CN209028177U - The independent life prediction module of chip - Google Patents
The independent life prediction module of chip Download PDFInfo
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- CN209028177U CN209028177U CN201821778643.9U CN201821778643U CN209028177U CN 209028177 U CN209028177 U CN 209028177U CN 201821778643 U CN201821778643 U CN 201821778643U CN 209028177 U CN209028177 U CN 209028177U
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Abstract
The utility model provides a kind of independent life prediction module of chip, can individually predict the service life of chip to decide whether to replace comprising: chip (10), using a part of region of the chip as detection zone (11)；Impedance detection unit (21) is connected to detection zone (11) by binding line (60), detects impedance of the impedance of detection zone (11) as chip (10)；And judging unit (22), according to the impedance for the chip (10) that impedance detection unit (21) detects, to judge whether the deterioration of chip (10) is more than preset threshold value, to decide whether to replace.
Description
Technical field
The utility model relates to a kind of independent life prediction modules of chip, can individually predict the service life of chip and determine
It is fixed whether to replace.
Background technique
With electronic information technology application it is increasingly extensive, influence of the various electronic products to modern society increasingly increases,
Reliability has become the most important quality index of electronic product.And reliability device high for chip, power device etc., to it
The requirement of life of product increasingly increases.However, in the prior art, accurately predicting the service life of various chips such as IGBT module still
It is so the problem of industry.And in order to ensure its reliability, usually using periodic replacement method come.But it is existing for the replacement cycle
There is technology to be mainly based upon mathematical statistics, accelerated life test, mathematical model etc. to determine (such as non-patent literature 1, patent document
1).However, traditional mathematical model needs to consider the various physics such as rated current, voltage, output power, temperature, frequency, loss
Parameter, and accelerated life test also at least needs could complete for thousands of hours, this just can not quickly and easily predict chip
Service life to replace in time.
Existing technical literature
Non-patent literature 1: " life prediction of power IGBT module ", Wang Yan is just equal to be write, and electric drive for locomotive 2013 the 2nd
Phase, on March 10th, 2013
Patent document 1: Chinese patent CN107967928A
Utility model content
Technical problem to be solved
The purpose of this utility model is to provide a kind of independent life prediction modules of chip, can quickly and accurately predict
The service life of chip out, to replace chip in time, to guarantee the reliability of chip.
The technological means taken in order to solve the technical problem
The independent life prediction module of the chip of the utility model includes:
Chip, using a part of region of the chip as detection zone；
Impedance detection unit, the impedance detection unit are connected to the detection zone by binding line, detect the detection
Impedance of the impedance in region as the chip；And
Judging unit, the impedance for the chip which detects according to the impedance detection unit, to judge
Whether the deterioration of the chip is more than preset threshold value, to decide whether to replace the independent life prediction mould of the chip
Block.
In the independent life prediction module of the chip of the utility model, resistance of the preferably described judging unit in the chip
When resisting greater than specified value, judge that the deterioration of the chip has been more than the threshold value.
In the independent life prediction module of the chip of the utility model, the preferably described judging unit has storage unit, should
Be stored in association in storage unit the chip the threshold value and the specified value.
In the independent life prediction module of the chip of the utility model, the preferably described judging unit further include:
Comparing section, the comparing section is to the impedance of the chip and is stored in the specified value of the storage unit and compares
Compared with；And
Judging part, the judging part judge that the deterioration of the chip has been more than institute when the impedance is greater than the specified value
State threshold value.
In the independent life prediction module of the chip of the utility model, it is preferably also equipped with alarm unit, the alarm unit
It when the judging unit judges that the deterioration of the chip has been more than the threshold value, sends a warning, prompts operator should
The independent life prediction module of chip is replaced.
In the independent life prediction module of the chip of the utility model, the preferably described impedance detection unit passes through detection institute
Electric current and the voltage of detection zone are stated to calculate the impedance of the detection zone.
In the independent life prediction module of the chip of the utility model, the preferably described impedance detection unit includes:
Detect the current sensor of the electric current of the detection zone；
Detect the voltage sensor of the voltage of the detection zone；And
The calculation part of the impedance of the detection zone is calculated according to the electric current and the voltage.
In the independent life prediction module of the chip of the utility model, the preferably described chip is igbt chip.
In the independent life prediction module of the chip of the utility model, the preferably described electric current is the hair of the igbt chip
Emitter-collector current, the voltage are emitter-collector voltage of the igbt chip.
Utility model effect
By using the independent life prediction module of the said chip of the utility model, chip can quickly and be accurately predicted
Service life, to replace chip in time, to guarantee the reliability of chip.
Detailed description of the invention
Fig. 1 is the schematic perspective view for indicating the independent life prediction module 100 of the chip of the utility model.
Fig. 2 is the functional block diagram for indicating the predicting unit 20 in the independent life prediction module 100 of the chip of the utility model.
Fig. 3 is the equivalent circuit diagram for indicating IGBT.
Fig. 4 is the stream for indicating to predict the method in chip service life in the independent life prediction module 100 of the chip of the utility model
Cheng Tu.
Specific embodiment
In the following, the independent life prediction module of the chip of the utility model is specifically described referring to attached drawing.
Fig. 1 is the schematic perspective view for indicating the independent life prediction module 100 of the chip of the utility model.Fig. 2 is to indicate
The functional block diagram of predicting unit 20 in the independent life prediction module 100 of the chip of the utility model.
As shown in Figure 1, the independent life prediction module 100 of chip is made of chip 10 and predicting unit 20.Chip 10 and pre-
It surveys unit 20 to be arranged on insulating substrate 30, chip 10 is electrically connected by lead 40 and circuit pattern 50 set on substrate 30
It connects.Predicting unit 20 is connected to a part of region i.e. detection zone 11 of chip 10 by binding line 60.Predicting unit 20 may be used also
With the various equipment being connected to outside the independent life prediction module 100 of chip, such as processor (not shown).
Chip 10 herein is illustrated by taking IGBT (insulated gate bipolar transistor) chip as an example, but the utility model institute
The chip being related to is not limited to igbt chip, is also possible to PNP chip, MOSFET (metal oxide semiconductor field effect transistor
Pipe) chip, RFIC (RF IC) chip etc..
As shown in the equivalent circuit diagram of Fig. 3, IGBT has grid G, emitter E and collector C these three terminals, works as grid
When applying forward voltage between G and emitter E, IGBT conducting, otherwise apply backward voltage, IGBT shutdown.It is sent out by measurement
The electric current that is flowed through between emitter-base bandgap grading E and collector C and voltage between the two, according to Ohm's law, the hair of the available IGBT
Impedance of the resistance as IGBT between emitter-base bandgap grading E and collector C.About IGBT and its specific structure and function of chip, at this
It is repeated no more in utility model.When IGBT is because of service life aging, impedance becomes larger.It therefore, can be with by detecting the impedance of IGBT
The degradation of the chip is grasped, and then learns whether it has reached the critical service life and replaced.Thus, it is practical new at this
In type, the degradation of chip is judged by the impedance of detection chip.
Fig. 2 is returned to, predicting unit 20 includes impedance detection unit 21, judging unit 22 and alarm unit 23.Wherein, impedance
Detection unit 21 has current sensor 211, voltage sensor 212 and calculation part 213.Current sensor 211 detects IGBT core
Electric current between emitter E in piece 10 and collector C, and the electric current input calculation part 213 that will test.Voltage sensor
The voltage between emitter E and collector C in 212 detection igbt chips 10, and the voltage input calculation part that will test
213.The voltage that the electric current and voltage sensor 212 that calculation part 213 is detected according to current sensor 211 detect, calculates
The impedance of igbt chip, and it is output to the comparing section 221 of judging unit 22.
Judging unit 22 has comparing section 221, judging part 222 and storage unit 223.Comparing section 221 calculates calculation part 213
Impedance out is compared with the specified value being stored in storage unit 223, and comparison result is output to judging part 222.Judgement
Portion 222 is judged as that the degradation of igbt chip 10 has been more than one when comparison result is that calculated impedance is greater than specified value
Determine threshold value, the independent life prediction module 100 of chip needs replacing.Judging part 222 is that calculated impedance is less than in comparison result
When equal to specified value, it is judged as that the degradation of igbt chip 10 is less than the certain threshold value being stored in storage unit 223, chip
Independent life prediction module 100 does not need to replace.Judging result is output to alarm unit 23 by judging part 222.In addition, storage unit
In 223, the above-mentioned specified value for being compared with the calculated impedance of calculation part 213 and the degradation for judging chip
Certain threshold value store in association.
Alarm unit 23 is issued in the case where the degradation that judging result is igbt chip 10 has been more than certain threshold value
Warning information, so that operator be prompted to replace the independent life prediction module 100 of the chip.
In present embodiment, the lower left corner region of igbt chip 10 is had chosen as detection zone 11, and make current sense
Device 211, voltage sensor 212 be respectively electrically connected to collector C and the emitter E of igbt chip 10 with measure the two electrodes it
Between electric current and voltage.But detection zone 11 is not limited to the case where diagram, as long as being able to detect that the above-mentioned of igbt chip 10
To calculate its impedance, which be can be set in any position of chip 10 for electric current and voltage.
In present embodiment, alarm unit 23 can be the liquid crystal display of output character, picture or sound etc., loudspeaking
Device, flashing lamp etc..
In present embodiment, the storage unit 223 for being set to judging unit 22 can be general nonvolatile memory,
It can be volatile memory.
In present embodiment, using current sensor and voltage sensor as impedance detection unit, based on detecting
Electric current and voltage calculate the impedance of chip, but impedance detection unit is not limited to this, can be with as long as being capable of detecting when impedance
Use arbitrary detection unit.
Finally, illustrating the process of the prediction technique of the independent life prediction module 100 of the chip of present embodiment in conjunction with Fig. 4
Figure.
In step sl, impedance detection unit 21 detects the impedance of the detection zone 11 on igbt chip 10, is made
For the impedance of igbt chip.
In step s 2, the impedance that comparing unit 22 detects impedance detection unit 21 is compared with specified value, is sentenced
Whether the degradation of disconnected igbt chip 10 has exceeded threshold value.
Judged in the case that the degradation of chip 10 has exceeded threshold value in step s 2 (for "Yes" in step S2), to police
The signal (step S4) that 23 output of declaration form member sounds an alarm it.
(for "No" in step S2) in the case where judging the degradation of chip 10 without departing from threshold value in step s 2, stream
Journey continues to detect back to step S1.
The explanation of above embodiment should be regarded as in all respects being to illustrate and not limit.Those skilled in the art's energy
It is enough suitably deformed and changes.The scope of the utility model indicates by the scope of the claims, and not by above-mentioned reality
Mode is applied to indicate.Moreover, the scope of the utility model further includes the embodiment party in the range being equal with the scope of the claims
The change of formula.
Label declaration
The independent life prediction module of 100 chips
10 chips
11 detection zones
20 predicting units
30 insulating substrates
40 leads
50 circuit patterns
60 binding lines
21 impedance detection units
211 current sensors
212 voltage sensors
213 calculation parts
22 judging units
221 comparing sections
222 judging parts
223 storage units
23 alarm units
Claims (9)
1. a kind of independent life prediction module of chip, can individually predict the service life of chip to decide whether to replace, feature
It is, comprising:
Chip, using a part of region of the chip as detection zone；
Impedance detection unit, the impedance detection unit are connected to the detection zone by binding line, detect the detection zone
Impedance of the impedance as the chip；And
Judging unit, the impedance for the chip which detects according to the impedance detection unit are described to judge
Whether the deterioration of chip is more than preset threshold value, to decide whether to replace the independent life prediction module of the chip.
2. the independent life prediction module of chip as described in claim 1, which is characterized in that
The judging unit judges that the deterioration of the chip has been more than the threshold when the impedance of the chip is greater than specified value
Value.
3. the independent life prediction module of chip as claimed in claim 2, which is characterized in that
The judging unit has storage unit, be stored in association in the storage unit chip the threshold value and the rule
Definite value.
4. the independent life prediction module of chip as claimed in claim 3, which is characterized in that
The judging unit further include:
Comparing section, the comparing section is to the impedance of the chip and is stored in the specified value of the storage unit and is compared；With
And
Judging part, the judging part judge that the deterioration of the chip has been more than the threshold when the impedance is greater than the specified value
Value.
5. such as the independent life prediction module of described in any item chips of Claims 1-4, which is characterized in that
It is also equipped with alarm unit, which judges that the deterioration of the chip has been more than the threshold value in the judging unit
When, it sends a warning, the independent life prediction module of operator's chip is prompted to replace.
6. such as the independent life prediction module of described in any item chips of Claims 1-4, which is characterized in that
The impedance detection unit calculates the impedance of the detection zone by detecting electric current and the voltage of the detection zone.
7. the independent life prediction module of chip as claimed in claim 6, which is characterized in that
The impedance detection unit includes:
Detect the current sensor of the electric current of the detection zone；
Detect the voltage sensor of the voltage of the detection zone；And
The calculation part of the impedance of the detection zone is calculated according to the electric current and the voltage.
8. the independent life prediction module of chip as claimed in claim 7, which is characterized in that
The chip is igbt chip.
9. the independent life prediction module of chip as claimed in claim 8, which is characterized in that
The electric current is emitter-collector current of the igbt chip, and the voltage is the emitter-of the igbt chip
Collector voltage.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821778643.9U CN209028177U (en) | 2018-10-30 | 2018-10-30 | The independent life prediction module of chip |
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| CN201821778643.9U CN209028177U (en) | 2018-10-30 | 2018-10-30 | The independent life prediction module of chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115099520A (en) * | 2022-07-15 | 2022-09-23 | 兰州交通大学 | Method for predicting service life of chip under different position faults of crimping type IGBT module |
-
2018
- 2018-10-30 CN CN201821778643.9U patent/CN209028177U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115099520A (en) * | 2022-07-15 | 2022-09-23 | 兰州交通大学 | Method for predicting service life of chip under different position faults of crimping type IGBT module |
| CN115099520B (en) * | 2022-07-15 | 2024-05-24 | 兰州交通大学 | Chip life prediction method under different position faults of crimping IGBT module |
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