CN103811589A - Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell - Google Patents
Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell Download PDFInfo
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- CN103811589A CN103811589A CN201410052413.4A CN201410052413A CN103811589A CN 103811589 A CN103811589 A CN 103811589A CN 201410052413 A CN201410052413 A CN 201410052413A CN 103811589 A CN103811589 A CN 103811589A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 19
- 238000002360 preparation method Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 6
- 238000000151 deposition Methods 0.000 abstract 3
- 239000002355 dual-layer Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 26
- 230000031700 light absorption Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005571 horizontal transmission Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method of light trapping structures on the front and back faces of a semiconductor film solar cell. The method comprises the following steps: 1, growing a layer of reflecting mirror on a glass substrate by sputtering; 2, depositing a layer of first metal nanoparticles on the reflecting mirror; 3, growing a first back electrode on the first metal nanoparticles; 4, depositing a layer of second metal nanoparticles on the first back electrode; 5, depositing a layer of second back electrode on the second metal nanoparticles; 6, growing a layer of film solar cell material on the second back electrode; 7, etching a two-dimensional grating structure on the upper surface of the film solar cell material; 8, growing a layer of front electrode on the two-dimensional grating structure to finish manufacturing. Incident light is scattered repeatedly by using a grating on the front surface and a dual-layer metal nanometer structure on the back face, thereby improving the acting effects of the incident light and transmission light.
Description
Technical field
The present invention relates to thin-film solar cells, a kind of light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces is particularly provided, the present invention combines traditional single light trapping structure the absorption increasing light, provides a kind of new approaches for improving solar battery efficiency.
Background technology
Solar cell power generation cost is compared very high with traditional firepower, hydroelectric power generation cost.Must improve the conversion efficiency of solar cell and reduce costs in order to improve the competitiveness of solar cell.As second generation solar cell, hull cell has reduced more than 90% than material that crystal silicon cell uses, and therefore cost significantly reduces.But because battery obsorbing layer is too thin, battery is abundant not to the absorption of light.Therefore, the light absorption of enhanced film battery is most important to improving conversion efficiency of solar cell.
The surperficial light trapping structure of tradition crystal silicon battery, except anti-reflection layer, is mainly to utilize acid and alkali corrosion to go out inverted pyramid structure, and its size is in 2-10 micrometer range.But general hull cell thickness is at 1-2 micrometer range, therefore inverted pyramid structure be not suitable for hull cell.Common hull cell reaches by being deposited on the effect that falls into light on the substrate of random surface texture.Because the sunken light of substrate surface texture is limited in one's ability, the more efficiently light trapping structure of hull cell is further developed: battery surface optical grating construction; Utilize photonic crystal to strengthen the light absorption of battery; Utilize the surface plasma near field humidification of metal nanoparticle to increase light absorption etc.Grating makes light produce high order diffraction to change the direction of propagation of light, makes light horizontal transmission in absorbed layer, thus the propagation path that has increased light increased that light is absorbed may.Photonic crystal is the nanostructure that refractive index cycle changes, and can reenter battery obsorbing layer with less angle through the light of photonic crystal diffraction, and low angle can prevent that light from fleeing from silicon, increases light and be absorbed and convert to the chance of photoelectric current.Utilize the principle of metal nanoparticle excitating surface plasma excimer enhanced film battery light absorption to be that incident light is subject to surface plasma effect, most of incident light enters in the medium that refractive index is larger (battery) being scattered.And stronger to scattering of light ability in the time that metal nanoparticle diameter is larger, in absorbed layer, light path extends greatly.
But, specific light trapping structure is more obvious for the light absorption enhancing effect of specific band above, due to the absorption spectra of semiconductor solar cell wider (such as the optical absorption spectra of crystal silicon solar energy battery is between 300nm1100nm), single light trapping structure is all incident lights of scattering effectively.The present invention proposes single light trapping structure to combine, and all has light trapping structure at front and back, forms the mixing light trapping structure that more broadband light is had to scattering process, has great importance for the light absorption that improves semiconductor thin-film solar cell.
Summary of the invention
The object of the invention is to, a kind of light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces is provided, it is the mixing light trapping structure that is different from traditional light trapping structure, utilize front surface grating and back side double-level-metal nanostructure to form Multiple Scattering effect to incident light, strengthen the action effect to incident light and transmitted light.Front surface grating mainly makes incident light wide-angle enter battery obsorbing layer, increases its propagation path, reduces reflection of light rate, and back side double-level-metal nano particle returns the transmission light-scattering layer of long wave direction to battery obsorbing layer, increases the absorption of this part light.
The light trapping structure preparation method who the invention provides a kind of semiconductor thin-film solar cell front and rear surfaces, comprises the following steps:
Step 1: in glass substrate by sputter one deck speculum of growing;
Step 2: deposit one deck the first metal nanoparticle on speculum;
Step 3: first back electrode of growing on the first metal nanoparticle;
Step 4: deposit again one deck the second metal nanoparticle on the first back electrode;
Step 5: deposit again one deck the second back electrode on the second metal nanoparticle;
Step 6: the thin film solar cell material of growing on the second back electrode;
Step 7: etch two-dimensional grating structure on the upper surface of thin-film solar cells material;
Step 8: electrode before the one deck of growing in two-dimensional grating structure, completes preparation.
The present invention compared with prior art, has following good effect:
1, because single light trapping structure just has and falls into preferably light effect at the light of specific band.The present invention falls into the parameter optimization of light and the sunken light of surface of metal particles plasma by adjusting optical grating construction, cycle, duty ratio etc., expanded the sphere of action of light trapping structure to light;
2,, due to single light trapping structure, two-dimensional grating structure and metal nanoparticle material are single, only the incident light of certain limit are worked.The present invention, by adjusting the kind of metal nanoparticle and optical grating construction, has expanded and has mixed the sphere of action of light trapping structure to incident light;
3, change parameter (cycle, duty ratio etc.) and the kind sphere of action of extended hybrid light trapping structure to incident light greatly of mixing light trapping structure simultaneously.
Accompanying drawing explanation
For making object of the present invention, content, advantage clearer, be elaborated below with reference to accompanying drawings in conjunction with the embodiments, wherein:
Fig. 1 is manufacture method flow chart of the present invention;
Fig. 2 is structural representation of the present invention.
Embodiment
Refer to shown in Fig. 1 to Fig. 2, the invention provides a kind of light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces, comprise the following steps:
Step 1: by the sputter one deck speculum 2 of growing, the material of described speculum 2 is Ag or Al in glass substrate 1, and the thickness of this speculum 2 is 50nm-150nm;
Step 2: deposit one deck the first metal nanoparticle 3 on speculum 2;
Step 3: first back electrode 4 of growing on the first metal nanoparticle 3;
Step 4: deposit again one deck the second metal nanoparticle 5 on the first back electrode 4;
The material of first, second wherein said metal nanoparticle 3,5 is Ag, Au, Cu or Al, diameter is 100nm mono-300nm, cycle is 600nm mono-1200nm, this metal nanoparticle can form surface plasma under the exciting of incident light, the sunlight directional scattering transmitting from battery is returned to battery obsorbing layer, in the time that metallic particles is larger, its scattering power is greater than surface plasma effect to the enhancing effect of light absorption;
Step 5: deposit again one deck the second back electrode 6 on the second metal nanoparticle 5;
The material of first, second wherein said back electrode 4,6 is AZO, thickness is 50nm250nm, this two-layer back electrode is except being used as electrode, also be used for stoping speculum 2, first, second metal nanoparticle 3 and 5 diffusions to battery obsorbing layer, the recombination rate of reduction solar cell surface photo-generated carrier;
Step 6: the thin film solar cell material 7 of growing on the second back electrode 6;
Step 7: etch two-dimensional grating structure 9 on the upper surface of thin-film solar cells material 7, the grating cycle of described two-dimensional grating structure 9 is 400nm800nm, thickness is 50nm500nm, nano-pillar diameter is 50nm600nm, two-dimensional grating structure 9 objects are the feature weak for hull cell light absorption, scatter incident light, strengthens the propagation path of light in absorbed layer, thereby increases light absorption;
Step 8: electrode 10 before the one deck of growing in two-dimensional grating structure 9, before described solar cell, the material of electrode 10 is ITO, thickness is 50nm mono-150nm, completes preparation.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included in protection scope of the present invention.
Claims (6)
1. a light trapping structure preparation method for semiconductor thin-film solar cell front and rear surfaces, comprises the following steps:
Step 1: in glass substrate by sputter one deck speculum of growing;
Step 2: deposit one deck the first metal nanoparticle on speculum;
Step 3: first back electrode of growing on the first metal nanoparticle;
Step 4: deposit again one deck the second metal nanoparticle on the first back electrode;
Step 5: deposit again one deck the second back electrode on the second metal nanoparticle;
Step 6: the thin film solar cell material of growing on the second back electrode;
Step 7: etch two-dimensional grating structure on the upper surface of thin-film solar cells material;
Step 8: electrode before the one deck of growing in two-dimensional grating structure, completes preparation.
2. the light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces according to claim 1, the material of wherein said speculum is Ag or Al, the thickness of this speculum is 50nm-250nm.
3. the light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces according to claim 1, the material of first, second wherein said metal nanoparticle is Ag, Au, Cu or Al, diameter is 100nm mono-300nm, and the cycle is 600nm-1200nm.
4. the light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces according to claim 1, the material of first, second wherein said back electrode is AZO, thickness is 50nm mono-250nm.
5. the light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces according to claim 1, the grating cycle of wherein said two-dimensional grating structure is 400nm mono-800nm, thickness is 50nm mono-500nm.
6. the light trapping structure preparation method of semiconductor thin-film solar cell front and rear surfaces according to claim 1, before wherein said solar cell, the material of electrode is ITO, thickness is 50nm150nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410052413.4A CN103811589A (en) | 2014-02-17 | 2014-02-17 | Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell |
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| CN201410052413.4A CN103811589A (en) | 2014-02-17 | 2014-02-17 | Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576839A (en) * | 2014-12-19 | 2015-04-29 | 夏景 | Design method of high-efficiency thin-film solar photovoltaic panel |
| CN106129255A (en) * | 2016-08-25 | 2016-11-16 | 太原理工大学 | Organic solar batteries based on extra small cycle silver nanometer column array and preparation method |
| CN108807689A (en) * | 2018-06-27 | 2018-11-13 | 集美大学 | A kind of perovskite solar cell and preparation method thereof containing composite Nano grating |
| CN109360894A (en) * | 2018-11-22 | 2019-02-19 | 集美大学 | Perovskite battery and preparation method thereof of the nanostructure in cathode grating high spot |
| CN109962122A (en) * | 2017-12-22 | 2019-07-02 | 北京铂阳顶荣光伏科技有限公司 | Thin-film solar cells and preparation method thereof |
| CN110854217A (en) * | 2019-11-28 | 2020-02-28 | 电子科技大学中山学院 | Solar cell for enhancing effective optical path of incident light |
| CN112635609A (en) * | 2021-01-25 | 2021-04-09 | 苏州迈为科技股份有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
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| CN103219411A (en) * | 2013-04-09 | 2013-07-24 | 中国科学院半导体研究所 | Solar battery with composite light-trapping structure of nanopores and metal particles and preparation method |
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2014
- 2014-02-17 CN CN201410052413.4A patent/CN103811589A/en active Pending
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| XIANQIN MENG, EMMANUEL DROUARD ET AL.: "Combined front and back diffraction gratings for broad band light trapping in thin film solar cell", 《OPTICS EXPRESS》, vol. 20, no. 5, 5 July 2012 (2012-07-05) * |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576839A (en) * | 2014-12-19 | 2015-04-29 | 夏景 | Design method of high-efficiency thin-film solar photovoltaic panel |
| CN106129255A (en) * | 2016-08-25 | 2016-11-16 | 太原理工大学 | Organic solar batteries based on extra small cycle silver nanometer column array and preparation method |
| CN106129255B (en) * | 2016-08-25 | 2018-08-17 | 太原理工大学 | Organic solar batteries and preparation method based on extra small period silver nanometer column array |
| CN109962122A (en) * | 2017-12-22 | 2019-07-02 | 北京铂阳顶荣光伏科技有限公司 | Thin-film solar cells and preparation method thereof |
| CN108807689A (en) * | 2018-06-27 | 2018-11-13 | 集美大学 | A kind of perovskite solar cell and preparation method thereof containing composite Nano grating |
| CN109360894A (en) * | 2018-11-22 | 2019-02-19 | 集美大学 | Perovskite battery and preparation method thereof of the nanostructure in cathode grating high spot |
| CN109360894B (en) * | 2018-11-22 | 2022-07-29 | 集美大学 | Perovskite battery with nano structure at cathode grating bulge and preparation method thereof |
| CN110854217A (en) * | 2019-11-28 | 2020-02-28 | 电子科技大学中山学院 | Solar cell for enhancing effective optical path of incident light |
| CN112635609A (en) * | 2021-01-25 | 2021-04-09 | 苏州迈为科技股份有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
| CN112635609B (en) * | 2021-01-25 | 2023-03-14 | 苏州迈为科技股份有限公司 | Silicon-based heterojunction solar cell and preparation method thereof |
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Application publication date: 20140521 |