CN103811066B - The method for deleting of nonvolatile storage and system - Google Patents
The method for deleting of nonvolatile storage and system Download PDFInfo
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- CN103811066B CN103811066B CN201210460971.5A CN201210460971A CN103811066B CN 103811066 B CN103811066 B CN 103811066B CN 201210460971 A CN201210460971 A CN 201210460971A CN 103811066 B CN103811066 B CN 103811066B
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Abstract
The invention provides the method for deleting of a kind of nonvolatile storage, including: receive erasing operational order；Judge that the threshold voltage of memory element to be erased is the most normal, if, then all memory element to be erased are carried out normal preprogrammed operation, otherwise, then memory element abnormal to threshold voltage carries out initial preprogrammed operation, until after the threshold voltage of all memory element to be erased is normal, all memory element to be erased being carried out normal preprogrammed operation, the program voltage of initial preprogrammed operation is less than the program voltage of normal preprogrammed operation；Memory element after pre-programmed is carried out erasing operation；Whether there is erasing memory element after checking erasing operation, the most then repair memory element, otherwise, then end operation.Present invention also offers the erasing system of a kind of non-volatile memory realizing preceding method.The method for deleting of the nonvolatile storage of the present invention and system, it is possible to avoid being likely to cause leakage current because of powered-off fault.
Description
Technical field
The present invention relates to semiconductor memory technologies field, particularly relate to a kind of nonvolatile storage
Method for deleting and system.
Background technology
Memorizer also exists two kinds of basic units of storage, erasing memory element (erase cell) and programming
Memory element (program cell), namely " 1 " and " 0 ", therefore correspondence also exists for erasing and compiles
The basic operation of journey both memory cells.Wherein, " 0 " is become the process of " 1 ", be referred to as wiping
Remove；Otherwise it is referred to as programming.
Traditional memorizer erasing principle is as follows: first to needing to carry out the target logic block of erasing operation
(block) Pre_PGM(pre-programmed is carried out) operation, it is therefore an objective to all of memory element is all programmed
For same " 0 " state storage unit, namely threshold state.Whether Pre_PGM operation completes
Basis for estimation is whether all cell verify (programming checking) by PV.After PV is verified, knot
Bundle Pre_PGM operation, enters erase pulse(erasing pulse) start erasing operation.First erasing
Pulse arrives, and the storage to having been carried out Pre_PGM is wiped.And then OEV1(mistake is carried out
Erasing checking) operation, it is therefore an objective to crossed the threshold value that erases deposited less than " 1 " of 0V that may be present
Storage unit carries out the most weak programming, shifts its threshold value onto 0V more than.Next step is EV(erasing
Checking) operation, if but, the most again to wipe, second erasing pulse arrives, and so circulates
Back and forth, until EV by or erase counter reach maximum number, then jump out circulation, carry out OEV2
Operation.OEV2 with OEV1 is similar, it is therefore an objective to raise the threshold value of " 1 " memory element further to disappear
Except subthreshold conduction leaks electricity.So far, the operation of the erasing to object block is completed.
In the actual application of aforementioned memory erasing, it is frequently encountered by the situation of unexpected powered-off fault.If
Power down is to occur in erase process, then it is possible to the threshold value excessively erased in a large number can be there is be less than 0
Erasing memory element, this is the correction owing to having not enough time to carry out OEV1, OEV2, or enters
When row is revised, power down causes.Then, carrying out erasing operation when again powering on, these are crossed and erase
, bigger leakage current will be there is when Pre_PGM in a large amount of threshold values erasing memory element less than 0, this
Not only can affect the speed of Pre_PGM, even can destroy time serious provides the drain of program current
Pump, causes Pre_PGM to complete, thus cannot proceed erasing operation.
Summary of the invention
The present invention provides method for deleting and the system of a kind of nonvolatile storage, it is possible to solve because extremely falling
Electricity and be likely to cause the hidden danger of leakage current.
In order to solve the problems referred to above, the invention discloses the method for deleting of a kind of nonvolatile storage, including
Following steps:
Receive erasing operational order；
Pre-programmed module judges that the threshold voltage of memory element to be erased is the most normal, the most then to institute
Memory element to be erased is had to carry out normal preprogrammed operation, otherwise, then deposit threshold voltage is abnormal
Storage unit carries out initial preprogrammed operation, until the threshold voltage of all memory element to be erased is normal
After, all memory element to be erased are carried out normal preprogrammed operation, described initial preprogrammed operation
Program voltage is less than the program voltage of normal preprogrammed operation；
Erasing module carries out erasing operation to the memory element after pre-programmed；
Whether there is erasing memory element after crossing the erasing operation of erasing module verification, the most then repair institute
State memory element, otherwise, then end operation.
Further, the described threshold voltage judging memory element to be erased the most normally includes:
Judge whether the threshold voltage of memory element to be erased is less than target threshold voltage, if it is not, the most just
Often, otherwise, the most abnormal.
Further, the value of described target threshold voltage is:
The minima of the regular threshold voltage scope under normal erasing state.
Further, the value of described target threshold voltage is:
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value.
Further, the value of described target threshold voltage is:
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value is plus elasticity number, and described elasticity number span is between 0.1V to 0.2V.
Further, the value of described target threshold voltage is 0.4V or 0.6V.
Further, whether the described threshold voltage judging memory element includes less than target threshold voltage:
Selecting a reference memory unit, the threshold voltage of described reference memory unit is targets threshold electricity
Pressure, and apply a reference voltage to the wordline of this reference memory unit, it is thus achieved that predetermined reference current.
Apply a positive voltage to the wordline of each memory element to be verified, draw this memory element to be verified
In measurement electric current, wherein, the value of the reference voltage that the value wordline of this positive voltage applies is identical.
Comparison reference electric current and measurement electric current, if measuring electric current more than reference current, the then threshold of memory element
Threshold voltage is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
Further, the program voltage of described initial preprogrammed operation is according to the abnormal storage of threshold voltage
Unit current threshold voltage and target threshold voltage determine.
The invention also discloses the erasing system of a kind of nonvolatile storage, including:
Command reception module, is used for receiving erasing operational order；
Pre-programmed module is the most normal, if so, for judging the threshold voltage of memory element to be erased
Then all memory element to be erased are carried out normal preprogrammed operation；Otherwise, then to threshold voltage the most just
Normal memory element carries out initial preprogrammed operation, until the threshold voltage of all memory element to be erased
After Zheng Chang, all memory element to be erased carrying out normal preprogrammed operation, described initial pre-programmed is grasped
The program voltage made is less than the program voltage of normal preprogrammed operation；
Erasing module, for carrying out erasing operation to memory element to be erased；
Crossing erasing authentication module, whether the memory element after verifying erasing existed erasing, if so,
Then repair the described memory element crossing erasing, otherwise, then end operation.
Further, described pre-programmed module includes:
Judge submodule, for judging that whether the threshold voltage of memory element to be erased is less than targets threshold
Voltage, if it is not, then normal, otherwise, the most abnormal.
Further, described pre-programmed module includes that target threshold voltage sets submodule, is used for setting mesh
Mark threshold voltage, described target threshold voltage determines according at least one mode following:
The normal minima wiping state lower threshold voltages scope；
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value；
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value is plus elasticity number, and described elasticity number span is between 0.1V to 0.2V.
Further, described pre-programmed module includes:
Initial programming voltage determines module, for according to threshold voltage abnormal memory element present threshold value
Voltage and target threshold voltage determine the program voltage of initial preprogrammed operation.
Compared with prior art, the present invention includes advantages below:
The method for deleting of the nonvolatile storage of the present invention and system by change pre-programmed module for
The handling process of memory element to be erased, is divided into one step completed preprogrammed operation originally and initially prelisting
Journey operation and normal preprogrammed operation are carried out for twice.Initial preprogrammed operation is for improving because of powered-off fault
And the threshold voltage of abnormal memory element occur, until the threshold voltage of all memory element is all in just
After in the range of Chang, then carry out normal preprogrammed operation.Because the programming that initial preprogrammed operation is applied
Voltage is relatively weak, can avoid directly applying stronger program voltage and leakage occurs in the memory element that causes
The situation of electric current, thus the hidden danger eliminating powered-off fault and bringing, it is ensured that whole erase process suitable
Profit completes.Normal preprogrammed operation is carried out again, even if normally prelisting after initial preprogrammed operation reparation
The program voltage that journey operation is applied is the strongest, it is also possible to avoid memory element leakage current occur.
It addition, during whole, although preprogrammed operation be divide into twice and carry out, but be because two
The program voltage differing only in applying of secondary operation is different, and therefore, initial preprogrammed operation is pre-with normal
Programming operation can be realized by pre-programmed module, is realizing having only to the control of change pre-programmed module
Logic processed, it is ensured that the threshold voltage of all memory element is all in carrying out normal program behaviour after normal condition again
, it is not necessary to change or increase the hardware configuration of memorizer, it can thus be avoided because memorizer
Hardware configuration change and increase cost.
Accompanying drawing explanation
Fig. 1 is the flow chart of the method for deleting embodiment one of the nonvolatile storage of the present invention；
Fig. 2 is the flow chart of the method for deleting example of the nonvolatile storage of the present invention；
Fig. 3 is the structural representation of the erasing system embodiment one of the nonvolatile storage of the present invention.
Detailed description of the invention
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The present invention is further detailed explanation with detailed description of the invention.
For making those skilled in the art be more fully understood that the present invention, the most simply introduce non-volatile memory
The principle of compositionality of device.
The core of nonvolatile storage is storage array, and storage array is made up of memory element (cell).
It is said that in general, a cell can include source electrode (source, S), drain (drain, D), control
Grid (control gate, CG), and floating grid (floating gate, FG).Control gate
CG can be used for meeting voltage VG.If VG is the positive voltage of sufficient intensity, then floating grid FG and raceway groove
Between can produce tunneling effect or channel hot electron effect, make electronics inject floating grid FG, thus lead
Causing cell threshold voltage to rise, threshold voltage rises to the most i.e. represent and is stored in data 0, i.e. programs
Operation；Erasing then adds the positive voltage of sufficient intensity at undercoat, utilizes between raceway groove and floating grid FG
Tunneling effect, the electronics on floating grid FG is attracted to substrate, thus causes cell threshold voltage
Reducing, threshold voltage is reduced to the most i.e. represent and is stored in data 1, and this is erasing.
At the beginning of the preprogrammed operation (Pre_PGM) of existing erase process is predominantly divided into by the present invention
Beginning preprogrammed operation and normal preprogrammed operation.Initial preprogrammed operation refers to execute when programming operation
Add more weak program voltage, i.e. less than program voltage during normal program operation.Normal pre-programmed behaviour
Making then identical with the preprogrammed operation of existing erase process, its program voltage applied is also with existing
The program voltage that the preprogrammed operation of some erase process applies is identical.Initial preprogrammed operation is main
It is for causing the abnormal memory element to be erased of threshold voltage because of powered-off fault, passing through
Apply more weak program voltage and improve the threshold voltage of these memory element, to be erased
The threshold voltage of memory element is in normal range, can avoid when carrying out normal preprogrammed operation
Applying stronger program voltage causes memory element to there is leakage current, thus eliminates because of powered-off fault
And the hidden danger brought.
With reference to Fig. 1, it is shown that the method for deleting embodiment one of a kind of nonvolatile storage of the present invention, bag
Include following steps:
Step 101, receives erasing operational order.
Step 102, pre-programmed module judges that the threshold voltage of memory element to be erased is the most normal,
The most all memory element to be erased are carried out normal preprogrammed operation, otherwise, then to threshold
The abnormal memory element of threshold voltage carries out initial preprogrammed operation, until all storages to be erased
After the threshold voltage of unit is normal, all memory element to be erased are carried out normal preprogrammed operation,
The program voltage of described initial preprogrammed operation is less than the program voltage of normal preprogrammed operation.
Whether the threshold voltage of memory element judges normal through following manner: judge to be erased
Whether the threshold voltage of memory element is less than target threshold voltage, if it is not, then normal, otherwise, then
Abnormal.Whether the threshold voltage of memory element is less than target threshold voltage is i.e. to be to memory element
The no judgement being in erasing state.Target threshold voltage is to meet normal erasing in a technological process
The minima of state lower threshold voltages scope.Such as, by belonged to erasing category " less than 0 or lean on
Near nearly 0 " adjusting thresholds to the threshold voltage size meeting normal erasing of " more than 0.5V ", then
This 0.5V is target threshold voltage.
Preferably, because the present invention is in order to avoid memory element occurs when carrying out normal preprogrammed operation
Leakage current, even if i.e. referring to that the grounded-grid of memory element also has electric current and exists, in order to avoid this feelings
Condition, can realize by raising the threshold voltage of memory element.Namely use initial pre-programmed to grasp
The mode made improves the threshold voltage of memory element.
In general theory, it is to avoid the threshold voltage of leakage current depends in more than 0.4V, reality
In the test result of product, but typically will not be poor with 0.4V too many.If arranging more than 0.4V, permissible
Preferably avoid leakage current, but number of times and the time of initial preprogrammed operation can be increased, thus shadow
Ringing speed, therefore the value of threshold voltage can not be the biggest.Therefore, the value of target threshold voltage
Following standard can be used further: choose in the range of meeting normal erasing state lower threshold voltages
Can avoid producing the minima of the threshold voltage ranges of leakage current.It is highly preferred that in order to ensure to keep away
Exempting from the effect of leakage current, the value of target threshold voltage can also be for producing leakage current avoiding
Plus an elasticity number on the basis of little value, elasticity number typically between 0.1V-0.2V, such as 0.1V
Or 0.2V etc..The general value of target threshold voltage value of the present invention is 0.4V or 0.6V etc..
Memory element abnormal to threshold voltage carries out initial preprogrammed operation, detailed process be
The grid of these memory element applies initial programming voltage.The purpose of initial preprogrammed operation is to improve
Cause the threshold voltage of the abnormal memory element of threshold voltage because of situations such as powered-off faults, make
It returns to normal condition, i.e. more than or equal to target threshold voltage.Therefore, initial pre-programmed
The program voltage that operation uses according to the current threshold voltage of the abnormal memory element of threshold voltage and
Target threshold voltage determines.
Concrete, because memory element threshold of appearance threshold voltage is abnormal is because the situations such as powered-off fault
And cause, during this, even if the threshold voltage of memory element is abnormal, also it is minimum width
The deviation normal condition of degree, in conjunction with the span of preceding aim threshold voltage, it may be determined that just
In beginning preprogrammed operation, the threshold voltage of memory element is brought up to target threshold voltage, apply one
Individual more weak program voltage can realize.As long as the threshold voltage of memory element just can be brought up to
Often in threshold voltage ranges.
Preferably, because threshold voltage is abnormal to be deposited for causing because of situations such as powered-off faults
Storage unit, its threshold voltage ranges is usually a more fixing scope, does not haves bigger
Fluctuation.According to described above, for general memory element, its target threshold voltage is also
One more fixing scope.Therefore, for streamline operation, initial preprogrammed operation is executed
The more weak program voltage added can use fixed value, i.e. all uses this solid for any memory element
Fixed program voltage.In actual process, can be real with concrete by substantial amounts of experimental verification
Test the concrete numerical value of the mode of the data program voltage to determine initial preprogrammed operation and applied.?
In the present invention, the general voltage using about 0v to 2v is used as the programming of initial preprogrammed operation
Voltage.
It addition, judge whether the threshold voltage of memory element can use as follows less than target threshold voltage
Step:
Selecting a reference memory unit, the threshold voltage of described reference memory unit is targets threshold
Voltage, and apply a reference voltage to the wordline of this reference memory unit, it is thus achieved that predetermined reference
Electric current.
Apply a positive voltage to the wordline of each memory element to be verified, draw this storage to be verified
Measurement electric current in unit, wherein, the value of the reference voltage that the value wordline of this positive voltage applies is identical.
Comparison reference electric current and measurement electric current, if measuring electric current more than reference current, then memory element
Threshold voltage less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
Wherein, the reference voltage being applied in the wordline of reference memory unit can be according to required ginseng
The threshold voltage examining electric current and reference memory unit determines.Required reference current value by many-sided because of
Element determines, such as SA resolving accuracy, power consumption requirements, rate request etc. determine, is specifically dependent upon each
The spec requirement of money product, along with the progress of technology, this value is typically between 10uA～20uA at present.
Such as, if the target threshold voltage of reference memory unit is 1V, predetermined reference current is 10 μ
A, then for current reference memory unit, can if reference voltage is set to 4V
Obtain the electric current of 10 μ A, then reference voltage is then set to 4V.The size of reference voltage selects
Individual compromise, the least if, for target threshold voltage, possibly cannot produce enough electric currents；
If too big, memory cell may be made again to be affected by programming effect.State-of-the-art
Under, typically at about 5V.
If the threshold voltage of memory element is more than or equal to target threshold voltage, then explanation storage is single
Unit is in wiping normally state, it is not necessary to repairs, then can directly carry out normal preprogrammed operation.
Normal preprogrammed operation is identical with the process of existing preprogrammed operation, its program voltage applied
Determining that mode is also identical with the process of existing preprogrammed operation, concrete preprogrammed operation process is at this
No longer describe in detail.
Step 103, erasing module carries out erasing operation to the memory element after pre-programmed.
Whether step 104, existed erasing memory element after crossing the erasing operation of erasing module verification, if
It is then to repair described memory element, otherwise, then end operation.
Whether there is erasing memory element after crossing the checking erasing operation of erasing authentication module, can adopt
With once crossing erasing checking, it would however also be possible to employ secondary is crossed the mode of erasing checking and carried out.Once cross wiping
Except checking i.e. refers to, when checking existed erasing memory element, these memory element are applied one
Program voltage carries out the threshold voltage repairing operation to improve memory element.Secondary crosses erasing checking i.e.
Refer to, repair process is divided into twice programming operation, i.e. on the basis of aforementioned once mistake erasing checking
Be further added by once crossing erasing checking, follow-up cross erasing checking mainly to front once cross erasing checking after
The most relatively low memory element of threshold voltage is carried out.Because, due to the wiping through stronger erased conditions
Division operation, can cause the threshold voltage distribution range of memory element in logical block very wide, some storage
The threshold voltage of unit is too low, even below 0V.In this case, even if wiping by once crossing
Except the programming operation in checking, the most also have the threshold voltage of partial memory cell less than 0V, nothing
Method returns to wipe normally state.To this end, be further added by once crossing erasing checking, then by executing
Add more weak program voltage, these memory element are repaired, it is ensured that cross erasing checking
Accuracy.
With reference to Fig. 2, it is shown that one instantiation flow process of the method for deleting of the nonvolatile storage of the present invention
Figure.Crossing erasing checking is divided into two steps to carry out, and the most initial mistake wipes checking (OEV1) and secondary
Cross erasing checking (OEV2).
First, to needing the memory element carrying out the object block of erasing operation to carry out preprogrammed operation
(Pre_PGM), wherein, it is necessary first to judge whether the abnormal memory element of threshold voltage,
The most then carry out initial preprogrammed operation (Pre_PGM1) until after all memory element are all normal again
Carry out normal preprogrammed operation (Pre_PGM2), otherwise, then can directly carry out normal preprogrammed operation.
Then, erasing operation (ERASE) is carried out, when first erasing pulse is taken to when, to
Erasing operation was carried out through carrying out the memory element of preprogrammed operation.
Then, carry out initially crossing erasing checking (OEV1), to the threshold voltage crossing erasing that may be present
Memory element less than 0V carries out the most weak programming, and its threshold voltage is brought up to more than 0V.
Then carry out wiping verification operation (EV), it is judged that whether memory element passes through erasing, if it is not, the most again
Return erasing operation.So move in circles, until being verified or erasing times (erase by erasing
Counter) reaching maximum, initial erasing checking excessively terminates.
Finally, carrying out secondary and cross erasing checking (OEV2), secondary crosses the specific practice of erasing checking with just
The process beginning to wipe checking is similar to, it is therefore an objective to raised the threshold voltage that the storage of erasing is simple eye further
To eliminate subthreshold voltage conducting electric leakage.
So far, the operation of the erasing to target logic block is completed.
With reference to Fig. 3, it is shown that the erasing system embodiment of the nonvolatile storage of the present invention, connect including instruction
Receive module 10, pre-programmed module 20, erasing module 30 and cross erasing authentication module 40.
Command reception module 10, is used for receiving erasing operational order.
Pre-programmed module 20, the most normal for judging the threshold voltage of memory element to be erased,
The most all memory element to be erased are carried out normal preprogrammed operation；Otherwise, then to threshold
The abnormal memory element of threshold voltage carries out initial preprogrammed operation, until all storages to be erased
After the threshold voltage of unit is normal, all memory element to be erased are carried out normal preprogrammed operation,
The program voltage of described initial preprogrammed operation is less than the program voltage of normal preprogrammed operation.Preferably
Ground, pre-programmed module includes judging submodule, for judging the threshold value electricity of memory element to be erased
Whether pressure is less than target threshold voltage, if it is not, then normal, otherwise, the most abnormal.
Further, pre-programmed module also includes that target threshold voltage sets submodule, is used for setting mesh
Mark threshold voltage, described target threshold voltage determines according at least one mode following:
The normal minima wiping state lower threshold voltages scope；
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value；
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value is plus elasticity number, and described elasticity number span is between 0.1V to 0.2V.
Further, this pre-programmed module also includes that initial programming voltage determines module, for according to threshold
Threshold voltage abnormal memory element current threshold voltage and target threshold voltage determine that initial pre-programmed is grasped
The program voltage made.
Erasing module 30, for carrying out erasing operation to memory element to be erased.
Crossing erasing authentication module 40, whether the memory element after verifying erasing existed erasing,
The most then repair the described memory element crossing erasing, otherwise, then end operation.
The erasing system of the nonvolatile storage of the present invention by change pre-programmed module for be erased
The handling process of memory element, one step completed preprogrammed operation originally is divided into initial preprogrammed operation
Carry out for twice with normal preprogrammed operation.Initial preprogrammed operation occurs because of powered-off fault for improving
The threshold voltage of abnormal memory element, until the threshold voltage of all memory element is all in normal range
After Nei, then carry out normal preprogrammed operation.Because the program voltage phase that initial preprogrammed operation is applied
To more weak, can avoid directly applying stronger program voltage and leakage current occurs in the memory element that causes
Situation.Normal preprogrammed operation is carried out again after initial preprogrammed operation reparation, though normal pre-programmed
The program voltage that operation is applied is the strongest, it is also possible to avoid memory element leakage current occur.
It addition, during whole, although preprogrammed operation be divide into twice and carry out, but be because two
The program voltage differing only in applying of secondary operation is different, and therefore, initial preprogrammed operation is pre-with normal
Programming operation can be realized by pre-programmed module, it is only necessary to the control changing pre-programmed module is patrolled
Volume, it is ensured that the threshold voltage of all memory element is all in carrying out normal program operation after normal condition more i.e.
Can, it is not necessary to change or increase the hardware configuration of memorizer, it can thus be avoided because memorizer hard
Part structural modification and increase cost.
Each embodiment in this specification all uses the mode gone forward one by one to describe, and each embodiment emphasis is said
Bright is all the difference with other embodiments, and between each embodiment, identical similar part is mutual
See mutually.For system embodiment, due to itself and embodiment of the method basic simlarity, institute
Fairly simple with describe, relevant part sees the part of embodiment of the method and illustrates.
Method for deleting and system to nonvolatile storage provided by the present invention have been carried out in detail above
Introducing, principle and the embodiment of the present invention are set forth by specific case used herein,
The explanation of above example is only intended to help to understand method and the core concept thereof of the present invention；Meanwhile,
For one of ordinary skill in the art, according to the thought of the present invention, in detailed description of the invention and should
All will change with in scope, in sum, this specification content should not be construed as this
Bright restriction.
Claims (9)
1. the method for deleting of a nonvolatile storage, it is characterised in that comprise the following steps:
Receive erasing operational order；
Pre-programmed module judges that the threshold voltage of memory element to be erased is the most normal, the most right
All memory element to be erased carry out normal preprogrammed operation, otherwise, then to threshold voltage the most just
Normal memory element carries out initial preprogrammed operation, until the threshold value of all memory element to be erased
After voltage is normal, all memory element to be erased are carried out normal preprogrammed operation, described initially
The program voltage of preprogrammed operation is less than the program voltage of normal preprogrammed operation；
Erasing module carries out erasing operation to the memory element after pre-programmed；
Whether there is erasing memory element after crossing the erasing operation of erasing module verification, the most then repaired
Described memory element, otherwise, then end operation；
The described threshold voltage judging memory element to be erased the most normally includes: judge to be erased
Whether the threshold voltage of memory element is less than target threshold voltage, if it is not, then normal, otherwise, then
Abnormal；Wherein, the value of described target threshold voltage is: avoid memory element in normal pre-programmed
The minima of threshold voltage ranges of leakage current is produced plus elasticity number, described elasticity number value model during operation
Between enclosing for 0.1V to 0.2V.
2. the method for deleting of nonvolatile storage as claimed in claim 1, it is characterised in that described
The value of target threshold voltage is:
The minima of the regular threshold voltage scope under normal erasing state.
3. the method for deleting of nonvolatile storage as claimed in claim 1, it is characterised in that described
The value of target threshold voltage is:
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value.
4. the method for deleting of nonvolatile storage as claimed in claim 1, it is characterised in that described
The value of target threshold voltage is 0.4V or 0.6V.
5. the method for deleting of nonvolatile storage as claimed in claim 1, it is characterised in that described
Judge whether the threshold voltage of memory element includes less than target threshold voltage:
Selecting a reference memory unit, the threshold voltage of described reference memory unit is targets threshold
Voltage, and apply a reference voltage to the wordline of this reference memory unit, it is thus achieved that predetermined reference
Electric current；
Apply a positive voltage to the wordline of each memory element to be verified, draw this storage to be verified
Measurement electric current in unit, wherein, the value of the reference voltage that the value wordline of this positive voltage applies is identical；
Comparison reference electric current and measure electric current, if measure electric current more than reference current, then memory element
Threshold voltage is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
6. the method for deleting of the nonvolatile storage as described in any one of claim 1 to 5, its feature
Being, the program voltage of described initial preprogrammed operation is current according to the abnormal memory element of threshold voltage
Threshold voltage and target threshold voltage determine.
7. the erasing system of a nonvolatile storage, it is characterised in that including:
Command reception module, is used for receiving erasing operational order；
Pre-programmed module, the most normal for judging the threshold voltage of memory element to be erased, if
It is then all memory element to be erased to be carried out normal preprogrammed operation；Otherwise, then to threshold value
The abnormal memory element of voltage carries out initial preprogrammed operation, until all storage lists to be erased
After the threshold voltage of unit is normal, all memory element to be erased are carried out normal preprogrammed operation,
The program voltage of described initial preprogrammed operation is less than the program voltage of normal preprogrammed operation；
Erasing module, for carrying out erasing operation to memory element to be erased；
Crossing erasing authentication module, whether the memory element after verifying erasing existed erasing, if
It is then to repair the described memory element crossing erasing, otherwise, then end operation；
Described pre-programmed module includes: judge submodule, for judging memory element to be erased
Whether threshold voltage is less than target threshold voltage, if it is not, then normal, otherwise, the most abnormal；Institute
The value stating target threshold voltage is: avoid memory element to produce leakage current when normal preprogrammed operation
The minima of threshold voltage ranges plus elasticity number, described elasticity number span is 0.1V to 0.2V
Between.
8. the erasing system of nonvolatile storage as claimed in claim 7, it is characterised in that described
Pre-programmed module includes that target threshold voltage sets submodule, for target setting threshold voltage, described
Target threshold voltage determines according at least one mode following:
The normal minima wiping state lower threshold voltages scope；
Memory element is avoided to produce the minimum of threshold voltage ranges of leakage current when normal preprogrammed operation
Value.
9. the erasing system of nonvolatile storage as claimed in claim 7 or 8, it is characterised in that
Described pre-programmed module includes:
Initial programming voltage determines module, for according to the threshold voltage current threshold of abnormal memory element
Threshold voltage and target threshold voltage determine the program voltage of initial preprogrammed operation.
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| US10297324B2 (en) * | 2017-05-25 | 2019-05-21 | Western Digital Technologies, Inc. | Physical secure erase of solid state drives |
| CN109872756A (en) * | 2017-12-01 | 2019-06-11 | 北京兆易创新科技股份有限公司 | A kind of memory method for deleting and device |
| CN113628659B (en) * | 2018-08-28 | 2023-12-15 | 长江存储科技有限责任公司 | Erasing method, device and computer readable storage medium |
| CN110473585B (en) * | 2019-07-31 | 2021-02-26 | 珠海博雅科技有限公司 | Replacement method, device and equipment for erasing failed storage unit and storage medium |
| CN110767258B (en) * | 2019-10-22 | 2022-03-22 | 江苏芯盛智能科技有限公司 | Data erasure command test method and related device |
| KR20210129490A (en) * | 2020-04-20 | 2021-10-28 | 에스케이하이닉스 주식회사 | Semiconductor memory device and operating method thereof |
| CN111261213B (en) * | 2020-04-30 | 2020-09-01 | 深圳市芯天下技术有限公司 | Erasing method of NOR Flash |
| CN113409869A (en) * | 2021-06-30 | 2021-09-17 | 芯天下技术股份有限公司 | Nonvolatile memory erasing method and device, electronic equipment and storage medium |
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| CN101923899A (en) * | 2009-06-09 | 2010-12-22 | 北京芯技佳易微电子科技有限公司 | Method and device for erasing nonvolatile memory |
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