CN103813622A - Circuit board and manufacturing method thereof - Google Patents
Circuit board and manufacturing method thereof Download PDFInfo
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- CN103813622A CN103813622A CN201310549679.5A CN201310549679A CN103813622A CN 103813622 A CN103813622 A CN 103813622A CN 201310549679 A CN201310549679 A CN 201310549679A CN 103813622 A CN103813622 A CN 103813622A
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- insulated substrate
- copper
- substrate
- insulation substrate
- circuit board
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Abstract
The invention discloses a circuit board and a manufacturing method thereof. The circuit board comprises a plastic insulation substrate or a ceramic insulation substrate; metal oxide nanoparticles are mixed into the plastic insulation substrate or the ceramic insulation substrate; the plastic insulation substrate or the ceramic insulation substrate comprises a copper plating layer. The manufacturing method of the circuit board sequentially comprises step 1, providing the insulation substrate and mixing the metal oxide nanoparticles into the insulation substrate; step 2, irradiating the surface of the insulation substrate through an ultraviolet laser so as to activate the metal oxide nanoparticles; step 3, performing metallic copper sputtering coating on the surface of the insulation substrate which is obtained in the step 2; step 4, performing conductive circuit printing on the surface of the insulation substrate after the copper sputtering coating.
Description
Technical field
The invention belongs to field of circuit boards, relate in particular to a kind of circuit board and on this circuit board, form the method for conducting wire by sputter.
Background technology
Circuit board is requisite circuit structure carrier in modern industry, and therefore, the function of the good and bad directly circuit structure that impact forms thereon of the performance of circuit board realizes.At present, the problem that circuit board mainly faces is that formed circuit is easily short-circuited or opens circuit, this is mainly because circuit board generally all adopts the mode of direct copper plating on insulated substrate to form, and the combination of metallic copper and insulated substrate is all made us being not too satisfied with conventionally.Due to metallic copper be combined with insulated substrate not good, easily cause form copper circuit perk, thereby the problem that causes short circuit or open circuit.In prior art, adopt several different methods to improve above-mentioned binding ability, for example method of adhesive-applying copper foil on insulated substrate, or in the method for Copper Foil upper resin.But this method need to be used a large amount of bonding agents, and bonding agent all can cause the environmental issues such as waste water and gas conventionally.
In order to improve binding ability, prior art also solves by the mode of electroless copper on insulated substrate.Although this method can further improve the bond strength of copper and insulated substrate, electroless copper needs a large amount of chemical agents equally, and this brings very adverse influence equally to environmental protection.
Summary of the invention:
The present invention proposes a kind of circuit board and form the method for conducting wire thereon.
Described circuit board has plastic insulation substrate or ceramic insulation substrate, and pick-up metal oxide nano particles in described plastic insulation substrate or ceramic insulation substrate also has copper plate on described plastic insulation substrate or ceramic insulation substrate.
The described method that forms conducting wire on circuit board is by pick-up metal oxide nano particles in insulated substrate specifically, then by Ultra-Violet Laser, this metal oxide nanoparticles is irradiated, thereby metal oxide nanoparticles is carried out to activation processing, then jet-plating metallization copper on the substrate of the mode by sputter after activation processing, finally conductive pattern is printed onto on substrate, etch away non-conductive pattern region, thereby obtain the circuit board with conductive pattern.The method proposing by the present invention can be found out, because the present invention obtains metallic atom on insulated substrate surface by Ultra-Violet Laser activated metal oxide, by the combination of metallic atom and metallic copper, thereby can strengthen the bond strength of metallic copper and substrate, and, because the conductive copper wire road on insulated substrate is to form by the mode of sputter, therefore avoided the process of electroless copper, also just remove a large amount of use chemical reagent from and carried out the technique of electroless copper, therefore this mode safer and environmental protection with respect to prior art.
The method that forms conducting wire on the circuit board that the present invention proposes, its concrete steps comprise successively:
(1) provide insulated substrate, pick-up metal oxide nano particles in insulated substrate:
(2) adopt Ultra-Violet Laser to irradiate the surface of above-mentioned insulated substrate, thus activated metal oxide nano particles;
(3) the insulated substrate surface jet-plating metallization copper obtaining in step (2);
(4) on the surface of spattering copper-plated insulated substrate, carry out conducting wire printing completing.
Wherein, between step (1) and (2), insulated substrate is cleaned, for example, by deionized water rinsing or cleaned by ultrasonic vibration, the pollutant on insulated substrate surface is cleaned, after cleaning, by clean hot blast, insulated substrate is dried to processing;
Wherein, between step (2) and (3), the insulated substrate obtaining is placed in plasm reaction cavity, by plasma, insulated substrate surface is bombarded, so that insulated substrate surface is corroded, thereby form coarse insulated substrate surface; Then, by deionized water rinsing or cleaned by ultrasonic vibration, the pollutant on insulated substrate surface is cleaned, after cleaning, by clean hot blast, insulated substrate is dried to processing;
Wherein, between step (3) and (4), spatter copper-plated insulated substrate and carry out heat treated completing, thereby further strengthen the bond strength on Copper Foil and insulated substrate surface.
Wherein, insulated substrate is plastic insulation substrate or ceramic insulation substrate; Metal oxide nanoparticles is titanium oxide, zinc oxide, aluminium oxide, tin oxide or chromium oxide nano particle, and its particle size range is 100 nanometer to 500 nanometers, and preferred scope is 200 nanometer to 350 nanometers.
Wherein, Ultra-Violet Laser is: the fluorine krypton laser that wavelength is 248nm, its irradiation energy is 180mJ/cm
2, or the wavelength xenon chlorine laser that is 308nm, its irradiation energy is 210mJ/cm
2, or the wavelength nitrogen laser that is 337nm, irradiation energy is 240mJ/cm
2;
Wherein, in step (3), the technical process of jet-plating metallization copper is: insulated substrate is placed in vacuum splashing and plating chamber, in airtight environment, vacuum splashing and plating chamber is vacuumized, when being evacuated to 5 × 10
-6after torr, pass into inert gas, make vacuum chamber remain on 5 × 10
-4under the environment of torr, start sputter copper target insulated substrate is carried out to copper facing, in the time that the copper thickness of institute's sputter is in the scope of 5-30 micron, finish sputtering process.
Embodiment:
Below by embodiment, the present invention is described in detail.
Embodiment 1
The circuit board that the present invention proposes has plastic insulation substrate or ceramic insulation substrate, and pick-up metal oxide nano particles in described plastic insulation substrate or ceramic insulation substrate, also has copper plate on described plastic insulation substrate or ceramic insulation substrate.
The method that forms conducting wire on the circuit board that the present invention proposes in turn includes the following steps:
(1) provide insulated substrate, pick-up metal oxide nano particles in insulated substrate, wherein, insulated substrate can be plastic insulation substrate, can be also ceramic insulation substrate; Metal oxide nanoparticles can be the nano particles such as titanium oxide, zinc oxide, aluminium oxide, tin oxide, chromium oxide; Or, also can adopt metal nitride nano particle to replace metal oxide nanoparticles, the such as nano particle such as aluminium nitride, titanium nitride; For the particle diameter of metal oxide nanoparticles, in the present invention, not do special restriction, but consider from economy and usefulness, the preferred particle size range of the present invention is 100 nanometer to 500 nanometers, preferred scope is 200 nanometer to 350 nanometers.
(2) adopt Ultra-Violet Laser to irradiate the surface of above-mentioned insulated substrate, thus activated metal oxide nano particles.Metal oxide nanoparticles, after Ultra-Violet Laser irradiates, will leave metallic atom on the surface of insulated substrate, and for example aluminum oxide nanoparticle is after Ultra-Violet Laser irradiates, and oxygen will disengage, and on insulated substrate, leaves aluminium atom.For other metal oxide nanoparticles, its activation process is identical with it.
(3) the insulated substrate surface jet-plating metallization copper obtaining in step (2), concrete technical process is: insulated substrate is placed in vacuum splashing and plating chamber, in airtight environment, vacuum splashing and plating chamber is vacuumized, when being evacuated to 5 × 10
-6after torr, pass into inert gas, make vacuum chamber remain on 5 × 10
-4under the environment of torr, start sputter copper target insulated substrate is carried out to copper facing, in the time that the copper thickness of institute's sputter is in the scope of 5-30 micron, finish sputtering process; In actual applications, can select different copper thicknesses for different situations, for example 15 microns, 20 microns, 25 microns.
(4) on the surface of spattering copper-plated insulated substrate, carry out conducting wire printing completing, for example adopt anti-etching thin film coated on the surface of monoblock insulated substrate, then on the surface of insulated substrate, define the region that need to form conducting wire by steps such as exposure, developments, then remove the lip-deep non-conductive region of insulated substrate by the mode of etching, thereby form the insulated substrate with conducting wire.
Further, between step (1) and (2), can look the cleaning step that concrete condition increases insulated substrate, for example by the method such as deionized water rinsing, cleaned by ultrasonic vibration, the pollutant on insulated substrate surface is cleaned, after cleaning, by clean hot blast, insulated substrate is dried to processing;
Further, between step (2) and (3), the insulated substrate obtaining can be placed in plasm reaction cavity, by plasma, insulated substrate surface is bombarded, so that insulated substrate surface is corroded, thereby form coarse insulated substrate surface.The step of taking plasma bombardment is during for next step sputter copper, further strengthens the bond strength on copper and insulated substrate surface;
Further, after insulated substrate surface being bombarded by plasma, can look the cleaning step that concrete condition increases insulated substrate, for example by the method such as deionized water rinsing, cleaned by ultrasonic vibration, the pollutant on insulated substrate surface is cleaned, after cleaning, by clean hot blast, insulated substrate is dried to processing;
Further, between step (3) and (4), can also spatter copper-plated insulated substrate and carry out heat treated completing, thereby further strengthen the bond strength on Copper Foil and insulated substrate surface, but the necessary careful selection of the temperature of heat treated, for the substrate of plastic material, its heating-up temperature should be higher than 140 degrees Celsius, for the substrate of ceramic material, its heating-up temperature should be higher than 200 degrees Celsius.
Embodiment 2
In embodiment 2, provide optimum embodiment of the present invention below:
(1) provide insulated substrate, sneak into tin oxide nano particle in insulated substrate, the particle diameter of this nano particle is 300 nanometers;
(1-1) by deionized water rinsing or cleaned by ultrasonic vibration method, insulated substrate surface is cleaned, after cleaning, insulated substrate is dried to processing;
(2) adopt Ultra-Violet Laser to irradiate the surface of above-mentioned insulated substrate, thus active oxidation sijna rice grain;
(2-1) insulated substrate step (2) being obtained is placed in plasm reaction cavity, by plasma, insulated substrate surface is bombarded, and forms coarse insulated substrate surface;
(2-2) the insulated substrate surface obtaining after to step (2-1) by deionized water rinsing or cleaned by ultrasonic vibration method is cleaned, and after cleaning, insulated substrate is dried to processing;
(3) the insulated substrate surface jet-plating metallization copper obtaining in step (2-2), concrete technical process is: insulated substrate is placed in vacuum splashing and plating chamber, in airtight environment, vacuum splashing and plating chamber is vacuumized, when being evacuated to 5 × 10
-6after torr, pass into inert gas, make vacuum chamber remain on 5 × 10
-4under the environment of torr, start sputter copper target insulated substrate is carried out to copper facing, wherein the copper thickness of sputter is 25 microns;
(3-1) spatter copper-plated insulated substrate and carry out heat treated completing;
(4) on the surface of spattering copper-plated insulated substrate, carry out conducting wire printing completing.
Above execution mode is described in detail the present invention, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (5)
1. a circuit board, it is characterized in that: described circuit board has plastic insulation substrate or ceramic insulation substrate, pick-up metal oxide nano particles in described plastic insulation substrate or ceramic insulation substrate, also has copper plate on described plastic insulation substrate or ceramic insulation substrate.
2. on circuit board, form a method for conducting wire, it is characterized in that described method in turn includes the following steps:
(1) provide insulated substrate, pick-up metal oxide nano particles in insulated substrate:
(2) adopt Ultra-Violet Laser to irradiate the surface of above-mentioned insulated substrate, thus activated metal oxide nano particles;
(3) the insulated substrate surface jet-plating metallization copper obtaining in step (2);
(4) on the surface of spattering copper-plated insulated substrate, carry out conducting wire printing completing.
3. method as claimed in claim 2, is characterized in that:
Between step (1) and (2), insulated substrate is cleaned, for example by deionized water rinsing or cleaned by ultrasonic vibration, the pollutant on insulated substrate surface is cleaned, after cleaning, by clean hot blast, insulated substrate is dried to processing;
Between step (2) and (3), the insulated substrate obtaining is placed in plasm reaction cavity, by plasma, insulated substrate surface is bombarded, so that insulated substrate surface is corroded, thereby form coarse insulated substrate surface; Then, by deionized water rinsing or cleaned by ultrasonic vibration, the pollutant on insulated substrate surface is cleaned, after cleaning, by clean hot blast, insulated substrate is dried to processing;
Between step (3) and (4), spatter copper-plated insulated substrate and carry out heat treated completing, thereby further strengthen the bond strength on Copper Foil and insulated substrate surface.
4. method as claimed in claim 3, is characterized in that:
Insulated substrate is plastic insulation substrate or ceramic insulation substrate; Metal oxide nanoparticles is titanium oxide, zinc oxide, aluminium oxide, tin oxide or chromium oxide nano particle, and its particle size range is 100 nanometer to 500 nanometers, and preferred scope is 200 nanometer to 350 nanometers.
5. method as claimed in claim 4, is characterized in that:
Wherein in step (3), the technical process of jet-plating metallization copper is: insulated substrate is placed in vacuum splashing and plating chamber, in airtight environment, vacuum splashing and plating chamber is vacuumized, when being evacuated to 5 × 10
-6after torr, pass into inert gas, make vacuum chamber remain on 5 × 10
-4under the environment of torr, start sputter copper target insulated substrate is carried out to copper facing, in the time that the copper thickness of institute's sputter is in the scope of 5-30 micron, finish sputtering process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549679.5A CN103813622A (en) | 2013-11-07 | 2013-11-07 | Circuit board and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549679.5A CN103813622A (en) | 2013-11-07 | 2013-11-07 | Circuit board and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN103813622A true CN103813622A (en) | 2014-05-21 |
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|---|---|---|---|
| CN201310549679.5A Pending CN103813622A (en) | 2013-11-07 | 2013-11-07 | Circuit board and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030031803A1 (en) * | 2001-03-15 | 2003-02-13 | Christian Belouet | Method of metallizing a substrate part |
| CN102184888A (en) * | 2011-04-11 | 2011-09-14 | 常州大学 | Multilayer copper interconnection manufacturing method |
| CN102450110A (en) * | 2009-05-26 | 2012-05-09 | 荒川化学工业株式会社 | Flexible circuit board and method for manufacturing same |
| CN102602117A (en) * | 2012-03-21 | 2012-07-25 | 苏州东亚欣业节能照明有限公司 | Method for preparing copper-clad plate |
| CN103188877A (en) * | 2013-03-05 | 2013-07-03 | 深圳光韵达光电科技股份有限公司 | Quick high-flexibility manufacturing method for ceramic circuit board |
-
2013
- 2013-11-07 CN CN201310549679.5A patent/CN103813622A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030031803A1 (en) * | 2001-03-15 | 2003-02-13 | Christian Belouet | Method of metallizing a substrate part |
| CN102450110A (en) * | 2009-05-26 | 2012-05-09 | 荒川化学工业株式会社 | Flexible circuit board and method for manufacturing same |
| CN102184888A (en) * | 2011-04-11 | 2011-09-14 | 常州大学 | Multilayer copper interconnection manufacturing method |
| CN102602117A (en) * | 2012-03-21 | 2012-07-25 | 苏州东亚欣业节能照明有限公司 | Method for preparing copper-clad plate |
| CN103188877A (en) * | 2013-03-05 | 2013-07-03 | 深圳光韵达光电科技股份有限公司 | Quick high-flexibility manufacturing method for ceramic circuit board |
Non-Patent Citations (2)
| Title |
|---|
| 刘宝俊: "《材料的腐蚀及其控制》", 28 February 1989 * |
| 聂荣: "《实例解析PCB设计技巧 基于Protel DXP》", 31 March 2006 * |
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Application publication date: 20140521 |
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