CN103718665A - 用于提供电磁屏蔽的合成物 - Google Patents

用于提供电磁屏蔽的合成物 Download PDF

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CN103718665A
CN103718665A CN201280038629.4A CN201280038629A CN103718665A CN 103718665 A CN103718665 A CN 103718665A CN 201280038629 A CN201280038629 A CN 201280038629A CN 103718665 A CN103718665 A CN 103718665A
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V·A·厄莫洛夫
M·A·奥克萨南
K·沙拉帕特
G·S·帕拉奥努
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Abstract

一种用于提供电磁屏蔽的合成物包括：多个伸长纳米结构；以及多个伸长传导元件。

Description

用于提供电磁屏蔽的合成物
技术领域
本发明的实施例涉及一种用于提供电磁屏蔽的合成物。
背景技术
电磁屏蔽具有许多应用。它可以例如用来为电子部件屏蔽射频（RF）电磁辐射或者防止从部件辐射电子RF电磁辐射。如果诸如移动蜂窝电话收发器之类的射频发送器与其它电子部件近邻，则这可能特别重要。
发明内容
根据本发明的各种、但是未必所有实施例，提供一种用于提供电磁屏蔽的合成物，该合成物包括：多个伸长纳米结构；以及多个伸长传导元件。
合成物材料可以例如是被模制成不同形状的薄壳。它因此可以提供有效电磁屏蔽而不占用在手持便携式电子装置中稀缺的宝贵空间。
附图说明
为了更好地理解本发明的实施例的各种示例，现在将仅通过示例参照附图，在附图中：
图1示意地图示用于提供电磁屏蔽的合成物；
图2示意地示范由合成物实现的电磁屏蔽；并且
图3示意地图示使用合成物材料以用于电磁屏蔽的装置。
具体实施方式
图1示意地图示用于提供电磁屏蔽12的合成物10。
合成物10包括多个纳米结构2和多个传导元件4。
在这一示例中，多个纳米结构是伸长纳米结构2，并且多个传导元件是伸长传导元件。伸长在这一意义上意味着长度大于宽度。对于伸长纳米结构和/或伸长传导元件，由长度与宽度之比定义的长宽比可以在一些实施例中例如大于100或者甚至1000。
在这一示例中，多个伸长纳米结构2和多个伸长传导元件4形成各向异性混合物16。也就是说，一般而言，多个伸长纳米结构2和多个伸长传导元件4都未沿着特定矢量被对准。然而可能有其中这可能是所希望的应用。例如，如果射频电磁磁场的极化是已知的，则相对于极化的对准可能合乎需要。对准可以例如通过在制造期间施加应变力和/或电场来实现。
在所示示例中，多个伸长纳米结构2中的至少一些伸长纳米结构和多个伸长传导元件4中的至少一些伸长传导元件接触8以形成连接的网络14。
连接的网络14由粘合剂维持，该粘合剂填充在多个伸长纳米结构2与多个伸长传导元件4之间的空隙中的至少一些空隙。粘合剂可以例如是聚合物。
选择伸长纳米结构2的密度和伸长传导元件4的密度以控制连接的网络14的连接度。通过增加伸长纳米结构2的密度和伸长传导元件4的密度，有可能增加伸长纳米结构2与伸长传导元件4之间的接触8的数目。如果将网络的连接度定义为网络节点（接触8）的数目，则随着接触8的数目增加，网络的连接度增加。
可能希望控制‘电连接度’。如果将网络的连接度定义为网络节点（接触8）的数目，则将网络的‘电连接度’定义为具有较低电阻抗网络节点（较低阻抗接触8）的数目。例如，伸长纳米结构2与伸长传导元件4之间的接触8可以形成其中接触电阻抗低于特定值的较低电阻抗节点，或者它可以形成其中接触电阻抗高于特定值的较高电阻抗节点。接触电阻抗可以包括电阻分量（component）R和/或电抗分量jX。电抗分量可以包括电容分量和/或电感分量。选择伸长纳米结构2的密度和特性以及伸长传导元件4的密度和特性以控制连接的网络14和接触电阻抗在它们接触时的连接度。
多个伸长纳米结构2可以由纳米结构单个种类（类）构成。
备选地，多个伸长纳米结构2可以由多个不同纳米结构种类（类）构成。
可以用不同方式定义种类（类）。
例如可以在结构上定义‘种类’。在这一示例中，相同的纳米结构种类具有相同或者相似的结构。例如它们可以都为纳米管（单壁或者多壁纳米管）、纳米纤维、纳米线或者纳米纱。
作为另一示例，可以在组成上定义‘种类’。在这一示例中，相同的纳米结构种类具有相同或者相似的组成。例如它们可以都是由碳、氮化硼、碳化硅、金属或者例如能够形成纳米管的其它材料形成的纳米结构。
作为另一示例，可以在几何上定义‘种类’。在这一示例中，相同的纳米结构种类可以是具有相同的手性矢量的纳米管。
作为另一示例，可以在功能上定义‘种类’。在这一示例中，相同的纳米结构种类具有相同的功能特征，例如传导性。它们可以例如都是半传导的或是窄带隙半传导的（narrow band gapsemiconducting）或者金属传导的。
也应当理解可以使用一些其它公共特性、例如长度来定义‘种类’。
此外可以使用任何特性组合或者子组合来定义‘种类’。例如可以在结构上和/或在组成上和/或在几何形状上和/或在功能上和/或使用长度等来定义种类（类）。
伸长传导元件4具有金属传导性。它们可以是金属、例如它们可以是金属接线。它们也可以是纳米结构（纳米结构在本文中意味着具有少于1μm的最小尺度的结构）。
在图2中图示合成物10所提供的电磁屏蔽12。这一幅图图示用于不同样本的谐振腔的反射谱。
迹线20图示在谐振腔为空时的强谐振。
迹线22图示在谐振腔包括样本时的强谐振，该样本仅包括伸长传导元件4（具有宽度90和长度2cm的Cu接线）。
迹线24图示在谐振腔包括样本时的强谐振，该样本仅包括具有宽度200nm和长度5mm的多壁碳纳米管（MCNT）纱。
迹线26图示在谐振腔包括合成物10的样本时的很弱谐振，该样本包括多个伸长纳米管2和多个伸长传导元件4作为各向异性混合物。
伸长纳米管包括具有宽度200nm和长度5mm的单个种类、多壁碳纳米管（MCNT）纱。伸长传导元件4是具有宽度90cm和长度2cm的Cu接线。
因此在实验上证实多个伸长纳米管2和多个伸长传导元件4的混合在相同浓度给予比仅多个伸长纳米结构2或者多个伸长传导元件4好得多的屏蔽效率。将观察到有多个伸长纳米结构2和多个伸长传导元件4的异构组合的谐振（迹线26）在与仅包括多个伸长纳米结构2的样本（迹线24）或者仅包括多个伸长传导元件4的样本（迹线22）比较时的出人意料的减少。
认为在多个伸长纳米结构2中的至少一些伸长纳米结构与多个伸长传导元件4中的至少一些伸长传导元件之间形成的异构接触提供该出人意料的减少。
对于高长宽比填充物/聚合物合成物，已经开发若干技术以更好地分散填充物、包括原位聚合、溶液处理、旋铸（spin casting）和熔体纺丝。此外，一些处理辅助已经用来增强分散、比如声处理（sonification）、磁场、表面活性剂和官能化。
广泛的天然或者合成聚合树脂可以用作合成物材料中的填充物。适当合成聚合树脂包括但不限于聚乙烯、聚丙烯、聚氯乙稀、不饱和聚酯等。
聚合材料可以包含聚合物领域中公知的其它成分和添加物以提供各种希望的性质。
在合成物中的伸长纳米结构2和伸长传导元件4的量将通常基于例如是0.01至5个重量百分比的聚合物数量而在0.001至15个重量百分比的范围中。
伸长纳米结构2和伸长传导元件4通常是在聚合材料的整体内基本上均匀分散、但是也可以用量（例如浓度）从材料的外表面朝着中间或者从一个表面朝着另一表面增加等成分方式存在。
将选择伸长纳米结构2的量以对于希望的电磁屏蔽有效。
电磁屏蔽具有许多应用。图3示意地图示装置30，其中合成物材料10用来提供对电磁体辐射源32和电子部件34的电磁屏蔽。在这一示例中，源在装置30内部，但是在未图示的其它示例中，源32可以在装置30之外。
电磁辐射可以例如时射频（RF）电磁辐射。例如源32可以是射频发送器、例如如与（一个或多个）电子部件34近邻的移动蜂窝电话收发器。
合成物材料可以例如是被模制成不同形状的薄壳。它因此可以提供有效电磁屏蔽而不占用在手持便携式电子装置中稀缺的宝贵空间。
虽然已经参照各种示例在先前段落中描述本发明的实施例，但是应当理解可以进行对给出的示例的修改而不脱离如要求保护的本发明的范围。
可以在除了明确描述的组合之外的组合中使用在先前描述中描述的特征。
虽然已经参照某些特征描述功能，但是那些功能可以由无论是否描述的其它特征可执行。
虽然已经参照某些实施例描述特征，但是那些特征也可以存在于无论是否描述的其它实施例中。
尽管在前文说明书中努力引起对本发明的被认为特别重要的那些特征的关注，但是应当理解，申请人在参照上文和/或附图中示出的任何可授予专利的特征或者特征组合方面都要求保护而无论是否已经对它们加以特别强调。

Claims (20)

1.一种用于提供电磁屏蔽的合成物，包括：
多个伸长纳米结构；以及
多个伸长传导元件。
2.根据权利要求1所述的合成物，其中所述多个伸长纳米结构中的至少一些伸长纳米结构与所述多个伸长传导元件中的至少一些伸长传导元件接触以形成连接的网络。
3.根据前述权利要求中任一项所述的合成物，其中所述伸长纳米结构的密度和所述伸长传导元件的密度被选择以控制所述连接的网络的连接度。
4.根据权利要求1所述的合成物，其中所述多个伸长纳米结构中的至少一些伸长纳米结构与所述多个伸长传导元件中的至少一些伸长传导元件接触以形成电连接的网络。
5.根据前述权利要求中任一项所述的合成物，其中所述伸长纳米结构平均具有大于100的长宽比。
6.根据前述权利要求中任一项所述的合成物，其中所述伸长纳米结构由单个纳米结构种类构成。
7.根据权利要求1至5中任一项所述的合成物，其中所述伸长纳米结构由多个不同纳米结构种类构成。
8.根据权利要求6或7中任一项所述的合成物，其中一个纳米结构种类或者所述纳米结构种类从包括如下各项的组中选择：纳米管、多壁纳米管、纳米纤维、纳米线、碳纳米管纱。
9.根据权利要求6、7或8中任一项所述的合成物，其中一个纳米结构种类或者所述纳米结构种类从包括如下各项的组中选择：碳、氮化硼、碳化硅、金属以及能够形成纳米管的其它材料。
10.根据权利要求6至9中任一项所述的合成物，其中一个纳米结构种类具有相同的手性矢量，并且不同纳米结构种类具有不同的手性矢量。
11.根据权利要求6至10中任一项所述的合成物，其中一个纳米结构种类具有相同的长度，并且其中不同纳米结构种类具有不同的长度。
12.根据权利要求6至11中任一项所述的合成物，其中一个纳米结构种类具有相同的传导性，并且不同纳米结构种类具有不同的传导性。
13.根据前述权利要求中任一项所述的合成物，其中所述伸长传导元件具有金属传导性。
14.根据前述权利要求中任一项所述的合成物，其中所述伸长传导元件是金属的。
15.根据前述权利要求中任一项所述的合成物，其中所述伸长传导元件是纳米结构。
16.根据前述权利要求中任一项所述的合成物，其中所述伸长传导元件是金属线。
17.根据前述权利要求中任一项所述的合成物，还包括粘合剂。
18.根据权利要求17所述的合成物，其中所述粘合剂是聚合物。
19.一种方法，包括：
将多个伸长纳米结构和多个伸长传导元件与至少一种其它材料混合以形成用于提供电磁屏蔽的合成物。
20.根据权利要求19所述的方法，其中所述伸长纳米结构和所述伸长传导元件的量在质量上是所述至少一种其它材料的0.001%至15%。
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