CN103756588B - 用于微电子器件的压敏胶带 - Google Patents

用于微电子器件的压敏胶带 Download PDF

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CN103756588B
CN103756588B CN201410036328.9A CN201410036328A CN103756588B CN 103756588 B CN103756588 B CN 103756588B CN 201410036328 A CN201410036328 A CN 201410036328A CN 103756588 B CN103756588 B CN 103756588B
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CN103756588A (zh
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金闯
杨晓明
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Taicang Sidike New Material Science and Technology Co Ltd
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Suzhou Sidike New Material Science and Technology Co Ltd
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Priority to CN201610116969.4A priority patent/CN106118518A/zh
Priority to CN201610116966.0A priority patent/CN106433500A/zh
Priority to CN201610116970.7A priority patent/CN106118519A/zh
Priority to CN201610119322.7A priority patent/CN106393842B/zh
Priority to CN201610116967.5A priority patent/CN106118517B/zh
Priority to CN201610119265.2A priority patent/CN106118520B/zh
Priority to CN201610116960.3A priority patent/CN106118516B/zh
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Abstract

本发明公开一种用于微电子器件的压敏胶带，贴合于发热部件表面，石墨层通过以下工艺方法获得：聚酰亚胺薄膜的上、下表面均涂覆一层石墨改性剂获得处理后的聚酰亚胺薄膜；石墨改性剂由以下重量份的组分组成：均苯四甲酸二酐25~30份，二苯甲酮四酸二酐10~15份，二氨基二苯甲烷20~28份，二甲基甲酰胺20~25份，N-甲基吡咯烷酮8~10份，乙二醇1.5~2.5份，聚二甲基硅氧烷2~3份；将处理后的聚酰亚胺薄膜升温至800℃，保温后在升温至1200℃从而获得预烧制的碳化膜；采用压延机压延所述步骤四的预烧制的碳化膜。本发明实现了胶带导热性能的均匀性的同时，提高了产品的散热性能稳定性、可靠性，大大降低了产品的成本。

Description

用于微电子器件的压敏胶带
技术领域
本发明涉及一种用于微电子器件的压敏胶带，属于散热贴膜技术领域。
背景技术
随着现代微电子技术高速发展，电子设备（如笔记本电脑、手机、平板电脑等）日益变得超薄、轻便，这种结构使得电子设备内部功率密度明显提高，运行中所产生的热量不易排出、易于迅速积累而形成高温。另一方面，高温会降低电子设备的性能、可靠性和使用寿命。因此，当前电子行业对于作为热控***核心部件的散热材料提出越来越高的要求，迫切需要一种高效导热、轻便的材料迅速将热量传递出去，保障电子设备正常运行。
现有技术中聚酰亚胺薄膜大多用于柔性电路板，虽然有采用聚酰亚胺薄膜烧结获得石墨散热片，从而贴覆在热源上，但是受限于聚酰亚胺薄膜的产品质量和性能的良莠不齐，影响到了散热双面贴膜散热性能的发挥，存在以下技术问题：散热不均匀，易出现胶带局部过热，提高了产品的散热性能不稳定、可靠性性能差，不利于产品质量管控，影响产品的竞争力。
发明内容
本发明目的是提供一种用于微电子器件的压敏胶带，该散热贴膜在垂直方向和水平方向均提高了导热性能，避免胶带局部过热，实现了胶带导热性能的均匀性的同时，提高了产品的散热性能稳定性、可靠性，大大降低了产品的成本。
为达到上述目的，本发明采用的技术方案是：一种用于微电子器件的压敏胶带，所述散热贴膜贴合于发热部件表面，所述散热贴膜包括石墨层、位于石墨层表面的导热胶粘层和离型材料层，此离型材料层贴合于导热胶粘层与石墨层相背的表面；所述石墨层通过以下工艺方法获得，此工艺方法包括以下步骤：
步骤一、将聚酰亚胺薄膜从室温升至250℃，保温后升至400℃后将至室温；
步骤二、在经过步骤一的聚酰亚胺薄膜的上、下表面均涂覆一层石墨改性剂获得处理后的聚酰亚胺薄膜，所述石墨改性剂的粘度为30000~48000CP；
所述石墨改性剂由以下重量份的组分组成：
均苯四甲酸二酐25~30份，
二苯甲酮四酸二酐10~15份，
二氨基二苯甲烷20~28份，
二甲基甲酰胺20~25份，
N-甲基吡咯烷酮8~10份，
乙二醇1.5~2.5份，
聚二甲基硅氧烷2~3份；
步骤三、将处理后的聚酰亚胺薄膜升温至800℃，保温后在升温至1200℃，保温后冷却，从而获得预烧制的碳化膜；
步骤四、采用压延机压延所述步骤四的预烧制的碳化膜；
步骤五、升温至2400℃，保温后再升温至2900℃，保温后冷却，从而获得主烧制的石墨膜；
步骤六、然后将步骤五所得的主烧制的石墨膜进行压延从而获得所述石墨层。
上述技术方案中进一步改进的方案如下：
1、上述方案中，所述石墨改性剂由以下重量份的组分组成：
均苯四甲酸二酐26~28份，
二苯甲酮四酸二酐12~14份，
二氨基二苯甲烷22~26份，
二甲基甲酰胺20~25份，
N-甲基吡咯烷酮8~10份，
乙二醇1.8~2.5份，
聚二甲基硅氧烷2.5~3份。
2、上述方案中，所述石墨层通过以下工艺方法获得，此工艺方法包括以下步骤：
步骤一、将聚酰亚胺薄膜以4~6度/min速度从室温升至250℃，保持0.9~1.1小时，然后以2.5~3.5度/min，升至400℃，保持1小时后将至室温；
步骤二、在经过步骤一的聚酰亚胺薄膜的上、下表面均涂覆一层石墨改性剂获得处理后的聚酰亚胺薄膜；
步骤三、以4~6度/min的速度升至800℃，保持0.9~1.1小时；再以9~11度/min的速度升至1200℃，保存0.9~1.1小时后冷却，从而获得预烧制的碳化膜；
步骤四、采用压延机压延所述步骤四的预烧制的碳化膜；
步骤五、以19~21度/min的速度升至2400℃，保持0.9~1.1小时，再以19~21度/min的速度升至2900℃，保持1.8~2.2小时后冷却，从而获得主烧制的石墨膜；
步骤六、然后步骤五所得的主烧制的石墨膜进行压延从而获得所述石墨层（6）。
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：
1、本发明用于微电子器件的压敏胶带，其结构中石墨层由上、下表面均涂覆一层石墨改性剂的聚酰亚胺薄膜制备而成，提高了在垂直方向和水平方向的导热性能，避免胶带局部过热，实现了胶带导热性能的均匀性；其次，其位于聚酰亚胺薄膜表面的石墨改性剂由二苯甲酮四酸二酐20~25份、均苯四甲酸二酐12~18份、二氨基二苯甲烷20~28份、二甲基甲酰胺20~25份、N-甲基吡咯烷酮8~10份、乙二醇1.5~2.5份、聚二甲基硅氧烷2~3份组成，涂覆于聚酰亚胺薄膜上，填充了加热过程中的针孔，提高了结晶度同时，也克服了热收缩过大导致的不均匀，提高了石墨层双向拉伸性能。
2、本发明用于微电子器件的压敏胶带，其位于聚酰亚胺薄膜表面的石墨改性剂由二苯甲酮四酸二酐20~25份、均苯四甲酸二酐12~18份、二氨基二苯甲烷20~28份、二甲基甲酰胺20~25份、N-甲基吡咯烷酮8~10份、乙二醇1.5~2.5份
、聚二甲基硅氧烷2~3份组成，采用二甲基甲酰胺20~25份、N-甲基吡咯烷酮8~10份降低了共沸点并且平滑的沸点区，改善了最终产品成膜的平坦性和柔韧性；其次，聚酰亚胺薄膜表面具有石墨改性剂，改善了双面贴膜中石墨层与导热胶粘层导热性能，且采用压延机压延所述预烧制的碳化膜，避免了褶皱和石墨化烧结过程中的体积收缩，提高了致密性和结晶度，进一步提高了在垂直方向和水平方向的导热性能。
3、本发明用于微电子器件的压敏胶带，先将聚酰亚胺薄膜升至400℃亚胺化后，再预烧制的碳化膜和石墨化之间增加压延步骤，以及再形成导热石墨贴片后再次压延，避免了褶皱和石墨化烧结过程中的体积收缩，提高了致密性和结晶度，进一步提高了在垂直方向和水平方向的导热性能。
附图说明
附图1为本发明用于微电子器件的压敏胶带结构示意图；
附图2为本发明用于微电子器件的压敏胶带应用示意图。
以上附图中：1、发热部件；2、石墨层；3、导热胶粘层；4、离型材料层。
具体实施方式
下面结合实施例对本发明作进一步描述：
实施例：一种用于微电子器件的压敏胶带，所述散热贴膜贴合于发热部件1表面，所述散热贴膜包括石墨层2、位于石墨层2表面的导热胶粘层3和离型材料层4，此离型材料层4贴合于导热胶粘层3与石墨层2相背的表面；所述石墨层2通过以下工艺方法获得，此工艺方法包括以下步骤：
步骤一、将聚酰亚胺薄膜以4~6度/min速度从室温升至250℃，保持0.9~1.1小时，然后以2.5~3.5度/min，升至400℃，保持1小时后将至室温；
步骤二、在经过步骤一的聚酰亚胺薄膜的上、下表面均涂覆一层石墨改性剂获得处理后的聚酰亚胺薄膜，所述石墨改性剂由以下重量份的组分组成，如表1所示：
表1
实施例1 实施例2 实施例3 实施例4 实施例5
均苯四甲酸二酐 28.5 25.5 28 30 26
二苯甲酮四酸二酐 12.5 12 13.5 14 10
二氨基二苯甲烷 26 24 25 22 20
二甲基甲酰胺 22 22.5 24 21 23
N-甲基吡咯烷酮 8.5 6 9 7 8
乙二醇 1.5 1.8 2.2 1.6 2.5
聚二甲基硅氧烷 2 2.5 2.2 2.8 3
注：实施例1的石墨改性剂的粘度为32000CP，实施例2的石墨改性剂的粘度为35000CP，实施例3的石墨改性剂的粘度为38000CP，实施例4的石墨改性剂的粘度为42000CP，实施例5的石墨改性剂的粘度为45000CP。
步骤三、以4~6度/min的速度升至800℃，保持0.9~1.1小时；再以9~11度/min的速度升至1200℃，保存0.9~1.1小时后冷却，从而获得预烧制的碳化膜；
步骤四、采用压延机压延所述步骤四的预烧制的碳化膜；
步骤五、以19~21度/min的速度升至2400℃，保持0.9~1.1小时，再以19~21度/min的速度升至2900℃，保持1.8~2.2小时后冷却，从而获得主烧制的石墨膜；
步骤六、然后将步骤五所得的主烧制的石墨膜进行压延从而获得所述石墨层6。
采用上述用于微电子器件的压敏胶带时，其结构中石墨层由上、下表面均涂覆一层石墨改性剂的聚酰亚胺薄膜制备而成，提高了在垂直方向和水平方向的导热性能，避免胶带局部过热，实现了胶带导热性能的均匀性；其次，其位于聚酰亚胺薄膜表面的石墨改性剂由二苯甲酮四酸二酐20~25份、均苯四甲酸二酐12~18份、二氨基二苯甲烷20~28份、二甲基甲酰胺20~25份、N-甲基吡咯烷酮8~10份、乙二醇1.5~2.5份、聚二甲基硅氧烷2~3份组成，涂覆于聚酰亚胺薄膜上，填充了加热过程中的针孔，提高了结晶度同时，也克服了热收缩过大导致的不均匀，提高了石墨层双向拉伸性能，也降低了共沸点并且平滑的沸点区，改善了最终产品成膜的平坦性和柔韧性；再次，聚酰亚胺薄膜表面具有石墨改性剂，改善了双面贴膜中石墨层与导热胶粘层导热性能，且先将聚酰亚胺薄膜升至400℃亚胺化后，再预烧制的碳化膜和石墨化之间增加压延步骤，以及再形成导热石墨贴片后再次压延，避免了褶皱和石墨化烧结过程中的体积收缩，提高了致密性和结晶度，进一步提高了在垂直方向和水平方向的导热性能。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (2)

1.一种用于微电子器件的压敏胶带，所述压敏胶带贴合于发热部件（1）表面，所述压敏胶带包括石墨层（2）、位于石墨层（2）表面的导热胶粘层（3）和离型材料层（4），此离型材料层（4）贴合于导热胶粘层（3）与石墨层（2）相背的表面；其特征在于：所述石墨层（2）通过以下工艺方法获得，此工艺方法包括以下步骤：
步骤一、将聚酰亚胺薄膜从室温升至250℃，保温后升至400℃后降至室温；
步骤二、在经过步骤一的聚酰亚胺薄膜的上、下表面均涂覆一层石墨改性剂获得处理后的聚酰亚胺薄膜，所述石墨改性剂的粘度为30000~48000cP；
所述石墨改性剂由以下重量份的组分组成：
均苯四甲酸二酐25~30份，
二苯甲酮四酸二酐10~15份，
二氨基二苯甲烷20~28份，
二甲基甲酰胺20~25份，
N-甲基吡咯烷酮8~10份，
乙二醇1.5~2.5份，
聚二甲基硅氧烷2~3份；
步骤三、将处理后的聚酰亚胺薄膜升温至800℃，保温后在升温至1200℃，保温后冷却，从而获得预烧制的碳化膜；
步骤四、采用压延机压延所述步骤三的预烧制的碳化膜；
步骤五、升温至2400℃，保温后再升温至2900℃，保温后冷却，从而获得主烧制的石墨膜；
步骤六、然后将步骤五所得的主烧制的石墨膜进行压延从而获得所述石墨层（2）。
2.根据权利要求1所述的压敏胶带，其特征在于：所述石墨层（2）通过以下工艺方法获得，此工艺方法包括以下步骤：
步骤一、将聚酰亚胺薄膜以4~6度/min速度从室温升至250℃，保持0.9~1.1小时，然后以2.5~3.5度/min，升至400℃，保持1小时后降至室温；
步骤二、在经过步骤一的聚酰亚胺薄膜的上、下表面均涂覆一层石墨改性剂获得处理后的聚酰亚胺薄膜；
步骤三、以4~6度/min的速度升至800℃，保持0.9~1.1小时；再以9~11度/min的速度升至1200℃，保存0.9~1.1小时后冷却，从而获得预烧制的碳化膜；
步骤四、采用压延机压延所述步骤三的预烧制的碳化膜；
步骤五、以19~21度/min的速度升至2400℃，保持0.9~1.1小时，再以19~21度/min的速度升至2900℃，保持1.8~2.2小时后冷却，从而获得主烧制的石墨膜；
步骤六、然后步骤五所得的主烧制的石墨膜进行压延从而获得所述石墨层（2）。
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CN103059761A (zh) * 2012-12-28 2013-04-24 斯迪克新型材料（江苏）有限公司 高导热系数的石墨散热胶带

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