CN103869633B - Extreme Ultraviolet Lithography Source is collected and illuminator - Google Patents
Extreme Ultraviolet Lithography Source is collected and illuminator Download PDFInfo
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- CN103869633B CN103869633B CN201410145987.6A CN201410145987A CN103869633B CN 103869633 B CN103869633 B CN 103869633B CN 201410145987 A CN201410145987 A CN 201410145987A CN 103869633 B CN103869633 B CN 103869633B
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- mirror group
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- reflective mirror
- extreme ultraviolet
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Abstract
A kind of extreme Ultraviolet Lithography Source is collected and illuminator, comprises front end reflection mirror group and back end reflective mirror group two parts, is installed fixing between front end reflection mirror group and back end reflective mirror group by supporting construction.In front end reflection mirror group, every layer of reflecting surface to be rotated around optical axis by different parabolic segments and forms, and EUV light source is centrally located at parabolical focal plane and is on optical axis.The light that light source sends, after each parabolic reflective, penetrates with parallel light path; The parallel light path that front end reflection face is penetrated is divided into multiple thin narrow parallel light path by rear end anti-mirror group each ring-band shape circular conical surface, and all reflexes to final lighting point place.The present invention makes extreme ultra violet lithography source-collector system while carrying out ray-collecting, also the function of illuminator can be realized, complete shaping and the spectral filtering work of light beam, exposure for mask plate provides good lighting condition, collection system and illuminator are integrated together, overall work space can be reduced and make optical system structure compacter.
Description
Technical field
The invention belongs to extreme ultraviolet advanced photolithography techniques field, relate to a kind of extreme Ultraviolet Lithography Source and collect and illuminator, for the ray-collecting of plasma EUV light source and the shaping of focused light spot and spectral filtering, to realize the illuminating effect good to mask plate.
Background technology
Extreme ultraviolet/soft X-ray lithography is considered to one of photoetching technique most with prospects of future generation, and source-collector system and illuminator are the important component parts of extreme ultra violet lithography.
From purposes, collection system is not pure imaging system, its object is not plasma light source will be imaged onto intermediate focus place, but simply its extreme ultraviolet light sent is converged to intermediate focus place, and under the prerequisite meeting the requirement of image space aperture angle, make object space aperture angle effectively maximize as much as possible and then reach higher collection efficiency.By the impact of light source characteristic and mirror body deformability and mechanical support structure, the usual out-of-shape of speck formed at intermediate focus place, Luminance Distribution is uneven, except effective exposure wavelength (wavelength centered by 13.5nm, 2% wavestrip width) outward, spectral line outside other service bands is also introduced into, particularly system heat absorption heats up the infrared radiation that can not be ignored that brings, so this speck can not directly be used for throw light on mask plate, need to add an illuminator between, make light spot energy homogenising and spectrum purification, and then lighting condition needed for formation mask plate and exposure requirement.
No matter be transmission-type illuminator or reflective illuminator, usually a kind of typical A compound-eye-type structure can all be adopted, the compound eye Lighting Design thought of broad sense for: light beam actual light source sent is divided into numerous beamlets, because the cross section of these beamlets is narrower, so energy is close to being uniformly distributed, afterwards, these beamlets are under spatial order and symmetric effect, complementary intensity superposition is carried out in illumination place, homogeneity is further improved, by being plated in the filtration of the rete of specular surface, operation wavelength can efficiently be passed through, other spectral coverage wavelength obtains obvious filtering.
The generation of EUV light source is mainly adopted in two ways: laser plasma light source (LPP) and plasma discharging light source (DPP), the collection system that current and DPP light source is arranged in pairs or groups adopts Wolter-I type grazing incidence mirror, collect catoptron owing to being better than the normal incidence of arranging in pairs or groups with LPP at present in its structural behaviour and serviceable life, use so Wolter-I type collection system is also expected to carry out collocation with LPP light source.
But Wolter type collection system, due to its special version, causes the axial distance of itself and light source very near, this brings certain difficulty to the disappear design of assorted system of light source, further, the hyperbolic reflecting surface difficulty of processing of mirror body leading portion is large, and in manufacture with cost, this is the problem necessarily considered.The extreme ultraviolet compound eye type illuminator that initial stage proposes, due to the processing of its each small mirror unit and assembly difficulty large, do not obtain practicality accreditation widely.
Summary of the invention
For prior art produced problem, the present invention is under Wolter collects the design philosophy of catoptron and compound eye type illuminator, propose a kind of novel housing nested type system also simultaneously completing illumination optimization for extreme ultraviolet ray-collecting, this system can meet lithography requirements in design, and utilize existing process technology more easily to realize, and manufacturing cost can be reduced.
For achieving the above object, the present invention adopts following technical scheme:
A kind of extreme Ultraviolet Lithography Source is collected and illuminator, comprises front end reflection mirror group and back end reflective mirror group two parts, is installed fixing between front end reflection mirror group and back end reflective mirror group by star-like supporting construction, wherein:
That described front end reflection mirror group and back end reflective mirror group all comprise equal number, carry out installing arrangement from internal layer to skin with nested form shell reflective mirror, wherein there is relation one to one to the shell reflective mirror of the corresponding number of plies of back end reflective mirror group in certain layer of shell reflective mirror of front end reflection mirror group in light path, and be engaged togather by supporting construction;
The reflecting surface of every layer of shell reflective mirror in described front end reflection mirror group is all that certain para-curve rotates around optical axis and forms, light source is positioned at parabolical focal plane and is on optical axis, every layer of para-curve has 6 °-8 ° ray-collecting angles, and minimum collection angle is 20 °, and maximum collection angle is 60 °.After each parabolic reflective of the light that EUV light source sends premenstrual terminal reflector group, with parallel light path injection, and from outermost layer para-curve to innermost layer para-curve, the slope of the parallel rays emitted by them is descending to be reduced successively;
Every layer of shell reflective mirror in described back end reflective mirror group is ring-band shape circular conical surface, the coaxial setting of each ring-band shape circular conical surface, wherein each ring-band shape circular conical surface is the continuous line segment of multistage along shaft section, each circular conical surface bus slope changes successively, form many ribs multistage conical surface, thus front end reflection face is divided into multiple thin narrow parallel light path along the directional light that shaft section penetrates, last each shell reflective mirror reflexes to final lighting point place the thin narrow parallel light path projected on it, because the slope of each shell reflective mirror changes successively, ensure that multiple thin narrow parallel light path is superimposed at lighting point place.
In the present invention, the front end reflection mirror group of whole system and back end reflective mirror group are made up of 5-6 layer shell reflective mirror, object space aperture angle is 60 °, image space aperture angle is determined according to lighting demand (being generally 10 °-15 °), system axial length 400m, radical length 700mm, electric light source and lighting point distance is between 1000-1500mm, and light source and system front end catoptron group distance are 150mm.
In the present invention, following principle is adopted for method for designing: one, adopt the method for ecto-entad design, that is: outermost structural parameters are first determined, determine the structural parameters of internal layer more successively, each layer para-curve will accurately be connected at the collection angle of object space, and the light path of every layer of shell reflective mirror to periphery each layer shell reflective mirror can not produce and block.Its two, adopt previously again after method for designing, that is: after having designed the para-curve of front end reflection mirror group every layer, thereupon according to its structure, determine back end reflective mirror group many ribs multistage circular cone reflecting surface thereafter.
In the present invention, described extreme Ultraviolet Lithography Source is collected and illuminator system is meeting under each shell reflective mirror marginal ray is connected rational condition, and general structure design has very high-freedom degree, each shell reflective mirror can carry out design and optimization separately.Each para-curve has four design freedoms, be respectively: light source is adjustable relative to the position of focus on para-curve focal plane, before light source distance, the axial distance of group catoptron is adjustable, the maximum collection angle of system to light source is adjustable, and the collection angle scope of each layer shell reflective mirror is adjustable.Many ribs multistage circular conical surface also has four design freedoms, is respectively: the position of first mirror unit is adjustable, and the size of each mirror unit is adjustable, and the slope of each mirror unit is adjustable (having two degree of freedom).
In the present invention, described para-curve can change the slope size from the parallel rays emitted by it along optical axis by modyfied equation parameter, light slope size determines its incident angle on front group of catoptron, and the size of incident angle decides the reflectivity of reflecting surface, therefore adjusting the parallel rays slope that each para-curve gets is necessary to optimization mass reflex rate.
In the present invention, described many ribs multistage circular conical surface is by changing size and the bus slope of each mirror unit, size and the numerical aperture angle of illumination spot can be controlled, overall light harvesting degree is met the demands, wherein the size of mirror unit determines the size of illumination spot, the two is geometrically becoming certain proportionate relationship, and the slope of mirror unit determines that illumination spot is in the position of optical axis, namely determines image space aperture angle.During design, with intermediate mirror unit for benchmark, the parallel light path making it reflect just in time overlaps with required illumination spot in the cross section at optical axis place, afterwards, adjusts size and the slope of other mirror units, and the parallel light path making them reflect is also overlapping at required illumination spot place.
In the present invention, the ray-collecting angle of the internal layer shell catoptron of described extreme Ultraviolet Lithography Source collection and illuminator is less than the ray-collecting angle of outer casing catoptron, thus make internal layer mirror axis to contraction in length and be consistent with skin, ensure that each housing installs the requirement of fixing aspect.
The present invention has following beneficial effect:
1, the present invention makes extreme ultra violet lithography source-collector system while carrying out ray-collecting, also the function of illuminator can be realized, complete shaping and the spectral filtering work of light beam, exposure for mask plate provides good lighting condition, collection system and illuminator are integrated together, overall work space can be reduced and make optical system structure compacter.
2, compared to hyperbolic mirror and the ellipsoidal mirror of Wolter type collection system, and the reflection type compound eye illuminator of existing complexity, the present invention adopts the para-curve surfaces of revolution and Axicon mirror unit, more easily processes and assembles, the manufacturing cost reduced.
Accompanying drawing explanation
Fig. 1 is the two-dimentional light channel structure sketch of extreme Ultraviolet Lithography Source provided by the present invention collection and illuminator;
The many rib multistage circular conical surface catoptron of Fig. 2 designed by the present invention and the illumination principle of optimality thereof;
The five layer para-curve surfaces of revolution being positioned at system front end of Fig. 3 designed by the present invention;
More than the five layer rib multistage circular conical surface catoptron that be positioned at System Back-end of Fig. 4 designed by the present invention;
In figure, 1-light source, 2-front end reflection mirror group, 3-back end reflective mirror group, 4-illumination spot place, 5-circular conical surface catoptron unit, the parallel beam that 6-goes out through parabolic reflective, the thin narrow parallel beam of 7-.
Embodiment
Composition graphs 1 and Fig. 2, provide one embodiment of the present of invention, mainly as further description of the present invention, but not is used for limiting scope of the present invention.
As shown in Figure 1, the extreme Ultraviolet Lithography Source that present embodiment provides is collected and illuminator comprises light source 1, front end reflection mirror group 2, back end reflective mirror group 3 and illumination spot place 4.The illuminating aperture angle of mask plate will mate with the object space aperture angle of optical projection system, according to this condition, can tentatively determine that the image-side numerical aperture of source-collector and illuminator in present embodiment is 0.3 (being approximately the half angle radian value of System Back-end in the face of illumination spot 4).If light source adopts laser plasma light source (LPP), due to its isoionic small-sized (500um), can be similar to and regard pointolite as, object space aperture angle then in present embodiment should be the bigger the better, but, be subject to the restriction of overall dimensions, axial distance between electric light source and lighting point should have individual upper limit maximal value, once maximal value is determined, then along with the increase of object space aperture angle, collection in present embodiment and illuminator will the closer to light sources, this can bring difficulty to the design of the assorted system (DMT) that disappears in extreme ultra violet lithography between light source and collection system and installation, namely in present embodiment, the object space aperture angle of system will have a higher limit, according to design experiences, tentatively be decided to be 60 ° (being approximately the half angle radian value of system front end in the face of light source 1).For avoiding producing larger deformation induced by gravity, the axial length of whole system and diameter of section suggestion are no more than 0.5m.
According to the design philosophy of extreme ultraviolet photolithographic Woter type collection system nested type catoptron, we still adopt multi-layer nested shell reflective mirror to be optimized distribution to the object space aperture angle of 60 °, each shell reflective mirror carries out independent light reflection and convergence to a part of incident angle, with Wolter type collection system unlike, the reflecting surface of each front end reflection mirror group 2 is not hyperboloid, but the reflecting surface that para-curve rotates along optical axis, light source 1 is positioned at a certain position, para-curve focal plane, then light is after each parabolic reflective, become a branch of bundle parallel light path.
The angle (light slope) of each directional light and optical axis reduces from outermost layer para-curve successively to innermost layer para-curve, and the slope of each parallel beam is chosen and wanted suitably.This is because: light is from light source 1, lighting point is arrived after para-curve surfaces of revolution catoptron and circular conical surface catoptron two secondary reflection, for every one deck catoptron, image space and object space aperture angle are fixing, then the overall angle of two secondary reflection deflections is also certain, so two reflection deflection angles need reasonably to distribute, to make mass reflex rate maximum.
Because every layer of catoptron housing is about optical axis Rotational Symmetry, then paraboloid of revolution equation can be reduced to the two-dimensional square formula of system longitudinal cross-section.
With the paraboloid of revolution bus equation that light source 1 position is initial point be:
(y+h)∧2＝2p*(x+p/2) (1)；
P, h are respectively transversal displacement and the vertical misalignment amount on light source 1 pair of para-curve summit.
On bus, the slope of every bit is:
y′＝p/(y+h) (2)。
Parabolic equation can be completed by follow procedure instruction:
K=20; The parallel beam of % outermost layer outgoing and optical axis included angle
1=150; % light source and outermost layer housing front end face axial distance
U=60; % outermost layer catoptron collection angle maximal value
v＝(u+k)/2；
p＝2*1/((1/tan(v/180*pi))∧2-1)；
h＝p/tan(v/180*pi)-1*tan(u/180*pi)；
X=150:300; % para-curve axial length
Y=sqrt (2*p* (x+p/2))-h; % outermost layer housing parabolic equation
As shown in back end reflective mirror group 3 in Fig. 1, all get to many ribs multistage circular conical surface of this layer of rear end from the parallel beam of every one deck para-curve injection.Many ribs multistage circular conical surface is made up of the circular conical surface catoptron unit 5 of multiple ring-band shape, these mirror units are divided into again many thin narrow parallel beams 7 each parallel beam 6 gone out through parabolic reflective, each mirror unit carries out primary event separately to each thin arrow beam of light, the parallel thin arrow beam of light that cross section is identical is still after reflection, by changing the inclination slope of each mirror unit, the thin arrow beam of light that these can be made many converges in identical required illumination spot 4, because the bus slope (about optical axis) of each mirror unit is different, should using the mirror of centre unit as design reference standard, and the size of intermediate mirror unit and slope size determined by the spatial relation of the spot size thrown light on and hot spot and this mirror unit, this reference mirror unit is once determine, size and the slope of other mirror unit also just determine.
Claims (8)
1. extreme Ultraviolet Lithography Source is collected and illuminator, it is characterized in that described system comprises front end reflection mirror group and back end reflective mirror group two parts, is installed fixing between front end reflection mirror group and back end reflective mirror group by supporting construction, wherein:
That described front end reflection mirror group and back end reflective mirror group all comprise equal number, carry out installing arrangement from internal layer to skin with nested form shell reflective mirror, wherein there is relation one to one to the shell reflective mirror of the corresponding number of plies of back end reflective mirror group in certain layer of shell reflective mirror of front end reflection mirror group in light path, and be engaged togather by supporting construction;
The reflecting surface of every layer of shell reflective mirror in described front end reflection mirror group all to be rotated around optical axis by para-curve and forms, and light source is positioned at parabolical focal plane and is on optical axis;
Every layer of shell reflective mirror in described back end reflective mirror group is ring-band shape circular conical surface, the coaxial setting of each ring-band shape circular conical surface, and wherein each ring-band shape circular conical surface is the continuous line segment of multistage along shaft section;
After each parabolic reflective of the light that EUV light source sends premenstrual terminal reflector group, penetrate with parallel light path, back end reflective mirror group each ring-band shape circular conical surface is divided into multiple thin narrow parallel light path front end reflection face along the directional light that shaft section penetrates, and all reflexes to final lighting point place.
2. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described para-curve has the ray-collecting angle of 6 °-8 °.
3. extreme Ultraviolet Lithography Source according to claim 2 is collected and illuminator, and it is characterized in that described parabolical minimum collection angle is 20 °, maximum collection angle is 60 °.
4. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that the slope of the parallel rays of described para-curve emitted by from outermost layer to innermost layer is descending and reduces successively.
5. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described front end reflection mirror group and back end reflective mirror group are made up of 5-6 layer shell reflective mirror.
6. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, and it is characterized in that the object space aperture angle of described system is 60 °, image space aperture angle is 10 °-15 °.
7. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described system axial length 400m, radical length 700mm.
8. extreme Ultraviolet Lithography Source according to claim 1 is collected and illuminator, it is characterized in that described system source and lighting point distance are between 1000-1500mm, and light source and front end reflection mirror group distance are 150mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104597725A (en) * | 2015-02-16 | 2015-05-06 | 哈尔滨工业大学 | Vacuum chamber of capillary discharge EUV light source |
| CN104866680B (en) * | 2015-06-01 | 2018-05-08 | 哈尔滨工业大学 | The optimal spacing acquiring method of mirror body dorsal part cooling pipe in a kind of extreme ultraviolet collection system |
| CN114217509B (en) * | 2021-12-16 | 2022-10-04 | 哈尔滨工业大学 | Mechanical compound eye rotation driving device based on stay-supported mechanism |
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