CN103866278A - Method for increasing number of atomic layer deposition precursors - Google Patents
Method for increasing number of atomic layer deposition precursors Download PDFInfo
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- CN103866278A CN103866278A CN201210532057.7A CN201210532057A CN103866278A CN 103866278 A CN103866278 A CN 103866278A CN 201210532057 A CN201210532057 A CN 201210532057A CN 103866278 A CN103866278 A CN 103866278A
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- presoma
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- carrier gas
- ald
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Abstract
The invention discloses a method for increasing the number of atomic layer deposition precursors. The method comprises the steps: carrying out surface treatment of a substrate base sheet; placing the substrate in a reaction chamber of an atomic layer deposition device; introducing carrier gas into different reactant bottles, and carrying out a reaction of reactants brought out by the carrier gas in a solvent bottle, to generate the precursors; and transporting the precursors to the atomic layer deposition reaction chamber, and carrying out thin film deposition. The method for increasing the number of the atomic layer deposition precursors is the method comprising that different reactants are transported into the solvent bottle by the carrier gas and are subjected to the chemical reaction to generate the precursors, can meet the ALD deposition conditions, and at the same time, increases the precursor scope of the ALD deposition technology.
Description
Technical field
The present invention relates to the film preparing technology field of ald, be specifically related to a kind of method for increasing ald presoma quantity.
Background technology
Ald (ALD) technology, due to its unique monoatomic layer low temperature layer by layer deposition, makes the film of preparation have compactness, conformality and the thickness of height at the exact controllability of atomic scale.In ALD deposition technique, the kind of presoma and quantity play conclusive effect to structure, composition and the performance of deposition gained film.In ALD, conventional presoma is volatile and decompose the source of the gas reacting often, the source of the gas that need to could decompose at high temperature for some as: methane, carbonic acid gas etc. cannot use, and also can receive restriction in addition for the use of some inflammable and explosive hazardous product.
Therefore,, in order to make ALD technology bring into play to greatest extent its growth characteristics, need to do some and improve to expand to existing installation presoma kind and the quantity of this technology, for the development of thin film technique lays the foundation.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of the method that uses can in situ preparation presoma, make some inflammable and explosive hazardous compounds can be used as the presoma of ALD, increased the method for increasing ald presoma quantity of the presoma value volume and range of product of ald.
For solving the problems of the technologies described above, the invention provides a kind of method for increasing ald presoma quantity, comprising:
Substrate base is carried out to surface treatment;
Substrate is put into the reaction chamber of atomic layer deposition apparatus;
Carrier gas is passed in differential responses thing bottle, and the reactant of taking out of by carrier gas reacts in solvent bottle, and generates presoma;
Presoma is transported to the deposition of carrying out film in ald reaction chamber.
Method for increasing ald presoma quantity provided by the invention adopts differential responses thing to be transported to the method that in solvent bottle, chemical reaction occurs and generate presoma by carrier gas, can, in meeting ALD mode of deposition, increase the presoma scope of ALD deposition technique.
Accompanying drawing explanation
The scene of the employing that Fig. 1 provides for the embodiment of the present invention generates the schema of ALD presoma.
Embodiment
The invention provides a kind of method for increasing ald presoma, comprising:
Substrate base is carried out to surface treatment;
Substrate is put into the reaction chamber of ald (ALD) equipment;
Carrier gas is passed in differential responses thing bottle, and the reactant of taking out of by carrier gas reacts in solvent bottle, and generates presoma;
Presoma is transported and/or carrier gas purge mode be transported to the deposition of carrying out film in ald reaction chamber.
Wherein, carrier gas is to walk abreast to contact with two kinds or two or more reactant, is transported in appropriate solvent, and reactant generation chemical reaction in solvent, generates presoma.The presoma generating is transported to reaction chamber by carrier gas; Conventional presoma volatile and that decompose is purged to reaction chamber by carrier gas, carries out deposition successively.Carrier gas can be selected nitrogen, argon gas or helium.The flow of carrier gas is 1sccm-250sccm, and reactant can be mixed fully.The temperature of the tube wall that air inlet method uses is lower than 1 ℃-90 ℃ of ald reaction chamber temperature.
Embodiment 1:
As shown in Figure 1, the present embodiment provides a kind of method for increasing ald presoma, can make to be contained in the N-methyl-N-nitro-p-toluenesulfonamide (p-CH in reactant bottle 1 by the mode of carrier gas
3-C
6h
4-SO
2n (NO) CH
3) and be contained in potassium hydroxide in reactant bottle 2 (KOH) and in methyl alcohol, react being contained in reactant bottle 3, then form methyl structural at substrate surface.
Concrete steps are as follows:
Adopt hydrogen treat 20 minutes or reference liquid to clean in substrate silicon carbide or wolfram varbide, make its surface form c h bond.
In two reactant bottles, one packs the N-methyl-N-nitro-p-toluenesulfonamide solution of 10mL-250mL into, and another packs potassium hydroxide solution into, packs 10-100mL methyl alcohol in reactant bottle 3 into, and now pipe surface temperature is preferably 1-40 ° of C.
Carrier gas flux is 1sccm-250sccm, enters N-methyl-N-nitro-p-toluenesulfonamide solution, with mode of transport, N-methyl-N-nitro-p-toluenesulfonamide is carried out; The potassium hydroxide alkaline solution of carrier gas simultaneously and Purge methods transportation mixes, and enters into methanol solvate, reacts, and reaction formula is:
Diazomethane self decomposes, formation material carbene (: CH2), reaction formula is:
Degradation production carbene (: CH2) and substrate generation insertion reaction, expression formula:
The present invention provides one to improve one's methods to existing atomic layer deposition apparatus, and it can meet under the prerequisite of ALD depositional mode, increases the quantity being applicable to the precursor of ALD equipment deposit film.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to example, those of ordinary skill in the art is to be understood that, can modify or be equal to replacement technical scheme of the present invention, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of claim scope of the present invention.
Claims (9)
1. for increasing the method for ald presoma quantity, it is characterized in that, comprising:
Substrate base is carried out to surface treatment;
Substrate is put into the reaction chamber of atomic layer deposition apparatus;
Carrier gas is passed in differential responses thing bottle, and the reactant of taking out of by carrier gas reacts in solvent bottle, and generates presoma;
Presoma is transported to the deposition of carrying out film in ald reaction chamber.
2. the method for increasing ald presoma quantity according to claim 1, is characterized in that, described carrier gas is nitrogen N
2, helium He or argon Ar.
3. the method for increasing ald presoma quantity according to claim 1, is characterized in that, described carrier gas is used for transporting Yuan Wei mono-tunnel of presoma, and the source that described carrier gas purges is multichannel.
4. the method for increasing ald presoma quantity according to claim 1, is characterized in that, described carrier gas is parallel, contacts with each reactant simultaneously.
5. the method for increasing ald presoma quantity according to claim 1, is characterized in that, described reactant bottle is two or more.
6. the method for increasing ald presoma quantity according to claim 5, it is characterized in that, described reactant bottle comprise be equipped with the first reactant the first reactant bottle, the second reactant bottle of the second reactant is housed and the 3rd reactant bottle of solvent is housed; Described the first reactant, described the second reactant react in described solvent, for generating the material of presoma.
7. the method for increasing ald presoma quantity according to claim 1, is characterized in that, described carrier gas flux is 1sccm – 250sccm.
8. the method for increasing ald presoma quantity according to claim 1, it is characterized in that, pipe surface temperature when described carrier gas is taken reactant out of and transported difficult volatilization presoma is lower than the reaction chamber temperature of ald, and pipe surface temperature when described carrier gas is taken reactant out of and transported difficult volatilization presoma is 90 ° of C of 1 ° of C –.
9. the method for increasing ald presoma quantity according to claim 1, is characterized in that, described presoma is two kinds or two or more, is that on-the-spot chemical reaction generates, or presoma volatile and that decompose.
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| CN201210532057.7A CN103866278B (en) | 2012-12-11 | 2012-12-11 | Method for increasing Atomic layer deposition precursor quantity |
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|---|---|---|---|
| CN201210532057.7A CN103866278B (en) | 2012-12-11 | 2012-12-11 | Method for increasing Atomic layer deposition precursor quantity |
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| CN103866278A true CN103866278A (en) | 2014-06-18 |
| CN103866278B CN103866278B (en) | 2017-06-20 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW496907B (en) * | 2000-04-14 | 2002-08-01 | Asm Microchemistry Oy | Method and apparatus of growing a thin film onto a substrate |
| US20060165892A1 (en) * | 2005-01-27 | 2006-07-27 | Applied Materials, Inc. | Ruthenium containing layer deposition method |
| US20110081734A1 (en) * | 2008-04-01 | 2011-04-07 | Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh | Method and arrangement for producing an n-semiconductive indium sulfide thin layer |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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2012
- 2012-12-11 CN CN201210532057.7A patent/CN103866278B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW496907B (en) * | 2000-04-14 | 2002-08-01 | Asm Microchemistry Oy | Method and apparatus of growing a thin film onto a substrate |
| US20060165892A1 (en) * | 2005-01-27 | 2006-07-27 | Applied Materials, Inc. | Ruthenium containing layer deposition method |
| US20110081734A1 (en) * | 2008-04-01 | 2011-04-07 | Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh | Method and arrangement for producing an n-semiconductive indium sulfide thin layer |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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