CN103887420A - LED packaging structure and LED manufacturing method - Google Patents

LED packaging structure and LED manufacturing method Download PDF

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Publication number
CN103887420A
CN103887420A CN201410158042.8A CN201410158042A CN103887420A CN 103887420 A CN103887420 A CN 103887420A CN 201410158042 A CN201410158042 A CN 201410158042A CN 103887420 A CN103887420 A CN 103887420A
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China
Prior art keywords
substrate
led
groove
metallic gasket
led chip
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Pending
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CN201410158042.8A
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Chinese (zh)
Inventor
黄勇鑫
充国林
袁永刚
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Suzhou Dongshan Precision Manufacturing Co Ltd
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Suzhou Dongshan Precision Manufacturing Co Ltd
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Priority to CN201410158042.8A priority Critical patent/CN103887420A/en
Publication of CN103887420A publication Critical patent/CN103887420A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses an LED packaging structure and an LED manufacturing method. According to the LED packaging structure, an LED chip is fixed through a large metal gasket, so that the heat dissipation capacity of the LED chip is improved; due to the fact that fishing grooves are formed in the surface of a substrate, the area of combination between packaging adhesives and the substrate is increased, the bonding strength of the packaging adhesives is improved, and the negative influence caused by increase of the metal area is eliminated. The invention further provides a specific manufacturing method for the LED packaging structure.

Description

A kind of LED encapsulating structure and LED manufacture method
Technical field
The invention belongs to LED and manufacture field, particularly relate to a kind of encapsulating structure and manufacture method that can improve LED radiating effect.
Background technology
Light-emitting diode (Light Emitting Diode-LED) can be directly luminous energy electric energy conversion.LED chip is made up of two parts, and a part is P type semiconductor, occupies an leading position in its hole, the inside, and the other end is N type semiconductor, is mainly electronics.In the time that these two kinds of semiconductors couple together, between them, just form one " P-N knot ".In the time that electric current acts on this wafer by wire, electronics will be pushed to P district, and in P district, electronics, with hole-recombination, then will send energy with the form of photon, the luminous principle of LED that Here it is.
LED is as a kind of new type light source, owing to having the features such as energy-saving and environmental protection, life-span are long by increasingly extensive the lighting field that is applied to.LED luminous efficiency only can reach 10%～20% at present, and remaining Conversion of Energy of 80%～90% is heat energy.Along with succeeding in developing of high-power chip, greatly promote the application potential of LED at lighting field.But unit are has also discharged more heat, the obstacle that high-power LED chip heat dissipation problem has become current LED technology to apply in illuminating engineering simultaneously.
Refer to Figure 1A-1C, LED production technology generally includes following several step at present: get this base material material of a base material 10(and be generally resin, pottery, glass supporter etc.), on base material 10, carry out fixed chip 11, after chip 11 is fixing, carry out the welding of conductor wire 12, after having welded, carry out pressing mold, when pressing mold, fluorescent material and glue mixture 13 are injected in mould an actor's rendering of an operatic tune, complete compression molding.
In said method, when LED chip and base material are fixed, tend to arrange a metallic gasket on base material, for the bottom of fixed L ED chip.The area area general and LED chip of this metallic gasket is suitable.The heat of LED chip often conducts on the radiating element of base material or outside by this metallic gasket.But along with the lifting of LED power, this encapsulating structure faces following problem:
1. the metallic gasket area of chip placement area is less than normal, reduces chip thermal conduction rate, and luminous energy sustainment rate ability reduces;
If 2. increase the area of metallic gasket, packaging plastic and its binding ability reduce, easily layering;
3. both positive and negative polarity is realized thermoelectricity separation completely, and the passage of heat is completely independent, does not communicate with interior circuit.
Therefore, how to solve in LED encapsulating structure, the contradiction between the area of metallic gasket and packaging plastic binding ability, has become the difficult problem of industry in the urgent need to improving.
Summary of the invention
In view of this, the object of the invention is to propose encapsulating structure and the LED manufacture method of a kind of new LED.When this encapsulating structure can allow to use larger area metallic gasket, guarantee the binding ability on packaging plastic and substrate material surface.
The encapsulating structure of a kind of LED proposing according to object of the present invention, comprise substrate, LED chip and be used for LED chip to be encapsulated in the packaging plastic on substrate, the front of described substrate is provided with the metallic gasket that fixing described LED chip is used, the area of this metallic gasket is at least greater than described LED chip, be provided with two conductive welding spots in the both sides of this metallic gasket, these two conductive welding spots are conducting to the both positive and negative polarity on LED chip in the conducting metal lines that is positioned at substrate back, the front of described substrate is also provided with some grooves that drag for, these drag for groove and avoid described metallic gasket and two conductive welding spots and establish.
Preferably, the marginal position that drags for groove described in is provided with concaveconvex structure.
Preferably, described substrate is the one in glass, quartz, resin or pottery.
Preferably, the back side of described substrate is also provided with heat abstractor, and described metallic gasket runs through described substrate and contacts with described heat abstractor heat conduction.
Preferably, the both sides of described substrate are also provided with the metal electrode for doing electrical LED electric performance test, and this metal electrode runs through substrate and is connected with the conducting metal lines that is positioned at substrate back.
Meanwhile, the invention allows for a kind of LED manufacture method with above-mentioned encapsulating structure, comprise step:
One substrate motherboard is provided, on described substrate motherboard, comprise multiple metallic gaskets, the position at the corresponding LED chip place of described metallic gasket, the both sides of every metallic gasket are all provided with conductive welding spots, are provided with the conducting metal lines being connected with these conductive welding spots at substrate back;
On aforesaid substrate, offer and drag for groove, drag for the position of groove and avoid described metallic gasket and conductive welding spots;
LED chip is fixed on metallic gasket, then carries out wire bonds technique, the both positive and negative polarity on LED chip is connected with two conductive welding spots respectively by wire;
Packaging plastic is pressed into substrate front side by mould pressing process, and carries out solid type;
Finally, aforesaid substrate motherboard is carried out to cutting technique, form a LEDs device.
Preferably, described in, drag for groove and be distributed in the marginal position of every LEDs and/or the centre position of metallic gasket both sides.
Preferably, Gu after type, described packaging plastic be planar shaped or spherical in one.
Preferably, in the time thering is many row LED on substrate motherboard, between every two row LED, arrange one and drag for groove, cutting groove when this drags for groove simultaneously as cutting technique.
Compared with prior art, progressive of the present invention is embodied in:
1. increase chip cooling district metal level area, chip directly passes through independent radiating area, directly from bottom heat radiation, and better heat-radiation effect;
2. substrate non-metallic regions is dragged for groove, increases external sealant and base material adhesion, is difficult for layering when bring to power.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Figure 1A-1C is the schematic flow sheet of existing LED manufacture method.
Fig. 2 is the structural representation of the single LEDs encapsulating structure under first embodiment of the invention.
Fig. 3 is the substrate vertical view of encapsulating structure in second embodiment of the invention.
Fig. 4 A-4B is the structural representation of substrate motherboard in manufacture method of the present invention.
Embodiment
As described in the background art, in traditional LED encapsulating structure, the metallic gasket area that is used for fixing LED chip is too small, along with the lifting of LED chip power, the metallic gasket of this small size has been not enough to, to LED chip heat radiation, finally cause the reduction of LED luminous efficiency.But, if the area of simple this metallic gasket of raising can make again the contact area of packaging plastic and this metallic gasket increase, reduce with effective bond area of substrate.In the time that LED works, metallic gasket is heated hot, easily makes the bonding force of the packaging plastic on it decline and cause coming unstuck.
Therefore.The present invention has designed a kind of encapsulating structure of the metallic gasket area that not only can improve LED chip below, and this encapsulating structure can also solve after metallic gasket expands, the difficult problem that packaging plastic binding ability declines.Its main thought is, on the encapsulating face of substrate, outside metallic gasket region and solder joint region, to offer and drag for groove.These effects of dragging for groove are the effective contacts area that increases packaging plastic and substrate surface, improve the adhesion of packaging plastic with this.So, although the area change of metallic gasket, but owing to having guaranteed packaging plastic and base material effective contact area before, the bond strength of packaging plastic is guaranteed, greatly reduce because packaging plastic contacts the risk of coming unstuck causing with metallic gasket, and because the increase of metallic gasket area has improved the heat-sinking capability of whole LEDs.Meanwhile, the invention allows for the manufacture method that can make above-mentioned LED encapsulating structure.
Below, will be described in detail technical scheme of the present invention.
Refer to Fig. 2, Fig. 2 is the structural representation of the single LEDs encapsulating structure under first embodiment of the invention.As shown in the figure, this LED encapsulating structure comprises substrate 100, LED chip 101 and is used for LED chip 101 to be encapsulated in the packaging plastic 103 on substrate 100.Described substrate can be transparent material, such as glass, quartz, resin etc., can be also the nontransparent materials such as pottery, plastics.Be provided with in the front of substrate 100 (being encapsulating face) metallic gasket 102 that is used for fixing LED chip 101 use, the area of this metallic gasket 102 is at least greater than described LED chip 101, be provided with two conductive welding spots 104 in the both sides of this metallic gasket 102, the both positive and negative polarity on LED chip 101 is connected by two conductive welding spots 104 of two wires 105 and this respectively.Be provided with conducting metal lines (not shown) at the back side of substrate 100, these two conductive welding spots 104 are passed substrate 100 and are connected with these conducting metal lines, both positive and negative polarity on LED chip 101 is conducting on the conducting metal lines that is positioned at substrate 100 back sides being used for, and is finally connected with outside circuit by these conducting metal lines.
Metallic gasket 102 and conductive welding spots 104 are preferably copper product, and some other metal material with excellent conductive capability is also passable certainly, such as gold, silver, iron, aluminium etc.In one application, metallic gasket 102 also can be used for the radiating element of heat radiation specially for running through the metal derby of whole substrate 100, being provided with at the back side of this substrate 100, such as radiating fin or heat dissipation metal plate.This metallic gasket 102 contacts with the heat conduction of radiating element by running through substrate 100 formation, thereby the heat on LED chip is conducted on radiating element and dispelled the heat.It should be noted that between the conducting metal lines at substrate 100 back sides and radiating element or the metallic gasket 102 that runs through and should avoid contacting, can guarantee that like this circuit between heat conduction and the conduction of LED separates, complementary impact.
Special character of the present invention is: is also provided with some grooves that drag in the front of substrate 100, such as dragging for groove 106,107 in diagram, wherein drags for groove 106 and be opened in the edge of substrate 100, and the centre of dragging for groove 107 and be opened in substrate 100.For the restriction of dragging for groove and offering position, except illustrated position, can also there be a variety of modes, such as being opened in dragging for groove and can adopting the horizontal strip type that is parallel to long limit of centre position, even can offer many parallel, intersect or the bending groove that drags for, drag for groove and avoid metallic gasket 102 and two conductive welding spots 104 as long as meet these.For dragging for the width of groove and dragging for the spacing between groove, can, depending on the size of metallic gasket and conductive welding spots, the in the situation that of satisfied avoiding, can increase as much as possible and drag for groove in the shared ratio in whole surface.
These are opened in the groove that drags on surface, effectively increase the surface area of whole substrate 100, so, in the time that packaging plastic 103 is adhered to substrate front side, effective contact area of itself and substrate 100 increases, not only can make up the part area reducing between the packaging plastic that brings because of metallic gasket 102 area changes and substrate, and width and the quantity of dragging for groove by rational setting, can also, than original some contacts area of many increases, the bond strength between packaging plastic 103 and substrate 100 be improved.The LED encapsulating structure obtaining thus, in the time that LED chip is worked, due to the area change of beneath metallic gasket 102, the ability of its heat radiation is also increased, and has guaranteed the heat dissipation environment of high-capacity LED chip, and LED luminous efficiency is got a promotion.
Preferably, in the both sides of this substrate, be respectively provided with a metal electrode 108 that is used for doing LED electric performance test.This metal electrode 108 runs through the positive and negative of substrate 100 equally, is connected with the conducting metal lines that is positioned at substrate 100 back sides simultaneously.Total in the mode shown in diagram, these two metal electrodes 108 are designed to semicircular arc, only need press from both sides out with test clip the metal electrode of both sides when test.Certainly this metal motor can be also other shapes arbitrarily, as long as can meet the testing requirement of LED.
Refer to Fig. 3, Fig. 3 is the substrate vertical view of encapsulating structure in second embodiment of the invention.In this embodiment, except offering and drag for groove at substrate surface, increasing concaveconvex structure at the marginal position that drags for groove, the zigzag of these concaveconvex structures in diagram, can also be waveform, square waveform or Else Rule or irregular convex-concave pattern.By offering these concaveconvex structures, can further increase and drag for effective contact area that groove can provide, the binding ability of packaging plastic is improved.
Be elaborated below, then to the manufacture method of LED of the present invention.
First, provide a substrate motherboard, on this substrate motherboard, can make plurality of LEDs luminescent device.As shown in Fig. 4 A-4B, multiple metallic gaskets on substrate motherboard, are made, the position at the corresponding LED chip place of these metallic gaskets.The both sides of every metallic gasket are all provided with conductive welding spots, are provided with the conducting metal lines being connected with these conductive welding spots at substrate back.The manufacture craft of these metallic gaskets, conductive welding spots and conducting metal lines is the prior art that LED makes field, does not repeat them here.
On aforesaid substrate, offer and drag for groove, drag for metallic gasket and conductive welding spots that the position of groove is avoided making.As shown in Figure 4 B, drag for groove and be mainly distributed in the marginal position of every LEDs and/or the centre position of metallic gasket both sides.In the time thering is many row LED on substrate motherboard, can between every two row LED, arrange one and drag for groove, cutting groove when this drags for groove and can be used as follow-up cutting technique.Such as the substrate motherboard in diagram can be made two rows totally 4 LEDs luminescent devices, can see that wherein a position of dragging for groove is positioned at the centre position of two row LED devices, but should be understood that, after follow-up cutting technique, this drags for groove will be divided into two halves, and become separately the groove that drags for of described LED device edge.Same, if a number of LED device increases, the corresponding groove that drags for is offered also and can be increased, but the single LEDs device forming after cutting, the groove that drags for that still roughly can have as shown in Figure 2 distributes.Drag for particularly groove and offer and can pass through mould pressing process, Sheet Metal Forming Technology, or mold technique forms.
LED chip is fixed on metallic gasket, then carries out wire bonds technique, the both positive and negative polarity on LED chip is connected with two conductive welding spots respectively by wire.After bonding wire completes,, there is not electric heating universal link in current trend and the isolation of chip metallic region, makes chip lower zone completely for heat radiation, heat radiation performance.Then packaging plastic is pressed into substrate front side by mould pressing process, when pressing mold, positive other non-metallic regions, all with packaging plastic combination, increase adhesion, when bring to power, do not produce delamination.Then by solid packaging plastic type, Gu packaging plastic can be planar shaped after type, can be also spherical, conventionally select according to different application.The pressing mold of these chip technique for fixing, wire bonds technique and packaging plastic and solid type are all prior aries, repeat no more herein.
Finally aforesaid substrate motherboard is cut, form a LEDs device.When cutting, can be according to special cutting circuit, the groove that drags for of avoiding having offered carries out.And have on the substrate motherboard of many row LED at some, also can be in the middle of being produced on every row LED drag for groove as cutting groove, after cutting like this, the groove that drags for of this part just becomes " half groove ", is distributed in the edge of single LEDs device, as shown in Figure 2.
In sum, the present invention proposes the manufacture method of a kind of LED encapsulating structure and LED.This encapsulating structure adopts larger metallic gasket to fix LED chip, improves the heat-sinking capability to LED chip with this.And drag for groove and increase the bonded area of packaging plastic and substrate by offering at substrate surface, the bond strength that improves packaging plastic with this, offsets the negative effect bringing because expanding metallic area.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.To be apparent for those skilled in the art to the multiple modification of these embodiment, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.

Claims (9)

1. the encapsulating structure of a LED, comprise substrate, LED chip and be used for LED chip to be encapsulated in the packaging plastic on substrate, it is characterized in that: the front of described substrate is provided with the metallic gasket that fixing described LED chip is used, the area of this metallic gasket is at least greater than described LED chip, be provided with two conductive welding spots in the both sides of this metallic gasket, these two conductive welding spots are conducting to the both positive and negative polarity on LED chip in the conducting metal lines that is positioned at substrate back, the front of described substrate is also provided with some grooves that drag for, and these drag for groove and avoid described metallic gasket and two conductive welding spots and establish.
2. encapsulating structure as claimed in claim 1, is characterized in that: described in drag for groove marginal position be provided with concaveconvex structure.
3. encapsulating structure as claimed in claim 1, is characterized in that: described substrate is the one in glass, quartz, resin or pottery.
4. encapsulating structure as claimed in claim 1, is characterized in that: the back side of described substrate is also provided with heat abstractor, and described metallic gasket runs through described substrate and contacts with described heat abstractor heat conduction.
5. encapsulating structure as claimed in claim 1, is characterized in that: the both sides of described substrate are also provided with the metal electrode for doing electrical LED electric performance test, and this metal electrode runs through substrate and is connected with the conducting metal lines that is positioned at substrate back.
6. a LED manufacture method with the encapsulating structure described in claim 1-5 any one, is characterized in that, comprises step:
One substrate motherboard is provided, on described substrate motherboard, comprise multiple metallic gaskets, the position at the corresponding LED chip place of metallic gasket described in each, the both sides of every metallic gasket are all provided with conductive welding spots, are provided with the conducting metal lines being connected with these conductive welding spots at substrate back;
On aforesaid substrate, offer and drag for groove, drag for the position of groove and avoid described metallic gasket and conductive welding spots;
LED chip is fixed on metallic gasket, then carries out wire bonds technique, the both positive and negative polarity on LED chip is connected with two conductive welding spots respectively by wire;
Packaging plastic is pressed into substrate front side by mould pressing process, and carries out solid type;
Finally, aforesaid substrate motherboard is carried out to cutting technique, form a LEDs device.
7. LED manufacture method as claimed in claim 6, is characterized in that: described in drag for groove and be distributed in the marginal position of every LEDs and/or the centre position of metallic gasket both sides.
8. LED manufacture method as claimed in claim 6, is characterized in that: Gu after type, described packaging plastic be planar shaped or spherical in one.
9. LED manufacture method as claimed in claim 6, is characterized in that: in the time having many row LED on substrate motherboard, arrange one and drag for groove, cutting groove when this drags for groove simultaneously as cutting technique between every two row LED.
CN201410158042.8A 2014-04-18 2014-04-18 LED packaging structure and LED manufacturing method Pending CN103887420A (en)

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CN101740599A (en) * 2008-11-25 2010-06-16 采钰科技股份有限公司 Light-emitting diode devices and methods for fabricating the same
CN102148316A (en) * 2003-10-22 2011-08-10 惠州科锐半导体照明有限公司 Light-emitting die package with electric surface mounting
CN102916112A (en) * 2012-10-31 2013-02-06 佛山市国星光电股份有限公司 Large power LED and manufacturing method thereof
CN202905777U (en) * 2012-11-05 2013-04-24 佛山市国星光电股份有限公司 LED bracket and LED device thereof

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