CN103887300A - 具有高可靠性导热绝缘基板的功率igbt模块 - Google Patents

具有高可靠性导热绝缘基板的功率igbt模块 Download PDF

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Publication number
CN103887300A
CN103887300A CN201210570375.2A CN201210570375A CN103887300A CN 103887300 A CN103887300 A CN 103887300A CN 201210570375 A CN201210570375 A CN 201210570375A CN 103887300 A CN103887300 A CN 103887300A
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China
Prior art keywords
insulating substrate
igbt module
heat conductive
conductive insulating
heat conduction
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Pending
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CN201210570375.2A
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English (en)
Inventor
郭清
任娜
盛况
汪涛
谢刚
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Zhejiang University ZJU
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Zhejiang University ZJU
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Priority to CN201210570375.2A priority Critical patent/CN103887300A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明实施例公开了一种IGBT模块，涉及一种具有高可靠性导热绝缘基板的功率IGBT模块。IGBT模块结构中的导热绝缘基板通过焊锡与芯片直接结合，两者的热匹配程度是影响IGBT模块的热可靠性的关键因素之一。本发明通过采用热膨胀系数较小的金属(如Mo、Cr等)作为导热绝缘基板的上敷金属材料，实现芯片Si材料与导热绝缘基板的热匹配，减小热应力，从而提高模块的可靠性。

Description

具有高可靠性导热绝缘基板的功率IGBT模块
技术领域
本发明涉及一种具有高可靠性导热绝缘基板的功率IGBT模块。
背景技术
电力电子技术的迅猛发展对电力电子器件的模块化要求日益迫切，同时也对模块的性能提出了更高的要求，如今，功率模块正朝着大功率、高频、高可靠性、低损耗方向发展。因此，对IGBT模块的热可靠性也提出了更高要求。
IGBT模块结构中的导热绝缘基板通过焊锡与芯片直接结合，两者的热匹配程度是影响IGBT模块的热可靠性的关键因素之一，目前，导热绝缘基板的上敷金属层采用铜材料，然而，铜材料的热膨胀系数(17.5)与芯片Si材料的热膨胀系数(3)匹配度很低，在两者的界面焊锡层上产生大的应力，带来焊锡开裂等问题，降低了IGBT模块的寿命和可靠性。
鉴于此，迫切需要发明一种具有热匹配导热绝缘基板的高可靠性IGBT模块。
发明内容
本发明针对传统IGBT模块在可靠性上的不足，提供一种具有高可靠性导热绝缘基板的IGBT模块。本发明通过改变导热绝缘基板的上敷金属材料，实现芯片Si材料与导热绝缘基板的热匹配，减小热应力，从而提高模块的可靠性。
IGBT模块的内部结构包括芯片(1)、导热绝缘基板和基板(7)。其中，导热绝缘基板由上敷金属层(3)、陶瓷(4)、下敷铜层(5)组成。上敷金属层采用热膨胀系数较小的金属制作，如Mo、Cr、Sn等，能够减小上敷金属层与芯片界面的热应力，从而提高模块的可靠性。
附图说明
图1为典型IGBT模块的散热结构剖面图
具体实施方式
本发明IGBT模块的内部结构由芯片、导热绝缘基板和基板构成，其中导热绝缘基板由上敷铜层、陶瓷和下敷铜层组成。基板和导热绝缘基板通过钎焊结合，绝缘栅双极型晶体管芯片、二极管芯片和导热绝缘基板之间通过钎焊结合。导热绝缘基板的陶瓷和下敷铜层由直接键合法(DBC)形成，陶瓷和上敷金属层(Mo、Cr或Sn)由同样的方法形成。

Claims (2)

1.IGBT模块，包括基板、导热绝缘基板、绝缘栅双极型晶体管芯片、二极管芯片、功率端子、信号端子和外壳，基板和导热绝缘基板通过钎焊结合，绝缘栅双极型晶体管芯片、二极管芯片和导热绝缘基板之间通过钎焊结合，导热绝缘基板由陶瓷、上敷金属层和下敷铜层构成。
2.根据权利要求1所述的IGBT模块，其特征在于导热绝缘基板的上敷金属层采用热膨胀系数较小的金属材料，如Mo、Cr等金属。
CN201210570375.2A 2012-12-20 2012-12-20 具有高可靠性导热绝缘基板的功率igbt模块 Pending CN103887300A (zh)

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CN201210570375.2A CN103887300A (zh) 2012-12-20 2012-12-20 具有高可靠性导热绝缘基板的功率igbt模块

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104091797A (zh) * 2014-07-01 2014-10-08 浙江大学 一种三维结构的新型电力电子模块
CN105525332A (zh) * 2014-10-24 2016-04-27 中国科学院苏州纳米技术与纳米仿生研究所 一种降低钎料键合热应力的方法及封装芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148491A (ja) * 1995-09-19 1997-06-06 Tokyo Tungsten Co Ltd パワー半導体基板及びその製造方法
JP2000216278A (ja) * 1998-11-16 2000-08-04 Tokyo Tungsten Co Ltd 半導体パッケ―ジと、それに用いる放熱基板の製造方法
CN101443910A (zh) * 2006-05-12 2009-05-27 本田技研工业株式会社 功率半导体模块
CN101933139A (zh) * 2007-12-20 2010-12-29 爱信艾达株式会社 半导体装置及其制造方法
CN102710102A (zh) * 2012-06-18 2012-10-03 南京银茂微电子制造有限公司 一种液冷的igbt变流装置和制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148491A (ja) * 1995-09-19 1997-06-06 Tokyo Tungsten Co Ltd パワー半導体基板及びその製造方法
JP2000216278A (ja) * 1998-11-16 2000-08-04 Tokyo Tungsten Co Ltd 半導体パッケ―ジと、それに用いる放熱基板の製造方法
CN101443910A (zh) * 2006-05-12 2009-05-27 本田技研工业株式会社 功率半导体模块
CN101933139A (zh) * 2007-12-20 2010-12-29 爱信艾达株式会社 半导体装置及其制造方法
CN102710102A (zh) * 2012-06-18 2012-10-03 南京银茂微电子制造有限公司 一种液冷的igbt变流装置和制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104091797A (zh) * 2014-07-01 2014-10-08 浙江大学 一种三维结构的新型电力电子模块
CN105525332A (zh) * 2014-10-24 2016-04-27 中国科学院苏州纳米技术与纳米仿生研究所 一种降低钎料键合热应力的方法及封装芯片
CN105525332B (zh) * 2014-10-24 2018-11-09 中国科学院苏州纳米技术与纳米仿生研究所 一种降低钎料键合热应力的方法及封装芯片

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