CN103050611B - High photosynthetic efficiency white light LED (light-emitting diode) flip chip - Google Patents
High photosynthetic efficiency white light LED (light-emitting diode) flip chip Download PDFInfo
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- CN103050611B CN103050611B CN201210525411.3A CN201210525411A CN103050611B CN 103050611 B CN103050611 B CN 103050611B CN 201210525411 A CN201210525411 A CN 201210525411A CN 103050611 B CN103050611 B CN 103050611B
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Abstract
The invention relates to a high photosynthetic efficiency white light LED (light-emitting diode) flip chip. A layer structure comprises a substrate (1), a buffer layer (2), an N-type layer (3), an N-type distinguishing limit layer (4), a light emitting area layer (5), a P-type distinguishing limit layer (6), a P-type layer (7), a P-type ohmic contact layer (8), a light penetration layer (9), a silicon dioxide layer (10) and a metal layer (11) in sequence, wherein a nono fluorescent powder layer (28) is coated on the surface of the substrate (1). The high photosynthetic efficiency white light LED flip chip is characterized in that the chip is etched into a ladder platform structure in which a ring-shaped N-type electrode and a columnar P-type electrode are formed; the columnar P-type electrode is surrounded by the ring-shaped N-type electrode; soldering tin surfaces connected with the ring-shaped N-type electrode and the columnar P-type electrode as well as a PCB (printed circuit board) are in the same horizontal plane height. With the adoption of the high photosynthetic efficiency white light LED flip chip, as the ring-shaped nano fluorescent powder layer is attached on the substrate through attachment holes, the white light emitted by the chip is brighter and more reliable when the nano fluorescent powder layer is compared with the common fluorescent powder.
Description
Technical field
The present patent application is on 02 1st, 2012 applying date, and application number is: 201210022508.2, and name is called the dividing an application of application for a patent for invention of " a kind of high light efficiency white light LEDs flip-chip ".The present invention relates to a kind of LED chip, especially relate to a kind of high light efficiency white light LEDs flip-chip.
Background technology
Using its advantage of Sapphire Substrate is that chemical stability is good, does not absorb visible ray, moderate cost, manufacturing technology relatively ripe, therefore becomes for the most general substrate of GaN growth.In the encapsulation process of LED, all Sapphire Substrate face is directly fixed on heating panel.In the course of work of LED, its luminous zone is the root of device heating.Because Sapphire Substrate itself is a kind of insulating material, and heat conductivility is more poor than GaN material, thus its operating current of LED device of this formal dress is had to certain restriction, to guarantee luminous efficiency and the working life of LED.For improving the heat dispersion of device, people have designed a kind of LED chip structure, the i.e. LED chip of inverted structure.
In addition, the structure of the GaN chip of traditional Sapphire Substrate, electrode is just positioned at the exiting surface of chip.Due to the limited conductivity of p-GaN layer, therefore require at p-GaN layer surface precipitation one deck the metal level for current spread, this current-diffusion layer is comprised of Ni and Au, the light splitting of meeting absorbent portion, thus reduce light extraction efficiency.If by flip-chip, current-diffusion layer (metallic reflector) just becomes reflection of light layer so, and light can be launched by Sapphire Substrate like this, thereby improves light extraction efficiency.
After proposing the upside-down mounting design of chip, people have carried out a large amount of research and exploration for its feasibility.Due to the limitation of LED chip design, encapsulation yield is always very low, and reason is as follows: the first, N-type electrode zone is relatively little, is difficult to the respective regions contraposition with pcb board; The second, N-type electrode position is high more a lot of than P type electrode position, is easy to cause rosin joint, sealing-off situation; Three, for making N-type electrode, often to remove artificially active area greatly, reduced so widely the light-emitting area of device, directly affected LED luminous efficiency.
Moreover although the luminous efficiency of LED has surpassed fluorescent lamp and incandescent lamp, commercialization LED luminous efficiency is still lower than sodium vapor lamp (150lm/W).So, does which factor affect the luminous efficiency of LED? with regard to white light LEDs, its encapsulation finished product luminous efficiency is by internal quantum efficiency, electric injection efficiency, and the product of extraction efficiency and packaging efficiency determines.As shown in figure 34, utilize MOCVD, VPE, MBE or LPE technology growth of device (as LED, LD etc.) structure on substrate 30, respectively be from top to bottom substrate 30, n type material layer 31, luminous zone 32, P-type material layer 33, P type electrode 34, P level soldering-tin layer 35, pcb board 36 and heating panel 40.Wherein between n type material layer 31 and heating panel 40, be also connected successively N-type electrode 37, N level soldering-tin layer 38 and pcb board 39.
The technological deficiency that this traditional LED flip-chip exists is as follows:
1, N-type electrode 37 present positions and P type electrode 34 apart from each others in the horizontal direction, N-type electrode 37 has harsh requirement to the Position Design of the pcb board 39 of its below, has influence on encapsulation acceptance rate.
2, N-type electrode 37 positions are more a lot of than P type electrode 34 positions, cause the gap between the pcb board 39 of itself and below larger, are easy to make N level soldering-tin layer 38 long and cause the generation of rosin joint or sealing-off when scolding tin.
3, for N-type electrode 37 and the pcb board 39 of its below can be welded, need to remove luminous zone greatly, have influence on the luminous efficiency of LED chip.
4, electrode zone is large not, affects Injection Current efficiency and then has influence on the luminous efficiency of LED chip.
5, P type electrode and N-type electrode position, in chip both sides, cause electronics flow path to differ, and as Figure 35, form resistance inhomogeneous, and chip light emitting district non-uniform light has influence on the luminous efficiency of LED chip.
Summary of the invention
The present invention has designed a kind of high light efficiency white light LEDs flip-chip, and it has solved following technical problem and is:
(1) N-type electrode district is relative little with P type electrode district, is difficult to the respective regions contraposition with pcb board, can have influence on the acceptance rate of packaging effect and LED product;
(2) N-type electrode position is high more a lot of than P type electrode position, is easy to cause rosin joint, sealing-off situation;
(3) for making N-type electrode, often to remove artificially active area greatly, reduced so widely the light-emitting area of device, directly affected LED luminous efficiency;
(4) P type electrode and N-type electrode zone are large not, affect Injection Current, have directly affected LED chip luminous efficiency;
(5) P type electrode and N-type electrode position, in chip both sides, cause electronics flow path to differ, and form resistance inhomogeneous, and chip light emitting district non-uniform light has influence on the luminous efficiency of LED chip.
In order to solve the technical problem of above-mentioned existence, the present invention has adopted following scheme:
A kind of high light efficiency white light LEDs flip-chip, its layer of structure comprises substrate (1) successively, resilient coating (2), N-type layer (3), N-type is limiting layer (4) respectively, luminous zone layer (5), P type is limiting layer (6) respectively, P type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10), metal level (11), at substrate (1) surface coating one deck nano fluorescent bisque (28), it is characterized in that: this chip is etched into halfpace structure and forms cyclic n nitroso compound type electrode and cylindricality P type electrode, cylindricality P type electrode is by cyclic n nitroso compound type electrodes surrounding, the solder side that described cyclic n nitroso compound type electrode is connected with pcb board with described cylindricality P type electrode is in same level height.
Further, N-type electrode mainly comprises N-type electrode light penetrated bed ito thin film (191) and N-type electrode metal alloy-layer (23), wherein N-type electrode light penetrated bed ito thin film (191) is hierarchic structure, and hierarchic structure bottom is connected with N-type layer (3) exposed region of chip both sides; Hierarchic structure top is connected with N-type electrode metal alloy-layer (23), metal level (11) and dielectric insulating film (16), wherein N-type electrode metal alloy-layer (23) is positioned at the top on hierarchic structure top, and metal level (11) and dielectric insulating film (16) are positioned at the below on hierarchic structure top; P type electrode mainly comprises P type electrode metal alloy-layer (24) and P type electrode light penetrated bed ito thin film (192), P type electrode light penetrated bed ito thin film (192) top is connected with P type electrode metal alloy-layer (24), and P type electrode light penetrated bed ito thin film (192) surrounding extends downward light penetrated bed (9) and metal level (11) and silicon dioxide layer (10) are limited to wherein;
N-type electrode metal alloy-layer (23) is positioned at same level with P type electrode metal alloy-layer (24).
Further, described dielectric insulating film (16) parallels with mid portion and the bottom of hierarchic structure, plays the effect of isolation N-type electrode light penetrated bed ito thin film (191).
Further, in described substrate (1), form one deck male and fomale(M&F) (12).
Further, described substrate (1) passes through male and fomale(M&F) (12) structural transition with described resilient coating (2).
Further, described cyclic n nitroso compound type electrode and the described P type electrode pcb board by is separately connected with radiator structure (26).
Further, at described substrate (1), above by etching, form a plurality of attachment hole (27), nano fluorescent bisque (28) sticks to described substrate (1) surface by described a plurality of attachment hole (27).
This high light efficiency white light LEDs flip-chip is compared with common white light LEDs flip-chip, has following beneficial effect:
(1) the present invention owing to adhering to one deck circular nano phosphor powder layer by attachment hole on substrate, and this nano fluorescent bisque is compared with common fluorescent material, can be so that the white light that chip sends is more bright reliable.
(2) the present invention is due to silicon dioxide layer and the metal level of P type electrode below are wrapped up completely by P type electrode light penetrated bed ito thin film, increased P type electrode light penetrated bed ito thin film exposed area, thereby also just increased light penetrated bed area, improved LED luminous efficiency.
(3) the present invention, because chip structure comprises N-type electrode and P type electrode, makes P electrode and N electrode layer area maximum, obtains maximum Injection Current, improving luminous efficiency.
(4) the present invention, because N-type electrode has adopted hierarchic structure, only requires and removes very little a part of active area, has guaranteed the maximization of reflection layer area, obtains optimal luminescent efficiency.
(5) the present invention, owing to adopting annular N-type electrode layer to surround cylindricality P type electrode layer, can realize the most uniform electric current, makes luminous zone the most even.
(6) the present invention is also because N-type electrode layer and P type electrode layer are in same plane, and encapsulation acceptance rate is higher.
Accompanying drawing explanation
Fig. 1: LED chip manufacturing process steps 1 schematic diagram in the present invention;
Fig. 2: LED chip manufacturing process steps 2 schematic diagrames in the present invention;
Fig. 3: LED chip manufacturing process steps 3 schematic diagrames in the present invention;
Fig. 4: LED chip manufacturing process steps 4 schematic diagrames in the present invention;
Fig. 5: LED chip manufacturing process steps 5 schematic diagrames in the present invention;
Fig. 6: LED chip manufacturing process steps 6 schematic diagrames in the present invention;
Fig. 7: LED chip manufacturing process steps 7 schematic diagrames in the present invention;
Fig. 8: LED chip manufacturing process steps 8 schematic diagrames in the present invention;
Fig. 9: LED chip manufacturing process steps 9 schematic diagrames in the present invention;
Figure 10: LED chip manufacturing process steps 10 schematic diagrames in the present invention;
Figure 11: LED chip manufacturing process steps 11 schematic diagrames in the present invention;
Figure 12: LED chip manufacturing process steps 12 schematic diagrames in the present invention;
Figure 13: LED chip manufacturing process steps 13 schematic diagrames in the present invention;
Figure 14: LED chip manufacturing process steps 14 schematic diagrames in the present invention;
Figure 15: LED chip manufacturing process steps 15 schematic diagrames in the present invention;
Figure 16: LED chip manufacturing process steps 16 schematic diagrames in the present invention;
Figure 17: LED chip manufacturing process steps 17 schematic diagrames in the present invention;
Figure 18: LED chip manufacturing process steps 18 schematic diagrames in the present invention;
Figure 19: LED chip manufacturing process steps 19 schematic diagrames in the present invention;
Figure 20: LED chip manufacturing process steps 20 schematic diagrames in the present invention;
Figure 21: LED chip manufacturing process steps 21 schematic diagrames in the present invention;
Figure 22: LED chip manufacturing process steps 22 schematic diagrames in the present invention;
Figure 23: LED chip manufacturing process steps 23 schematic diagrames in the present invention;
Figure 24: LED chip manufacturing process steps 24 schematic diagrames in the present invention;
Figure 25: LED chip manufacturing process steps 25 schematic diagrames in the present invention;
Figure 26: LED chip manufacturing process steps 26 schematic diagrames in the present invention;
Figure 27: LED chip manufacturing process steps 27 schematic diagrames in the present invention;
Figure 28: LED chip manufacturing process steps 28 schematic diagrames in the present invention;
Figure 29: LED chip manufacturing process steps 29 schematic diagrames in the present invention;
Figure 30: the high light efficiency white light LEDs of the present invention flip chip structure schematic diagram;
The vertical view of Figure 31: Figure 30;
Figure 32: light reflection hint effect figure in Figure 28;
Figure 33: the present invention's high light efficiency white light LEDs flip-chip and radiator structure connection diagram;
Figure 34: LED chip structural representation in prior art;
Figure 35: in Figure 34, electron stream is to schematic diagram.
Description of reference numerals:
1-substrate; 2-resilient coating; 3-N-type layer; 4-N-type is limiting layer respectively; 5-luminous zone layer; 6-P type is limiting layer respectively; 7-P type layer; 8-P type ohmic contact layer; 9-light penetrated bed; 10-silicon dioxide layer; 11-metal level; 12-male and fomale(M&F); The 13-the first photoresist layer; The 14-the second photoresist layer; The 15-the three photoresist layer; 16-dielectric insulating film; The 17-the four photoresist layer; The 18-the five photoresist layer; 19-light penetrated bed ito thin film; 191-N-type electrode light penetrated bed ito thin film; 192-P type electrode light penetrated bed ito thin film; The 20-the six photoresist layer; 21-metal alloy layer; The 22-the seven photoresist layer; 23-N-type electrode metal alloy-layer; 24-P type electrode metal alloy-layer; 25-pcb board; 26-radiator structure; 27-attachment hole; 28-nano fluorescent bisque;
30-substrate; 31-n type material layer; 32-luminous zone; 33-P-type material layer; 34-P type electrode; 35-P level soldering-tin layer; 36-pcb board; 37-N-type electrode; 38-N level soldering-tin layer; 39-pcb board; 40-heating panel.
Embodiment
Below in conjunction with Fig. 1 to Figure 33, the present invention will be further described:
As shown in Figure 1, substrate 1 is carrier, is generally the materials such as sapphire, carborundum, silicon, GaAs, AlN, ZnO or GaN.
On substrate 1, first with etching, form one deck male and fomale(M&F) 12, this male and fomale(M&F) 12 can reduce the total reflection of light in chip, increases light emission rate.
LED consists of pn knot, resilient coating 2,3 layers, N-type layer, N-type respectively limiting layer 4, P type limiting layer 6 and P type layer 7 are to make required P and the n type material of LED in order to form respectively.Luminous zone layer 5 is luminous zones of LED, and the color of light is determined by the material of active area.
P type ohmic contact layer 8 is last one decks of Material growth, and the charge carrier doping concentration of this one deck is higher, and object is for making less ohmic contact resistance.
P type metal ohmic contact layer is not formed by growth, but form by methods such as evaporation or sputters, one of object is to make the electrode of device, two of object is to use for packaging and routing.
Again by evaporation, sputter or other film manufacturing method, on P type ohmic contact layer 8 surfaces, form one deck ito thin film, for making the light penetrated bed 9 of light-emitting diode, ito thin film is generally tin indium oxide material, be a kind of transparent semiconductor conductive film, generally can make the light extraction efficiency of LED improve 20%-30%.Again by evaporation, sputter or other film manufacturing method, at light penetrated bed 9, form the completely reflecting mirror of silicon dioxide layer 10 and metal level 11 sandwich constructions, silicon dioxide layer 10 can improve the current expansion of luminous zone, reduce electric current pile-up effect, and metal level 11 can reduce the absorption of P electrode pair light as speculum, increase the extraction of Sapphire Substrate marginal ray, and can be as the heat-conducting plate of chip; Metal on demand can aluminium, silver or the material such as golden.
As shown in Figure 2, the metal level 11 surface-coated positive glue of the first photoresist layer 13(or negative glue in Fig. 1 structure), coating speed is at 2500-5000 rev/min, and between coating temperature is controlled to 90 degrees Celsius-100 degrees Celsius, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in Figure 3, the first photoresist layer 13 of LED flip-chip periphery is removed by exposure or visualization way, and forms endless metal layer exposed region.
As shown in Figure 4, utilize dry quarter or the method for chemical corrosion, by the N-type of expose portion respectively limiting layer 4, luminous zone layer 5, P type respectively the N-type layer 3 of limiting layer 6, P type layer 7, P type ohmic contact layer 8, light penetrated bed 9, silicon dioxide layer 10, metal level 11 and part remove and make whole LED chip form halfpace structure.
As shown in Figure 5, the first photoresist layer 13 of LED chip intermediate rest is all removed.
As shown in Figure 6, the surface-coated positive glue of the second photoresist layer 14(or negative glue in Fig. 5 structure), coating speed is at 2500-5000 rev/min, and between coating temperature is controlled to 90 degrees Celsius-100 degrees Celsius, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in Figure 7, structural part the second photoresist layer 14 of LED flip-chip halfpace is removed by exposure or visualization way, and formed endless metal layer exposed region.
As shown in Figure 8, utilize the method for dry quarter or chemical corrosion, the metal level of expose portion 11 and silicon dioxide layer 10 are removed, form annular groove.
As shown in Figure 9, remaining the second photoresist layer 14 of LED flip-chip is all removed.
As shown in figure 10, the surface-coated positive glue of the 3rd photoresist layer 15(or the negative glue of gained LED chip structure in Fig. 9), coating speed is at 2500-5000 rev/min, and between coating temperature is controlled to 90 degrees Celsius-100 degrees Celsius, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 11, the 3rd photoresist layer 15 on LED chip surface is partly removed by exposure or visualization way, formed halfpace outer wall exposed region and on halfpace, form annular exposed region.
As shown in figure 12, utilize PECVD or other coating technique, at the body structure surface shown in Figure 11, directly prepare one deck dielectric insulating film 16, dielectric insulating film 16 materials are silicon dioxide layer or the good dielectric of other light transmission, and thickness is between 100nm-500nm.The mode of dielectric insulating film 16 by plated film covers on the LED chip of hierarchic structure and the 3rd photoresist layer 15 surfaces equably.
As shown in figure 13, at the LED of Figure 12 body structure surface coating positive glue of the 4th photoresist layer 17(or negative glue), coating speed is at 2500-5000 rev/min, and between coating temperature is controlled to 90 degrees Celsius-100 degrees Celsius, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 14, the 4th photoresist layer 17 on LED chip surface is partly removed by exposure or visualization way, only retained the 4th photoresist layer 17 of halfpace outer wall vertical coating.
As shown in figure 15, utilize the method for dry quarter or chemical corrosion, remove portion dielectric insulating film 16, only retain the dielectric insulating film 16 in annular groove on dielectric insulating film 16 that halfpace outer wall vertical arranges and halfpace, the dielectric insulating film 16 on halfpace in annular groove highly equals the thickness of metal level 11 and silicon dioxide layer 10.
As shown in figure 16, remaining the 3rd photoresist layer 15 of LED chip and the 4th photoresist layer 17 are all removed.
As shown in figure 17, the surface-coated positive glue of the 5th photoresist layer 18(or negative glue at Figure 16 chip structure), coating speed is at 2500-5000 rev/min, and between coating temperature is controlled to 90 degrees Celsius-100 degrees Celsius, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 18, the 5th photoresist layer 18 of LED chip annular groove top is partly removed by exposure or visualization way, and formed annular dielectric insulating film exposed region.
As shown in figure 19, utilize the method for dry quarter or chemical corrosion, chip top is removed completely by the dielectric insulating film 16 of exposed at both sides part.
As shown in figure 20, remaining the 5th photoresist layer 18 of LED chip is all removed.
As shown in figure 21, then pass through evaporation, sputter or other film manufacturing method, on Figure 20 chip structure, form one deck light penetrated bed ito thin film 19, for making light penetrated bed and the conduction of light-emitting diode.
As shown in figure 22, the surface-coated positive glue of the 6th photoresist layer 20(or negative glue at Figure 21 chip structure), coating speed is at 2500-5000 rev/min, and between coating temperature is controlled to 90 degrees Celsius-100 degrees Celsius, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 23, the 6th photoresist layer 20 at LED chip halfpace top is partly removed by exposure or visualization way, and formed light penetrated bed ito thin film exposed region.
As shown in figure 24, utilize PECVD or other coating technique, at the chip structure surface preparation layer of metal alloy-layer 21 shown in Figure 23.
As shown in figure 25, the surface-coated positive glue of the 7th photoresist layer 22(or negative glue in Figure 24 structure), coating speed is at 2500-5000 rev/min, and between coating temperature is controlled to 90 degrees Celsius-100 degrees Celsius, in baking oven or iron plate surface baking, baking time is respectively 30 minutes and 2 minutes.
As shown in figure 26, LED chip top is partly removed by exposure or visualization way by the 7th photoresist layer 22 of both side surface, at flip-chip halfpace top, retain ring-type and the 7th square photoresist layer 22.And the endless metal alloy-layer exposed region on formation halfpace below and halfpace.In Figure 26, can find out, the 7th remaining photoresist layer 22 is divided into two parts, all be positioned on the step of LED chip, the metal alloy layer exposed region between the 7th photoresist layer 22 of ring-type and the 7th square photoresist layer 22 is isolated for P type electrode and two N-type electrodes.
As shown in figure 27, utilize the method for dry quarter or chemical corrosion, remove the metal alloy layer 21 not covered by the 7th photoresist layer 22, also remove silicon dioxide layer 10, metal level 11 and the light penetrated bed ito thin film 19 between ring-type the 7th photoresist layer 22 and square the 7th photoresist layer 22 simultaneously.Original smooth penetrated bed ito thin film 19 will be divided into N-type electrode light penetrated bed ito thin film 191 and P type electrode light penetrated bed ito thin film 192.
As shown in figure 28, remaining the 6th photoresist layer 20 of LED chip and the 7th photoresist layer 22 are all removed, and formed cyclic n nitroso compound type electrode and a P type electrode, P type electrode is by cyclic n nitroso compound type electrodes surrounding.
As shown in figure 29, in order further to improve the luminous efficiency of LED chip, utilize ICP, RIE or other lithographic technique to carry out etching to substrate 1, and form a plurality of attachment hole 27.
As shown in figure 30, utilize glue spreading method that the nano-phosphor liquid preparing is coated on to substrate 1 surface equably.Then in the baking oven of 100-180 degree Celsius, toast, the time is 10 minutes-1 hour, finally on substrate 1 surface, forms the uniform nano fluorescent bisque 28 of one deck.
Till the LED chip in Figure 30, the main making step of the high light efficiency white light LEDs of the present invention flip-chip completes.
This N-type electrode of inventing high light efficiency white light LEDs flip-chip mainly comprises N-type electrode light penetrated bed ito thin film 191 and N-type electrode metal alloy-layer 23, wherein N-type electrode light penetrated bed ito thin film 191 is hierarchic structure, and hierarchic structure bottom is connected with N-type layer 3 exposed region of chip both sides; Hierarchic structure top is connected with N-type electrode metal alloy-layer 23, metal level 11 and dielectric insulating film 16, and wherein N-type electrode metal alloy-layer 23 is positioned at the top on hierarchic structure top, and metal level 11 and dielectric insulating film 16 are positioned at the below on hierarchic structure top.
The P type electrode of LED chip mainly comprises P type electrode metal alloy-layer 24 and P type electrode light penetrated bed ito thin film 192, P type electrode light penetrated bed ito thin film 192 tops are connected with P type electrode metal alloy-layer 24, and P type electrode light penetrated bed ito thin film 192 surroundings extend downward light penetrated bed 9 and metal level 11 and silicon dioxide layer 10 are limited to wherein; N-type electrode metal alloy-layer 23 is positioned at same level with P type electrode metal alloy-layer 24.
In addition, can find out and comprise through large-area metal level 11, N-type electrode metal alloy-layer 23 and P type electrode metal alloy-layer 24, also can reach heat radiation maximum area.
As shown in figure 31, N-type electrodes surrounding P type electrode, reaches uniform current, and makes luminous zone and illumination effect reach the most uniform perfect condition.
Shown in figure 32, from chip top and both sides four sides bright dipping and metal level 11 reflections, can greatly promote chip light emitting efficiency.
As shown in figure 33, two N-type electrode metal alloy-layers 23 are connected with radiator structure 26 by pcb board 25 respectively with P type electrode metal alloy-layer 24.Because two N-type electrode metal alloy-layers 23 and P type electrode metal alloy-layer 24 positions are in same level, while making they and pcb board 25 soldering, the thickness of soldering layer can effectively be controlled, and avoids rosin joint or sealing-off.
By reference to the accompanying drawings the present invention has been carried out to exemplary description above; obvious realization of the present invention is not subject to the restrictions described above; as long as the various improvement that adopted method design of the present invention and technical scheme to carry out; or without improving, design of the present invention and technical scheme are directly applied to other occasion, all in protection scope of the present invention.
Claims (2)
1. one kind high light efficiency white light LEDs flip-chip, its layer of structure comprises substrate (1) successively, resilient coating (2), N-type layer (3), N-type is limiting layer (4) respectively, luminous zone layer (5), P type is limiting layer (6) respectively, P type layer (7), P type ohmic contact layer (8), light penetrated bed (9), silicon dioxide layer (10), metal level (11), at substrate (1) lower surface coating one deck nano fluorescent bisque (28), it is characterized in that: this chip is etched into halfpace structure and forms cyclic n nitroso compound type electrode and cylindricality P type electrode, cylindricality P type electrode is by cyclic n nitroso compound type electrodes surrounding, the solder side that described cyclic n nitroso compound type electrode is connected with pcb board with described cylindricality P type electrode is in same level height, N-type electrode comprises N-type electrode light penetrated bed ito thin film (191) and N-type electrode metal alloy-layer (23), and wherein N-type electrode light penetrated bed ito thin film (191) is hierarchic structure, and hierarchic structure bottom is connected with N-type layer (3) exposed region of chip, hierarchic structure top is connected with N-type electrode metal alloy-layer (23), metal level (11) and dielectric insulating film (16), wherein N-type electrode metal alloy-layer (23) is positioned at the top on hierarchic structure top, and metal level (11) and dielectric insulating film (16) are positioned at the below on hierarchic structure top, P type electrode comprises P type electrode metal alloy-layer (24) and P type electrode light penetrated bed ito thin film (192), P type electrode light penetrated bed ito thin film (192) top is connected with P type electrode metal alloy-layer (24), and P type electrode light penetrated bed ito thin film (192) surrounding extends downward light penetrated bed (9) and the metal level of below (11) and silicon dioxide layer (10) are limited to wherein, N-type electrode metal alloy-layer (23) is positioned at same level with P type electrode metal alloy-layer (24), described dielectric insulating film (16) parallels with mid portion and the bottom of hierarchic structure, plays the effect of isolation N-type electrode light penetrated bed ito thin film (191), described cyclic n nitroso compound type electrode and described P type electrode are connected with radiator structure (26) by pcb board separately.
2. high light efficiency white light LEDs flip-chip according to claim 1, it is characterized in that: at described substrate (1), above by etching, form a plurality of attachment hole (27), nano fluorescent bisque (28) sticks to described substrate (1) surface by described a plurality of attachment hole (27).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006237071A (en) * | 2005-02-22 | 2006-09-07 | Toyoda Gosei Co Ltd | Light-emitting device and display apparatus employing the same |
| CN101222015A (en) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN201864770U (en) * | 2010-11-22 | 2011-06-15 | 江苏淘镜有限公司 | Evaporation crucible for electron gun |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006237071A (en) * | 2005-02-22 | 2006-09-07 | Toyoda Gosei Co Ltd | Light-emitting device and display apparatus employing the same |
| CN101222015A (en) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN201864770U (en) * | 2010-11-22 | 2011-06-15 | 江苏淘镜有限公司 | Evaporation crucible for electron gun |
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