CN103744213B - A kind of array base palte and preparation method thereof - Google Patents
A kind of array base palte and preparation method thereof Download PDFInfo
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- CN103744213B CN103744213B CN201310736155.7A CN201310736155A CN103744213B CN 103744213 B CN103744213 B CN 103744213B CN 201310736155 A CN201310736155 A CN 201310736155A CN 103744213 B CN103744213 B CN 103744213B
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- base palte
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Abstract
The present invention provides a kind of array base palte and preparation method thereof, belong to display field, it can solve to hold via in prior art on organic film owing to organic film is thicker and the open area above it can be caused relatively deep, thus causes the section difference of each functional layer follow-up relatively greatly, the problem that liquid crystal aligning is bad.The array base palte of the present invention, described array base palte includes the organic film being arranged on substrate, described organic film has the first via area, has open area on the direction away from substrate of the first described via area, and described open area is provided with the first metal layer.Owing to the first metal layer is filled with open area, it is poor that whole oriented layer can have less section in open area, is more beneficial for avoiding liquid crystal aligning bad.Meanwhile, the first metal layer is completely covered the 3rd metal level of lower section, and the 3rd metal level can be made to avoid the exposed outside at array base palte, touch malaria and corrode.
Description
Technical field
The invention belongs to display field, be specifically related to a kind of array base palte and preparation method thereof.
Background technology
As it is shown in figure 1, in array base palte preparation technology of the prior art, due to organic
Film layer 4 thicker (thicker organic membrane can reduce electric capacity, reduce substrate load, from
And reduce power consumption), when organic film 4 offers the first via area 9, this first mistake
The degree of depth of bore region 9 is relatively big, and the section difference causing each functional layer of subsequent deposition is bigger.Example
Such as, the 3rd metal level 6(such as ITO layer), passivation layer 5(such as PVX layer) all
Cause bigger section poor.Meanwhile, the top of the 3rd metal level 6 defines deeper opening
Port area 11, if subsequent technique coats oriented layer, whole orientation on the 3rd metal level 6
It is poor that layer can have bigger section in open area 11, more easily causes liquid crystal aligning bad.With
Time, the 3rd exposed outside at array base palte of metal level 6, touch malaria and send out
Raw corrosion.
Summary of the invention
Present invention aim to address in prior art owing to organic film is thicker at organic membrane
Hold via on layer and can cause the open area of top relatively deeply, thus cause each function follow-up
The section difference of layer is relatively big, the problem that liquid crystal aligning is bad, it is provided that a kind of by above-mentioned open area
The array base palte filled.
Solve the technology of the present invention problem and be employed technical scheme comprise that a kind of array base palte, bag
Including the functional layer being arranged on substrate, described functional layer has the first via area,
On the direction away from substrate of the first described via area, there is open area, its feature
Being, described open area is provided with the first metal layer.
Owing to the first metal layer is filled with above-mentioned open area, if subsequent technique is above-mentioned
The first metal layer on coat oriented layer, whole oriented layer can be at above-mentioned open area tool
There is less section poor, be more beneficial for avoiding liquid crystal aligning bad.Meanwhile, the first metal layer
Threeth metal level of lower section is completely covered, the 3rd metal level can be made to avoid exposed at array
The outside of substrate, touch malaria and corrode.
Preferably, described functional layer is organic film.
Preferably, the first via area of described functional layer sets near the side of substrate
There is the second metal level.
It may further be preferable that the second described metal level is source and drain metal level.
Preferably, it is provided with between described the second metal level and described the first metal layer
3rd metal level, the 3rd described metal level and the second metal level by be arranged on both it
Between insulating barrier second via connect.
Preferably, the material of described the first metal layer be tin indium oxide, gold, silver,
Any one in copper, aluminum, titanium, chromium, molybdenum, cadmium, nickel, cobalt, electrical conductivity alloy.
It is a further object to provide the preparation method of a kind of above-mentioned array base palte,
Including the step being formed the first metal layer by patterning processes in described open area.
Preferably, further comprising the steps of before forming the step of the first metal layer:
S1. by patterning processes in the corresponding part shape of organic film and the second metal level
Become the first via area；
S2. at organic film and the first via area depositing insulating layer；
S3. separated in the portion that insulating barrier is corresponding with the first via area by patterning processes
If the second via；
S4. the 3rd metal level is formed at insulating barrier and the second via.
It may further be preferable that form the first metal layer to use negative photoresist, form the
One via area uses positive photo glue, forms the first metal layer and forms the first via area
The step in territory uses same mask plate.
The array base palte of the present invention is due to by above-mentioned open area filling, follow-up coating
During oriented layer, oriented layer entirety section difference is reduced, and can will avoid causing the liquid of oriented layer
Brilliant orientation is bad.Meanwhile, the first metal layer is completely covered the 3rd metal level of lower section, can
So that the 3rd metal level avoids the exposed outside at array base palte, touches malaria
Corrode.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of array base palte in prior art.
Fig. 2 is the cross section of the array base palte in the embodiment of the present invention 1 with the first metal layer
Schematic diagram.
Fig. 3 is to define insulating barrier and the array of the second metal level in the embodiment of the present invention 2
The schematic cross-section of substrate.
Fig. 4 is the array base palte defining the first via area in the embodiment of the present invention 2
Schematic cross-section.
Fig. 5 is the cross section of the array base palte defining the second via in the embodiment of the present invention 2
Schematic diagram.
Fig. 6 be the embodiment of the present invention 2 defines the 3rd metal level array base palte cut
Face schematic diagram.
Fig. 7 be the embodiment of the present invention 2 defines the first metal layer array base palte cut
Face schematic diagram.
Wherein: 1. substrate；2. insulating barrier；3. the second metal level；4. organic film；The most blunt
Change layer；6. the 3rd metal level；7. the first metal layer；8. mask plate；9. the first via area；
10. the second via；11. open areas.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, knot below
Close the drawings and specific embodiments the present invention is described in further detail.
Embodiment 1
As in figure 2 it is shown, the present embodiment provides a kind of array base palte, including substrate 1, and
The insulating barrier 2 arranged on substrate 1, arranges patterned second metal level on insulating barrier 2
3, the second metal level 3 is arranged on the first via area 9 of organic film 4；The most successively
Arranging patterned passivation layer 5, patterned 3rd metal level 6, the second metal level 3 leads to
Second via 10 and the 3rd metal level being positioned at the first via area 9 of transpassivation layer 5
6 connect；3rd metal level 6 is positioned at the direction away from substrate 1 of the first via area 9
On have in the 11(figure of open area overlap with the first metal layer 7), open area 11
Inside it is provided with patterned the first metal layer 7.
Owing to the first metal layer 7 is filled with open area 11, if subsequent technique is at the first gold medal
Belonging to and coat oriented layer on layer 7, whole oriented layer can have less section in open area 11
Difference, is more beneficial for avoiding liquid crystal aligning bad.
As shown in Figure 2, it is preferred that the second metal level 3 is source and drain metal level；Preferably,
The material of the first metal layer 7 be tin indium oxide, gold, silver, copper, aluminum, titanium, chromium, molybdenum,
Any one in cadmium, nickel, cobalt, electrical conductivity alloy.The first metal layer 7 is completely covered down
3rd metal level 6 of side, can make the 3rd metal level 6 avoid exposed outside array base palte
Face, touch malaria and corrode.
Embodiment 2
As shown in fig. 3 to 7, the present embodiment provides the preparation method of a kind of above-mentioned array base palte,
Comprise the following steps:
A. as it is shown on figure 3, be sequentially depositing insulating barrier 2 and the second metal level on substrate 1
3, deposition process is prior art category, it is for instance possible to use vapour deposition process.Substrate
1 can be with glass substrate, plastic base etc.；The material of insulating barrier 2 can be silicon dioxide or
Silicon nitride；Second metal level 3 can be source and drain metal level, the material choosing of source and drain metal level
It is selected as prior art category.Then the second metal level 3 is patterned, figure chemical industry
Skill include mask exposure, develop, the step such as etching, be the category of prior art, at this
Repeat the most one by one.
The most as shown in Figure 4, form organic film 4 on substrate 1, be paved with whole substrate 1.
The material that the material of organic film 4 is known to the skilled person, forming method is permissible
Spin coating, spraying etc..Organic film 4 is possible to prevent upper and lower two conductive layers crosstalk etc.；But
The thickness of organic film 4 is bigger than the thickness of other functional layer using deposition process to prepare.
The part that organic film 4 is corresponding with the first metal layer 7 is formed by patterning process
First via area 9.Preferably, the patterning process of organic film 4 uses eurymeric light
Photoresist.
C. as it is shown in figure 5, then deposit blunt at organic film 4 and the first via area 9
Changing layer 5, the preparation method of passivation layer 5 can be identical with the preparation method of insulating barrier 2.Connect
And passivation layer 5 is patterned, corresponding with the first via area 9 at passivation layer 5
Part offer the second via 10.Wherein, patterning process include mask exposure, development,
The steps such as etching, are the categories of prior art, and this is no longer going to repeat them.
The most as shown in Figure 6, at passivation layer 5 and the second via 10 area deposition the 3rd metal
Layer 6, the preparation method of the 3rd metal level 6 can be with the preparation method phase of the second metal level 3
With.
E. as it is shown in fig. 7, deposit the first metal layer 7 on the second metal level 3, wherein,
The preparation method of the first metal layer 7 can be identical with the preparation method of the second metal level 3.
Preferably, patterning process forms the first metal layer 7 and uses negative photoresist, graphically
It can be the mask plate in step B that technique forms the mask plate 8 of the first metal layer 7 employing
8.Use same mask 8 more can Simplified flowsheet, cost-effective.
It is understood that the functional layer of the present invention can also be arbitrary in array base palte
One layer, as long as this functional layer is thicker, when this functional layer opens via, the opening of formation
Region is deep, has influence on follow-up functional layer and broadly falls into protection scope of the present invention；This
" filling " described in invention is as long as referring to reduce, no the degree of depth of above-mentioned open area
The use affecting follow-up function layer broadly falls into protection scope of the present invention.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present
And the illustrative embodiments used, but the invention is not limited in this.For ability
For those of ordinary skill in territory, in the situation without departing from spirit and substance of the present invention
Under, various modification and improvement can be made, these modification and improvement are also considered as the present invention's
Protection domain.
Claims (7)
1. an array base palte, including the functional layer being arranged on substrate, described function
Layer has the first via area, in the direction away from substrate of the first described via area
On there is open area, it is characterised in that described open area is provided with the 3rd metal level,
3rd metal level upper surface is formed with the first metal layer for reducing open area section difference；
First via area of described functional layer is provided with the second metal near the side of substrate
Layer；Described 3rd metal level between described the first metal layer and described second metal level,
The 3rd described metal level and the second metal level are by the insulating barrier that is arranged between
Second via connects.
2. array base palte as claimed in claim 1, it is characterised in that described function
Layer is organic film.
3. array base palte as claimed in claim 2, it is characterised in that described second
Metal level is source and drain metal level.
4. array base palte as claimed in claim 1, it is characterised in that described first
The material of metal level be tin indium oxide, gold, silver, copper, aluminum, titanium, chromium, molybdenum, cadmium,
Any one in nickel, cobalt, electrical conductivity alloy.
5. a preparation method for the array base palte as described in claim 1-4 is arbitrary, it is special
Levy and be, form the first metal layer including by patterning processes in described open area
Step.
6. a preparation method for array base palte as claimed in claim 5, its feature exists
In, further comprising the steps of before forming the step of the first metal layer:
S1. by patterning processes in the corresponding part shape of organic film and the second metal level
Become the first via area；
S2. at organic film and the first via area depositing insulating layer；
S3. separated in the portion that insulating barrier is corresponding with the first via area by patterning processes
If the second via；
S4. the 3rd metal level is formed at insulating barrier and the second via.
7. the preparation method of array base palte as claimed in claim 6, it is characterised in that
Form the first metal layer and use negative photoresist, form the first via area and use eurymeric light
Photoresist, is formed in the step of the first metal layer and formation the first via area and uses same covering
Lamina membranacea.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310736155.7A CN103744213B (en) | 2013-12-25 | 2013-12-25 | A kind of array base palte and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310736155.7A CN103744213B (en) | 2013-12-25 | 2013-12-25 | A kind of array base palte and preparation method thereof |
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| Publication Number | Publication Date |
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| CN103744213A CN103744213A (en) | 2014-04-23 |
| CN103744213B true CN103744213B (en) | 2016-08-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105629617A (en) * | 2016-04-01 | 2016-06-01 | 京东方科技集团股份有限公司 | Display base plate and display device |
| CN106681069A (en) * | 2017-01-03 | 2017-05-17 | 京东方科技集团股份有限公司 | Display baseplate, preparation method for same, and display device |
| WO2019095214A1 (en) * | 2017-11-16 | 2019-05-23 | 深圳市柔宇科技有限公司 | Tft array structure and binding region thereof, and method for manufacturing binding region |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005352456A (en) * | 2004-05-14 | 2005-12-22 | Nec Kagoshima Ltd | Active matrix type substrate and manufacturing method for the same |
| CN101919043A (en) * | 2008-01-21 | 2010-12-15 | 日本电气株式会社 | Display device |
| CN102394231A (en) * | 2011-10-25 | 2012-03-28 | 友达光电股份有限公司 | Chip connecting structure used for liquid crystal display |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3989761B2 (en) * | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | Semiconductor display device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005352456A (en) * | 2004-05-14 | 2005-12-22 | Nec Kagoshima Ltd | Active matrix type substrate and manufacturing method for the same |
| CN101919043A (en) * | 2008-01-21 | 2010-12-15 | 日本电气株式会社 | Display device |
| CN102394231A (en) * | 2011-10-25 | 2012-03-28 | 友达光电股份有限公司 | Chip connecting structure used for liquid crystal display |
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