CN103866278B - Method for increasing Atomic layer deposition precursor quantity - Google Patents
Method for increasing Atomic layer deposition precursor quantity Download PDFInfo
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- CN103866278B CN103866278B CN201210532057.7A CN201210532057A CN103866278B CN 103866278 B CN103866278 B CN 103866278B CN 201210532057 A CN201210532057 A CN 201210532057A CN 103866278 B CN103866278 B CN 103866278B
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- reactant
- carrier gas
- presoma
- atomic layer
- layer deposition
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Abstract
The present invention discloses a kind of method for increasing Atomic layer deposition precursor quantity, and it includes being surface-treated substrate base；In placing the substrate into the reaction chamber of atomic layer deposition apparatus；Carrier gas is passed through in differential responses thing bottle, the reactant taken out of by carrier gas is reacted in solvent bottle, and generates presoma；Presoma is transported in ald reaction chamber carries out the deposition of film.Method provided by the present invention for increasing Atomic layer deposition precursor quantity is transported in solvent bottle the method that chemical reaction occurs to generate presoma using differential responses thing by carrier gas, the presoma scope of ALD deposition technology while ALD deposition condition is met, can be increased.
Description
Technical field
The present invention relates to the technical field of film preparation of ald, and in particular to one kind is for increasing ald
The method of presoma quantity.
Background technology
The characteristics of ald (ALD) technology is due to its unique monoatomic layer low temperature layer by layer deposition so that preparation
Film has compactness, conformality and the thickness of height in the exact controllability of atomic scale.In ALD deposition technology, presoma
Type and quantity to deposition gained film structure, composition and performance serve it is conclusive.The presoma commonly used in ALD is past
Toward being volatile and decompose the source of the gas that reacts, and the source of the gas that could be decomposed in high temperature for some needs is such as：Methane, dioxy
Changing carbon etc. cannot then use, and the use for some inflammable and explosive dangerous goods in addition can also receive limitation.
Therefore, in order that ALD technique plays its growth characteristics, it is necessary to do some to existing equipment and improve to greatest extent
Expand the presoma type and quantity of the technology, be that the development of thin film technique lays the foundation.
The content of the invention
The technical problems to be solved by the invention are to provide one kind and presoma can be prepared in situ using the method so that one
A little inflammable and explosive hazardous compounds can be used as the presoma of ALD, increased the presoma value volume and range of product of ald
The method for increasing Atomic layer deposition precursor quantity.
In order to solve the above technical problems, the invention provides a kind of side for increasing Atomic layer deposition precursor quantity
Method, including：
Substrate base is surface-treated；
In placing the substrate into the reaction chamber of atomic layer deposition apparatus；
Carrier gas is passed through in differential responses thing bottle, the reactant taken out of by carrier gas is reacted in solvent bottle, and is given birth to
Into presoma；
Presoma is transported in ald reaction chamber carries out the deposition of film.
Method provided by the present invention for increasing Atomic layer deposition precursor quantity passes through carrier gas using differential responses thing
Generation chemical reaction can increase come the method for generating presoma while ALD deposition condition is met in being transported to solvent bottle
The presoma scope of ALD deposition technology.
Brief description of the drawings
Fig. 1 is the flow chart for locally producing ALD presomas of use provided in an embodiment of the present invention.
Specific embodiment
The present invention provides a kind of method for increasing Atomic layer deposition precursor, including：
Substrate base is surface-treated；
In placing the substrate into the reaction chamber of ald (ALD) equipment；
Carrier gas is passed through in differential responses thing bottle, the reactant taken out of by carrier gas is reacted in solvent bottle, and is given birth to
Into presoma；
Presoma is transported and/or the mode of carrier gas purge is transported the heavy of film is carried out in ald reaction chamber
Product.
Wherein, carrier gas is to be contacted with two kinds or two or more reactants parallel, is transported in appropriate solvent, molten
Reactant chemically reacts in agent, generates presoma.The presoma of generation is transported to reaction chamber by carrier gas；Conventional is easy
Volatilization and the presoma for decomposing pass through carrier gas purge to reaction chamber, carry out deposition successively.Carrier gas can select nitrogen, argon gas or
Helium.The flow of carrier gas is 1sccm-250sccm so that reactant can sufficiently be well mixed.The pipe that air inlet method is used
The temperature of wall is less than 1 DEG C -90 DEG C of ald reaction chamber temperature.
Embodiment 1：
As shown in figure 1, the present embodiment provides a kind of method for increasing Atomic layer deposition precursor, can be by carrier gas
Mode make mounted in reactant bottle 1 in N-methyl-N-nitro-p-toluenesulfonamide (p-CH3-C6H4-SO2N(NO)CH3) and
Reacted in methyl alcohol in mounted in reactant bottle 3 mounted in potassium hydroxide (KOH) in reactant bottle 2, then in substrate surface shape
Into methyl structural.
Comprise the following steps that：
Substrate silicon carbide silicon or tungsten carbide are cleaned using hydrogen treat 20 minutes or titer, its surface is formed C-
H keys.
A N-methyl-N-nitro-p-toluenesulfonamide solution of loading 10mL-250mL in two reactant bottles, separately
One loading potassium hydroxide solution, 10-100mL methyl alcohol is loaded in reactant bottle 3, and now tube wall temperature is preferably 1-40 °C.
Carrier gas flux is 1sccm-250sccm, into N-methyl-N-nitro-p-toluenesulfonamide solution, with transporter
Be carried out for N-methyl-N-nitro-p-toluenesulfonamide by formula；Carrier gas simultaneously and the potassium hydroxide alkali soluble of Purge methods transport
Liquid mixes, and enters into methanol solvate, reacts, and reaction equation is：
Diazomethane itself is decomposed, forming material carbene (:CH2), reaction equation is：
Catabolite carbene (:CH2) and substrate occur intercalation reaction, expression formula：
Methyl structural may finally be deposited in substrate surface.
The present invention provides a kind of improved method to existing atomic layer deposition apparatus, and it can meet ALD deposition side
On the premise of formula, increase the quantity being adapted to the precursor of ALD equipment deposition film.
It should be noted last that, above specific embodiment is merely illustrative of the technical solution of the present invention and unrestricted,
Although being described in detail to the present invention with reference to example, it will be understood by those within the art that, can be to the present invention
Technical scheme modify or equivalent, without deviating from the spirit and scope of technical solution of the present invention, it all should cover
In the middle of scope of the presently claimed invention.
Claims (5)
1. the method for being used to increase Atomic layer deposition precursor quantity, it is characterised in that including：
Substrate base is surface-treated；
In placing the substrate into the reaction chamber of atomic layer deposition apparatus；
Carrier gas is passed through in differential responses thing bottle, the reactant taken out of by carrier gas is reacted in solvent bottle, and before generating
Drive body；
Presoma is transported the deposition for being transported in ald reaction chamber with the mode of carrier gas purge and carrying out film；The load
Gas is nitrogen N2, helium He or argon Ar；The source that the carrier gas is used for transporting presoma is the source of the carrier gas purge all the way
It is multichannel；The carrier gas is parallel, while contacted with each reactant；The carrier gas flux is 1sccm -250sccm.
2. the method for increasing Atomic layer deposition precursor quantity according to claim 1, it is characterised in that described anti-
It is two or more to answer thing bottle.
3. the method for increasing Atomic layer deposition precursor quantity according to claim 2, it is characterised in that described anti-
Answering thing bottle includes the first reactant bottle equipped with the first reactant, the second reactant bottle equipped with the second reactant and equipped with solvent
The 3rd reactant bottle；First reactant, second reactant react in the solvent, for generating presoma
Material.
4. the method for increasing Atomic layer deposition precursor quantity according to claim 1, it is characterised in that the load
Reaction chamber temperature of the tube wall temperature less than ald when gas takes reactant out of and transports difficult volatilization presoma, it is described
Tube wall temperature when carrier gas is taken reactant out of and transports difficult volatilization presoma is 1 DEG C -90 DEG C.
5. the method for increasing Atomic layer deposition precursor quantity according to claim 1, it is characterised in that before described
It is two kinds or two or more to drive body, is Fieldable chemical reaction generation, or presoma that is volatile and decomposing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210532057.7A CN103866278B (en) | 2012-12-11 | 2012-12-11 | Method for increasing Atomic layer deposition precursor quantity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210532057.7A CN103866278B (en) | 2012-12-11 | 2012-12-11 | Method for increasing Atomic layer deposition precursor quantity |
Publications (2)
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| CN103866278A CN103866278A (en) | 2014-06-18 |
| CN103866278B true CN103866278B (en) | 2017-06-20 |
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| CN201210532057.7A Active CN103866278B (en) | 2012-12-11 | 2012-12-11 | Method for increasing Atomic layer deposition precursor quantity |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI117978B (en) * | 2000-04-14 | 2007-05-15 | Asm Int | Method and apparatus for constructing a thin film on a substrate |
| US7438949B2 (en) * | 2005-01-27 | 2008-10-21 | Applied Materials, Inc. | Ruthenium containing layer deposition method |
| DE102008017077B4 (en) * | 2008-04-01 | 2011-08-11 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 | Process for the preparation of an n-semiconducting indium sulfide thin film |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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