CN103794717A - 一种包含介电层的嵌入型磁隧道结器件的制造方法 - Google Patents
一种包含介电层的嵌入型磁隧道结器件的制造方法 Download PDFInfo
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- CN103794717A CN103794717A CN201410072401.8A CN201410072401A CN103794717A CN 103794717 A CN103794717 A CN 103794717A CN 201410072401 A CN201410072401 A CN 201410072401A CN 103794717 A CN103794717 A CN 103794717A
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134748A (zh) * | 2014-07-17 | 2014-11-05 | 北京航空航天大学 | 一种信息传感及存储器件及其制备方法 |
CN107039581A (zh) * | 2016-01-15 | 2017-08-11 | 台湾积体电路制造股份有限公司 | 半导体结构、电极结构及其形成方法 |
CN108028313A (zh) * | 2015-09-25 | 2018-05-11 | 英特尔公司 | 具有多层过滤器堆叠体的psttm器件 |
CN108242502A (zh) * | 2016-12-27 | 2018-07-03 | 上海磁宇信息科技有限公司 | 一种制备磁性隧道结的方法 |
WO2019061826A1 (zh) * | 2017-09-28 | 2019-04-04 | 中电海康集团有限公司 | Mtj器件、其制作方法与mram |
CN109671645A (zh) * | 2017-10-16 | 2019-04-23 | 三星电子株式会社 | 用于制造半导体器件的工艺控制方法和工艺控制*** |
WO2019114356A1 (zh) * | 2017-12-11 | 2019-06-20 | 江苏鲁汶仪器有限公司 | 一种磁隧道结及其制造方法 |
CN110050355A (zh) * | 2016-12-06 | 2019-07-23 | 艾沃思宾技术公司 | 磁阻设备及其方法 |
CN113887734A (zh) * | 2021-12-07 | 2022-01-04 | 北京芯可鉴科技有限公司 | 随机磁隧道结器件及应用方法 |
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CN1717799A (zh) * | 2002-11-27 | 2006-01-04 | 飞思卡尔半导体公司 | 磁电子器件及其制造方法 |
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CN1985377A (zh) * | 2004-07-26 | 2007-06-20 | 飞思卡尔半导体公司 | 磁隧道结元件结构和用于制造该结构的方法 |
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CN101960630A (zh) * | 2008-03-04 | 2011-01-26 | 高通股份有限公司 | 形成磁隧道结结构的方法 |
CN102347439A (zh) * | 2010-07-30 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | 磁阻存储器的形成方法 |
CN102376875A (zh) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | 磁阻存储器的形成方法 |
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US20030198093A1 (en) * | 2002-04-11 | 2003-10-23 | Yates Donald L. | Methods of fabricating an mram device using chemical mechanical polishing |
CN1717799A (zh) * | 2002-11-27 | 2006-01-04 | 飞思卡尔半导体公司 | 磁电子器件及其制造方法 |
CN1906764A (zh) * | 2004-01-14 | 2007-01-31 | 国际商业机器公司 | 低kCVD材料的梯度沉积 |
CN1985377A (zh) * | 2004-07-26 | 2007-06-20 | 飞思卡尔半导体公司 | 磁隧道结元件结构和用于制造该结构的方法 |
CN101197311A (zh) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | 金属连接结构、半导体器件的制造方法和半导体器件 |
CN101960630A (zh) * | 2008-03-04 | 2011-01-26 | 高通股份有限公司 | 形成磁隧道结结构的方法 |
CN102347439A (zh) * | 2010-07-30 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | 磁阻存储器的形成方法 |
CN102376875A (zh) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | 磁阻存储器的形成方法 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134748B (zh) * | 2014-07-17 | 2017-01-11 | 北京航空航天大学 | 一种信息传感及存储器件及其制备方法 |
CN104134748A (zh) * | 2014-07-17 | 2014-11-05 | 北京航空航天大学 | 一种信息传感及存储器件及其制备方法 |
CN108028313A (zh) * | 2015-09-25 | 2018-05-11 | 英特尔公司 | 具有多层过滤器堆叠体的psttm器件 |
CN108028313B (zh) * | 2015-09-25 | 2022-04-15 | 英特尔公司 | 具有多层过滤器堆叠体的psttm器件 |
CN107039581A (zh) * | 2016-01-15 | 2017-08-11 | 台湾积体电路制造股份有限公司 | 半导体结构、电极结构及其形成方法 |
US11581484B2 (en) | 2016-01-15 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure, electrode structure and method of forming the same |
CN110050355A (zh) * | 2016-12-06 | 2019-07-23 | 艾沃思宾技术公司 | 磁阻设备及其方法 |
CN110050355B (zh) * | 2016-12-06 | 2023-06-23 | 艾沃思宾技术公司 | 磁阻设备及其方法 |
CN108242502B (zh) * | 2016-12-27 | 2021-04-27 | 上海磁宇信息科技有限公司 | 一种制备磁性隧道结的方法 |
CN108242502A (zh) * | 2016-12-27 | 2018-07-03 | 上海磁宇信息科技有限公司 | 一种制备磁性隧道结的方法 |
WO2019061826A1 (zh) * | 2017-09-28 | 2019-04-04 | 中电海康集团有限公司 | Mtj器件、其制作方法与mram |
CN109671645A (zh) * | 2017-10-16 | 2019-04-23 | 三星电子株式会社 | 用于制造半导体器件的工艺控制方法和工艺控制*** |
WO2019114356A1 (zh) * | 2017-12-11 | 2019-06-20 | 江苏鲁汶仪器有限公司 | 一种磁隧道结及其制造方法 |
CN113887734A (zh) * | 2021-12-07 | 2022-01-04 | 北京芯可鉴科技有限公司 | 随机磁隧道结器件及应用方法 |
CN113887734B (zh) * | 2021-12-07 | 2022-04-22 | 北京芯可鉴科技有限公司 | 随机磁隧道结器件及应用方法 |
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Effective date of registration: 20231222 Address after: Room 1605, Building 1, No. 117 Yingshan Red Road, Huangdao District, Qingdao City, Shandong Province, 266400 Patentee after: Qingdao Haicun Microelectronics Co.,Ltd. Address before: 100191 rooms 504a and 504b, 5th floor, 23 Zhichun Road, Haidian District, Beijing Patentee before: Zhizhen storage (Beijing) Technology Co.,Ltd. |
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