CN103828077B - 发光元件安装用基板及发光装置 - Google Patents

发光元件安装用基板及发光装置 Download PDF

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CN103828077B
CN103828077B CN201280046457.5A CN201280046457A CN103828077B CN 103828077 B CN103828077 B CN 103828077B CN 201280046457 A CN201280046457 A CN 201280046457A CN 103828077 B CN103828077 B CN 103828077B
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light
emitting device
mounting substrate
device mounting
aluminium oxide
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CN103828077A (zh
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户田甫
中须贺实
中元彻郎
三垣俊二
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Kyocera Corp
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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Abstract

本发明提供一种体积固有电阻率低、静电破坏的可能性小的发光元件安装用基板以及在该发光元件安装用基板上安装发光元件而成的发光装置。发光元件安装用基板以构成的所有成分为100质量％时，含有氧化铝占80质量％以上的氧化铝烧结体，由于氧化铝的结晶粒子中O和Al的原子数之比O/Al低于1.5，因此可以形成体积固有电阻率低，静电破坏的可能性小的发光元件安装用基板。

Description

发光元件安装用基板及发光装置
技术领域
本发明涉及发光元件安装用基板以及在该发光元件安装用基板安装发光元件而成的发光装置。
背景技术
近年来，作为高辉度且低耗电量的发光元件，LED(发光二极管)受到关注。而且，从作为一般照明到作为电光显示板的光源、手机和电脑等的背光灯而渐渐被广泛利用。
而且，该发光元件被安装于由形成于基板的金属形成的导体上，作为基板，使用的是体积固有电阻率高且机械特性优良的陶瓷，考虑到可以较廉价地制造这点，多使用氧化铝烧结体。作为这样的氧化铝烧结体，例如专利文献1提供了含有氧化铝和玻璃质成分的高反射白色陶瓷。
现有技术文献
专利文献
专利文献1：日本特开2007-284333号公报
发明内容
发明要解决的问题
但是，专利文献1这样的含有氧化铝烧结体的基板由于表面上形成有导体，因此要求体积固有电阻率要高。但体积固有电阻率过高时，在导体的形成、搬运等过程中，由于与设备等的接触或摩擦，基板容易带静电。而且，在基板带静电的状态下安装发光元件时，由于所带的静电的放出，发光元件有发生静电破坏的可能性。
本发明为解决上述课题而提出，目的在于提供体积固有电阻率低，静电破坏的可能性小的发光元件安装用基板以及在该发光元件安装用基板上安装发光元件而成的发光装置。
本发明的发光元件安装用基板的特征在于，其含有以构成的所有成分为100质量％时氧化铝占80质量％以上的氧化铝质烧结体，氧化铝的结晶粒子中的O和Al的原子数之比O/Al低于1.5。
另外，本发明的发光装置的特征在于，在上述构成的发光元件安装用基板载置有发光元件。
根据本发明的发光元件安装用基板，由于氧化铝的结晶粒子中的O和Al的原子数之比O/Al低于1.5，因此可以降低体积固有抵抗率，在导体的形成、搬运等过程中，可以减少由于与设备等的接触或摩擦而带静电的可能性。
另外，根据本发明的发光装置，由于是在体积固有电阻率低、静电破坏的可能性小的发光元件安装用基板上安装发光元件而成的，因此可以作为可靠性高的发光装置。
附图说明
图1为表示本实施方式的发光元件安装用基板的导体的形成例的部分剖视图。
图2为表示本实施方式的发光元件安装用基板的漫反射光的散射状态的示意图。
图3为表示在本实施方式的发光元件安装用基板安装发光元件而成的发光装置的结构之一例的剖视图。
具体实施方式
以下利用附图说明本实施方式的发光元件安装用基板以及在该发光元件安装用基板载置了发光元件的发光装置。图1为表示本实施方式的发光元件安装用基板中导体的形成例的部分剖视图。
图1所示的发光元件安装用基板1(以下也称基板1)示意了在基板1的一侧表面1a形成有电极3a、3b，在形成了电极3a、3b的部分形成有电极焊垫3c、3d的例子，含有半导体的发光元件(未图示)载置于电极焊垫3c或电极焊垫3d上。另外，图1还示意了在贯通孔内、另一个表面1b也形成有电极3a、3b的例子。
而且，本实施方式的发光元件安装用基板1的特征在于，以构成的成分为100质量％时，含有氧化铝占80质量％以上的氧化铝烧结体，该氧化铝的结晶粒子中的O和Al的原子数之比O/Al低于1.5。予以说明，以下叙述中，氧化铝结晶粒子中的O和Al的原子数之比O/Al也记载为氧化铝的结晶粒子中的O/Al比，有时也只称为O/Al比。此处，氧化铝烧结体是除了使用占80质量％以上的氧化铝之外，还含有例如氧化硅、氧化镁和氧化钙中的至少1种，并将这些作为烧结辅助剂烧成而成的。
其次，氧化铝如化学式Al2O3所表示，按定比组成来说，O/Al比为1.5。与此相对，由于通过本实施方式中的O/Al比低于1.5可以降低基板1的体积固有电阻率，因此可以在导体的形成、搬运等过程中减少由于与设备等的接触或摩擦导致基板1带静电的可能性。
此处，可以降低体积固有电阻率是指，对于烧结辅助剂成分及含量相同、余下部分含有氧化铝的氧化铝烧结体来说，O/Al比低于1.5的烧结体的体积固有电阻率小于O/Al比为1.5的烧结体的体积固有电阻率(例如1014Ω·cm)，体积固有电阻率的测定可以依照JISC2141-1992测定。另外，可以降低体积固有电阻率的原因可能是由于从Al2O3中失去的O(氧气)的影响、或过量Al(铝)的影响，但具体并不明确。
另外，本实施方式的发光元件安装用基板1优选在氧化铝的结晶粒子中，O/Al比为0.7以上且1.3以下。通过使该O/Al比为0.7以上且1.3以下，可以获得体积固有电阻率低、且具有高反射率的发光元件安装用基板1。
此处，氧化铝的结晶粒子中O/Al比是基于以下方法算出的。首先，作为预处理，对基板1的剖面进行镜面加工后使用离子铣削(ion milling)装置(GATAN制MODEL691)进行加工，使用透射电子显微镜(TEM、例如日本电子制JEM-2010F)以40，000倍～60，000倍的倍率进行观察，选择出任意10个氧化铝的结晶粒子。接着，通过附设的能量分散型X射线分光分析(EDS、例如Thermo Electron制NSS)，点径设为测定时间设为50秒、测定能量范围设为0.14～20.48keV，使用半定量计算方法作为薄膜近似法测定O和Al的原子％，通过得到的原子％计算各氧化铝的结晶粒子中的O/Al比，将其平均值作为氧化铝的结晶粒子中的O/Al比。
另外，本实施方式的发光元件安装用基板1的氧化铝的结晶粒子中的O/Al比为0.7以上且1.3以下时，有利用X射线衍射(CuKα射线)在α-氧化铝的104面产生波峰的入射角(2θ)进行评价的方法。根据α-氧化铝的JCPDS cards(#46-1212)，104面的波峰出现在2θ＝35.152°，但本实施方式的发光元件安装用基板1的氧化铝的结晶粒子中的O/Al比低于1.5时，104面的波峰向大角一侧(入射角大)移动，因此可以通过2θ的数值确认。具体来说，O/Al比为0.7以上且1.3以下时，2θ的数值出现在35.20°以上、35.35°以下的范围内。
另外，为了减少发光元件的静电破坏的可能性，同时抑制由于霹雷的影响、配线开关等故障造成基板1产生异常电压的情况下的电极间或配线间的短路，体积固有电阻率优选109～1012Ω·cm。
图2为表示本实施方式的发光元件安装用基板1的漫反射光的散射状态的示意图。另外，该示意图表示与表面1a垂直的剖面，如图2所示，以结晶大小的水平来观察本实施方式的发光元件安装用基板1时，其具有氧化铝的结晶粒子5、6和主要由烧结辅助剂成分组成的晶界相7。另外，晶界相7为氧化硅、氧化镁和氧化钙中的至少一种时，晶界相7以非晶态玻璃相存在。
从本实施方式的发光元件安装用基板1的表面1a侧照射的入射光11变成从表面1a朝特定方向反射的正反射光13a和从表面1a朝非特定方向反射的漫反射光13b，余下的光变成进入(透射)基板1内部的光11a。而且，进入该基板1内部的光11a在与晶界相7的边界，即氧化铝的结晶粒子5的界面5a，变成正反射光13c和漫反射光13d，余下的变成进一步进入基板1内部的光11a。
接着，进一步行进入基体1的内部的光11a在与晶界相7的边界，即氧化铝的结晶粒子6的界面6a，变成正反射光13e和漫反射光13f，余下的变成进一步进入基板1内部的光11a。正反射光13a、13c、13e，漫反射光13b、13d、13f在没有碰撞的结晶粒子的情况下就保持原样射出基体1外，若有碰撞的结晶粒子就在界面反复正反射、漫反射，透射结晶粒子，从而射出基体1外。
另外，本实施方式的发光元件安装用基板1优选氧化铝的结晶粒子的平均结晶粒径为0.7μm以上且2.0μm以下。氧化铝的结晶粒子的平均结晶粒径为0.7μm以上且2.0μm以下时，可以获得具有低体积固有电阻率、且反射率高的发光元件安装用基板1。这是由于含有体积固有电阻率高的非晶态玻璃相的晶界相7不会过多，可以增加反射光的界面。
此处，计算氧化铝的结晶粒子的平均结晶粒径的方法是，首先，对基板1的剖面进行镜面加工，在比基板1的烧成工序中的最高温度还低50～100℃的温度下烧蚀(fireetching)。接着通过使用扫描电镜(SEM，例如日本电子制JSM-7001F)以1000～3000倍的倍率拍摄图像，使用图像解析装置(例如三谷商事制Win ROOF)解析拍下的图像，从而求出氧化铝的各结晶粒子的面积，计算与该面积为相等面积的圆的直径(相当圆直径)，算出相当圆直径的平均值即可。
此外，本实施方式的发光元件安装用基板1的光反射率的测定是，使用分光光度计(例如株式会社岛津制作所制：UV-315和配件的积分球单元：ISR-3100)，光源使用50W卤灯和氘灯，波长范围设为200～1000nm，测定范围设为7×9mm，缝宽度设为20nm，不使用遮光片进行测定。予以说明，此处所述反射率为以用作基准的硫酸钡粉状体的反射率为100％时的相对值。
此外，本实施方式的发光元件安装用基板1优选晶界相不含有过渡金属。像这样晶界相不含有过渡金属时，可以抑制由于基板1暗色化造成的反射率降低，因此可以优选用于发光元件的安装用途。予以说明，本实施方式中对于晶界相是否含有过渡金属，采用与上述计算O/Al比时同样的测定方法，将碰撞点从结晶粒子变更为晶界相即可。
本实施方式的发光元件安装用基板1是除了不可避免的杂质以外的含有成分为氧化硅、氧化钙和氧化镁中的至少一种的烧结辅助剂成分时，以构成的所有成分为100质量％计，优选氧化铝占94质量％以上。氧化铝占94质量％以上时，由于构成晶界相7的烧结辅助剂导致玻璃相过度增长，这样可以抑制入射光11透射到基板1的背面造成反射率降低，因此可以保持入射光11的高反射率。
此外，应提高光的反射率而含有氧化钡时，除去该氧化钡以及烧结辅助剂成分和不可避杂质的余下部分采用氧化铝即可。
此外，本实施方式的发光元件安装用基板1的各成分的含量可以使用ICP(Inductively Coupled Plasma)发光分光分析装置或荧光X射线分析装置求出金属元素的量后，换算成各氧化物来计算。另外，氧化铝可以从100质量％减去其他氧化物含有成分的含量而算出，本实施方式中的氧化铝以该计算方法计算占80质量％以上。
图3为表示本实施方式的发光元件安装用基板上安装发光元件而成的发光装置的构成之一例的剖视图。如图所示，本实施方式的发光装置21是在本实施方式的发光元件安装用基板1上安装发光元件2而成的。
图3所示发光装置21中，在基板1的表面1a上形成有电极3a、3b，还有电极焊垫3c、3d，电极焊垫3a上安装了含有半导体的发光元件2，发光元件2和电极焊垫3d通过接合线4可电连接。另外，发光元件2的安装只要能电接合，使用导电性粘结剂的接合、通过接合线4的接合或通过钎焊料的接合都可以。
发光元件2、电极3a、3b、电极焊垫3c、3d和接合线4被含有树脂等的封固构件31覆盖。另外，电极3a、3b和焊垫电极3c、3d被透明的保护膜玻璃保护，封固构件31同时具有发光元件2的保护和透镜功能。另外，对于本实施方式的发光装置21，在本实施方式的基板1上安装发光元件2的构成是必须条件，但并不限于图3的构成。
基板1的另一侧表面的电极3a、3b(背面电极)通过连接外部的直流电源(未图示)或AC-DC开关电源(未图示)并接通电源发光元件2来发光。此时，封固构件31保护发光元件2，具备作为使光漫射和放射的透镜的功能，作为封固构件31也具备有选择性地改变光的波长的功能。
对于本实施方式的发光装置21，由于安装了发光元件2的本实施方式的发光元件安装用基板1的体积固有电阻率低，在导体的形成、搬运等过程中，由于与设备等的接触或摩擦而带静电的可能性小，因而安装时发光元件2的静电破坏的可能性小，所以可以作为可靠性高的发光装置21。
接下来说明本实施方式的发光元件安装用基板1的制造方法之一例。首先，准备平均粒径为0.5～1.8μm左右的氧化铝(Al2O3)粉末、作为烧结辅助剂的氧化硅、氧化钙(CaO)和氧化镁(MgO)中的至少一种粉末。接着，以氧化铝和烧结辅助剂的总量为100质量％计，称量合计6质量％以下的烧结辅助剂，余下部分为氧化铝作为起始原料。
接下来，将称量的起始原料放入具有高纯度的氧化铝珠的碾磨机等中，与水等溶剂同时粉碎并混合。接着，相对于起始原料100质量份，添加4～8质量份左右的含有石蜡、聚乙烯醇、聚乙二醇、丁缩醛树脂以及丙烯酸树脂等中的至少1种的成型用粘合剂(这些成型用粘合剂含有碳)，再旋转碾磨机混合得到料浆。
其次，使用该料浆，采用刮均涂装法(doctor blade method)形成薄片，或者使用将该料浆通过喷雾干燥器进行喷雾造粒而成的颗粒，通过公知的粉末压力成型法或滚压法(roll compaction)形成薄片。接下来，通过用于形成制品形状的模具或通过激光加工薄片得到成型体。考虑到基板1的量产性，该成型体优选多件同时加工的成型体。
接着，将得到的成型体在空气(氧化)气氛下进行脱脂，采用不活泼气体气氛(不活泼气体为氩气等)或氧气浓度气氛可以调整到5～20体积％的烧成炉(例如使用钨加热器的间歇式可控气氛电炉)，在1420～1650℃范围内的最高温度下进行烧成。
另外，O/Al比可以根据烧成气氛作调整，氧化铝的结晶粒子的平均结晶粒径可以根据起始原料的大小、烧成条件作调整。
以下、具体说明本发明的实施例，但本发明并不限定于以下实施例。
实施例1
首先，评价由于O/Al比的差异导致的体积固有电阻率的变化。
准备平均粒径为1.8μm的氧化铝(Al2O3)的粉末、作为烧结辅助剂的氧化硅(SiO2)、氧化钙(CaO)和氧化镁(MgO)粉末。接着，称量氧化铝94质量％、氧化硅3.5质量％、氧化钙1.5质量％、氧化镁1.0质量％，使用这些作为起始原料。向其中添加溶剂和含有丙烯酸树脂的成型用粘合剂，并混合得到料浆。此处，成型用粘合剂的添加量相对于起始原料100质量份为6质量份。
接下来，使用该料浆，采用公知的刮均涂装法形成薄片，通过用模具冲压该薄片而得到2个成型体。首先将其中一个成型体放入电炉，氧气浓度气氛调整到16体积％，同时在1500℃的最高温度下进行烧成，得到厚度为0.6mm的试料No.1的发光元件安装用基板。对于另一个成型体，烧成时以空气气氛为烧成气氛进行烧成，得到试料No.2的发光元件安装用基板。
接着，对于该得到的发光元件安装用基板，基于TEM-EDS的O/Al比的测定通过以下方法进行。
各试料的剖面经过镜面加工后使用离子铣削装置进行加工，使用TEM以50，000倍的倍率进行观察，选择出任意10个氧化铝的结晶粒子。使用附设的EDS，点径设为测定时间设为50秒、测定能量范围设为0.14～20.48keV，使用半定量计算方法作为薄膜近似法测定O和Al的原子％，通过得到的原子％计算各氧化铝的结晶粒子中的O/Al比，进而算出平均值。
其次，体积固有电阻率以JIS C2141-1992所述的体积固有电阻率测定为参考进行测定。
其结果是，试料No.1中O/Al比为0.92，体积固有电阻率为5×1011Ω·cm，试料No.2中，O/Al比为1.5，体积固有电阻率为1×1014Ω·cm。由该结果可知，通过使O/Al比低于1.5可以降低体积固有电阻率。
实施例2
接下来评价基于O/Al比的体积固有电阻率和反射率的变化。
首先，通过与实施例1同样的工序制造成型体。接着，使用电炉，根据试料将氧气浓度气氛调整到5～20体积％的范围，进行各成型体的烧成。另外，烧成在最高温度为1500℃的过程中进行，得到试料No.3～9的发光元件安装用基板。
接下来，采用与实施例1同样的方法对得到的该发光元件安装用基板进行O/Al比的计算和体积固有电阻率的测定。使用分光光度计，光源使用50W卤灯和氘灯，波长范围设定为500nm，测定范围设定为7×9mm，缝宽度设定为20nm，不使用遮光片测定反射率。另外，使用硫酸钡粉状体作为基准。
另外，对于各试料的综合评价，波长500nm的反射率为91％以上且体积固有电阻率低于1×1013Ω·cm的为“优”用A表示，不满足反射率为91％以上或体积固有电阻率低于1×1013Ω·cm任意一项的情况为“良”用B表示。得到的结果示于表1。
[表1]
从表1所示结果可知，对于试料No.4～7，由于O/Al比为0.7以上且1.3以下，所以反射率为91％以上，体积固有电阻率低于1×1013Ω·cm，是具有低体积固有电阻率和高反射率的发光元件安装用基板。
实施例3
接下来，对由于氧化铝的结晶粒子的平均结晶粒径的差异造成的体积固有电阻率和反射率的变化进行评价。
首先，通过与实施例1同样的工序制造成型体。接着，使用电炉将氧气浓度气氛调整到12体积％，根据试料将烧成过程中的最高温度调整到1450℃～1550℃进行烧成。由此得到试料No.10～16的发光元件安装用基板。
接着，对体积固有电阻率采用与实施例1同样的方法进行测定，对反射率采用与实施例2同样的方法进行测定。其次，对平均结晶粒径采用以下方法进行测定。
首先，对各试料的剖面进行镜面加工，在比各试料的烧成工序中的最高温度还低80℃的温度下烧蚀。接着，通过使用SEM以2500倍的倍率拍摄图像，使用图像解析装置解析拍下的图像，从而求出氧化铝的各结晶粒子的面积，计算与该面积为相等面积的圆的直径(相当圆直径)，算出相当圆直径的平均值作为平均结晶粒径。得到的结果示于表2。
[表2]
如表2所示，试料No.12～15得到反射率为92％以上这样高的结果，由此可知，通过使氧化铝的结晶粒子的平均结晶粒径为0.7μm以上且2.0μm以下，可以得到体积固有电阻率低且具有高反射率的发光元件安装用基板。
实施例4
接下来，评价晶界相中过渡金属存在的有无对反射率的影响。
作为两种氧化铝粉末，准备了粉末A、粉末B。使用了这些粉末A、B以外，通过与实施例2的试料No.6同样的工序得到烧结体。使用粉末A制作的烧结体作为试料No.17，使用粉末B制作的烧结体作为试料No.18。
接着，将实施例1中实施的基于TEM-EDS的O/Al比的测定时选择的观测点从结晶粒子变更为晶界相进行晶界相的定性分析。另外，通过与实施例2同样的方法测定了反射率。
其结果是，试料No.17、18的晶界相都检测出O、Al、Si、Ca、Mg，只有试料No.17检测出Fe。另外，试料No.17的反射率为90.8％，试料No.18的反射率为91.8％。结果可知，作为用于发光元件的安装的基板优选晶界相中不含有过渡金属。
实施例5
接下来，对在发光元件安装用基板1安装发光元件2时的静电破坏的影响进行评价。
首先，通过使用实施例1中制备的试料No.1、2，形成电极3a、电极焊垫3c等，并安装发光元件2制作发光装置。接着，本实施例中，元件发光的有无视为静电破坏的影响，各对200个进行确认。结果是，与在试料No.1安装有发光元件的发光装置相比，在试料No.2安装有发光元件的发光装置中明显不发光元件的数量少。由此可知，由于发光元件安装用基板1的体积固有电阻率低，可以降低在导体的形成、搬运等过程中由于与设备等的接触或摩擦而带静电的可能性，通过使用这样的发光元件安装用基板1，能够减少安装时发光元件2的静电破坏的可能性，因此可以成为高可靠性的发光装置。
符号说明
1：发光元件安装用基板(基板)
1a：表面
1b：另一侧表面
2：发光元件
3：导体
3a、3b：电极
3c、3d：电极焊垫
4：接合线
5、6：氧化铝的结晶粒子
5a、6a：界面
7：晶界相(玻璃相)
11：入射光
11a：进入内部的光
13：反射光
13a、13c、13e：正反射光
13b、13d、13f：漫反射光
21：发光装置
31：封固构件

Claims (4)

1.一种发光元件安装用基板，其特征在于，其含有以构成的所有成分为100质量％时氧化铝占80质量％以上的氧化铝质烧结体，所述氧化铝的结晶粒子中的O和Al的原子数之比O/Al为0.7以上且1.3以下，所述氧化铝质烧结体的体积固有电阻率为109～1012Ω·cm。
2.如权利要求1所述的发光元件安装用基板，其特征在于，所述氧化铝的结晶粒子的平均结晶粒径为0.7μm以上且2.0μm以下。
3.如权利要求1或2所述的发光元件安装用基板，其特征在于，晶界相不含有过渡金属。
4.一种发光装置，其特征在于，是在权利要求1～3中任意一项所述的发光元件安装用基板安装发光元件而成的。
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