CN103928363A - 一种硅片晶向检测方法及检测装置 - Google Patents
一种硅片晶向检测方法及检测装置 Download PDFInfo
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- CN103928363A CN103928363A CN201410146800.4A CN201410146800A CN103928363A CN 103928363 A CN103928363 A CN 103928363A CN 201410146800 A CN201410146800 A CN 201410146800A CN 103928363 A CN103928363 A CN 103928363A
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- 239000013078 crystal Substances 0.000 title claims abstract description 159
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 61
- 239000010703 silicon Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000523 sample Substances 0.000 claims abstract description 50
- 239000013598 vector Substances 0.000 claims abstract description 20
- 238000003384 imaging method Methods 0.000 claims description 37
- 238000002310 reflectometry Methods 0.000 claims description 34
- 238000001514 detection method Methods 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/10—Segmentation; Edge detection
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8477—Investigating crystals, e.g. liquid crystals
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10141—Special mode during image acquisition
- G06T2207/10152—Varying illumination
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- G—PHYSICS
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- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Theoretical Computer Science (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Quality & Reliability (AREA)
- Human Computer Interaction (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
<100> | <110> | <111> | <124> | <205> | <113> | <122> |
35.9% | 3.6% | 27.5% | 8.5% | 7.6% | 0.4% | 16.5% |
Claims (16)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410146800.4A CN103928363B (zh) | 2014-04-11 | 2014-04-11 | 一种硅片晶向检测方法及检测装置 |
EP14888648.4A EP3131115B1 (en) | 2014-04-11 | 2014-05-13 | Detection method and detection device for crystal orientation of silicon wafer |
PCT/CN2014/077340 WO2015154326A1 (zh) | 2014-04-11 | 2014-05-13 | 硅片晶向检测方法及检测装置 |
US15/303,386 US9965846B2 (en) | 2014-04-11 | 2014-05-13 | Method and apparatus for detecting crystal orientation of silicon wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410146800.4A CN103928363B (zh) | 2014-04-11 | 2014-04-11 | 一种硅片晶向检测方法及检测装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103928363A true CN103928363A (zh) | 2014-07-16 |
CN103928363B CN103928363B (zh) | 2016-09-07 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN201410146800.4A Active CN103928363B (zh) | 2014-04-11 | 2014-04-11 | 一种硅片晶向检测方法及检测装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9965846B2 (zh) |
EP (1) | EP3131115B1 (zh) |
CN (1) | CN103928363B (zh) |
WO (1) | WO2015154326A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105092583A (zh) * | 2015-08-13 | 2015-11-25 | 中国振华集团永光电子有限公司(国营第八七三厂) | 一种使用普通光源的硅单晶晶向偏离测试装置 |
CN108846394A (zh) * | 2018-07-02 | 2018-11-20 | 百度在线网络技术(北京)有限公司 | 物品信息的采集方法、获取方法和设备 |
CN111037765A (zh) * | 2019-11-28 | 2020-04-21 | 清华大学 | 具有目标晶面表面的钛单晶及其制备方法 |
WO2021027264A1 (zh) * | 2019-08-09 | 2021-02-18 | 大连理工大学 | 一种精确表征晶体三维取向和晶体学取向的方法 |
CN112540454A (zh) * | 2020-11-11 | 2021-03-23 | 中国航发贵州黎阳航空动力有限公司 | 一种晶粒取向成像图获取辅助装置及获取方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018108741A1 (de) * | 2018-04-12 | 2019-10-17 | Klöckner Pentaplast Gmbh | Verfahren für optische Produktauthentifizierung |
CN110033486B (zh) * | 2019-04-19 | 2021-03-16 | 山东大学 | 透明晶体生长过程边缘及体积实时监测方法及*** |
CN112630242B (zh) * | 2020-12-03 | 2023-01-10 | 成都先进金属材料产业技术研究院股份有限公司 | 一种扫描电镜样品导航方法 |
CN113218945A (zh) * | 2021-04-30 | 2021-08-06 | 博众精工科技股份有限公司 | 一种芯片表面检测装置 |
FR3129481B1 (fr) * | 2021-11-19 | 2023-10-27 | Safran | Determination d’une orientation cristallographique d’une surface d’une piece d’un aeronef |
CN115561128B (zh) * | 2022-12-06 | 2023-03-24 | 泉州师范学院 | 实现半导体晶粒两端面非同步成像检测装置与方法 |
Citations (4)
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JP2000031245A (ja) * | 1998-07-08 | 2000-01-28 | Kobe Steel Ltd | ウェーハノッチ位置検出装置 |
US20090059216A1 (en) * | 2007-08-29 | 2009-03-05 | Yukihiro Shibata | Defect inspection method and defect inspection apparatus |
CN103151283A (zh) * | 2013-02-26 | 2013-06-12 | 常州天合光能有限公司 | 一种多晶硅片晶向的检测方法及检测装置 |
WO2013150424A1 (fr) * | 2012-04-02 | 2013-10-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede optique de cartographie de l'orientation cristalline d'un echantillon. |
Family Cites Families (9)
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US5576543A (en) * | 1995-08-21 | 1996-11-19 | Texsem Laboratories, Inc. | Method and apparatus for determining crystallographic characteristics |
DE19609399C2 (de) * | 1996-03-01 | 2002-05-29 | Infineon Technologies Ag | Verfahren zum Bestimmen der Kristallorientierung in einem Wafer |
DE19725535A1 (de) * | 1997-06-17 | 1998-12-24 | Univ Schiller Jena | Verfahren zur Ermittlung der kristallographischen Orientierung von Einkristall-Oberflächen |
JP2001296258A (ja) | 2000-04-12 | 2001-10-26 | Nippon Steel Corp | 結晶方位測定方法 |
US6462339B1 (en) * | 2000-09-20 | 2002-10-08 | Cabot Corporation | Method for quantifying the texture homogeneity of a polycrystalline material |
JP4817350B2 (ja) | 2001-07-19 | 2011-11-16 | 株式会社 東北テクノアーチ | 酸化亜鉛半導体部材の製造方法 |
GB0117892D0 (en) | 2001-07-23 | 2001-09-12 | Oxford Instr Analytical Ltd | Method of analysing crystalline texture |
CN102782803B (zh) * | 2010-01-06 | 2014-10-29 | 聚日(苏州)科技有限公司 | 一种在晶圆上精确定位晶向的方法及其结构 |
CN102680444B (zh) | 2012-05-11 | 2014-12-31 | 常州天合光能有限公司 | 一种多晶硅片晶向测试方法 |
-
2014
- 2014-04-11 CN CN201410146800.4A patent/CN103928363B/zh active Active
- 2014-05-13 WO PCT/CN2014/077340 patent/WO2015154326A1/zh active Application Filing
- 2014-05-13 EP EP14888648.4A patent/EP3131115B1/en active Active
- 2014-05-13 US US15/303,386 patent/US9965846B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031245A (ja) * | 1998-07-08 | 2000-01-28 | Kobe Steel Ltd | ウェーハノッチ位置検出装置 |
US20090059216A1 (en) * | 2007-08-29 | 2009-03-05 | Yukihiro Shibata | Defect inspection method and defect inspection apparatus |
WO2013150424A1 (fr) * | 2012-04-02 | 2013-10-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede optique de cartographie de l'orientation cristalline d'un echantillon. |
CN103151283A (zh) * | 2013-02-26 | 2013-06-12 | 常州天合光能有限公司 | 一种多晶硅片晶向的检测方法及检测装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105092583A (zh) * | 2015-08-13 | 2015-11-25 | 中国振华集团永光电子有限公司(国营第八七三厂) | 一种使用普通光源的硅单晶晶向偏离测试装置 |
CN108846394A (zh) * | 2018-07-02 | 2018-11-20 | 百度在线网络技术(北京)有限公司 | 物品信息的采集方法、获取方法和设备 |
WO2021027264A1 (zh) * | 2019-08-09 | 2021-02-18 | 大连理工大学 | 一种精确表征晶体三维取向和晶体学取向的方法 |
US11815474B2 (en) | 2019-08-09 | 2023-11-14 | Dalian University Of Technology | Method for accurately characterizing crystal three-dimensional orientation and crystallographic orientation |
CN111037765A (zh) * | 2019-11-28 | 2020-04-21 | 清华大学 | 具有目标晶面表面的钛单晶及其制备方法 |
CN112540454A (zh) * | 2020-11-11 | 2021-03-23 | 中国航发贵州黎阳航空动力有限公司 | 一种晶粒取向成像图获取辅助装置及获取方法 |
Also Published As
Publication number | Publication date |
---|---|
US20170039696A1 (en) | 2017-02-09 |
WO2015154326A1 (zh) | 2015-10-15 |
EP3131115B1 (en) | 2020-10-07 |
EP3131115A4 (en) | 2018-02-14 |
EP3131115A1 (en) | 2017-02-15 |
CN103928363B (zh) | 2016-09-07 |
US9965846B2 (en) | 2018-05-08 |
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Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: trina solar Ltd. |
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