CN103872217B - High-power LED light source packaging body - Google Patents
High-power LED light source packaging body Download PDFInfo
- Publication number
- CN103872217B CN103872217B CN201410096052.3A CN201410096052A CN103872217B CN 103872217 B CN103872217 B CN 103872217B CN 201410096052 A CN201410096052 A CN 201410096052A CN 103872217 B CN103872217 B CN 103872217B
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- China
- Prior art keywords
- packaging body
- heat conductive
- led
- metal
- insulating layer
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of high-power LED light source packaging body, belong to the technical field of semiconductor lighting, described high-power LED light source packaging body comprises metal substrate, on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and on described resin insulating barrier, be formed with metal pattern circuit, described high heat conductive insulating layer is formed with metallic circuit and large-power LED light bead or chip, and the metal pattern circuit on described resin insulating barrier is connected by metal connector with the metallic circuit on described high heat conductive insulating layer. The present invention by arranging Ceramic insulator and the insulation resin sheet of different thermal conductivity factors and unlike material on metal substrate, the LED encapsulation insulating metal substrate of the high reliability that thermal diffusivity significantly improves can be provided, and good thermal conductivity can reduce the some brightness temperature of LED lamp pearl and chip, thereby LED lamp pearl or the chip of high-power more high brightness can be installed.
Description
Technical field
The invention belongs to the technical field of semiconductor lighting, in particular, the present invention relates to one and be convenient to high efficiency and heat radiation applicationIn the light source module of great power LED.
Background technology
LED (light emitting diode) technology starts from late 1960s, through about semicentennial development, as the novel light of oneSource, has obtained unprecedented owing to having the unrivaled advantages of conventional light source such as energy-saving and environmental protection, the life-span is long, toggle speed is fastDevelopment. Great power LED solid-state illumination is to have continued since incandescent lamp invention, most important illumination revolution. Semiconductor LED material can be byElectric energy is converted into luminous energy, has different from traditional lighting light source maximum, and luminous efficiency is high, and energy consumption is only ordinary incandescent lamp1/8th; And the life-span is long, be typically energy-conservation, environmental protection illumination without stroboscopic, without infrared and ultra-violet radiation etc., at presentStreet lighting, industrial and mineral and public place etc. are widely used in.
Along with the develop rapidly of electronics industry, the volume of electronic product is more and more less, is accompanied by LED current strength and luminous quantityIncrease, the caloric value of LED chip also rises thereupon, for high-capacity LED, input energy sources 80% all with hot form consumptionFall. If the heat not in time chip being sent is derived and dissipated, a large amount of heats will accumulate in LED inside, will cause chipTemperature-rise effect, the luminous efficiency of LED will sharply decline, and life and reliability also will be had a greatly reduced quality; The high heat of high temperature in additionTo make the inner mechanical stress that produces of LED encapsulating structure, also may cause quality problems. Therefore along with the merit of single great power LEDImproving constantly of rate density, to the design of high-power LED encapsulation material and structure, also becomes one of field of semiconductor illumination day by dayIndividual huge challenge.
Initial LED illuminating product, its LED light source is directly packaged in lamp body inside, because its lamp body material mostly is conducting metal material,In the time that circuit connects, must consider the insulation protection of circuit, waste time and energy and security, stability not high, therefore occurredThe encapsulation wiring board of LED light source, is first about to plurality of LEDs arrange and be packaged in monoblock substrate, and on substrate prewiring with to envelopeLED light source thereon of dress carries out circuit connection, then this substrate is placed in to lamp body inside connects into lighting circuit. At present, LEDThe applied LED substrate of lighting field, distinguishes and mainly contains conventional PCB substrate (being mainly resinae substrate), pottery from materialMatter substrate and insulated metal matter substrate (being mainly aluminium alloy base plate), and for the encapsulation of great power LED, insulating metal substrate withoutBe suspected to be the preferred plan that solves heat dissipation problem.
Traditional insulating metal substrate is made up of metal substrate, insulating barrier and conductive layer (being metal layer). And insulating barrier is itIn key technology, it mainly plays the function of bonding, insulation and heat conduction. Insulating barrier is heat conduction maximum in power model structureBarrier, its heat-conductive characteristic is better, and the diffusion of the heat that produces while being more conducive to device operation is also just more conducive to lowering deviceThe running temperature of part, improves the power load of module thereby reach, and reduces volume, life-extending and improve the order of power output. As preferably, adopt high-termal conductivity aluminium nitride material as thermal insulation layer, the heat of LED can be by high-termal conductivityHeat is reached metal substrate by aluminium nitride ceramics layer. Although its thermal conductivity and heat resistance are significantly better than dielectric resin material, Neng GoushiExisting high power LED package, but its cost costliness not only, and there is the problem that is difficult to make large-sized goods.
Summary of the invention
In order to solve the problems of the technologies described above, the object of the present invention is to provide a kind of high-power LED light source packaging body. Adopt thisBright described high-power LED light source packaging body not only cost relatively low and also have high thermal conductivity, ageing-resistant, resist wear andThe advantage of dependable performance.
High-power LED light source packaging body of the present invention, comprises metal substrate, it is characterized in that: shape on described metal substrateBecome to have resin insulating barrier and high heat conductive insulating layer, and on described resin insulating barrier, be formed with metal pattern circuit, described high heat conductionInsulating barrier is formed with metallic circuit and large-power LED light bead or chip, the metal pattern circuit on described resin insulating barrier and instituteThe metallic circuit of stating on high heat conductive insulating layer connects by metal connector; And described metal connector is for adopting silver, gold or copperLead-in wire, bulge and/or bridge material; The thermal conductivity of described high heat conductive insulating layer is 50～500W/mK, and thickness is 20～200 μ m;The thermal conductivity of described resin insulating barrier is 0.5～30W/mK, and thickness is 20～200 μ m.
Wherein, the power of single LED lamp pearl or chip is more than 1W, more than being preferably 3W, more preferably more than 5W.
Wherein, on described metal substrate, there is multiple resin insulating barriers and multiple high heat conductive insulating layer; And described resin insulating barrierBetween adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Described resin insulating barrier withBetween described high heat conductive insulating layer, adjacent setting or interval arrange.
Wherein, described metal substrate has the steel of aluminium or copper to make by plating, and described steel is selected from mild steel, heat-resisting steel or stainless steelIn one.
Wherein, described metallic matrix is through surface treatment procedure, described surface treatment procedure comprise roughening treatment, pickling orAny one in alkaline etching operation.
Wherein, described metal base surface forms the anodic alumina films of electric insulation in its surface through surface treatment.
Wherein, described LED lamp pearl or LED chip are by wave soldering, reflow soldering, eutectic welding or use electroconductive binderBe connected with metallic circuit.
Wherein, on described high heat conductive insulating layer, be formed with metallic circuit and pad, described LED lamp pearl or LED chip are combined in welderingOn dish, and described pad and the electric connection of described metallic circuit.
Wherein, described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.
Compared with prior art, technical scheme of the present invention has following beneficial effect:
The present invention by arranging Ceramic insulator and the insulation resin of different thermal conductivity factors and unlike material on metal substratePlate, can provide the LED encapsulation insulating metal substrate of the high reliability that thermal diffusivity significantly improves, and good heat conductivilityEnough reduce the some brightness temperature of LED lamp pearl and chip, thereby the LED chip of high-power more high brightness can be installed; In addition thisBright also by the processing to metal substrate, can form on the surface of metal substrate the high pressure resistant insulating barrier puncturing, for example special placeAnodised aluminium thin layer or the organic insulation thin layer of reason, further improved the high pressure resistant breakdown performance of encapsulating structure, thereby realizedThe more high brightness of LED.
Detailed description of the invention
High-power LED light source packaging body of the present invention, comprises metal substrate, on described metal substrate, is formed with insulation resinLayer and high heat conductive insulating layer, and on described resin insulating barrier, be formed with metal pattern circuit, described high heat conductive insulating layer is formed withMetallic circuit and large-power LED light bead or chip, the metal pattern circuit on described resin insulating barrier and described high heat conductive insulatingMetallic circuit on layer connects by metal connector. Described LED lamp pearl or LED chip by wave soldering, reflow soldering,Eutectic welding or use electroconductive binder are connected with plain conductor. On described high heat conductive insulating layer, can also be formed with gold in addition simultaneouslyBelong to circuit and pad, described LED lamp pearl or LED chip are combined on pad, and described pad and described metallic circuit electrically connectConnect. Described metal connector can be for example the Bonding of employing silver, gold or copper, bulge, bridge material etc.; In order to protectCard electric conductivity, is preferably silver or silver alloy. Specifically, for example can adopt solder, solder brazing, high-termal conductivity binding agentDeng being electrically connected, be preferably solder.
In the present invention, for the metal substrate that obtains having good rigidity also can use plating to have the steel of aluminium or copper as metalSubstrate, described steel can be selected mild steel, heat-resisting steel or stainless steel, considers preferred heat resisting steel or stainless from stable on heating angleSteel. As the example of heat resisting steel, for example can select to contain the steel alloy of chromium and/or nickel, cobalt, tungsten, can according to institutional frameworkBe divided into austenite, ferrite, martensitic. As stainless example, it refers to more than 11% chromium or contains 11%Above chromium also contains the steel of nickel. Stainless material is categorized as austenite, ferrite, martensitic. As austeniteBe that stainless example for example can use SUS304, SUS316, SUS310, SUS309, SUS317, SUS321 or SUS347Deng. Example as ferrite-group stainless steel for example can use SUS430, SUS405, SUS410, SUS436 or SUS444.Example as martensitic stainless steel for example can use SUS403, SUS440, SUS420 or SUS410 etc. If usedThe preferred austenite of flexible base, board or ferrite. The thickness of metal substrate can be selected according to actual needs, for example canFrom 0.1 millimeter to tens of millimeters. Described substrate preferably uses aluminum or aluminum alloy in the present invention, as preferably containing metal not of aluminium alloyBetween the aluminium alloy of compound. Be preferably specifically that impurity is few, the aluminium of more than 99 quality % purity. For example, preferred 99.99wt%Al, 99.0%Al etc. Or, also can add the element that is difficult for producing intermetallic compound. For example can add the aluminium of appropriate magnesiumMagnesium alloy. Except magnesium, also can select the interpolation element that the solid solubility limit such as copper or silicon is high.
As preferably, described metallic matrix is through surface treatment procedure, described surface treatment procedure can comprise roughening treatment,The various operations such as pickling, alkaline etching. As the exemplary process that is used to form coarse surface, can enumerate to metal substrate successivelyImplement mechanicalness roughened processing, alkaline etching processing, adopt sour cleaning treatment and used the roughened place of electrochemistry of electrolyteThe methods such as reason; Metal substrate is implemented repeatedly the roughened processing of mechanicalness, alkaline etching processing, adopted sour dirty removing processing and useThe method of the roughened processing of electrochemistry of different electrolyte; But the present invention is not limited to these. Can be inorganic acid as acidAnd/or organic acid, described inorganic acid can be for example sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid etc.; Described organic acid is for example passableFor carboxylic acid or sulfonic acid, such as formic acid, acetic acid, tartaric acid, oxalic acid, malic acid, ascorbic acid and benzoic acid etc. As oftenWith alkali can be for example alkali-metal hydroxide, for example NaOH or potassium hydroxide, also can use tetramethyl hydrogen in additionThe organic bases such as amine-oxides, trimethyl (ethoxy) ammonium hydroxide. In order to reduce metallic matrix in pickling or alkaline etching processing procedureThe etch quantity of material can contain anticorrodent in described aqueous slkali or acid solution, can contain in addition surfactant withAnd other component such as chelating agent. In addition, described surface treatment, can also be to form electric insulation at described metal base surfaceAnodic alumina films or the organic film of electric insulation, thereby improve the high pressure resistant breakdown strength of described metallic matrix.
The described high-power power that refers to single LED lamp pearl or chip is more than 1W in the present invention, be preferably 3W withUpper, more preferably, more than 5W. And described LED refers to Light-Emitting Diode, it refers to have connecing to diode power supplyThe luminescent diode component in contact area territory. Multi-form semiconductor light-emitting-diode can be by one or more III family element and oneOr the PN junction of multiple V group element (III-V semiconductor) forms. The example that can be used for the III-V semi-conducting material of LED comprises: nitrogenCompound, as gallium nitride or InGaN; And phosphide is as InGaP. Also can use the III-V material of other type,Can also use the inorganic material of other family. In the present invention, described LED can be encapsulation or unpackaged structure, bagDraw together for example LED of LED tube core, LED lamp pearl, LED chip and other structure. LED chip (COB) refers to and is directly installed onLED tube core in circuit substrate. Term LED also comprises with fluorescent powder packaging or the LED relevant to fluorescent material, wherein, glimmeringLight powder changes the light being sent by LED into the light of different wave length. Can pass through wire-bonded, coil type certainly with being electrically connected of LEDMoving joint (TAB) or flip-chip engage to form. LED can be top light emitting, and for example US5 is disclosed in 998,935ALED, or LED can be lateral emitting, for example disclosed LED in US2004/233665A1. In the present invention,Described LED can be chosen as with any required wavelength emission, as in red, green, blue, ultraviolet or far-infrared spectrum districtMiddle transmitting. In LED array, each LED can launch in same spectral regions, or can in different spectral regions, send outPenetrate. Different LED can be used for producing different colors, and wherein, the color of the light of being launched by light-emitting component is selectable.The independent control of different LED is caused to the color of the light that can control transmitting. In addition, if need white light, can provideThe LED of a large amount of transmitting different colours light, the effect of its combination is that transmitting beholder is perceived by is white light. Generation white lightOther method is to use one or more to launch the relatively LED of short wavelength's light, and use fluorescent material wavelength shifter willThe light of transmitting is converted to white light. White light is to stimulate the photoreceptor of human eye to think " white " to produce common beholderThe light of outward appearance. This white light can be partial to redness (being commonly referred to warm white light) or deflection blue (being commonly referred to cold white light).
In the present invention, be 50～500W/mK as the thermal conductivity of the described high heat conductive insulating layer in the present invention. Described high heat conductionThe thickness of insulating barrier is preferably 20～200 μ m. Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material,As ceramic material can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silica, silicon nitride,Sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride. Described ceramic material can be by cutting in the present inventionThe ceramic wafer of firing is also welded on metal substrate of the present invention, and described welding method can be for example the method for soldering,Such as solder, solder brazing or active soldering etc. Described ceramic material can also form method system by original position in the present inventionStandby obtaining, for example, by vacuum coating method, for example conventional physical gas-phase deposite method or chemical gaseous phase depositing process are prepared intoArrive. As example for example evaporation, sputter or the ion-plating deposition method of physical vapour deposition (PVD).
In the present invention, as preferably, described resin insulating barrier is the tree that contains thermosetting resin, curing agent and inorganic fillerFat solidfied material. In addition,, in the hardening resin composition that is used to form insulating barrier, can also can also use and urge as requiredAgent, silane coupling agent, metatitanic acid lipid coupling agent, stabilizing agent and curing accelerator etc. As inorganic filler, preferably toolHave the good inorganic filler of electrical insulating property and heat conductivity, for example can use silica, aluminium oxide, aluminium nitride, silicon nitride,Boron nitride etc. For keeping suitable mobility, preferably 5～15wt% of the content of the inorganic filler in insulating barrier. Inorganic fillerGranularity is better to comprise two kinds of granularities that average grain diameter is 0.6 μ m～2.4 μ m and 5 μ m～20 μ m. By average grain diameter is largerCorase particles and the less particulate of average grain diameter mix, during with the each particulate of independent use compared with, can realize more filling, energyEnough obtain good heat conductivity. In addition, shape of particle can be that pulverize, spherical or lepidiod.
Metal substrate and anodic alumina films
Described metal substrate is the steel that plating has aluminium lamination in the present embodiment, and described steel can be selected mild steel, heat resisting steel or notRust steel, considers preferred heat-resisting steel or stainless steel from stable on heating angle. On described aluminium lamination, be formed with anodic alumina films; DescribedThe thickness of aluminium lamination is 0.5～10mm, and the thickness of anodic alumina films is 10～20 μ m; The insulation of described anodic alumina films is durableTime is greater than 1000 hours, and the durable time of described insulation refers under 50 DEG C, the condition of 85%RH and executes on anodic alumina filmsAdd the DC voltage of 100V, and resistance value is dropped to 106Time below Ω.
The preparation method of described anode oxide film is as follows: first have the steel of aluminium lamination to clean and scale removal to plating, then at lemonIn lemon aqueous acid, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20～35g/L, the 6-of 3～5g/LAmion acetic acid, the hydrogen peroxide of 0.5～1.0g/L, the Triammonium citrate of 3～5g/L; Liquid temperature be 10～20 DEG C, current density be 0.5～1A/dm2, electrolytic treatments 20～30min. Adopt above-mentioned anode oxidation method, owing to adopting citric acid as Treatment Solution, andAdded therein appropriate hydrogen peroxide and 6-ACA 6-aminocaproic acid, in the time of anodized, can make aluminum ions in liberal supply,Thereby can obtain fine and close anodic alumina films, be under 10 μ m and above condition at thickness, even process without sealing of holeCan meet the requirement that the durable time of insulation is greater than 1000 hours.
Embodiment 1
The preparation method of the anode oxide film described in the present embodiment is as follows: first there is the steel of aluminium lamination to clean and scale removal to plating,Then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20g/L, 3g/L's6-ACA 6-aminocaproic acid, the hydrogen peroxide of 1.0g/L, the Triammonium citrate of 3g/L; Be that 10 DEG C, current density are 1A/dm in liquid temperature2, electricitySeparate and process 20min. The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 2
The preparation method of the anode oxide film described in the present embodiment is as follows: first there is the steel of aluminium lamination to clean and scale removal to plating,Then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 30g/L, 4g/L's6-ACA 6-aminocaproic acid, the hydrogen peroxide of 1.0g/L, the Triammonium citrate of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature2, electricitySeparate and process 20min. The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 3
The preparation method of the anode oxide film described in the present embodiment is as follows: first there is the steel of aluminium lamination to clean and scale removal to plating,Then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 35g/L, 5g/L's6-ACA 6-aminocaproic acid, the hydrogen peroxide of 1.0g/L, the Triammonium citrate of 5g/L; Be that 10 DEG C, current density are 1A/dm in liquid temperature2, electricitySeparate and process 30min. The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1500 hours.
Comparative example 1
First there is the steel of aluminium lamination to clean and scale removal to plating, then in oxalic acid solution, carry out anodized, described grassIn acid solution, contain the oxalic acid of 35g/L, the oxalic acid aluminium of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature2, electrolytic treatments 30Min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain boric acid and the 0.2mol/L of 0.5mol/LSodium tetraborate; Sealing of hole condition is 20 DEG C of liquid temperatures, current density 1A/dm2, 5 minutes electrolytic treatments time, it insulate the durable timeIt is 300～500 hours.
Comparative example 2
First there is the steel of aluminium lamination to clean and scale removal to plating, then in sulfuric acid solution, carry out anodized, described sulphurIn acid solution, contain the oxalic acid of 35g/L, the aluminum sulfate of 5g/L; Be that 20 DEG C, current density are 1A/dm in liquid temperature2, electrolytic treatments 30Min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain boric acid and the 0.2mol/L of 0.5mol/LSodium tetraborate; Sealing of hole condition is 20 DEG C of liquid temperatures, current density 1A/dm2, 5 minutes electrolytic treatments time, it insulate the durable timeIt is 250～400 hours.
High heat conductive insulating layer
In the present invention, the scope of the thermal conductivity factor of described high heat conductive insulating layer is 50～500W/mK. Described high heat conductive insulating layerThickness range is 20～500 μ m, for example, be 50 μ m. Described high heat conductive insulating layer can be by ceramic material or nonmetal monocrystal materialMake. Can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silica, nitrogen as ceramic materialSiClx, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride. Described ceramic material can lead in the present inventionCross and cut the ceramic wafer of firing and be welded on metal substrate of the present invention, described welding method can be for example solderingMethod, such as solder, solder brazing or active soldering etc., preferably use active soldering, and the composition of described active soldering for example canTo select the Si of Al, 3.00wt% and the Cu of surplus of Ti, 2.00wt% of 2.25wt%; For example can select 1.25wt% Ti,The Cu of 32.250wt% and the Ag of surplus; For example can select Ti, the 12.50wt% of 1.25wt% In, 27.25wt% Cu and more thanThe Ag of amount. In addition, described high heat conductive insulating layer can also adopt evaporation, sputter plating or reactive ion plating and chemical gaseous phase to sinkLong-pending method prepares, for example adopt application people be Suzhou Jing Pin Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017, publication number be CN103354221A,CN103353065A、CN103354219A、CN103354222A、CN103354698A、CN103354220A、CN103354269A、CN103354697A、CN103354699A、CN103354254A、CN103327736A、CN103327735A, CN103325921A, CN103338588A, or notification number be CN203340413U,CN203339213U、CN203339139U、CN203340409U、CN203340407U、CN203340408U、The preparation method who records in CN203339224U, CN203336288U, CN203339140U and CN203339145U, andAbove-mentioned document is documented in this, as a reference.
Resin insulating barrier
In the present invention, the thermal conductivity of described resin insulating barrier may be selected to be 0.5～30W/mK, and described resin insulating barrierThickness range is preferably 20～200 μ m.
Described resin insulating barrier is formed by the hardening resin composition that contains thermosetting resin, curing agent and inorganic filler, in addition,In the hardening resin composition that is used to form insulating barrier, can also can also use as required other component etc. Form barPart for example can solidify 30～180 seconds under the condition of 160～180 DEG C. As preferably, described hardening resin composition containsThe benzene alkene of the Bisphenol F diglycidyl ether of 55～60wt%, the VTES of 12.5～15.0wt%, 8.0～10.0wt%2 of the TSIM of acid-2-hydroxy methacrylate, 3.2～5.0wt%, the phthalic anhydride of 2.5～3.0wt%, 0.5～1.0wt%,6-BHT, and the average grain diameter of 3～8wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 3～8wt% areThe alumina particulate of 5.0 μ m.
Embodiment 4
The Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 55wt%, the vinyl of 15.0wt%Benzene olefin(e) acid-2-hydroxy methacrylate of triethoxysilane, 10.0wt%, the TSIM of 5.0wt%, the O-phthalic of 2.5wt%The BHT of acid anhydrides, 1.0wt%, and the average grain diameter of 5.5wt% is alumina particulate and the 6.0wt% of 2.0 μ mAverage grain diameter be the alumina particulate of 5.0 μ m. When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 20～25W/mK。
Embodiment 5
The Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 60wt%, the vinyl of 12.5wt%Benzene olefin(e) acid-2-hydroxy methacrylate of triethoxysilane, 8wt%, the TSIM of 3.2wt%, the phthalic acid of 3.0wt%The BHT of acid anhydride, 1.0wt%, and the average grain diameter of 6.3wt% is alumina particulate and the 6.0wt% of 2.0 μ mAverage grain diameter be the alumina particulate of 5.0 μ m. When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 22～26W/mK。
Embodiment 6
The Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 58wt%, the vinyl three of 15wt%The phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of Ethoxysilane, 10wt%, the TSIM of 5wt%, 3.0wt%,The BHT of 1.0wt%, and the average grain diameter of 4wt% is 2.0 alumina particulates of μ m and the average particle of 4wt%Footpath is the alumina particulate of 5.0 μ m. When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 18～22W/mK.Embodiment 7
The Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 78wt%, the 2-methyl miaow of 5wt%The phthalic anhydride of azoles, 3.0wt%, the BHT of 1.0wt%, and the average grain diameter of 6.5wt% is 2.0 μ mAlumina particulate and the average grain diameter of 6.5wt% be the alumina particulate of 5.0 μ m. The insulation resin layer thickness of preparation is 50 μ mTime, recording its thermal conductivity is 15～20W/mK.
Described resin insulating barrier, except meeting required thermal conductivity, also should have excellent heat-resisting variable color in the present inventionProperty. In order to detect the heat-resisting discoloration of above-mentioned hardening resin composition, by described hardening resin composition, 170 DEG C,8N/mm2And hardening time be under the condition of 120 seconds, be processed into diameter be 50mm × thickness be the disk of 3mm as sample,Then under the condition of 150 DEG C, place 24 hours, utilize and visually observe its heat-resisting discolouration, find the sample described in embodiment 4-6Do not find metachromatism, and the slightly variable color or variable color has occurred of sample described in embodiment 7.
Metal pattern circuit
According to actual needs, at described resin insulating barrier, or on described resin insulating barrier and described high heat conductive insulating layerAll be formed with metal pattern circuit. On described edge layer, can form conductive copper films by boning or pressing Copper Foil, or can lead toCross sputter, chemical plating (need to activate in advance) formation copper film. The thickness of described copper film is for example that 2～5 μ m are thick, then existsBe with on described copper film and coat photoresist, then on litho machine, utilize metal lithographic mask to carry out photoetching, then form metal through developingPattern circuit, or, adopt the method for serigraphy directly to form the figure of conductive metal layer; After baking-curing, then with wetMethod etch process carries out etching to described aluminium lamination, can obtain described metal pattern circuit after etching.
Industrial applicibility
High-power LED light source packaging body of the present invention, has improved heat dispersion and reliability, can at industrial circleBe widely used in street lighting, industrial and mineral and public place etc.
For the ordinary skill in the art, specific embodiment is just exemplarily described the present invention by reference to the accompanying drawings,Obviously specific implementation of the present invention is not subject to the restrictions described above, as long as adopted method design of the present invention and technical scheme to carry outThe improvement of various unsubstantialities, or without improving, design of the present invention and technical scheme are directly applied to other occasion, allWithin protection scope of the present invention.
Claims (9)
1. a high-power LED light source packaging body, comprises metal substrate, it is characterized in that: on described metal substrateBe formed with resin insulating barrier and high heat conductive insulating layer, and on described resin insulating barrier, be formed with metal pattern electricityRoad, described high heat conductive insulating layer is formed with metallic circuit and large-power LED light bead or chip, and described resin is exhaustedMetal pattern circuit on edge layer is connected by metal connector with the metallic circuit on described high heat conductive insulating layer;And described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper; Described height is ledThe thermal conductivity of thermal insulation layer is 50～500W/mK, and thickness is 20～200 μ m; The heat of described resin insulating barrierConductance is 0.5～30W/mK, and thickness is 20～200 μ m; Described resin insulating barrier is combined by curable resinThing forms; Bisphenol F diglycidyl ether, 12.5 that described hardening resin composition contains 55～60wt%～The VTES of 15.0wt%, the benzene Xi Suan of 8.0～10.0wt% ?2 ?hydroxy methacrylate, 3.2～The TSIM of 5.0wt%, the phthalic anhydride of 2.5～3.0wt%, 0.5～1.0wt% 2,6 ?twoButylated Hydroxytoluene, and the average grain diameter of 3～8wt% is the alumina particulate of 2.0 μ m and 3～8wt%Average grain diameter is the alumina particulate of 5.0 μ m.
2. packaging body according to claim 1, is characterized in that: the power of single LED lamp pearl or chipMore than 1W.
3. packaging body according to claim 1, is characterized in that: described metal substrate has aluminium lamination by platingSteel is made, and described steel is selected from the one in mild steel, heat-resisting steel or stainless steel.
4. packaging body according to claim 1, is characterized in that: described metallic matrix is through surface science and engineeringOrder, described surface treatment procedure comprises any one in roughening treatment, pickling or alkaline etching operation.
5. packaging body according to claim 3, is characterized in that: described metal base surface is through surfaceReason forms the anodic alumina films of electric insulation in its surface.
6. packaging body according to claim 5, is characterized in that: on described aluminium lamination, be formed with anodic oxidationAluminium film; The thickness of described aluminium lamination is 0.5～10mm, and the thickness of anodic alumina films is 10～20 μ m; InstituteThe durable time of insulation of stating anodic alumina films is greater than 1000 hours, and the durable time of described insulation refers toUnder 50 DEG C, the condition of 85%RH, on anodic alumina films, apply the DC voltage of 100V, and by under resistance valueBe down to 106Time below Ω.
7. packaging body according to claim 6, is characterized in that: described anodic alumina films passes through at lemonIn lemon aqueous acid, carry out anodized and obtain, described aqueous citric acid solution contains: the lemon of 20～35g/LLemon acid, 3～5g/L 6 ?amion acetic acid, the hydrogen peroxide of 0.5～1.0g/L, the Triammonium citrate of 3～5g/L;Be that 10～20 DEG C, current density are 0.5～1A/dm in liquid temperature2, electrolytic treatments 20～30min.
8. packaging body according to claim 1, is characterized in that: described LED lamp pearl or LED chip pass throughWave soldering, reflow soldering, eutectic welding or use electroconductive binder are connected with metallic circuit.
9. packaging body according to claim 1, is characterized in that: on described high heat conductive insulating layer, be formed with goldBelong to circuit and pad, described LED lamp pearl or LED chip are combined on pad, and described pad and described goldBelonging to circuit is electrically connected.
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| CN201410096052.3A CN103872217B (en) | 2014-03-14 | 2014-03-14 | High-power LED light source packaging body |
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| CN201410096052.3A Expired - Fee Related CN103872217B (en) | 2014-03-14 | 2014-03-14 | High-power LED light source packaging body |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100102344A1 (en) * | 2007-03-01 | 2010-04-29 | Yoshinori Ueji | Led device and illuminating apparatus |
| JP2011014890A (en) * | 2009-06-02 | 2011-01-20 | Mitsubishi Chemicals Corp | Metal substrate and light source device |
| KR20120068831A (en) * | 2009-07-17 | 2012-06-27 | 덴끼 가가꾸 고교 가부시키가이샤 | Led chip assembly, led package, and manufacturing method of led package |
| JP4700130B1 (en) * | 2010-02-01 | 2011-06-15 | 富士フイルム株式会社 | Insulating metal substrate and semiconductor device |
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