is grown in the InGaAsN film on GaAs substrate prepared by embodiments of the invention.
Fig. 3 is the scanning electron microscope diagram that is grown in the InGaAsN film on GaAs substrate prepared by embodiments of the invention.
Fig. 4 be embodiments of the invention prepare be grown in the InGaAsN film secondary ion mass spectroscopy figure on GaAs substrate.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment 1
The preparation method who is grown in the InGaAsN film on GaAs substrate of the present embodiment, comprises the following steps:
(1) clean GaAs substrate, be specially:
Adopt the n-GaAs substrate in (001) crystal orientation; Ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; GaAs substrate is placed on to H
2sO
4: H
2o
2: H
2corrosion 1 minute in O solution (3:1:1); Clean and remove oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after cleaning is with drying up through the drying nitrogen filtering.
(2) GaAs substrate is carried out to degasification preliminary treatment, is specially:
GaAs substrate after cleaning is sent into the pre-degasification of molecular beam epitaxy Sample Room half an hour; Send into again 300 DEG C of transfer chambers degasification 1.5 hours, send into growth room after completing degasification;
(3) GaAs substrate is carried out to deoxidize processing, be specially: under the protection of arsenic line, GaAs underlayer temperature is risen to 600 DEG C, high-temperature baking 15 minutes.
(4) growth GaAs resilient coating: GaAs underlayer temperature is 540 DEG C, and Ga source temperature is 900 DEG C, and the temperature in As source is 240 DEG C, chamber pressure 1 × 10
-6torr, V-III line ratio is 20, growth rate is 0.7ML/s, the GaAs resilient coating that growth thickness is 100nm; This step plays an important role to the evenness of InGaAsN epitaxial loayer film surface.
(5) growth InGaAsN epitaxial loayer film: GaAs underlayer temperature is 380 DEG C, and Ga source temperature is 900 DEG C, and the temperature in As source is 240 DEG C, and chamber pressure is 3.0 × 10
-5torr, in the situation that being not counted in N, V-III line ratio is 20, the power that produces radio frequency N plasma is 180W, N
2flow is 0.1sccm, speed of growth 1.0ML/s, the InGaAsN epitaxial loayer film that growth thickness is 300nm.
As shown in Figure 1, prepared by the present embodiment is grown in the InGaAsN film on GaAs substrate, comprises the GaAs resilient coating 12 that is grown on GaAs substrate 11, is grown in the InGaAsN epitaxial loayer film 13 on GaAs resilient coating 12.
Fig. 2 is the room temperature fluorescence spectrogram that is grown in the InGaAsN film on GaAs substrate prepared by the present embodiment, and as shown in Figure 2, the bandwidth of InGaAsN epitaxial loayer film is 1eV, and the preparation method of the present invention InGaAsN that can successfully grow is described.
Fig. 3 is the scanning electron microscope diagram that is grown in the InGaAsN film on GaAs substrate prepared by the present embodiment.As shown in Figure 3, the surface of InGaAsN epitaxial loayer film is more smooth, does not have the segregation phenomena of In atom, illustrates that preparation method of the present invention can effectively avoid InGaAsN to be separated, and improves the quality of film.
Fig. 4 be the present embodiment prepare be grown in the InGaAsN film secondary ion mass spectroscopy figure on GaAs substrate.As shown in Figure 4, the distribution situation of the each element of InGaAsN epitaxial loayer film in material.Along with the increase of secondary ion etch period, the strength information of four kinds of elements is all more stable, illustrates that each element is equally distributed in longitudinal degree of depth of film, and especially for In and N atom, this being uniformly distributed is very rare.
GaAs resilient coating of the present invention and InGaAsN epitaxial loayer film all adopt molecular beam epitaxy accretion method, not only can N atom be carried out and is effectively incorporated to, thereby the quaternary semiconductor material system that acquisition bandwidth is 1eV can improve again the evenness of film surface, avoid the surface segregation phenomenon of In atom.
Embodiment 2
The preparation method who is grown in the InGaAsN film on GaAs substrate of the present embodiment, comprises the following steps:
(1) clean GaAs substrate, be specially:
Adopt the n-GaAs substrate in (001) crystal orientation; Ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; GaAs substrate is placed on to H
2sO
4: H
2o
2: H
2corrosion 2 minutes in O solution (3:1:1); Clean and remove oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after cleaning is with drying up through the drying nitrogen filtering.
(2) GaAs substrate is carried out to degasification preliminary treatment, is specially:
GaAs substrate after cleaning is sent into the pre-degasification of molecular beam epitaxy Sample Room half an hour; Send into again 400 DEG C of transfer chambers degasification 1 hour, send into growth room after completing degasification;
(3) GaAs substrate is carried out to deoxidize processing, be specially: under the protection of arsenic line, GaAs underlayer temperature is risen to 650 DEG C, high-temperature baking 10 minutes.
(4) growth GaAs resilient coating: GaAs underlayer temperature is 580 DEG C, and Ga source temperature is 950 DEG C, and the temperature in As source is 270 DEG C, and chamber pressure is 3 × 10
-5t
orr, V-III line ratio is 30, growth rate is 1.5ML/s, the GaAs resilient coating that growth thickness is 150nm; This step plays an important role to the evenness of InGaAsN epitaxial loayer film surface.
(5) growth InGaAsN epitaxial loayer film: GaAs underlayer temperature is at 440 DEG C, and Ga source temperature is 950 DEG C, and the temperature in As source is 270 DEG C, chamber pressure 2.0 × 10
-5torr, in the situation that being not counted in N, V-III line ratio is 35, the power that produces radio frequency N plasma is 200W, N
2flow is 0.2sccm, speed of growth 1.6ML/s, and growth thickness is the InGaAsN epitaxial loayer film of 1.0 μ m.
Prepared by the present embodiment is grown in the InGaAsN film on GaAs substrate, comprises the GaAs resilient coating that is grown on GaAs substrate, is grown in the InGaAsN epitaxial loayer film on GaAs resilient coating.
The InGaAsN films test result that what the present embodiment prepared be grown on GaAs substrate is similar to Example 1, does not repeat them here.
Above-described embodiment is preferably execution mode of the present invention; but embodiments of the present invention are not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present invention and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection scope of the present invention.
Claims (10)
1. be grown in the InGaAsN film on GaAs substrate, it is characterized in that, comprise the GaAs resilient coating that is grown on GaAs substrate, be grown in the InGaAsN epitaxial loayer film on GaAs resilient coating.
2. the InGaAsN film being grown on GaAs substrate according to claim 1, is characterized in that, the thickness of described GaAs resilient coating is 100～150nm.
3. the InGaAsN film being grown on GaAs substrate according to claim 1 and 2, is characterized in that, the thickness of described InGaAsN epitaxial loayer film is 300nm～1 μ m.
4. a preparation method who is grown in the InGaAsN film on GaAs substrate, is characterized in that, comprises the following steps:
(1) clean GaAs substrate;
(2) GaAs substrate is carried out to degasification preliminary treatment;
(3) GaAs substrate is carried out to deoxidize processing;
(4) growth GaAs resilient coating: GaAs underlayer temperature is between 540 DEG C～580 DEG C, and Ga source temperature is 900 DEG C～950 DEG C, and the temperature in As source is 240～270 DEG C, chamber pressure 3 × 10
-5～1 × 10
-6t
orr, V-III line ratio is 20～30, growth rate is 0.7～1.5ML/s, growth GaAs resilient coating;
(5) growth InGaAsN epitaxial loayer film: GaAs underlayer temperature is at 380～440 DEG C, and Ga source temperature is 900 DEG C～950 DEG C, and the temperature in As source is 240～270 DEG C, chamber pressure 2.0～3.0 × 10
-5torr, in the situation that being not counted in N, V-III line ratio is 20～35, the power that produces radio frequency N plasma is 180～200W, N
2flow is 0.1～0.2sccm, the speed of growth 1.0～1.6ML/s, growth InGaAsN epitaxial loayer film.
5. the preparation method who is grown in the InGaAsN film on GaAs substrate according to claim 4, is characterized in that, the described cleaning of step (1) GaAs substrate, is specially:
Ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; GaAs substrate is placed on to H
2sO
4: H
2o
2: H
2o corrodes 1～2 minute in the solution of 3:1:1; Clean and remove oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after cleaning is with drying up through the drying nitrogen filtering.
6. the preparation method who is grown in the InGaAsN film on GaAs substrate according to claim 4, is characterized in that, step (2) is described carries out degasification preliminary treatment to GaAs substrate, is specially:
GaAs substrate after cleaning is sent into the pre-degasification of molecular beam epitaxy Sample Room half an hour; Send into again 300～400 DEG C of transfer chambers degasification 1～1.5 hour, send into growth room after completing degasification.
7. the preparation method who is grown in the InGaAsN film on GaAs substrate according to claim 4, is characterized in that, step (3) is described carries out deoxidize processing to GaAs substrate, is specially:
Under the protection of arsenic line, GaAs underlayer temperature is risen to 600～650 DEG C, high-temperature baking 10～15 minutes.
8. the preparation method who is grown in the InGaAsN film on GaAs substrate according to claim 4, is characterized in that, the thickness of described GaAs resilient coating is 100～150nm.
9. the preparation method who is grown in the InGaAsN film on GaAs substrate according to claim 4, is characterized in that, the thickness of described InGaAsN epitaxial loayer film is 300nm～1 μ m.
10. the preparation method who is grown in the InGaAsN film on GaAs substrate according to claim 4, is characterized in that, the bandwidth of described InGaAsN epitaxial loayer film is 1eV.
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| CN104465843A (en) * | 2014-11-28 | 2015-03-25 | 瑞德兴阳新能源技术有限公司 | Double-sided growth GaAs four-junction solar cell |
| CN111710606A (en) * | 2020-06-30 | 2020-09-25 | 度亘激光技术（苏州）有限公司 | Substrate processing method |
| CN113490998A (en) * | 2018-08-09 | 2021-10-08 | 阵列光子学公司 | Hydrogen diffusion barrier for hybrid semiconductor growth |
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