CN103744196A - On-line adjustable integration optical power divider and preparation method thereof - Google Patents
On-line adjustable integration optical power divider and preparation method thereof Download PDFInfo
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- CN103744196A CN103744196A CN201310633008.7A CN201310633008A CN103744196A CN 103744196 A CN103744196 A CN 103744196A CN 201310633008 A CN201310633008 A CN 201310633008A CN 103744196 A CN103744196 A CN 103744196A
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Abstract
The invention belongs to the filed of integrated optics, and relates to an on-line adjustable integration optical power divider and a preparation method thereof. The method includes the steps that a substrate material is selected, and a lower cladding layer and a core layer are deposited on the substrate material; designed core layer patterns are etched to the core layer through an etching technology, and the etched core layer comprises an input waveguide area, a transition waveguide area, a coupling waveguide area and an output waveguide area; a deposited upper cladding layer covers the core layer, and a heating resistor is manufactured in the upper cladding layer of the coupling waveguide area; a SiO2 thin film is deposited on the heating resistor, designed electrode patterns are etched to the SiO2 thin film through the etching technology, so that an electrode of the heating resistor is formed, and wafer preparation is completed; the completed wafer is cut into single chips. Due to the fact that the heating resistor is arranged in the upper cladding layer of the coupling waveguide area, waveguide core layer materials are affected by a thermo-optical coefficient, the refractive index is changed, and therefore optical power uneven distribution is achieved.
Description
Technical field
The invention belongs to integrated optics technique field, relate in particular to a kind of online adjustable integrated optical power divider and preparation method.
Background technology
In fiber optic network is laid, due to communication terminal (Optical Network Unit, ONU) apart from core network node apart from difference, cause the loss of light signal on different links different, therefore can not guarantee that each communication terminal (Optical Network Unit, ONU) receives identical luminous power.
But the restriction due to integrated light guide one-shot forming technique, existing integrated optical power divider is all uniform distribution, be difficult to allow Integrated Light distribution of work device realize luminous power and distribute adjustable function, this has restricted and has set up in optical network structure according to different link loads, the realization of flexible allocation luminous power, has caused waste to a great extent.
Summary of the invention
The embodiment of the present invention provides a kind of online adjustable integrated optical power divider and preparation method, and being intended to solve integrated optical power divider of the prior art is all the nonadjustable problem of uniform distribution.
The embodiment of the present invention is achieved in that a kind of preparation method of online adjustable integrated optical power divider, and described method comprises:
A. select backing material, and deposit under-clad layer and sandwich layer on described backing material;
B. adopt lithographic technique that the sandwich layer pattern etching of design is arrived to described sandwich layer, wherein, after etching, sandwich layer comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district;
C. deposit top covering sandwich layer is covered, and make heating resistor at the top covering in described coupled waveguide district;
D. on described heating resistor, deposit SiO
2film, adopts lithographic technique that the electrode pattern of design is etched into SiO
2film forms the electrode of heating resistor, completes the preparation of wafer;
E. the wafer completing is cut into one single chip.
The embodiment of the present invention also provides a kind of online adjustable integrated optical power divider, described divider comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district, described input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district connect successively, on the top covering in described coupled waveguide district, be provided with heating resistor, on described heating resistor, be provided with SiO
2thinfilm protective coating;
Wherein, substrate, under-clad layer, sandwich layer and top covering are as optical waveguide.
Integrated optical power divider preparation method of the present invention by depositing under-clad layer and sandwich layer on backing material, adopt lithographic technique by the sandwich layer pattern etching of design to sandwich layer, wherein, described sandwich layer comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district, deposition top covering covers sandwich layer, the top covering in Bing coupled waveguide district is made heating resistor, on heating resistor, deposit SiO2 film, adopt lithographic technique that the electrode pattern of design is etched into the electrode that SiO2 film forms heating resistor, in coupled waveguide district, by setting up heating resistor at top covering, apply voltage or electric current time, by the heating of sandwich layer, resistance work, and the efficiency of heating resistor is with the voltage applying or the proportional increase of electric current, waveguide core layer material is subject to the impact of thermo-optical coeffecient, there is the change of refractive index, thereby realize the uneven distribution of luminous power, and change amount increases with the increase of voltage or electric current.
Accompanying drawing explanation
Fig. 1 represents preparation method's process flow diagram of a kind of online adjustable integrated optical power divider that the embodiment of the present invention provides.
Fig. 2 represents preparation method's process flow diagram of a kind of online adjustable integrated optical power divider that the embodiment of the present invention provides.
Fig. 3 represents a kind of online adjustable integrated optical power dispensing arrangement figure that the embodiment of the present invention provides.
Fig. 4 (a), 4(b), 4(c), 4(d) represent the test design sketch of a kind of online adjustable integrated optical power divider that the embodiment of the present invention provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Fig. 1 shows a kind of preparation method's process flow diagram of adjustable integrated optical power divider online that the embodiment of the present invention provides, and details are as follows:
In step S101, select backing material, and on backing material, deposit under-clad layer and sandwich layer;
In embodiments of the present invention, integrated optical power divider has comprised backing material, under-clad layer, sandwich layer and top covering, when preparing integrated optical power divider, the first-selected backing material of selecting wafer, general silicon-based wafer or the lithium niobate of adopting, also other backing materials be can adopt, under-clad layer and sandwich layer then on backing material, deposited.
In step S102, employing lithographic technique is by the sandwich layer pattern etching of design to sandwich layer, and wherein, after etching, sandwich layer comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district;
In embodiments of the present invention, employing lithographic technique to the sandwich layer of deposition, etches input waveguide district by etching by sandwich layer, transition waceguide district, coupled waveguide district and output waveguide district by the sandwich layer pattern etching designing.
In step S103, deposition top covering covers sandwich layer, and makes heating resistor at the top covering in described coupled waveguide district;
In embodiments of the present invention, deposited after sandwich layer, on sandwich layer, deposit again top covering, sandwich layer is covered, and the top covering in Bing coupled waveguide district is made heating resistor, by the heating of sandwich layer, can be so that the material backscatter extinction logarithmic ratio of heating zone changes, make refraction index changing, thereby realize the uneven distribution of luminous power, reach adjustable in real time online.
In step S104, on heating resistor, deposit SiO
2film, adopts lithographic technique that the electrode pattern of design is etched into SiO
2film forms the electrode of heating resistor, completes the preparation of wafer.
In embodiments of the present invention, on heating resistor, deposit SiO2 film, adopt lithographic technique that the electrode pattern of design is etched into the electrode that SiO2 film forms heating resistor, apply voltage or electric current time, by the heating of sandwich layer, resistance work, and the efficiency of heating resistor is with the voltage applying or the proportional increase of electric current, waveguide core layer material is subject to the impact of thermo-optical coeffecient, there is the change of refractive index, thereby realize the uneven distribution of luminous power, and change amount increases with the increase of voltage or electric current.
In step S105, the wafer completing is cut into one single chip.
Fig. 2 shows a kind of preparation method's process flow diagram of adjustable integrated optical power divider online that the embodiment of the present invention provides, and details are as follows:
In step S201, select backing material, backing material is carried out to surface finish;
In step S202, on backing material, deposit under-clad layer annealing, deposit thickness is more than 12 μ m;
In embodiments of the present invention, deposit under-clad layer on backing material, adopt chemical vapour deposition technique deposition, its thickness is more than 12 μ m, then, to its annealing, eliminates stress.
In step S203, on under-clad layer, deposit sandwich layer annealing, deposit thickness is greater than 3 μ m;
In embodiments of the present invention, deposition sandwich layer, adopts chemical vapour deposition technique deposition, and its thickness is greater than 3 μ m, then, to its annealing, eliminates stress.
In step S204, the mask Cr layer by evaporation or the method deposition-etch sandwich layer of observing and controlling sputter, carries out photoetching development to Cr layer, and the sandwich layer figure of design is transferred to Cr layer, and deposit thickness is more than 150nm;
In embodiments of the present invention, the mask Cr layer of deposition-etch sandwich layer, the mode of employing evaporation or magnetron sputtering, thickness is more than 150nm, by adopting the form of mask Cr layer, anti-strike capability is stronger.
In step S205, adopt lithographic technique to remove Cr mask layer, retain sandwich layer, wherein, after etching, sandwich layer comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district;
In embodiments of the present invention, CR layer is carried out to photoetching and development, intact CR layer that design configuration is transferred to gets on; With CR, as etch mask, by the method for etching, the figure of CR is transferred to above sandwich layer, adopted the technique of etching, remove CR mask layer, only retain sandwich layer, after etching, sandwich layer has comprised input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district.
In step S206, on described sandwich layer, deposit top covering, deposit thickness is more than 12 μ m; And adopt the method for evaporation or observing and controlling sputter on the top covering in described coupled waveguide district, to make heating resistor material.
In embodiments of the present invention, adopt chemical vapour deposition technique or flame hydrolysis deposition top covering on sandwich layer, sandwich layer is covered, deposit thickness is more than 12 μ m, and on the top covering in coupled waveguide district, makes heating resistor material.
In step S207, heating resistor material is carried out to photoetching development, the resistance pattern of design is transferred to heating resistor material gets on and etching forms heating resistor;
In embodiments of the present invention, by heating resistor material is carried out to photoetching development, the resistance pattern designing is transferred to resistance material and get on, then resistance material is carried out to etching formation heating resistor.
In step S208, on heating resistor, deposit SiO
2film, to SiO
2film carries out photoetching development, and the electrode pattern of design is transferred to SiO
2film;
In embodiments of the present invention, on heating resistor, deposit SiO
2film, forms layer protecting film, heating resistor is protected, by SiO
2film carries out photoetching development the electrode pattern designing is transferred to SiO
2on film, wherein, SiO
2film using plasma strengthens chemical vapour deposition technique deposition.
In step S209, adopt lithographic technique to SiO
2film enters etching, forms the electrode of heating resistor, completes the preparation of wafer;
In step S210, the wafer completing is cut into one single chip.
In step S211, the input end of one single chip and output terminal are carried out to oblique 8 degree angle polishings;
In step S212, input end and output terminal are carried out to coupling fiber;
In step S213, packaged product is fixed on base, add circuit and make heating resistor work.
Fig. 3 shows a kind of online adjustable integrated optical power dispensing arrangement figure that the embodiment of the present invention provides, and details are as follows:
Fig. 4 (a)-(d) shows the test effect of online adjustable integrated optical power divider, a kind of online adjustable integrated optical power divider, divider comprises input waveguide district 1, transition waceguide district 2, coupled waveguide district 3 and output waveguide district 4, input waveguide district 1, transition waceguide district 2, coupled waveguide district 3 and output waveguide district 4 connect successively, on the top covering in coupled waveguide district 3, are provided with heating resistor, are provided with SiO on heating resistor
2thinfilm protective coating; Wherein, substrate, under-clad layer, sandwich layer and top covering are as optical waveguide.
In embodiments of the present invention, utilization, at the heat of coupling regime heating resistor, causes the refractive index in this region to change, thereby causes luminous power at the power uneven distribution of take-off point, and the amount of this uneven distribution, the heat producing with heating resistor increases.
The output optical signal quantity of the output terminal in output waveguide district is less than or equal to 8 tunnel optical waveguide outputs, and the waveguide spacing of every two-way optical waveguide output is 250 μ m, the output optical signal quantity of the output terminal in output waveguide district is greater than 8 tunnel optical waveguide outputs, and the waveguide spacing of every two-way optical waveguide output is 127 μ m.
In embodiments of the present invention, by the way, output optical signal quantity can be divided into two, then divide 4, then divide 8 etc.
Wherein, the thickness of the under-clad layer of divider is greater than 12 μ m, and the thickness of sandwich layer is greater than 3 μ m, and the thickness of top covering is greater than 12 μ m.
Integrated optical power divider preparation method of the present invention by depositing under-clad layer and sandwich layer on backing material, adopt lithographic technique by the sandwich layer pattern etching of design to sandwich layer, wherein, described sandwich layer comprises input waveguide district 1, transition waceguide district 2, coupled waveguide district 3 and output waveguide district 4, deposition top covering covers sandwich layer, the top covering in Bing coupled waveguide district 3 is made heating resistor, on heating resistor, deposit SiO2 film, adopt lithographic technique that the electrode pattern of design is etched into the electrode that SiO2 film forms heating resistor, in coupled waveguide district, by setting up heating resistor at top covering, apply voltage or electric current time, by the heating of sandwich layer, resistance work, and the efficiency of heating resistor is with the voltage applying or the proportional increase of electric current, waveguide core layer material is subject to the impact of thermo-optical coeffecient, there is the change of refractive index, thereby realize the uneven distribution of luminous power, and change amount increases with the increase of voltage or electric current.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a preparation method for online adjustable integrated optical power divider, is characterized in that, described method comprises:
A. select backing material, and deposit under-clad layer and sandwich layer on described backing material;
B. adopt lithographic technique that the sandwich layer pattern etching of design is arrived to described sandwich layer, wherein, after etching, sandwich layer comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district;
C. deposit top covering sandwich layer is covered, and make heating resistor at the top covering in described coupled waveguide district;
D. on described heating resistor, deposit SiO
2film, adopts lithographic technique that the electrode pattern of design is etched into SiO
2film forms the electrode of heating resistor, completes the preparation of wafer;
E. the wafer completing is cut into one single chip.
2. preparation method as claimed in claim 1, is characterized in that, described steps A specifically comprises:
Select backing material, described backing material is carried out to surface finish;
On described backing material, deposit under-clad layer annealing, described deposit thickness is more than 12 μ m;
On described under-clad layer, deposit sandwich layer annealing, described deposit thickness is more than 3 μ m.
3. preparation method as claimed in claim 1, is characterized in that, described step B specifically comprises:
Mask Cr layer by sandwich layer described in the method deposition-etch of evaporation or observing and controlling sputter, carries out photoetching development to described Cr layer, and the sandwich layer figure of design is transferred to Cr layer, and described deposit thickness is more than 150nm;
Adopt lithographic technique to remove Cr mask layer, retain sandwich layer, wherein, after etching, sandwich layer comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district.
4. preparation method as claimed in claim 1, is characterized in that, described step C specifically comprises:
On described sandwich layer, deposit top covering, deposit thickness is more than 12 μ m, and adopts the method for evaporation or observing and controlling sputter on the top covering in described coupled waveguide district, to make heating resistor material;
Described heating resistor material is carried out to photoetching development, the resistance pattern of design is transferred to heating resistor material gets on and etching forms heating resistor.
5. preparation method as claimed in claim 1, is characterized in that, described step D specifically comprises:
On described heating resistor, deposit SiO
2film, to described SiO
2film carries out photoetching development, and the electrode pattern of design is transferred to SiO
2film;
Adopt lithographic technique to SiO
2film enters etching, forms the electrode of heating resistor;
Complete the preparation of wafer.
6. preparation method as claimed in claim 1, is characterized in that, after described step e, also comprises:
The input end of described one single chip and output terminal are carried out to oblique 8 degree angle polishings;
Described input end and output terminal are carried out to coupling fiber;
Packaged integrated optical power divider is fixed on base, adds circuit and make described heating resistor work.
7. preparation method as claimed in claim 1, is characterized in that, described under-clad layer and sandwich layer adopt chemical vapour deposition technique deposition, and described top covering adopts chemical vapour deposition technique or flame hydrolysis deposition, described SiO
2film using plasma strengthens chemical vapour deposition technique deposition.
8. an application rights requires the integrated optical power divider that described in 1 prepared by preparation method, it is characterized in that, described divider comprises input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district, described input waveguide district, transition waceguide district, coupled waveguide district and output waveguide district connect successively, on the top covering in described coupled waveguide district, are provided with heating resistor, on described heating resistor, are provided with SiO
2thinfilm protective coating;
Wherein, substrate, under-clad layer, sandwich layer and top covering are as optical waveguide.
9. integrated optical power divider as claimed in claim 8, it is characterized in that, the output optical signal quantity of the output terminal in described output waveguide district is less than or equal to 8 tunnel optical waveguide outputs, and the waveguide spacing of every two-way optical waveguide output is 250 μ m, the output optical signal quantity of the output terminal in described output waveguide district is greater than 8 tunnel optical waveguide outputs, and the waveguide spacing of every two-way optical waveguide output is 127 μ m.
10. integrated optical power divider as claimed in claim 8, is characterized in that, the thickness of described under-clad layer is greater than 12 μ m, and the thickness of described sandwich layer is greater than 3 μ m, and the thickness of described top covering is greater than 12 μ m.
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| CN201310633008.7A CN103744196A (en) | 2013-11-29 | 2013-11-29 | On-line adjustable integration optical power divider and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104880768A (en) * | 2015-05-20 | 2015-09-02 | 电子科技大学 | Tunable optical power divider |
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2013
- 2013-11-29 CN CN201310633008.7A patent/CN103744196A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104880768A (en) * | 2015-05-20 | 2015-09-02 | 电子科技大学 | Tunable optical power divider |
| CN104880768B (en) * | 2015-05-20 | 2017-12-01 | 电子科技大学 | A kind of tunable optical power distributor |
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Application publication date: 20140423 |