CN103779292B - A kind of preparation method of the chip cooling material based on Graphene - Google Patents
A kind of preparation method of the chip cooling material based on Graphene Download PDFInfo
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Abstract
The present invention provides a kind of preparation method of the chip cooling material based on Graphene, including step：One substrate is provided, prepares horizontal Graphene over the substrate；The substrate is placed in reaction chamber, is passed through reducing gas and is warming up to preset temperature, plasma pretreatment is carried out to the substrate then after evacuation being carried out to the reaction chamber；Holding is passed through reducing gas and is passed through growth gasses, grows vertical Graphene in the horizontal graphenic surface；Stop being passed through growth gasses, and make the reaction chamber cooling, then the horizontal Graphene and vertical Graphene are transferred to chip surface to be radiated.Device is worked the focus heat diffusion for producing to device surface using horizontal Graphene by the present invention, then using the specific surface area that vertical Graphene is larger, the heat of high-power die horizontal direction is diffused in surrounding by big specific surface area, so as to accelerate radiating efficiency.Present invention process is simple, it is easy to operate, and for preparing, environmental requirement is low.
Description
Technical field
The present invention relates to microelectronics technology, is related to a kind of preparation method of the chip cooling material based on Graphene,
More particularly to a kind of preparation method of the chip cooling material based on horizontal Graphene and vertical Graphene.
Background technology
With the development of the high-performance of microelectronic product, miniaturization, multifunction and low cost, electronic radiation problem is
Become the fast-developing important factor in order of restriction electronics industry.Such as weight of the functional design of more diversification, electronic product etc.
Problem, the solving the problems, such as of these problems will necessarily bring device to radiate, and the research of high performance Heat Conduction Material is extremely urgent.Mesh
Front people actively find new High-performance heat conduction material, and with Graphene as representative, New Two Dimensional crystalline material is single former because of which
The physical characteristics of the two dimensional crystal structure of sub- thickness and uniqueness become research focus in recent years.For Graphene, with prominent
The heat conductivility for going out（5000W/(m·K)）And extraordinary specific surface area（2630m2/g）, can apply the surface of solids etc.
Some good processing performances, are preferable high power electronic device heat sink materials.But refer to the cooling application of Graphene
Problem, its preparation method are in a Rapid development stage with the research of applicating skill, how adequately and reasonably using graphite
The high thermal conductivity of alkene, successfully applies it to power device field of radiating, is still a technical barrier urgently to be resolved hurrily.
It is applied in the field of power device radiating with regard to Graphene, the Graphene cooling application that generally studies now is main
It is transferred in high-power die using the graphene film of monolayer or multilamellar and is radiated for focus, and then probes into the different numbers of plies
The impact that the heat dispersion of graphene film radiates for die hot spots.This radiating mode is merely capable of the heat of die hot spots
Amount diffuses to adjacent material in a horizontal manner, is the speed for strengthening chip cooling to a certain extent.And vertically Graphene compared with
High specific surface area, advantageously in the radiating of device focus, the how radiating effect of more excellent utilization Graphene？Explore new
The Graphene material heat sink material preparation method of type structure, is still a problem demanding prompt solution.
Therefore, how using Graphene high heat conduction excellent properties so as to optimum by the heat transfer at die hot spots extremely
It is the problem of those skilled in the art's needs solution in the environment of surrounding.
Content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of chip based on Graphene dissipates
The preparation method of hot material, bad for solving the problems, such as in prior art that high-power die laterally and longitudinally radiates.
For achieving the above object and other related purposes, the present invention provides a kind of chip cooling material based on Graphene
Preparation method, the preparation method are at least comprised the following steps：
1）One substrate is provided, horizontal Graphene is prepared over the substrate using liquid phase stripping method；
2）The substrate is placed in reaction chamber, is passed through reducing gas and is warming up to after evacuation being carried out to the reaction chamber
Preset temperature, then carries out plasma pretreatment to the substrate；
3）Holding is passed through reducing gas and is passed through growth gasses, and the enhanced chemical vapor deposition of using plasma is in described
Horizontal graphenic surface grows vertical Graphene；
4）Stop being passed through growth gasses, and make the reaction chamber cooling, then by the horizontal Graphene and vertical Graphene
It is transferred to chip surface to be radiated.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the liquid phase
Stripping method is sol evenning machine spin-coating method or immersion czochralski method.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the level
Graphene is multilamellar.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the substrate
For Cu, Ni, SiO2In one kind.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the step
1）Middle prepare horizontal Graphene before also include the step of substrate is polished, cleans and is dried up.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the step
2）After evacuation, the vacuum of the reaction chamber is at least 3.5 × 10-5Pa.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the step
2）Described preset temperature is 500～1200 DEG C, and the range of flow of reducing gas is 30～100sccm, plasma pretreatment
Time be no less than 10min.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the step
2）The reducing gas being passed through is H2, the plasma that plasma pretreatment is adopted is for H plasmas.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the step
3）100～the 400W of plasma power of middle growth gasses, growth time is 10～240min, the flow of growth gasses is 5～
50sccm.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the growth
Gas is methane.
Used as a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, growth is described
Vertically after Graphene, be additionally included in the step of one layer of horizontal Graphene being prepared again on the vertical Graphene.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the step
4）Also include the step of being passed through noble gases in temperature-fall period.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the step
4）The middle transfer horizontal Graphene and vertical Graphene include to the process of chip surface to be radiated：
A, will growth have horizontal Graphene and the substrate of vertical graphene film to be placed in the container equipped with corrosive liquid, select
Property growth substrates described in erosion removal；
B, the etchant solution is repeatedly diluted using deionized water, until the corrosive liquid is all replaced into institute
State deionized water；
C, utilization chip to be radiated fish for horizontal Graphene and vertical graphene film, then strengthen institute by heat treatment
State horizontal Graphene and vertical Graphene and the combination for treating heat radiation chip.
As described above, the preparation method of the chip cooling material based on Graphene of the present invention, including step：There is provided one to serve as a contrast
Bottom, prepares horizontal Graphene over the substrate；The substrate is placed in reaction chamber, the reaction chamber is carried out after evacuation
It is passed through reducing gas and is warming up to preset temperature, plasma pretreatment is carried out to the substrate then；Holding is passed through also Primordial Qi
Body is simultaneously passed through growth gasses, and the enhanced chemical vapor deposition of using plasma grows vertical stone in the horizontal graphenic surface
Black alkene；Stop being passed through growth gasses, and make the reaction chamber cooling, then the horizontal Graphene and vertical Graphene are transferred to
Chip surface to be radiated.Device is worked the focus heat diffusion for producing to device surface using horizontal Graphene by the present invention,
Then using the specific surface area that vertical Graphene is larger, the heat of high-power die horizontal direction is expanded by big specific surface area
It is dissipated in surrounding, so as to accelerate radiating efficiency.The traditional technology of preparing of horizontal Graphene has still been continued to use in the invention, with
When suppress the horizontal film forming growth of Graphene, the present invention when vertical Graphene is grown by the potentiation of hydrogen gas plasma
Process is simple, it is easy to operate, for preparing, environmental requirement is low.
Description of the drawings
Fig. 1 is shown as the preparation method step 1 of the heat sink material based on Graphene of the present invention）The structural representation for being presented
Figure.
Fig. 2 is shown as the preparation method step 2 of the heat sink material based on Graphene of the present invention）The structural representation for being presented
Figure.
Fig. 3 is shown as the preparation method step 3 of the heat sink material based on Graphene of the present invention）The structural representation for being presented
Figure.
Fig. 4～Fig. 7 is shown as the preparation method step 4 of the heat sink material based on Graphene of the present invention）The knot for being presented
Structure schematic diagram.
Fig. 8 is shown as horizontal Graphene and vertical Graphene is applied to the horizontal and vertical radiating schematic diagram of die hot spots.
Fig. 9 is shown as soaking the method schematic diagram that czochralski method prepares horizontal Graphene.
Figure 10 is shown as the structural representation of the heat sink material of the preparation of the embodiment of the present invention two.
Figure 11 is shown as in the present invention high-power die circuit diagram comprising focus.
Figure 12 is shown as the horizontal Graphene of present invention preparation and the transfer of vertical graphene radiation material is applied to chip
Schematic diagram.
Component label instructions
101 substrates
102,104 horizontal Graphenes
103 vertical Graphenes
105 graphene solutions
201 containers
202 corrosive liquids
203 syringes
301 chips to be radiated
3011 focuses
Specific embodiment
Embodiments of the present invention are described below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different concrete realities
The mode of applying is carried out or applies, and the every details in this specification can also be based on different viewpoints and application, without departing from
Various modifications and changes are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, only show in schema with relevant component in the present invention rather than according to component count during actual enforcement, shape then
Shape and size are drawn, and which is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its component cloth
Office's kenel is likely to increasingly complex.
Embodiment one
The present invention provides a kind of preparation method of the chip cooling material based on Graphene, the chip based on Graphene
The preparation method of heat sink material is at least comprised the following steps：
1）One substrate is provided, horizontal Graphene is prepared over the substrate using liquid phase stripping method；
2）The substrate is placed in reaction chamber, is passed through reducing gas and is warming up to after evacuation being carried out to the reaction chamber
Preset temperature, then carries out plasma pretreatment to the substrate；
3）Holding is passed through reducing gas and is passed through growth gasses, and the enhanced chemical vapor deposition of using plasma is in described
Horizontal graphenic surface grows vertical Graphene；
4）Stop being passed through growth gasses, and make the reaction chamber cooling, then by the horizontal Graphene and vertical Graphene
It is transferred to chip surface to be radiated.
Below in conjunction with the accompanying drawings the preparation method of the chip cooling material of the Graphene of the present invention is described in detail.
Step 1 is first carried out）, as shown in Figure 1, there is provided a substrate 101, using liquid phase stripping method on the substrate 101
Prepare horizontal Graphene 102.
The substrate 101 can be Cu, Ni, SiO2One kind therein, in the present embodiment, by taking Cu substrates as an example.
Preferably, need the substrate 101 is polished successively, cleans and is dried up before preparing horizontal Graphene 102.
Specifically, it is processed by shot blasting first：Polishing solution is prepared, wherein, polishing solution Main Ingredients and Appearance is carbamide, phosphoric acid, ethanol, different
Propanol and deionized water；Then, with Cu substrates 101 as anode, with another Cu pieces as negative electrode, Cu is served as a contrast under the conditions of constant-current constant-temperatureself-injection
Bottom 101 is processed by shot blasting 1min or so, then deionized water, isopropanol cleaning successively；Then cleaned：It is respectively adopted
Cleaning solution dilute hydrochloric acid, isopropanol, deionized water successively to polishing after Cu substrates 101 be rinsed, finally dry up：Use N2
Air gun is dried up.The method of cleaning substrate 101 using different organic solvents and chooses whether ultrasound according to the difference of substrate 101
Cleaning.
The horizontal Graphene 102 is prepared using liquid phase stripping method, specially：Prepare solution first, choose appropriate stone
The graphene powder is dissolved in N-Methyl pyrrolidone by black alkene powder body（NMP）Or in sodium cholate, by being repeatedly centrifuged and surpassing
Sonication, is configured to the graphene solution that concentration is 0.1～1mg/mL；Then horizontal Graphene is prepared, by the graphite being configured to
Alkene solution, such as concentration are 0.1mg/mL graphite solution, carry out supersound process 10～20 minutes, and ultrasonic power is 120～180W.So
After prepare horizontal Graphene, prepare according to spin-coating method, step is：1～2 drop solution is drawn with Dispette and drops in target lining
On bottom, spin coating is carried out using sol evenning machine to substrate, rotating speed is 500～1500rpm, and the time is 30s, dries 150～200 DEG C, 2～
3 minutes, spin coating number of times 1～20 time.Prepare according to immersion czochralski method, step is：As shown in figure 9, substrate 101 is immersed in stone
About 1～3 minute in black alkene solution 105, substrate is then lifted in different directions, horizontal Graphene 102 is prepared and completed, substrate 101
The direction of lifting includes but is not limited to direction as shown in Figure 9.
It is multilamellar to prepare the horizontal Graphene 102 for being formed.
Then execution step 2）, as shown in Fig. 2 the substrate 101 is placed in reaction chamber, the reaction chamber is taken out
Reducing gas being passed through after vacuum and being warming up to preset temperature, plasma pretreatment is carried out to the substrate 101 then.
The substrate 101 that the preparation has horizontal Graphene 102 is placed in the high temperature furnace reaction chamber of anaerobic, by reaction chamber
It is evacuated to predetermined value.As an example, after evacuation, the vacuum of the reaction chamber is at least 3.5 × 10-5Pa.
As an example, the reducing gas being passed through is H2, the plasma that plasma pretreatment is adopted is for H plasmas.
Meanwhile, a certain amount of noble gases such as argon can be passed through, the two be adjusted and is passed through flow-rate ratio, so as to realize different growth substrates
101 pretreatment.
After being passed through reducibility gas, start to warm up up to temperature and reach preset temperature, according to the difference that experiment prepares sample
Demand, can carry out the growth experiment of different temperatures.As an example, described preset temperature is 500～1200 DEG C, reducing gas
Range of flow be 30～100sccm.
After constant temperature, the running voltage in reaction chamber is adjusted, such as, adjustment pressure opens radio frequency electrical to 5～1500Pa
Source, starts plasma pretreatment.As an example, the time of plasma pretreatment is no less than 10min.
Then execution step 3）, as shown in figure 3, keeping being passed through reducing gas and being passed through growth gasses, using plasma
Enhanced chemical vapor deposition is in the vertical Graphene 103 of 102 superficial growth of horizontal Graphene.
After pretreatment terminates, it is passed through growth gasses plasma and is given birth to by plasma chemical vapor deposition constant temperature
Long, growth time Different Effects are tested the pattern of the vertical Graphene sample for preparing and are applied to the radiating of die hot spots radiating
Efficiency.Growth regulation gas, makes the plasma power of the growth gasses select between 100～400W, growth time
Can select in the range of 10～240min, the range of flow of the growth gasses being passed through is 5～50sccm.
As an example, the growth gasses are methane, certainly, different according to experiment condition, or other are suitable
Growth gasses.
Last execution step 4）, as shown in Figure 4 to 7, stop being passed through growth gasses, and make the reaction chamber cooling, then
The horizontal Graphene 102 and vertical Graphene 103 are transferred to 301 surface of chip to be radiated.
Growth stops being passed through growth gasses after terminating, and closes plasma, be continually fed in cavity reducibility gas or
Reducing gas and the mixed gas of noble gases, and room temperature is cooled in vacuum condition.
Sample, the Graphene sample required for obtaining, i.e., horizontal Graphene 102 and vertical graphite is taken out after cooling terminates
Alkene 103, carries out different performance tests afterwards, and such as Raman spectrum test, scanning electron microscope etc. characterize graphenic surface
The information characteristics of pattern.
Shift the horizontal Graphene 102 and vertical Graphene 103 specifically to wrap to the process on 301 surface of chip to be radiated
Include：
As shown in figure 4, the substrate 101 that growth has 103 thin film of horizontal Graphene 102 and vertical Graphene is placed in dress first
Have in the container 201 of corrosive liquid 202, selective corrosion removes the substrate 101.In the present embodiment, the corrosive liquid 202 is
Marble solution（Solution compolision is：Dilute hydrochloric acid, copper sulfate, deionized water）.Growth there are horizontal Graphene 102 and vertical graphite
The growth substrates 101 of 103 thin film of alkene soak a period of time in the Marble solution, and Cu can be served as a contrast by generally more than 30min
Bottom 101 removes, as shown in Figure 5.
It should be noted that the horizontal Graphene 102 is thicker with the thickness of vertical Graphene 103（Generally 100nm～
4μm）, and the protection without PMMA glue in transfer process, cause Graphene sample easily because surface tension of water etc. is made
The moment rupture that sample departs from water is used in, so, the size of general prepared Graphene sample can not be less than 5*5mm2.
As shown in fig. 6, and then the corrosive liquid 202 is repeatedly diluted using deionized water, until by the corrosion
Liquid 202 is all replaced into the deionized water.
Specifically, the corrosive liquid 202 of part is replaced with through repeatedly extracting and injecting by deionization using syringe 203
Water, until all replace with pure deionized water by the corrosive liquid 202.
As shown in fig. 7,103 thin film of horizontal Graphene 102 and vertical Graphene is fished for using chip 301 to be radiated, so
Strengthen the combination of the horizontal Graphene 102 and vertical Graphene 103 and the chip 301 to be radiated afterwards by heat treatment.
After successfully fishing for, isopropanol reagent can be taken by drop, be adjusted between Graphene sample and chip 301 to be radiated
Position, then with permanent steady warm table with remaining liquid reagent in the temperature heating evaporation container that sets, it is ensured that horizontal Graphene
102 and vertical Graphene 103 combine closely with chip 301 to be radiated.
The chip 301 to be radiated includes silicon substrate, the silicon dioxide for being located at the surface of silicon and is grown in
The circuit structure of the silica surface, wherein, circuit structure to be radiated is defined as focus.
Figure 11 is shown as the circuit diagram of the chip to be radiated with focus 3011, and Figure 12 is shown as horizontal Graphene
102 and the schematic diagram that combined with chip 301 to be radiated of 103 thin film of vertical Graphene, wherein, 102 He of horizontal Graphene
Vertically 103 sample thin film of Graphene is covered on the focus 3011 of chip, the focus that device work is produced by horizontal Graphene 102
Heat diffusion to device surface, then using the specific surface area that vertical Graphene 103 is larger, by high-power die horizontal direction
Heat is diffused in surrounding by big specific surface area, is effectively increased the radiating of chip, core chip-level stone as shown in Figure 8
The heat dissipation direction schematic diagram of black alkene 102 and vertical Graphene 103.
Embodiment two
The present embodiment is with the difference of embodiment one, the vertical Graphene 103 that the present embodiment is prepared in embodiment one
Surface is prepared for one layer of horizontal Graphene 104 again, and as shown in Figure 10, the preparation method of this layer of horizontal Graphene 104 can be with reality
Apply prepare in example one horizontal Graphene 102 method identical.Specifically, the chip cooling material based on Graphene of the present embodiment
Preparation method the step of as follows：
1）One substrate 101 is provided, horizontal Graphene 102 is prepared on the substrate 101 using liquid phase stripping method；
2）The substrate 101 is placed in reaction chamber, is passed through reducing gas and rises after evacuation being carried out to the reaction chamber
Then temperature carries out plasma pretreatment to the substrate 101 to preset temperature；
3）Holding is passed through reducing gas and is passed through growth gasses, and the enhanced chemical vapor deposition of using plasma is in described
The vertical Graphene 103 of 102 superficial growth of horizontal Graphene；
4）Stop being passed through growth gasses, and make the reaction chamber cooling, on the vertical Graphene 103, then prepare one
The horizontal Graphene 104 of layer；
5）By the horizontal Graphene 102,104 and vertically, Graphene 103 is transferred to 301 surface of chip to be radiated again.
The present embodiment is by being sequentially prepared horizontal Graphene 102, vertical Graphene 103 and level on the substrate 101
Graphene 104, by the radiating of three layers of different directions, can meet the higher radiating requirements of chip.
In sum, the present invention provides a kind of preparation method of the chip cooling material based on Graphene, including step：Carry
For a substrate, horizontal Graphene is prepared over the substrate；The substrate is placed in reaction chamber, the reaction chamber is taken out
Reducing gas being passed through after vacuum and being warming up to preset temperature, plasma pretreatment is carried out to the substrate then；Holding is passed through
Reducing gas is simultaneously passed through growth gasses, and the enhanced chemical vapor deposition of using plasma is grown in the horizontal graphenic surface
Vertical Graphene；Stop being passed through growth gasses, and make the reaction chamber cooling, then by the horizontal Graphene and vertical Graphene
It is transferred to chip surface to be radiated.Device is worked the focus heat diffusion for producing to device using horizontal Graphene by the present invention
The heat of high-power die horizontal direction, then using the specific surface area that vertical Graphene is larger, is passed through big ratio table by surface
Area is diffused in surrounding, so as to accelerate radiating efficiency.The traditional preparation of horizontal Graphene has still been continued to use in the invention
Technology, while suppress the horizontal film forming life of Graphene when vertical Graphene is grown by the potentiation of hydrogen gas plasma
Long, present invention process is simple, it is easy to operate, and for preparing, environmental requirement is low.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle and its effect of above-described embodiment only illustrative present invention, of the invention not for limiting.Any ripe
The personage for knowing this technology all can carry out modifications and changes to above-described embodiment under the spirit and the scope without prejudice to the present invention.Cause
This, those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (13)
1. a kind of preparation method of the chip cooling material based on Graphene, it is characterised in that the system of the chip cooling material
Preparation Method is at least comprised the following steps：
1) substrate is provided, horizontal Graphene is prepared over the substrate using liquid phase stripping method；
2) substrate is placed in reaction chamber, be passed through reducing gas and be warming up to default after evacuation being carried out to the reaction chamber
Temperature, then carries out plasma pretreatment to the substrate；
3) keep being passed through reducing gas and being passed through growth gasses, the enhanced chemical vapor deposition of using plasma is in the level
Graphenic surface grows vertical Graphene；Graphite is suppressed by the potentiation of hydrogen gas plasma when vertical Graphene is grown
The horizontal film forming growth of alkene；
4) stop being passed through growth gasses, and make the reaction chamber cooling, then the horizontal Graphene and vertical Graphene are shifted
To chip surface to be radiated, make the focus of chip surface radiate in the horizontal direction by the horizontal Graphene, then pass through institute
It is perpendicular to the direction of the chip surface, so as to realize radiating that vertical Graphene is stated by the converting heat of horizontal direction.
2. the preparation method of the chip cooling material based on Graphene according to claim 1, it is characterised in that：The liquid
Phase stripping method is sol evenning machine spin-coating method or immersion czochralski method.
3. the preparation method of the chip cooling material based on Graphene according to claim 1, it is characterised in that：The water
Flat Graphene is multilamellar.
4. the preparation method of the chip cooling material based on Graphene according to claim 1, it is characterised in that：The lining
Bottom is Cu, Ni, SiO2In one kind.
5. the preparation method of the chip cooling material based on Graphene according to claim 1, it is characterised in that：The step
Rapid 1) in prepare horizontal Graphene before also include the step of substrate is polished successively, cleans and is dried up.
6. the preparation method of the chip cooling material based on Graphene according to claim 1, it is characterised in that：The step
Rapid 2) after evacuation, the vacuum of the reaction chamber is at least 3.5 × 10-5Pa.
7. the preparation method of the chip cooling material based on Graphene according to claim 6, it is characterised in that：The step
Rapid 2) described in preset temperature be 500～1200 DEG C, the range of flow of reducing gas is 30～100sccm, and plasma is located in advance
The time of reason is no less than 10min.
8. the preparation method of the chip cooling material based on Graphene according to claim 7, it is characterised in that：The step
The rapid reducing gas 2) being passed through is H2, the plasma that plasma pretreatment is adopted is for H plasmas.
9. the preparation method of the chip cooling material based on Graphene according to claim 1, it is characterised in that：The step
Rapid 3) in growth gasses 100～400W of plasma power, growth time is 10～240min, and the flow of growth gasses is 5
～50sccm.
10. the preparation method of the chip cooling material based on Graphene according to claim 9, it is characterised in that：Described
Growth gasses are methane.
The preparation method of the 11. chip cooling materials based on Graphene according to claim 1, it is characterised in that：Growth
After the vertical Graphene, be additionally included in the step of one layer of horizontal Graphene being prepared again on the vertical Graphene.
The preparation method of the 12. chip cooling materials based on Graphene according to claim 1, it is characterised in that：Described
Step 4) also include the step of being passed through noble gases in temperature-fall period.
The preparation method of the 13. chip cooling materials based on Graphene according to claim 1, it is characterised in that described
Step 4) in shift the horizontal Graphene and vertical Graphene and include to the process of chip surface to be radiated：
A, there are horizontal Graphene and the substrate of vertical graphene film to be placed in the container equipped with corrosive liquid growth, selectivity is rotten
Etching off removes the growth substrates；
B, the etchant solution is repeatedly diluted using deionized water, until the corrosive liquid is all replaced into described going
Ionized water；
C, utilization chip to be radiated fish for horizontal Graphene and vertical graphene film, then strengthen the water by heat treatment
Flat Graphene and vertical Graphene and the combination for treating heat radiation chip.
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