CN103824871A - Organic light-emitting display system and method of manufacturing the same - Google Patents

Organic light-emitting display system and method of manufacturing the same Download PDF

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Publication number
CN103824871A
CN103824871A CN201310181331.5A CN201310181331A CN103824871A CN 103824871 A CN103824871 A CN 103824871A CN 201310181331 A CN201310181331 A CN 201310181331A CN 103824871 A CN103824871 A CN 103824871A
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inoranic membrane
light emitting
organic light
emitting display
electrode
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CN103824871B (en
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李政烈
赵尹衡
韩旭
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Samsung Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Abstract

An organic light-emitting display system and a method of manufacturing the same are disclosed. In one aspect, the organic light-emitting display system includes a substrate, a display unit that defines an active area on the substrate and includes a plurality of thin film transistor (TFTs), and an encapsulation layer that seals the display unit and has a stacked structure in which at least a first inorganic film, a first organic film, and a second inorganic film are sequentially stacked. Each TFT includes an active layer, a gate electrode, a source electrode, a drain electrode, and an interlayer insulating film that is disposed between the gate electrode and the source electrode and between the gate electrode and the drain electrode, wherein the second inorganic film directly contacts the interlayer insulating film outside the active area. Accordingly, in various embodiments, since an inorganic layer of a thin film encapsulation layer is prevented from being cracked, penetration of external moisture or oxygen into the active area of the display can be reduced or prevented.

Description

Organic light emitting display system and manufacture method thereof
The application requires to be submitted on November 19th, 2012 rights and interests of the 10-2012-0131115 korean patent application of Department of Intellectual Property of Korea S, and the open of above-mentioned application is all contained in this by reference.
Technical field
Disclosed technology relates to a kind of organic light emitting display system and manufacture method thereof, more particularly, relates to organic light emitting display system and the manufacture method thereof of a kind of enhancing around the sealing force of the thin film encapsulation layer of the luminous component of display system.
Background technology
Organic light emitting display system comprises organic light emitting apparatus or diode (OLED), this OLED comprise hole injecting electrode, electron injection electrode and be formed on hole injecting electrode and electron injection electrode between organic luminous layer.Such display system is radiative spontaneous emission system in the time that exciton drops to ground state from excitation state, wherein, and when produce described exciton from hole injecting electrode injected holes with in the time that electron injection electrode injected electrons is bonded to each other organic luminous layer.
Because OLED display system does not need independent light source, so OLED display system can be worked and have frivolous design under low-voltage.This display system of new generation has the attendant advantages such as wide visual angle, high-contrast and quick response.But, because organic system material is subject to the impact of outside moisture or oxygen and is deteriorated, so light-emitting zone must be sealed effectively.
In order to make OLED display system lightweight and/or soft, attempt to develop a kind of comprising by laying inoranic membrane or laying organic film and the thin film encapsulation member of the stack of multiple layers that inoranic membrane forms recently.
Because inoranic membrane will have larger thickness conventionally, so compared with organic film, inoranic membrane can prevent the infiltration of outside moisture or oxygen more effectively.But, because the thickness of inoranic membrane increases, thus stress also increase, thereby inoranic membrane is peeled off.Once it is damaged or remove to seal member, the life-span of display system is just shortened.
Summary of the invention
The invention provides a kind of organic light emitting display system and a kind of method of manufacturing this organic light emitting display system of the sealing force that can improve thin film encapsulation layer.
According to an aspect of the present invention, provide a kind of organic light emitting display system, described organic light emitting display system comprises: substrate; Display unit, determines active area and comprises multiple thin-film transistors (TFT) at ceiling substrate; Encapsulated layer, seal display unit and there is at least sequentially stacking stacked structure that has the first inoranic membrane, the first organic film and the second inoranic membrane in it, wherein, TFT comprise active layer, gate electrode, source electrode, drain electrode and be arranged on gate electrode and source electrode between and interlayer dielectric between gate electrode and drain electrode, wherein, the second inoranic membrane is directly contacting interlayer dielectric at the some place of outside, active area substantially.
The second inoranic membrane and interlayer dielectric can be formed by identical material.
Described material is silicon nitride (SiN x).
Display unit can also comprise organic light emitting apparatus (OLED), and wherein, OLED comprises: pixel electrode, is connected to any one in source electrode and drain electrode; Intermediate layer, is formed on pixel electrode and comprises organic luminous layer; To electrode, be formed on intermediate layer, wherein, the first inoranic membrane is formed on electrode.
Organic light emitting display system can also comprise the protective layer being formed between electrode and the first inoranic membrane.
Protective layer can comprise and covering the cover layer of electrode and be formed on supratectal screen, and wherein, screen is formed by the lithium fluoride (LiF) with pinhole arrangement.
The first inoranic membrane can be by aluminium oxide (AlO x) form.
Encapsulated layer can also comprise the second organic film of being formed on the second inoranic membrane and be formed on the 3rd inoranic membrane on the second organic film, and wherein, the 3rd inoranic membrane is contacting the top surface of the second inoranic membrane substantially at the some place of outside, active area.
The second inoranic membrane and the 3rd inoranic membrane can be formed by identical material.
Each area coverage in the second inoranic membrane and the 3rd inoranic membrane is larger than the area coverage of the first inoranic membrane.
According to a further aspect in the invention, provide a kind of organic light emitting display system, described organic light emitting display system comprises: substrate; Display unit, determines active area at ceiling substrate, and comprises that multiple thin-film transistors (TFT) and multiple organic light emitting apparatus (OLED) make corresponding TFT be electrically connected to corresponding OLED; Encapsulated layer, sealing display unit, and there is at least sequentially stacking stacked structure that has the first inoranic membrane, the first organic film and the second inoranic membrane in it; Protective layer; be formed between encapsulated layer and display unit; wherein; TFT comprises the interlayer dielectric that extends to the basic point in outside, active area; wherein; the area coverage of the second inoranic membrane is larger than the each area coverage in the first inoranic membrane and the first organic film, and the second inoranic membrane is contacting the top surface of interlayer dielectric substantially at the some place of outside, active area.
Interlayer dielectric and the second inoranic membrane are formed by identical material.
Protective layer comprises and covering the cover layer of electrode and be formed on supratectal screen, and wherein, the first inoranic membrane is around protective layer.
The area coverage of the first inoranic membrane is larger than the area coverage of the first organic film.
Screen is formed by the lithium fluoride (LiF) with pinhole arrangement, and the first inoranic membrane is by aluminium oxide (AlO x) form.
Encapsulated layer also comprises the second organic film of being formed on the second inoranic membrane and is formed on the 3rd inoranic membrane on the second organic film, and wherein, the 3rd inoranic membrane is at the top surface of active area external contact the second inoranic membrane.
The second inoranic membrane and the 3rd inoranic membrane are formed by identical material.
Described material is silicon nitride (SiN x).
TFT also comprises active layer, gate electrode, source electrode and drain electrode, and wherein, interlayer dielectric is arranged between gate electrode and source electrode and between gate electrode and drain electrode.
Organic light emitting apparatus comprises: pixel electrode, is connected to TFT; Intermediate layer, is arranged on pixel electrode and comprises organic luminous layer; To electrode, be formed on intermediate layer, wherein, screen covers electrode.
According to a further aspect in the invention, provide a kind of method of manufacturing organic light emitting display system, described method comprises: on substrate, form the display unit that is limited with source region; On display unit, form protective layer; On protective layer, form the first inoranic membrane; On the first inoranic membrane, form the first organic film; Form the second inoranic membrane to cover the first inoranic membrane and the first organic film, wherein, display unit comprises the interlayer dielectric that extends to the basic point in outside, active area, and the second inoranic membrane is at the top surface of active area external contact interlayer dielectric.
Form the step of protective layer and be included in and on display unit, form cover layer and on cover layer, form screen, wherein, screen is formed by the lithium fluoride (LiF) with pinhole arrangement.
The first inoranic membrane forms by use sputter, and by aluminium oxide (AlO x) form.
Described method also comprises: on the second inoranic membrane, form the second organic film; On the second organic film, form the 3rd inoranic membrane, wherein, by using chemical vapor deposition (CVD) to form the second inoranic membrane and the 3rd inoranic membrane.
The 3rd inoranic membrane is at the top surface of external contact second inoranic membrane of active area, and the 3rd inoranic membrane and the second inoranic membrane can be formed by identical material.
Interlayer dielectric and the second inoranic membrane are formed by identical material.
A kind of organic light emitting display system comprises: substrate; Display unit, is formed on substrate, comprises the center pixel part with multiple pixels, and each pixel comprises thin-film transistor (TFT) and Organic Light Emitting Diode (OLED); Encapsulated layer, seal display unit and there is at least sequentially stacking stacked structure that has the first inoranic membrane, the first organic film and the second inoranic membrane in it, wherein, TFT comprises non-conductive layer, wherein, the second inoranic membrane extends to outside pixel portion and contact non-conductive layer in the periphery of display unit.
Non-conductive layer is inorganic interlayer dielectric.
Accompanying drawing explanation
By the detailed description of the exemplary embodiment to disclosed technology with reference to accompanying drawing, the above-mentioned and further feature of disclosed technology and advantage will become more obvious, wherein:
Fig. 1 is the plane graph illustrating according to the organic light emitting display system of the embodiment of disclosed technology;
Fig. 2 is the cutaway view intercepting along the I-I ' line of Fig. 1;
Fig. 3 is the cutaway view intercepting along the II-II ' line of Fig. 1;
Fig. 4 is the enlarged drawing that the P part of Fig. 3 is shown; And
Fig. 5 to Fig. 7 is for explaining according to the cutaway view of the manufacture method of the organic light emitting display system of Fig. 1 of the embodiment of disclosed technology.
Embodiment
As used herein, term "and/or" comprises one or more relevant combination in any and all combinations of lising.When be positioned at after a series of elements such as the expression of " ... at least one (kind) ", modify the element of whole series rather than modify the discrete component in described series.
Therefore, although exemplary embodiment can have various modifications and selectable form, show by way of example in the accompanying drawings the embodiment of exemplary embodiment, and here by the embodiment of detailed description exemplary embodiment.It should be understood, however, that and be not intended exemplary embodiment to be confined to disclosed concrete form, but contrary, covering is fallen into all modifications, equivalent and the alternative in the scope of the invention by exemplary embodiment.In the time that description is of the present invention, omit about the detailed description that may make the ambiguous related known function of main points of the present invention or structure.
Although will be appreciated that term " first ", " second " etc. can be used for describing various elements here, these elements should not be subject to the restriction of these terms.These terms are only used for an element and the difference of another element to come.
Will be appreciated that when element or layer be known as " being formed on " another element or layer " on " time, this element can directly or indirectly be formed on described another element or layer., for example, can there is intermediary element or intermediate layer.
Now with reference to accompanying drawing, the present invention is described more fully, shown in the drawings of exemplary embodiment of the present invention.In accompanying drawing, same label represents same element, therefore by the explanation not providing its repetition.In the accompanying drawings, for clarity, amplified the thickness in layer and region.In the accompanying drawings, for the ease of explaining, exaggerated the thickness in some layer and region.
Fig. 1 is the plane graph illustrating according to the organic light emitting display system 10 of embodiment.Fig. 2 is the cutaway view intercepting along the I-I ' line of Fig. 1.Fig. 3 is the cutaway view intercepting along the II-II ' line of Fig. 1.Fig. 4 is the enlarged drawing that the P part of Fig. 3 is shown.
Referring to figs. 1 through Fig. 4, organic light emitting display system 10 comprises substrate 101, on substrate 101, limits the display unit 200 of active area AA and the encapsulated layer 300 of sealing display unit 200.
Substrate 101 can be rigidity or flexible, and can be by forming such as the plastics with high thermal resistance and high durability of polyimides, polyethylene terephthalate (PET), Merlon, Polyethylene Naphthalate, polyarylate (PAR) and Polyetherimide.But the present embodiment is not limited to this, substrate 101 can be formed by any other the various materials such as metal and glass.
Display unit 200 limits active area AA and comprises multiple pixels on substrate 101, and in multiple pixels, each pixel has the thin-film transistor (TFT) and the organic light emitting apparatus (OLED) that are electrically connected to each other.Pad cell 1 is arranged on around the AA of active area conventionally, and the signal of telecommunication is transferred to active area AA from electric supply installation (not shown) or signal generation device (not shown).Although accompanying drawing below will explain about the single TFT of independent pixel and the various embodiment of OLED, various equivalent modifications will be appreciated that utilizes below the matrix that the layer of explaining and film while is formed in active area to pixel.It will also be understood that, commercial product will adopt the some sub-pixels such as red, green and blue different colours to form complete pixel typically, but such usage details is known, will not further consider here.In addition, for example, also unshowned is for supplementing TFT and OLED to form any support circuit of pixel or the demand motive data circuit to pixel.
Explain in more detail the display unit 200 about pixel with reference to Fig. 3.
In this embodiment, resilient coating 201 is formed on substrate 101.Resilient coating 201 is formed on the whole surface of substrate 101, that is, resilient coating 201 is formed on active area AA above and is formed on around the AA of active area.Resilient coating 201 is used for preventing that impurity from infiltrating in substrate 101 and making substrate 101 planarizations.According to design needs, resilient coating 201 can be formed by any various materials.
For example, resilient coating 201 can comprise such as the inorganic material of silica, silicon nitride, silicon oxynitride, aluminium oxide, aluminium nitride, titanium oxide or titanium nitride or such as the organic material of polyimides, polyester or acryl (acryl), and can have the stacking stacked structure that has two or more materials.
With reference to Fig. 3, TFT is formed on resilient coating 201 and comprises active layer 202, gate electrode 204, source electrode 206 and drain electrode 207.
Active layer 202 can be formed by the inorganic semiconductor such as amorphous silicon or polysilicon, organic semiconductor or oxide semiconductor, and comprises source region, drain region and channel region.
Gate insulating film 203 is formed on active layer 202.Gate insulating film 203 is formed as the whole surface corresponding to substrate 101., gate insulating film 203 is formed on the upper and active area AA that is formed on substrate 101 of the active area AA of substrate 101 around.Can be by organic material or such as SiN for the gate insulating film 203 that active layer 202 and gate electrode 204 are insulated xor SiO 2inorganic material form.
Gate electrode 204 is formed on gate insulating film 203.Gate electrode 204 can by gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminium (Al) or molybdenum (Mo) forms or by forming such as the alloy of Al:Nd or Mo:W, but embodiment is not limited to this and considers design restriction, and gate electrode 204 can be formed by any other various materials.
Interlayer dielectric 205 is formed on gate electrode 204.Interlayer dielectric 205 is formed as the whole surface corresponding to substrate 101 conventionally., interlayer dielectric 205 is formed on active area AA above and is formed on active area AA around.
Be arranged between gate electrode 204 and source electrode 206 and between gate electrode 204 and drain electrode 207 and make the interlayer dielectric 205 of the each insulation in gate electrode 204 and source electrode 206 and drain electrode 207 can be by such as SiN xor SiO 2inorganic material form.Interlayer dielectric 205 can be by SiN xform, or can there is the SiN of comprising xlayer and SiO 2the double-decker of layer.In the time that interlayer dielectric 205 has double-decker, in order to improve the bonding force between interlayer dielectric 205 and encapsulated layer, preferably make upper strata be formed as SiN xlayer.
Source electrode 206 and drain electrode 207 are formed on interlayer dielectric 205.In addition, interlayer dielectric 205 and gate insulating film 203 are formed as exposing source region and the drain region of active layer 202, and source electrode 206 is formed as contacting the source region being exposed of active layer 202 and the drain region being exposed with drain electrode 207.
Although the TFT of reference is shown as the top grid TFT of sequentially stacking active layer 202, gate electrode 204 and source electrode 206 and drain electrode 207 in it, embodiment is not limited to this and gate electrode 204 can be arranged on active layer 202 belows.
TFT carrys out driving OLED and protected by being passivated layer 208 covering by being electrically connected to OLED.
Disclosed passivation layer 208 comprises inorganic insulating membrane and/or organic insulating film.Inorganic insulating membrane can be by SiO 2, SiN x, SiON, Al 2o 3, TiO 2, Ta 2o 5, HfO 2, ZrO 2, BST or PZT form, organic insulating film can be by forming such as polymethyl methacrylate (PMMA) or the general polymer of polystyrene (PS), the polymer derivant with phenolic group, acryloyl base polymer, acid imide polymer, aryl oxide base polymer, acylamide polymer, fluorine-based polymer, paraxylene base polymer, vinyl alcohol polymer or their mixture.In addition, disclosed passivation layer 208 has the stacked structure that comprises inorganic insulating membrane and organic insulating film.
Conventionally be formed on passivation layer 208 and comprise pixel electrode 211, intermediate layer 214 and to electrode 215 such as the light-emitting device of OLED.
Pixel electrode 211 is formed on passivation layer 208.In addition, passivation layer 208 can be formed as exposing the predetermined portions of drain electrode and the whole surface that do not cover drain electrode 207, and pixel electrode 211 can be formed as being connected to the expose portion of drain electrode 207.
Pixel electrode 211 can be reflecting electrode, and can comprise the reflectance coating being formed by silver (Ag), magnesium (Mg), aluminium (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or their mixture and be formed on the transparent or semitransparent electrode layer on reflectance coating.Transparent or semitransparent electrode layer can comprise from by tin indium oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2o 3), the group selection of indium oxide gallium (IGO) and aluminum zinc oxide (AZO) composition at least one.
What face pixel electrode 211 can be transparent or semitransparent electrode to electrode 215, and can comprise the metallic film with low work function being formed by lithium (Li), calcium (Ca), lithium fluoride (LiF)/Ca, LiF/Al, Al, Ag, Mg or their mixture.In addition, by such as ITO, IZO, ZnO or In 2o 3transparency electrode form material form auxiliary electrode layer or bus electrode can also be formed on metallic film.
Therefore, to electrode 215, the light transmission from being included in the organic luminous layer transmitting intermediate layer 214 is passed., will directly be transmitted to electrode 215 from the light of organic luminous layer transmitting, or the pixel electrode 211 that is included reflecting electrode is reflected and is then transmitted to electrode 215.
But organic light emitting display system 10 is not limited to top-emission organic light emitting display system, and can be bottom emission organic light emitting display system, in bottom emission organic light emitting display system, be transmitted to substrate 101 from the light of organic luminous layer transmitting.In this case, pixel electrode 211 can be transparent or semitransparent electrode, can be reflecting electrode to electrode 215.In addition, organic light emitting display system 10 can be that light is transmitted to the two dual emission organic light emitting display system of top surface and basal surface.
The pixel being formed by insulating material limits film 213 and is formed on pixel electrode 211.Pixel limits film 213 and is processed into the predetermined portions that exposes pixel electrode 211, comprises that the intermediate layer 214 of organic luminous layer is formed on the expose portion of pixel electrode 211.
Organic luminous layer can be formed by low-molecular-weight organic material or high molecular weight organic materials.Except organic luminous layer, intermediate layer 214 can also optionally comprise the functional layer such as hole transmission layer (HTL), hole injection layer (HIL), electron transfer layer (ETL) or electron injecting layer (EIL).
Encapsulated layer 300 is formed on electrode 215.In the embodiment describing, encapsulated layer 300 at least comprises the first inoranic membrane 301, the first organic film 302 and the second inoranic membrane 303.In addition, as shown in Figure 4, protective layer 220 can also be formed between encapsulated layer 300 and display unit 200.
Protective layer 220 can comprise and covers the cover layer 222 to electrode 215 and be arranged on the screen (shield layer) 224 on cover layer 222.
Cover layer 222 can be by such as a-NPD, NPB, TPD, m-MTDATA, Alq 3or the organic material of CuPc forms.Cover layer 222 is for strengthening light transmission and protection OLED.
Screen 224 can be by such as LiF, MgF 2or CaF 2inorganic material form.Screen 224 is for preventing forming the plasma penetration that uses when the first inoranic membrane 301 to OLED and prevent described plasma damage intermediate layer 214 and to electrode 215.Screen 224 can be formed by the LiF with pinhole arrangement.
The first inoranic membrane 301 is formed on protective layer 220.The first inoranic membrane 301 can be by for example aluminium oxide (AlO x) form.The first inoranic membrane 301 can be by using sputter to be formed as approximately
Figure BDA00003199777800081
thickness.Be deposited on the first inoranic membrane 301 on screen 224 according to the crystalline structure growth of screen 224., meticulous crackle is present on the whole surface that is formed on the first inoranic membrane 301 on screen 224.
The first organic film 302 being formed on the first inoranic membrane 301 can comprise HMW organic compound.In HMW organic compound, can discharge the outgas phenomenon (outgassing) of gas.Gas can penetrate in OLED.In this case, in the time that particle etc. breaks the first inoranic membrane 301, the gas producing in organic compound can concentrate on crackle, thereby makes OLED electrode 215 is oxidized and causes beyond thought blackening.
But, according to various embodiment, because meticulous crackle is present on the whole surface of the first inoranic membrane 301, so even when gas discharges from the first organic film 302, gas is not concentrated on a single point yet.That is because in the first organic film 302 produce gas be present in whole lip-deep meticulous crackle by (fifty-fifty) and distributed widely, so to electrode 215 generally by not oxidized, thereby blackening can be minimized or avoid.
The first organic film 302 can be formed on the first inoranic membrane 301 to have predetermined thickness, for example, and approximately
Figure BDA00003199777800091
thickness so that owing to comprising that forming pixel limits the OLED of film 213 and process step part (seeing the OLED mark in Fig. 3) planarization forming.The first organic film 302 can be by any formation the in epoxy resin, acrylic resin and urethane acrylate.Conventionally, the overlay area of the first organic film 302 is by less than the overlay area of the first inoranic membrane 301.
The second inoranic membrane 303 is formed as around the first inoranic membrane 301 and the first organic film 302.That is because the whole surface of the first organic film 302 by the first inoranic membrane 301 and the second inoranic membrane 303 around, so can effectively prevent that outside moisture or oxygen from penetrating in the active area of display unit.
The second inoranic membrane 303 can be by for example SiN xform, and can be by using chemical vapor deposition (CVD) to be formed as approximately thickness.Therefore,, even in the time that particle is present on the first organic film 302, also the part of the rising forming due to the particle of introducing will be covered in process for making.In addition, because the second inoranic membrane 303 does not use the CVD of plasma to form by utilizing, so the first organic film 302 will be not damaged in the time forming the second inoranic membrane 303, thereby will prevent outgas phenomenon.
The second inoranic membrane 303 is formed as covering than the first large region of inoranic membrane 301, and is substantially directly contacting interlayer dielectric 205 at the some place of AA outside, active area.In addition, the second inoranic membrane 303 can be formed by the material identical with the material of interlayer dielectric 205., because the second inoranic membrane 303 by SiN xform, and interlayer dielectric 205 is by SiN xform or in the time that interlayer dielectric 205 has double-decker, upper strata is SiN xlayer, so by the bonding force strengthening between the second inoranic membrane 303 and interlayer dielectric 205.Therefore, in various embodiments, because the second inoranic membrane 303 is formed as being enough to cover the thickness of less desirable particle matter, so even if the stress on film is while increasing, also prevent to a great extent that the second inoranic membrane 303 from peeling off, thereby reduce or avoid harmful outside moisture or the infiltration of oxygen.
The second organic film 304 and the 3rd inoranic membrane 305 can be formed on the second inoranic membrane 303.Although not shown in Fig. 1 to Fig. 4, in other embodiments, by AlO xthe 4th inoranic membrane (not shown) forming can also be formed on the outer surface of encapsulated layer 300.
The second organic film 304 can be by any formation the in epoxy resin, acrylic resin and urethane acrylate, and can be formed as approximately thickness.And if the second organic film 304 has the words of particle to make particle planarization for reducing to the stress of the first inoranic membrane 301.
The 3rd inoranic membrane 305 covers the second organic film 304.The 3rd inoranic membrane 305 has approximately
Figure BDA00003199777800101
thickness, and at the top surface that substantially contacts the second inoranic membrane 303 at the some place of AA outside, active area.
The 3rd inoranic membrane 305 can be formed by the material identical with the material of the second inoranic membrane 303.For example, the 3rd inoranic membrane 305 can be by SiN xform.Therefore, the bonding force between the 3rd inoranic membrane 305 and the second inoranic membrane 303 will increase, thereby further effectively prevent the infiltration of outside moisture or oxygen.
Encapsulated layer 300 can also comprise and replace stacking multiple additional inoranic membrane and organic film, and stacking inoranic membrane and the quantity of organic film are unrestricted.
In addition, diaphragm (not shown) is attached to the top surface of encapsulated layer 300.In the time that diaphragm has strong adhesive power, in the time removing diaphragm, encapsulated layer 300 can peel off equally.In order to address this problem, can further form with diaphragm have weak bonding force by AlO xthe 4th inoranic membrane (not shown) forming.
Fig. 5 to Fig. 7 is the cutaway view for the manufacture method of the organic light emitting display system 10 of key-drawing 1.Display unit 200 is identical with the display unit of describing with reference to Fig. 3, and therefore the partial results of display unit 200 is not shown in Fig. 5 to Fig. 7.
Come together to explain the manufacture method of organic light emitting display system 10 with reference to Fig. 5 to Fig. 7 and Fig. 4.
With reference to Fig. 5, on substrate 101, form the display unit 200 that is limited with source region AA.Because display unit 200 can comprise dot structure as shown in Figure 3 and can be made up of any various known organic light emitting display designs, so will not explain the method for manufacturing display unit 200.Display unit 200 comprises the resilient coating 201, gate insulating film 203 and the interlayer dielectric 205 that extend to the basic position in AA outside, active area.Be arranged on gate electrode 204(and see Fig. 3) and source electrode 206(see Fig. 3) between and gate electrode 204(see Fig. 3) and drain electrode 207(see Fig. 3) between and make the interlayer dielectric 205 of the each insulation in gate electrode 204 and source electrode 206 and drain electrode 207 can be by such as SiN xor SiO 2inorganic material form.Interlayer dielectric 205 can be by SiN xform, or can be formed as having the SiN of comprising xlayer and SiO 2the double-decker of layer.In the time that interlayer dielectric 205 has double-decker, upper strata can be SiN xlayer, to improve the bonding force between interlayer dielectric 205 and the second inoranic membrane 303.
With reference to Fig. 6, on display unit 200, form protective layer 220 and the first inoranic membrane 301.
Protective layer 220 comprises by such as a-NPD, NPB, TPD, m-MTDATA, Alq 3or the cover layer 222 of the organic material of CuPc formation and the screen 224 being formed by LiF.The first inoranic membrane 301 can be by AlO xform.In addition, can utilize sputter that the first inoranic membrane 301 is formed as approximately
Figure BDA00003199777800102
thickness.
Because lithium fluoride (LiF) has pinhole arrangement and is deposited on the first inoranic membrane 301 on screen 224 according to the crystalline structure growth of screen 224, so meticulous crackle is present on the whole surface of the first inoranic membrane 301.Therefore, even see Fig. 7 as the first organic film 302(forming on the first inoranic membrane 301) in generation when gas, gas is also extensively distributed the whole lip-deep meticulous crackle being present on the first inoranic membrane 301 by (fifty-fifty) generally.Therefore, can prevent oxidized to electrode 215 and can avoid blackening.
With reference to Fig. 7, sequentially form the first organic film 302, the second inoranic membrane 303, the second organic film 304 and the 3rd inoranic membrane 305.
The first organic film 302 can be formed as enough large so that see Fig. 3 because pixel limits film 213() the predetermined thickness of the step part planarization that forms, for example, about
Figure BDA00003199777800111
thickness.The first organic film 302 can be by any formation the in epoxy resin, acrylic resin and urethane acrylate.In order to make the overlay area of the first organic film 302 less than the overlay area of the first inoranic membrane 301, can form the first organic film 302 with the mask with smaller opening.
Form the second inoranic membrane 303 with around the first inoranic membrane 301 and the first organic film 302.That is because the whole surface of the first organic film 302 by the first inoranic membrane 301 and the second inoranic membrane 303 around, so will reduce or prevent the infiltration of outside moisture or oxygen.
The second inoranic membrane 303 can be by for example SiN xform, and can be by using CVD to be formed as approximately
Figure BDA00003199777800112
thickness.Therefore,, even in the time that particle is present on the first organic film 302, the rising part forming due to particle also will be capped.In addition, because by using the not CVD of using plasma to form the second inoranic membrane 303, thus in the time forming the second inoranic membrane 303, can prevent that the first organic film 302 is damaged, thus prevent from producing the outgas phenomenon of gas in the first organic film 302.
The area that the second inoranic membrane 303 is formed Area Ratio the first inoranic membrane 301 is large, and is substantially directly contacting interlayer dielectric 205 at the some place of AA outside, active area.In addition, the second inoranic membrane 303 can be formed by the material identical with the material of interlayer dielectric 205.For example, because the second inoranic membrane 303 by SiN xform, interlayer dielectric 205 is by SiN xform or in the time that interlayer dielectric 205 has double-decker, upper strata is SiN xlayer, so can improve the bonding force between the second inoranic membrane 303 and interlayer dielectric 205.Therefore, because the second inoranic membrane 303 is formed the thickness that is enough to cover less desirable particle matter, so even when the stress of film is increased, also can prevent that the second inoranic membrane 303 from peeling off, thereby will reduce or prevent the infiltration of outside moisture or oxygen.
The second organic film 304 can comprise any in epoxy resin, acrylic resin and urethane acrylate, and can be formed as approximately thickness.And if the stress that the second organic film 304 reduces on the first inoranic membrane 301 has the words of particle to make particle planarization.
The 3rd inoranic membrane 305 covers the second organic film 304.The 3rd inoranic membrane 305 can have approximately
Figure BDA00003199777800121
thickness, and can by use CVD form, thereby prevent the damage to the second organic film 304.
In addition, the 3rd inoranic membrane 305 can be at the top surface of the external contact of active area AA the second inoranic membrane 303, and the 3rd inoranic membrane 305 can be formed by the material identical with the material of the second inoranic membrane 303.For example, the 3rd inoranic membrane 305 can be by SiN xform.Therefore, the bonding force between the 3rd inoranic membrane 305 and the second inoranic membrane 303 will be increased, thereby effectively prevent the infiltration of outside moisture or oxygen.
Encapsulated layer 300 can also comprise and replaces stacking multiple additional inoranic membrane and organic film.Stacking inoranic membrane and the quantity of organic film are unrestricted.
Flexible display systems is not limited to disclosed structure and the method for embodiment, can carry out revision for execution example by whole or some elements that optionally combine in other embodiment.
Although illustrate particularly and described inventive concept with reference to the exemplary embodiment of inventive concept, but provide exemplary embodiment for illustrative object, and those of ordinary skill in the art will be appreciated that other embodiment that design can be made various modifications and be equal to according to the present invention.Therefore, the real technical scope of inventive concept is limited by the technical spirit of claim.

Claims (28)

1. an organic light emitting display system, described organic light emitting display system comprises:
Substrate;
Display unit, determines active area and comprises multiple thin-film transistors at ceiling substrate; And
Encapsulated layer, sealing display unit, and there is at least sequentially stacking stacked structure that has the first inoranic membrane, the first organic film and the second inoranic membrane,
Wherein, thin-film transistor comprise active layer, gate electrode, source electrode, drain electrode and be arranged on gate electrode and source electrode between and interlayer dielectric between gate electrode and drain electrode,
Wherein, the second inoranic membrane is directly contacting interlayer dielectric at the some place of outside, active area substantially.
2. organic light emitting display system according to claim 1, wherein, the second inoranic membrane and interlayer dielectric are formed by identical material.
3. organic light emitting display system according to claim 2, wherein, described material is silicon nitride.
4. organic light emitting display system according to claim 1, wherein, display unit also comprises organic light emitting apparatus,
Wherein, organic light emitting apparatus comprises:
Pixel electrode, is connected to any one in source electrode and drain electrode;
Intermediate layer, is formed on pixel electrode and comprises organic luminous layer; And
To electrode, be formed on intermediate layer,
Wherein, the first inoranic membrane is formed on electrode.
5. organic light emitting display system according to claim 4, described organic light emitting display system also comprises the protective layer being formed between electrode and the first inoranic membrane.
6. organic light emitting display system according to claim 5,
Wherein, protective layer comprises and covers the cover layer of electrode and be formed on supratectal screen,
Wherein, screen is formed by the lithium fluoride with pinhole arrangement.
7. organic light emitting display system according to claim 6, wherein, the first inoranic membrane is formed by aluminium oxide.
8. organic light emitting display system according to claim 1,
Wherein, encapsulated layer also comprises the second organic film of being formed on the second inoranic membrane and is formed on the 3rd inoranic membrane on the second organic film,
Wherein, the 3rd inoranic membrane is contacting the top surface of the second inoranic membrane substantially at the some place of outside, active area.
9. organic light emitting display system according to claim 8, wherein, the second inoranic membrane and the 3rd inoranic membrane are formed by identical material.
10. organic light emitting display system according to claim 8, wherein, the each overlay area in the second inoranic membrane and the 3rd inoranic membrane is larger than the overlay area of the first inoranic membrane.
11. 1 kinds of organic light emitting display systems, described organic light emitting display system comprises:
Substrate;
Display unit, determines active area at ceiling substrate, and comprises that multiple thin-film transistors and multiple organic light emitting apparatus make corresponding thin-film transistor be electrically connected to corresponding organic light emitting apparatus;
Encapsulated layer, sealing display unit, and there is at least sequentially stacking stacked structure that has the first inoranic membrane, the first organic film and the second inoranic membrane; And
Protective layer, is formed between encapsulated layer and display unit,
Wherein, thin-film transistor comprises the interlayer dielectric that extends to the basic point in outside, active area,
Wherein, the overlay area of the second inoranic membrane is larger than the each overlay area in the first inoranic membrane and the first organic film, and the second inoranic membrane is contacting the top surface of interlayer dielectric substantially at the some place of outside, active area.
12. organic light emitting display systems according to claim 11, wherein, interlayer dielectric and the second inoranic membrane are formed by identical material.
13. organic light emitting display systems according to claim 11,
Wherein, protective layer comprises and covers the cover layer of electrode and be formed on supratectal screen,
Wherein, the first inoranic membrane is around protective layer.
14. organic light emitting display systems according to claim 11, wherein, the overlay area of the first inoranic membrane is larger than the overlay area of the first organic film.
15. organic light emitting display systems according to claim 13, wherein, screen is formed by the lithium fluoride with pinhole arrangement, and the first inoranic membrane is formed by aluminium oxide.
16. organic light emitting display systems according to claim 11,
Wherein, encapsulated layer also comprises the second organic film of being formed on the second inoranic membrane and is formed on the 3rd inoranic membrane on the second organic film,
Wherein, the 3rd inoranic membrane is at the top surface of active area external contact the second inoranic membrane.
17. organic light emitting display systems according to claim 16, wherein, the second inoranic membrane and the 3rd inoranic membrane are formed by identical material.
18. organic light emitting display systems according to claim 17, wherein, described material is silicon nitride.
19. organic light emitting display systems according to claim 11,
Wherein, thin-film transistor also comprises active layer, gate electrode, source electrode and drain electrode,
Wherein, interlayer dielectric is arranged between gate electrode and source electrode and between gate electrode and drain electrode.
20. organic light emitting display systems according to claim 11,
Wherein, organic light emitting apparatus comprises: pixel electrode, is connected to thin-film transistor; Intermediate layer, is arranged on pixel electrode and comprises organic luminous layer; To electrode, be formed on intermediate layer,
Wherein, screen covers electrode.
Manufacture the method for organic light emitting display system for 21. 1 kinds, described method comprises:
On substrate, form the display unit that is limited with source region;
On display unit, form protective layer;
On protective layer, form the first inoranic membrane;
On the first inoranic membrane, form the first organic film; And
Form the second inoranic membrane to cover the first inoranic membrane and the first organic film,
Wherein, display unit comprises the interlayer dielectric that extends to the basic point in outside, active area, and the second inoranic membrane is at the top surface of active area external contact interlayer dielectric.
22. methods according to claim 21,
Wherein, form the step of protective layer and be included in and on display unit, form cover layer and on cover layer, form screen,
Wherein, screen is formed by the lithium fluoride with pinhole arrangement.
23. methods according to claim 22, wherein, the first inoranic membrane forms by use sputter, and is formed by aluminium oxide.
24. methods according to claim 21, described method also comprises:
On the second inoranic membrane, form the second organic film; And
On the second organic film, form the 3rd inoranic membrane,
Wherein, by using chemical vapour deposition (CVD) to form the second inoranic membrane and the 3rd inoranic membrane.
25. methods according to claim 24, wherein, the 3rd inoranic membrane is at the top surface of external contact second inoranic membrane of active area, and the 3rd inoranic membrane and the second inoranic membrane are formed by identical material.
26. methods according to claim 24, wherein, interlayer dielectric and the second inoranic membrane are formed by identical material.
27. 1 kinds of organic light emitting display systems, described organic light emitting display system comprises:
Substrate;
Display unit, is formed on substrate and comprises the center pixel part with multiple pixels, and each pixel comprises thin-film transistor and Organic Light Emitting Diode; And
Encapsulated layer, seals display unit and has at least sequentially stacking stacked structure that has the first inoranic membrane, the first organic film and the second inoranic membrane,
Wherein, thin-film transistor comprises non-conductive layer,
Wherein, the second inoranic membrane extends to outside pixel portion and at the periphery of display unit and contacts non-conductive layer.
28. organic light emitting display systems according to claim 27, wherein, non-conductive layer is inorganic interlayer dielectric.
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