CN103812457A - 在功率放大器中提供集成定向耦合器 - Google Patents
在功率放大器中提供集成定向耦合器 Download PDFInfo
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Abstract
本发明涉及在功率放大器中提供集成定向耦合器。一种功率放大器包含:功率放大器核心,其包含多个增益级以接收射频RF信号以及输出经放大的RF信号;输出网络,其耦合到所述功率放大器核心以接收所述经放大的RF信号且输出发射输出功率信号;以及定向耦合器,其耦合到所述输出网络以获得与所述发射输出功率信号成比例的经耦合信号。在一项实施例中,这些组件中的每一者都可配置于单个半导体裸片上。
Description
技术领域
背景技术
在无线通信装置中,通常使用射频(RF)功率放大器(PA)来在通信***内的操作所需的增加的功率电平下提供发射信号。举例来说,蜂窝电话装置使用PA来在与蜂窝基站有效地通信所需的功率电平下发射信号。另外,这些发射功率电平通常由通信装置进行调整。在许多通信装置中,使用定向耦合器来***出发射输出信号的一定比例的部分,使得所述装置可以监视发射输出功率。
发明内容
根据一个方面,一种功率放大器包含:功率放大器核心,其包含多个增益级以接收射频(RF)信号以及输出经放大的RF信号;输出网络,其耦合到所述功率放大器核心以接收所述经放大的RF信号且输出发射输出功率信号;以及定向耦合器,其耦合到所述输出网络以获得与所述发射输出功率信号成比例的经耦合信号。这些组件中的每一者都可配置于单个半导体裸片上。
反过来,第一接合线耦合到与所述输出网络耦合的第一焊盘以及与所述定向耦合器的输入端口耦合的第二焊盘。并且,第二接合线耦合到与所述定向耦合器的耦合端口耦合的第三焊盘以及与静电放电(ESD)电路的输入端耦合的第四焊盘。第三接合线可耦合到与所述ESD电路的输出端耦合的第五焊盘且耦合到半导体封装的输出焊盘。
在一实施例中,所述定向耦合器包含:第一传输线,其形成于第一金属层上且耦合在所述第二焊盘与所述单个半导体裸片上的第六焊盘之间;以及第二传输线,其形成于第二金属层上且耦合在所述单个半导体裸片上的第七焊盘与第八焊盘之间。所述定向耦合器可进一步包含:第一电容器,其耦合在所述第一传输线与所述第二传输线之间;以及第二电容器,其耦合在所述第一传输线与参考电压节点之间。另外,所述定向耦合器可包含:第三电容器,其耦合在所述第二传输线与所述参考电压节点之间;以及第四电容器,其耦合在所述第二传输线与所述参考电压节点之间。
在一实施例中,所述输出网络包含:第一变压器,其具有耦合到所述多个增益级中的最后一级的第一电感器以及耦合到所述第一焊盘的第二电感器;以及第二变压器,其具有耦合到所述多个增益级中的所述最后一级的第三电感器以及耦合到所述第一焊盘的第四电感器。反过来,所述第一焊盘可位于所述第一变压器与所述第二变压器之间。
本发明的另一方面是针对一种功率放大器,其具有:多个增益级,其用以接收RF信号以及输出经放大的RF信号;输出网络,其耦合到所述增益级以接收所述经放大的RF信号且经由所述输出网络的输出焊盘输出发射功率信号;以及定向耦合器,其具有输入端口、输出端口、耦合端口和隔离端口。此耦合器经由接合线耦合到所述输出网络,所述接合线耦合到所述输出网络的所述输出焊盘且耦合到所述定向耦合器的所述输入端口。所述输出网络与所述定向耦合器可配置于单个半导体裸片上。
本发明的另一方面是针对一种方法,其包含如上所述在单个半导体裸片上形成PA和RF耦合器。所述方法包含:将第一接合线附接在所述输出网络与所述RF耦合器的所述输入端口之间;以及将第二接合线附接在所述RF耦合器的所述输出端口与半导体封装的第一裸片外焊盘之间。请注意,这些附接操作可按照任何次序执行。所述方法可进一步包含:将第三接合线附接在所述RF耦合器的所述耦合端口与所述单个半导体裸片的ESD电路的输入端之间;以及将第四接合线附接在所述ESD电路的输出端与所述半导体封装的第二裸片外焊盘之间。
附图说明
图1是根据本发明的实施例的功率放大器的示意图。
图2是关于根据本发明的实施例的定向耦合器的更多细节的示意图。
图3是根据本发明的实施例的定向耦合器的电气示意图。
图4是根据本发明的实施例的PA裸片的俯视图。
图5是根据本发明的实施例的半导体封装的截面图。
图5A是图5的截面的另一近视图。
图6是根据本发明的实施例的多个PA的框图。
图7是根据本发明的实施例的用于制作功率放大器的方法的流程图。
图8是根据本发明的实施例的无线装置的框图。
具体实施方式
在各种实施例中,例如配置于单个半导体裸片上的功率放大器(PA)可包含裸片上定向耦合器,以从所述PA***出输出信号的一定比例部分。此一定比例的信号可用于监视PA的输出功率。通过提供裸片上定向耦合器,可以避免单独耦合器(作为单独芯片或作为多芯片模块内的单独裸片)的大小和花费。
虽然在一些实施方案中,此裸片上定向耦合器可直接耦合到PA的输出网络,但是在许多情况下,所述定向耦合器可位于裸片上与所述输出网络实际上不同的位置中以提供隔离措施。因此,为了将输出信号耦合到定向耦合器,提供互连构件。在许多实施例中,此互连构件是用以将输出网络耦合到定向耦合器的接合线。因此,此接合线为将单个半导体裸片上的两个点耦合到一起的裸片内(即,同一裸片到同一裸片)接合线。以此方式,输出网络与定向耦合器可在裸片上物理上隔离,但又物理上连接以实现对发射输出功率的成比例测量,所述发射输出功率将从主功率输出信号***出且提供到监视电路,所述监视电路在PA自身内或在耦合到PA的装置(例如收发器或基带处理器)内。
现在参考图1,所示为根据本发明的实施例的功率放大器的示意图。如图1所示,PA100是互补金属氧化物半导体(CMOS)功率放大器,其集成在单个半导体裸片110上且实施于封装内。虽然可提供不同种类的半导体封装,但是在一实施例中,裸片110可配置于特定半导体封装内,例如双排扁平无引线(DFN)、焊盘网格阵列(LGA),或在封装的***包含多个焊盘以通过所述封装提供与芯片外装置的互连的另一封装类型,所述芯片外装置例如为无线***的其它组件,包含输入侧上的收发器以及输出侧上的天线或其它辐射构件。
如所见,进入的RF信号经由封装的输入焊盘105(即,RF输入(RFI)焊盘)耦合到PA的输入。经由将此裸片外焊盘耦合到裸片上焊盘115的接合线108,因此形成到PA的连接。在所示实施例中,PA核心120包含预驱动器级125,所述预驱动器级125接收此进入的RF信号(其可为单端的)且将其调节为差分且预驱动的信号。反过来,此信号被提供到驱动器级130,其包含并行路径130a和130b。在一些实施例中,这些不同路径可对应于低功率路径和高功率路径。取决于通信协议的特定要求,可启用这些路径中的仅一者。在驱动器级130中进行放大之后,经放大的RF信号被提供到最后一级140,所述级140包含并行路径140a和140b,用于将RF信号进一步放大到所需的发射输出功率电平。
请注意,虽然PA核心120在简化视图中展示为具有三个级,但是应理解,本发明的范围在此方面是不受限制的且可以存在更多或更少的级。在一实施例中,这些级中的每一者的增益装置是使用由金属氧化物半导体场效晶体管(MOSFET)装置形成的跨导体来实施,例如第7,728,661号美国专利中更全面地描述,所述美国专利的揭示内容以引用方式特此并入。当然,可以使用包含GaAs或双极晶体管的其它类型的增益级,来替代基于CMOS晶体管的放大器级。在图1中还应注意,各个级之间的耦合是经由使用多个裸片上电感器实现的电感耦合来进行。替代此基于磁的耦合,不同级之间的电容性或其它电气类型的耦合也是可能的。
从最后一级140,发射输出信号通过输出网络150耦合,在所示实施例中,所述输出网络使用一对变压器形成,即,由经耦合的电感器L1和L2形成的第一变压器以及由经耦合的电感器L3和L4形成的第二变压器。所得发射输出信号因此耦合到裸片上焊盘155,所述裸片上焊盘又经由裸片到裸片接合线160耦合到另一裸片上焊盘162。以此方式,在输出网络150与定向耦合器170之间提供了物理隔离。
如图所见,定向耦合器170包含四个端口,包含输入端口162和输出端口166(参考标号也均用对应裸片上焊盘来识别)以及经耦合端口164和隔离端口168(也均用裸片上焊盘来识别)。经由输入端口162接收的进入放大发射信号经由传输线传递到输出端口166且作为发射(TX)信号提供到芯片外。经由此定向耦合器,来自输出端口166的发射输出信号经由接合线191传送到芯片外,所述接合线又耦合到引线框内的RF输出(RFO)焊盘192。定向耦合器170还包含第二传输线,所述第二传输线电磁耦合到其它传输线,使得经耦合端口164上的信号提供与经过端口162和166的RF信号的发射正向功率波成比例的功率,且使得隔离端口168上的信号提供与经过端口162和166的RF信号的反向发射功率波成比例的功率。RF正向功率指示信号可用作RF发射(TX)功率指示信号。举例来说,此RF发射(TX)功率指示信号可由外部电路用来确定PA所提供的发射功率,所述发射功率之后可用以调整发射(TX)功率控制信号以便实现到天线的所需发射功率。
借助于定向耦合器170内实现的耦合,此信号的经耦合版本经由裸片到裸片接合线181且又经由接合线197传送到引线框内的耦合(CPL)焊盘196。请注意,在所示实施例中,为了对此信号提供静电放电防护,经耦合的信号耦合到ESD防护电路180,在一实施例中,所述ESD防护电路可经由一个或一个以上二极管实施,如第2012/0113553号美国公开中所描述,所述公开的揭示内容以引用方式并入本文。当然,在一些实施例中,可以不提供此ESD电路,且定向耦合器的经耦合端口可直接耦合到芯片外连接。经由另一裸片上焊盘184,此ESD的经耦合信号经由接合线197传送到CPL焊盘196。如进一步所见,来自定向耦合器170的隔离端口168的经隔离信号可经由接合线193耦合到隔离(ISO)焊盘194。
如进一步所示,额外电路190存在于裸片110上以提供接口和支持。此类电路可包含控制电路、感测电路等等。虽然在图1的实施例中这样概括性地展示,但应理解,本发明的范围在此方面不受限制。
现在参考图2,所示为关于根据本发明的实施例的定向耦合器的更多细节的示意图。具体来说,图2所示为定向耦合器200的布局的顶层视图。如所见,大体上,定向耦合器可由一对传输线220和230形成。传输线220耦合在第一焊盘210与第二焊盘215之间,其中第一焊盘210可经由裸片到裸片接合线205从PA的输出网络接收经放大的RF输出信号。在一实施例中,传输线220可具有大约280微米(μm)的长度以及大约50μm的宽度。此信号因此经由传输线220传送到RF输出接合焊盘215,所述接合焊盘又耦合到接合线218,所述接合线又耦合到引线框或其它半导体封装(图2中未示)内的芯片外接合焊盘。在一实施例中,传输线220可形成于多层半导体裸片的给定层上。作为一个实例,传输线220和对应的接合焊盘可形成于金属7(M7)层上,所述M7层在特定实施方案中可形成为相对较大厚度(例如,三微米(μm))的铜(Cu)层。
为了提供磁耦合,第二传输线230可被配置成与传输线220接近的物理布置,因此提供磁耦合措施,使得输出功率的小部分耦合到此传输线中。在实例实施例中,关于发射输出信号,此部分可为大约-20dB。如所见,传输线230与传输线220至少部分重叠,且耦合在接合焊盘240与245之间。另外要注意,接合焊盘240耦合到另一裸片到裸片接合线242,所述接合线242又耦合到裸片上ESD电路以将经耦合信号提供到所述ESD电路。反过来,接合焊盘245经由裸片到引线框接合线246耦合到封装内的隔离焊盘。在一实施例中,传输线230可形成于不同的金属层上,例如金属8(M8)层,其形成于M7层上方且形成于介入的电介质层(例如,由SiO2形成)上方。在一实施例中,传输线230可具有较窄的宽度,例如,传输线230可具有大约5μm的迹线宽度。
在RF信号经过耦合器200时,第一传输线220的主信号路径与第二传输线230的次信号路径之间的耦合产生了用于经耦合端口240和隔离端口245的信号,如上文所述。电感或磁耦合发生,以及主与次信号路径之间的RF耦合器内的电容或电气耦合也发生。因而,定向耦合器200将输出(即,分别经由焊盘215和245提供的信号输出和经隔离输出)经由裸片到引线框接合线提供到芯片外接合焊盘。并且,定向耦合器200进一步经由接合焊盘240通过裸片到裸片接合线242将经耦合或一定比例的输出信号提供到额外裸片上电路。虽然在图2的实施例中这样概括性地展示,但应理解,本发明的范围在此方面不受限制。
现在参考图3,所示为根据本发明的实施例的定向耦合器的电气示意图。如图3所示,电路300包含PA核心310,其大体上包含PA的主要信号处理路径,从其输入端到PA的输出网络的输出端。如所见,来自PA核心310的输出经由传输线320传送且被输出为RF输出信号RFO。在此示意图中,传输线320由电感器L3表示。反过来,此传输线320实际上接近第二传输线330,所述第二传输线330由第二电感器L4表示,因此将发射输出功率的一定比例的量作为经耦合信号耦合到定向耦合器的耦合器端口CPL。请注意,提供给PA的经耦合信号输出的此经耦合信号可直接来自传输线320,或在从PA输出之前,其可又通过ESD电路耦合以提供ESD防护。更进一步,传输线320还提供经隔离输出,所述经隔离输出经由隔离端口ISO耦合。在一实施例中,由这些紧密耦合的传输线实现的磁耦合可为大约400微微亨(pH)。此电感器可形成为封装中的接合线之间的磁耦合与芯片上耦合器组件的磁耦合的组合。
请注意,在图3的示意图中,电容C1并联耦合在传输线320与参考电压节点(即接地或例如接地)之间。电容器C1可为小电容器,例如大约0到200毫微微法拉(fF)之间,且用以对耦合器与接合线的电感进行解谐以向PA呈现接近于50欧姆的输出阻抗。另外,电容可并联地耦合于传输线320与330之间,即电容Cc,其在一实施例中可经由有意电容和寄生电容的组合来实施。在一实施例中,耦合电容Cc可为大约150fF。寄生电容可存在于封装中的接合线与芯片上的耦合器结构之间。另外,电容器组件可放置于芯片上,其等于150fF-Cparasitic。在一实施例中,此芯片上电容器可为大约60fF且更一般地可在大约0到100fF的范围之内。类似地,额外电容器C2和C3可并联耦合在传输线330与参考电压节点之间以对耦合器与接合线的电感解谐,从而允许CPL和ISO封装输出实现50欧姆的匹配。虽然电容器C1、C2和C3可主要形成为到耦合器结构中的接地屏蔽的寄生电容器,但可存在某些小的固定电容器。对于实例1.95GHz耦合器(频带1),大约150fF的电耦合与大约400pH的磁耦合可实现高的定向性。
现在参考图4,所示为根据本发明的实施例的PA裸片的俯视图。如图4所示,裸片400为包含PA的所有电路的单个CMOS裸片,其可并入到给定半导体封装中,例如双排扁平无引线(DFN)封装。在所示的概括性图示中,PA核心405耦合到输出网络410,在所示实施例中,所述输出网络包含一对变压器T1和T2。在这些变压器之间的中点处,设置一输出焊盘412,所述输出焊盘耦合到裸片到裸片接合线415,所述裸片到裸片接合线415又耦合到定向耦合器420的输入焊盘422。如所见,输出焊盘424经由接合线425耦合到裸片到芯片外焊盘430,因此提供输出功率信号。并且,如本文所述但为了便于图示理解而未展示,定向耦合器420的耦合器端口耦合到ESD电路,例如,经由另一裸片到裸片接合线(图4中未示),以提供ESD防护(且接着到芯片外焊盘)。然而,在其它实施方案中,对于此经耦合信号,经由接合线从定向耦合器420到另一芯片外焊盘的直接耦合可发生。
现在参考图5,所示为根据本发明的实施例的半导体封装的截面图。如图5中所见,裸片400配置于衬底450上,在一实施例中,所述衬底可为耦合到裸片背面的接地铜块以提供导电性和良好的热性能。请注意,裸片到裸片接合线415的存在因而将同一裸片上的两个点耦合。如进一步所见,输入RF信号(例如,从收发器或***的另一组件接收到)经由耦合到输入焊盘401的接合线402耦合到裸片400,而反过来经放大的RF输出信号经由接合线462耦合到输出焊盘461,所述输出焊盘又可耦合到例如天线等辐射构件。
图5A是图5的截面的另一近视图。在图5A中,展示了裸片到裸片接合线415的细节。具体来说,线415的第一末端被配置为球416以提供到裸片上焊盘420的连接,在一实例中,所述球可位于最高金属层(例如M8层)上。反过来,接合线415的第二末端可配置为缝线或更尖削的末端418,其耦合到第二裸片上焊盘430。在各种实施例中,接合线415可由不同材料例如金形成。在一实施例中,所述球是通过熔化接合线末端使得在附接到裸片焊盘时其为熔融的来形成,且另一末端为缝线,在此处,所述接合线连接在所述焊盘上。所述裸片到裸片接合线可为金或另一适当的导电材料。
应理解,其它配置也是可能的。举例来说,连同其它PA一起,多个PA可提供在特定无线***中,其中每一此类PA是用于多频带***(例如,WCDMA、GSM)的一个或一个以上频带。
现在参考图6,所示为多个PA5100-510n的框图。每一PA可针对特定通信方案进行配置。这些PA中的一者或一者以上可为CMOS PA(如本文所述),且所述PA中的一者或一者以上可为另一类型的PA,例如GaAs或其它类型的PA。每一PA可包含定向耦合器或与定向耦合器相关联,使得可将关于发射输出功率的反馈信息从所述PA中的每一者提供到另一***组件,例如收发器520。在一实施例中,各种反馈信号550可按照菊链方式耦合,如图6所示。当然,其它实施方案也是可能的,例如每一PA将独立的反馈信号提供到收发器的实施方案。PA510中的一者或一者以上可包含如本文所述的集成定向耦合器,其至少部分地经由一个或一个以上裸片到裸片接合线实现。
请注意,包含集成耦合器的CMOS PA裸片到单个半导体封装中的封装可使用标准半导体封装技术用各种方式来实施。举例来说,像对许多集成电路所做的那样,所述装置可用具有外部接合线、外部连接接脚和/或外部接合焊盘的塑料绝缘封装来囊封。然而,应理解,可利用其它封装技术,同时仍如本文所述对CMOS PA和集成RF耦合器利用单个半导体裸片。
现在参考图7,所示为根据本发明的实施例的用于制作功率放大器的方法的流程图。如图7所示,方法700可开始于形成具有集成RF耦合器的PA裸片(框710)。大体上,此半导体制作可使用典型半导体处理技术(例如,对于CMOS工艺)来进行。然而,请注意,作为此过程的一部分,可提供多个金属层,所述金属层具有传输线、焊盘、电容等等,以实现定向RF耦合器与PA电路的共同定位。
在框720处,可将一个或一个以上接合线附接在对应的裸片上焊盘之间。在具有裸片上ESD电路的上述特定实施方案中,一个接合线可耦合在PA的输出网络与定向耦合器输入端之间,且另一接合线可耦合在定向耦合器耦合端口与此ESD电路之间。此些接合线连接可以是经由加热接合线的一个末端以与一个接合焊盘进行连接且接着施加缝线以将接合线的另一末端系固到另一接合焊盘来实现。方法700继续到框730,其中可将各种接合线耦合在裸片上与裸片外焊盘之间,从而为半导体装置提供输入和输出连接。请注意,可按照任一次序来执行框720和730,因为有时由于间隙问题裸片上到裸片外接合线是在裸片到裸片接合线之前附接。最后,可将裸片封装在所需的半导体封装中(框740)。
如上所述,PA(例如根据本发明实施例的CMOS PA)可实施于许多不同装置类型中。此类装置可用于各种无线***中,包含手持机、移动装置、PDA、平板计算机等等。现在参考图8,所示为根据本发明的实施例的无线装置1000的框图。如图8所示,无线装置1000可包含应用处理器1010,其可为微处理器或其它可编程逻辑,用以处置各种***特征,例如运行用户所需的应用程序。为了执行其功能,应用处理器1010可与存储器1015通信,所述存储器可为快闪存储器或其它非易失性存储器。应用处理器1010可进一步与显示器1020(例如,***的LCD显示器)通信。为了(例如)根据GSM/EDGE、W-CDMA或LTE等通信协议来处置RF通信(例如,无线电话呼叫、无线数据发射等等),应用处理器1010可与基带处理器1030通信,所述基带处理器可处置发射和接收路径两者上的基带操作。反过来,基带处理器1030耦合到收发器1040,所述收发器可从基带处理器1030接收进入的基带信号,且执行处理以将所述信号上变频为RF电平以便发射到PA1050。PA1050可为根据本发明实施例的功率放大器,其包含集成定向耦合器以提取发射输出功率信号的一定比例的量且将经耦合信号提供到收发器1040以供在功率控制操作中使用。在一些实施例中,来自基带处理器1030的控制信息可通过收发器1040耦合到PA1050。反过来,PA1050可耦合到天线开关、双工器或其两者1055,其又耦合到天线1060,所述天线辐射经放大的RF信号(请注意,在一些实施例中,可存在多个天线或其它负载)。
如图8中进一步所示,在接收路径中,天线1060通过天线开关1055且可能通过双工器或SAW滤波器耦合且之后耦合到收发器1040,所述收发器可将进入的RF信号解调回到基带,以便发射到基带处理器1030中进行进一步处理。虽然在图6的实施例中以此特定实施方案进行了展示,但本发明的范围在此方面不受限制。
虽然已关于有限数目的实施例描述了本发明,但所属领域的技术人员将了解到对此进行的众多修改和变化。希望所附权利要求书覆盖所有落在本发明的真实精神和范围内的此些修改和变化。
Claims (22)
1.一种功率放大器,其包括:
功率放大器核心,其包含多个增益级以接收射频RF信号以及输出经放大的RF信号;
输出网络,其耦合到所述功率放大器核心以接收所述经放大的RF信号且输出发射输出功率信号;以及
定向耦合器,其耦合到所述输出网络以获得与所述发射输出功率信号成比例的经耦合信号,其中所述功率放大器核心、所述输出网络以及所述定向耦合器配置于单个半导体裸片上。
2.根据权利要求1所述的功率放大器,其进一步包括第一接合线,所述第一接合线耦合到所述单个半导体裸片上的耦合到所述输出网络的第一焊盘且耦合到所述单个半导体裸片上的耦合到所述定向耦合器的输入端口的第二焊盘。
3.根据权利要求2所述的功率放大器,其进一步包括第二接合线,所述第二接合线耦合到所述单个半导体裸片上的耦合到所述定向耦合器的耦合端口的第三焊盘且耦合到所述单个半导体裸片上的耦合到静电放电ESD电路的输入端的第四焊盘。
4.根据权利要求3所述的功率放大器,其进一步包括第三接合线,所述第三接合线耦合到所述单个半导体裸片上的耦合到所述ESD电路的输出端的第五焊盘且耦合到包含所述单个半导体裸片的半导体封装的输出焊盘。
5.根据权利要求2所述的功率放大器,其中所述定向耦合器包括:
第一传输线,其形成于第一金属层上且耦合在所述第二焊盘与所述单个半导体裸片上的第六焊盘之间;以及
第二传输线,其形成于第二金属层上且耦合在所述单个半导体裸片上的第七焊盘与第八焊盘之间。
6.根据权利要求5所述的功率放大器,其进一步包括:
第一电容器,其耦合在所述第一传输线与所述第二传输线之间;以及
第二电容器,其耦合在所述第一传输线与参考电压节点之间。
7.根据权利要求6所述的功率放大器,其进一步包括:
第三电容器,其耦合在所述第二传输线与所述参考电压节点之间;以及
第四电容器,其耦合在所述第二传输线与所述参考电压节点之间。
8.根据权利要求5所述的功率放大器,其中所述第二传输线的第一末端耦合到配置于所述单个半导体裸片上的静电放电ESD电路,且所述第二传输线的第二末端耦合到包含所述单个半导体裸片的半导体封装的隔离焊盘。
9.根据权利要求2所述的功率放大器,其中所述定向耦合器经由所述第一接合线而物理上与所述输出网络隔离。
10.根据权利要求1所述的功率放大器,其中所述定向耦合器包括RF耦合器。
11.根据权利要求2所述的功率放大器,其中所述第一接合线的第一末端包括经熔化附接到所述第一焊盘上的球,且所述第一接合线的第二末端包括用以耦合到所述第二焊盘的缝线。
12.根据权利要求2所述的功率放大器,其中所述输出网络包括:
第一变压器,其具有耦合到所述多个增益级中的最后一级的第一电感器以及耦合到所述第一焊盘的第二电感器;以及
第二变压器,其具有耦合到所述多个增益级中的所述最后一级的第三电感器以及耦合到所述第一焊盘的第四电感器。
13.根据权利要求12所述的功率放大器,其中所述第一焊盘位于所述第一变压器与所述第二变压器之间。
14.一种功率放大器,其包括:
多个增益级,其用以接收射频RF信号以及输出经放大的RF信号;
输出网络,其耦合到所述多个增益级以接收所述经放大的RF信号且经由所述输出网络的输出焊盘输出发射功率信号;以及
定向耦合器,其具有输入端口、输出端口、耦合端口和隔离端口,所述定向耦合器经由接合线耦合到所述输出网络,所述接合线耦合到所述输出网络的所述输出焊盘且耦合到所述定向耦合器的所述输入端口,所述输出网络与所述定向耦合器配置于单个半导体裸片上。
15.根据权利要求14所述的功率放大器,其中所述定向耦合器包括:
第一传输线,其形成于第一金属层上且耦合在所述输入端口与所述输出端口之间;以及
第二传输线,其形成于第二金属层上且耦合在所述耦合端口与所述隔离端口之间。
16.根据权利要求15所述的功率放大器,其进一步包括:
第一电容器,其耦合在所述第一传输线与所述第二传输线之间;以及
第二电容器,其耦合在所述第一传输线与参考电压节点之间。
17.根据权利要求16所述的功率放大器,其进一步包括:
第三电容器,其耦合在所述第二传输线与所述参考电压节点之间;以及
第四电容器,其耦合在所述第二传输线与所述参考电压节点之间。
18.根据权利要求14所述的功率放大器,其中所述耦合端口耦合到配置于所述单个半导体裸片上的静电放电ESD电路,且所述隔离端口耦合到包含所述单个半导体裸片的半导体封装的隔离焊盘。
19.一种方法,其包括:
在单个半导体裸片上形成功率放大器PA和射频RF耦合器,所述单个半导体裸片包含:至少一个增益级,其用以接收RF信号以及输出经放大的RF信号;输出网络,其耦合到所述至少一个增益级以接收所述经放大的RF信号且输出发射输出功率信号;以及所述RF耦合器,其具有输入端口、输出端口、耦合端口和隔离端口;
将第一接合线附接在所述输出网络与所述RF耦合器的所述输入端口之间;以及
将第二接合线附接在所述RF耦合器的所述输出端口与半导体封装的第一裸片外焊盘之间。
20.根据权利要求19所述的方法,其进一步包括将第三接合线附接在所述RF耦合器的所述耦合端口与所述单个半导体裸片的静电放电ESD电路的输入端之间。
21.根据权利要求20所述的方法,其进一步包括将第四接合线附接在所述ESD电路的输出端与所述半导体封装的第二裸片外焊盘之间。
22.根据权利要求19所述的方法,其进一步包括在所述第一接合线之前附接所述第二接合线。
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