CN103787661B - A kind of MoSi 2the preparation method of-RSiC matrix material - Google Patents

A kind of MoSi 2the preparation method of-RSiC matrix material Download PDF

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CN103787661B
CN103787661B CN201310715292.2A CN201310715292A CN103787661B CN 103787661 B CN103787661 B CN 103787661B CN 201310715292 A CN201310715292 A CN 201310715292A CN 103787661 B CN103787661 B CN 103787661B
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CN103787661A (en
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高朋召
肖汉宁
郭文明
张小亮
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Hunan University
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Abstract

The invention discloses a kind of MoSi 2the preparation method of-RSiC matrix material.The method combines by resin impregnating cracking process and multi-component alloys are activated infiltration process, under the infiltrating temperature of 1600 DEG C ~ 2000 DEG C, makes RSiC material and MoSi 2the excellent properties of material organically combines, and obtains mechanical behavior under high temperature excellence, heat-conductivity conducting is good, high-temperature oxidation resistance is excellent MoSi 2-RSiC matrix material, thus can MoSi be solved 2the shortcoming of the low temperature brittleness that electrical heating element material exists and high-temperature creep resistance difference, also can solve SiC electrical heating element and melt because of Si the difficult problem causing being used for more than 1400 DEG C, can be used as high temperature exothermic element material of new generation and high-temperature structural material application.

Description

A kind of MoSi 2the preparation method of-RSiC matrix material
Technical field
The present invention relates to material preparation technology, refer to that preparing molybdenum disilicide by polymer infiltration and pyrolysis (PIP) and multi-component alloys activation infiltration (being called for short AMI) technique (is called for short MoSi further 2the method of)-re-crystallized silicon carbide (being called for short RSiC) matrix material.
Background technology
High-temperature electric heat element material under current air atmosphere mainly contains silicon carbide reaction-sintered (being called for short RBSiC) and MoSi 2.
The use temperature of RBSiC electrical heating element is that room temperature is to 1400 DEG C, based on the reason of preparation method, inevitably there is silicon (Si) and remain in RBSiC material, fusing point due to Si is 1420 DEG C, when use temperature is higher than 1420 DEG C, residual Si melts, and causes the hot strength of RBSiC material and creep-resistant property sharply to decline, make RBSiC electrical heating element higher than the mechanics of 1400 DEG C and electric heating property sharply deteriorated, work-ing life significantly shortens.
MoSi 2the use temperature of electrical heating element is from room temperature to 1700 DEG C, reaches as high as 1750 DEG C.But MoSi 2there is following shortcoming in material: (1) low temperature brittleness is large, causes such electrical heating element in processing, installs and use procedure easy fracture; (2) high-temperature creep resistance is poor, causes such electrical heating element to be often made into U-shaped, at right angle setting, the height of process furnace and width is all restricted, cannot installs and uses under some complex working conditions; (3) low temperature antioxidant property is poor, at about 500 DEG C, and MoSi 2because oxidation generates needle-like MoO 3and fine and close protective membrane cannot be formed, cause shorten the work-ing life of this class component; (4) RBSiC is compared, MoSi 2price high.Above-mentioned shortcoming constrains MoSi to a great extent 2the use range of electrical heating element.
At present to RBSiC and MoSi 2material carries out modification by various method, but effect is very not remarkable.As passed through high-temperature vacuum silica removal to RBSiC material, adjustment reactant ratio and firing process are eliminated Si and are remained.The former cost is too high, undesirable to large size goods effect, and latter is difficult to avoid C to remain, and cannot improve the use temperature of RBSiC electrical heating element equally.
To MoSi 2the study on the modification of material is a lot, and as carried out activeness and quietness by adding the second-phases such as particle, whisker, fiber, the material of interpolation comprises SiC, Al 2o 3, Si 3n 4, AlN, TiB 2, WSi 2deng.Modification has made some progress, but still unrealized commercialization.Trace it to its cause, although mainly modification improves MoSi 2the Room-Temperature Fracture Toughness of material and intensity, low temperature antioxidant property etc., but improve less to the high-temperature creep resistance of material, hot strength (>=1300 DEG C), also significantly can increase cost.
Patent [CN1448461A] utilizes WSi 2and MoSi 2complete solid solution and WSi 2compare MoSi 2the feature that fusing point is higher, makes MoSi 2the high temperature deformation resistance ability of material and heat resisting temperature improve, and the maximum operation (service) temperature of such electrical heating element can reach 1900 DEG C, but its preparation cost is than common MoSi 2electrical heating element significantly increases, and thus more difficultly applies.Patent [CN1865191A] is with (Mo 1-x, W x) Si 2be a phase, with the Zirconium oxide powder of yttrium oxide/stable calcium oxide for another prepares molybdenum disilicide mutually-zirconia composite heating element, not only there is Cost Problems in the method, and the high-temperature creep resistance of matrix material is also not ideal enough.Mo (Si 1-x, Al x) 2/ MoSi 2(x=0.1-0.6) complex phase molybden silicide material heating element has higher fracture toughness property and low temperature antioxidant property, but Mo (Si 1-x, Al x) 2high-temperature stability and antioxidant property undesirable, the application demand [CN103159482A] under causing the high-temperature oxidation resistance of such heating material and creep-resistant property still can not meet high temperature.
Patent [CN102976757A] discloses and a kind of adopts silicon carbide, molybdenum disilicide and oxide compound to be main raw material, prepares complex phase ceramic Heating element by spraying dry, dry-pressing or cold isostatic compaction, sintering.Although the method technique is simple, but still there is the bad problem of high-temperature creep resistance.
Patent [CN101157557A] discloses a kind of molybdenum disilicide-and match grand composite exothermic body, its raw material is with MoSi 2powder is main, and adding match grand (sialon) powder is reinforcer, and adding two chromium silicide powder is activator.This invention to some extent solves MoSi 2problem easily broken in the processing that heating element causes because intensity and toughness are too low, transport, installation and use procedure, but the high-temperature mechanics of composite exothermic body and creep resistance still have much room for improvement.
RSiC material has excellent high-temperature creep resistance and mechanical behavior under high temperature (the strength ratio room temperature strength of 1400 DEG C is high by about 20%), corrosion-resistant, thermal conductivity is good, in addition its less thermal expansivity, has obtained many application at industrial circles such as aerospace, metallurgy, potteries.Its preparation method is after being mixed with very thin SiC micro mist by thicker SiC particle, be shaped by slip casting method, then in vacuum induction sintering oven under the high temperature of more than 2300 DEG C, make fine particle SiC evaporate and again condense at the contact neck of coarse particles SiC, thus coarse particles SiC is be combined with each other the uniform three-dimensional porous reticulated structure of formation.Still there is the pore of about 15% in the RSiC goods that current density is the highest, and these pores are interconnected, and open pore accounts for more than 95%.The existence of these pores, makes the intensity of RSiC goods less than 30% of dense sintering SiC goods, is also oxidized the passage of providing convenience for oxygen is deep into inner at high temperature generation of RSiC goods simultaneously, limits the widespread use of RSiC goods.
Bibliographical information is had to utilize direct infiltration method to prepare MoSi 2-RSiC matrix material.This matrix material has excellent high-temperature oxidation resistant and conduction/heat conductivility.But because of MoSi 2do not mate with RSiC thermal expansivity and cause the interfacial bonding property of matrix material more weak, mechanical property improves not obvious, and the infiltrating temperature of more than 2100 DEG C is harsh to equipment requirements, and preparation technology's cost is high, is unfavorable for applying.
Summary of the invention
The technical problem to be solved in the present invention is, for existing RBSiC and MoSi 2the deficiency that electrical heating element material exists, has invented a kind of MoSi 2the preparation method of-RSiC matrix material, the method resol (PF) infiltration pyrolysis and MoSi 2-Si-Ti-Cr activates the dense Mo Si that infiltration process preparation has three-dimensional interpenetrating polymer network structure 2-RSiC matrix material, solves MoSi 2the low temperature brittleness that electrical heating element exists and the shortcoming of high-temperature creep resistance difference, also overcome RBSiC electrical heating element because of Si fusing and cause being used for the problem of more than 1400 DEG C.
This invention is by all filling MoSi by the connection pore of RSiC 2, significantly improve the density of RSiC material, thus improve its high-temperature oxidation resistant, conductive and heat-conductive and mechanical property etc., preparing can by RSiC and MoSi 2the advantage of material organically combines and overcomes the dense Mo Si with three-dimensional interpenetrating polymer network structure not enough separately 2-RSiC matrix material.
Technical scheme of the present invention is:
A kind of MoSi 2the preparation method of-RSiC matrix material, comprises the following steps:
(1) RSiC cleansing article is clean, and constant weight is dried at 100 DEG C ~ 120 DEG C;
(2) in resol, add the carbon black that mass percent is 5% ~ 20%, prepare homodisperse dipping sizing agent by ultrasonic disperse mode;
(3) the RSiC goods processed through step (1) are placed in vacuum impregnation indoor, start vacuum pump, when pressure in vacuum chamber is less than 10Pa, described for step (2) dipping sizing agent is sucked in vacuum chamber, make slurry complete submergence RSiC goods, dipping time is 30 minutes ~ 80 minutes, obtains dipping sample;
(4) take out step (3) gained sample, solidify 1.5 hours ~ 2.5 hours at 75 DEG C ~ 85 DEG C, obtain solidification sample;
(5) the solidification sample processed through step (4) being placed in what be connected with Ar protective atmosphere take silicon carbide as the tube furnace of Heating element, slowly rise to 950 DEG C ~ 1050 DEG C with the temperature rise rate of 1.5 DEG C/min ~ 2.5 DEG C/min and carry out cracking, be incubated 1 hour ~ 5 hours, obtain C/RSiC goods;
(6) plumbago crucible will be put into through step (5) gained C/RSiC goods, MoSi landfill mixed around 2-Si-Ti-Cr powder, carries out high temperature infiltration under Ar atmosphere protection in carbon tube furnace, and temperature rise rate is 12 DEG C/min ~ 17 DEG C/min, infiltrating temperature is 1600 DEG C ~ 2000 DEG C, soaking time 30 minutes ~ 90 minutes, comes out of the stove when then cooling to the furnace below 100 DEG C, obtains the product after infiltration; Described MoSi 2moSi in-Si-Ti-Cr powder 2the weight part of powder, Si powder, Ti powder and Cr powder is:
(7) infiltration after product is taken out from plumbago crucible, remove the MoSi of remained on surface 2-Si-Ti-Cr material, the MoSi namely obtained 2-RSiC matrix material.
The density of described RSiC goods is 2.45g/cm 3~ 2.70g/cm 3, there is the open porosity of 15% ~ 25%.
Solid content >=70% of described resol.
Purity>=99% of described carbon black, particle diameter≤1 ㎜; MoSi 2purity>=98% of powder, particle diameter≤5 ㎜; Purity>=99% of Si powder, particle diameter≤5 ㎜; Purity>=99% of Ti powder, particle diameter≤5 ㎜; Purity>=99% of Cr powder, particle diameter≤5 ㎜.
Described MoSi 2the preparation method of-Si-Ti-Cr powder is: take MoSi by following weight part 2powder, Si powder, Ti powder and Cr powder, be placed in tetrafluoroethylene ball grinder, adds respectively and MoSi 2the dehydrated alcohol that powder, Si powder, Ti powder are identical with Cr powder total mass and agate ball, ball mill mixing 1.5 hours ~ 2.5 hours, then in 40 DEG C ~ 50 DEG C forced air dryings, the MoSi be namely uniformly mixed 2-Si-Ti-Cr powder.
MoSi 2moSi in-Si-Ti-Cr powder 2the weight part of powder, Si powder, Ti powder and Cr powder is preferably:
Obtain MoSi as stated above 2the volume density of-RSiC matrix material is 3.35 ~ 3.55g/cm 3, open porosity is less than 1.5%, and room temperature bending strength is 100 ~ 140MPa, and the high-temperature bending strength of 1400 DEG C is 120 ~ 160MPa, and the creep-resistant property of 1400 DEG C is 7 ~ 9 × 10 -8s -1, volume specific resistance is 0.3 ~ 0.8m Ω cm, and room temperature is 50 ~ 65W (mK) to 1200 DEG C of thermal conductivitys -1.Being only 20 ~ 30% of RSiC in the weightening finish of 1500 DEG C of oxidation 100h, is MoSi 270 ~ 90%.
Below the present invention is made and further illustrating.
In the matrix material with three-dimensional interpenetrating polymer network structure, matrix and second-phase form respective three-dimensional space contiguous network structure and mutually run through, and bi-material characteristic separately can both be retained.The main preparation methods of such matrix material is that molten (melting) oozes second-phase in the resistant to elevated temperatures porous matrix of one.
Technical contribution of the present invention is, on the basis of RSiC goods, by simple resin impregnating cracking and MoSi 2-Si-Ti-Cr alloy activation infiltration, obtains a kind of dense Mo Si with three-dimensional interpenetrating polymer network structure 2-RSiC matrix material.The present invention is by the high-temperature mechanics of RSiC material excellence and heat conductivility and MoSi 2the high-temperature oxidation resistant of material excellence and electrical and thermal conductivity performance organically combine.Table 1 is RSiC, MoSi 2with the MoSi adopting this technology to prepare 2the various performance perameter contrasts of-RSiC matrix material.
Table 1 RSiC, MoSi 2and MoSi 2the various performance perameters of-RSiC matrix material
* literature value-represent temporary countless certificate is represented
As shown in Table 1, the dense Mo Si for preparing of the present invention's polymer infiltration and pyrolysis and multi-component alloys infiltration process 2-RSiC matrix material, by RSiC material and MoSi 2the excellent properties of material organically combines, and can solve MoSi 2the shortcoming of the low temperature brittleness that electrical heating element material exists and high-temperature creep resistance difference, also can solve RBSiC electrical heating element and melt because of Si the problem causing being used for more than 1400 DEG C, have lower-cost advantage simultaneously.
Compared with prior art, advantage of the present invention is:
(1) pass through at MoSi 2middle interpolation Si-Ti-Cr component forms congruent melting phase, and infiltrating temperature is reduced to 1600 DEG C ~ 2000 DEG C from more than 2100 DEG C of direct infiltration method; (2) MoSi in matrix material is improved 2with the interfacial bonding property of SiC, be conducive to the raising of matrix material mechanical behavior under high temperature and conduction, heat conductivility; (3) adopt cheap resol as presoma, and in resol, add carbon black improve infiltration pyrolysis efficiency, method is easier also more economical.
The present invention makes full use of the three-dimensional porous structure of RSiC, develops a kind ofly to prepare the dense Mo Si with three-dimensional interpenetrating polymer network structure 2the method of-RSiC matrix material.The present invention is by the high-temperature mechanics of RSiC material excellence and heat conductivility and MoSi 2the high-temperature oxidation resistance of material excellence, conduction, heat conductivility organically combine, and are particularly suitable for the high-temperature electric heat element making a new generation, can overcome existing MoSi 2with the shortcoming of RBSiC electrical heating element, and with low cost.Meanwhile, MoSi 2the mechanical behavior under high temperature of-RSiC matrix material excellence also can be used as high-temperature structural material and obtains application.
Accompanying drawing explanation
Fig. 1 is gained MoSi of the present invention 2the typical microstructure figure of-RSiC matrix material.
Embodiment
Embodiment 1: described polymer infiltration and pyrolysis and multi-component alloys activation infiltration prepare MoSi 2the method of-RSiC matrix material, comprises the following steps:
(1) be 2.45g/cm by density 3common RSiC cleansing article clean, and be dried to constant weight at 100 DEG C;
(2) in resol (PF), add the carbon black that mass percent is 18%, prepare homodisperse dipping sizing agent by ultrasonic disperse mode;
(3) the RSiC goods processed through step (1) are placed in vacuum impregnation indoor, start vacuum pump, when the pressure in vacuum chamber is less than 10Pa, dipping sizing agent is sucked in vacuum chamber, make slurry complete submergence RSiC goods, dipping time is 80 minutes;
(4) take out step (3) gained sample, solidify 2 hours in 80 DEG C of baking ovens, flow out to avoid the PF resin be infiltrated up in RSiC hole.
(5) the PF/RSiC goods processed through step (4) being placed in what be connected with Ar gas shielded take silicon carbide as the tube furnace of Heating element; slowly rise to 1000 DEG C with the temperature rise rate of 2 DEG C/min and carry out cracking; be incubated 2 hours, obtain C/RSiC goods.
(6) a certain amount of MoSi is taken by following mass ratio 2powder, Si powder, Ti powder and Cr powder, be placed in tetrafluoroethylene ball grinder, adds and the dehydrated alcohol of infiltration powder equal quality and agate ball, ball mill mixing 2 hours, then forced air drying in 40 DEG C of baking ovens, the MoSi be uniformly mixed 2-Si-Ti-Cr powder.MoSi 2the massfraction ratio of powder, Si powder, Ti powder and Cr powder is:
(7) plumbago crucible will be put into through step (5) gained C/RSiC goods, MoSi landfill prepared through step (6) around 2-Si-Ti-Cr powder, carries out high temperature infiltration under Ar gas shielded in carbon tube furnace, and temperature rise rate is 15 DEG C/min, and infiltrating temperature is 1700 DEG C, and soaking time 30 minutes, comes out of the stove when then cooling to the furnace below 100 DEG C.
(8) product after infiltration is taken out from plumbago crucible, remove the MoSi of remained on surface 2-Si-Ti-Cr material, the MoSi namely obtained 2-RSiC matrix material.
Described MoSi 2the volume density of-RSiC matrix material is 3.38g/cm 3, its open porosity is 1.2%, and room temperature bending strength is 105MPa, and the high-temperature bending strength of 1400 DEG C is 121MPa, and the creep-resistant property of 1400 DEG C is 9 × 10 -8s -1, volume specific resistance is 0.312m Ω cm, and RT-1200 DEG C of thermal conductivity is 52.5W (mK) -1.
Embodiment 2: described polymer infiltration and pyrolysis and multi-component alloys activation infiltration prepare MoSi 2the method of the technology of preparing of-RSiC matrix material, comprises the following steps:
(1) be 2.60g/cm by density 3common RSiC cleansing article clean, and be dried to constant weight at 100 DEG C ~ 120 DEG C;
(2) in resol (PF), add the carbon black that mass percent is 12%, prepare homodisperse dipping sizing agent by ultrasonic disperse mode;
(3) the RSiC goods processed through step (1) are placed in vacuum impregnation indoor, start vacuum pump, when the pressure in vacuum chamber is less than 10Pa, dipping sizing agent is sucked in vacuum chamber, make slurry complete submergence RSiC goods, dipping time is 60 minutes;
(4) take out step (3) gained sample, solidify 2 hours in 80 DEG C of baking ovens, flow out to avoid the PF resin be infiltrated up in RSiC hole.
(5) the PF/RSiC goods processed through step (4) being placed in what be connected with Ar gas shielded take silicon carbide as the tube furnace of Heating element; slowly rise to 1000 DEG C with the temperature rise rate of 2 DEG C/min and carry out cracking; be incubated 3 hours, obtain C/RSiC goods.
(6) a certain amount of MoSi is taken by following mass ratio 2powder, Si powder, Ti powder and Cr powder, be placed in tetrafluoroethylene ball grinder, adds and the dehydrated alcohol of infiltration powder equal quality and agate ball, ball mill mixing 2 hours, then forced air drying in 40 DEG C of baking ovens, the MoSi be uniformly mixed 2-Si-Ti-Cr powder.MoSi 2the massfraction ratio of powder, Si powder, Ti powder and Cr powder is:
(7) plumbago crucible will be put into through step (5) gained C/RSiC goods, MoSi landfill prepared through step (6) around 2-Si-Ti-Cr powder, carries out high temperature infiltration under Ar gas shielded in carbon tube furnace, and temperature rise rate is 15 DEG C/min, and infiltrating temperature is 1800 DEG C, and soaking time 60 minutes, comes out of the stove when then cooling to the furnace below 100 DEG C.
(8) product after infiltration is taken out from plumbago crucible, remove the MoSi of remained on surface 2-Si-Ti-Cr material, the MoSi namely obtained 2-RSiC matrix material.
Described MoSi 2the volume density of-RSiC matrix material is 3.43g/cm 3, its open porosity is 0.8%, and room temperature bending strength is 115MPa, and the high-temperature bending strength of 1400 DEG C is 138MPa, and the creep-resistant property of 1400 DEG C is 8.5 × 10 -8s -1, volume specific resistance is 0.515m Ω cm, and RT-1200 DEG C of thermal conductivity is 58W (mK) -1.
Embodiment 3: described polymer infiltration and pyrolysis and multi-component alloys activation infiltration prepare MoSi 2the method of the compound high-temperature material of-RSiC, comprises the following steps:
(1) be 2.70g/cm by density 3common RSiC cleansing article clean, and be dried to constant weight at 100 DEG C ~ 120 DEG C;
(2) in resol (PF), add the carbon black that mass percent is 6%, prepare homodisperse dipping sizing agent by ultrasonic disperse mode;
(3) the RSiC goods processed through step (1) are placed in vacuum impregnation indoor, start vacuum pump, when the pressure in vacuum chamber is less than 10Pa, dipping sizing agent is sucked in vacuum chamber, make slurry complete submergence RSiC goods, dipping time is 40 minutes;
(4) take out step (3) gained sample, solidify 2 hours in 80 DEG C of baking ovens, flow out to avoid the PF resin be infiltrated up in RSiC hole.
(5) the PF/RSiC goods processed through step (4) being placed in what be connected with Ar gas shielded take silicon carbide as the tube furnace of Heating element; slowly rise to 1000 DEG C with the temperature rise rate of 2 DEG C/min and carry out cracking; be incubated 4 hours, obtain C/RSiC goods.
(6) a certain amount of MoSi is taken by following mass ratio 2powder, Si powder, Ti powder and Cr powder, be placed in tetrafluoroethylene ball grinder, adds and the dehydrated alcohol of infiltration powder equal quality and agate ball, ball mill mixing 2 hours, then forced air drying in 50 DEG C of baking ovens, the MoSi be uniformly mixed 2-Si-Ti-Cr powder.MoSi 2the massfraction ratio of powder, Si powder, Ti powder and Cr powder is:
(7) plumbago crucible will be put into through step (5) gained C/RSiC goods, MoSi landfill prepared through step (6) around 2-Si-Ti-Cr powder, carries out high temperature infiltration under Ar gas shielded in carbon tube furnace, and temperature rise rate is 15 DEG C/min, and infiltrating temperature is 2000 DEG C, and soaking time 90 minutes, comes out of the stove when then cooling to the furnace below 100 DEG C.
(8) product after infiltration is taken out from plumbago crucible, remove the MoSi of remained on surface 2-Si-Ti-Cr material, the MoSi namely obtained 2-RSiC matrix material.
Described MoSi 2the volume density of-RSiC matrix material is 3.52g/cm 3, its open porosity is 0.5%, and room temperature bending strength is 135MPa, and the high-temperature bending strength of 1400 DEG C is 160MPa, and the creep-resistant property of 1400 DEG C is 7 × 10 -8s -1, volume specific resistance is 0.796m Ω cm, and RT-1200 DEG C of thermal conductivity is 63W (mK) -1.

Claims (7)

1. a MoSi 2the preparation method of-RSiC matrix material, comprises the following steps:
(1) RSiC cleansing article is clean, and constant weight is dried at 100 DEG C ~ 120 DEG C;
(2) in resol, add the carbon black that mass percent is 5% ~ 20%, prepare homodisperse dipping sizing agent by ultrasonic disperse mode;
(3) the RSiC goods processed through step (1) are placed in vacuum impregnation indoor, start vacuum pump, when pressure in vacuum chamber is less than 10Pa, described for step (2) dipping sizing agent is sucked in vacuum chamber, make slurry complete submergence RSiC goods, dipping time is 30 minutes ~ 80 minutes, obtains dipping sample;
(4) take out step (3) gained sample, solidify 1.5 hours ~ 2.5 hours at 75 DEG C ~ 85 DEG C, obtain solidification sample;
(5) the solidification sample processed through step (4) being placed in what be connected with Ar protective atmosphere take silicon carbide as the tube furnace of Heating element, slowly rise to 950 DEG C ~ 1050 DEG C with the temperature rise rate of 1.5 DEG C/min ~ 2.5 DEG C/min and carry out cracking, be incubated 1 hour ~ 5 hours, obtain C/RSiC goods;
(6) plumbago crucible will be put into through step (5) gained C/RSiC goods, MoSi landfill mixed around 2-Si-Ti-Cr powder, carries out high temperature infiltration under Ar atmosphere protection in carbon tube furnace, and temperature rise rate is 12 DEG C/min ~ 17 DEG C/min, infiltrating temperature is 1600 DEG C ~ 2000 DEG C, soaking time 30 minutes ~ 90 minutes, comes out of the stove when then cooling to the furnace below 100 DEG C, obtains the product after infiltration; Described MoSi 2moSi in-Si-Ti-Cr powder 2the weight part of powder, Si powder, Ti powder and Cr powder is:
MoSi 260 ~ 90 parts
Si 10 ~ 35 parts
Ti 2 ~ 10 parts
Cr 2 ~ 10 parts
(7) infiltration after product is taken out from plumbago crucible, remove the MoSi of remained on surface 2-Si-Ti-Cr material, namely obtains MoSi 2-RSiC matrix material.
2. MoSi according to claim 1 2the preparation method of-RSiC matrix material, is characterized in that, the density of described RSiC goods is 2.45 g/cm 3~ 2.70g/cm 3, there is the open porosity of 15% ~ 25%.
3. MoSi according to claim 1 2the preparation method of-RSiC matrix material, is characterized in that, solid content>=70% of described resol.
4. MoSi according to claim 1 2the preparation method of-RSiC matrix material, is characterized in that, purity>=99% of described carbon black, particle diameter≤1mm; MoSi 2purity>=98% of powder, particle diameter≤5mm; Purity>=99% of Si powder, particle diameter≤5mm; Purity>=99% of Ti powder, particle diameter≤5mm; Purity>=99% of Cr powder, particle diameter≤5mm.
5. MoSi according to claim 1 2the preparation method of-RSiC matrix material, is characterized in that, described MoSi 2the preparation method of-Si-Ti-Cr powder is: take MoSi by weight 2powder, Si powder, Ti powder and Cr powder, be placed in tetrafluoroethylene ball grinder, adds respectively and MoSi 2the dehydrated alcohol that powder, Si powder, Ti powder are identical with Cr powder total mass and agate ball, ball mill mixing 1.5 hours ~ 2.5 hours, then in 40 DEG C ~ 50 DEG C forced air dryings, namely obtains the MoSi mixed 2-Si-Ti-Cr powder.
6. MoSi according to claim 1 2the preparation method of-RSiC matrix material, is characterized in that, described MoSi 2moSi in-Si-Ti-Cr powder 2the weight part of powder, Si powder, Ti powder and Cr powder is preferably:
MoSi 265-80 part
Si 15-30 part
Ti 4-8 part
Cr 4-8 part.
7. according to the described MoSi of one of claim 1 ~ 6 2the preparation method of-RSiC matrix material, is characterized in that, described MoSi 2the volume density of-RSiC matrix material is 3.35 g/cm 3~ 3.55g/cm 3, open porosity is less than 1.5%.
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