CN103885122A - MEMS array electric variable optical attenuator and manufacturing method thereof - Google Patents
MEMS array electric variable optical attenuator and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an MEMS array electric variable optical attenuator and a manufacturing method thereof. The attenuator comprises an MEMS array optical blocking driver chip, an input optical fiber array and an output optical fiber array, wherein the direct optical coupling alignment is carried out on the input optical fiber array and the output optical fiber array; an MEMS optical blocking device array in the MEMS array optical blocking driver chip is arranged in the gap of the input optical fiber array and the output optical fiber array, independent control of optical signal power of N channels can be realized, and N is no smaller than 2. The array electric variable optical attenuator provided by the invention has the advantages of small size, low single channel cost, good consistency, large attenuation range, low driving voltage and the like.
Description
Technical field
The invention belongs to microelectric technique and optical communication technique field, relate to a kind of optical attenuator, relate in particular to a kind of array electric variable optical attenuator; Meanwhile, the invention still further relates to a kind of preparation method of array electric variable optical attenuator.
Background technology
Along with the rapid growth of optical communication business, ASON (Automatically Switched Optical Network) enters the practical stage of high speed development.ASON (Automatically Switched Optical Network) has the dynamic configurable ability of wavelength, has solved the problem that current dwdm system networking flexibility is poor, dynamic assignment ability is weak.ASON (Automatically Switched Optical Network) by thering is high degree of flexibility, tunable optical communication equipment forms, and needs a large amount of intellectualities, optical device and the module of dynamic-tuning.The optical device of dynamic-tuning and module are the cores and basis of ASON (Automatically Switched Optical Network), are the keys that builds ASON (Automatically Switched Optical Network).MEMS (micro electro mechanical system) (MEMS) technology combines with micro-optic, optical communication technique and Micro-Opto-Electro-Mechanical Systems (MOEMS) technology that produces, be considered to intelligent, the most feasible technology of tunable optical communication device manufacture, have the advantages such as miniaturization, array, cost degradation simultaneously concurrently.In recent years, along with the development of MOEMS technology, the relevant intelligent optical device based on MOEMS technology has also obtained significant progress, has been widely used in optical communication network.Wherein MOEMS variable optical attenuator (voa) becomes a large amount of MOEMS optical devices that use in current ASON (Automatically Switched Optical Network) development, has already become the main flow manufacturing technology of automatically controlled variable optical attenuator (EVOA).
Optical attenuator (OA) is one of device having the call of optical communication system, and its input, output are optical fiber, and major function is for balance, controls optical signal power, guarantees that optical communication system operates in best signal to noise ratio (S/N ratio) (S/N) state.Optical attenuator comprises the fixed and large class of adjustable optical attenuator (Variable OpticalAttenuator) two.For WDM optical network system, between multi-wavelength passage (channel) may there is difference in optical signal power, particularly the wavelength route dynamic change of ASON (Automatically Switched Optical Network) causes multi-wavelength interchannel optical signal power quick, significantly change, luminous power difference between wavelength channel will be exaggerated by fiber amplifier (EDFA), there is the uneven characteristic of Static and dynamic in the optical gain spectra of EDFA simultaneously, the luminous power difference that need to be used for dwindling between wavelength channel to each wavelength channel outfit variable optical attenuator meets dwdm optical communication system requirements with the signal to noise ratio (S/N ratio) (S/N) that maintains all passages.
Current fixed optical attenuator price is lower, is installed in a large number optical communication system in order to balance, control optical signal power, once installation is just unadjustable, therefore its market share reduces gradually, is substituted gradually by adjustable optical attenuator.Adjustable optical attenuator (VOA) can initiatively regulate optical signal power accurately and fast, and towards in conjunction with various optical modules, subsystem as the future development of light emission module, Optical Receivers, fiber amplifier, Wavelength-division multiplexer/demultiplexer, Reconfigurable Optical Add/drop Multiplexer (ROADM), form flat gain, the regulatable optical module of optical signal power and subsystem, meet the development of ASON, there is wide market.Adjustable optical attenuator comprises hand and two kinds of control modes of electric-controlled type.Hand VOA speed is slow, volume is large, is mainly used in laboratory.Electric-controlled type VOA(EVOA) the technology that realizes mainly comprise the technology such as micro-stepping motors, MEMS, waveguide, liquid crystal, magneto-optic, acousto-optic.Due to MEMS VOA, to have good optical property, low cost, low-voltage, low-power consumption, speed fast, microminiaturized, becomes main EVOA manufacturing technology.
The mechanism that MEMS VOA realizes optical attenuation has long-pending regulation and control of micro-light barrier, beam deflection, beam diffraction, light reflectivity and light reflection surface etc. several:
1) the MEMS VOA that micro-light barrier is realized, adopts the translation motion of the micro-light barrier of MEMS microactrator control, and in the time that micro-light barrier inserts the optical fiber gap between two optical fiber, the degree of coupling of the motion control light signal of micro-light barrier is realized the variable attenuation of light.Its a pair of simple optical fiber is placed in the V-type or U-shaped groove of making on silicon conventionally, is only applicable to carrying out the encapsulation of single VOA device.Adopt this optical package to have larger technical difficulty, these difficulties comprise: the grinding and polishing of simple optical fiber optics, particularly in order to there is very large technical difficulty in the angled end-face polishing that reduces optical echo; Simple optical fiber evaporation antireflection processing film; The oblique angle inconsistency of a pair of inclined surface fiber intercoupling, the oblique angle difference of inclined surface fiber will cause the increase of VOA device insertion loss; The technical difficulty that the oblique angle of inclined surface fiber brings its mutual optical coupled.Micro-chip MEMS optical attenuator that is in the light of Lucent company development, dynamic range can reach 50dB, insertion loss 1dB.Europe Sercalo Microtechnologies Inc. regulates the position of light barrier can in 2ms, realize the only MEMS VOA of 0.5dB of the damping capacity of 0-40dB, typical insertion loss by microactrator.
2) the MEMS VOA of beam deflection realization changes the coupling efficiency of double-fiber collimator light path by the rotation of MEMS reverse microemulsion catoptron, only needs very little angle variation (approximately 0.3 degree) just can realize the optical attenuation of 30dB.The companies such as Dicon, Santec, JDSU, Neophotonics adopt this technology to release MEMSVOA product, wherein Dicon has also released 8,10 passage MEMS VOA products, but this hyperchannel MEMSVOA mainly adopts and single MEMS VOA is carried out to simple combination realizes.Another kind of mode is the coupling fiber that adopts the realization of double-fiber collimator array and MEMS reverse microemulsion reflection mirror array, and double-fiber collimator array technique difficulty is large, cost is high.Therefore, adopt MEMS reverse microemulsion catoptron to realize hyperchannel MEMSVOA cost of products high, do not have a technical advantage.
3) the MEMS VOA that beam diffraction is realized is by MEMS Grating Modulation device regulation and control diffraction of light efficiency, control the size of optical signal power, but it is relevant that its optical attenuation is wavelength, be that the damping capacity of DWDM multi-wavelength signals is with wavelength variations, practicality is restricted, and equally also has the technical difficulty of array.
4) the MEMS VOA that light reflectivity regulation and control realize adopts MEMS anti-reflection structure (MARS) light modulated reflectivity, MARS structure comprises silicon wafer, is deposited on the silicon nitride film on sacrifice layer, mode with multilayer dielectric reflectance coating is worked, attract silicon nitride film to move to substrate by applying static voltage, air gap is reduced, change the light reflectivity of MARS.The MARS VCVAVOA of Bell laboratory based on MARS-MEMS technology can realize the decay of 20dB in 3 μ s.Lightconnect company develops FVOA2000 and the quick VOA of FVOA4000 two single channel based on MARS-MEMS technology, and has released 4,8, the 10 channel array VOA that form take FVOA4000 as elementary cell.This multichannel array VOA is only the simple combination of single FVOA4000MEMS VOA.The same wavelength of optical attenuation of VOA based on MARS-MEMS technology is correlated with, and practicality is also restricted.
5) the MEMS VOA that the long-pending regulation and control of light reflection surface realize adopts hot type of drive to drive MEMS micro-reflector, and translation motion stroke can reach 60 microns, and with the coupling of small light spot double-fiber collimator, the variation long-pending by light reflection surface changes reflected light signal power.This hot driver driving voltage is low, but power consumption is high.MEMSCAP provides this MEMS VOA chip, and domestic You Duo company purchases this chip and carries out device package.
Counting N due to the wavelength channel of DWDM communication system is 4,8,16,32,40 or 96, a MEMS VOA of each wavelength channel configuration, although the volume of single MEMS VOA is little, cost is not high yet, but the volume of the N passage MEMS VOA being combined by single MEMS VOA is large, cost is high, consistance is poor, therefore utilize the advantage of MEMS technology, development volume is little, single channel cost is low, and the hyperchannel VOA that the multichannel array VOA device of high conformity meets DWDM communication system has important practical value and market outlook.
The technology that array VOA is realized in current optic communication device field mainly adopts SOI silicon planar lightguide circuit (PLC) scheme, utilize Si electric current injection effect or Si thermo-optic effect manufacturing array waveguide VOA, but SOI waveguide device insertion loss large (about 2dB), driving power consumption are high, expensive, mainly contain Kutora company this product is provided.The technology that another kind is realized array VOA is to adopt polymer waveguide, utilize the high thermo-optical coeffecient of polymeric material, can make the Waveguide array VOA of thermo-optic effect, but polymeric waveguide devices driving power consumption is high, governing speed is slow, there is serious integrity problem in polymeric material particularly, do not obtain the extensive approval in market.
Current MEMS VOA technology realizes single channel VOA and has the advantage such as optical property, low cost, but realize array and have technical difficulty, and MEMS hyperchannel product is also to form by single MEMS VOA simple combination, have that volume is large, cost is high, the problems such as consistance is poor, are difficult to meet optical communication equipment and reduce volume, reduce the cost, reduce the requirement of controlling complexity.For such present situation, the invention provides a kind of array electric variable optical attenuator (VOA) based on MEMS technology, directly produce compact N(as 4,8,16,32,40 or 96 by single MEMS driver chip and a pair of fiber array) channel array VOA, meet the hyperchannel VOA demand of DWDM communication system.
Realize array for current MEMS VOA technology and have technical difficulty, be difficult to meet the present situation of optical communication equipment small size, low cost, the requirement of low control complexity, and the deficiency that waveguide array VOA cost is high, insertion loss is large, driving power consumption is high, nowadays in the urgent need to designing a kind of new variable optical attenuator (VOA), to address the aforementioned drawbacks.
Summary of the invention
Technical matters to be solved by this invention is: provide a kind of array electric variable optical attenuator, the advantage such as have small size, low single channel cost, good consistance, attenuation range is large, driving voltage is low.
In addition, the present invention also provides a kind of preparation method of array electric variable optical attenuator, can make the array electric variable optical attenuator that volume is little, single channel cost is low, consistance is good, attenuation range is large, driving voltage is low.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of array electric variable optical attenuator, described attenuator comprises: MEMS array light blocking driver chip, input optical fibre array, output optical fibre array;
Described input optical fibre array, output optical fibre array carry out direct optical alignment coupling, MEMS photoresistance lug-latch array in MEMS array light blocking driver chip is arranged in the gap of input optical fibre array, output optical fibre array, realize the optical signal power control of N paths, wherein, N >=2.
As a preferred embodiment of the present invention, described MEMS array light blocking driver chip comprises independently MEMS translation micro-displacement driver of M road, controls in order to drive MEMS photoresistance lug-latch array to realize the independent of multipath light signal power; Wherein, M >=N.
As a preferred embodiment of the present invention, described MEMS array light blocking driver chip is static broach driver, adopts static broach type of drive, realizes several translation motions to tens microns of MEMS photoresistance lug-latch array;
As a preferred embodiment of the present invention, the single photoresistance lug-latch of static broach driver drives of the every paths design of described MEMS array light blocking driver chip single movement direction; Also can be every two photoresistance lug-latches of static broach driver drives relative motion of two move toward one another of paths design, in order to reduce the driving voltage of MEMS array electric variable optical attenuator chip, or improve optical signal power control accuracy.
As a preferred embodiment of the present invention, described MEMS array light blocking driver chip is difference comb drive, in order to improve the voltage-cutoff characteristic of MEMS array electric variable optical attenuator.
As a preferred embodiment of the present invention, described MEMS photoresistance lug-latch array adopts the mode of blocking light path or deviation light path or light wave-front phase modulation to realize the decay to light signal, accordingly, the structure of MEMS photoresistance lug-latch is light barrier or wedge shape photoresistance lug-latch or phase modulated light dog catch;
The optical attenuation of light barrier reflects by light or the method such as absorption or light scattering loses the light signal being irradiated on light barrier, controls the luminous power of output optical fibre; The edge of a knife of light barrier is become linear or outer arcuate or arc or waveform;
Wedge shape photoresistance lug-latch, by the light signal deviation being irradiated on wedge shape photoresistance lug-latch is gone out to light path, is realized the optical power adjustment of output optical signal;
Phase modulated light dog catch comprises two regions of phase difference of pi phase place, and destructive interference occurs the light beam passing through from these two regions output optical fibre realizes the optical power adjustment of output optical signal.
As a preferred embodiment of the present invention; design encapsulation position limiting structure on described MEMS array light blocking driver chip, protection MEMS chip input optical fibre array, output optical fibre array between several to not damaged in the Direct couple processes in tens of microns of gaps.
As a preferred embodiment of the present invention, between described input optical fibre array, output optical fibre array, carry out direct coupling fiber, the optical fiber radical of input optical fibre array, output optical fibre array is no less than in MEMS array light blocking driver chip independently driver number, without optical microlens array, the gap of input optical fibre array, output optical fibre array is several to tens of microns;
MEMS array photoresistance lug-latch array, between the gap of input optical fibre array, output optical fibre array, is realized the decay to optical signal power by Control of Voltage MEMS array light blocking driver.
As a preferred embodiment of the present invention, described attenuator also comprises package casing;
Described MEMS array light blocking driver chip, input optical fibre array, output optical fibre array are placed in package casing and carry out level Hermetic Package, package casing adopts airtight material, the ribbon fiber of input optical fibre array, output optical fibre array is airtight ribbon fiber, airtight ribbon fiber and package casing carry out air-tight packaging, in level Hermetic Package cavity, be filled with inert gas or dry air, and put into drying agent.
As a preferred embodiment of the present invention, the structure of MEMS array light blocking driver chip can be unsymmetric structure or symmetrical structure, in the time adopting symmetrical structure, and the light hole that MEMS photoresistance lug-latch comprises tens of microns; Described MEMS array light blocking driver chip adopts static broach type of drive, and the size of controlling driving voltage drives the translation motion of MEMS photoresistance lug-latch several to tens microns, realizes optical fiber hot spot is not stopped to the stepless control stopping completely from critical.
A preparation method for above-mentioned array electric variable optical attenuator, described method comprises the steps:
(a) clean soi wafer, soi wafer comprises top silicon layer, intermediate oxide layer, substrate silicon;
(b) gluing, photoetching on soi wafer, then carries out ICP etching, and removes mask material;
(c) take two throwing monocrystalline silicon pieces as substrate, soi wafer top silicon layer is carried out to silicon-silicon bond with two throwing monocrystalline silicon piece I faces and close, obtain silicon-silicon bond and close sheet;
(d) silicon-silicon bond closes sheet and carries out high-temperature oxydation, form earth silicon mask, monocrystalline silicon piece II face gluing, photoetching, remove silicon-silicon bond and close the earth silicon mask layer exposing on sheet, then carry out KOH wet etching and remove the substrate silicon of SOI, monocrystalline silicon piece completes through corrosion simultaneously;
(e) intermediate oxide layer of removal soi wafer, gluing, photoetching, ICP etching is made boss;
(f) gluing, photoetching, ICP etching discharges comb structure, make MEMS array plane comb drive and low-light dog catch array, and stop at low-light on the silicon fiml of array and adopt hard mask technique evaporation optical reflection film or light absorping film, reduce the transmitted light of photoresistance lug-latch;
(g) carry out the scribing of MEMS disk, obtain physically separated MEMS array light blocking driver chip;
(h) the optical package step of MEMS array electric variable optical attenuator.
As a preferred embodiment of the present invention, described step h comprises the steps:
(h1) adopt the fiber array of optical fiber spacing 250 μ m or other spacing as input optical fibre array, output optical fibre array, the ribbon fiber that the ribbon fiber of fiber array FA is level Hermetic Package;
(h2) will input FA aims at MEMS array light blocking driver chip, make the position consistency of the edge of a knife of micro-light stopper in every input optical fibre and MEMS array driver chip, and the optical fiber hot spot of the edge of a knife of photoresistance lug-latch and input is in critical crossover position, regulate MEMS array light blocking driver chip to contact with input FA, and put glue and fix.
(h3) will export FA inserts in the corrosion hole of the MEMS array light blocking driver chip back side, FA carries out direct coupling fiber with input, regulation output FA is greater than but close to design gaps with the spacing of input FA, then regulate upper and lower position and the angle of FA, until two of two ends coupling fiber losses are simultaneously minimum in FA array fibre, by optical adjusting bracket, output FA is moved to the behind boss of MEMS array light blocking driver chip and contacted again, the spacing of input and output FA is the gap of design;
(h4) the corrosion through hole mid point glue from MEMS chip by output FA, will export FA and chip is fixed, and form the FA-chip-FA assembly being coupled and aligned, as the first assembly;
(h5) the first assembly is fixed on PCB substrate with glue, and adopts Wire Bonding Technology that the electrode of MEMS chip is drawn out on PCB or other base plate for packaging, form the second assembly;
(h6) the second assembly is fixed to glue on the base plate of seal box, on this base plate, has made sealing wire pin, terminal pins on the lead-in wire of PCB or other base plate for packaging and seal box base plate is carried out to Bonding;
(h7) the level Hermetic Package ribbon fiber of input FA and output FA is passed from the reserved opening of the both sides of seal box, in seal box, put into dry moisture absorption material, seal box and base plate are carried out to airtight welding or sealing-in;
(h8) encapsulation box is added to heat abstraction moisture, in dry nitrogen environment, the sealing ribbon fiber of input FA, output FA and encapsulation box sidewall are carried out to metal airtight welding, further utilize again fluid sealant to seal, guarantee that MEMS array light blocking driver chip is operated in airtight environment, avoids the impact of outside air humidity.
Array electric variable optical attenuator that the present invention proposes and preparation method thereof, its beneficial effect is:
1) single MEMS array driver chip is realized the DWDM optical signal power control of N passage (N=2 to 96 or larger), and volume is little, and single channel average unit cost is low;
2) adopt a pair of fiber array directly to carry out optical coupled, without optical microlens array, not only reduced technical difficulty, and significantly reduced packaging cost;
3) adopt fiber array directly to carry out optical coupled, realizing is once coupled and aligned can complete the optical coupled of hyperchannel VOA;
4) MEMS array driver chip adopts static plane comb drive, and manufacturing process is simple, driving power consumption is very low, high conformity, and driving voltage can be reduced in 5V;
5) compare with polymer waveguide array VOA with SOI waveguide, device light insertion loss of the present invention low (being less than 1dB, minimum 0.5dB), optical attenuation scope large (can reach 60dB), polarization correlated little, low in energy consumption (microwatt magnitude), reliability are high.
Accompanying drawing explanation
Fig. 1 is the structural representation of MEMS array electric variable optical attenuator.
Fig. 2 is the light path schematic diagram of MEMS array electric variable optical attenuator.
Fig. 3 is the luminous power control principle drawing of MEMS array electric variable optical attenuator.
Fig. 4 a is the structural representation of light barrier photoresistance lug-latch.
Fig. 4 b is the structural representation of wedge shape photoresistance lug-latch.
Fig. 4 c is the structural representation of phase modulated light dog catch.
Fig. 5 a is the structural representation of the knife edge structure of outer arcuate light barrier.
Fig. 5 b is the structural representation of the knife edge structure of arc light barrier.
Fig. 5 c is the structural representation of the knife edge structure of waveform light barrier.
Fig. 6 a is the structural representation of the MEMS array light blocking driver chip of symmetrical structure.
Fig. 6 b is the structural representation (light stopper is in critical not blocking position) of the MEMS array light blocking driver chip of unsymmetric structure.
Fig. 6 c is the structural representation (light stopper is in optical fiber hot spot blocking position) of the MEMS array light blocking driver chip of unsymmetric structure.
Fig. 7 a to Fig. 7 f is respectively the schematic diagram of the inventive method step a to step f.
Embodiment
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.
The invention provides a kind of array electric variable optical attenuator (VOA) based on MEMS technology, directly produce compact N(as 4,8,16,32,40,96 or larger by single MEMS driver chip and a pair of fiber array) channel array VOA, the advantage such as have small size, low single channel cost, good consistance, attenuation range is large, driving voltage is low, can meet the hyperchannel VOA demand of DWDM communication system.
MEMS array electric variable optical attenuator provided by the invention comprises pcb board 14, MEMS array light blocking driver chip 11, an input FA(is input optical fibre array) 12, an output FA(be output optical fibre array) 13, level Hermetic Package structure (as fixing glue 15), pin one 6, as shown in Figure 1.The direct optical alignment coupling of input FA12, output FA13, MEMS array light blocking driver chip is placed in the gap of input FA12, output FA13, and carry out level Hermetic Package, realize the optical signal power control of N passage (N=2 to 96 or larger), the multichannel optical signal power control that can be applicable to DWDM optical fiber telecommunications system, its light path schematic diagram as shown in Figure 2.
In the present invention, the luminous power control principle of MEMS array electric variable optical attenuator is the amount of the stopping control of the hot spot to input, output optical fibre based on MEMS photoresistance lug-latch 18, realizes the continuous adjusting to optical coupling efficiency, as shown in Figure 3.MEMS photoresistance lug-latch 18 can adopt various ways to realize the decay to light signal, comprise and block light path, deviation light path, light wave-front phase modulation, the structure of its photoresistance lug-latch is respectively light barrier, wedge shape photoresistance lug-latch and several structures of phase modulated light dog catch, as shown in Fig. 4 a to Fig. 4 c.The optical attenuation of light barrier reflects by light or the method such as absorption or light scattering loses the light signal being irradiated on light barrier, controls the luminous power of output optical fibre.The knife edge structure of light barrier can be taked various structures, as linear, outer arcuate, arc, waveform etc., rear three kinds of knife edge structures as shown in Figure 5 a to 5 c shown in, can improve the VOA optical characteristics in the time of high attenuation amount.Wedge shape photoresistance lug-latch, by the light signal deviation being irradiated on wedge shape photoresistance lug-latch is gone out to light path, is realized the optical power adjustment of output optical signal.Phase modulated light dog catch comprises two regions of phase difference of pi phase place, and destructive interference occurs the light beam passing through from these two regions output optical fibre realizes the optical power adjustment of output optical signal.
Described MEMS array light blocking driver chip comprises independently MEMS static translation micro-displacement driver of M road (M >=N), drives MEMS photoresistance lug-latch to realize the independent of multipath light signal power and controls; The structure of MEMS array light blocking driver chip comprises various ways, as symmetrical structure, unsymmetric structure, as shown in Fig. 6 a to Fig. 6 c, the light hole 63 that wherein the photoresistance lug-latch 18 of symmetrical structure MEMS array driver chip comprises one tens of microns, photoresistance lug-latch 18 is suspended on and is supported silicon beam 19 by symmetrical folding elastic beam, plane comb drive 64 is positioned at the two ends of photoresistance lug-latch 18, drives photoresistance lug-latch 18 translation motion planar, as shown in Figure 6 a.Drive 18 translation motions of MEMS photoresistance lug-latch several to tens microns by controlling the size of driving voltage, realize optical fiber hot spot 17 is not stopped to the stepless control stopping completely from critical; As Fig. 6 b and Fig. 6 c represent respectively the photoresistance lug-latch of unsymmetric structure MEMS array light blocking driver chip and suitable position and the variation thereof of optical fiber hot spot 17, Fig. 6 b represents initial position, optical fiber hot spot 17 is not blocked but very approaches and be blocked, be critically not stop, the straight-through output optical fibre that is coupled into of light signal, now, to attenuated optical signal minimum, be the insertion loss of VOA.Fig. 6 c represents that optical fiber hot spot 17 parts are blocked, and now decay to light signal.
Described MEMS array light blocking driver chip, its static broach driver can also adopt difference comb drive, to improve the voltage-attenuation characteristic of device; Its each passage can also be designed to two photoresistance lug-latches of static broach driver drives relative motion of two move toward one another, to reduce the driving voltage of MEMS array electric variable optical attenuator, or improves optical signal power control accuracy.
On described MEMS array light blocking driver chip, design packaging protection structure; this packaging protection structure is on the supporting frame of MEMS driver, to make protection boss; boss exceeds movable structure number of planes micron; input FA can directly contact with chip supporting frame; but can not touch MEMS movable structure, can realize several not damaged to MEMS chip in the Direct couple processes in tens of microns of gaps.Below the movable structure of MEMS chip back, make equally and made protection boss, when guaranteeing output FA and exporting FA near coupling, can directly contact with MEMS chip back, but can not touch MEMS movable structure, thus protection MEMS chip.
Described MEMS array electric variable optical attenuator, its input, the direct coupling fiber of output FA, FA between gap be several to tens of micron, the fiber count of FA ribbon fiber is that P(is no less than in MEMS array driver chip independently driver and counts M), without optical microlens array, the coupling fiber insertion loss that FA is right can be less than 1dB, and array MEMS photoresistance lug-latch is arranged in the gap that FA is right, realizes the decay to optical signal power by the translation motion of Control of Voltage MEMS photoresistance lug-latch.
The optical fiber spacing d of described FA can adopt 127 μ m or the 250 μ m of standard, and also m), the spacing of d and MEMS array light blocking driver is consistent customizable optical fiber spacing d(125 μ m≤d≤2000 μ.The material of FA adopts silicon, also can adopt quartz, and its angled end-face polishing angle is 3-10 °, and preferably 8 °, and the antireflection film of evaporation optical communicating waveband.
Input, the output FA of described MEMS array electric variable optical attenuator approach vertical with MEMS array light blocking driver plane, the oblique polished end faces of FA and MEMS array light blocking driver plane parallel, FA optical fiber arrangement direction is consistent with the orientation of array light blocking driver, guarantees the consistance of array VOA characteristic.The gap of input, output FA polished end faces is several to tens of microns, and this gap must be greater than the thickness approximate number micron of MEMS photoresistance lug-latch.Input, output FA polished end faces can not contact with the micro-light barrier of MEMS, and its distance, between sub-micron is to several microns, also will guarantee not touch FA in MEMS photoresistance lug-latch motion process, and this can realize by the protection boss of MEMS chip.
Described MEMS array electric variable optical attenuator, whole device package, in metal or glass or ceramic seal cavity, is realized level Hermetic Package, guarantees the reliability during device lifetime.
Enforcement of the present invention comprises that MEMS array light blocking driver chip is manufactured and two parts of optical package of MEMS array electric variable optical attenuator (VOA), embodiment given here is only a possible specific embodiments, does not affect claim of the present invention.
1) MEMS array light blocking driver chip is manufactured embodiment
The present embodiment describes with the manufacturing process flow of MEMS array light blocking driver chip, and its technological parameter can have multiple value, only describes as an example of common value example here.MEMS array light blocking driver chip MEMS structure is as shown in Fig. 6 a to Fig. 6 c, and technical process as shown in Figure 7.
The main technique of MEMS array driver chip is that silicon-silicon bond closes and translation broach manufacturing process, is technology ripe in MEMS bulk silicon technological.Technical process is as follows:
(a) adopt commercial soi wafer, top silicon layer is heavily doped low-resistance silicon, thickness 20 μ m, intermediate oxide layer 2 μ m, and substrate silicon 450 μ m, complete soi wafer and clean;
(b) gluing of soi wafer, photoetching, ICP etching, etching depth approximately 3 μ m, and remove mask material;
(c) two throwing monocrystalline silicon pieces are substrate, and thickness approximately 450 μ m carry out silicon-silicon bond by the top silicon layer of soi wafer with two throwing monocrystalline silicon piece I faces and close, and obtain silicon-silicon bond and close sheet;
(d) silicon-silicon bond closes sheet and carries out high-temperature oxydation, form earth silicon mask, monocrystalline silicon piece II face gluing, photoetching, remove silicon-silicon bond and close the earth silicon mask layer exposing on sheet, then carry out KOH wet etching and remove the substrate silicon of SOI, monocrystalline silicon piece completes through corrosion simultaneously;
(e) intermediate oxide layer of removal soi wafer, gluing, photoetching, ICP etching 3 μ m make boss;
(f) gluing, photoetching, ICP etching discharges comb structure, make MEMS array plane comb drive and low-light dog catch array, broach gap 2.5 μ m, broach width 4 μ m, broach thickness 14 μ m, and stop at low-light on the silicon fiml of array and adopt hard mask technique evaporation Au or Ti reflectance coating, reduce the transmitted light of photoresistance lug-latch.
(g) finally carry out the scribing of MEMS disk, obtain physically separated MEMS array light blocking driver chip.The channel pitch of MEMS low-light dog catch array is 250 μ m.
(h) MEMS array electric variable optical attenuator (VOA) carries out optical package.In the present embodiment, the optical package of MEMS array electric variable optical attenuator (VOA) adopts level Hermetic Package structure, and as shown in Figure 1, encapsulation step comprises:
(h1) adopt the FA of optical fiber spacing 250 μ m as I/O fiber array, the ribbon fiber that the ribbon fiber of FA is level Hermetic Package;
(h2) will input FA aims at MEMS array light blocking driver chip, make the position consistency of the edge of a knife of micro-light stopper in every input optical fibre and MEMS array driver chip, and the optical fiber hot spot of the edge of a knife of photoresistance lug-latch and input is in critical crossover position, regulate MEMS array light blocking driver chip to contact with input FA, and put glue and fix;
(h3) will export FA inserts in the corrosion hole of the MEMS array light blocking driver chip back side, FA carries out direct coupling fiber with input, regulation output FA is about 25-30 μ m with the spacing of input FA, then regulate upper and lower position and the angle of FA, until two of two ends coupling fiber losses are simultaneously minimum in FA array fibre, by optical adjusting bracket, output FA is moved to the behind boss of MEMS array light blocking driver chip and contacted again, the spacing of input and output FA is 20 μ m gaps of design, identical with the top layer silicon thickness of SOI material;
(h4) the corrosion through hole mid point glue from MEMS chip by output FA, will export FA and chip is fixed, and form the FA-chip-FA assembly being coupled and aligned, as the first assembly;
(h5) the first assembly is fixed on PCB substrate with glue, and adopts Wire Bonding Technology that the electrode of MEMS chip is drawn out on PCB substrate, form the second assembly;
(h6) the second assembly is fixed to glue on the base plate of sealing metal box, on this base plate, has made sealing wire pin, terminal pins on the lead-in wire of PCB substrate and sealing metal box plate is carried out to Bonding;
(h7) the level Hermetic Package ribbon fiber of input FA and output FA is passed from the reserved opening of the both sides of sealing metal box, in can, put into dry moisture absorption material, sealing metal box is carried out to parallel soldering and sealing with base plate, realize airtight welding;
(h8) package metals box is added to heat abstraction moisture, in dry nitrogen environment, the sealing ribbon fiber of I/O FA and package metals box sidewall are carried out to metal airtight welding (as soldering or laser bonding), further utilize again fluid sealant to seal, guarantee that MEMS chip operation, in airtight environment, avoids the impact of outside air humidity.
Above encapsulation is recommended in clean packaging environment to be carried out, to improve device package yield rate.
In sum, the array electric variable optical attenuator that the present invention proposes, the advantage such as there is small size, low single channel cost, good consistance, attenuation range is large, driving voltage is low.
Here description of the invention and application is illustrative, not wants scope of the present invention to limit in the above-described embodiments.Here the distortion of disclosed embodiment and change is possible, and for those those of ordinary skill in the art, the various parts of the replacement of embodiment and equivalence are known.Those skilled in the art are noted that in the situation that not departing from spirit of the present invention or essential characteristic, and the present invention can be with other form, structure, layout, ratio, and realize with other assembly, material and parts.In the situation that not departing from the scope of the invention and spirit, can carry out other distortion and change to disclosed embodiment here.
Claims (12)
1. a MEMS array electric variable optical attenuator, is characterized in that, described attenuator comprises: MEMS array light blocking driver chip, input optical fibre array, output optical fibre array;
Described input optical fibre array, output optical fibre array carry out direct optical alignment coupling, MEMS photoresistance lug-latch array in MEMS array light blocking driver chip is arranged in the gap of input optical fibre array, output optical fibre array, realize the optical signal power control of N paths, wherein, N >=2.
2. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
Described MEMS array light blocking driver chip comprises independently MEMS translation micro-displacement driver of M road, controls in order to drive MEMS photoresistance lug-latch array to realize the independent of multipath light signal power; Wherein, M >=N.
3. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
Described MEMS array light blocking driver chip is static broach driver, adopts static broach type of drive, realizes several translation motions to tens microns of MEMS photoresistance lug-latch array.
4. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
The single photoresistance lug-latch of static broach driver drives of the every paths design of described MEMS array light blocking driver chip single movement direction; Or two photoresistance lug-latches of static broach driver drives relative motion of two move toward one another of every paths design, in order to reduce the driving voltage of MEMS array electric variable optical attenuator chip, or improves optical signal power control accuracy.
5. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
Described MEMS array light blocking driver chip adopts difference comb drive, in order to improve the voltage-cutoff characteristic of MEMS array electric variable optical attenuator.
6. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
Described MEMS photoresistance lug-latch array adopts the mode of blocking light path or deviation light path or light wave-front phase modulation to realize the decay to light signal, and accordingly, the structure of MEMS photoresistance lug-latch is light barrier or wedge shape photoresistance lug-latch or phase modulated light dog catch;
The optical attenuation of light barrier reflects by light or the method such as absorption or light scattering loses the light signal being irradiated on light barrier, controls the luminous power of output optical fibre; The edge of a knife of light barrier is become linear or outer arcuate or arc or waveform;
Wedge shape photoresistance lug-latch, by the light signal deviation being irradiated on wedge shape photoresistance lug-latch is gone out to light path, is realized the optical power adjustment of output optical signal;
Phase modulated light dog catch comprises two regions of phase difference of pi phase place, and destructive interference occurs the light beam passing through from these two regions output optical fibre realizes the optical power adjustment of output optical signal.
7. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
Design encapsulation position limiting structure on described MEMS array light blocking driver chip, protection MEMS chip input optical fibre array, output optical fibre array between several to not damaged in the Direct couple processes in tens of microns of gaps.
8. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
Between described input optical fibre array, output optical fibre array, carry out direct coupling fiber, the optical fiber radical P of input optical fibre array, output optical fibre array is no less than in MEMS array light blocking driver chip independently driver and counts M, without optical microlens array, the gap between input optical fibre array, output optical fibre array is several to tens of microns;
MEMS array photoresistance lug-latch array, between the gap of input optical fibre array, output optical fibre array, is realized the decay to optical signal power by the motion of Control of Voltage MEMS array light blocking driver.
9. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
Described attenuator also comprises package casing;
Described MEMS array light blocking driver chip, input optical fibre array, output optical fibre array are placed in package casing and carry out level Hermetic Package, package casing adopts airtight material, the ribbon fiber of input optical fibre array, output optical fibre array is airtight ribbon fiber, airtight ribbon fiber and package casing carry out air-tight packaging, in level Hermetic Package cavity, be filled with inert gas or dry air, and put into drying agent.
10. MEMS array electric variable optical attenuator according to claim 1, is characterized in that:
The structure of MEMS array light blocking driver chip can be unsymmetric structure or symmetrical structure, in the time adopting symmetrical structure, and the light hole that MEMS photoresistance lug-latch comprises tens of microns; Described MEMS array light blocking driver chip adopts static broach type of drive, and the size of controlling driving voltage drives the translation motion of MEMS photoresistance lug-latch several to tens microns, realizes optical fiber hot spot is not stopped to the stepless control stopping completely from critical.
The preparation method of the described MEMS array electric of one of 11. 1 kinds of claims 1 to 10 variable optical attenuator, is characterized in that, described method comprises the steps:
(a) clean soi wafer, soi wafer comprises top silicon layer, intermediate oxide layer, substrate silicon;
(b) gluing, photoetching on soi wafer, then carries out ICP etching, and removes mask material;
(c) take two throwing monocrystalline silicon pieces as substrate, soi wafer top silicon layer is carried out to silicon-silicon bond with two throwing monocrystalline silicon piece I faces and close, obtain silicon-silicon bond and close sheet;
(d) silicon-silicon bond closes sheet and carries out high-temperature oxydation, form earth silicon mask, monocrystalline silicon piece II face gluing, photoetching, remove silicon-silicon bond and close the earth silicon mask layer exposing on sheet, then carry out KOH wet etching and remove the substrate silicon of SOI, monocrystalline silicon piece completes through corrosion simultaneously;
(e) intermediate oxide layer of removal soi wafer, gluing, photoetching, ICP etching is made boss;
(f) gluing, photoetching, ICP etching discharges comb structure, make MEMS array plane comb drive and low-light dog catch array, and stop at low-light on the silicon fiml of array and adopt hard mask technique evaporation optical reflection film or light absorping film, reduce the transmitted light of photoresistance lug-latch;
(g) carry out the scribing of MEMS disk, obtain physically separated MEMS array light blocking driver chip;
(h) the optical package step of MEMS array electric variable optical attenuator.
12. MEMS array electric variable optical attenuators according to claim 11, is characterized in that:
Described step h comprises the steps:
(h1) adopt fiber array FA as input optical fibre array, output optical fibre array, the ribbon fiber that the ribbon fiber of fiber array FA is level Hermetic Package;
(h2) will input FA aims at MEMS array light blocking driver chip, make the position consistency of the edge of a knife of micro-light stopper in every input optical fibre and MEMS array driver chip, and the optical fiber hot spot of the edge of a knife of photoresistance lug-latch and input is in critical crossover position, regulate MEMS array light blocking driver chip to contact with input FA, and put glue and fix;
(h3) will export FA inserts in the corrosion hole of the MEMS array light blocking driver chip back side, FA carries out direct coupling fiber with input, regulation output FA is greater than but close to design gaps with the spacing of input FA, then regulate upper and lower position and the angle of FA, until two of two ends coupling fiber losses are simultaneously minimum in FA array fibre, by optical adjusting bracket, output FA is moved to the behind boss of MEMS array light blocking driver chip and contacted again, the spacing of input and output FA is the gap of design;
(h4) the corrosion through hole mid point glue from MEMS chip by output FA, will export FA and chip is fixed, and form the FA-chip-FA assembly being coupled and aligned, as the first assembly;
(h5) the first assembly is fixed on PCB substrate with glue, and adopts Wire Bonding Technology that the electrode of MEMS chip is drawn out on PCB or other base plate for packaging, form the second assembly;
(h6) the second assembly is fixed to glue on the base plate of seal box, on this base plate, has made sealing wire pin, terminal pins on the lead-in wire of PCB or other base plate for packaging and seal box base plate is carried out to Bonding;
(h7) the level Hermetic Package ribbon fiber of input FA and output FA is passed from the reserved opening of the both sides of seal box, in seal box, put into dry moisture absorption material, seal box and base plate are carried out to airtight welding;
(h8) encapsulation box is added to heat abstraction moisture, in dry nitrogen environment, the sealing ribbon fiber of input FA, output FA and encapsulation box sidewall are carried out to airtight welding or sealing-in, further utilize again fluid sealant to seal, guarantee that MEMS array light blocking driver chip is operated in airtight environment, avoids the impact of outside air humidity.
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