CN103824880A - 双轴张应变GeSn n沟道隧穿场效应晶体管 - Google Patents
双轴张应变GeSn n沟道隧穿场效应晶体管 Download PDFInfo
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- 229910005898 GeSn Inorganic materials 0.000 title claims abstract description 39
- 230000005641 tunneling Effects 0.000 title claims abstract description 18
- 230000005669 field effect Effects 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种带有双轴张应变的GeSnn沟道隧穿场效应晶体管(10),其结构包括衬底(101)、源极(102)、漏极(104)、GeSnn沟道(103)、绝缘介电质薄膜(105)以及栅电极(106)。源极、n沟道、漏极形成竖直的器件结构。源极区域材料的晶格常数比GeSnn沟道(103)晶格常数大。GeSnn沟道形成XY面内的双轴张应变,这种应变有利于沟道GeSn从间接带隙转变为直接带隙,从而发生直接量子隧穿,隧穿电流增大,进而提高器件性能。
Description
技术领域
本发明涉及一种双轴张应变GeSn n沟道TFET(TunnelingField-effect Transistor:隧穿场效应晶体管)。
背景技术
随着集成电路的进一步发展,芯片特征尺寸的进一步缩小,单个芯片上集成的器件数目的增多,功耗越来越成为人们所关注的问题。根据ITRS数据显示,当特征尺寸缩小到32nm节点时,功耗会是预计趋势的8倍,即随着特征尺寸的逐步缩小,传统的MOS器件就功耗方面将不能满足需求(Nature,vol479,329-337,2011)。另外,MOSFET尺寸的减小面临着室温下亚阈值斜率最小为60mv/decade的限制。基于量子隧穿效应的隧穿场效应晶体管与MOSFET相比,没有亚阈值斜率最小为60mv/decade的限制,并且可以有效的降低功耗。但如何增大隧穿几率、增大隧穿电流成为TFET研究的重点。理论和实验已经证明直接隧穿比间接隧穿具有更大的隧穿几率(Journal of applied physics 113,194507,2013)。
理论证实,当Sn的组分达到6.5%~11%时,弛豫的GnSn材料会转变为直接带隙(Journal of Applied Physics113,073707,2013)。此时则会在源与沟道之间形成直接隧穿,有效的增大隧穿几率,增大隧穿电流,提高器件的性能。但是,Sn组分的增加会使整个材料的质量以及热稳定性变差,通过增加Sn的组分得到直接带隙的GeSn是困难的。理论计算显示,GeSn中引入双轴张应变有利于材料向直接带隙的转变。(Appl.Phys.Lett.,vol.98,no.1,pp.011111-1-011111-3,2011)。
发明内容
本发明的目的是提出一种双轴张应变的GeSn n沟道的隧穿场效应晶体管(TFET)的结构。其中源极区域材料的晶格常数比沟道材料的晶格常数大,形成沿沟道方向的单轴压应变,沿垂直沟道的平面内的双轴张应变。这种应变有利于沟道GeSn由间接带隙转变为直接带隙,在源与沟道之间形成直接量子隧穿,增大隧穿几率,从而增大隧穿电流,进而提高器件性能。
为实现发明目的,本发明提出以下技术方案:
一种双轴张应变的GeSn n沟道的隧穿场效应晶体管,其具有一GeSn n沟道、一衬底、一源极、一漏极、一绝缘介电质薄膜、一栅极。
所述源极是通过外延生长或是键合的方式生长在衬底上,其材料为弛豫的单晶半导体材料GeSn,源极、 n沟道、漏极形成竖直的器件结构;
所述绝缘介电质薄膜环绕生长在GeSn n沟道上;
所述栅电极覆盖在绝缘介电质薄膜上;
所述源极材料的晶格常数比 n沟道GeSn晶格常数大;形成沿沟道方向的单轴压应变,沿垂直沟道的平面内的双轴张应变。
本发明的隧穿场效应晶体管能够在GeSn沟道形成XY面内的双轴张应变,这种应变有利于 n沟道GeSn从间接带隙转变为直接带隙,从而发生直接量子隧穿,隧穿电流增大,进而提高器件性能。
附图说明
图1为GeSn n沟道TFET的XZ面剖面图。
图2为GeSn n沟道TFET制造的第一步。
图3为GeSn n沟道TFET制造的第二步。
图4为GeSn n沟道TFET制造的第三步。
图5为GeSn n沟道TFET制造的第四步。
图6为GeSn n沟道TFET制造的第六步。
具体实施方式
为了更为清晰地了解本发明的技术实质,以下结合附图和实施例详细说明本发明的结构和工艺实现:
参见图1所示的双轴张应变GeSn n沟道隧穿场效应晶体管,其包括:
一衬底101,材料为单晶Ge;
一 n沟道103,材料为单晶GeSn,通式为Ge1-x Sn x (0≤y≤0.25),如采用Ge0.95Sn0.05;
一源极102,材料为单晶GeSn,通式为Ge1-y Sn y (0<x≤0.25,x>y)如可采用Ge0.9Sn0.1
一绝缘介电质薄膜105,生长在沟道上,如采用H-k(高k值)材料二氧化铪HfO2;
一栅电极106,覆盖在所述绝缘介电质薄膜上;
一漏极104,材料为单晶Ge。
参见图2-图6,为双轴张应变GeSn n沟道TFET(10)的制造过程:
第一步,如图2所示,在衬底101上外延生长一层弛豫的单晶材料作源极102;
第二步,如图3所示,在源极102上生长 n沟道103;
第三步,如图4所示,在 n沟道103上外延生长Ge漏极104;
第四步,如图5所示,利用光刻或刻蚀形成竖直器件结构;
第五步,如图6所示,在 n沟道上环绕生成绝缘介质薄膜105和栅电极106。
虽然本发明已以实例公开如上,然其并非用以限定本分明,如果对发明的各种改动或变形不脱离本发明的精神和范围,这些改动和变形在本发明的权利要求和等同技术范围之内,则本发明也意图包含这些改动和变形,本发明的保护范围当视权利要求为准。
Claims (4)
1.一种带有双轴张应变的GeSn n沟道隧穿场效应晶体管,其特征在于,具有一GeSn n沟道、一衬底、一源极、一漏极、一绝缘介质薄膜、一栅电极;
所述源极是通过外延生长或是键合的方式生长在衬底上,其材料为弛豫的单晶半导体材料GeSn,源极、n沟道、漏极形成竖直的器件结构;
所述绝缘介电质薄膜环绕生长在GeSn n沟道上;
所述栅电极覆盖在绝缘介电质薄膜上;
所述源极材料的晶格常数比 n沟道GeSn晶格常数大;形成沿沟道方向的单轴压应变,沿垂直沟道的平面内的双轴张应变。
2.如权利要求1所述的带有双轴张应变的GeSn n沟道隧穿场效应晶体管,其特征在于,所述 n沟道GeSn材料的通式为Ge1-x Sn x, 其中0≤x≤0.25。
3.如权利要求2所述的带有双轴张应变的GeSn n沟道隧穿场效应晶体管,其特征在于,所述源极GeSn材料的通式为Ge1-y Sn y 其中,0≤y≤0.25,y>x。
4.如权利要求3所述的带有双轴张应变的GeSn n沟道隧穿场效应晶体管,其特征在于,所述衬底和漏极采用的是单晶Ge材料。
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Cited By (4)
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CN105070755A (zh) * | 2015-08-11 | 2015-11-18 | 西安电子科技大学 | 基于SiGeSn-GeSn材料的II型异质结隧穿场效应晶体管 |
CN105140286A (zh) * | 2015-08-11 | 2015-12-09 | 西安电子科技大学 | 基于GaAsN-GaAsSb材料的II型异质结隧穿场效应晶体管 |
CN105161528A (zh) * | 2015-08-11 | 2015-12-16 | 西安电子科技大学 | 基于GeSn-SiGeSn材料的II型异质结隧穿场效应晶体管 |
CN109597221A (zh) * | 2018-10-30 | 2019-04-09 | 华中科技大学 | 一种偏振无关的多量子阱电吸收红外光通信光调制器 |
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CN103311306A (zh) * | 2013-06-26 | 2013-09-18 | 重庆大学 | 带有InAlP盖层的GeSn沟道金属氧化物半导体场效应晶体管 |
US20130295739A1 (en) * | 2012-05-01 | 2013-11-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device |
CN103594496A (zh) * | 2012-08-16 | 2014-02-19 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
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US20130295739A1 (en) * | 2012-05-01 | 2013-11-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device |
CN103594496A (zh) * | 2012-08-16 | 2014-02-19 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN103311306A (zh) * | 2013-06-26 | 2013-09-18 | 重庆大学 | 带有InAlP盖层的GeSn沟道金属氧化物半导体场效应晶体管 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105070755A (zh) * | 2015-08-11 | 2015-11-18 | 西安电子科技大学 | 基于SiGeSn-GeSn材料的II型异质结隧穿场效应晶体管 |
CN105140286A (zh) * | 2015-08-11 | 2015-12-09 | 西安电子科技大学 | 基于GaAsN-GaAsSb材料的II型异质结隧穿场效应晶体管 |
CN105161528A (zh) * | 2015-08-11 | 2015-12-16 | 西安电子科技大学 | 基于GeSn-SiGeSn材料的II型异质结隧穿场效应晶体管 |
CN105140286B (zh) * | 2015-08-11 | 2018-04-17 | 西安电子科技大学 | 基于GaAsN‑GaAsSb 材料的II型异质结隧穿场效应晶体管 |
CN109597221A (zh) * | 2018-10-30 | 2019-04-09 | 华中科技大学 | 一种偏振无关的多量子阱电吸收红外光通信光调制器 |
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