CN103794714A - Manufacturing method of stress sensor based on nanorod diode piezoelectric effect - Google Patents
Manufacturing method of stress sensor based on nanorod diode piezoelectric effect Download PDFInfo
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- CN103794714A CN103794714A CN201410044167.8A CN201410044167A CN103794714A CN 103794714 A CN103794714 A CN 103794714A CN 201410044167 A CN201410044167 A CN 201410044167A CN 103794714 A CN103794714 A CN 103794714A
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Abstract
The invention discloses a manufacturing method of a stress sensor based on the nanorod diode piezoelectric effect. The method comprises the steps that an n-type layer, a multi-quantum-well active area and a p-type layer sequentially grow on a substrate, and a nanometer small ball array is assembled on the upper surface of the p-type layer; the nanometer small ball array is adopted as a mask, an LED structure is etched, the etching depth makes contact with the n-type layer, and a nanorod LED array is formed; transparent materials fill the gaps among the nanorod LED array; a metal conductive layer deposits on the surface of the nanorod LED array; part of the n-type layer is exposed through etching, and an n-type electrode and a p-type electrode are manufactured on the upper surface of the exposed n-type layer and the metal conductive layer through a metal evaporation method; a transparent rigid base plate is pressed on the part, not provided with the p-type electrode, of the surface of the metal conductive layer; the n-type electrode and the p-type electrode are communicated, and manufacturing of the stress sensor is finished.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of preparation method of the strain gauge based on nano-pillar diode piezoelectric effect.
Background technology
In the nano-pillar semiconductor diode array of heteroepitaxy, because piezoelectric effect exists large piezoelectric field, can make diode can be with run-off the straight, effective bandwidth narrows, emission wavelength generation red shift.And piezoelectric field is along with ambient pressure changes.That is to say, under changing, ambient pressure can make the quantum well effective bandwidth of active area, thereby diode emergent light wavelength, color also can follow ambient pressure to change, can observe very intuitively like this size of extraneous stress, thereby realize warning function.Such as being applied to the weight limit alarm of bridge by vehicle etc.
Summary of the invention
In view of this, the present invention proposes a kind of preparation method of the strain gauge based on nano-pillar diode piezoelectric effect, it comprises:
Step 1: growing n-type layer, Multiple Quantum Well active area, p-type layer successively on substrate, and in the little ball array of upper surface self assembly one deck nanometer of described p-type layer;
Step 2: utilize nanometer bead array as mask, etch LED structure, etching depth touches N-shaped layer, forms nano-pillar LED array;
Step 3: between nano-pillar LED array, fill transparent material;
Step 4: the surface deposition layer of metal conductive layer of nano-pillar LED array;
Step 5: etching is exposed a part of N-shaped layer, prepares N-shaped electrode and p-type electrode at the N-shaped layer upper surface exposing and metal conducting layer upper surface by the method for metal evaporation;
Step 6: do not make transparent rigid substrates of p-type electrode part dividing potential drop on metal conducting layer surface;
Step 7: be communicated with N-shaped electrode and p-type electrode, complete the preparation of strain gauge.
The such scheme that the present invention proposes utilizes the piezoelectric field in the nano-pillar semiconductor diode array of heteroepitaxy to prepare strain gauge, along with ambient pressure changes.Can make the quantum well effective bandwidth of active area change, thus the outstanding wavelength of diode array, and namely the color of emergent light can change, and can observe very intuitively like this size of extraneous stress, thereby realize warning function.
Accompanying drawing explanation
Fig. 1 the present invention is based in the strain gauge preparation method of nano-pillar diode piezoelectric effect to prepare the schematic diagram after the little ball array of nanometer;
Fig. 2 the present invention is based in the strain gauge preparation method of nano-pillar diode piezoelectric effect to form the schematic diagram after nano-pillar LED array;
Fig. 3 the present invention is based in the strain gauge preparation method of nano-pillar diode piezoelectric effect to fill the schematic diagram after transparent resin;
Fig. 4 the present invention is based on the schematic diagram after plated metal conductive layer in the strain gauge preparation method of nano-pillar diode piezoelectric effect;
Fig. 5 the present invention is based in the strain gauge preparation method of nano-pillar diode piezoelectric effect to obtain the schematic diagram after metal electrode;
Fig. 6 the present invention is based in the strain gauge preparation method of nano-pillar diode piezoelectric effect to have pressed the schematic diagram after transparency glass plate;
Fig. 7 the present invention is based in the strain gauge preparation method of nano-pillar diode piezoelectric effect on transparency glass plate, to apply the schematic diagram after certain pressure.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Refer to Fig. 1 to Fig. 7, the invention provides a kind of strain gauge preparation method based on nano-pillar diode piezoelectric effect, comprise the following steps:
Step 1: get a substrate 10, the thin film N-shaped GaN11 that grows, one deck Multiple Quantum Well of then growing active area, i.e. MQWs12 and P type GaN, i.e. p-GaN13 on substrate 10; Finally, at p-GaN13, form a complete LED structure, finally at the compact arranged nanometer bead of p-GaN13 surface self-organization one deck array 14; Wherein, substrate 10 is Sapphire Substrate, can be also glass, Si, ZnO, AlN, SiC, GaN, GaAs, LiAlO
2in other III/V family, IV/VI family binary, ternary and quaternary compound semiconductor alloy substrate material, also comprise the nonmetallic materials such as the metal materials such as Cu and quartz etc., the thickness of n-GaN11 is at 1 to 10 micron, it can be also other III/V families such as n-AlGaN, n-ZnO, n-InP, n-GaAs, IV/VI family binary, ternary and quaternary compound semiconductor alloy material; MQWs12 is preferably m InGaN (In
yga
1-yn) a quantum well and m+1 gallium nitride (GaN) quantum potential barrier, each InGaN (In
yga
1-yn) there are a gallium nitride (GaN) quantum potential barrier, wherein m>=1,0≤y≤1 in the upper and lower both sides of quantum well; Multiple Quantum Well MQWs12 finally can comprise an electronic barrier layer, is selected from Al
zga
1-zn material, wherein 0≤z≤1; P-GaN13 thickness is that between 10nm-1 μ m, blocked up p-GaN can have absorption to emergent light, can be also other III/V families such as p-AlGaN, p-ZnO, p-InP, p-GaAs, IV/VI family binary, ternary and quaternary compound semiconductor alloy material; The growing method adopting when nitride epitaxial growth be in metal-organic chemical vapor deposition equipment MOCVD, HVPE or molecular beam epitaxy MBE any one, or any two or three combination; N-shaped and p-type doped source are respectively silicon and magnesium; Nanometer bead array 14, can be that polystyrene spheres, silica spheres, PDMS ball, alumina balls, cesium chloride ball etc. can be arranged ball by self-assembling technique, and diameter is 0.1-1um.Or other metal such as Ni, Ag and the nonmetal bead that form by metal self assembly; See Fig. 1.
Step 2: utilize nanometer bead array 14 as mask, etching LED structure, etching depth touches n-GaN11, forms nano-pillar LED array 20; Wherein, adopt ICP etching, etching gas is Cl base gas, can certainly be in conjunction with chemical corrosion, be put in (or in KOH solution) corrosion in high-temperature concentrated sulfuric acid and phosphoric acid mixed solution, and under the high temperature of 200-400 degree, corrode, thereby eliminate etching injury; See Fig. 2.
Step 3: between nano-pillar LED array 20, fill transparent resin 30; Wherein, packing material 30 can be other inorganic and organic transparent materials such as glass, plastics, resin, silica gel, silica, pottery, but the method for fill method spin-coating method and sputter; See Fig. 3.
Step 4: the surface deposition layer of metal conductive layer 40 of nano-pillar LED array 20, wherein, metal conducting layer 40 can be selected from and comprise nickel (Ni)/gold (Au), nickel (Ni)/silver (Ag)/gold (Au), nickel (Ni)/silver (Ag)/nickel (Ni)/gold (Au), nickel (Ni)/silver (Ag)/platinum (Pt)/gold (Au), titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/gold (Au), titanium (Ti)/aluminium (Al)/titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/titanium (Ti)/gold (Au), aluminium (Al)/titanium (Ti)/gold (Au), chromium (Cr)/platinum (Pt)/gold (Au), a kind of material in chromium (Cr)/silver (Ag)/metal material groups such as gold (Au), also comprise Graphene, carbon nano-tube, ITO, GZO, AZO, metal nanometer line arrays etc. are as the electric conducting material of conducting film, see Fig. 4.
Step 5: by etching technics, expose a part of n-GaN11, obtain respectively metal electrode 50 by the method for metal evaporation, i.e. N-shaped electrode and p-type electrode on n-GaN11 surface and metal conducting layer 40 surfaces of exposing, wherein, through photoetching, the techniques such as electron beam evaporation are prepared n and P type metal, metal conducting layer 40 can be selected from and comprise nickel (Ni)/gold (Au), nickel (Ni)/silver (Ag)/gold (Au), nickel (Ni)/silver (Ag)/nickel (Ni)/gold (Au), nickel (Ni)/silver (Ag)/platinum (Pt)/gold (Au), titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/gold (Au), titanium (Ti)/aluminium (Al)/titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/titanium (Ti)/gold (Au), aluminium (Al)/titanium (Ti)/gold (Au), chromium (Cr)/platinum (Pt)/gold (Au), a kind of material in chromium (Cr)/silver (Ag)/metal material groups such as gold (Au), see Fig. 5.
Step 6: do not make metal electrode part on metal conducting layer 40 surfaces and press a transparency glass plate 60, be convenient to exert pressure, and guaranteed the outgoing of light; Wherein, transparency glass plate 60, can be inorganic and organic rigid transparent materials such as transparent plastic, metal, ceramic wafer, and its thickness can be any thickness; See Fig. 6.
Step 7: switch on power 70, utilize electric wire to be communicated with N-shaped electrode and p-type electrode, and apply certain pressure 71 on transparency glass plate 60; Now, because the variation of external pressure 71, can make the piezoelectric field in nano-pillar LED array 14 change, can make the effective bandwidth of the multi-quantum pit structure MQWs12 in nano-pillar LED array 14 change along with external pressure, the wavelength of the emergent light 60 of its result nano-pillar LED array 14 can change, still can be from the change color of emergent light 60, visual perception is to the variation of external pressure, and realizes warning function; Wherein, switch on power after 70, under the effect of impressed pressure 71, can visual perception arrive the variation of ambient pressure, and realize alarm function by the change color of emergent light 72, its principle is to utilize the variation of piezoelectric field in nano-pillar LED array 20, sees Fig. 7.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a preparation method for the strain gauge based on nano-pillar diode piezoelectric effect, comprises the following steps:
Step 1: growing n-type layer, Multiple Quantum Well active area, p-type layer successively on substrate, and in the little ball array of upper surface self assembly one deck nanometer of described p-type layer;
Step 2: utilize nanometer bead array as mask, etch LED structure, etching depth touches N-shaped layer, forms nano-pillar LED array;
Step 3: between nano-pillar LED array, fill transparent material;
Step 4: the surface deposition layer of metal conductive layer of nano-pillar LED array;
Step 5: etching is exposed a part of N-shaped layer, prepares N-shaped electrode and p-type electrode at the N-shaped layer upper surface exposing and metal conducting layer upper surface by the method for metal evaporation;
Step 6: do not make transparent rigid substrates of p-type electrode part dividing potential drop on metal conducting layer surface;
Step 7: be communicated with N-shaped electrode and p-type electrode, complete the preparation of strain gauge.
2. the method for claim 1, wherein described N-shaped layer and p-type layer are III/V family, IV/VI family binary, ternary and quaternary semiconductor and turn to thing semiconductor alloy material, and the thickness of described p-type layer is between 10nm-1 μ m.
3. the method for claim 1, wherein Multiple Quantum Well comprises m indium gallium nitride quantum well and m+1 gallium nitride quantum potential barrier, and there are a gallium nitride quantum potential barrier, wherein m >=1,0≤y≤1 in the upper and lower both sides of each indium gallium nitride quantum well.
4. the method for claim 1, wherein the little ball array of described nanometer can be polystyrene spheres, silica spheres, PDMS ball, alumina balls, cesium chloride ball, Ni ball or Ag ball.
5. the method for claim 1, wherein in step 2, adopt ICP etching, etching gas is Cl base gas, and the nano-pillar LED array after etching is put in high-temperature concentrated sulfuric acid and phosphoric acid mixed solution and is corroded, and corrosion temperature is 200-400.
6. the transparent material of the method for claim 1, wherein filling in step 3 is glass, plastics, resin, silica gel, silica or pottery.
7. the method for claim 1, wherein described metal conducting layer is metal material or the electric conducting material using Graphene, carbon nano-tube, ITO, GZO, AZO, metal nanometer line array as conducting film.
8. the method for claim 1, wherein transparent rigid substrates described in step 6 can be transparent plastic, metal or ceramic wafer.
9. the method for claim 1, wherein in the time that external pressure is applied on described rigid substrates, change the variation that judges ambient pressure by the light color from rigid substrates outgoing.
10. the method for claim 1, wherein described N-shaped layer and p-type layer are made up of gallium nitride material.
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| CN104761154A (en) * | 2015-03-03 | 2015-07-08 | 西安交通大学 | Method for preparation of ITO nanowire under catalysis of organic macromolecular material |
| CN106653793A (en) * | 2016-02-19 | 2017-05-10 | 北京纳米能源与***研究所 | Nano light-emitting array and manufacturing method thereof, and nano light-emitting device |
| CN107046228A (en) * | 2017-04-07 | 2017-08-15 | 华南师范大学 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
| CN107230679A (en) * | 2016-03-23 | 2017-10-03 | 格罗方德半导体公司 | High density memory cells structure |
| CN107515061A (en) * | 2017-08-14 | 2017-12-26 | 京东方科技集团股份有限公司 | A kind of touch sensor and preparation method thereof |
| CN108133993A (en) * | 2018-01-30 | 2018-06-08 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
| CN109599410A (en) * | 2018-12-03 | 2019-04-09 | 中国科学院半导体研究所 | The visible light communication light source and preparation method thereof of modulation bandwidth enhancing |
| CN109855768A (en) * | 2019-02-22 | 2019-06-07 | 清华大学 | A kind of sensing device based on graphene and preparation method thereof, application method |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104761154A (en) * | 2015-03-03 | 2015-07-08 | 西安交通大学 | Method for preparation of ITO nanowire under catalysis of organic macromolecular material |
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| CN106653793A (en) * | 2016-02-19 | 2017-05-10 | 北京纳米能源与***研究所 | Nano light-emitting array and manufacturing method thereof, and nano light-emitting device |
| CN107230679A (en) * | 2016-03-23 | 2017-10-03 | 格罗方德半导体公司 | High density memory cells structure |
| CN107046228A (en) * | 2017-04-07 | 2017-08-15 | 华南师范大学 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
| CN107046228B (en) * | 2017-04-07 | 2019-08-06 | 华南师范大学 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
| CN107515061A (en) * | 2017-08-14 | 2017-12-26 | 京东方科技集团股份有限公司 | A kind of touch sensor and preparation method thereof |
| CN108133993A (en) * | 2018-01-30 | 2018-06-08 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
| CN109599410A (en) * | 2018-12-03 | 2019-04-09 | 中国科学院半导体研究所 | The visible light communication light source and preparation method thereof of modulation bandwidth enhancing |
| CN109599410B (en) * | 2018-12-03 | 2021-03-26 | 中国科学院半导体研究所 | Visible light communication light source with enhanced modulation bandwidth and preparation method thereof |
| CN109855768A (en) * | 2019-02-22 | 2019-06-07 | 清华大学 | A kind of sensing device based on graphene and preparation method thereof, application method |
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Application publication date: 20140514 |