CN103824913B - A kind of Mg doped p-type GaN epitaxy growing method - Google Patents
A kind of Mg doped p-type GaN epitaxy growing method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000000407 epitaxy Methods 0.000 title claims abstract description 17
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 24
- 239000002131 composite material Substances 0.000 claims abstract description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002019 doping agent Substances 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 3
- 239000011777 magnesium Substances 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 13
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000005984 hydrogenation reaction Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000001629 suppression Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XZGYRWKRPFKPFA-UHFFFAOYSA-N methylindium Chemical compound [In]C XZGYRWKRPFKPFA-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of Mg doped p-type GaN epitaxy growing method, its diode epitaxial chip architecture order from bottom to top is followed successively by: substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type GaN layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, p-type variable doped layer, between InGaN/GaN multiple quantum well light emitting layer and p-type AlGaN, growth has the low temperature p-type gallium nitride layer of In doping, In can be separated out by p-type AlGaN layer completely that connect lower growth, it is greatly improved hole concentration, low-temperature epitaxy p-type gallium nitride layer after p-type AlGaN layer simultaneously, low temperature p-type gallium nitride layer can suppress the diffusion of P-type dopant；The outward appearance that the present invention is brought after being effectively improved contact layer is not enough, improves appearance form, improves appearance ratings；Improve crystalline quality, the reduction to voltage provides sufficient space simultaneously；Additionally, improve the activity function of Mg, improve hole concentration, can improve to 1015 1016cm‑3, mobility reaches 10cm2/ v.s, doping efficiency reaches 3 5%.
Description
Technical field
The present invention relates to semicon industry LED epitaxy technique process technique field, be specially a kind of Mg doping P
Type GaN epitaxy growing method.
Background technology
The most all there is a lot of problem, such as in mixing of Mg: hole concentration is relatively low, resistivity is higher, brilliant
Weight is bad.And variable doping by electricity, optics, Analysis of Surface Topography show, protect
Under the precondition of card crystal mass, this kind of variable doping method significantly improves hole concentration, reduces resistance
Rate, improves hole mobility, obtains preferable surface topography.At present LED epitaxial growth for magnesium addition from
Compensating effect is obvious, and the hole concentration of the gallium nitride-based material generally mixing magnesium only has 1017-1018cm-3,
Mobility is less than 10cm2/ v.s, doping efficiency only has 0.1-1%, it is impossible to meet requirement on devices very well, i.e.
Magnesium is by during separately as P-type dopant, it is difficult to obtain high-quality, the p-type gallium nitride material of high hole concentration.
Prior art is not enough: the activation efficiency of magnesium is low, and doping efficiency is low, and hole concentration is the highest, and magnesium is to MQW
Active area spreads, all light emitting diode is produced and have a strong impact on.The In that this patent is taked adulterates and low temperature
Growth P-type GaN epitaxy method, can grow the p-type nitrogen of high-quality, apperance grade, high hole concentration
Change gallium material.
Summary of the invention
Technical problem solved by the invention is to provide a kind of Mg doped p-type GaN epitaxy growing method, with
Solve the problem in above-mentioned background technology.
Technical problem solved by the invention realizes by the following technical solutions: a kind of Mg doped p-type GaN
Epitaxial growth method, its diode epitaxial chip architecture order from bottom to top is followed successively by: substrate, middle temperature GaN are slow
Rush layer, N-type GaN layer, shallow SQW, composite quantum well layer, p-type GaN layer, p-type AlGaN layer, P
Type GaN layer, p-type contact layer, p-type variable doped layer, in InGaN/GaN multiple quantum well light emitting layer and p-type
Between AlGaN, growth has the low temperature p-type gallium nitride layer of In doping, and the p-type AlGaN layer connecing lower growth can
In is separated out completely, is greatly improved hole concentration, low-temperature epitaxy p-type nitridation after p-type AlGaN layer simultaneously
Gallium layer, low temperature p-type gallium nitride layer can suppress the diffusion of P-type dopant, and its concrete growing method is:
(1) being annealed in hydrogen atmosphere by backing material, clean substrate surface, temperature is
1040-1180 DEG C, then carry out nitrogen treatment；
(2) middle temperature buffer growth: after terminating after substrate hydrogenation treatment, underlayer temperature is increased to
650-850 DEG C, row thermal anneal process again, annealing time is 10-20min, after annealing, temperature is regulated
To 750-900 DEG C, under the conditions of V/III mol ratio is 400-2800, epitaxial growth thickness is 0.6-1.5um
Between high temperature undope GaN, in this growth course, growth pressure is 300-450Torr；
(3) N-type layer growth: after middle temperature buffer growth terminates, the N-type that one layer of doping content of growth is stable
Layer, thickness is 1.2-4.2um, and growth temperature is 1000-1200 DEG C, and growth pressure is 300-450Torr,
V/III mol ratio is 400-2800；
(4) shallow SQW SW growth: many by InxGa1-XN (0.04 < x < the 0.4)/GaN in 6-12 cycle
SQW forms, and wherein the thickness of trap is 2-5nm, and growth temperature is 700-900 DEG C, and growth pressure is 100-600
Torr, V/III mol ratio is 350-43000；
(5) composite quantum well layer MQW growth: many by InyGa1-yN (x < y < the 1)/GaN in 3-15 cycle
SQW forms, and in trap, the component of In is 10%-50%, and the thickness of trap is 2-5nm, and growth temperature is
720-820 DEG C, growth pressure is 100-500Torr, and V/III mol ratio is 350-4300, barrier layer thickness
For 10-15nm, growth temperature is 820-920 DEG C, and growth pressure is 100-500Torr, V/III mol ratio
For 350-4300；
(6) P-type layer growth: after the growth of luminescent layer multiple quantum well layer terminates, growth thickness is 10-100nm's
In doped p type GaN layer, growth temperature is 620-820 DEG C, and growth time is 5-35min, growth pressure
For 100-500Torr, V/III mol ratio is 300-5000, during growing P-type layer, and N2As
Carrier gas；
(7) P-type layer growth: after P-type layer growth terminates, growth thickness is p-type AlGaN of 16-35nm
Layer, growth temperature is 950-1150 DEG C, and growth time is 9-12min, and growth pressure is 150-500Torr,
V/III mol ratio be the component of 1480-13800, Al be 15%-25%；
(8) P-type layer growth: after P-type layer growth terminates, growth thickness is p-type GaN of 100-800nm
Layer, growth temperature is 850-950 DEG C, and growth time is 5-30min, and growth pressure is 100-500Torr,
V/III mol ratio is 350-4300；
(9) P-type layer growth: after P-type layer growth terminates, growth thickness is the P type contact layer of 5-20nm,
Growth temperature is 850-1050 DEG C, and growth time is 1-10min, and growth pressure is 200-450Torr, V/
III mol ratio is 1480-13800；
(10) p-type variable doped layer growth, after P-type layer growth terminates, growth thickness is 10-18nm's
Variable doped layer, growth temperature is 550-650 DEG C, point three phases growth, the first stage: pressure is
550-600Torr, flow is 400-450sccm/min；Second stage: pressure is 300-400Torr, flow
For 240-260sccm/min；Phase III: pressure is 150-200Torr, flow is 350-500sccm/min,
V/III mol ratio is 1480-13800；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 400-700 DEG C, uses purity nitrogen atmosphere
Enclosing and carry out making annealing treatment 5-10min, be subsequently reduced to room temperature, epitaxial manufacture process terminates.
Described substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type
GaN layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, p-type variable doped layer with trimethyl gallium (TMGa),
Triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH3) respectively as
Ga, Al, In and N source.
Described substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type
GaN layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, p-type variable doped layer are with silane (SiH4)
With two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant.
Described substrate is sapphire, monocrystal silicon.
Compared with disclosed technology, there is advantages below in the present invention: the present invention is carried after being effectively improved contact layer
The outward appearance come is not enough, improves appearance form, improves appearance ratings；Improve crystalline quality, to electricity simultaneously
The reduction of pressure provides sufficient space；Additionally, improve the activity function of Mg, improve hole concentration, permissible
Improve to 1015-1016cm-3, mobility reaches 10cm2/ v.s, doping efficiency reaches 3-5%.
Detailed description of the invention
In order to make the technological means of the present invention, creation characteristic, workflow, using method reach purpose and merit
Effect is easy to understand, and below in conjunction with the embodiment of the present invention, enters the technical scheme in the embodiment of the present invention
Row clearly and completely describes, it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
The every other embodiment obtained under creative work premise, broadly falls into the scope of protection of the invention.
Embodiment 1
A kind of Mg doped p-type GaN epitaxy growing method, its diode epitaxial chip architecture order from bottom to top
It is followed successively by: substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type
GaN layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, p-type variable doped layer, it specifically grows
Method is:
(1) being annealed in hydrogen atmosphere by backing material, clean substrate surface, temperature is 1040 DEG C,
Then nitrogen treatment is carried out；
(2) middle temperature buffer growth: after terminating after substrate hydrogenation treatment, underlayer temperature is increased to
650 DEG C, row thermal anneal process again, annealing time is 10min, after annealing, regulates temperature to 750 DEG C,
Under the conditions of V/III mol ratio is 400, epitaxial growth thickness is that the high temperature between 0.6um undopes GaN, and this is raw
In growth process, growth pressure is 300Torr；
(3) N-type layer growth: after middle temperature buffer growth terminates, the N-type that one layer of doping content of growth is stable
Layer, thickness is 1.2um, and growth temperature is 1000 DEG C, and growth pressure is 300Torr, V/III mol ratio
It is 400；
(4) shallow SQW SW growth: by InxGa1-XN (0.04 < x < the 0.4)/GaN volume in 6 cycles
Sub-trap forms, and wherein the thickness of trap is 2nm, and growth temperature is 700 DEG C, and growth pressure is 100Torr, and V
/ III mol ratio is 350；
(5) composite quantum well layer MQW growth: by InyGa1-yN (x < y < the 1)/GaN volume in 3 cycles
Sub-trap forms, and in trap, the component of In is 10%, and the thickness of trap is 2nm, and growth temperature is 720 DEG C, growth pressure
Power is 100Torr, and V/III mol ratio is 350, and barrier layer thickness is 10nm, and growth temperature is 820 DEG C, raw
Long pressure is 100Torr, and V/III mol ratio is 350；
(6) P-type layer growth: after the growth of luminescent layer multiple quantum well layer terminates, growth thickness is the In of 10nm
Doped p type GaN layer, growth temperature is 620 DEG C, and growth time is 5min, and growth pressure is 100Torr,
V/III mol ratio is 300, during growing P-type layer, and N2As carrier gas；
(7) P-type layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 16nm,
Growth temperature is 950 DEG C, and growth time is 9min, and growth pressure is 150Torr, and V/III mol ratio is
The component of 1480, Al is 15%；
(8) P-type layer growth: after P-type layer growth terminates, growth thickness is the p-type GaN layer of 100nm,
Growth temperature is 850 DEG C, and growth time is 5min, and growth pressure is 100Torr, and V/III mol ratio is
350；
(9) P-type layer growth: after P-type layer growth terminates, growth thickness is the P type contact layer of 5nm, raw
Long temperature is 850 DEG C, and growth time is 1min, and growth pressure is 200Torr, and V/III mol ratio is 1480；
(10) p-type variable doped layer growth, after P-type layer growth terminates, growth thickness is the change of 10nm
Amount doped layer, growth temperature is 550 DEG C, point three phases growth, the first stage: pressure is 550Torr,
Flow is 400sccm/min；Second stage: pressure is 300Torr, flow is 240sccm/min；3rd rank
Section: pressure is 150Torr, and flow is 350sccm/min, and V/III mol ratio is 1480；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 400 DEG C, uses pure nitrogen gas atmosphere to enter
Row annealing 5min, is subsequently reduced to room temperature, and epitaxial manufacture process terminates.
With trimethyl gallium (TMGa) in the present embodiment, triethyl-gallium (TEGa), trimethyl aluminium (TMAl), three
Methyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In and N source, with silane (SiH4) and
Two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant, using sapphire as substrate.
Embodiment 2
A kind of Mg doped p-type GaN epitaxy growing method, its diode epitaxial chip architecture order from bottom to top
It is followed successively by: substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type
GaN layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, p-type variable doped layer, it specifically grows
Method is:
(1) being annealed in hydrogen atmosphere by backing material, clean substrate surface, temperature is 1180 DEG C,
Then nitrogen treatment is carried out；
(2) middle temperature buffer growth: after terminating after substrate hydrogenation treatment, underlayer temperature is increased to
850 DEG C, row thermal anneal process again, annealing time is 20min, after annealing, regulates temperature to 900 DEG C,
Under the conditions of V/III mol ratio is 2800, epitaxial growth thickness is that the high temperature between 1.5um undopes GaN, this
In growth course, growth pressure is 450Torr；
(3) N-type layer growth: after middle temperature buffer growth terminates, the N-type that one layer of doping content of growth is stable
Layer, thickness is 4.2um, and growth temperature is 1200 DEG C, and growth pressure is 450Torr, V/III mol ratio
It is 2800；
(4) shallow SQW SW growth: by InxGa1-XN (0.04 < x < the 0.4)/GaN volume in 12 cycles
Sub-trap forms, and wherein the thickness of trap is 5nm, and growth temperature is 900 DEG C, and growth pressure is 600Torr, and V
/ III mol ratio is 43000；
(5) composite quantum well layer MQW growth: by InyGa1-yN (x < y < the 1)/GaN volume in 15 cycles
Sub-trap forms, and in trap, the component of In is 50%, and the thickness of trap is 5nm, and growth temperature is 820 DEG C, growth pressure
Power is 500Torr, and V/III mol ratio is 4300, and barrier layer thickness is 15nm, and growth temperature is 920 DEG C,
Growth pressure is 500Torr, and V/III mol ratio is 4300；
(6) P-type layer growth: after the growth of luminescent layer multiple quantum well layer terminates, growth thickness is the In of 100nm
Doped p type GaN layer, growth temperature is 820 DEG C, and growth time is 35min, and growth pressure is 500Torr,
V/III mol ratio is 5000, during growing P-type layer, and N2As carrier gas；
(7) P-type layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 35nm,
Growth temperature is 1150 DEG C, and growth time is 12min, and growth pressure is 500Torr, V/III mol ratio
Being 13800, the component of Al is 25%；
(8) P-type layer growth: after P-type layer growth terminates, growth thickness is the p-type GaN layer of 800nm,
Growth temperature is 950 DEG C, and growth time is 30min, and growth pressure is 500Torr, and V/III mol ratio is
4300；
(9) P-type layer growth: after P-type layer growth terminates, growth thickness is the P type contact layer of 20nm, raw
Long temperature is 1050 DEG C, and growth time is 10min, and growth pressure is 450Torr, and V/III mol ratio is
13800；
(10) p-type variable doped layer growth, after P-type layer growth terminates, growth thickness is the change of 18nm
Amount doped layer, growth temperature is 650 DEG C, point three phases growth, the first stage: pressure is 600Torr,
Flow is 450sccm/min；Second stage: pressure is 400Torr, flow is 260sccm/min；3rd rank
Section: pressure is 200Torr, and flow is 500sccm/min, and V/III mol ratio is 13800；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 700 DEG C, uses pure nitrogen gas atmosphere to enter
Row annealing 10min, is subsequently reduced to room temperature, and epitaxial manufacture process terminates.
With trimethyl gallium (TMGa) in the present embodiment, triethyl-gallium (TEGa), trimethyl aluminium (TMAl), three
Methyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In and N source, with silane (SiH4) and
Two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant, using monocrystal silicon as substrate.
Embodiment 3
A kind of Mg doped p-type GaN epitaxy growing method, its diode epitaxial chip architecture order from bottom to top
It is followed successively by: substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type
GaN layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, p-type variable doped layer, it specifically grows
Method is:
(1) being annealed in hydrogen atmosphere by backing material, clean substrate surface, temperature is 1090 DEG C,
Then nitrogen treatment is carried out；
(2) middle temperature buffer growth: after terminating after substrate hydrogenation treatment, underlayer temperature is increased to
680 DEG C, row thermal anneal process again, annealing time is 15min, after annealing, regulates temperature to 800 DEG C,
Under the conditions of V/III mol ratio is 800, epitaxial growth thickness is that the high temperature between 0.9um undopes GaN, and this is raw
In growth process, growth pressure is 350Torr；
(3) N-type layer growth: after middle temperature buffer growth terminates, the N-type that one layer of doping content of growth is stable
Layer, thickness is 1.8um, and growth temperature is 1100 DEG C, and growth pressure is 350Torr, V/III mol ratio
It is 800；
(4) shallow SQW SW growth: by InxGa1-XN (0.04 < x < the 0.4)/GaN volume in 8 cycles
Sub-trap forms, and wherein the thickness of trap is 3nm, and growth temperature is 800 DEG C, and growth pressure is 500Torr, and V
/ III mol ratio is 430；
(5) composite quantum well layer MQW growth: by InyGa1-yN (x < y < the 1)/GaN volume in 10 cycles
Sub-trap forms, and in trap, the component of In is 40%, and the thickness of trap is 4nm, and growth temperature is 750 DEG C, growth pressure
Power is 400Torr, and V/III mol ratio is 430, and barrier layer thickness is 12nm, and growth temperature is 880 DEG C,
Growth pressure is 300Torr, and V/III mol ratio is 4200；
(6) P-type layer growth: after the growth of luminescent layer multiple quantum well layer terminates, growth thickness is the In of 50nm
Doped p type GaN layer, growth temperature is 720 DEG C, and growth time is 30min, and growth pressure is 300Torr,
V/III mol ratio is 4000, during growing P-type layer, and N2As carrier gas；
(7) P-type layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 20nm,
Growth temperature is 1000 DEG C, and growth time is 10min, and growth pressure is 300Torr, V/III mol ratio
Being 12800, the component of Al is 20%；
(8) P-type layer growth: after P-type layer growth terminates, growth thickness is the p-type GaN layer of 600nm,
Growth temperature is 900 DEG C, and growth time is 20min, and growth pressure is 300Torr, and V/III mol ratio is
430；
(9) P-type layer growth: after P-type layer growth terminates, growth thickness is the P type contact layer of 15nm, raw
Long temperature is 950 DEG C, and growth time is 8min, and growth pressure is 350Torr, and V/III mol ratio is 10800；
(10) p-type variable doped layer growth, after P-type layer growth terminates, growth thickness is the change of 15nm
Amount doped layer, growth temperature is 600 DEG C, point three phases growth, the first stage: pressure is 580Torr,
Flow is 420sccm/min；Second stage: pressure is 380Torr, flow is 250sccm/min；3rd rank
Section: pressure is 180Torr, and flow is 400sccm/min, and V/III mol ratio is 10000；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 550 DEG C, uses pure nitrogen gas atmosphere to enter
Row annealing 8min, is subsequently reduced to room temperature, and epitaxial manufacture process terminates.
With trimethyl gallium (TMGa) in the present embodiment, triethyl-gallium (TEGa), trimethyl aluminium (TMAl), three
Methyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In and N source, with silane (SiH4) and
Two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant, using monocrystal silicon as substrate.
The outward appearance that the present invention is brought after being effectively improved contact layer is not enough, improves appearance form, improves outward appearance
Grade；Improve crystalline quality, the reduction to voltage provides sufficient space simultaneously；Additionally, improve Mg's
Activity function, improves hole concentration, can improve to 1015-1016cm-3, mobility reaches 10cm2/ v.s,
Doping efficiency reaches 3-5%.
The ultimate principle of the present invention, principal character and advantages of the present invention have more than been shown and described.The industry
Skilled person will appreciate that, the present invention is not restricted to the described embodiments, in above-described embodiment and description
The principle that the present invention is simply described described, without departing from the spirit and scope of the present invention, the present invention
Also having various changes and modifications, these changes and improvements both fall within scope of the claimed invention.This
The claimed scope of invention is defined by appending claims and equivalent thereof.
Claims (4)
1. a Mg doped p-type GaN epitaxy growing method, its diode epitaxial chip architecture from bottom to top suitable
Sequence is followed successively by: substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, P
The low temperature P-GAN layer of type GaN layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, IN doping,
It is characterized in that: between InGaN/GaN multiple quantum well light emitting layer and p-type AlGaN, growth has In doping
Low temperature p-type gallium nitride layer, In can be separated out by p-type AlGaN layer completely that connect lower growth, is greatly improved sky
Cave concentration, simultaneously low-temperature epitaxy p-type gallium nitride layer after p-type AlGaN layer, low temperature p-type gallium nitride layer can
The diffusion of suppression P-type dopant, its concrete growing method is:
(1) being annealed in hydrogen atmosphere by backing material, clean substrate surface, temperature is
1040-1180 DEG C, then carry out nitrogen treatment；
(2) middle temperature buffer growth: after terminating after substrate hydrogenation treatment, underlayer temperature is increased to
650-850 DEG C, row thermal anneal process again, annealing time is 10-20min, after annealing, temperature is regulated
To 750-900 DEG C, under the conditions of V/III mol ratio is 400-2800, epitaxial growth thickness is 0.6-1.5um
Between high temperature undope GaN, in this growth course, growth pressure is 300-450Torr；
(3) N-type layer growth: after middle temperature buffer growth terminates, the N-type that one layer of doping content of growth is stable
Layer, thickness is 1.2-4.2um, and growth temperature is 1000-1200 DEG C, and growth pressure is 300-450Torr,
V/III mol ratio is 400-2800；
(4) shallow SQW SW growth: many by InxGa1-XN (0.04 < x < the 0.4)/GaN in 6-12 cycle
SQW forms, and wherein the thickness of trap is 2-5nm, and growth temperature is 700-900 DEG C, and growth pressure is 100-600
Torr, V/III mol ratio is 350-43000；
(5) composite quantum well layer MQW growth: many by InyGa1-yN (x < y < the 1)/GaN in 3-15 cycle
SQW forms, and in trap, the component of In is 10%-50%, and the thickness of trap is 2-5nm, and growth temperature is
720-820 DEG C, growth pressure is 100-500Torr, and V/III mol ratio is 350-4300, barrier layer thickness
For 10-15nm, growth temperature is 820-920 DEG C, and growth pressure is 100-500Torr, V/III mol ratio
For 350-4300；
(6) P-type layer growth: after the growth of luminescent layer multiple quantum well layer terminates, growth thickness is 10-100nm's
In doped p type GaN layer, growth temperature is 620-820 DEG C, and growth time is 5-35min, growth pressure
For 100-500Torr, V/III mol ratio is 300-5000, during growing P-type layer, and N2As
Carrier gas；
(7) P-type layer growth: after P-type layer growth terminates, growth thickness is p-type AlGaN of 16-35nm
Layer, growth temperature is 950-1150 DEG C, and growth time is 9-12min, and growth pressure is 150-500Torr,
V/III mol ratio be the component of 1480-13800, Al be 15%-25%；
(8) P-type layer growth: after P-type layer growth terminates, growth thickness is p-type GaN of 100-800nm
Layer, growth temperature is 850-950 DEG C, and growth time is 5-30min, and growth pressure is 100-500Torr,
V/III mol ratio is 350-4300；
(9) P-type layer growth: after P-type layer growth terminates, growth thickness is the P type contact layer of 5-20nm,
Growth temperature is 850-1050 DEG C, and growth time is 1-10min, and growth pressure is 200-450Torr, V/
III mol ratio is 1480-13800；
(10) the low temperature P-GAN layer growth of IN doping, after P-type layer growth terminates, growth thickness is
The variable doped layer of 10-18nm, growth temperature is 550-650 DEG C, point three phases growth, the first stage:
Pressure is 550-600Torr, and flow is 400-450sccm/min；Second stage: pressure is 300-400Torr,
Flow is 240-260sccm/min；Phase III: pressure is 150-200Torr, flow is
350-500sccm/min, V/III mol ratio is 1480-13800；
(11) after epitaxial growth terminates, the temperature of reative cell is down to 400-700 DEG C, uses purity nitrogen atmosphere
Enclosing and carry out making annealing treatment 5-10min, be subsequently reduced to room temperature, epitaxial manufacture process terminates.
A kind of Mg doped p-type GaN epitaxy growing method the most according to claim 1, it is characterised in that:
Described substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type GaN
The low temperature P-GAN layer that layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, IN adulterate is with trimethyl
Gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH3)
Respectively as Ga, Al, In and N source.
A kind of Mg doped p-type GaN epitaxy growing method the most according to claim 1, it is characterised in that:
Described substrate, middle temperature GaN cushion, N-type GaN layer, shallow SQW, composite quantum well layer, p-type GaN
The low temperature P-GAN layer that layer, p-type AlGaN layer, p-type GaN layer, p-type contact layer, IN adulterate is with silane (SiH4)
With two cyclopentadienyl magnesium (CP2Mg) respectively as N, P-type dopant.
A kind of Mg doped p-type GaN epitaxy growing method the most according to claim 1, it is characterised in that:
Described substrate is sapphire, monocrystal silicon.
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