CN104714311A - MEMS thermo-optic tunable filter with low optical loss - Google Patents
MEMS thermo-optic tunable filter with low optical loss Download PDFInfo
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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Abstract
The invention provides an MEMS thermo-optic tunable filter with low optical loss, which comprises a multi-cavity optical interference film filter layer and a micro heater, wherein a half-wave resonant cavity is made of AlN or GaN thermo-optic tunable dielectric film materials, and the central wavelength of the MEMS thermo-optic tunable filter can be adjusted by controlling the working current of the micro heater. The invention adopts AlN and GaN as cavity materials of a half-wave resonant cavity in the optical interference film, has higher thermo-optic coefficient and lower extinction coefficient, and can greatly reduce the optical loss of the narrow-band tunable filter. The invention can effectively solve the problems of large optical loss and unsatisfactory application of filtering waveforms of the existing MEMS thermo-optic tuned filter, and has good application prospect in the fields of optical communication and optical sensing.
Description
Technical field
The invention belongs to optical fiber communication, Fibre Optical Sensor and MEMS fields of light devices, particularly relate to a kind of MEMS Thermo-optic tunability wave filter of low optical losses.
Background technology
Adjustable light wave-filter typically refers to the adjustable optical filter of the centre wavelength of optical band pass filter, due to the dirigibility of its wavelength regulation, in optical fiber communication and sensory field of optic fibre, has important application, is one of Primary Component forming ASON (Automatically Switched Optical Network).Based on the tunable optical filter of MEMS technology due to it has microminaturization, integrated and batch micro operations, low cost and other advantages more and more become research and development emphasis.
Current MEMS optic tunable filter is mainly based on Fabry-Perot chamber principle of interference, and wavelength tuning mechanism mainly contains the long tuning and tuning two schemes of refractive index in chamber.The long tuning scheme in chamber to be driven by electrostatic or the wherein micro-reflector in Piezoelectric Driving FP chamber moves along normal direction and regulates FP chamber long, and what realize resonance wavelength is tuning.This scheme wavelength tuning range is large, but need the optics micro-reflector of making two high optical qualities, control the degree of being parallel to each other of two micromirror accurately, and in the process of mobile minute surface, also need maintenance two micromirror to have the very high depth of parallelism, therefore technology realizes very difficult, and it is more responsive for the interference ratio such as extraneous vibration, voltage fluctuation, wavelength stability is poor, also there is wave length shift problem simultaneously, affects its application.Usually the light interferencing filter in single chamber can only be realized based on MEMS technology Fabry-Perot cavity tunable filter, its curve of spectrum is long-range navigation thatch spectral line, be difficult to the application demand meeting passband flat-top, and it adopts single cavity structure, be also difficult to the contradiction solving narrow linewidth and large tuning range.
For the tuning scheme of refractive index, the membrane structure reported all adopts polysilicon or monocrystalline silicon thin film as the wavelength tuning material in half-wavelength FP chamber, utilizes resistance heated to change silicon refractive index and carrys out adjusting wavelength.This scheme directly adopts membrane structure due to FP chamber, there is no the mechanical motion of micro mirror, its wavelength stability is good, because optical film technique equipment reaches very high level, adopt refractive index tuning scheme in making complexity, be significantly better than the long tuning scheme in chamber, and narrow linewidth, optical filter that passband is smooth can be realized.Realize the tuning scheme of refractive index, mainly contain two kinds of paths at present.One is as the tuning material of refractive index based on individual layer monocrystalline silicon membrane, this monocrystalline silicon generally adopts the top layer silicon of SOI material to make, thickness be several microns to some tens of pm, its optical thin film is the optical interference film in single chamber, is therefore difficult to the narrow band pass filter realizing flat-top.Another kind is as refractive index thermo-optical tunability material based on the amorphous silicon of multilayer or polysilicon membrane, usual employing silicon deposited film technique makes, thickness is hundreds of nanometer, and its optical thin film is the optical interference film of multi-cavity, therefore can realize the narrow band pass filter of flat-top.
The manufacture of optical thin film is ripe technology, adopts limited several optical medium materials as membraneous material for a long time, and this mainly because these thin film deposition processes are ripe, optical thin film performance is good, can reduce the outfit quantity of plated film target.Adopt silicon materials as the reason of wavelength tuning material be based on the very high thermo-optical coeffecient of silicon materials, can the optical communicating waveband of transmission 1.3-1.6 μm and the maturity of silicon thin film technique.But, the light insertion loss of the arrowband flat-top adjustable optical filter of the FP cavity material using silicon as thermo-optical tunability is up to 2-5dB, and live width is narrower, and insertion loss is higher, cannot meet the requirement of optical communication system, this result annoyings optic communication device worker always.Find new optical film materials, this membraneous material can realize the thermo-optical tunability of wavelength, again can be compatible with existing film making process, significantly can reduce the optical loss of Thermo-optic tunability optical thin film, be the long-term target found of adjustable light wave-filter research simultaneously.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of MEMS Thermo-optic tunability wave filter of low optical losses, for solving the problem that in prior art, the loss of Thermo-optic tunability filter optical is high.
For achieving the above object and other relevant objects, the invention provides a kind of MEMS Thermo-optic tunability wave filter of low optical losses, described MEMS Thermo-optic tunability wave filter comprises multi-cavity optical interference film filter layer and the micro-heater that half wave resonances chamber adopts AlN or GaN thermo-optic tunable dielectric thin-film material, by controlling the working current of described micro-heater, the centre wavelength of described MEMS Thermo-optic tunability wave filter can be regulated.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, described multi-cavity optical interference film filter layer comprises and adopts the half wave resonances chamber of AlN or GaN thermo-optic tunable dielectric thin-film material and multilayer dielectric film is alternately laminated forms, and described multilayer dielectric film is by high refractive index medium film and low refractive index dielectric film is alternately laminated forms.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, the material of described high refractive index medium film comprises TiO
2, Si
3n
4, and Ta
2o
5in one, the material of described low refractive index dielectric film comprises SiO
2.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, described multi-cavity optical interference film filter layer is the narrowband optical interference filter formed by the optical interference chamber of N number of cascade, wherein, and N >=1.
Further, as N>1, the band that described multi-cavity optical interference film filter layer can realize light wave leads to planarization.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, described micro-heater is the electric resistance heater be made up of metal film strips or semiconductor film bar, described micro-heater is positioned at outside the hot spot of working beam, with working beam center for symmetric points are centrosymmetric distribution.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, described MEMS Thermo-optic tunability wave filter also comprises microtemperature sensor, described microtemperature sensor is the resistance temperature detector be made up of metal film strips or semiconductor film bar, it is positioned at outside the hot spot of working beam, and described microtemperature sensor can provide the temperature signal of interference filter for the close-loop feedback of tuning wavelength.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, by controlling the working current of micro-heater, the spectral tuning of described multi-cavity optical interference film filter layer centre wavelength 0nm ~ 50nm can be realized.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, described multi-cavity optical interference film filter layer is formed on single-crystal silicon support film, described single-crystal silicon support film is connected by monocrystalline silicon hanging beam with silicon substrate, described silicon substrate is etched with light hole, form heat insulation microstructure to reduce heat transfer, thus reduce the tuning power consumption of electric heating.
Further, the thickness of described single-crystal silicon support film is 3 μm ~ 100 μm, and the backside deposition of described single-crystal silicon support film has optical anti-reflective film.
Further, the size of described light hole is greater than the spot size of working beam.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, described multi-cavity optical interference film filter layer is formed on silicon substrate, described silicon substrate is etched with light hole, and described multi-cavity optical interference film filter layer is directly exposed at described light hole place.
As a kind of preferred version of the MEMS Thermo-optic tunability wave filter of low optical losses of the present invention, described Thermo-optic tunability wave filter can be applied in tunable optical receiver, tunable laser, DWDM optical performance monitor, light up/down multiplexer.
As mentioned above, the invention provides a kind of MEMS Thermo-optic tunability wave filter of low optical losses, described MEMS Thermo-optic tunability wave filter comprises multi-cavity optical interference film filter layer and the micro-heater that half wave resonances chamber adopts AlN or GaN thermo-optic tunable dielectric thin-film material, by controlling the working current of described micro-heater, the centre wavelength of described MEMS Thermo-optic tunability wave filter can be regulated.The present invention adopts AlN, GaN as the cavity material in half wave resonances chamber in FP chamber, and it had both had higher thermo-optical coeffecient, had again lower extinction coefficient, significantly can reduce the optical loss of narrow-band tunable filter.The present invention effectively can improve the problem that the large and filter shape of loss that existing MEMS thermo-optical tunability wave filter exists can not meet application, has a good application prospect at optical communication, light sensory field.
Accompanying drawing explanation
Fig. 1 ~ Fig. 3 is shown as the structural representation of the MEMS Thermo-optic tunability wave filter of the low optical losses in the embodiment of the present invention 1.
Fig. 4 ~ Fig. 5 is shown as the structural representation of the MEMS Thermo-optic tunability wave filter of the low optical losses in the embodiment of the present invention 2.
Element numbers explanation
1 multi-cavity optical interference film filter layer
11 AlN or GaN thermo-optic tunable dielectric thin-film material
10 multilayer dielectric films
2 micro-heaters
3 microtemperature sensors
4 single-crystal silicon support films
5 optical anti-reflective films
6 monocrystalline silicon hanging beams
7 silicon substrates
8 lead pad
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Fig. 5.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment 1
As shown in FIG. 1 to 3, the invention provides a kind of MEMS Thermo-optic tunability wave filter of low optical losses, described MEMS Thermo-optic tunability wave filter comprises multi-cavity optical interference film filter layer 1 and the micro-heater 2 that half wave resonances chamber adopts AlN or GaN thermo-optic tunable dielectric thin-film material 11, by controlling the working current of described micro-heater 2, the centre wavelength of described MEMS Thermo-optic tunability wave filter can be regulated.
As shown in Figure 1, the MEMS Thermo-optic tunability wave filter in the present embodiment comprises: multi-cavity optical interference film filter layer 1, single-crystal silicon support film 4, monocrystalline silicon hanging beam 6, optical anti-reflective film 5, silicon substrate 7, micro-heater 2, microtemperature sensor 3 and lead pad 8.
Wherein, described multi-cavity optical interference film filter layer 1 is formed on single-crystal silicon support film 4, and is positioned at the middle section of described single-crystal silicon support film 4, is called territory, transparent zone; Described optical anti-reflective film 5 is deposited on single-crystal silicon support film 4 back side, described single-crystal silicon support film 4 is connected by monocrystalline silicon hanging beam 6 with silicon substrate 7, described silicon substrate 7 is etched with light hole, forms heat insulation microstructure to reduce heat transfer, thus reduces the tuning power consumption of electric heating.In the present embodiment, the thickness of described single-crystal silicon support film 4 is 3 μm ~ 100 μm, and the size of described light hole is greater than the spot size of working beam.
As shown in Figure 3, described micro-heater 2 and microtemperature sensor 3 are made in the fringe region of described single-crystal silicon support film 4, be centered around described multi-cavity optical interference film filter layer 1 around, the lead pad 8 that described micro-heater 2 and microtemperature sensor 3 go between on silicon substrate 7 through described monocrystalline silicon hanging beam 6.In the present embodiment, described micro-heater 2 is the electric resistance heater be made up of metal film strips or semiconductor film bar, described micro-heater 2 is positioned at outside the hot spot of working beam, with working beam center for symmetric points are centrosymmetric distribution, and, described microtemperature sensor 3 is the resistance temperature detectors be made up of metal film strips or semiconductor film bar, it is positioned at outside the hot spot of working beam, and described microtemperature sensor 3 can provide the temperature signal of interference filter for the close-loop feedback of tuning wavelength.By controlling the working current of micro-heater 2, the spectral tuning of described multi-cavity optical interference film filter layer 1 centre wavelength 1nm ~ 50nm can be realized.
As shown in Figure 2, described multi-cavity optical interference film filter layer 1 comprises and adopts the half wave resonances chamber of AlN or GaN thermo-optic tunable dielectric thin-film material 11 and multilayer dielectric film 10 is alternately laminated forms, and described multilayer dielectric film 10 is by high refractive index medium film and low refractive index dielectric film is alternately laminated forms.The material of described high refractive index medium film comprises TiO
2, Si
3n
4, and Ta
2o
5in one, the material of described low refractive index dielectric film comprises SiO
2.
Described multi-cavity optical interference film filter layer 1 is the narrowband optical interference filter formed by the optical interference chamber of N number of cascade, wherein, and N >=1.In addition, as N>1, the band that described multi-cavity optical interference film filter layer 1 can realize light wave leads to planarization.
In addition, described multi-cavity optical interference film filter layer 1 can be optimized design according to filtering characteristic demand, and in the present embodiment, for 3 cavity configurations, each rete is arranged as:
S|(HL)
34T(LH)
3L(HL)
34T(LH)
3L(HL)
34T(LH)
3|air
Wherein, S represents substrate silicon, and H represents 1/4 wavelength thickness of the high refractive index medium film in multilayer dielectric film 10, and L represents 1/4 wavelength thickness of the low refracting medium rete in multilayer dielectric film 10, T represents 1/4 wavelength thickness of thermoluminescent material AlN or GaN, (LH)
3represent that high refractive index medium film and low refractive index dielectric film are alternately laminated 3 times.
In described multi-cavity optical interference film filter layer 1, half wave resonances cavity material is the membraneous material of GaN or AlN or other large thermo-optical coeffecients, low extinction coefficient, relative to conventional optical medium material SiO
2the thermo-optical coeffecient of film, the thermo-optical coeffecient of AlN and GaN exceeds an order of magnitude.When changing optical filter temperature by micro-heater 2, there is relatively large change in the refractive index due to half wave resonances cavity material, thus can realize the adjustment of thin film center number of wavelengths nanometer to tens nanometer.Described multi-cavity optical interference film filter layer 1 can adopt existing technique to be prepared, and layers of material can deposit successively, and its optical thickness is accurately controlled by on-line monitoring, thus can realize the filtering characteristic of flat-top arrowband according to application demand.Compared with silicon materials, although the thermo-optical coeffecient of AlN and GaN is slightly low, but the energy gap of AlN and GaN is very high, there is relatively lower extinction coefficient, so can obtain more low optical losses in spike interference filter, wavelength tuning range or tuning power consumption still can meet the requirement of some optical communication applications simultaneously.
In addition, described Thermo-optic tunability wave filter can be applied in tunable optical receiver, tunable laser, DWDM optical performance monitor, light up/down multiplexer.
MEMS Thermo-optic tunability wave filter in the present embodiment is based on soi wafer, adopts MEMS Bulk micro machining to make.Its main manufacturing process is as follows: 1) be oxidized by the soi wafer of high resistivity silicon device layer, superficial growth silicon dioxide layer; Photoetching is carried out to soi wafer upper surface, and carries out silicon dioxide etching, expose and need heavily doped region; Semiconductor heavy doping diffusion is carried out to the region exposed, obtains and add micro-heater 2, microtemperature sensor 3 and semi-girder lead district; 2) by metal sputtering, photoetching, the techniques such as wet etching, make micro-heater 2, microtemperature sensor 3 and lead pad 8 successively at silicon chip upper surface; 3) define heat insulation hanging beam structure at soi wafer photomask surface, and with deep etching process etching soi wafer to buried silicon dioxide layer, produce monocrystalline silicon hanging beam 6 and single-crystal silicon support film 4 structure; 4) on the substrate layer of soi wafer lower surface, make etched features by lithography, and utilize etching or corrosion technology that unwanted substrate layer is removed the buried silicon dioxide layer layer to soi wafer; Silicon dioxide etching liquid is utilized to remove the buried silicon dioxide layer layer of soi wafer; 5) hard mask method is adopted to make patterned multi-cavity optical interference film filter layer 1 and optical anti-reflective film 5 respectively on the upper and lower surface of single-crystal silicon support film 4, wherein, described multi-cavity optical interference film filter layer 1 can adopt electron beam evaporation process, sputtering technology or other thin film deposition processes to prepare.
Embodiment 2
As shown in Fig. 2 and Fig. 4 ~ Fig. 5, the invention provides a kind of MEMS Thermo-optic tunability wave filter of low optical losses, described MEMS Thermo-optic tunability wave filter comprises multi-cavity optical interference film filter layer 1 and the micro-heater 2 that half wave resonances chamber adopts AlN or GaN thermo-optic tunable dielectric thin-film material 11, by controlling the working current of described micro-heater 2, the centre wavelength of described MEMS Thermo-optic tunability wave filter can be regulated.
As shown in Fig. 4 ~ Fig. 5, when described multi-cavity optical interference film filter layer 1 has enough physical strengths, MEMS Thermo-optic tunability wave filter in the present embodiment, comprising: multi-cavity optical interference film filter layer 1, silicon substrate 7, light hole, micro-heater 2, microtemperature sensor 3 and lead pad 8.
Described multi-cavity optical interference film filter layer 1 is formed on silicon substrate 7, and described silicon substrate 7 is etched with light hole, and described multi-cavity optical interference film filter layer 1 is directly exposed at described light hole place.The size of described light hole is greater than the spot size of working beam.
As shown in Figure 5, described micro-heater 2 and microtemperature sensor 3 are made on described multi-cavity optical interference film filter layer 1, and outside the hot spot being positioned at working beam, to be centrosymmetric distribution for symmetric points with working beam center, to be connected to lead pad 8 by lead-in wire.In the present embodiment, described micro-heater 2 is the electric resistance heater be made up of metal film strips or semiconductor film bar, described microtemperature sensor 3 is the resistance temperature detectors be made up of metal film strips or semiconductor film bar, and described microtemperature sensor 3 can provide the temperature signal of interference filter for the close-loop feedback of tuning wavelength.By controlling the working current of micro-heater 2, the spectral tuning of described multi-cavity optical interference film filter layer 1 centre wavelength 0nm ~ 50nm can be realized.
As shown in Figure 2, described multi-cavity optical interference film filter layer 1 comprises and adopts the half wave resonances chamber of AlN or GaN thermo-optic tunable dielectric thin-film material 11 and multilayer dielectric film 10 is alternately laminated forms, and described multilayer dielectric film 10 is by high refractive index medium film and low refractive index dielectric film is alternately laminated forms.The material of described high refractive index medium film comprises TiO
2, Si
3n
4, and Ta
2o
5in one, the material of described low refractive index dielectric film comprises SiO
2.
Described multi-cavity optical interference film filter layer 1 is the narrowband optical interference filter formed by the optical interference chamber of N number of cascade, wherein, and N >=1.In addition, as N>1, the band that described multi-cavity optical interference film filter layer 1 can realize light wave leads to planarization.
In addition, described multi-cavity optical interference film filter layer 1 can be optimized design according to filtering characteristic demand, and for 3 cavity configurations, each film layer structure is arranged as:
air|(HL)
34T(LH)
3L(HL)
34T(LH)
3L(HL)
34T(LH)
3|air
Wherein, H represents 1/4 wavelength thickness of the high refractive index medium film in multilayer dielectric film 10, and L represents 1/4 wavelength thickness of the low refracting medium rete in multilayer dielectric film 10, and T represents 1/4 wavelength thickness of thermoluminescent material AlN or GaN, (LH)
3represent that high refractive index medium film and low refractive index dielectric film are alternately laminated 3 times.
In described multi-cavity optical interference film filter layer 1, half wave resonances cavity material is the membraneous material of GaN or AlN or other large thermo-optical coeffecients, low extinction coefficient, relative to conventional optical medium material SiO
2the thermo-optical coeffecient of film, the thermo-optical coeffecient of AlN and GaN exceeds an order of magnitude.When changing optical filter temperature by micro-heater 2, there is relatively large change in the refractive index due to half wave resonances cavity material, thus can realize the adjustment of thin film center number of wavelengths nanometer to tens nanometer.Described multi-cavity optical interference film filter layer 1 can adopt existing technique to be prepared, and layers of material can deposit successively, and its thickness is accurately controlled by on-line monitoring, thus can realize the filtering characteristic of flat-top arrowband according to application demand.Compared with silicon materials, although the thermo-optical coeffecient of AlN and GaN is slightly low, but the energy gap of AlN and GaN is very high, there is relatively lower extinction coefficient, so can obtain more low optical losses in spike interference filter, wavelength tuning range or tuning power consumption still can meet the requirement of some optical communication applications simultaneously.
In addition, described Thermo-optic tunability wave filter can be applied in tunable optical receiver, tunable laser, DWDM optical performance monitor, light up/down multiplexer.
MEMS Thermo-optic tunability wave filter in the present embodiment can based on soi wafer or body silicon substrate, MEMS Bulk micro machining is adopted to make, for body silicon substrate, its main manufacturing process is as follows: 1) adopt electron beam evaporation process, sputtering technology or other thin film deposition processes to prepare multi-cavity optical interference film filter layer 1 in described body surface of silicon; 2) by metal sputtering, photoetching, the techniques such as wet etching, make micro-heater 2, microtemperature sensor 3 and lead pad 8 successively at multi-cavity optical interference film filter layer 1 upper surface; 3) make etched features by lithography at body silicon substrate lower surface, and utilize etching or corrosion technology unwanted body layer-of-substrate silicon to be removed, until expose described multi-cavity optical interference film filter layer 1, form light hole.
As mentioned above, the invention provides a kind of MEMS Thermo-optic tunability wave filter of low optical losses, described MEMS Thermo-optic tunability wave filter comprises multi-cavity optical interference film filter layer 1 and the micro-heater 2 that half wave resonances chamber adopts AlN or GaN thermo-optic tunable dielectric thin-film material 11, by controlling the working current of described micro-heater 2, the centre wavelength of described MEMS Thermo-optic tunability wave filter can be regulated.The present invention adopts AlN, GaN as the cavity material in half wave resonances chamber in FP chamber, and it had both had higher thermo-optical coeffecient, had again lower extinction coefficient, significantly can reduce the optical loss of narrow-band tunable filter.The present invention effectively can improve the problem that the large and filter shape of optical loss that existing MEMS thermo-optical tunability wave filter exists can not meet application, has a good application prospect at optical communication, light sensory field.So the present invention effectively overcomes various shortcoming in existing Thermo-optic tunability wave filter technology and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (12)
1. the MEMS Thermo-optic tunability wave filter of a low optical losses, it is characterized in that, described MEMS Thermo-optic tunability wave filter comprises multi-cavity optical interference film filter layer and the micro-heater that half wave resonances chamber adopts AlN or GaN thermo-optic tunable dielectric thin-film material, by controlling the working current of described micro-heater, the centre wavelength of described MEMS Thermo-optic tunability wave filter can be regulated.
2. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 1, it is characterized in that: described multi-cavity optical interference film filter layer comprises and adopts the half wave resonances chamber of AlN or GaN thermo-optic tunable dielectric thin-film material and multilayer dielectric film is alternately laminated forms, described multilayer dielectric film is by high refractive index medium film and low refractive index dielectric film is alternately laminated forms.
3. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 2, is characterized in that: described multi-cavity optical interference film filter layer is the narrowband optical interference filter formed by the optical interference chamber of N number of cascade, wherein, and N >=1.
4. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 3, is characterized in that: as N>1, and the band that described multi-cavity optical interference film filter layer can realize light wave leads to planarization.
5. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 1, it is characterized in that: described micro-heater is the electric resistance heater be made up of metal film strips or semiconductor film bar, described micro-heater is positioned at outside the hot spot of working beam, with working beam center for symmetric points are centrosymmetric distribution.
6. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 1, it is characterized in that: described MEMS Thermo-optic tunability wave filter also comprises microtemperature sensor, described microtemperature sensor is the resistance temperature detector be made up of metal film strips or semiconductor film bar, it is positioned at outside the hot spot of working beam, and described microtemperature sensor can provide the temperature signal of interference filter for the close-loop feedback of tuning wavelength.
7. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 1, is characterized in that: by controlling the working current of micro-heater, can realize the spectral tuning of described multi-cavity optical interference film filter layer centre wavelength 0nm ~ 50nm.
8. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 1, it is characterized in that: described multi-cavity optical interference film filter layer is formed on single-crystal silicon support film, described single-crystal silicon support film is connected by monocrystalline silicon hanging beam with silicon substrate, described silicon substrate is etched with light hole, form heat insulation microstructure to reduce heat transfer, thus reduce the tuning power consumption of electric heating.
9. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 8, is characterized in that: the thickness of described single-crystal silicon support film is 3 μm ~ 100 μm, and the backside deposition of described single-crystal silicon support film has optical anti-reflective film.
10. the MEMS Thermo-optic tunability wave filter of low optical losses according to claim 8, is characterized in that: the size of described light hole is greater than the spot size of working beam.
The MEMS Thermo-optic tunability wave filter of 11. low optical losses according to claim 1, it is characterized in that: described multi-cavity optical interference film filter layer can be formed on silicon substrate, described silicon substrate is etched with light hole, and described multi-cavity optical interference film filter layer is directly exposed at described light hole place.
The MEMS Thermo-optic tunability wave filter of 12. low optical losses according to claim 1, is characterized in that: described Thermo-optic tunability wave filter can be applied in tunable optical receiver, tunable laser, DWDM optical performance monitor, light up/down multiplexer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111580288A (en) * | 2020-06-11 | 2020-08-25 | 京东方科技集团股份有限公司 | Tunable thermo-optical filter, and adjusting method and manufacturing method thereof |
| CN112578494A (en) * | 2019-09-30 | 2021-03-30 | 福州高意光学有限公司 | Tunable optical filter |
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| CN1864091A (en) * | 2003-10-07 | 2006-11-15 | 伊吉斯半导体公司 | Tunable optical filter with heater on a cte-matched transparent substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112578494A (en) * | 2019-09-30 | 2021-03-30 | 福州高意光学有限公司 | Tunable optical filter |
| CN111580288A (en) * | 2020-06-11 | 2020-08-25 | 京东方科技集团股份有限公司 | Tunable thermo-optical filter, and adjusting method and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104714311B (en) | 2018-07-31 |
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