CN103390424A - Erasing/programming method and device of memory - Google Patents
Erasing/programming method and device of memory Download PDFInfo
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- CN103390424A CN103390424A CN2012101409098A CN201210140909A CN103390424A CN 103390424 A CN103390424 A CN 103390424A CN 2012101409098 A CN2012101409098 A CN 2012101409098A CN 201210140909 A CN201210140909 A CN 201210140909A CN 103390424 A CN103390424 A CN 103390424A
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Abstract
The invention provides an erasing/programming method and device of memory, so as to solve the problems of low erasing/programming speed of a conventional memory. The method comprises the steps of carrying out erasing/programming operation and erasing/programming verification on a memory cell successively; if the erasing/programming verification is not passed, continuing a cyclic operation of erasing/programming erasing/programming verification; when a cumulative number of erasing/programming reaches a preset n-th level number and the erasing/programming verification is not passed, adjusting the intensity of erasing/programming according to the strength of the n-th level and continuing the cyclic operations of the erasing/programming and erasing/programming verification; and jumping out the cyclic when the erasing/programming verification passes or the cumulative number of erasing/programming reaches a preset maximum number. The number for erasing/programming pulse is reduced and speed for erasing/programming is greatly increased by adjusting the intensity of the erasing/programming pulse during the cyclic process of erasing/programming.
Description
Technical field
The application relates to the memory technology field, particularly relates to a kind of erasing-programming method and device of storer.
Background technology
The memory technology forward improves integrated level and dwindles the future development of component size at present, when using storer, often to preserve and delete to storer the operation of information, exist two kinds of basic units of storage in storer, erase cell (erase unit) and program cell (programming unit), be also " 1 " and " 0 ", therefore correspondence also just exists the basic operation of wiping and programming these two kinds of storage unit.The storage capacity of storer, power consumption and reliability, wipe in addition and the speed of programming is all to weigh the important indicator of storer quality.
In prior art, wipe and the programmed method of storer is the cycling of storage unit being wiped and programming with the pulse of constant intensity, and the continuous accumulation of the number of pulses by constant intensity finally realizes wiping and programming operation storer.This method needs a large amount of number of pulses, wipes with the time of programming operation longly, causes the whole speed of wiping and programming slow.
Summary of the invention
The application's technical matters to be solved is to provide a kind of erasing-programming method and device of storer, with the slow-footed problem of the erasing-programming that solves traditional storer.
In order to address the above problem, the application discloses a kind of erasing-programming method of storer, comprising:
Storage unit is carried out erase/program operations and erasing-programming checking successively;
, if described erasing-programming checking is not passed through, proceed the cycling of erasing-programming and erasing-programming checking;
When the cumulative number of erasing-programming reach default n number of stages and erasing-programming checking yet by the time, adjust the intensity of erasing-programming according to the intensity that the n level is set, and proceed the cycling of erasing-programming and erasing-programming checking; Wherein, n=1,2,3 ..., N, N is natural number;
, when erasing-programming is verified or the cumulative number of erasing-programming while reaching default maximum quantity, jump out circulation.
Preferably, the intensity of described adjustment erasing-programming is for increasing the pulse voltage that is applied on storage unit.
Preferably, described storage unit is carried out erase/program operations, comprising:
When an erasing-programming pulse arrives, storage unit is carried out erase/program operations one time.
Whether the cumulative number that preferably, judges in the following manner erasing-programming reaches default n number of stages:
The quantity of statistics erasing-programming pulse;
When the quantity of erasing-programming pulse reaches default n number of stages, judge that the cumulative number of described erasing-programming has reached default n number of stages.
Preferably, when the n value was 1, described n number of stages was 16;
When the n value was 2, described n number of stages was 32.
Preferably, if erase operation:
Before carrying out described erase operation, also comprise the pre-programmed operation;
Between described erase operation and erase verification, also comprise that first crosses erase verification;
Described jump out circulation after, also comprise that second crosses erase verification.
Preferably, if programming operation:
Before carrying out described programming operation, also comprise program verification.
Disclosed herein as well is a kind of erasing-programming device of storer, comprising:
Erasing-programming module and erasing-programming authentication module, be respectively used to storage unit is carried out erase/program operations and erasing-programming checking successively; , if described erasing-programming checking is not passed through, proceed the cycling of erasing-programming and erasing-programming checking;
Erasing-programming intensity adjusting module, being used for cumulative number when erasing-programming reaches default n number of stages and erasing-programming and verifies while not passing through yet, adjust the intensity of erasing-programming according to the intensity that the n level is set, and proceed the cycling of erasing-programming and erasing-programming checking; Wherein, n=1,2,3 ..., N, N is natural number;
, when erasing-programming is verified or the cumulative number of erasing-programming while reaching default maximum quantity, jump out circulation.
Preferably, described erasing-programming intensity adjusting module is adjusted the intensity of erasing-programming for increasing the pulse voltage that is applied on storage unit.
Preferably, when an erasing-programming pulse arrived, described erasing-programming module was carried out erase/program operations one time to storage unit;
Described erasing-programming intensity adjusting module comprises:
The statistics submodule, the quantity that is used for adding up the erasing-programming pulse;
Decision sub-module, when being used for quantity when the erasing-programming pulse and reaching default n number of stages, judge that the cumulative number of described erasing-programming has reached the n number of stages of presetting.
Preferably, if erase operation, described device also comprises:
The pre-programmed module, be used for wiping before module carries out described erase operation described, carries out the pre-programmed operation;
First crosses the erase verification module, is used for wiping module and the erase verification module is carried out between described erase operation and erase verification described, carries out first and crosses erase verification;
Second crosses the erase verification module, be used for described wipe the intensity adjusting module and jumping out circulation after, carry out second and cross erase verification.
Preferably, if programming operation:
Described program verification module also is used for carrying out program verification before described programming module is carrying out described programming operation.
Compared with prior art, the application comprises following advantage:
Erasing-programming method and the device of a kind of storer in the application,, by in the cyclic process of erasing-programming, adjust the intensity of erasing-programming pulse, reduced the quantity of erasing-programming pulse, greatly improved the speed of erasing-programming.
Description of drawings
Fig. 1 is the erasing-programming method flow diagram of the embodiment of the present application one storer;
Fig. 2 is the method for deleting process flow diagram of the embodiment of the present application two storeies;
Fig. 3 is the programmed method process flow diagram of the embodiment of the present application three storeies;
Fig. 4 is the erasing-programming structure drawing of device of the embodiment of the present application four storeies;
Fig. 5 is the erasing apparatus structural drawing of the embodiment of the present application five storeies;
Fig. 6 is the programmer structural drawing of the embodiment of the present application six storeies.
Embodiment
, for above-mentioned purpose, the feature and advantage that make the application can become apparent more, below in conjunction with the drawings and specific embodiments, the application is described in further detail.
The application has proposed a kind of erasing-programming method and device of storer, in the erasing-programming process that the erasing-programming pulse circulates to storer, improve the speed of whole erasing-programming process according to the dynamic changes of strength of the quantity of the erasing-programming pulses at different levels of setting and erasing-programming.
Below will introduce in detail by several embodiment erasing-programming method and the device of a kind of storer of the application's proposition.
Embodiment 1, a kind of erasing-programming method of storer.
, with reference to Fig. 1, show the erasing-programming method flow diagram of the described a kind of storer of the embodiment of the present application.
Exist two kinds of basic units of storage in storer, erase cell (erase unit) and program cell (programming unit), be also " 1 " and " 0 ", and therefore correspondence also just exists the basic operation of wiping and programming these two kinds of memory cells.
When an erasing-programming pulse arrives, storage unit is carried out erase/program operations one time;
An erasing-programming pulse can be carried out erase/program operations to one or more storage unit simultaneously.
If in erase operation, erase pulse (erasing pulse) wipes cell (storage unit), the purpose of wiping is erased to erase (wiping) state with cell (storage unit) by program (programming) state exactly, also namely by " 0 " to " 1 ".Specifically by grid and substrate at cell (storage unit), apply erasing voltage, by FN tunnelling physical influence (Fowler-Nordheim tunneling mechanism), realize.For example:, for modern nor type storer, be generally that grid is negative 9V left and right voltage, substrate ground connection or malleation; , for modern nand type storer, be generally grounded-grid, and substrate connect 20V left and right positive high voltage.For different type of memory, due to the difference of technique, concrete magnitude of voltage is also different.
Next cell (storage unit) is carried out EV (Erase Verify, erase verification), the purpose of erase verification is whether the checking erase operation passes through, concrete grammar is by at cell (storage unit) grid, applying erase verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been erased to erase cell (erase unit) zone, to namely stopping, be less than with regard to continuing to beat erase pulse (erasing pulse) and continue to wipe, until erase verification is passed through.
If in programming operation, the cell (storage unit) that program pulse (programming pulse) programmes to needs carries out PGM (Program, programming), the programming purpose exactly cell (storage unit) is programmed for program (programming) state by erase (wiping) state, also namely by " 1 " to " 0 ".(modern memory program voltage is generally grid 9V, drain electrode 4V left and right specifically by the grid at cell (storage unit) and drain electrode, to apply program voltage, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
Next cell (storage unit) is carried out PV (Program Verify, program verification), in this step, the purpose of program verification is whether the verification of programming operation is passed through, concrete grammar is by at cell (storage unit) grid, applying program verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been programmed into program cell (programming unit) zone, to namely stopping, be less than and just continue to beat program pulse (programming pulse) continuation programming, until program verification passes through.
If storage unit do not verifying by erasing-programming after first erasing-programming pulse, second erasing-programming pulse continues storage unit is operated, if checking is not passed through yet, so circulation is gone down.
The quantity of setting every one-level is in order to add up the number of erasing-programming pulse, erasing-programming is namely carried out in an erasing-programming pulse one time, simultaneously also according to the erasing-programming pulse of each number of stages, the erasing-programming pulse of setting this number of stages has identical erasing-programming intensity, adjusts the intensity of erasing-programming for increasing the erasing-programming pulse voltage that is applied on storage unit.
The foundation of setting the erasing-programming pulse of multistage quantity is to need which type of product performance index, for example the erasing-programming time.If the erasing-programming speed that product performance index requires is very fast, namely the erasing-programming time is very short, so naturally, wish system more self-adaptation some, namely more can reflect dynamically fast the situation of erasing-programming, at this moment the erasing-programming pulse of multistage quantity just can be set, when the erasing-programming pulse in a number of stages can't be completed erase/program operations, enter rapidly next stage and strengthened the circulation of erasing-programming intensity, this can dynamically accelerate the speed of whole erasing-programming naturally.
The cumulative number of judgement erasing-programming is the quantity by the pulse of statistics erasing-programming, and an erasing-programming pulse is carried out erasing-programming one time with regard to expression; When the quantity of erasing-programming pulse reaches default n number of stages, judge that the cumulative number of described erasing-programming has reached default n number of stages, wherein, n=1,2,3 ..., N, N is natural number.
In sum, the erasing-programming method of a kind of storer in the embodiment of the present application,, by in the cyclic process of erasing-programming, adjust the intensity of erasing-programming pulse, reduced the quantity of erasing-programming pulse, greatly improved the speed of erasing-programming.
Introduce in detail the method for deleting of a kind of storer of the application's proposition below by embodiment 2.
Embodiment 2, a kind of method for deleting of storer.
With reference to Fig. 2, the method for deleting process flow diagram of the described a kind of storer of the embodiment of the present application is shown.
The purpose of pre-programmed operation is that all storage unit in block (piece) all are programmed for same " 0 " state, i.e. high threshold state of value.Concrete grammar is to apply program voltage by the grid in storage unit and drain electrode (modern memory program voltage is generally grid 9V, drain electrode about 4V, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
When an erasing pulse arrives, storage unit is carried out erase operation one time.
Described erasing pulse can be carried out erase operation to one or more storage unit simultaneously.
The purpose of wiping is erased to erase (wiping) state with cell (storage unit) by program (programming) state exactly, also namely by " 0 " to " 1 ".Specifically by grid and substrate at cell (storage unit), apply erasing voltage, by FN tunnelling physical influence (Fowler-Nordheim tunneling mechanism), realize.For example:, for modern nor type storer, be generally that grid is negative 9V left and right voltage, substrate ground connection or malleation; , for modern nand type storer, be generally grounded-grid, and substrate connect 20V left and right positive high voltage.For different type of memory, due to the difference of technique, concrete magnitude of voltage is also different.
The first purpose of crossing erase verification be to by crossing, being wiped of may existing threshold value carry out once weak programming lower than the storage unit of 0V, more than shifting its threshold value onto 0V.Concrete grammar is to apply the first program voltage of crossing erase verification by the grid in storage unit and drain electrode (modern storer first program voltage of crossing erase verification is generally grid 0V, drain electrode 4V left and right, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
The purpose of erase verification is whether the checking erase operation passes through, concrete grammar is by at cell (storage unit) grid, applying erase verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been erased to erase cell (erase unit) zone, to namely stopping, be less than with regard to continuing to beat erase pulse (erasing pulse) and continue to wipe, until erase verification is passed through.
The quantity of setting every one-level is in order to add up the number of erasing pulse, an erasing pulse is namely once wiped, simultaneously also according to the erasing pulse of each number of stages, the erasing pulse of setting this number of stages has the identical intensity of wiping, and adjusting the intensity of wiping is to increase the erase pulse voltage that is applied on storage unit.The erasing pulse of setting multistage quantity and intensity can dynamically improve erasing speed.
For example, first order quantity is set as 16, and second level quantity is set as 16, and next stage quantity also is set as 16, sets altogether 4 grades, 64 of accumulative totals.Front 16 erasing pulses are carried out erase operation with identical voltage, if after the 16th erasing pulse wiped, erase verification is not still passed through, and enters the erase operation of second level quantity.16 erasing pulses of second level quantity are compared with 16 erasing pulses of first order quantity, and voltage is according to the strength increase of setting.After if the erasing pulse of second level quantity is all carried out erase operation, erase verification is not still passed through, enter the erase operation of next stage quantity, the erasing pulse of next stage quantity is compared with the erasing pulse of upper level quantity, and voltage is according to the strength increase of setting ... so circulation is gone down.
Also can set according to specific needs the quantity of every grade of erasing pulse of sum of series, for example, first order quantity is set as 8, second level quantity is set as 8, third level quantity is set as 16, the fourth season, quantity was set as 32, and level V quantity is set as 64, and the 6th number of stages is set as 128 etc.
When erase verification by or the cumulative frequency wiped reach default maximum quantity namely during the N number of stages, jump out circulation, N is natural number.
The purpose of described the second mistake erase verification and the first mistake erase verification is similar, and requirement is the threshold values that further raises storage unit, is used for eliminating inferior threshold values conducting leaky.
Even described subthreshold value conducting leaky means the storage unit grid and receives GND (Ground, ground wire) also having electric current exists, the leakage current that brings for fear of this subthreshold value conducting, realize by the threshold value that raises storage unit, generally, threshold values raises between 0.2V-0.4V.
Introduce in detail the programmed method of a kind of storer of the application's proposition below by embodiment 3.
Embodiment 3, a kind of programmed method of storer.
With reference to Fig. 3, the programmed method process flow diagram of the described a kind of storer of the embodiment of the present application is shown.
The purpose of program verification is to distinguish which cell (storage unit) in page (page) to need programming, which does not need, concrete grammar is by at cell (storage unit) grid, applying program verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been programmed into program cell (programming unit) zone,, to representing that namely this cell (storage unit) does not need programming, be less than and just represent that this cell (storage unit) needs programming.
When a programming pulse arrives, storage unit is carried out the one-time programming operation.
Described programming pulse can carry out programming operation to one or more storage unit simultaneously.
The programming purpose exactly cell (storage unit) is programmed for program (programming) state by erase (wiping) state, also namely by " 1 " to " 0 ".(modern memory program voltage is generally grid 9V, drain electrode 4V left and right specifically by the grid at cell (storage unit) and drain electrode, to apply program voltage, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
The purpose of program verification is whether the verification of programming operation is passed through, concrete grammar is by at cell (storage unit) grid, applying program verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been programmed into program cell (programming unit) zone, to namely stopping, be less than and just continue to beat program pulse (programming pulse) continuation programming, until program verification passes through.
The quantity of setting every one-level is in order to add up the number of programming pulse, a programming pulse namely carries out one-time programming, simultaneously also according to the programming pulse of each number of stages, the programming pulse of setting this number of stages has identical programming intensity, adjusts the intensity of programming for increasing the program voltage that is applied on storage unit.The programming pulse of setting multistage quantity and intensity can dynamically improve program speed.
For example, first order quantity is set as 16, and second level quantity is set as 16, and next stage quantity also is set as 16, sets altogether 4 grades, 64 of accumulative totals.After the programming pulse of front 16 identical voltages carries out programming operation, program verification does not still pass through, enter second level quantity, the programming pulse that other 16 voltages increase continues programming, if program verification does not still pass through, enter next stage, utilize the programming pulse that voltage increases again to continue programming operation ... so circulation is gone down.
Also can set according to specific needs the quantity of every grade of programming pulse of sum of series, for example, first order quantity is set as 8, second level quantity is set as 8, third level quantity is set as 16, the fourth season, quantity was set as 32, and level V quantity is set as 64, and the 6th number of stages is set as 128 etc.
When program verification by or the cumulative frequency of programming reach default maximum quantity namely during the N number of stages, jump out circulation, N is natural number.
The erasing-programming method of a kind of storer that proposes for the application, realize each step of said method by a kind of erasing-programming device of storer, introduce in detail structure and the function of this device below by embodiment 4.
Embodiment 4, a kind of erasing-programming device of storer.
, with reference to Fig. 4, show the erasing-programming structure drawing of device of the described a kind of storer of the embodiment of the present application.
Described erasing-programming device can comprise with lower module:
Erasing-programming module 41, erasing-programming authentication module 42, and, erasing-programming intensity adjusting module 43.
Below describe respectively the function of modules and the relation of intermodule in detail.
Erasing-programming module 41 and erasing-programming authentication module 42, be respectively used to storage unit is carried out erase/program operations and erasing-programming checking successively; , if described erasing-programming checking is not passed through, proceed the cycling of erasing-programming and erasing-programming checking;
Exist two kinds of basic units of storage in storer, erase cell (erase unit) and program cell (programming unit), be also " 1 " and " 0 ", and therefore correspondence also just exists the basic operation of wiping and programming these two kinds of memory cells.
When an erasing-programming pulse arrives, storage unit is carried out erase/program operations one time;
An erasing-programming pulse can be carried out erase/program operations to one or more storage unit simultaneously.
If in erase operation, the described module 41 of wiping utilizes erase pulse (erasing pulse) to wipe cell (storage unit), the purpose of wiping is erased to erase (wiping) state with cell (storage unit) by program (programming) state exactly, also namely by " 0 " to " 1 ".Specifically by grid and substrate at cell (storage unit), apply erasing voltage, by FN tunnelling physical influence (Fowler-Nordheim tunneling mechanism), realize.For example:, for modern nor type storer, be generally that grid is negative 9V left and right voltage, substrate ground connection or malleation; , for modern nand type storer, be generally grounded-grid, and substrate connect 20V left and right positive high voltage.For different type of memory, due to the difference of technique, concrete magnitude of voltage is also different.
Next 42 couples of cell of erase verification module (storage unit) carry out EV (Erase Verify, erase verification), the purpose of erase verification is whether the checking erase operation passes through, concrete grammar is by at cell (storage unit) grid, applying erase verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been erased to erase cell (erase unit) zone, to namely stopping, be less than with regard to continuing to beat erase pulse (erasing pulse) and continue to wipe, until erase verification is passed through.
If in programming operation, described programming module 41 utilizes the cell (storage unit) that program pulse (programming pulse) programmes to needs to carry out PGM (Program, programming), the programming purpose exactly cell (storage unit) is programmed for program (programming) state by erase (wiping) state, also namely by " 1 " to " 0 ".(modern memory program voltage is generally grid 9V, drain electrode 4V left and right specifically by the grid at cell (storage unit) and drain electrode, to apply program voltage, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
next 42 couples of cell of program verification module (storage unit) carry out PV (Program Verify, program verification), in this step, the purpose of program verification is whether the verification of programming operation is passed through, concrete grammar is by at cell (storage unit) grid, applying program verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been programmed into program cell (programming unit) zone, to namely stopping, be less than and just continue to beat program pulse (programming pulse) continuation programming, until program verification passes through.
If storage unit do not verifying by erasing-programming after first erasing-programming pulse, second erasing-programming pulse continues storage unit is operated, if checking is not passed through yet, so circulation is gone down.
Erasing-programming intensity adjusting module 43, being used for cumulative number when erasing-programming reaches default n number of stages and erasing-programming and verifies while not passing through yet, adjust the intensity of erasing-programming according to the intensity that the n level is set, and proceed the cycling of erasing-programming and erasing-programming checking; Wherein, n=1,2,3 ..., N, N is natural number;
, when erasing-programming is verified or the cumulative number of erasing-programming while reaching default maximum quantity, jump out circulation.
The quantity of setting every one-level is in order to add up the number of erasing-programming pulse, erasing-programming is namely carried out in an erasing-programming pulse one time, simultaneously also according to the erasing-programming pulse of each number of stages, the erasing-programming pulse of setting this number of stages has identical erasing-programming intensity, adjusts the intensity of erasing-programming for increasing the erasing-programming pulse voltage that is applied on storage unit.
The foundation of setting the erasing-programming pulse of multistage quantity is to need which type of product performance index, for example the erasing-programming time.If the erasing-programming speed that product performance index requires is very fast, namely the erasing-programming time is very short, so naturally, wish system more self-adaptation some, namely more can reflect dynamically fast the situation of erasing-programming, at this moment the erasing-programming pulse of multistage quantity just can be set, when the erasing-programming pulse in a number of stages can't be completed erase/program operations, enter rapidly next stage and strengthened the circulation of erasing-programming intensity, this can dynamically accelerate the speed of whole erasing-programming naturally.
The cumulative number of judgement erasing-programming is the quantity by the pulse of statistics erasing-programming, and an erasing-programming pulse is carried out erasing-programming one time with regard to expression; When the quantity of erasing-programming pulse reached default n number of stages, the cumulative number of described erasing-programming had reached default n number of stages, wherein, n=1,2,3 ..., N, N is natural number;
, when above-mentioned erasing-programming is verified or the cumulative frequency of erasing-programming reaches default maximum quantity namely during the N number of stages, jump out circulation.
In sum, the erasing-programming device of a kind of storer in the embodiment of the present application,, by in the cyclic process of erasing-programming, adjust the intensity of erasing-programming pulse, reduced the quantity of erasing-programming pulse, greatly improved the speed of erasing-programming.
Introduce in detail the erasing apparatus of a kind of storer of the application's proposition below by embodiment 5.
Embodiment 5, a kind of erasing apparatus of storer.
, with reference to Fig. 5, show the erasing apparatus structural drawing of the described a kind of storer of the embodiment of the present application.
Described erasing apparatus can comprise with lower module:
Pre-programmed module 51, wipe module 52, the first and cross erase verification module 53, and erase verification module 54, wipe intensity adjusting module 55, and second crosses erase verification module 56.
Be described as follows:
Pre-programmed module 51, be used for carrying out the pre-programmed operation wiping before module carries out erase operation;
The purpose of pre-programmed operation is that all storage unit in block (piece) all are programmed for same " 0 " state, it is the high threshold state of value, concrete grammar is to apply program voltage by the grid in storage unit and drain electrode (modern memory program voltage is generally grid 9V, drain electrode about 4V, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
Wipe module 52, be used for the storage unit through pre-programmed is carried out erase operation;
When an erasing pulse arrives, storage unit is carried out erase operation one time.
Described erasing pulse can be carried out erase operation to one or more storage unit simultaneously.
The purpose of wiping is erased to erase (wiping) state with cell (storage unit) by program (programming) state exactly, also namely by " 0 " to " 1 ".Specifically by grid and substrate at cell (storage unit), apply erasing voltage, by FN tunnelling physical influence (Fowler-Nordheim tunnelingmechanism), realize.For example:, for modern nor type storer, be generally that grid is negative 9V left and right voltage, substrate ground connection or malleation; , for modern nand type storer, be generally grounded-grid, and substrate connect 20V left and right positive high voltage.For different type of memory, due to the difference of technique, concrete magnitude of voltage is also different.
First crosses erase verification module 53, is used for carrying out between erase operation and erase verification wiping module and erase verification module, carries out first and crosses erase verification;
The first purpose of crossing erase verification be to by crossing, being wiped of may existing threshold value carry out once weak programming lower than the storage unit of 0V, more than shifting its threshold value onto 0V, concrete grammar is to apply the first program voltage of crossing erase verification by the grid in storage unit and drain electrode (modern storer first program voltage of crossing erase verification is generally grid 0V, drain electrode 4V left and right, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
Erase verification module 54, be used for the storage unit of wiping is carried out the erase verification operation;
The purpose of erase verification is whether the checking erase operation passes through, concrete grammar is by at cell (storage unit) grid, applying erase verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been erased to erase cell (erase unit) zone, to namely stopping, be less than with regard to continuing to beat erase pulse (erasing pulse) and continue to wipe, until erase verification is passed through.
Wipe intensity adjusting module 55, be used for quantity accumulative total when erasing pulse reach default n number of stages and erase verification by the time, the intensity of wiping according to the intensity adjustment of n level setting, and proceed to wipe cycling with erase verification;
Wipe in intensity adjusting module 55 and also comprise:
Statistics submodule 551, the quantity that is used for adding up erasing pulse;
Decision sub-module 552, when being used for quantity when erasing pulse and reaching default n number of stages, judge that the cumulative number of wiping has reached the n number of stages of presetting.
The quantity of setting every one-level is in order to add up the number of erasing pulse, an erasing pulse is namely once wiped, simultaneously also according to the erasing pulse of each number of stages, the erasing pulse of setting this number of stages has the identical intensity of wiping, and adjusting the intensity of wiping is to increase the erase pulse voltage that is applied on storage unit.The erasing pulse of setting multistage quantity and intensity can dynamically improve erasing speed.
For example, first order quantity is set as 16, and second level quantity is set as 16, and next stage quantity also is set as 16, sets altogether 4 grades, 64 of accumulative totals.Front 16 erasing pulses are carried out erase operation with identical voltage, if after the 16th erasing pulse wiped, erase verification is not still passed through, and enters the erase operation of second level quantity.16 erasing pulses of second level quantity are compared with 16 erasing pulses of first order quantity, and voltage is according to the strength increase of setting.After if the erasing pulse of second level quantity is all carried out erase operation, erase verification is not still passed through, enter the erase operation of next stage quantity, the erasing pulse of next stage quantity is compared with the erasing pulse of upper level quantity, and voltage is according to the strength increase of setting ... so circulation is gone down.
Also can set according to specific needs the quantity of every grade of erasing pulse of sum of series, for example, first order quantity is set as 8, second level quantity is set as 8, third level quantity is set as 16, the fourth season, quantity was set as 32, and level V quantity is set as 64, and the 6th number of stages is set as 128 etc.
Second crosses erase verification module 56, is used for carrying out second and crossing erase verification after wiping the intensity adjusting module and jumping out circulation.
When erase verification by or the cumulative frequency wiped reach default maximum quantity namely during the N number of stages, wipe the intensity adjusting module and jump out circulation, N is natural number.
The effect of described the second mistake erase verification module and the first mistake erase verification module is similar, and requirement is the threshold values that further raises storage unit, is used for eliminating inferior threshold values conducting leaky.
Even described subthreshold value conducting leaky means the storage unit grid and receives GND (Ground, ground wire) also having electric current exists, the leakage current that brings for fear of this subthreshold value conducting, realize by the threshold value that raises storage unit, generally, threshold values raises between 0.2V-0.4V.
Introduce in detail the programmer of a kind of storer of the application's proposition below by embodiment 6.
Embodiment 6, a kind of programmer of storer.
, with reference to Fig. 6, show the programmer structural drawing of the described a kind of storer of the embodiment of the present application.
Described programmer can comprise with lower module:
Program verification module 61, programming module 62, and, programming intensity adjusting module 63.
Be described as follows:
Program verification module 61, carry out program verification and the storage unit of programming carried out the program verification operation for the page object that needs is carried out programming operation;
The purpose of program verification is to distinguish which cell (storage unit) in page (page) to need programming, which does not need, concrete grammar is by at cell (storage unit) grid, applying program verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been programmed into program cell (programming unit) zone,, to representing that namely this cell (storage unit) does not need programming, be less than and just represent that this cell (storage unit) needs programming.
The purpose of program verification also comprises whether the verification of programming operation is passed through, concrete grammar is by at cell (storage unit) grid, applying program verification voltage, the electric current of cell (storage unit) is read out by sensor (sensor) circuit, to judge whether cell (storage unit) has been programmed into program cell (programming unit) zone, to namely stopping, be less than and just continue to beat program pulse (programming pulse) continuation programming, until program verification passes through.
Programming module 62, be used for the storage unit that the needs that carried out program verification are programmed is carried out programming operation;
When a programming pulse arrives, storage unit is carried out the one-time programming operation.
Described programming pulse can carry out programming operation to one or more storage unit simultaneously.
The programming purpose exactly cell (storage unit) is programmed for program (programming) state by erase (wiping) state, also namely by " 1 " to " 0 ".(modern memory program voltage is generally grid 9V, drain electrode 4V left and right specifically by the grid at cell (storage unit) and drain electrode, to apply program voltage, along with the different magnitudes of voltage of concrete technology are also different), realize by CHE (Channel Hot Electron, channel hot electron physical influence).
Programming intensity adjusting module 63, be used for quantity accumulative total when programming pulse reach default n number of stages and program verification by the time, the intensity of the intensity adjustment programming of setting according to the n level, and the cycling with program verification of proceeding to programme; Wherein, n=1,2,3 ..., N, N is natural number;
Also comprise in programming intensity adjusting module 63:
Statistics submodule 631, the quantity that is used for adding up programming pulse;
Decision sub-module 632, when being used for quantity when programming pulse and reaching default n number of stages, judge that the cumulative number of programming has reached the n number of stages of presetting.
The quantity of setting every one-level is in order to add up the number of programming pulse, a programming pulse namely carries out one-time programming, simultaneously also according to the programming pulse of each number of stages, the programming pulse of setting this number of stages has identical programming intensity, adjusts the intensity of programming for increasing the program voltage that is applied on storage unit.The programming pulse of setting multistage quantity and intensity can dynamically improve program speed.
For example, first order quantity is set as 16, and second level quantity is set as 16, and next stage quantity also is set as 16, sets altogether 4 grades, 64 of accumulative totals.After the programming pulse of front 16 identical voltages carries out programming operation, program verification does not still pass through, enter second level quantity, the programming pulse that other 16 voltages increase continues programming, if program verification does not still pass through, enter next stage, utilize the programming pulse that voltage increases again to continue programming operation ... so circulation is gone down.
Also can set according to specific needs the quantity of every grade of programming pulse of sum of series, for example, first order quantity is set as 8, second level quantity is set as 8, third level quantity is set as 16, the fourth season, quantity was set as 32, and level V quantity is set as 64, and the 6th number of stages is set as 128 etc.
When program verification by or the cumulative frequency of programming reach default maximum quantity namely during the N number of stages, programming intensity adjusting module is jumped out circulation, N is natural number.
Each embodiment in this instructions all adopts the mode of going forward one by one to describe, and what each embodiment stressed is and the difference of other embodiment that between each embodiment, identical similar part is mutually referring to getting final product.
Finally, also need to prove, in this article, relational terms such as the first and second grades only is used for an entity or operation are separated with another entity or operational zone, and not necessarily requires or hint between these entities or operation the relation of any this reality or sequentially of existing.
The erasing-programming method and apparatus of above a kind of storer that the application is provided is described in detail, applied specific case herein the application's principle and embodiment are set forth, the explanation of above embodiment just is used for helping to understand the application's method and core concept thereof; Simultaneously, for one of ordinary skill in the art, the thought according to the application, all will change in specific embodiments and applications, and in sum, this description should not be construed as the restriction to the application.
Claims (12)
1. the erasing-programming method of a storer, is characterized in that, comprising:
Storage unit is carried out erase/program operations and erasing-programming checking successively;
, if described erasing-programming checking is not passed through, proceed the cycling of erasing-programming and erasing-programming checking;
When the cumulative number of erasing-programming reach default n number of stages and erasing-programming checking yet by the time, adjust the intensity of erasing-programming according to the intensity that the n level is set, and proceed the cycling of erasing-programming and erasing-programming checking; Wherein, n=1,2,3 ..., N, N is natural number;
, when erasing-programming is verified or the cumulative number of erasing-programming while reaching default maximum quantity, jump out circulation.
2. method according to claim 1 is characterized in that:
The intensity of described adjustment erasing-programming is for increasing the pulse voltage that is applied on storage unit.
3. method according to claim 1, is characterized in that, described storage unit carried out erase/program operations, comprising:
When an erasing-programming pulse arrives, storage unit is carried out erase/program operations one time.
4. method according to claim 3, is characterized in that, judges in the following manner whether the cumulative number of erasing-programming reaches default n number of stages:
The quantity of statistics erasing-programming pulse;
When the quantity of erasing-programming pulse reaches default n number of stages, judge that the cumulative number of described erasing-programming has reached default n number of stages.
5. method according to claim 1 is characterized in that:
When the n value was 1, described n number of stages was 16;
When the n value was 2, described n number of stages was 32.
According to claim 1 to 5 arbitrary described method, it is characterized in that, if erase operation:
Before carrying out described erase operation, also comprise the pre-programmed operation;
Between described erase operation and erase verification, also comprise that first crosses erase verification;
Described jump out circulation after, also comprise that second crosses erase verification.
According to claim 1 to 5 arbitrary described method, it is characterized in that, if programming operation:
Before carrying out described programming operation, also comprise program verification.
8. the erasing-programming device of a storer, is characterized in that, comprising:
Erasing-programming module and erasing-programming authentication module, be respectively used to storage unit is carried out erase/program operations and erasing-programming checking successively; , if described erasing-programming checking is not passed through, proceed the cycling of erasing-programming and erasing-programming checking;
Erasing-programming intensity adjusting module, being used for cumulative number when erasing-programming reaches default n number of stages and erasing-programming and verifies while not passing through yet, adjust the intensity of erasing-programming according to the intensity that the n level is set, and proceed the cycling of erasing-programming and erasing-programming checking; Wherein, n=1,2,3 ..., N, N is natural number;
, when erasing-programming is verified or the cumulative number of erasing-programming while reaching default maximum quantity, jump out circulation.
9. device according to claim 8 is characterized in that:
Described erasing-programming intensity adjusting module is adjusted the intensity of erasing-programming for increasing the pulse voltage that is applied on storage unit.
10. device according to claim 8 is characterized in that:
When an erasing-programming pulse arrived, described erasing-programming module was carried out erase/program operations one time to storage unit;
Described erasing-programming intensity adjusting module comprises:
The statistics submodule, the quantity that is used for adding up the erasing-programming pulse;
Decision sub-module, when being used for quantity when the erasing-programming pulse and reaching default n number of stages, judge that the cumulative number of described erasing-programming has reached the n number of stages of presetting.
11. according to claim 8 to 10 arbitrary described device, it is characterized in that, if erase operation also comprises:
The pre-programmed module, be used for wiping before module carries out described erase operation described, carries out the pre-programmed operation;
First crosses the erase verification module, is used for wiping module and the erase verification module is carried out between described erase operation and erase verification described, carries out first and crosses erase verification;
Second crosses the erase verification module, be used for described wipe the intensity adjusting module and jumping out circulation after, carry out second and cross erase verification.
12. according to claim 8 to 10 arbitrary described device, it is characterized in that, if programming operation:
Described program verification module also is used for carrying out program verification before described programming module is carrying out described programming operation.
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