CN103780241B - TCCT match circuit for plasma etch chambers - Google Patents
TCCT match circuit for plasma etch chambers Download PDFInfo
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- CN103780241B CN103780241B CN201310503860.2A CN201310503860A CN103780241B CN 103780241 B CN103780241 B CN 103780241B CN 201310503860 A CN201310503860 A CN 201310503860A CN 103780241 B CN103780241 B CN 103780241B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
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- Spectroscopy & Molecular Physics (AREA)
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- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a TCCT match circuit for plasma etch chambers, particularly to a match circuit. The match circuit includes the following: a power input circuit coupled to an RF source; an inner coil input circuit coupled between the power input circuit and an input terminal of an inner coil, the inner coil input circuit including an inductor and a capacitor coupled in series to the inductor, the inductor connecting to the power input circuit, and the capacitor connecting to the input terminal of the inner coil, a first node being defined between the power input circuit and the inner coil input circuit; an inner coil output circuit coupled between an output terminal of the inner coil and ground, the inner coil output circuit defining a direct pass-through connection to ground; an outer coil input circuit coupled between the first node and an input terminal of an outer coil; and an outer coil output circuit coupled between an output terminal of the outer coil and ground.
Description
Priority request
This application claims submitted on December 31st, 2012 and entitled " TCCT Match Circuit for Plasma
The priority of the U.S. Provisional Application of the Application No. 61/747,919 of Etch Chambers ".The application is used as submitted in 2012
On October 23, in and entitled " Faraday Shield Having Plasma Density Decoupling Structure
The continuous case in part of the U.S. Patent application of Between TCP Coiling Zones " Application No.s 13/658,652 requires excellent
First weigh, and the U.S. Patent application 13/658,652 used as submitted in August 4 days and entitled " Internal in 2011
Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning
The United States Patent (USP) Shen of Relative to External Inner and Outer TCP Coil " Application No.s 13/198,683
The continuous case in part please is claimed priority, and this application 13/198,683 require it is submitted on April 28th, 2011 and entitled
“Internal Faraday Shield Having Distributed Chevron Patterns and Correlated
Positioning Relative to External Inner and outer TCP Coil " Application No.s 61/480,314
U.S. Provisional Patent Application priority.The complete disclosure of these applications is that all purposes is incorporated in herein by reference
In.
Technical field
This patent disclosure relates generally to semiconductor manufacturing, and relate more particularly to for TCCT of plasma etch chamber
With circuit.
Background technology
In semiconductor fabrication, etch process is generally repeated implemented.As known to those skilled in the art, have two
The etch process of type：Wet etching and dry etching.A type of dry etching is that use feeling answers coupled plasma
The plasma etching that body Etaching device is performed.
Plasma includes various types of free radicals and cation and anion.Various free radicals, cation and negative
The chemical reaction of ion is used to etch feature, surface and the material of chip.During etch processes, chamber coil is performed and transformation
The functionally similar function of the primary coil in device, and plasma perform with transformator in secondary coil it is functionally similar
Function.
Existing transformer coupled capacitor tuning (TCCT) matched design meets with some problem, especially when for magneto-resistor
When random access memory (MRAM) performs manufacturing process.Problem includes limited TCCT scopes, limited transformer coupled etc.
Gas ions (TCP) power, high coil voltage and coil arc discharge.As a result, the process window of reactor chamber can be extremely limited,
Mean not adapt to various formula.If processing the formula outside window is forced operation, it is electric because of overvoltage and/or excessively
Stream is interlocked and stopped, and even worse, can cause the arc discharge and ceramic window and ceramic cross of TPC coils
(cross) destruction.Additionally, when terminal voltage is less balanced, due to the ceramic window caused by the Capacitance Coupled of TCP coils
Splash effect can develop with the time.As a result, granule is sputtered from ceramic window, it is subsequently deposited on chip, can causes
Production loss.The operation lifetime of reactor can be limited to such as 500RF hours runs by the effect.
In view of the foregoing, for the improved TCCT match circuits for plasma etch chamber have demand.
The content of the invention
Disclose a kind of for Semiconductor substrate to be etched during semiconductor device is manufactured and Semiconductor substrate is formed in
On layer device.The device is limited by TCCT match circuits, and its control performs wherein the plasma process chamber of etching
TCP coils operation.
In one embodiment, there is provided a kind of match circuit being coupling between RF sources and plasma chamber, it is described
Match circuit includes following part：Power input circuit, the power input circuit is coupled with RF sources；Interior loop input circuit,
It is coupling between the power input circuit and the input terminal of interior loop, the interior loop input circuit include inducer and
The capacitor coupled in series with the inducer, the inducer is connected with power input circuit, and capacitor and interior lines
The input terminal connection of circle, primary nodal point is limited between power input circuit and interior loop input circuit；Interior loop output electricity
Road, it is coupling between the lead-out terminal of interior loop and ground, and the interior loop output circuit is limited and is connected with the direct insertion on ground；
Exterior loop input circuit, it is coupling between primary nodal point and the input terminal of exterior loop；Exterior loop output circuit, it is coupling in
Between the lead-out terminal and ground of exterior loop.
In one embodiment, capacitor is with the variable capacitance in about 150pF to the value about between 1500pF
Device；And the capacitor has in about 0.3uH to the value about between 0.5uH.
In one embodiment, exterior loop input circuit includes the second capacitor.
In one embodiment, the second capacitor be with about 150pF to the rated value about between 1500pF
Variable condenser.
In one embodiment, exterior loop output circuit includes the second capacitor.In one embodiment, the second capacitor
With in about 80pF to the value about between 120pF.In another embodiment, the second capacitor have about 100pF+/- it is big
About 1% value.
In one embodiment, power input circuit includes：Second capacitor, it is coupled with RF sources；Second inducer, its
Couple with interior loop input circuit；3rd capacitor, it is coupling between the second capacitor and the second inducer, secondary nodal point limit
It is scheduled between the second capacitor and the 3rd capacitor；And the 4th capacitor, it is coupling between secondary nodal point and ground.At one
In embodiment, the second capacitor has in about 5pF to the rated value about between 500pF；3rd capacitor has about
50pF is to the rated value about between 500pF；Second inducer has in about 0.3uH to the value about between 0.5uH；And
4th capacitor has the value in about 200pF to about 300pF.In one embodiment, the 4th capacitor has about
The value of 250pF+/- about 1%.
In another embodiment, there is provided a kind of match circuit, it includes following part：Power input circuit, the work(
Rate input circuit is coupled with RF sources；Interior loop input circuit, its be coupling in power input circuit and interior loop input terminal it
Between, interior loop input circuit includes inducer and the first capacitor coupled in series with the inducer, inducer and power
Input circuit connects, and the first capacitor is connected with the input terminal of interior loop, and primary nodal point is limited to power input circuit
And interior loop input circuit between；Interior loop output circuit, it is coupling between the lead-out terminal of interior loop and ground, and interior loop is defeated
Go out circuit restriction to be connected with the direct insertion on ground；Exterior loop input circuit, it is coupling in the input of primary nodal point and exterior loop
Between son；Exterior loop output circuit, it is coupling between the lead-out terminal of exterior loop and ground, and the exterior loop output circuit includes
The second capacitor with the value more than about 100pF.
In one embodiment, the first capacitor is with the variable of about 150pF to the value about between 1500pF
Capacitor；And inducer has in about 0.3uH to the value about between 0.5uH.
In one embodiment, exterior loop input circuit includes the 3rd capacitor.In one embodiment, the 3rd capacitor
It is with the variable condenser in about 150pF to the rated value about between 1500pF.
In one embodiment, power input circuit includes：3rd capacitor, it is coupled with RF sources；Second inducer, its
Couple with interior loop input circuit；4th capacitor, it is coupling between the 3rd capacitor and the second inducer, secondary nodal point limit
It is scheduled between the 3rd capacitor and the 4th capacitor；And the 5th capacitor, it is coupling between secondary nodal point and ground.At one
In embodiment, the 3rd capacitor has in about 5pF to the rated value about between 500pF；4th capacitor has about
50pF is to the rated value about between 500pF；Second inducer has in about 0.3uH to the value about between 0.5uH；And
5th capacitor has about 200pF to the value about between 300pF.In one embodiment, the 5th capacitor has big
The value of about 250pF+/- about 1%.
In another embodiment, there is provided a kind of match circuit, it includes following part：Power input circuit, the power
Input circuit is coupled with RF sources；Interior loop input circuit, it is coupling between power input circuit and the input terminal of interior loop,
The interior loop input circuit includes inducer and the first capacitor for coupling in series with the inducer, the inducer with
Power input circuit connects, and first capacitor is connected with the input terminal of interior loop, and primary nodal point is limited to power
Between input circuit and interior loop input circuit；Interior loop output circuit, it is coupling between the lead-out terminal of interior loop and ground,
Interior loop output circuit is limited and is connected with the direct insertion on ground；Exterior loop input circuit, it is coupling in primary nodal point and exterior loop
Input terminal between, the exterior loop input circuit include the second capacitor；Exterior loop output circuit, it is coupling in exterior loop
Lead-out terminal and ground between, exterior loop output circuit include the 3rd capacitor.
In one embodiment, the first capacitor be with about 150pF to the rated value about between 1500pF
Variable condenser；And wherein described inducer has in about 0.3uH to the value about between 0.5uH.
In one embodiment, the second capacitor be with about 150pF to the rated value about between 1500pF
Variable condenser.
In one embodiment, the 3rd capacitor has in about 80pF to the value about between 120pF.In an enforcement
In example, the 3rd capacitor has the value of about 100pF+/- about 1%.
In one embodiment, power input circuit includes：4th capacitor, it is coupled with RF sources；Second inducer, its
Couple with interior loop input circuit；5th capacitor, it is coupling between the 4th capacitor and the second inducer, secondary nodal point limit
It is scheduled between the 4th capacitor and the 5th capacitor；And the 6th capacitor, it is coupling between secondary nodal point and ground.At one
In embodiment, the 4th capacitor has in about 5pF to the rated value about between 500pF；Wherein described 5th electric capacity utensil
Have in about 50pF to the rated value about between 500pF；Second inducer has in about 0.3uH to about between 0.5uH
Value；And the 6th capacitor has in about 200pF to the value about between 300pF.In one embodiment, the 6th electric capacity
Utensil has the value of about 250pF+/- about 1%.
Description of the drawings
By referring to the explanation for providing below in conjunction with the accompanying drawings, the present invention and its further advantage can be best understood by.
Fig. 1 shows the plasma process system for etching operation according to an embodiment of the invention.
Fig. 2 is the sectional view of plasma process chamber according to an embodiment of the invention.
Fig. 3 shows top view according to an embodiment of the invention, it is schematically indicated go out interior loop and exterior loop.
Fig. 4 A are the schematic diagrams for illustrating the circuit topological structure of TCCT match circuits according to an embodiment of the invention.
Fig. 4 B are the rough schematic views for illustrating the part of TCCT match circuits according to an embodiment of the invention.
Fig. 5 is to illustrate the pass for being used for the ion concentration with TCP power of the configuration of various tops according to an embodiment of the invention
It is curve chart.
Fig. 6 shows four songs of the relation that ion concentration and radial distance is shown respectively according to an embodiment of the invention
Line chart.
Specific embodiment
A kind of TCCT match circuits are disclosed, it is used to etch Semiconductor substrate and shape during semiconductor device manufacture
Into layer on a semiconductor substrate.TCCT match circuits control the operation of TCP coils, and TCP coil arrangement performs erosion in wherein
The top of the dielectric window of the chamber at quarter.
In the following description, in order to provide complete understanding of the present invention, multiple concrete details are elaborated.However,
It will be apparent to one skilled in the art that can come in the case of some details not having in these details
Implement the present invention.In other examples, in order to avoid unnecessarily obscuring the present invention, known place is not explained
Reason operates and realizes details.
Fig. 1 shows the plasma process system for etching operation according to an embodiment of the invention.This is
System includes chamber 102 and dielectric window 106, and chamber 102 includes chuck 104.Chuck 104 can be for supporting in the presence of substrate
The electrostatic chuck of substrate.
Bias RF generator 160 is also show, it can be limited by one or more generators.Provided that multiple generations
Device, then different frequencies be implemented for various tuning characteristics.Offsets match circuit 162 is coupling in RF generators 160 and limit
Between the conductive plate of the component for determining chuck 104.Chuck 104 also includes the clamping for enabling chip and the electrostatic attraction electrode for going clamping.Extensively
Say, wave filter can be provided and DC clamps power supply in free burial ground for the destitute.Can also be provided for lifted chip away from chuck 104 other
Control system.Although not shown, pump be connected with chamber 102 with enable operation corona treatment during carry out vacuum control with
And remove gaseous by-product from chamber.
Dielectric window 106 can be limited by the material of Types of Pottery.Other dielectric materials are also possible, as long as they can
Bear the condition of conductor etching chamber.Typically, chamber scope about 50 degrees Celsius and about 120 degrees Celsius it
Between at a high temperature of work.Temperature will be depending on etch process operation and Ju Ti Pei Fang.Chamber 102 also will be in about 1 millitorr (mT)
Work under vacuum condition between about 100 millitorrs (mT).Although not shown, when erection of equipment is in cleaning room
Or when in manufacturing facility, chamber 102 typically couples with facility.Facility includes pipeline, and pipeline provides processing gas, vacuum, temperature
Degree control and environmental particles control.
When these erection of equipment are in target manufacturing facility, these facilities couple with chamber 102.In addition, chamber 102 can
To couple with transfer chamber, transfer chamber allows the robot to using conventional automatic technology semiconductor wafer be proceeded to and turned
Go out chamber 102.
Fig. 2 is the sectional view of the plasma process chamber according to embodiments of the invention.TCP coils are shown as including
Interior loop (IC) 122 and exterior loop (OC) 120.TCP coils are placed and are arranged in the top of dielectric window 106.
TCCT match circuits 124 enable the power to being supplied to interior loop and exterior loop and carry out dynamic tuning.TCP coils with
TCCT match circuits 124 are coupled, and TCCT match circuits 124 include the connection with interior loop 120 and exterior loop 122.In a reality
In applying example, TCCT match circuits 124 are configured to that TCP coils are tuned to be provided than exterior loop 120 more to interior loop 122
Many power.In another embodiment, TCCT match circuits 124 are configured to be tuned with to interior loop 122 TCP coils
The power more less than exterior loop 120 is provided.In another embodiment, there is provided will provide uniform to the power of interior loop and exterior loop
Power distribution and/or control substrate (that is, chip, when it is present) top radial distribution in ion concentration.In another enforcement
In example, processing parameter that semiconductor wafer to being arranged on chuck 104 performs etching and limit will be based upon to adjust outside line
Intensity tuning between circle and interior loop.
In one implementation, the TCCT match circuits (as discussed in more detail below) with variable condenser can be matched somebody with somebody
It is set to and automatically regulates to realize predetermined electric current ratio in two coils.It should be appreciated that circuit illustrated herein is provided
Tuning and regulation to expectation electric current ratio.In one embodiment, the scope of electric current ratio can be between 0.1 to 1.5.It is logical
Often, the ratio is referred to as transformer coupled capacitor tuning (TCCT) ratio.However, the setting of TCCT ratios is based on for one or many
The desired process of individual specific chip.
It should be appreciated that by providing tunable TCP coils, chamber 102 can be provided according to the process to be performed behaviour
Make to control the motility of ion concentration and the relation and radial ion density distribution of TCP power.
Although in addition, it should be noted that being referred to as TCCT match circuits in the disclosure, the use of the term should not
Restriction is defined as the scope of the circuit realized desired matching feature and provide tuning.In other embodiments, can conceive
Be to be implemented for for not having TCCT functions or tool according to the match circuit of principles described in this document and embodiment
There is the expectation matching feature of the plasma process system of fixed TCCT ratios.
Fig. 3 shows top view according to an embodiment of the invention, and it schematically shows interior loop 122 and outer
Coil 120.Shown top view represent be described as before example including exterior loop 120 and interior loop 122
Coil connection.Interior loop 122 includes the (IC of interior loop 11) and (IC of interior loop 22).Exterior loop 120 includes the (OC of exterior loop 11)
With (the OC of exterior loop 22).Connection between coil-end is illustrated relative to the circuit arranged in TCCT match circuits 124.There is provided
Diagram in Fig. 3 with show the interior loop with TCP coils that are using in chamber 102 according to an embodiment of the invention and
Each associated circular winding in exterior loop.As illustrated, interior loop IC1And IC2It is arranged to parallel spiral shell interlaced with each other
Rotation shape part.As illustrated, IC1And IC2Similar to a pair of arithmetic or spiral of Archimedes of essentially identical shape, but one
About 180 degree is rotated about the axis thereof relative to another.IC1Input terminal 300 and IC2Input terminal 302 position complete phase
It is right.In addition, IC1Lead-out terminal 304 and IC2Lead-out terminal 306 position it is completely relative.Exterior loop OC1And OC2Construction with
Interior loop IC1And IC2It is similar, define essentially similar parallel spiral shape interlaced with each other, and relative to each other rotate
Approximate 180 degree.OC1Input terminal 308 and OC2Input terminal 310 it is completely relative, and OC1Lead-out terminal 312 and OC2's
Lead-out terminal 314 is completely relative.In one embodiment, input and output side of interior loop and exterior loop is with substantial linear
Construction arrangement.It should be appreciated that the coil construction of other type gaps is possible.For example, can have and dome type knot is provided
The dimension coil of structure and other the coil-type structures in addition to flat coil distribution.
It has been noted that TCP coils are coupled with TCCT match circuits 124, TCCT match circuits 124 include and interior loop 120
With the connection of exterior loop 122.As illustrated, the input terminal 308 and 310 of exterior loop 120 is coupled with node 146, node 146 enters
And be connected with TCCT input circuits 320.The lead-out terminal of exterior loop 120 is connected with node 142, and node 142 is electric with TCCT outputs
Road 324 connects.Interior loop 122 makes its input terminal 300 and 302 be connected with node 140, node 140 then with TCCT input circuits
320 connections.The lead-out terminal 304 and 306 of interior loop 122 is connected with node 148, and node 148 connects with TCCT output circuits 324
Connect.TCCT input circuits receive the power from RF power sources 322.TCCT output circuits are grounded.
Fig. 4 A are the schematic diagrams for illustrating the circuit topological structure of TCCT match circuits according to an embodiment of the invention.RF sources
322 provide power to power input circuit 400.Variable condenser C1It is coupling between RF sources 322 and node 410.Node 410 with
Capacitor C2Connection, capacitor C2And then be grounded.Node 410 also with variable condenser C3Connection, variable condenser C3Further with electricity
Sensor L5Connection.Inducer L5Couple with node 412.In one embodiment, power input circuit 400 is by variable condenser C1、
Node 410, the capacitor C of ground connection2, variable condenser C3With inducer L5Limit, they are arranged in the way of describing.
Node 412 is coupled with each in interior loop input circuit 402 and exterior loop input circuit 404.In an enforcement
In example, interior loop input circuit 402 is by inducer L coupled to each other3With variable condenser C5Limit.Inducer L3It is coupling in section
Point 412 and variable condenser C5Between.Variable condenser C5Be connected with node 140 (figure 3 illustrates), node 140 so that with it is interior
The input terminal connection of coil.
With continued reference to Fig. 4 A, node 412 is also connected with exterior loop input circuit 404.In one embodiment, exterior loop is defeated
Enter circuit 404 by the variable condenser C coupled with node 4124Limit.Variable condenser C4Also it is connected (in figure 3 with node 146
Illustrate), node 146 is further connected with the input terminal of exterior loop.
In addition TCCT output circuits 324 are shown in Figure 4 A, it is by interior loop output circuit 406 and exterior loop output electricity
Road 408 limits.Interior loop output circuit 406 is connected (figure 3 illustrates) with node 148, and node 148 is further defeated with interior loop
Go out terminal connection.In one embodiment, interior loop output circuit 406 is limited by insertion ground connection.Exterior loop output circuit 408 with
Node 142 connects (figure 3 illustrates), and node 142 is further connected with the lead-out terminal of exterior loop.In one embodiment, outward
Coil output circuit is by the capacitor C being coupling between node 142 and ground7Limit.
In one embodiment, variable condenser C1It is rated for about between 5pF to 500pF.In one embodiment, may be used
Variodenser C2Specified is for about 250pF.In one embodiment, variable condenser C3It is set to about between 5pF to 500pF.
In one embodiment, inducer L5Specified is for about 0.3uH.In one embodiment, variable condenser C4It is rated in about 150pF
To between 1500pF.In one embodiment, inducer L3Specified is for about 0.55uH.In one embodiment, variable condenser C5
It is rated for about between 150pF to 1500pF.In one embodiment, capacitor C7Specified is for about 100pF.
TCCT match circuits 124 enable dynamic tuning variable condenser C1、C3、C4And C5With tune be supplied to interior loop and
The power of exterior loop.In one embodiment, being controlled by the processing controller being connected with the electron plate of chamber 102 can power transformation
Container C1、C3、C4And C5.Electron plate can be coupled with networked system, and networked system will be according to the desired place in concrete circulation
Manage operation to operate concrete handling routine.Therefore, electron plate can control the etching operation for performing in chamber 102, and control
Variable condenser C processed1、C3、C4And C5Concrete setting.
Fig. 4 B are the rough schematic views of the part for illustrating TCCT match circuits according to an embodiment of the invention.As schemed
Show, power input circuit 400 receives the power from RF power sources 322.Power input circuit 400 is connected with node 412.Interior lines
Circle input circuit 402 is coupling between node 412 and interior loop 122.Exterior loop input circuit 404 is coupling in node 412 and outer
Between coil 120.Interior loop 122 is connected with the interior loop output circuit 406 of ground connection.Exterior loop 120 is defeated with the exterior loop of ground connection
Go out circuit 408 to connect.
In a broad aspect, presently described TCCT Match circuits realize the raising of power efficiency.It is thought that by
Cause the parasitic capacitance on coil for the impact minimum of plasma to realize in design optimization.By quoting conjunction
And " the Power Efficiency Oriented Optimal Design of High delivered in the Maolin Long of this paper
Density CCP and ICP Sources for Semiconductor RF Plasma Processing Equipment”
Parasitism is studied and described in (IEEE Transaction on Plasma Science, in April, 2006, the 2nd phase of volume 34)
Impact of the electric capacity to RF power efficiencies.
With regard to interior loop, existing TCCT Match circuits have included outlet side inducer, which increase parasitism
Electric capacity and therefore reduce power efficiency.However, provided herein is embodiment in, interior loop output circuit is configured to pass through
Ground is connected, and interior loop input circuit is configured to include inducer L3.Parasitic capacitance is this reduced, therefore improves power effect
Rate and the low voltage for being conducive in interior loop.
With regard to exterior loop, existing TCCT Match circuits have been provided for relatively low output lateral capacitance.However,
Provided herein is embodiment in, exterior loop output circuit is configured to supply higher electric capacity, and this is reduced for set frequency
Impedance and there is provided relatively low voltage drop.
The table 1 being shown below provides RF performance datas according to an embodiment of the invention, and it designs original top RF
It is compared with modification top RF designs.
Table 1
As the data in table 1 are shown, for modification top, in the case of non-loaded (without plasma), interior loop
Q-value increase than original top.Therefore, RF power efficiencies are also improved.Therefore, under immunization with gD DNA vaccine, higher
Total Q-value of TCP coils is improve under TCCT, because exterior loop is dominant under relatively low TCCT.In addition, as shown by data, in load
It is significant that total RF power efficiencies in the case of (having plasma) are improved.
In a broad aspect, presently disclosed TCCT match circuits provide high power efficiency, represent for set work(
Rate amount, obtains more highdensity plasma.Additionally, by realizing high power efficiency, disclosed TCCT match circuits
Allow the voltage level at coil terminals relatively low.The ability run under low voltage at coil terminals is reduced and can clashed into
The acceleration of the ion on the surface of dielectric window.Its result is the reduction of the particle caused due to the sputtering of the particle from dielectric window
Generate.Table 2 below shows existing TCCT Match circuits and according to an embodiment of the invention TCCT match circuits
The comparison of the terminal voltage between design.
Table 2
Data in table 2 show TCCT match circuits according to an embodiment of the invention and existing TCCT match circuits
Between the RF voltage ratios for measuring compared with.In variable condenser C5Voltage V is measured and node 140 between3(illustrating in Figure 4 A), and
And voltage V3Represent the voltage at the input terminal of interior loop.In the lead-out terminal and capacitor C of exterior loop7Between measurement electricity
Pressure V4(also illustrating in Figure 4 A), and voltage V4Represent the voltage at the lead-out terminal of exterior loop.
As shown by data as shown in table 2, in TCCT Match circuits according to an embodiment of the invention significantly
Reduce coil terminals voltage.Because coil terminals voltage is reduced, embodiments of the invention can be in various conductor etch
So that dielectric window sputtering is minimized and also eliminates the coil electric arc that caused by terminal-ground overvoltage puts used in chamber
Electricity.
Fig. 5 is to illustrate pass of the ion concentration with TCP power for being used for various tip configurations according to an embodiment of the invention
It is curve chart.In the graph, represented for the drawing of different tip configurations by different shapes.Circle is corresponding to tool
There is the drawing on the original top in 0.1 inch of coil-window gap.Experiment condition is as follows：TCCT=1, SF6=50sccm, Ar=
200sccm, Ch.P=9mT, tip=160mm.Rhombus is matched corresponding to having according to the TCCT of embodiment described herein
Circuit and the drawing on the modification top with 0.1 inch of coil-window gap.It is square corresponding to 0.4 inch of coil-window
The drawing on the original top in gap.Triangle has 0.4 inch of coil-window gap corresponding to not having Faraday shield
The drawing on original top.
By the drawing (being represented by circle) on the original top with 0.1 inch of coil-window gap and with 0.1 inch of line
Circle-window gap modification top drawing (being represented by rhombus) be compared, it can be seen that modification top RF design provide than
Original top RF designs significantly high power efficiency.That is, for set TCP power, modification top provides notable
Higher ion concentration.By providing larger power efficiency, but with lower-wattage, it is possible to achieve with existing top TCCT
The plasma density of matched design equivalent.This function provides the life-span of the raising of TCCT match circuits, because part is received
To the effect of lower-wattage, and the particle because of dielectric window sputtering for also reducing as described above is generated.
Fig. 6 shows four curve charts, respectively illustrates the relation of ion concentration and radial distance.In the upper right side of Fig. 6
In the curve chart for illustrating, painting for the various TCCT values for being applied to the original top with 0.1 inch of coil-window gap is shown
Figure.For each drawing, TCP power=1000W.The drawing represented by rhombus is corresponding to TCCT=1.By the drawing of square expression
Corresponding to TCCT=0.5.By the drawing of triangular representation corresponding to TCCT=1.3.
In the curve chart shown in the upper left side of Fig. 6, show and be applied to that there is TCCT according to an embodiment of the invention
The drawing of the various TCCT values on match circuit and the modification top with 0.1 inch of coil-window gap.For each drawing,
TCP power=1000W.The drawing represented by rhombus is corresponding to TCCT=1.By the drawing of square expression corresponding to TCCT=0.5.
By the drawing of triangular representation corresponding to TCCT=1.3.
In the curve chart shown in the lower right of Fig. 6, the original in the coil-window gap for being applied to that there is 0.4 inch is shown
Beginning top various TCCT values drawing.The drawing represented by rhombus is corresponding to TCCT=1.By square expression drawing corresponding to
TCCT=0.5.By the drawing of triangular representation corresponding to TCCT=1.3.
In the curve chart shown in the lower left of Fig. 6, show and be applied to there is no Faraday shield but with 0.4 inch
Coil-window gap benchmark top various TCCT values drawing.The drawing represented by rhombus is corresponding to TCCT=1.By side
The drawing that shape is represented is corresponding to TCCT=0.5.By the drawing of triangular representation corresponding to TCCT=1.3.
Plot exhibits shown in Fig. 6, due to being incorporated to TCCT match circuits according to an embodiment of the invention obtained by
Plasma density is distributed more uniformly across on whole chip.
Although being described the present invention according to multiple embodiments, it should be understood that those skilled in the art exist
Read after description above and studying accompanying drawing it will be recognized that the various changes of the present invention, addition, displacement and equivalent.Cause
This, it is intended that including fall in the true spirit and scope of the present invention it is all such change, addition, displacement and
Equivalent.
Claims (16)
1. a kind of match circuit being coupling between RF sources and plasma chamber, the match circuit includes：
Power input circuit, the power input circuit is coupled with RF sources；
Interior loop input circuit, it is coupling between the power input circuit and the input terminal of interior loop, the interior loop
Input circuit includes the first inducer and the first variable condenser coupled in series with first inducer, and described first is electric
Sensor is connected to the power input circuit, and first variable condenser is connected to the input of the interior loop
Son, primary nodal point is limited between the power input circuit and the interior loop input circuit；
Interior loop output circuit, it is coupling between the lead-out terminal of the interior loop and ground, the interior loop output circuit limit
Fixed direct insertion connection, the direct insertion connection does not include inducer and is directly connected to ground；
Exterior loop input circuit, it is coupling between the primary nodal point and the input terminal of exterior loop, the exterior loop input
Circuit has the second variable condenser, and the exterior loop input circuit is further coupled to the power via the primary nodal point
Input circuit；
Exterior loop output circuit, it is coupling between the lead-out terminal of the exterior loop and ground, wherein exterior loop output electricity
Road includes the 3rd capacitor；
Wherein described primary nodal point segmentation is input into from the power of the power input circuit for being assigned to the interior loop
Circuit and the exterior loop input circuit, first variable condenser and second variable condenser are provided for adjusting
Electric current ratio between the interior loop and the exterior loop.
2. match circuit as claimed in claim 1,
Wherein described first variable condenser has the rated value between 150pF to 1500pF；And
And first inducer has the value between 0.3uH to 0.5uH.
3. match circuit as claimed in claim 1, wherein second variable condenser has between 150pF to 1500pF
Rated value.
4. match circuit as claimed in claim 1, wherein the 3rd capacitor has the value between 80pF to 120pF.
5. match circuit as claimed in claim 1, wherein the power input circuit includes：4th capacitor, its with it is described
RF sources couple；Second inducer, it is coupled with the interior loop input circuit；5th capacitor, it is electric that it is coupling in the described 4th
Between container and second inducer；Secondary nodal point, it is limited between the 4th capacitor and the 5th capacitor；
And the 6th capacitor, it is coupling between the secondary nodal point and ground.
6. match circuit as claimed in claim 5,
Wherein described 4th capacitor has the rated value between 5pF to 500pF；
Wherein described 5th capacitor has the rated value between 50pF to 500pF；
Wherein described second inducer has the value between 0.3uH to 0.5uH；
Wherein described 6th capacitor has the value between 200pF to 300pF.
7. a kind of match circuit, it includes：
Power input circuit, the power input circuit is coupled with RF sources；
Interior loop input circuit, it is coupling between the power input circuit and the input terminal of interior loop, the interior loop
Input circuit includes the first inducer and the first capacitor coupled in series with first inducer, first inducer
It is connected with the power input circuit, and first capacitor is connected with the input terminal of the interior loop, first
Node is limited between the power input circuit and the interior loop input circuit；
Interior loop output circuit, it is coupling between the lead-out terminal of the interior loop and ground, the interior loop output circuit limit
The fixed direct insertion with ground is connected；
Exterior loop input circuit, it is coupling between the primary nodal point and the input terminal of exterior loop；
Exterior loop output circuit, it is coupling between the lead-out terminal of the exterior loop and ground, the exterior loop output circuit bag
Include the second capacitor with the value more than 85pF；
Wherein described power input circuit includes：3rd capacitor, it is coupled with the RF sources；Second inducer, its with it is described
Interior loop input circuit is coupled；4th capacitor, it is coupling between the 3rd capacitor and second inducer；Second
Node, it is limited between the 3rd capacitor and the 4th capacitor；And the 5th capacitor, it is coupling in described
Between two nodes and ground.
8. match circuit as claimed in claim 7,
Wherein described first capacitor is the variable condenser with the rated value between 150pF to 1500pF；And
Wherein described first inducer has the value between 0.3uH to 0.5uH.
9. match circuit as claimed in claim 7, wherein the exterior loop input circuit includes the 6th capacitor.
10. match circuit as claimed in claim 9, wherein the 6th capacitor is between 150pF to 1500pF
Rated value variable condenser.
11. match circuits as claimed in claim 7,
Wherein described 3rd capacitor has the rated value between 5pF to 500pF；
Wherein described 4th capacitor has the rated value between 50pF to 500pF；
Wherein described second inducer has the value between 0.3uH to 0.5uH；
Wherein described 5th capacitor has the value between 200pF to 300pF.
A kind of 12. match circuits being coupling between RF sources and plasma chamber, the match circuit includes：
Power input circuit, the power input circuit is coupled with RF sources；
Interior loop input circuit, it is coupling between the power input circuit and the input terminal of interior loop, the interior loop
Input circuit includes the first inducer and the first variable condenser coupled in series with first inducer, and described first is electric
Sensor is connected with the power input circuit, and first variable condenser connects with the input terminal of the interior loop
Connect, primary nodal point is limited between the power input circuit and the interior loop input circuit；
Interior loop output circuit, it is coupling between the lead-out terminal of the interior loop and ground, the interior loop output circuit limit
Fixed direct insertion connection, the direct insertion connection does not include inducer and is directly connected to ground；
Exterior loop input circuit, it is coupling between the primary nodal point and the input terminal of exterior loop, the exterior loop input
Circuit includes the second variable condenser, and the exterior loop input circuit is further coupled to the power via the primary nodal point
Input circuit；
Exterior loop output circuit, it is coupling between the lead-out terminal of the exterior loop and ground, the exterior loop output circuit bag
Include the 3rd capacitor；
Wherein described primary nodal point segmentation is input into from the power of the power input circuit for being assigned to the interior loop
Circuit and the exterior loop input circuit, first variable condenser and second variable condenser are provided for adjusting
Electric current ratio between the interior loop and the exterior loop；
Wherein described power input circuit includes：4th capacitor, it is coupled with the RF sources；Second inducer, its with it is described
Interior loop input circuit is coupled；5th capacitor, it is coupling between the 4th capacitor and second inducer；Second
Node, it is limited between the 4th capacitor and the 5th capacitor；And the 6th capacitor, it is coupling in described
Between two nodes and ground.
13. match circuits as claimed in claim 12,
Wherein described first variable condenser has the rated value between 150pF to 1500pF；And
Wherein described first inducer has the value between 0.3uH to 0.5uH.
14. match circuits as claimed in claim 12, wherein second variable condenser have 150pF to 1500pF it
Between rated value.
15. match circuits as claimed in claim 12, wherein the 3rd capacitor has between 80pF to 120pF
Value.
16. match circuits as claimed in claim 12,
Wherein described 4th capacitor has the rated value between 5pF to 500pF；
Wherein described 5th capacitor has the rated value between 50pF to 500pF；
Wherein described second inducer has the value between 0.3uH to 0.5uH；
Wherein described 6th capacitor has the value between 200pF to 300pF.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/658,652 | 2012-10-23 | ||
| US13/658,652 US9293353B2 (en) | 2011-04-28 | 2012-10-23 | Faraday shield having plasma density decoupling structure between TCP coil zones |
| US201261747919P | 2012-12-31 | 2012-12-31 | |
| US61/747,919 | 2012-12-31 | ||
| US13/751,001 | 2013-01-25 | ||
| US13/751,001 US9059678B2 (en) | 2011-04-28 | 2013-01-25 | TCCT match circuit for plasma etch chambers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103780241A CN103780241A (en) | 2014-05-07 |
| CN103780241B true CN103780241B (en) | 2017-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310503860.2A Active CN103780241B (en) | 2012-10-23 | 2013-10-23 | TCCT match circuit for plasma etch chambers |
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| Country | Link |
|---|---|
| JP (1) | JP6289860B2 (en) |
| KR (1) | KR102031381B1 (en) |
| CN (1) | CN103780241B (en) |
| TW (2) | TWI650796B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110536533A (en) * | 2018-06-07 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Upper electrode system, plasma chamber and method of generating plasma |
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|---|---|---|---|---|
| US10332725B2 (en) * | 2015-03-30 | 2019-06-25 | Lam Research Corporation | Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network |
| US9515633B1 (en) * | 2016-01-11 | 2016-12-06 | Lam Research Corporation | Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers |
| CN108271307B (en) * | 2016-12-30 | 2019-11-05 | 中微半导体设备(上海)股份有限公司 | Inductance coupling plasma processing device and plasma generating device |
| KR102432857B1 (en) * | 2017-09-01 | 2022-08-16 | 삼성전자주식회사 | plasma processing apparatus and manufacturing method of semiconductor device using the same |
| JP7002268B2 (en) * | 2017-09-28 | 2022-01-20 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN108519559A (en) * | 2018-03-27 | 2018-09-11 | 上海尼诺电子设备有限公司 | Radio-frequency power supply detection device |
| CN113972125B (en) * | 2020-07-24 | 2022-07-29 | 江苏鲁汶仪器有限公司 | Plasma processing system and multi-section Faraday shielding device thereof |
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| Publication number | Publication date |
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| TW201432776A (en) | 2014-08-16 |
| TWI606482B (en) | 2017-11-21 |
| TWI650796B (en) | 2019-02-11 |
| KR20140051808A (en) | 2014-05-02 |
| JP2014089957A (en) | 2014-05-15 |
| TW201740427A (en) | 2017-11-16 |
| KR102031381B1 (en) | 2019-11-08 |
| CN103780241A (en) | 2014-05-07 |
| JP6289860B2 (en) | 2018-03-07 |
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