CN103890596B - Distribution inspection method and distribution testing fixture - Google Patents
Distribution inspection method and distribution testing fixture Download PDFInfo
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- CN103890596B CN103890596B CN201280052749.XA CN201280052749A CN103890596B CN 103890596 B CN103890596 B CN 103890596B CN 201280052749 A CN201280052749 A CN 201280052749A CN 103890596 B CN103890596 B CN 103890596B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
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- Computer Vision & Pattern Recognition (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
Abstract
The present invention checks that the distribution being formed at substrate is with or without the distribution inspection method of circuit defect portion (20), comprising: heating operation (S3 ~ S6), applies voltage to distribution and circuit defect portion (20) is generated heat; Image obtains operation (S2 ~ S5), and shooting substrate obtains infrared view separately of multiple moment; Heating region identification operation (S8), uses the infrared view in regulation moment to identify heating region (21); Heating region judges operation (S9), and can judgement determine the position of circuit defect portion (20) according to heating region (21); And defective locations determination operation (S10), the position of circuit defect portion (20) is determined according to heating region (21), and, when judging the position being judged as in operation determining circuit defect portion (20) at heating region, heating region identification operation uses the infrared view in other moment different from the regulation moment to identify heating region (21).
Description
Technical field
The present invention relates to and be applicable at such as liquid crystal indicator, organic EL display active-matrix substrate used or the distribution inspection method and the distribution testing fixture that are formed with the circuit defect detecting distribution in the substrate of multiple distribution as solar cell panel etc.
Background technology
In general, active-matrix substrate or the substrate that is formed with multiple distribution are used to liquid crystal indicator, various product scope such as organic EL (ElectroLuminescence: electroluminescence) display device, solar cell panel etc.Such as, liquid crystal indicator has as the active-matrix substrate of the side's substrate component being formed with multiple distribution, pictorial element electrode and on-off element etc. and as the colored filter substrate of the opposing party's substrate component being formed with comparative electrode, colored filter.By above-mentioned 2 substrate laminatings spaced apart, in gap, inject liquid crystal material to after forming liquid crystal layer, peripheral circuit parts are installed and manufacture liquid crystal indicator.
Active-matrix substrate, in its manufacturing process, produces the defect such as broken string, short circuit of the distribution on substrate sometimes.This defect is the reason of the display defect of liquid crystal indicator.Defective in order to reduce the display defect of liquid crystal indicator etc., before the operation of above-mentioned injection liquid crystal material, need to detect the defect of active-matrix substrate and repair.
Fig. 8 is the testing fixture of Wiring pattern disclosed in patent documentation 1.The testing fixture of patent documentation 1 utilizes powered electrode 61 to be energized to the Wiring pattern 53 be formed on substrate 50, infrared ray is produced by the heating of Wiring pattern 53, its infrared view is taken with infrared ray sensor 63, image procossing is carried out to shooting signal, contrast with the reference image data of regulation, check that whether Wiring pattern 53 is qualified thus.Such as, in the A portion of Fig. 8, there is broken string and not circulating current in distribution, the distribution 53 therefore comprising A portion does not generate heat.In addition, in the B portion of Fig. 8, distribution is short-circuited, and in short also circulating current, therefore also can produce infrared ray from the part beyond distribution 53.
In addition, Fig. 9 is the testing fixture of active-matrix substrate disclosed in patent documentation 2.The testing fixture of patent documentation 2 detects the circuit defect 73 produced at the sweep trace 81 ~ 85 of active-matrix substrate and the point of crossing of signal wire 91 ~ 95.
Insulated between the sweep trace 81 ~ 85 of active-matrix substrate and signal wire 91 ~ 95, if normally, even if then also can not circulating current to applying voltage between sweep trace 81 ~ 85 and signal wire 91 ~ 95.And such as when there is circuit defect 73 between sweep trace 83 and signal wire 93, by circuit defect 73 circulating current between sweep trace 83 and signal wire 93, producing heating and releasing infrared ray.
Therefore, apply voltage between sweep trace 81 ~ 85 and signal wire 91 ~ 95, shooting infrared view, it is qualified to differentiate according to the presence or absence of the presence or absence detection circuit defect of heating region, or detects the position of circuit defect 73.
prior art document
patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication " Unexamined Patent 11-337454 publication "
Patent documentation 2: Japanese Unexamined Patent Publication " Unexamined Patent 6-51011 publication "
Summary of the invention
the problem that invention will solve
But according to patent documentation 1, the disclosed inspection method adopting existing infrared view of patent documentation 2, when circulating current and adstante febre in distribution and circuit defect portion, due to heat transfer, also temperature can rise and produce infrared ray in region in its vicinity.Therefore, can according to the position in heating region determination circuit defect portion when distribution number is fewer, but in the substrate of as many in distribution number so high-resolution LCD TV etc., the fine and close formation of distribution, also normal distribution, distribution cross part etc. can be comprised together with circuit defect portion in the heating region detected, circuit defect portion is overshadowed in heating region, therefore according to existing inspection, there is the problem cannot determining the position in circuit defect portion exactly.
The object of the invention is to, take multiple infrared view, extract and be suitable for the image determining defective locations, determine the position in circuit defect portion exactly.
for the scheme of dealing with problems
Distribution inspection method of the present invention checks that the distribution being formed at substrate is with or without the distribution inspection method in circuit defect portion, is characterized in that, comprising: heating operation, applies voltage to distribution and circuit defect portion is generated heat; Image obtains operation, and shooting substrate obtains infrared view separately of multiple moment; Heating region identification operation, uses the infrared view in the moment preset to identify heating region; Heating region judges operation, and can judge according to the position in heating region determination circuit defect portion; And defective locations determination operation, according to the position in heating region determination circuit defect portion, and, when judging the position being judged as in operation determining circuit defect portion at heating region, heating region identification operation uses the infrared view in other moment different from the moment preset to identify heating region.
In addition, it is characterized in that, heating region judges that operation calculates the characteristic quantity of size evaluating heating region, when in the scope that characteristic quantity is in regulation, is judged as the position determining circuit defect portion.
In addition, it is characterized in that, characteristic quantity correspond to the area that calculates according to heating region or in the heating width of distribution that calculates according to heating region at least any one.
In addition, it is characterized in that, when characteristic quantity is less than the scope of regulation, heating region identification operation uses the infrared view in the moment more late than the moment preset.
In addition, it is characterized in that, when characteristic quantity is larger than the scope of regulation, heating region identification operation uses the infrared view in the moment more Zao than the moment preset.
In addition, it is characterized in that there is the resistance measurement operation of the resistance value measuring distribution, change the moment preset and other moment of infrared view according to resistance value.
Distribution testing fixture of the present invention checks that the distribution being formed at substrate is with or without the distribution testing fixture in circuit defect portion, is characterized in that, comprising: heat-generating units, and it applies voltage to distribution makes circuit defect portion generate heat; Image acquisition unit, its shooting substrate obtains infrared view separately of multiple moment; Heating region recognition unit, it uses the infrared view in the moment preset to identify heating region; Heating region judging unit, can its judgement according to the position in heating region determination circuit defect portion; And defective locations determining unit, it is according to the position in heating region determination circuit defect portion, and, when being judged as the position cannot determining circuit defect portion in heating region judging unit, heating region recognition unit uses the infrared view in other moment different from the moment preset to identify heating region.
In addition, it is characterized in that possessing the resistance measurement unit of the resistance value measuring distribution, change the moment preset and other moment of infrared view according to measured resistance value.
Distribution scrutiny program of the present invention is the distribution scrutiny program performing above-mentioned distribution inspection method, it is characterized in that, makes computing machine play the function of above-mentioned each operation.
The feature of program recorded medium of the present invention is, records the above-mentioned distribution scrutiny program of embodied on computer readable.
invention effect
According to the present invention, can multiple infrared view be taken, extract and be suitable for the image determining defective locations, determine the position in circuit defect portion exactly.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the distribution testing fixture that embodiments of the present invention are shown.
Fig. 2 is the block diagram of the formation of distribution testing fixture for illustration of embodiments of the present invention.
Fig. 3 is the check process figure of the distribution inspection method that embodiments of the present invention are shown.
Fig. 4 is the figure preserving the image table of the infrared view in per moment illustrated involved by embodiments of the present invention.
Fig. 5 is the figure that the infrared view overlap in the per moment made involved by embodiments of the present invention represents.
Fig. 6 is the schematic diagram that the image after by the infrared view binaryzation in the per moment involved by embodiments of the present invention is shown.
Fig. 7 is that involved according to the embodiment of the present invention binary image is to determine the key diagram of circuit defect position.
Fig. 8 is the figure of the testing fixture for illustration of prior art.
Fig. 9 is the figure of the testing fixture for illustration of prior art.
Embodiment
Below, embodiments of the present invention are described in detail referring to figs. 1 through the accompanying drawing shown in Fig. 7.In addition, in accompanying drawing of the present invention, identical Reference numeral represents identical part or considerable part.
(embodiment 1)
Fig. 1 is the schematic diagram of the distribution testing fixture 1 of an embodiment of the invention.Distribution testing fixture 1 comprises signal providing unit 2, infrared ray dynamic image shoot part 3, image processing part 4 and central control 5.The substrate component 14 checked is placed in mounting table 15, is placed with connecting portion 6 thereon.The multiple probes (contact pin) realizing with the portion of terminal of the distribution of substrate component 14 conducting are provided with in the bottom surface of connecting portion 6.By connecting portion 6, voltage is applied from signal providing unit 2 to substrate component 14, and utilizes infrared ray dynamic image shoot part 3 to take the infrared view on surface in the mode of dynamic image.
Fig. 2 is the figure of the formation for illustration of distribution testing fixture 1.Distribution testing fixture 1 utilizes central control 5 control signal providing unit 2, infrared ray dynamic image shoot part 3, image processing part 4, detects the defects such as the short circuit produced in the distribution of substrate component 14, determines the position of this defect.
Signal providing unit 2 has connecting portion 6, the voltage application portion 7 be connected with connecting portion 6 and resistance measurement portion 8.Voltage application portion 7 is the power supplys being applied fixing voltage by the distribution of connecting portion 6 pairs of substrate components 14.In addition, in the present embodiment, to adopt the electrifying method of the such constant voltage source of voltage application portion 7 to be described, but the electrifying method that make use of constant current source also can be adopted to generate heat to make circuit defect portion.
Resistance measurement portion 8 is the analyzers of the resistance value being measured the distribution of substrate component 14 by connecting portion 6.Signal providing unit 2 is based on the applying voltage of the resistance value adjustment voltage application portion 7 of the distribution measured, but when doping resistance value as the substrate component 14 of same size in advance, do not need to arrange resistance measurement portion 8 in distribution testing fixture 1, applying voltage can not be adjusted.
Infrared ray dynamic image shoot part 3 has infrared image shoot part 9 and infrared image storage part 10.Infrared image shoot part 9 is such as infrared camera, catches from the infrared ray of the surface emissivity of substrate component 14 to form infrared view.Such as be sent to computing machine with the infrared view that infrared image shoot part 9 is taken, carry out analog/digital conversion as required, be supplied to infrared image storage part 10.Infrared image storage part 10 is the memory storages by being stored in image table by multiple infrared views that per moment takes with infrared image shoot part 9.In addition, in the present embodiment, describe and infrared view is carried out the situation of taking as dynamic image, but the present invention is not limited thereto, infrared view can be the rest image of dynamic image or temporally sequence shooting.
Image processing part 4 has heating region identification part 11, heating region judging part 12 and defective locations determination portion 13.The infrared view identification heating region in heating region identification part 11 moment according to the rules, such as, carries out binary conversion treatment with the threshold temperature of regulation to infrared view thus removing ground unrest identifies heating region.When heating region judging part 12 judges whether the heating region identified by heating region identification part 11 is in the position determining circuit defect portion the best scope in.Defective locations determination portion 13 is according to the position being judged as best heating region determination circuit defect portion.
Fig. 3 is the check process figure of the distribution inspection method that an embodiment of the invention are shown.Inspection method of the present invention is described in detail by the order of the step of the S1 to S10 shown in Fig. 3.In addition, distribution inspection method is programmed and is recorded in recording medium, is saved in the mode of embodied on computer readable.
In the check process of present embodiment, take multiple infrared view, extract the image being suitable for the position determining circuit defect portion, determine the position in circuit defect portion exactly.
Step S1 is for executing alive preparation to the distribution of substrate component 14, the probe of connecting portion 6 is contacted with the distribution terminal of substrate component 14, voltage application portion 7 is electrically connected with distribution terminal.
In step s 2, utilize image pickup section 9, start the shooting of the infrared view on substrate component 14 surface.Infrared view is taken as dynamic image or takes continuously as rest image.In addition, be before voltage applying in the beginning time point of step S2, therefore also can take the infrared view under athermic state.
In step s3, from voltage application portion 7 by applying voltage the wiring closet of connecting portion 6 pairs of substrate components 14.Applying voltage different according to the resistance value in distribution, circuit defect portion, such as, is the DC voltage of 50V.
In step s 4 which, apply from voltage start terminate the shooting of infrared view after the stipulated time.The so-called stipulated time is the time being produced enough heatings by the applying voltage of step S3 under the wiring closet of substrate component 14 has circuit defect portion situation, such as, from voltage apply start to terminate the shooting of infrared view after degree through 2 seconds.
In step s 5, the whole multiple infrared view taken between step S2 to step S4 is temporarily saved in image storage part 10 as image table 18.At this, step S2 is obtained operation to step S5 as image.In addition, as shown in Figure 4, the infrared view taken by per moment is such as saved as the corresponding table of moment 18a (Tn) and infrared view 18b (IMGn) by image table 18.
In step s 6, terminate to apply the voltage of wiring closet.At this, step S3 to step S6 is set to heating operation.The order of this step S6 and step S5 can be put upside down, also can executed in parallel.In addition, when the data volume of infrared view many and preserve need spended time, also can the voltage of wiring closet be applied FEFO, to obtaining the effect of the hot burden alleviated substrate component 14 applying.
Step S7 to S10 is the operation in image processing part 4, and select from multiple infrared view the infrared view being suitable for distribution inspection, real-time image processing carries out the determination of defective locations.
In the step s 7, select the infrared view IMGn in regulation moment from image table 18, be sent to heating region identification part 11.At this, the so-called regulation moment refers to moment Tn, and moment Tn is by initial setting in advance.Therefore in the step s 7, the infrared view IMGn of the moment Tn of initial setting is sent to heating region identification part 11 in advance.The average moment that after as long as the establishing method of moment Tn is such as set in and applies voltage to distribution and defective part, appropriateness is generated heat.
Step S8 carries out image procossing to identify the heating region identification operation of heating region to the infrared view in regulation moment in heating region identification part 11.At first, in order to remove the ground unrest beyond heating region, set point of temperature is generated binary image as threshold value by the infrared view in moment according to the rules.Then, presence or absence, the area of heating region is evaluated according to the binary image that can be identified by computing machine etc.In addition, carry out at first the infrared view of the process of step S7 to as if the infrared view IMGn of moment Tn of initial setting.
At this, supplement about heating region and radiance, in general, the temperature that infrared camera measures is by the impact of the radiance of subject.Substrate comprises the material that the radiances such as wiring material such as glass, chromium, aluminium, copper are different.Therefore, the substrate temperature on the substrate of mensuration can not whole face all the same, in order to take heating region accurately, need the impact of removing radiance.Therefore, the temperature variation image of the difference of the infrared view before also can applying according to the infrared view and voltage achieving the regulation moment generates binary image.
Whether step S9 judges can according to the position in the heating region determination circuit defect portion identified in step s 8 in heating region judging part 12.Below illustrate with Fig. 5 and Fig. 6 and need the reason of carrying out this judgement.
Fig. 5 illustrates that the substrate component 14 producing heating from circuit defect portion 20 to being applied by voltage by per moment is taken and the example of infrared view that obtains.Substrate component 14 is such as liquid crystal panel active-matrix substrate used, and multiple distribution R arranged side by side in the X direction and distribution L arranged side by side in the Y direction intersects across insulator.Such as thin film transistor (TFT) (TFT:ThinFilmTransistor) is formed with as not shown on-off element in each crossover sites.At this, illustrate that the cross part at X distribution RX of X-direction and X distribution LX of Y-direction produces the example in circuit defect portion 20.In addition, in order to easy understand, in infrared view, the display of distribution R and distribution L overlap is made.
In addition, infrared view IMG1 ~ IMG5 changes hachure kind for each heating region and represents, corresponds respectively to the moment T1 ~ T5 after 0.05 second, after 0.1 second, after 0.2 second, after 0.3 second, after 1 second from voltage applying starts.
The heating that distribution RX, LX and circuit defect portion 20 produce is according to joule rule, proportional with the quadratic sum time of resistance, electric current.Flow through distribution RX, LX identical with the electric current in circuit defect portion 20, the circuit defect portion 20 that therefore resistance is large is easier than distribution RX, LX to generate heat.Therefore, when firm applying voltage, generate heat near circuit defect portion 20 as infrared view IMG1, heating region is pressed resistance order from big to small and is expanded to distribution RX, LX.
When the application time of voltage is elongated, the heating of distribution RX, LX by heat transfer also to each distribution direction, each wiring width Directional Extension of distribution RX, LX.Such as, in the heating region of moment T5 after 1 second, as shown in infrared view IMG5, except circuit defect portion 20 and distribution RX, LX, also comprise the distribution etc. near it.
Fig. 6 is the schematic diagram generating discernible binary image (a) ~ (d) such as computing machine according to infrared view IMG1 ~ IMG5 respectively.Infrared view IMG1 becomes the appearance of binary image (a), and heating region 21 is only identified near circuit defect portion 20, due to too small and likely omit or misidentification.In addition, infrared view IMG2 also becomes the appearance of binary image (b), and the heating region 21 of distribution RX is split into multiple in the mode of the style of calligraphy characterized by hollow strokes, likely thinks it by mistake circuit defect portion 20 respectively.
In addition, infrared view IMG5 becomes the appearance of binary image (d), and heating region 21 and circuit defect portion 20 expand excessive from distribution RX, LX, and circuit defect portion 20 is covered by heating region, is difficult to the position determining circuit defect portion 20.
On the other hand, infrared view IMG3, IMG4 become the appearance of binary image (c), can not omit heating region 21, and circuit defect portion 20 can not be overshadowed in heating region, are identified with the size of appropriateness.
Like this, identify heating region according to the infrared view based on which kind of moment, the easy degree that the position that greatly can change the circuit defect portion carried out below is determined.
But, infrared view IMG3, IMG4 of expecting are the flashy infrared views from voltage applies after 0.2 second, after 0.3 second, in addition, according to the resistance value etc. of circuit defect portion 20, distribution, the moment becoming the such state of infrared view IMG3, IMG4 also can change.Therefore, the infrared view in the initial regulation moment selected not necessarily can be determined therefore to need the heating region of step S9 to judge operation by the infrared view of the best of the position in circuit defect portion.
In step s 9, judge whether the heating region of binary image according to Fig. 6 (a) ~ (d) to determine the position in circuit defect portion.Such as, calculating the characteristic quantity of the size evaluating heating region, when this characteristic quantity is in the scope of regulation, be judged as according to the position in heating region determination circuit defect portion, the defective locations determination operation of step S10 to be entered.Characteristic area such as uses the area of heating region, heating and the heating width of the distribution expanded.In addition, the proper range of regulation is predetermined according to the best heating region that Fig. 6 (c) is such.
Depart from the proper range of regulation at characteristic quantity, when being judged as to determine the position in circuit defect portion by heating region judging part 12, change to the infrared view in other moment different from the regulation moment.
Such as, as Fig. 6 (a), Fig. 6 (b), in the situation (situation of characteristic quantity < proper range) that the characteristic quantity of heating region is less than proper range, the regulation moment is changed at rear moment Tn+1, returns step S7.
In addition, such as, as Fig. 6 (d), in the situation (situation of characteristic quantity > proper range) that the characteristic quantity of heating region is larger than proper range, the regulation moment is changed at front moment Tn-1, returns step S7.
The moment changing to which kind of degree wishes to adjust according to circuit defect portion 20 and the resistance value of distribution, the ratio of resistance.That is, when returning step 7 from step 9, moment from moment Tn only being changed 1, but is not limited to 1, the change also can carrying out more than 2 adjusts.By carrying out large change, have can reduce step 7,8, the effect of the re-treatment number of times of 9.
In addition, wish according to resistance value to change the regulation moment of infrared view.When resistance value becomes large, the substrate thermal value that voltage applies to cause reduces.That is, the moment of taking best infrared view can become late.Therefore, wish that the resistance value larger regulation moment is more late.On the contrary, the resistance value less regulation moment more early.
Return step S7 when the characteristic quantity of heating region departs from proper range, reselect the infrared view in the moment after into change, the repetition heating region identification operation of step S8 and the heating region of step S9 judge operation.In addition, such as in the 2nd later heating region identification operation, use the best infrared view in other moment, when the characteristic quantity of the 2nd heating region roughly falls into more in proper range, also can omit the process of the 2nd step S9 and enter the defective locations determination operation of step S10.
Step S10 determines operation according to the position of the position in heating region determination circuit defect portion 20.Fig. 7 represents the shape example of the heating region identified according to binary image, and operation is determined in the position utilizing Fig. 7 to carry out description of step S10.
The result that inventor carries out testing shows, the shape of heating region is balanced by the resistance value in wired electric resistance and circuit defect portion, become the heating shape of the matchstick type shown in Fig. 7 (a), or become the heating shape of the pencil-type shown in Fig. 7 (b).According to the difference of this heating shape, the method for determining position in circuit defect portion 20 also can change.As shown in Fig. 7 (c), the difference of heating shape automatically judges by measuring horizontal width cause computing machine etc. from the top of heating region.
The position in circuit defect portion 20 can utilize binary image to be determined by existing image processing method.Such as, when the heating shape of matchstick type, can by identify and the process extracting the circular portion on top → calculate center of gravity is determined.In addition, when the heating shape of pencil-type, also can determine by the process of the apical pixel of binary image → graph thinning → fine rule.
As mentioned above, according to distribution inspection method of the present invention, independently can extract best heating region from multiple infrared view with the state in distribution, circuit defect portion, easily determine the position in circuit defect portion.Therefore, when there is multiple circuit defect portion with different conducting states, also determine position by a distribution inspection.
In addition, determine position by a distribution inspection, therefore can shorten inspection required time, also can reduce the damage that temperature rises to wiring substrate etc.In addition, the invention is not restricted to above-mentioned embodiment, various change can be carried out in the scope shown in claim, by various embodiments respectively disclosed technological means suitably combine the scope that the embodiment obtained also is contained in technology of the present invention.
The present invention is applicable to the distribution circuit defect detecting active-matrix substrate or be formed with in the substrate of multiple distribution, is not limited to liquid crystal indicator, organic EL display or solar cell panel, can be used for the inspection of various substrate.
In addition, in the present invention, can utilize and be formed in logical circuit on integrated circuit (IC (integratedcircuit) chip) with part or all in the process of hardware implementing signal providing unit 2, image processing part 4, central control 5, CPU (centralprocessingunit: central processing unit), MPU (microprocessorunit: microprocessor) also can be used with software simulating.
And, the object of this invention is to provide the recording medium of the program code (execute form program, intermediate code program, source program) recording the control program as the software realizing above-mentioned functions in the mode of embodied on computer readable, also by computing machine (or CPU, MPU) read be recorded in recording medium program code and perform realize.
Recording medium can adopt such as tape, the band class of tape etc., comprise the disks such as soft (Off ロ ッ ピ ー (registered trademark)) dish/hard disk, CD-ROM (compactdiscread-onlymemory: close-coupled compact disc-ROM)/MO (magneto-optical: magneto-optic)/MD (MiniDisc (Mini Disk), registered trademark) the dish class of the CD such as/DVD (digitalversatiledisk: digital versatile disc)/CD-R (CDRecordable: CD-R), the card classes such as IC-card (comprising storage card)/light-card, semiconductor memory class or the PLD (Programmablelogicdevice: programmable logic device (PLD)) such as mask rom/EPROM (erasableprogrammableread-onlymemory: Erasable Programmable Read Only Memory EPROM)/EEPROM (electricallyerasableandprogrammableread-onlymemory: Electrically Erasable Read Only Memory)/flash rom, the logical circuit classes etc. such as FPGA (FieldProgrammableGateArray: field programmable gate array).
And also can it be made to may have access to internet, public servicer etc. the software uploads realizing above-mentioned functions, user etc., by downloading software, be installed on distribution testing fixture to implement the present invention.
description of reference numerals
1 distribution testing fixture
2 signal providing unit
3 infrared ray dynamic image shoot parts
4 image processing parts
5 central control
6 connecting portions
7 voltage application portion
8 resistance measurement portions
9 infrared image shoot parts
10 infrared image storage parts
11 heating region identification parts
12 heating region judging parts
13 defective locations determination portions
14 substrate components
20 circuit defect portions
21 heating regions
Claims (8)
1. a distribution inspection method, checks that the distribution being formed at substrate is with or without circuit defect portion, is characterized in that,
Comprise:
Heating operation, applies voltage to above-mentioned distribution and above-mentioned circuit defect portion is generated heat;
Image obtains operation, and shooting aforesaid substrate obtains infrared view separately of multiple moment;
Heating region identification operation, uses the above-mentioned infrared view in the moment preset to identify heating region;
Can heating region judges operation, judge the position determining above-mentioned circuit defect portion according to above-mentioned heating region; And
Defective locations determination operation, determines the position in above-mentioned circuit defect portion according to above-mentioned heating region,
And, when judging the position being judged as in operation determining above-mentioned circuit defect portion at above-mentioned heating region, above-mentioned heating region identification operation uses the above-mentioned infrared view in other moment different from the above-mentioned moment preset to identify above-mentioned heating region.
2. distribution inspection method according to claim 1, is characterized in that,
Above-mentioned heating region judges that operation calculates the characteristic quantity of the size evaluating above-mentioned heating region,
When in the scope that above-mentioned characteristic quantity is in regulation, be judged as the position determining above-mentioned circuit defect portion.
3. distribution inspection method according to claim 2, is characterized in that,
Above-mentioned characteristic quantity correspond to the area that calculates according to above-mentioned heating region or in the heating width of distribution that calculates according to above-mentioned heating region at least any one.
4., according to claim 2 or distribution inspection method according to claim 3, it is characterized in that,
When above-mentioned characteristic quantity is less than the scope of afore mentioned rules, above-mentioned heating region identification operation uses the infrared view in the moment more late than the above-mentioned moment preset.
5., according to claim 2 or distribution inspection method according to claim 3, it is characterized in that,
When above-mentioned characteristic quantity is larger than the scope of afore mentioned rules, above-mentioned heating region identification operation uses the infrared view in the moment more Zao than the above-mentioned moment preset.
6. distribution inspection method according to claim 1, is characterized in that,
There is the resistance measurement operation of the resistance value measuring above-mentioned distribution,
The moment preset and other moment of above-mentioned infrared view is changed according to above-mentioned resistance value.
7. a distribution testing fixture, checks that the distribution being formed at substrate is with or without circuit defect portion, is characterized in that,
Comprise:
Heat-generating units, it applies voltage to above-mentioned distribution makes above-mentioned circuit defect portion generate heat;
Image acquisition unit, its shooting aforesaid substrate obtains infrared view separately of multiple moment;
Heating region recognition unit, it uses the above-mentioned infrared view in the moment preset to identify heating region;
Heating region judging unit, can its judgement determine the position in above-mentioned circuit defect portion according to above-mentioned heating region; And
Defective locations determining unit, it determines the position in above-mentioned circuit defect portion according to above-mentioned heating region,
And, when being judged as the position cannot determining above-mentioned circuit defect portion in above-mentioned heating region judging unit, above-mentioned heating region recognition unit uses the above-mentioned infrared view in other moment different from the above-mentioned moment preset to identify above-mentioned heating region.
8. distribution testing fixture according to claim 7, is characterized in that,
Possess the resistance measurement unit of the resistance value measuring above-mentioned distribution,
The moment preset and other moment of above-mentioned infrared view is changed according to measured above-mentioned resistance value.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-248454 | 2011-11-14 | ||
| JP2011248454A JP5886004B2 (en) | 2011-11-14 | 2011-11-14 | Wiring inspection method and wiring inspection apparatus |
| PCT/JP2012/078417 WO2013073387A1 (en) | 2011-11-14 | 2012-11-02 | Wire inspection method, and wire inspection device |
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| Publication Number | Publication Date |
|---|---|
| CN103890596A CN103890596A (en) | 2014-06-25 |
| CN103890596B true CN103890596B (en) | 2016-02-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280052749.XA Expired - Fee Related CN103890596B (en) | 2011-11-14 | 2012-11-02 | Distribution inspection method and distribution testing fixture |
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| Country | Link |
|---|---|
| JP (1) | JP5886004B2 (en) |
| CN (1) | CN103890596B (en) |
| WO (1) | WO2013073387A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104320077A (en) * | 2014-09-29 | 2015-01-28 | 广东产品质量监督检验研究院 | Rapid detection method for photovoltaic components |
| CN104569722A (en) * | 2014-12-31 | 2015-04-29 | 江苏武进汉能光伏有限公司 | Test method of thin-film battery micro-short circuit |
| KR102032071B1 (en) * | 2015-09-02 | 2019-10-14 | 가부시키가이샤 히다치 하이테크놀로지즈 | Circuit test method and sample test device |
| JP6769607B2 (en) * | 2015-11-20 | 2020-10-14 | 学校法人日本大学 | High temperature region extractor |
| CN109545115A (en) * | 2018-12-04 | 2019-03-29 | 深圳市华星光电半导体显示技术有限公司 | Device of testing electrical properties and device of testing electrical properties cross hairs precise defect location method |
| CN116699428B (en) * | 2023-08-08 | 2023-10-10 | 深圳市杰成镍钴新能源科技有限公司 | Defect detection method and device for retired battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309108A (en) * | 1991-07-30 | 1994-05-03 | Hitachi, Ltd. | Method of inspecting thin film transistor liquid crystal substrate and apparatus therefor |
| CN1395112A (en) * | 2001-05-30 | 2003-02-05 | 株式会社萌利克 | Method and device for detecting semiconductor circuit |
| CN1620603A (en) * | 2002-01-23 | 2005-05-25 | 马雷纳***有限公司 | Employing infrared thermography for defect detection and analysis |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3252451B2 (en) * | 1991-07-30 | 2002-02-04 | 株式会社日立製作所 | Thin film transistor liquid crystal substrate inspection method and apparatus |
| JP3229411B2 (en) * | 1993-01-11 | 2001-11-19 | 株式会社日立製作所 | Method of detecting defects in thin film transistor substrate and method of repairing the same |
| JP3765519B2 (en) * | 1998-05-27 | 2006-04-12 | オプトレックス株式会社 | Wiring pattern inspection method and apparatus |
| US6714017B2 (en) * | 2000-11-30 | 2004-03-30 | Candescent Technologies Corporation | Method and system for infrared detection of electrical short defects |
| JP2003215081A (en) * | 2002-01-24 | 2003-07-30 | Central Glass Co Ltd | Method and apparatus for inspecting disconnection of conductive wire formed on plate glass |
-
2011
- 2011-11-14 JP JP2011248454A patent/JP5886004B2/en not_active Expired - Fee Related
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2012
- 2012-11-02 CN CN201280052749.XA patent/CN103890596B/en not_active Expired - Fee Related
- 2012-11-02 WO PCT/JP2012/078417 patent/WO2013073387A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309108A (en) * | 1991-07-30 | 1994-05-03 | Hitachi, Ltd. | Method of inspecting thin film transistor liquid crystal substrate and apparatus therefor |
| CN1395112A (en) * | 2001-05-30 | 2003-02-05 | 株式会社萌利克 | Method and device for detecting semiconductor circuit |
| CN1620603A (en) * | 2002-01-23 | 2005-05-25 | 马雷纳***有限公司 | Employing infrared thermography for defect detection and analysis |
Also Published As
| Publication number | Publication date |
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| JP2013104770A (en) | 2013-05-30 |
| WO2013073387A1 (en) | 2013-05-23 |
| JP5886004B2 (en) | 2016-03-16 |
| CN103890596A (en) | 2014-06-25 |
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