CN103779292A - Method for preparing graphene-based chip heat-radiating material - Google Patents
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Abstract
The present invention provides a method for preparing a graphene-based chip heat-radiating material, which comprises the steps of: providing a substrate on which horizontal graphene is prepared; placing the substrate in a reaction chamber, after vacuum pumping is performed on the reaction chamber, reducing gas is introduced into the reaction chamber and increasing the temperature to a preset temperature, and then performing plasma preprocessing on the substrate; introducing of the reducing gas is kept and furthermore growing gas is introduced for growing vertical graphene on the surface of the horizontal graphene; and stopping introduction of the growing gas and reducing temperature of the reaction chamber, and then transferring the horizontal graphene and the vertical graphene to the surface of the chip on which heat radiation is to be performed. According to the method, the hot spot heat which is generated by operation of the device is radiated to the surface of the device through the horizontal graphene, and then relatively large specific surface area of the vertical graphene is utilized for radiating heat of a large-power chip in the horizontal direction to surrounding environment through the large specific surface area, thereby improving heat radiating efficiency. The method for preparing the graphene-based chip heat-radiating material has advantages of: simple process, easy operation and low requirement for preparing environment.
Description
Technical field
The present invention relates to microelectronics technology, relate to a kind of preparation method of the chip cooling material based on Graphene, particularly relate to a kind of preparation method of the chip cooling material based on horizontal Graphene and vertical Graphene.
Background technology
Along with high-performance, microminiaturization, multifunction and the development cheaply of microelectronic product, electronic radiation problem has become the important factor in order of restriction electronics industry fast development.As problems such as the weight of the Functional Design of more diversification, electronic product, the solution of these problems will inevitably bring the problem of device heat radiation, and the research of high performance Heat Conduction Material is extremely urgent.At present people are actively finding new high-performance Heat Conduction Material, and take Graphene as representative, New Two Dimensional crystalline material becomes research focus in recent years because of two dimensional crystal structure and unique physical characteristic of its monatomic thickness.With regard to Graphene, there is outstanding heat conductivility (5000W/ (mK)) and extraordinary specific area (2630m
2/ g), can be applied in some good processing performances such as grade of the surface of solids, be desirable high power electronic device heat sink material.But refer to the cooling application problem of Graphene, the research of its preparation method and applicating skill is in a Rapid development stage, how adequately and reasonably to utilize the high thermal conductivity of Graphene, successfully apply it to power device field of radiating, be still a technical barrier urgently to be resolved hurrily.
Be applied to about Graphene in the field of power device heat radiation, now generally the Graphene cooling application of research mainly adopts the graphene film of individual layer or multilayer to be transferred in high-power die for focus heat radiation, and then the heat dispersion of graphene film of probing into the different numbers of plies is for the impact of die hot spots heat radiation.This radiating mode only can diffuse to material around in a horizontal manner by the heat of die hot spots, is the speed of having strengthened to a certain extent chip cooling.And the vertical higher specific area of Graphene is conducive to the heat radiation of device focus more, the how more excellent radiating effect that utilizes Graphene? the Graphene material heat sink material preparation method who explores new structure, is still a problem demanding prompt solution.
Therefore, thus how utilizing the optimum heat by die hot spots place of excellent properties of the high heat conduction of Graphene to be passed in environment is around the problem that those skilled in the art need to solve.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of the chip cooling material based on Graphene, for solving the laterally problem bad with longitudinal heat radiation of prior art high-power die.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of the chip cooling material based on Graphene, described preparation method at least comprises the following steps:
1) provide a substrate, adopt liquid phase stripping method on described substrate, to prepare horizontal Graphene;
2) described substrate is placed in to reaction chamber, after described reaction chamber is vacuumized, passes into reducing gas and be warming up to preset temperature, then described substrate is carried out to plasma preliminary treatment;
3) keep passing into reducing gas and passing into growth gasses, the chemical vapour deposition (CVD) that using plasma strengthens is in the vertical Graphene of described horizontal Graphene superficial growth;
4) stop passing into growth gasses, and make described reaction chamber cooling, more described horizontal Graphene and vertical Graphene are transferred to chip surface to be dispelled the heat.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, described liquid phase stripping method is sol evenning machine spin-coating method or soaks czochralski method.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, described horizontal Graphene is multilayer.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, described substrate is Cu, Ni, SiO
2in one.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, in described step 1), before the horizontal Graphene of preparation, also comprise the step that described substrate is carried out polishing, cleans and dried up.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, described step 2) after vacuumizing, the vacuum degree of described reaction chamber is at least 3.5 × 10
-5pa.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, described step 2) described preset temperature is 500～1200 ℃, the range of flow of reducing gas is 30～100sccm, and the pretreated time of plasma is no less than 10min.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, described step 2) reducing gas that passes into is H
2, the plasma that plasma preliminary treatment adopts is H plasma.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, the plasma power 100～400W of growth gasses in described step 3), growth time is 10～240min, the flow of growth gasses is 5～50sccm.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, described growth gasses is methane.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, after the described vertical Graphene of growing, be also included in the step of preparing again the horizontal Graphene of one deck on described vertical Graphene.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, in described step 4) temperature-fall period, also comprise the step that passes into inert gas.
As a kind of preferred version of the preparation method of the chip cooling material based on Graphene of the present invention, in described step 4), shift described horizontal Graphene and vertically Graphene to the process of chip surface to be dispelled the heat comprise:
A, by growth have horizontal Graphene and vertically the substrate of graphene film be placed in the container that corrosive liquid is housed, described growth substrates is removed in selective corrosion;
B, employing deionized water repeatedly dilute described etchant solution, until described corrosive liquid is all replaced into described deionized water;
C, utilize chip to be dispelled the heat to fish for horizontal Graphene and vertical graphene film, then by heat treatment strengthens described horizontal Graphene and vertically Graphene and described in treat the combination of heat radiation chip.
As mentioned above, the preparation method of the chip cooling material based on Graphene of the present invention, comprises step: a substrate is provided, prepares horizontal Graphene on described substrate; Described substrate is placed in to reaction chamber, after described reaction chamber is vacuumized, passes into reducing gas and be warming up to preset temperature, then described substrate is carried out to plasma preliminary treatment; Keep passing into reducing gas and passing into growth gasses, the chemical vapour deposition (CVD) that using plasma strengthens is in the vertical Graphene of described horizontal Graphene superficial growth; Stop passing into growth gasses, and make described reaction chamber cooling, more described horizontal Graphene and vertical Graphene are transferred to chip surface to be dispelled the heat.The present invention utilize horizontal Graphene by device work produce focus heat diffusion to device surface, then utilize the specific area that vertical Graphene is larger, the heat of high-power die horizontal direction is diffused in surrounding environment by large specific area, thereby accelerated radiating efficiency.The traditional technology of preparing of horizontal Graphene has still been continued to use in this invention, suppresses the horizontal film forming growth of Graphene in the time of the vertical Graphene of growth by the humidification of hydrogen gas plasma simultaneously, and technique of the present invention is simple, and easy operating is low for preparation environmental requirement.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation that preparation method's step 1) of the heat sink material based on Graphene of the present invention presents.
Fig. 2 is shown as preparation method's step 2 of the heat sink material based on Graphene of the present invention) structural representation that presents.
Fig. 3 is shown as the structural representation that preparation method's step 3) of the heat sink material based on Graphene of the present invention presents.
Fig. 4～Fig. 7 is shown as the structural representation that preparation method's step 4) of the heat sink material based on Graphene of the present invention presents.
Fig. 8 is shown as horizontal Graphene and vertical Graphene is applied to the horizontal and vertical heat radiation schematic diagram of die hot spots.
Fig. 9 is shown as and soaks the method schematic diagram that czochralski method is prepared horizontal Graphene.
Figure 10 is shown as the structural representation of heat sink material prepared by the embodiment of the present invention two.
Figure 11 is shown as the high-power die circuit diagram that comprises focus in the present invention.
Figure 12 is shown as horizontal Graphene prepared by the present invention and shifts with vertical graphene radiation material the schematic diagram being applied on chip.
Element numbers explanation
101 substrates
102,104 horizontal Graphenes
103 vertical Graphenes
105 graphene solutions
201 containers
202 corrosive liquids
203 syringes
301 chips to be dispelled the heat
3011 focuses
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
Embodiment mono-
The invention provides a kind of preparation method of the chip cooling material based on Graphene, the preparation method of the described chip cooling material based on Graphene at least comprises the following steps:
1) provide a substrate, adopt liquid phase stripping method on described substrate, to prepare horizontal Graphene;
2) described substrate is placed in to reaction chamber, after described reaction chamber is vacuumized, passes into reducing gas and be warming up to preset temperature, then described substrate is carried out to plasma preliminary treatment;
3) keep passing into reducing gas and passing into growth gasses, the chemical vapour deposition (CVD) that using plasma strengthens is in the vertical Graphene of described horizontal Graphene superficial growth;
4) stop passing into growth gasses, and make described reaction chamber cooling, more described horizontal Graphene and vertical Graphene are transferred to chip surface to be dispelled the heat.
The preparation method of the chip cooling material below in conjunction with accompanying drawing to Graphene of the present invention is elaborated.
First perform step 1), as shown in Figure 1, provide a substrate 101, adopt liquid phase stripping method on described substrate 101, to prepare horizontal Graphene 102.
Described substrate 101 can be Cu, Ni, SiO
2one wherein, in the present embodiment, take Cu substrate as example.
Preferably, before the horizontal Graphene 102 of preparation, need to carry out successively polishing, clean and dry up described substrate 101.Particularly, first carry out polishing: preparation polishing solution, wherein, polishing solution Main Ingredients and Appearance is urea, phosphoric acid, ethanol, isopropyl alcohol and deionized water; Then, take Cu substrate 101 as anode, take another Cu sheet as negative electrode, under constant current constant temperature, Cu substrate 101 is carried out to polishing 1min left and right, then clean with deionized water, isopropyl alcohol successively; Then clean: adopt respectively cleaning solution watery hydrochloric acid, isopropyl alcohol, deionized water successively the Cu substrate 101 after polishing to be rinsed, finally dry up: use N
2air gun dries up.Clean the method for substrate 101 according to the difference of substrate 101, use different organic solvents and select whether ultrasonic cleaning.
Adopt liquid phase stripping method to prepare described horizontal Graphene 102, be specially: first obtain solution, choose appropriate graphene powder, described graphene powder is dissolved in 1-METHYLPYRROLIDONE (NMP) or sodium taurocholate, by repeatedly centrifugal and ultrasonic processing, be configured to the graphene solution that concentration is 0.1～1mg/mL; Then prepare horizontal Graphene, by the graphene solution being mixed with, if concentration is 0.1mg/mL graphite solution, carry out ultrasonic processing 10～20 minutes, ultrasonic power is 120～180W.Then prepare horizontal Graphene, if adopt spin-coating method preparation, step is: draw 1～2 solution with Dispette and drop in target substrate, adopt sol evenning machine to carry out spin coating to substrate, rotating speed is 500～1500rpm, and the time is 30s, dries 150～200 ℃, 2～3 minutes, spin coating number of times 1～20 time.Soak czochralski method preparation if adopt, step is: as shown in Figure 9, substrate 101 is immersed in graphene solution 105 to approximately 1～3 minute, then lifts substrate with different directions, prepared by horizontal Graphene 102, the direction that substrate 101 lifts includes but not limited to direction as shown in Figure 9.
The horizontal Graphene 102 that preparation forms is multilayer.
Then perform step 2), as shown in Figure 2, described substrate 101 is placed in to reaction chamber, after described reaction chamber is vacuumized, pass into reducing gas and be warming up to preset temperature, then described substrate 101 is carried out to plasma preliminary treatment.
The described substrate 101 that is prepared with horizontal Graphene 102 is placed in the high temperature furnace reaction chamber of anaerobic, reaction chamber is evacuated to predetermined value.As example, after vacuumizing, the vacuum degree of described reaction chamber is at least 3.5 × 10
-5pa.
As example, the reducing gas passing into is H
2, the plasma that plasma preliminary treatment adopts is H plasma.Meanwhile, can pass into a certain amount of inert gas as argon gas, regulate the two to pass into flow-rate ratio, thereby realize the preliminary treatment of different growth substrates 101.
Pass into after reducibility gas, start heating direct to temperature and reach preset temperature, prepare the different demands of sample according to experiment, can carry out the growth experiment of different temperatures.As example, described preset temperature is 500～1200 ℃, and the range of flow of reducing gas is 30～100sccm.
After constant temperature, adjust the operating voltage in reaction chamber, such as, adjust pressure to 5～1500Pa, open radio-frequency power supply, start plasma preliminary treatment.As example, the pretreated time of plasma is no less than 10min.
Then perform step 3), as shown in Figure 3, keep passing into reducing gas and passing into growth gasses, the chemical vapour deposition (CVD) that using plasma strengthens is in the vertical Graphene 103 of described horizontal Graphene 102 superficial growth.
After preliminary treatment finishes, pass into growth gasses plasma and grow by plasma chemical vapor deposition constant temperature, growth time Different Effects is tested the pattern of the vertical Graphene sample of preparing and is applied to the radiating efficiency of die hot spots heat radiation.Growth regulation gas can be selected the plasma power of described growth gasses between 100～400W, and growth time can be selected within the scope of 10～240min, and the range of flow of the growth gasses passing into is 5～50sccm.
As example, described growth gasses is methane, certainly, according to experiment condition difference, can be also other suitable growth gasses.
Finally perform step 4), as shown in Figure 4 to 7, stop passing into growth gasses, and make described reaction chamber cooling, more described horizontal Graphene 102 and vertical Graphene 103 are transferred to chip to be dispelled the heat 301 surfaces.
After growth finishes, stop passing into growth gasses, close plasma, in cavity, continue to pass into the mist of reducibility gas or reducing gas and inert gas, and in vacuum condition, be cooled to room temperature.
After finishing, cooling takes out sample, obtain needed Graphene sample, be horizontal Graphene 102 and vertical Graphene 103, carry out afterwards different performance tests, such as the information characteristics of the sign Graphene surface topographies such as Raman spectrum test, scanning electron microscopy.
Shifting described horizontal Graphene 102 specifically comprises with vertical Graphene 103 to the process on chip to be dispelled the heat 301 surfaces:
As shown in Figure 4, first growth is had the substrate 101 of horizontal Graphene 102 and vertical Graphene 103 films to be placed in the container 201 that corrosive liquid 202 is housed, described substrate 101 is removed in selective corrosion.In the present embodiment, described corrosive liquid 202 is Marble solution (solution compolision is: watery hydrochloric acid, copper sulphate, deionized water).There is the growth substrates 101 of horizontal Graphene 102 and vertical Graphene 103 films to soak a period of time in described Marble solution growth, more than being generally 30min, Cu substrate 101 can be removed, as shown in Figure 5.
It should be noted that; the thickness of described horizontal Graphene 102 and vertical Graphene 103 is thicker (is generally 100nm～4 μ m); and in transfer process, there is no the protection of PMMA glue; cause Graphene sample and very easily break because the surface tension of water etc. act on the moment of sample disengaging water; so the size of general prepared Graphene sample can not be less than 5*5mm
2.
As shown in Figure 6, then adopt deionized water repeatedly to dilute described corrosive liquid 202, until described corrosive liquid 202 is all replaced into described deionized water.
Particularly, adopt syringe 203, through repeatedly extracting and injecting, the corrosive liquid 202 of part is replaced with to deionized water, until described corrosive liquid 202 is all replaced with to pure deionized water.
As shown in Figure 7, utilize chip to be dispelled the heat 301 to fish for horizontal Graphene 102 and vertical Graphene 103 films, then by heat treatment strengthens described horizontal Graphene 102 and vertically Graphene 103 and described in the combination of chip 301 to be dispelled the heat.
After successfully fishing for, can pass through fine-still isopropyl alcohol reagent, regulate the position between Graphene sample and chip 301 to be dispelled the heat, again with permanent steady heating station with remaining liquid reagent in the temperature heating evaporation container of setting, guarantee horizontal Graphene 102 and vertically Graphene 103 combine closely with chip 301 to be dispelled the heat.
Figure 11 is shown as the circuit diagram of the chip to be dispelled the heat with focus 3011, Figure 12 is shown as horizontal Graphene 102 and the vertical schematic diagram of Graphene 103 films and chip 301 combinations to be dispelled the heat, wherein, described horizontal Graphene 102 and vertically Graphene 103 sample thin films are covered on the focus 3011 of chip, the focus heat diffusion that horizontal Graphene 102 produces device work is to device surface, then utilize the larger specific area of vertical Graphene 103, the heat of high-power die horizontal direction is diffused in surrounding environment by large specific area, effectively increase the heat radiation of chip, the heat dissipation direction schematic diagram of horizontal Graphene 102 and vertical Graphene 103 on chip as shown in Figure 8.
Embodiment bis-
The difference of the present embodiment and embodiment mono-is, the horizontal Graphene 104 of one deck has been prepared on the surface of the vertical Graphene 103 that the present embodiment is prepared at embodiment mono-again, as shown in figure 10, the preparation method of this layer of horizontal Graphene 104 can be identical with the method for preparing horizontal Graphene 102 in embodiment mono-.Particularly, the preparation method's of the chip cooling material based on Graphene of the present embodiment step is as follows:
1) provide a substrate 101, adopt liquid phase stripping method on described substrate 101, to prepare horizontal Graphene 102;
2) described substrate 101 is placed in to reaction chamber, after described reaction chamber is vacuumized, passes into reducing gas and be warming up to preset temperature, then described substrate 101 is carried out to plasma preliminary treatment;
3) keep passing into reducing gas and passing into growth gasses, the chemical vapour deposition (CVD) that using plasma strengthens is in the vertical Graphene 103 of described horizontal Graphene 102 superficial growth;
4) stop passing into growth gasses, and make described reaction chamber cooling, then on described vertical Graphene 103, prepare the horizontal Graphene 104 of one deck;
5) more described horizontal Graphene 102,104 and vertical Graphene 103 are transferred to chip to be dispelled the heat 301 surfaces.
The present embodiment, by prepare successively horizontal Graphene 102, vertical Graphene 103 and horizontal Graphene 104 on described substrate 101, by the heat radiation of three layers of different directions, can meet the radiating requirements that chip is higher.
In sum, the invention provides a kind of preparation method of the chip cooling material based on Graphene, comprise step: a substrate is provided, on described substrate, prepares horizontal Graphene; Described substrate is placed in to reaction chamber, after described reaction chamber is vacuumized, passes into reducing gas and be warming up to preset temperature, then described substrate is carried out to plasma preliminary treatment; Keep passing into reducing gas and passing into growth gasses, the chemical vapour deposition (CVD) that using plasma strengthens is in the vertical Graphene of described horizontal Graphene superficial growth; Stop passing into growth gasses, and make described reaction chamber cooling, more described horizontal Graphene and vertical Graphene are transferred to chip surface to be dispelled the heat.The present invention utilize horizontal Graphene by device work produce focus heat diffusion to device surface, then utilize the specific area that vertical Graphene is larger, the heat of high-power die horizontal direction is diffused in surrounding environment by large specific area, thereby accelerated radiating efficiency.The traditional technology of preparing of horizontal Graphene has still been continued to use in this invention, suppresses the horizontal film forming growth of Graphene in the time of the vertical Graphene of growth by the humidification of hydrogen gas plasma simultaneously, and technique of the present invention is simple, and easy operating is low for preparation environmental requirement.
So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (13)
1. a preparation method for the chip cooling material based on Graphene, is characterized in that, the preparation method of described chip cooling material at least comprises the following steps:
1) provide a substrate, adopt liquid phase stripping method on described substrate, to prepare horizontal Graphene;
2) described substrate is placed in to reaction chamber, after described reaction chamber is vacuumized, passes into reducing gas and be warming up to preset temperature, then described substrate is carried out to plasma preliminary treatment;
3) keep passing into reducing gas and passing into growth gasses, the chemical vapour deposition (CVD) that using plasma strengthens is in the vertical Graphene of described horizontal Graphene superficial growth;
4) stop passing into growth gasses, and make described reaction chamber cooling, more described horizontal Graphene and vertical Graphene are transferred to chip surface to be dispelled the heat.
2. the preparation method of the chip cooling material based on Graphene according to claim 1, is characterized in that: described liquid phase stripping method is sol evenning machine spin-coating method or soaks czochralski method.
3. the preparation method of the chip cooling material based on Graphene according to claim 1, is characterized in that: described horizontal Graphene is multilayer.
4. the preparation method of the chip cooling material based on Graphene according to claim 1, is characterized in that: described substrate is Cu, Ni, SiO
2in one.
5. the preparation method of the chip cooling material based on Graphene according to claim 1, is characterized in that: in described step 1), before the horizontal Graphene of preparation, also comprise the step that described substrate is carried out polishing successively, cleans and dry up.
6. the preparation method of the chip cooling material based on Graphene according to claim 1, is characterized in that: described step 2) after vacuumizing, the vacuum degree of described reaction chamber is at least 3.5 × 10
-5pa.
7. the preparation method of the chip cooling material based on Graphene according to claim 6, it is characterized in that: described step 2) described preset temperature is 500～1200 ℃, the range of flow of reducing gas is 30～100sccm, and the pretreated time of plasma is no less than 10min.
8. the preparation method of the chip cooling material based on Graphene according to claim 7, is characterized in that: described step 2) reducing gas that passes into is H
2, the plasma that plasma preliminary treatment adopts is H plasma.
9. the preparation method of the chip cooling material based on Graphene according to claim 1, it is characterized in that: the plasma power 100～400W of growth gasses in described step 3), growth time is 10～240min, and the flow of growth gasses is 5～50sccm.
10. the preparation method of the chip cooling material based on Graphene according to claim 9, is characterized in that: described growth gasses is methane.
The preparation method of the 11. chip cooling materials based on Graphene according to claim 1, is characterized in that: after the described vertical Graphene of growing, be also included in the step of preparing again the horizontal Graphene of one deck on described vertical Graphene.
The preparation method of the 12. chip cooling materials based on Graphene according to claim 1, is characterized in that: in described step 4) temperature-fall period, also comprise the step that passes into inert gas.
The preparation method of the 13. chip cooling materials based on Graphene according to claim 1, is characterized in that, shifts described horizontal Graphene and comprise with vertical Graphene to the process of chip surface to be dispelled the heat in described step 4):
A, by growth have horizontal Graphene and vertically the substrate of graphene film be placed in the container that corrosive liquid is housed, described growth substrates is removed in selective corrosion;
B, employing deionized water repeatedly dilute described etchant solution, until described corrosive liquid is all replaced into described deionized water;
C, utilize chip to be dispelled the heat to fish for horizontal Graphene and vertical graphene film, then by heat treatment strengthens described horizontal Graphene and vertically Graphene and described in treat the combination of heat radiation chip.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104086223A (en) * | 2014-07-23 | 2014-10-08 | 湖南元素密码石墨烯研究院（有限合伙） | Manufacturing method of efficient cooling ceramic substrate for LEDs |
| CN104609405A (en) * | 2015-01-09 | 2015-05-13 | 上海大学 | Preparation method of vertically arrayed graphene thin films |
| CN104674189A (en) * | 2014-11-19 | 2015-06-03 | 浙江汉脑数码科技有限公司 | Plasma-enhanced chemical vapor deposition preparation method of multi-layered graphene film |
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| CN111994899A (en) * | 2020-07-22 | 2020-11-27 | 中国科学院宁波材料技术与工程研究所 | Large-area rapid preparation method of graphene with vertical structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010062333A (en) * | 2008-09-03 | 2010-03-18 | Fujitsu Ltd | Integrated circuit device and method of manufacturing the same |
| CN102354610A (en) * | 2011-08-23 | 2012-02-15 | 吉林大学 | Method for preparing combined electrode material of graphite/cobalt hydroxide super capacitor |
| CN103121670A (en) * | 2013-02-19 | 2013-05-29 | 西安交通大学 | Method for low-temperature growth of graphene by remote plasma reinforced atomic layer deposition |
-
2013
- 2013-12-31 CN CN201310753532.8A patent/CN103779292B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010062333A (en) * | 2008-09-03 | 2010-03-18 | Fujitsu Ltd | Integrated circuit device and method of manufacturing the same |
| CN102354610A (en) * | 2011-08-23 | 2012-02-15 | 吉林大学 | Method for preparing combined electrode material of graphite/cobalt hydroxide super capacitor |
| CN103121670A (en) * | 2013-02-19 | 2013-05-29 | 西安交通大学 | Method for low-temperature growth of graphene by remote plasma reinforced atomic layer deposition |
Non-Patent Citations (1)
| Title |
|---|
| 袁小亚: "石墨烯的制备研究进展", 《无机材料学报》, vol. 26, no. 6, 30 June 2011 (2011-06-30), pages 561 - 570 * |
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