CN103915557B - A kind of high power LED lamp using ceramic heat-dissipating - Google Patents
A kind of high power LED lamp using ceramic heat-dissipating Download PDFInfo
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- CN103915557B CN103915557B CN201410159019.0A CN201410159019A CN103915557B CN 103915557 B CN103915557 B CN 103915557B CN 201410159019 A CN201410159019 A CN 201410159019A CN 103915557 B CN103915557 B CN 103915557B
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 11
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- 229910001092 metal group alloy Inorganic materials 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 30
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- 229910052751 metal Inorganic materials 0.000 claims description 29
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
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- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
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- 238000001704 evaporation Methods 0.000 description 4
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- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
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- 229910017083 AlN Inorganic materials 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
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- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000003892 spreading Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410159019.0A CN103915557B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410159019.0A CN103915557B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
CN201210044889.4A CN102593304B (en) | 2012-02-27 | 2012-02-27 | High-power light-emitting diode (LED) light using ceramic for radiating |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210044889.4A Division CN102593304B (en) | 2012-02-27 | 2012-02-27 | High-power light-emitting diode (LED) light using ceramic for radiating |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103915557A CN103915557A (en) | 2014-07-09 |
CN103915557B true CN103915557B (en) | 2016-04-06 |
Family
ID=46481698
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410172746.0A Active CN103943747B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
CN201410157413.0A Active CN103943769B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
CN201410159019.0A Active CN103915557B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
CN201410171549.7A Expired - Fee Related CN104037317B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
CN201210044889.4A Active CN102593304B (en) | 2012-02-27 | 2012-02-27 | High-power light-emitting diode (LED) light using ceramic for radiating |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410172746.0A Active CN103943747B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
CN201410157413.0A Active CN103943769B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410171549.7A Expired - Fee Related CN104037317B (en) | 2012-02-27 | 2012-02-27 | A kind of high power LED lamp using ceramic heat-dissipating |
CN201210044889.4A Active CN102593304B (en) | 2012-02-27 | 2012-02-27 | High-power light-emitting diode (LED) light using ceramic for radiating |
Country Status (1)
Country | Link |
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CN (5) | CN103943747B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943747B (en) * | 2012-02-27 | 2015-12-30 | 义乌市运拓光电科技有限公司 | A kind of high power LED lamp using ceramic heat-dissipating |
CN103915556B (en) * | 2012-02-27 | 2016-06-29 | 俞国宏 | A kind of high power LED lamp using ceramic heat-dissipating |
CN111987210A (en) * | 2015-11-18 | 2020-11-24 | 晶元光电股份有限公司 | Light emitting element |
CN108493306B (en) * | 2018-03-27 | 2020-09-08 | 北京大学 | Preparation method of high-voltage high-power GaN-based LED array chip |
CN111509097B (en) * | 2020-06-30 | 2020-10-20 | 华引芯(武汉)科技有限公司 | High-power semiconductor light-emitting device and preparation method thereof |
CN112384015B (en) * | 2020-11-06 | 2021-07-13 | 浙江大学 | Children mental health growth evaluation instrument |
CN113363369B (en) * | 2021-05-31 | 2022-09-20 | 华中科技大学 | LED quantum dot radiating fin, LED and preparation method thereof |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100568297B1 (en) * | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | Nitride semiconductor light emitting device and manufacturing method thereof |
US7166483B2 (en) * | 2004-06-17 | 2007-01-23 | Tekcore Co., Ltd. | High brightness light-emitting device and manufacturing process of the light-emitting device |
CN100386891C (en) * | 2004-07-02 | 2008-05-07 | 北京工业大学 | High anti-static high efficiency light-emitting diode and producing method |
US8680534B2 (en) * | 2005-01-11 | 2014-03-25 | Semileds Corporation | Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light |
JP2006278751A (en) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | Garium nitride-based semiconductor light emitting element |
WO2006112039A1 (en) * | 2005-04-01 | 2006-10-26 | Matsushita Electric Industrial Co., Ltd. | Surface mounting optical semiconductor device and method for manufacturing same |
CN1897315A (en) * | 2005-07-14 | 2007-01-17 | 桦晶科技股份有限公司 | Light-emitting diodes (LED) packing structure |
CN1901238A (en) * | 2005-07-20 | 2007-01-24 | 桦晶科技股份有限公司 | Package structure of light emitting diode (LED) no lining up |
JP2008135694A (en) * | 2006-10-31 | 2008-06-12 | Hitachi Cable Ltd | Led module |
TWI331413B (en) * | 2007-02-16 | 2010-10-01 | Epistar Corp | Led flip chip package structure and manufacture method thereof |
CN101488539B (en) * | 2008-01-17 | 2010-12-08 | 晶元光电股份有限公司 | Light emitting element |
CN101222015B (en) * | 2008-01-19 | 2010-05-12 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
KR20090103292A (en) * | 2008-03-28 | 2009-10-01 | 서울반도체 주식회사 | Light emitting diode package |
CN201804904U (en) * | 2010-03-15 | 2011-04-20 | 赖哲毅 | High-light and high-efficiency LED |
CN201804913U (en) * | 2010-09-30 | 2011-04-20 | 江阴长电先进封装有限公司 | Wafer-level light emitting diode (LED) packaging structure |
CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
CN202091861U (en) * | 2011-06-10 | 2011-12-28 | 北京中智锦成科技有限公司 | LED light emitting module using ceramic for heat dissipation |
CN102354721A (en) * | 2011-11-04 | 2012-02-15 | 祝进田 | Manufacturing method of LED (light-emitting diode) chip with inverted structure |
CN103943747B (en) * | 2012-02-27 | 2015-12-30 | 义乌市运拓光电科技有限公司 | A kind of high power LED lamp using ceramic heat-dissipating |
CN103915556B (en) * | 2012-02-27 | 2016-06-29 | 俞国宏 | A kind of high power LED lamp using ceramic heat-dissipating |
-
2012
- 2012-02-27 CN CN201410172746.0A patent/CN103943747B/en active Active
- 2012-02-27 CN CN201410157413.0A patent/CN103943769B/en active Active
- 2012-02-27 CN CN201410159019.0A patent/CN103915557B/en active Active
- 2012-02-27 CN CN201410171549.7A patent/CN104037317B/en not_active Expired - Fee Related
- 2012-02-27 CN CN201210044889.4A patent/CN102593304B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103943769A (en) | 2014-07-23 |
CN104037317A (en) | 2014-09-10 |
CN102593304A (en) | 2012-07-18 |
CN103943769B (en) | 2016-04-06 |
CN102593304B (en) | 2014-07-30 |
CN103943747A (en) | 2014-07-23 |
CN103943747B (en) | 2015-12-30 |
CN104037317B (en) | 2016-04-06 |
CN103915557A (en) | 2014-07-09 |
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Effective date of registration: 20200908 Address after: 425000 No. 88 Huancheng East Road, Baiya Town Industrial Zone, Dongan County, Yongzhou City, Hunan Province Patentee after: YONGZHOU FEISITE ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 311115 7th floor, No. 966 Bottle Avenue, Bottle Yao Town, Yuhang District, Hangzhou City, Zhejiang Province Patentee before: Zhongzhong (Hangzhou) Intellectual Property Operations Co.,Ltd. |
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Application publication date: 20140709 Assignee: Yongzhou Xinjingyi Electronic Technology Co.,Ltd. Assignor: YONGZHOU FEISITE ELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2023980048999 Denomination of invention: A high-power LED lighting fixture using ceramic heat dissipation Granted publication date: 20160406 License type: Common License Record date: 20231201 Application publication date: 20140709 Assignee: Hunan Hexu Electronics Co.,Ltd. Assignor: YONGZHOU FEISITE ELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2023980048984 Denomination of invention: A high-power LED lighting fixture using ceramic heat dissipation Granted publication date: 20160406 License type: Common License Record date: 20231201 |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20140709 Assignee: Yongzhou Xinhong Electronic Technology Co.,Ltd. Assignor: YONGZHOU FEISITE ELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2023980048994 Denomination of invention: A high-power LED lighting fixture using ceramic heat dissipation Granted publication date: 20160406 License type: Common License Record date: 20231205 |