CN103812452B - Electronic system, radio-frequency power amplifier and temperature compensation thereof - Google Patents
Electronic system, radio-frequency power amplifier and temperature compensation thereof Download PDFInfo
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- CN103812452B CN103812452B CN201210457202.XA CN201210457202A CN103812452B CN 103812452 B CN103812452 B CN 103812452B CN 201210457202 A CN201210457202 A CN 201210457202A CN 103812452 B CN103812452 B CN 103812452B
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Abstract
The invention discloses a kind of electronic system, radio-frequency power amplifier and temperature compensation thereof, radio-frequency power amplifier includes bias current generation unit, the first impedance unit, the second impedance unit, the 3rd impedance unit and output stage unit.Bias current generation unit receives reference voltage.There is between second impedance unit and the first impedance unit the first voltage of negative temperature coefficient, and the second impedance unit receives earth current.There is between 3rd impedance unit and the second impedance unit the second voltage, and the dividing potential drop that the second voltage is the first voltage.Bias current generation unit the second voltage is with the bias current of output tool positive temperature coefficient.Output stage unit receives input current.Bias current adds earth current, and the characteristic of input current tool positive temperature coefficient equal to input current.
Description
Technical field
The present invention is related to a kind of radio-frequency power amplifier, and has temperature-compensating especially with regard to a kind of
Radio-frequency power amplifier.
Background technology
In wireless communication handset, main dc power consumption comes from radio-frequency power amplifier.
Therefore, make radio-frequency power amplifier can have high linearity and will not allow amplification distorted signals, and can be with
Time there is high efficiency to extend the research emphasis of call duration time, always Design of RF Power Amplifier.Especially
Orthogonal frequency multiplexing (OFDM) digital modulation technique that it the most widely uses has
Significantly time-varying ripple bag characteristic, its peak to average power ratio numerical constant (PAPR) is far beyond existing channel radio
Communication system is high, and in other words, its ripple bag is more violent, therefore to radio frequency power amplification to time change
The linearity of device also can be higher.
Refer to the physical circuit figure that Fig. 1, Fig. 1 are existing radio-frequency power amplifier.Existing radio-frequency power
Amplifier includes transistor Q1, resistance (R1 ', R2 ') and transistor Q2, and wherein transistor Q1 be sky
The field-effect transistor of weary type and transistor Q2 are bipolar junction transistor.The drain electrode of transistor Q1 receives ginseng
Examine the source electrode of one end coupling transistors Q1 of voltage VREF ', resistance R1 ', another of resistance R1 '
The grid of end coupling transistors Q1, the other end of one end coupling resistance R1 ' of resistance R2 ', resistance
The base stage of the other end coupling transistors Q2 of R2 ', the emitter-base bandgap grading of transistor Q2 couples ground voltage GND,
The collector coupling system voltage VCC ' of transistor Q2.
In existing radio-frequency power amplifier 100, the electric current ID ' of transistor Q1 one definite value of output,
And this electric current ID ' can be equal to the input current IB ' (base current) of transistor Q2.Because transistor
The current gain (β) of Q2 is negative temperature coefficient, and electric current ID ' is one close to the electric current of zero-temperature coefficient,
So the output electric current IC ' of transistor Q2 is the electric current of negative temperature coefficient, can be along with the change of ambient temperature
Change and change.
Referring to the simulation curve figure that Fig. 2 A～2C, Fig. 2 A～2C is corresponding diagram 1, this three figure
Abscissa all represents temperature, and its temperature range is all set to-40 DEG C to+90 DEG C.In fig. 2, ordinate
Representing electric current ID ', the bias current ID ' shown in Fig. 2 A is along with the change of ambient temperature, bias current
The value of ID ' is substantially equal to definite value.In fig. 2b, ordinate represents current gain, the electricity in Fig. 2 B
The value of flow enhancement can be successively decreased along with the rising of temperature.In fig. 2 c, ordinate represents output electric current IC ',
Output electric current IC ' successively decreases along with the rising of temperature, and then significantly has influence on existing radio-frequency power amplifier
100 outputs, may not meet current communication system and operate power amplifier when high and low temperature environment
The requirement of characteristic.
Summary of the invention
It is an object of the invention to provide a kind of radio-frequency power amplifier, described radio-frequency power amplifier includes
Bias current generation unit, the first impedance unit, the second impedance unit, the 3rd impedance unit and output stage
Unit.Bias current generation unit receives reference voltage.First impedance unit is electrically connected with bias plasma miscarriage
Raw unit.Second impedance unit is electrically connected with the first impedance unit, the second impedance unit and the first impedance list
There is between unit the first voltage of negative temperature coefficient, and the second impedance unit receives earth current.3rd
Impedance unit is electrically connected with the second impedance unit, has between the 3rd impedance unit and the second impedance unit
Two voltages, and the dividing potential drop that the second voltage is the first voltage, wherein bias current generation unit is electrically connected with
To between the second impedance unit and the 3rd impedance unit, bias current generation unit the second voltage is with defeated
Provide the bias current of positive temperature coefficient.Output stage unit is electrically connected to the first impedance unit and the second resistance
Between anti-unit, output stage unit receives input current.Bias current is electric plus ground connection equal to input current
Stream, and the characteristic of input current tool positive temperature coefficient, when output electric current and the input current of output stage unit
Between ratio numerical constant when being negative temperature coefficient, the temperature coefficient of output electric current is substantially equal to zero-temperature coefficient system
Number.
In one of them embodiment of the present invention, the first voltage is provided by this output stage unit.
In one of them embodiment of the present invention, bias current generation unit includes the first transistor.First
The drain electrode of transistor couples reference voltage, and the grid of the first transistor receives the second voltage, the first transistor
Source electrode output bias current, the first transistor according to the second voltage with output tool positive temperature coefficient bias
Electric current, wherein the first transistor is depletion transistor.
In one of them embodiment of the present invention, the first impedance unit includes the first resistance.First resistance
One end couples the source electrode of the first transistor, and the size of bias current is according to the resistance value of the first resistance and reference
Voltage determines.
In one of them embodiment of the present invention, the second impedance unit includes the second resistance.Second resistance
One end couples the other end of the first resistance, has the of negative temperature coefficient between the second resistance and the first resistance
One voltage, wherein one end of the second resistance receives earth current.
In one of them embodiment of the present invention, the 3rd impedance unit includes the 3rd resistance.3rd resistance
One end couples the other end of the second resistance, and the other end of the 3rd resistance couples ground voltage, the 3rd resistance with
Having the second voltage, and the dividing potential drop that the second voltage is the first voltage between second resistance, wherein first is brilliant
The grid of body pipe couples between the second resistance and the 3rd resistance, and by adjusting second and the 3rd resistance
Resistance value so that the bias current of the first transistor output tool positive temperature coefficient.
In one of them embodiment of the present invention, output stage unit includes transistor seconds.Transistor seconds
Base stage couple between the first resistance and the second resistance and receive input current, the emitter-base bandgap grading coupling of transistor seconds
Connect ground voltage, the collector coupling system voltage of transistor seconds, wherein the base emitter-base bandgap grading electricity of transistor seconds
Pressure is the first voltage, and transistor seconds is brilliant to compensate second by the input current of tool positive temperature coefficient
The output electric current of body pipe.
The embodiment of the present invention provides a kind of electronic system, it is adaptable to radio communication, described electronic system includes
Radio-frequency power amplifier and load.Radio-frequency power amplifier amplifies in order to stable output, radio-frequency power
Device receives radio-frequency input signals and output radio frequency output signal.Load is electrically connected to radio-frequency power amplifier,
Load is in order to receive radio frequency output signal, and wherein bias current generation unit the second voltage is to export tool
The bias current of positive temperature coefficient.
The embodiment of the present invention provides a kind of temperature compensation, and temperature compensation comprises the following steps.Will
The base emitter voltage of tool negative temperature coefficient is as the first voltage in bias circuit；By the second Voltage Feedback extremely
Bias current generation unit, wherein the second voltage is the dividing potential drop of the first voltage；Produce tool positive temperature coefficient
Input current, wherein the ratio numerical constant between output electric current and the input current of output stage unit is subzero temperature
During degree coefficient, the temperature coefficient of output electric current is substantially equal to zero-temperature coefficient.
In sum, electronic system, radio-frequency power amplifier and the temperature thereof that the embodiment of the present invention is proposed
Compensation method, it is possible to make the output electric current of radio-frequency power amplifier and output not produce change with temperature
Change, and then stablize the high linearity of radio-frequency power amplifier.
It is further understood that inventive feature and technology contents for enabling, refers to below in connection with the present invention
Detailed description and accompanying drawing, but these explanations are only used for institute's accompanying drawings the present invention is described, rather than to this
The right of invention makees any restriction.
Accompanying drawing explanation
The specific embodiment of the present invention has the most been explained with reference to alterations, thereby can be to this
Bright the clearest, such graphic in:
Fig. 1 is the physical circuit figure of existing radio-frequency power amplifier.
Fig. 2 A～2C is the simulation curve figure of corresponding diagram 1.
Fig. 3 is the block diagram of the radio-frequency power amplifier according to the embodiment of the present invention.
Fig. 4 is the physical circuit schematic diagram of the radio-frequency power amplifier according to another embodiment of the present invention.
Fig. 5 A～5C is the simulation curve figure of corresponding diagram 4.
Fig. 6 is the block diagram of the electronic system according to the embodiment of the present invention.
Fig. 7 is the flow chart of the temperature compensation according to the embodiment of the present invention.
Wherein, description of reference numerals is as follows:
100: existing radio-frequency power amplifier
Q1, Q2: transistor
300,400: radio-frequency power amplifier
310: bias current generation unit
320: the first impedance units
330: the second impedance units
340: the three impedance units
350: output stage unit
600: electronic system
610: radio-frequency power amplifier
620: load
CV1, CV2, CV3: curve
C1: the first electric capacity
C2: the second electric capacity
GND: ground voltage
IC ', IC: output electric current
ID: bias current
ID ': bias current
IB ', IB: input current
IR: earth current
L1: the first inductance
N1: node
T1: the first transistor
T2: transistor seconds
R1: the first resistance
R1 ': resistance
R2: the second resistance
R2 ': resistance
R3: the three resistance
RFIN: radio-frequency input signals
RFOUT: radio frequency output signal
S710～S730: step
V1: the first voltage
V2: the second voltage
VCC ', VCC: system voltage
VGS: gate-source voltage
VBE: base emitter voltage
VREF ', VREF: reference voltage
Detailed description of the invention
Various exemplary embodiments will be more fully described, in alterations below referring to alterations
Show some exemplary embodiments.But, concept of the present invention may embody in many different forms, and
Should not be construed as limited by exemplary embodiments set forth herein.Specifically, it is provided that these are exemplary
Embodiment makes the present invention for detailed and complete, and will will fully pass on the present invention to those skilled in the art
The category of concept.All graphic in, can be in order to clear and lavish praise on oneself size and the relative size in Ceng Ji district.Class
All the time like is indicated like numeral.
Although should be understood that possible use term first, second, third, etc. are to describe various element herein,
But these multiple elements should not limited by these terms.These terms are to distinguish an element and another element.
Therefore, the first element being discussed herein below can be described as second element teaching without departing from concept of the present invention.As
Used herein, term " and/or " any one and the one or many person that list in project that include being associated
All combinations.
(embodiment of radio-frequency power amplifier)
Refer to the block diagram that Fig. 3, Fig. 3 are the radio-frequency power amplifier according to the embodiment of the present invention.
Radio-frequency power amplifier 300 includes that bias current generation unit the 310, first impedance unit 320, second hinders
Anti-unit the 330, the 3rd impedance unit 340 and output stage unit 350.
First impedance unit 320 is electrically connected with bias current generation unit 310.Second impedance unit 330
It is electrically connected with the first impedance unit 320.3rd impedance unit 340 is electrically connected with the second impedance unit 330,
And bias current generation unit 310 is electrically connected with the second impedance unit 330 and the 3rd impedance unit 340
Between.Output stage unit 350 is electrically connected with between the first impedance unit 320 and the second impedance unit 330.
Radio-frequency power amplifier 300 in order to amplify radio-frequency input signals, wherein bias current generation unit 310
Receive reference voltage VREF and produce bias current ID, and reference voltage VREF is usually by direct current extremely
Direct current transducer (DC-DC converter) or general defeated by transceiver integrated circuit (Transceiver IC)
Enter the voltage that output (General Purpose Input/Output, GPIO) provides fixing.Second impedance unit
330 and the first first voltage V1 between impedance unit 320 with negative temperature coefficient, described first voltage
V1 is to be provided by output stage unit 350, and the second impedance unit 330 receives earth current IR.The
Between three impedance units 340 and the second impedance unit 330, there is the second voltage V2, and the second voltage
V2 is the dividing potential drop of the first voltage V1, and the most described second voltage V2 has the characteristic of negative temperature coefficient.
Output stage unit 350 receives input current IB.Bias current generation unit 310 can be according to the second voltage V2
With the bias current ID of output tool positive temperature coefficient, wherein bias current ID adds equal to earth current IR
Input current IB, therefore input current IB is the electric current of positive temperature coefficient.Defeated when output stage unit 350
The ratio numerical constant gone out between electric current and input current IB is negative temperature coefficient, and the temperature coefficient of output electric current is real
Equal to zero-temperature coefficient in matter.The radio-frequency power amplifier 300 that this disclosure is provided can be stablized defeated
Go out output electric current and the output of grade unit 350, and then maintain the high line of radio-frequency power amplifier 300
Property degree.
Positive temperature coefficient described in this disclosure indicates its physical quantity (such as magnitude of voltage, current value or resistance value)
And proportional between temperature, say, that when temperature rises or falls, its physical quantity can be along with
Temperature and rise or fall；Negative temperature coefficient described in this disclosure indicates between its physical quantity and temperature
Inversely, say, that when temperature rises or falls, its physical quantity can decline along with temperature
Or rise.Zero-temperature coefficient described in this disclosure indicates its physical quantity (such as magnitude of voltage, current value or electricity
Resistance) and temperature between be separate relation, say, that when temperature rises or falls, its thing
Reason amount can't rise or fall along with temperature.
It is described below, is the concrete action teaching power amplifier further.
Continuing referring to Fig. 3, this disclosure mainly utilizes will have negative temperature system in output stage unit 350
First voltage V1 of number is electrically connected to the first impedance unit 320 and the second impedance in the way of similar feedback
Between unit 330, and due to the dividing potential drop that the second voltage V2 is the first voltage V1, therefore the second voltage
V2 has the characteristic of negative temperature coefficient equally.Then, this disclosure utilizes the second voltage V2 to feed back to
The bias current ID's that bias current generation unit 310 is exported with change bias current generation unit 310
Temperature coefficient characteristics, so that bias current ID presents the characteristic of positive temperature coefficient.Bias current generation unit
According to received reference voltage VREF and the second voltage V2,310 determine that bias current ID's is big
Little.In the present embodiment, the bias current ID summation equal to earth current IR and input current IB, institute
With input current IB and earth current IR also can as there is the characteristic of positive temperature coefficient.When output stage list
When the output electric current of unit 350 and the ratio numerical constant of input current IB have the characteristic of negative temperature coefficient, output
The temperature coefficient of electric current can close to or substantially equal to zero-temperature coefficient.
Furthermore, it is understood that in one embodiment, output stage unit 350 is a bipolar junction transistor (Bipolar
Junction Transistor, BJT).The base stage of bipolar junction transistor receives input current IB and inputs with radio frequency
Signal RFIN, the collection level of bipolar junction transistor is coupled to system voltage, and exports electric current and penetrate
Frequently output signal RFOUT, the emitter-base bandgap grading of bipolar junction transistor couples ground voltage, wherein the output of BJT
Ratio numerical constant between electric current and input current is the beta (β) of tool negative temperature coefficient, that is current gain
(current gain).The base emitter voltage of bipolar junction transistor is the voltage of tool negative temperature coefficient, and
In the present embodiment, using this base emitter voltage as the first voltage V1.Therefore, designer can be according to above-mentioned
Disclosure the base current (base current) of bipolar junction transistor is adjusted to tool positive temperature system
The electric current of number, also the input current IB of bipolar junction transistor will be adjusted to the electricity of tool positive temperature coefficient
Flow, and then the output electric current of bipolar junction transistor then can tune to the electric current close to zero-temperature coefficient.
Accordingly, radio-frequency power amplifier 300 can provide excellent temperature compensation effect so that radio frequency merit
The output of rate amplifier 300 is stablized with remaining in that when exporting electric current relative to variations in temperature, and then
Maintain high linearity to be unlikely and allow amplification distorted signals.
In ensuing embodiment, description is different from the part of above-mentioned Fig. 3 embodiment, and omit with
The same section of above-mentioned Fig. 3 embodiment.Additionally, for explanation conventionally, similar reference number or mark
Number represent similar element.
(another embodiment of radio-frequency power amplifier)
Refer to the concrete electricity that Fig. 4, Fig. 4 are the radio-frequency power amplifier according to another embodiment of the present invention
Road schematic diagram.In the present embodiment, bias current generation unit 310 includes the first transistor T1.First
Impedance unit 320 includes the first resistance R1.Second impedance unit 330 includes the second resistance R2.3rd resistance
Anti-unit 340 includes the 3rd resistance R3.Output stage unit 350 includes transistor seconds T2.
The drain electrode of the first transistor T1 couples reference voltage VREF, its source electrode output bias current ID, its
Grid couples between the second resistance R2 and the 3rd resistance R3 and receives the second voltage V2.First resistance R1
One end couple the source electrode of the first transistor.One end of second resistance R2 couples another of the first resistance R1
End.One end of 3rd resistance R3 couples the other end of the second resistance R2, the other end of the 3rd resistance R3
Couple ground voltage GND.The base stage of transistor seconds T2 couples the first resistance R1 and the second resistance R2
Between, the emitter-base bandgap grading of transistor seconds T2 couples ground voltage GND, and the collector of transistor seconds T2 couples
System voltage VCC.
In the present embodiment, the first transistor T1 has positive temperature coefficient according to the second voltage V2 with output
Bias current ID, wherein the first transistor T1 is vague and general type (depletion-type), and the first transistor
T1 is biased in saturation region (saturation region).The size of bias current ID is according to reference voltage VREF
Determined with the second voltage V2, and can be adjusted by the resistance value of the first resistance R1.Second electricity
There is between resistance R2 and the first resistance R1 the first voltage V1 of negative temperature coefficient, and this first voltage V1
Base emitter voltage VBE for transistor seconds T2.Have between 3rd resistance R3 and the second resistance R2
Second voltage V2, and the dividing potential drop that the second voltage V2 is the first voltage V1, therefore the second voltage V2 is also
There is the characteristic of negative temperature coefficient.By adjusting the second resistance R2 and the resistance value of the 3rd resistance R3, make
Obtain the bias current ID of the first transistor T1 output tool positive temperature coefficient.Transistor seconds T2 is by tool just
The input current IB of temperature coefficient compensates the output electric current IC of transistor seconds T2.
Further illustrate the concrete start of radio-frequency power amplifier 400.Continue referring to Fig. 4, radio frequency merit
The bias circuit of rate amplifier 400 for determine this radio-frequency power amplifier 400 characteristic time very important because of
Son.Especially, the device such as Digital Cellular needs for the radio-frequency power amplifier 400 transmitted
High linearity, so that maintaining the high linearity of radio-frequency power amplifier 400 to become particularly important.In this reality
Executing in example, the first transistor T1, the first resistance R1, the second resistance R2 and the 3rd resistance R3 constitute institute
The bias circuit of meaning, to provide an input current IB to transistor seconds T2.The first crystal of vague and general type
Pipe T1 is biased in saturation region, and exports bias current ID to a first resistance R1.At node n1,
The bias current ID summation equal to earth current IR and input current IB, in one embodiment, the second electricity
The resistance value of resistance R2 and the 3rd resistance R3 is a kilohm grade (K Ω), and the resistance value of the first resistance R1
For ohm grade.Therefore, bias current ID substantially can be no better than input current IB.Additionally,
The base emitter voltage VBE that first voltage V1 is transistor seconds T2 of node n1, therefore the first voltage
V1 has the characteristic of negative temperature coefficient.Then, because the dividing potential drop that the second voltage V2 is the first voltage V1,
So the second voltage V2 has the characteristic of negative temperature coefficient.
In the present embodiment, the second voltage V2 feedback of tool negative temperature coefficient couples the first transistor T1's
Grid, therefore shown in the voltage of grid such as equation (1), wherein VG is the grid electricity of the first transistor T1
Pressure.
VG=[R3/ (R2+R3)] × VBE (1)
Furthermore, the source voltage of the first transistor T1 is that the first voltage V1 is multiplied by plus bias current ID
First resistance R1, as shown in equation (2), wherein VS is the source voltage of the first transistor T1.
VS=V1+ (ID × R1) (2)
=VBE+ (ID × R1)
Therefore, according to equation (1) with shown in (2), the gate-source voltage VGS of the first transistor T1 is as square
Shown in formula (3), and by the relational expression of bias current can be obtained after equation (3) arrangement, such as equation
Shown in formula (4).From equation (4), it is assumed that gate-source voltage VGS is convergence one at different temperatures
Individual fixed value, so by adjusting the second resistance R2 and the resistance value of the 3rd resistance R3, can make bias
Electric current ID becomes the electric current with ptc characteristics.Furthermore, in the present embodiment, because the second electricity
The resistance value of resistance R2 and the 3rd resistance R3 about 1 to 2 order of magnitude of resistance value more than the first resistance R1,
So bias current ID can be substantially equal to input current IB, and to export electric current IB also can be a tool
The electric current of positive temperature coefficient.Subsidiary one is mentioned that, in the present embodiment, designer can set according to circuit
Meter demand or practical application request adjust bias current ID's by the resistance value adjusting the first resistance R1
Current value.
VGS=-[(ID × R1)+VBE × (R2/ (R2+R3))] (3)
ID=[| VGS |-VBE × (R2/ (R2+R3))]/R1 (4)
It follows that owing to transistor seconds T2 is a bipolar junction transistor (BJT), so the second crystal
Shown in the relation such as equation (5) of the output electric current IC and input current IB of pipe T2, wherein β is electric current
Gain, has the characteristic of negative temperature coefficient.Due to transistor seconds T2 current gain (that is output electricity
Stream IC is divided by input current IB) it is negative temperature coefficient, therefore if it is desired that electric current IC must be exported for close to zero
The electric current of temperature coefficient, then known according to equation (4), must be by adjusting the resistance value of resistance R2 Yu R3
The electric current making input current IB be positive temperature coefficient.Just it should be noted that input current IB
The slope absolute value of temperature coefficient must be absolute close or equal to the slope of the negative temperature coefficient of current gain (β)
Value, consequently, it is possible to just can make output electric current IC have preferably temperature compensation effect.
IC=β×IB (5)
In order to better understand this disclosure, it is corresponding referring to Fig. 5 A～5C, Fig. 5 A～5C
The simulation curve figure of Fig. 4, the abscissa in this three figure all represents temperature and temperature range is all set to-40 DEG C extremely
+90℃.In fig. 5, ordinate represents bias current ID, Fig. 5 A and show through temperature-compensating
Bias current ID, along with the change of ambient temperature, the value of bias current ID can be along with the rising of temperature
Rise.In figure 5b, ordinate represents current gain (curve CV2) and input current IB (curve CV1),
Input current IB be temperature compensated after electric current, there is the characteristic of positive temperature coefficient, input current IB
Value can be incremented by along with the rising of temperature, and the value of current gain can be successively decreased along with the rising of temperature.
It should be noted that the slope absolute value of curve CV1 is closer to curve CV2 slope absolute value, then radio frequency
The temperature compensation effect of the output electric current IC of power amplifier 400 is the best.In figure 5 c, ordinate generation
Table output electric current IC (curve CV3), electric current IC is after temperature-compensating in output, it is possible to reach close to zero temperature
The characteristic of degree coefficient, that is, along with the change of temperature, output electric current IC still can keep stable, enter
And radio-frequency power amplifier 400 can export stable output, maintain the demand of high linearity.
Accordingly, on reality is applied, the radio-frequency power amplifier 400 of this disclosure has excellent temperature
Degree compensating effect so that the output of radio-frequency power amplifier 400 becomes relative to temperature with output electric current
Remain in that stable during change, and then maintain high linearity to be unlikely to allow amplification distorted signals.In other words,
Compared to existing skill, radio-frequency power amplifier 400 is in the face of, under the change of ambient temperature, ratio is less likely
Meet with the problem that any linearity significantly decays.
In application, output stage unit 350 can have more the first inductance L1, the first electric capacity C1 and the second electricity
Hold C2.One end of first electric capacity C1 couples the base stage of transistor seconds T2, and the other end couples radio frequency input
Signal RFIN.Between first inductance L1 coupling system voltage VCC and transistor seconds T2 collector.The
One end of two electric capacity C2 is coupled to the collector of transistor seconds T2, other end output radio frequency output signal
RFOUT。
When radio-frequency power amplifier 400 not yet starts to receive radio-frequency input signals RFIN, inductance L1 meeting
Direct current signal is presented low impedance state, such as short circuit, electric capacity C1, C2 then can to direct current signal in
Existing high impedance status, such as open circuit.When radio-frequency power amplifier 400 starts to receive radio-frequency input signals RFIN
Time, inductance L1 can present high impedance status to high-frequency signal, such as open circuit, and electric capacity C1, C2 then can
High-frequency signal is presented low impedance state, such as short circuit.Accordingly, radio-frequency power amplifier 400 can be
DC operation pattern operates smoothly with alternate current operation pattern.
(embodiment of electronic system)
Refer to the block diagram that Fig. 6, Fig. 6 are the electronic system according to the embodiment of the present invention.Electronics
System 600 includes radio-frequency power amplifier 610 and load 620.Radio-frequency power amplifier 610 receives radio frequency
Input signal RFIN and output radio frequency output signal RFOUT are to load 620, that is radio-frequency power amplifies
Device 610, after coupling system voltage with reference voltage, can provide a stable output to load 620.
Radio-frequency power amplifier 610 can be the power amplifier 300 and 400 in above-mentioned Fig. 3 Yu Fig. 4 embodiment
One of them, and in order to provide stable output to load.Electronic system 600 can be all kinds of
System in type electronic installation, electronic installation e.g. hand-held device or running gear etc..
(embodiment of the temperature compensation of radio-frequency power amplifier)
Refer to the flow chart that Fig. 7, Fig. 7 are the temperature compensation according to the embodiment of the present invention.This example
Described method can perform at the radio-frequency power amplifier shown in Fig. 3 or Fig. 4, the most in the lump according to figure
3 or Fig. 4 in order to understanding.The temperature compensation of radio-frequency power amplifier comprises the following steps: born by tool
The base emitter voltage of temperature coefficient is as the first voltage (step S710) in bias circuit.By the second voltage
Feeding back to bias current generation unit, wherein the second voltage is the dividing potential drop (step S720) of the first voltage.Produce
The input current (step S730) of raw tool positive temperature coefficient.Output electric current and input electricity when output stage unit
When ratio numerical constant between stream is negative temperature coefficient, the temperature coefficient of output electric current is substantially equal to zero-temperature coefficient
Coefficient.
About the correlative detail of each step of temperature compensation of radio-frequency power amplifier at above-mentioned Fig. 3～
Fig. 4 embodiment describes in detail, pardons not repeating at this.Should be noted that at this, Fig. 7 embodiment each
Step the most for convenience of description need, the embodiment of the present invention is not using each step order to each other as reality
Execute the restrictive condition of each embodiment of the present invention.
(possible effect of embodiment)
In sum, electronic system, radio-frequency power amplifier and the temperature thereof that the embodiment of the present invention is provided
Compensation method, using the teaching of the invention it is possible to provide excellent temperature compensation effect so that the output of power amplifier is with defeated
Remain in that stable when going out electric current relative to variations in temperature, and then maintain high linearity will not allow amplification signal
Distortion.In other words, compared to existing skill, the radio-frequency power amplifier of this disclosure is in the face of at ring
Under the change of border temperature, compare and do not suffer from the problem that any linearity significantly decays.
At least one embodiment in the multiple embodiment of this disclosure, the positive temperature coefficient of input current oblique
Rate absolute value must be close or equal to the slope absolute value of the negative temperature coefficient of current gain (β), consequently, it is possible to
Output electric current and output just can be made to have preferably temperature compensation effect.
The foregoing is only embodiments of the invention, it is also not used to limit to the Patent right requirement of the present invention
Scope.
Claims (9)
1. a radio-frequency power amplifier, in order to amplify a radio-frequency input signals, it is characterised in that this is penetrated
Frequently power amplifier includes:
Bias current generation unit, receives reference voltage；
First impedance unit, is electrically connected with bias current generation unit；
Second impedance unit, is electrically connected with this first impedance unit, this second impedance unit and this first resistance
There is between anti-unit the first voltage of negative temperature coefficient, and this second impedance unit receives ground connection electricity
Stream；
3rd impedance unit, is electrically connected with this second impedance unit, the 3rd impedance unit and this second resistance
Having the second voltage between anti-unit, this second voltage is the dividing potential drop of this first voltage, wherein this bias plasma
Stream generation unit is electrically connected between this second impedance unit and the 3rd impedance unit, this bias current
This second voltage of generation unit is with the bias current of output tool positive temperature coefficient；And
Output stage unit, is electrically connected between this first impedance unit and this second impedance unit, and this is defeated
Go out grade unit and receive input current,
Wherein this bias current adds this earth current, and the positive temperature of this input current tool equal to this input current
The characteristic of degree coefficient, the ratio numerical constant between output electric current and the input current of this output stage unit is negative
During temperature coefficient and this input current positive temperature coefficient slope absolute value close or equal to this ratio normal
During the slope absolute value of negative temperature coefficient of number, the temperature coefficient of this output electric current is substantially equal to zero-temperature coefficient
Coefficient.
2. radio-frequency power amplifier as claimed in claim 1, it is characterised in that this first voltage is by this
Output stage unit is provided.
3. radio-frequency power amplifier as claimed in claim 1, it is characterised in that this bias current produces
Unit includes:
The first transistor, its drain electrode couples this reference voltage, and its grid receives this second voltage, its source electrode
Export this bias current, this first transistor according to this second voltage with output tool positive temperature coefficient this is inclined
Current voltage,
Wherein this first transistor is depletion transistor.
4. the radio-frequency power amplifier as described in claim 3, it is characterised in that this first impedance list
Unit includes:
First resistance, its one end couples the source electrode of this first transistor, and the size of this bias current is according to being somebody's turn to do
The resistance value of the first resistance determines with this reference voltage.
5. radio-frequency power amplifier as claimed in claim 4, it is characterised in that this second impedance unit
Including:
Second resistance, its one end couples the other end of this first resistance, this second resistance and this first resistance
Between there is this first voltage of negative temperature coefficient, wherein one end of this second resistance receives this ground connection electricity
Stream.
6. radio-frequency power amplifier as claimed in claim 5, it is characterised in that the 3rd impedance unit
Including:
3rd resistance, its one end couples the other end of this second resistance, and its other end couples ground voltage,
There is between 3rd resistance and this second resistance this second voltage, and this second voltage is the first voltage
Dividing potential drop,
Wherein the grid of this first transistor couples between this second resistance and the 3rd resistance, and passes through
Adjust this second with the resistance value of the 3rd resistance so that this first transistor output tool positive temperature coefficient
This bias current.
7. radio-frequency power amplifier as claimed in claim 6, it is characterised in that this output stage unit bag
Include:
Transistor seconds, its base stage couples between this first resistance and this second resistance and receives this input electricity
Stream, its emitter-base bandgap grading couples this ground voltage, its collector coupling system voltage, wherein base of this transistor seconds
Emitter voltage is this first voltage, and this transistor seconds is by having this input current of positive temperature coefficient
To compensate the output electric current of this transistor seconds.
8. an electronic system, it is adaptable to radio communication, it is characterised in that this electronic system includes:
Radio-frequency power amplifier as claimed in claim 1, in order to stable output, this radio-frequency power
Amplifier receives radio-frequency input signals and output radio frequency output signal；And
Load, is electrically connected to this radio-frequency power amplifier, and this load is in order to receive this radio frequency output signal.
9. the temperature compensation of a radio-frequency power amplifier, it is characterised in that this temperature compensation
Including:
Using the base emitter voltage of tool negative temperature coefficient as the first voltage in bias circuit；
By the second Voltage Feedback to bias current generation unit, wherein this second voltage is this first voltage
Dividing potential drop；And
Produce the input current of tool positive temperature coefficient,
Wherein the ratio numerical constant between output electric current and this input current of output stage unit is negative temperature
During coefficient and this input current positive temperature coefficient slope absolute value close or equal to this than numerical constant
During the slope absolute value of negative temperature coefficient, the temperature coefficient of this output electric current is substantially equal to zero-temperature coefficient system
Number,
Wherein this temperature compensation is for radio-frequency power amplifier as claimed in claim 1 or such as right
Require the electronic system described in 8.
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| CN104935269B (en) * | 2015-07-12 | 2017-11-21 | 北京理工大学 | The temperature compensation and system of a kind of radio-frequency amplifier gain |
| TWI699963B (en) * | 2019-04-23 | 2020-07-21 | 立積電子股份有限公司 | Power amplifier and temperature compensation method for the power amplifier |
| CN114115414B (en) * | 2022-01-27 | 2022-04-12 | 成都市安比科技有限公司 | Independent linear voltage stabilizing circuit without operational amplifier structure |
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| CN1349309A (en) * | 2000-10-18 | 2002-05-15 | 深圳市中兴通讯股份有限公司 | Gain temperature compensator for transceiver |
| CN1395310A (en) * | 2001-07-04 | 2003-02-05 | 三星电子株式会社 | Internal power supply for IC with temp. compensating pedestal generator |
| CN102638230A (en) * | 2011-02-10 | 2012-08-15 | 启碁科技股份有限公司 | Temperature compensation device and satellite signal receiving system |
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| CN1349309A (en) * | 2000-10-18 | 2002-05-15 | 深圳市中兴通讯股份有限公司 | Gain temperature compensator for transceiver |
| CN1395310A (en) * | 2001-07-04 | 2003-02-05 | 三星电子株式会社 | Internal power supply for IC with temp. compensating pedestal generator |
| CN102638230A (en) * | 2011-02-10 | 2012-08-15 | 启碁科技股份有限公司 | Temperature compensation device and satellite signal receiving system |
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