CN103730543B - 发光二极管的制作方法 - Google Patents
发光二极管的制作方法 Download PDFInfo
- Publication number
- CN103730543B CN103730543B CN201210381744.3A CN201210381744A CN103730543B CN 103730543 B CN103730543 B CN 103730543B CN 201210381744 A CN201210381744 A CN 201210381744A CN 103730543 B CN103730543 B CN 103730543B
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- emitting diode
- light emitting
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 29
- 239000000758 substrate Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (3)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210381744.3A CN103730543B (zh) | 2012-10-10 | 2012-10-10 | 发光二极管的制作方法 |
TW101137850A TW201419581A (zh) | 2012-10-10 | 2012-10-12 | 發光二極體的製作方法及由該製作方法製作的發光二極體 |
US13/942,713 US8846428B2 (en) | 2012-10-10 | 2013-07-16 | Method for manufacturing light emitting diode chip with electrodes having smooth surfaces |
JP2013207099A JP2014078711A (ja) | 2012-10-10 | 2013-10-02 | 発光ダイオード及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210381744.3A CN103730543B (zh) | 2012-10-10 | 2012-10-10 | 发光二极管的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103730543A CN103730543A (zh) | 2014-04-16 |
CN103730543B true CN103730543B (zh) | 2016-12-21 |
Family
ID=50432977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210381744.3A Expired - Fee Related CN103730543B (zh) | 2012-10-10 | 2012-10-10 | 发光二极管的制作方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8846428B2 (zh) |
JP (1) | JP2014078711A (zh) |
CN (1) | CN103730543B (zh) |
TW (1) | TW201419581A (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104124311B (zh) * | 2014-08-12 | 2016-08-24 | 厦门市三安光电科技有限公司 | 一种制作发光二极管钝化保护层的方法 |
US10381508B2 (en) | 2014-11-19 | 2019-08-13 | National Sun Yat-Sen University | Light emitting element with an enhanced electroluminescence effect |
TWI652372B (zh) | 2015-06-30 | 2019-03-01 | 晶元光電股份有限公司 | 半導體發光裝置及其形成方法 |
TWI709661B (zh) * | 2015-06-30 | 2020-11-11 | 晶元光電股份有限公司 | 半導體發光裝置及其形成方法 |
CN106252470B (zh) * | 2016-08-30 | 2018-08-14 | 厦门市三安光电科技有限公司 | 一种氮化镓基发光二极管及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945860A (zh) * | 2005-10-06 | 2007-04-11 | 大连路美芯片科技有限公司 | 一种发光二极管的电极制备方法 |
CN101051661A (zh) * | 2006-04-05 | 2007-10-10 | 三星电机株式会社 | GaN基半导体发光器件及其制造方法 |
CN102263173A (zh) * | 2010-05-28 | 2011-11-30 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61102732A (ja) * | 1984-10-26 | 1986-05-21 | Matsushita Electronics Corp | 半導体素子の製造方法 |
JP3586293B2 (ja) * | 1994-07-11 | 2004-11-10 | ソニー株式会社 | 半導体発光素子 |
JP3292044B2 (ja) * | 1996-05-31 | 2002-06-17 | 豊田合成株式会社 | p伝導形3族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法 |
JP3736181B2 (ja) * | 1998-05-13 | 2006-01-18 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
JP3449535B2 (ja) * | 1999-04-22 | 2003-09-22 | ソニー株式会社 | 半導体素子の製造方法 |
JP2007158262A (ja) * | 2005-12-08 | 2007-06-21 | Rohm Co Ltd | 半導体発光素子の製造方法 |
JP5057398B2 (ja) * | 2008-08-05 | 2012-10-24 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP5081124B2 (ja) * | 2008-10-28 | 2012-11-21 | パナソニック株式会社 | 半導体発光素子の製造方法 |
-
2012
- 2012-10-10 CN CN201210381744.3A patent/CN103730543B/zh not_active Expired - Fee Related
- 2012-10-12 TW TW101137850A patent/TW201419581A/zh unknown
-
2013
- 2013-07-16 US US13/942,713 patent/US8846428B2/en not_active Expired - Fee Related
- 2013-10-02 JP JP2013207099A patent/JP2014078711A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945860A (zh) * | 2005-10-06 | 2007-04-11 | 大连路美芯片科技有限公司 | 一种发光二极管的电极制备方法 |
CN101051661A (zh) * | 2006-04-05 | 2007-10-10 | 三星电机株式会社 | GaN基半导体发光器件及其制造方法 |
CN102263173A (zh) * | 2010-05-28 | 2011-11-30 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8846428B2 (en) | 2014-09-30 |
TW201419581A (zh) | 2014-05-16 |
US20140099739A1 (en) | 2014-04-10 |
CN103730543A (zh) | 2014-04-16 |
JP2014078711A (ja) | 2014-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160606 Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant after: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: ZHANJING Technology (Shenzhen) Co.,Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
|
C41 | Transfer of patent application or patent right or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Yang Jiyuan Inventor before: Lian Yaqi Inventor before: Hong Zijian |
|
COR | Change of bibliographic data | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20161010 Address after: 100083, Beijing, Haidian District Qinghe Anning East Road No. 4, Building 29, room 18, room two Applicant after: Beijing Times Haoding Energy Saving Technology Co.,Ltd. Address before: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant before: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 201-4, Unit 1, Building 2, No. 10, Courtyard 1, Gaolizhang Road, Haidian District, Beijing Patentee after: CHINA KEHAODING ENERGY SAVING TECHNOLOGY (BEIJING) Co.,Ltd. Address before: Room 29, 2nd Floor, Building 4, 18 Anningzhuang East Road, Qinghe, Haidian District, Beijing 100083 Patentee before: Beijing Times Haoding Energy Saving Technology Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161221 Termination date: 20211010 |