CN103715049B - The method of plasma processing apparatus and adjusting substrate edge region processing procedure speed - Google Patents
The method of plasma processing apparatus and adjusting substrate edge region processing procedure speed Download PDFInfo
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- CN103715049B CN103715049B CN201210378282.XA CN201210378282A CN103715049B CN 103715049 B CN103715049 B CN 103715049B CN 201210378282 A CN201210378282 A CN 201210378282A CN 103715049 B CN103715049 B CN 103715049B
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Abstract
A method for plasma processing apparatus and adjusting substrate edge region processing procedure speed, comprising: a chamber; Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, above described electrostatic chuck, be placed with substrate; Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas enters described chamber by described gas spray; Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply; Focusing ring, it is arranged at around described substrate; Edge electrodes, it is near the fringe region of described substrate, and described edge electrodes is connected with the second radio-frequency power supply, phase shifter, it is connected in described the first radio-frequency power supply and the second radio-frequency power supply. The present invention is compensate for edge effects effectively, and, avoid the arc discharge and the sparking that more closely produce owing to putting on the voltage distances in substrate center region and substrate edge region.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of plasma processing apparatus and regulate baseThe method of sheet fringe region processing procedure speed.
Background technology
Plasma processing apparatus utilizes the operation principle of vacuum reaction chamber to carry out semiconductor chip and plasmaThe processing of dull and stereotyped substrate. The operation principle of vacuum reaction chamber is in vacuum reaction chamber, to pass into contain suitablyThe reacting gas of etching agent or deposit source gas, and then this vacuum reaction chamber is carried out to RF energy input,With activated reactive gas, light and maintain plasma, so that the material on difference etching substrate surfaceLayer or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat are processed.For instance, capacitive plasma reactor has been widely used for processing semiconductor substrate and demonstrationDevice flat board, in capacitive plasma reactor, when radio-frequency power be applied to one of two electrodes orThe two time, just between pair of parallel electrode, form capacitive discharge.
The edge effect of semiconductor arts piece is a problem of puzzlement semiconductor industry. So-called semiconductor workThe edge effect of skill part refers in plasma treatment procedure, because plasma is subject to electric field controls, andThe field intensity of the two poles of the earth edge can be subject to the impact of rim condition up and down, always some electric field line bending, and leadSend a telegraph field edge part field intensity inequality, and then cause the plasma density of this part inhomogeneous. At this kindIn situation, the semiconductor arts piece of producing also exists a circle to process inhomogeneous region around. This is notEvenly phenomenon is more obvious in the time that rf electric field frequency is higher, is greater than 60MHZ is even greater than at rf frequencyWhen 100MHZ, the inhomogeneities degree of this plasma concentration has been difficult to as quiet in being positioned at other device againThe gathering ring at electricity chuck edge regulates and controls.
Because semiconductor arts piece is circular, therefore more outer ring area is larger, each work of marginal portionThe not good yield rate that will cause of the homogeneity of skill link significantly declines. In the present that generally adopts 300MHZ processing procedureMy god, the loss that semiconductor arts piece edge effect brings is more huge.
Therefore, need in the industry to improve simply and effectively edge effect, improve processing procedure homogeneity.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma processing apparatus.
First aspect present invention provides a kind of plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, described quietElectricity chuck top is placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas passes throughDescribed gas spray enters described chamber;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate, and described edge electrodes is connected with secondRadio-frequency power supply;
Phase shifter, it is connected in described the first radio-frequency power supply and the second radio-frequency power supply.
Further, described edge electrodes is arranged among described focusing ring, wherein, described focusing ring byInsulating materials is made.
Further, described plasma processing apparatus also comprises one first insulator, described in it is arranged atFocusing ring below, wherein, described edge electrodes is arranged among described the first insulator.
Further, described plasma processing apparatus also comprises:
Edge ring, it is positioned at described focusing ring periphery;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
Further, described the first radio-frequency power supply and the second radio-frequency power supply have same or different frequencyRate.
Further, described the second radio-frequency power supply is greater than 13MHZ.
Further, described the second radio-frequency power supply be 13.56MHZ, 27MHZ, 60MHZ, 110MHZ,One of 120MHZ.
Further, described the second radio-frequency power supply is less than 13MHZ.
Further, between described the second radio-frequency power supply and described edge electrodes, be also connected with second in turnMatch circuit and the second high frequency filter.
Further, between described the first radio-frequency power supply and bottom electrode, be also connected with the first match circuit.
Further, described bottom electrode is also connected with the 3rd radio-frequency power supply, at described the 3rd radio-frequency power supply andBetween described bottom electrode, be also connected with the 3rd match circuit, wherein, described the first radio-frequency power supply is greater than13MHZ, described the 3rd radio-frequency power supply is less than 13MHZ.
Further, the magnitude of voltage that the first radio-frequency power supply produces is V1＝V10sin(ωHT+ φ), the second radio frequencyThe magnitude of voltage of power generation is V2＝V20sin(ωHT+ φ+Δ φ), and V10>V20。
Second aspect present invention provides a kind of plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, described quietElectricity chuck top is placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas passes throughDescribed gas spray enters described chamber;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate;
Phase shifter, it is connected in described the first radio-frequency power supply,
Wherein, between described the first radio-frequency power supply and described bottom electrode, be also connected with the first pair net in turnNetwork and power divider, wherein, described power divider is connected in described phase shifter, and described phase shifter entersOne step connects described edge electrodes.
Further, described edge electrodes is arranged among described focusing ring, wherein, described focusing ring byInsulating materials is made.
Further, described plasma processing apparatus also comprises one first insulator, described in it is arranged atFocusing ring below, wherein, described edge electrodes is arranged among described the first insulator.
Further, described plasma processing apparatus also comprises:
Edge ring, it is positioned at described focusing ring periphery;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
Further, described the first radio-frequency power supply is greater than 13MHZ.
Further, described the first radio-frequency power supply be 13.56MHZ, 27MHZ, 60MHZ, 110MHZ,One of 120MHZ.
Further, between described the first radio-frequency power supply and bottom electrode, be also connected with the first match circuit.
Further, described bottom electrode is also connected with the 3rd radio-frequency power supply, at described the 3rd radio-frequency power supply andBetween described bottom electrode, be also connected with the 3rd match circuit, wherein, described the first radio-frequency power supply is greater than13MHZ, described the 3rd radio-frequency power supply is less than 13MHZ.
Further, the magnitude of voltage that is coupled in described substrate center region is V1＝V10sin(ωHT+ φ), couplingClosing in described substrate edge region magnitude of voltage is V2＝V20sin(ωHT+ φ+Δ φ), and V10>V20。
Third aspect present invention provide a kind of for described in first aspect present invention or second aspect etc.The method of the adjusting substrate edge region processing procedure speed of gas ions treating apparatus, is characterized in that described sideMethod comprises the steps:
In processing procedure process, utilize described phase shifter optionally to adjust and be coupled in described substrate center regionWith the phase difference of the voltage of the RF energy of fringe region, to adjust substrate edge region processing procedure speed.
Particularly, utilize described phase shifter optionally to adjust and be coupled in described substrate center region and edgeThe Δ φ of the voltage of the RF energy in region, makes the electricity of the RF energy that is coupled in described substrate center regionPressure value is V1＝V10sin(ωHT+ φ), the magnitude of voltage that is coupled in the RF energy in described substrate edge region isV2＝V20sin(ωHT+ φ+Δ φ), and V10>V20。
Plasma processing apparatus provided by the invention compensate for edge effects effectively, and, avoidDue to the arc discharge that puts on the voltage distances in substrate center region and substrate edge region and more closely produceAnd sparking.
Brief description of the drawings
Fig. 1 is the structural representation of the plasma processing apparatus of prior art;
Fig. 2 is the structural representation of the plasma processing apparatus of a specific embodiment according to the present invention;
Fig. 3 is the structural representation of the plasma processing apparatus of another specific embodiment according to the present invention;
Fig. 4 is the structural representation of the plasma processing apparatus of another specific embodiment according to the present invention;
Fig. 5 is the structural representation of going back the plasma processing apparatus of a specific embodiment according to the present invention;
Fig. 6 is the first radio-frequency power supply of a specific embodiment and the phase of the second radio-frequency power supply according to the present inventionPosition schematic diagram.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of the plasma processing apparatus of prior art, as shown in Figure 1, wait fromDaughter treating apparatus 300 comprises parallel top electrode 302 and bottom electrode 318, and bottom electrode 318 is connected withRadio-frequency power supply, substrate 306 is placed on base station. Also be provided with a focusing ring 312 in the periphery of substrate 306.Focusing ring 312 is also connected with a low frequency radio frequency power supply 322, at low frequency radio frequency power supply 322 and focusing ring 312Between be also in series with successively matching network 316 and radio-frequency filter 314. Prior art is passed through rf filteringDevice 314, to the low frequency radio frequency energy that is coupled of the focusing ring 312 near substrate 306 peripheries, changes processing procedure aroundRegion is positioned at sheath layer (Sheath) on substrate 306 carrys out the edge effect of compensates for substrate 306.
But, because the above-mentioned edge effect compensation mechanism of prior art is positioned at base by adjusting process zoneSheath layer (Sheath) on sheet 306 carrys out the edge effect of compensates for substrate 306. Particularly, sheath layer energyEnough accelerate the speed that charged particle bombards to substrate 306, i.e. particle projectile energy, but cannot change systemThe plasma in journey region, therefore compensation effect is good not.
In addition, the prior art dc source of also taking to be coupled carrys out compensate for edge effects in focusing ring. But,The voltage that dc source produces can not the amplitude of accommodation, is therefore not easy the coupling of regulation and control substrate edgeMagnitude of voltage, even can produce suddenly a very large numerical value, particularly arrive at DC voltage Energy CouplingFrom the region of substrate edge close together, easily produce arc discharge (arcing) and sparking (sparking),Thereby substrate is caused to irreversible infringement.
For improving the above-mentioned defect of prior art, the invention provides one can effective compensation edge effectPlasma processing apparatus.
Fig. 2 is the structural representation of the plasma processing apparatus of a specific embodiment according to the present invention.As shown in Figure 2, plasma processing apparatus 100 comprises a chamber 102, is positioned at described chamber 102 timesThe pedestal of side wherein, is provided with electrostatic chuck 112, at described electrostatic chuck above described pedestal112 tops are placed with a substrate 110. In described electrostatic chuck 112, be provided with a DC electrode (not shown),It produces electrostatic attraction by DC electrode described substrate 110 is held on to table on described electrostatic chuck 112On the ceramic layer of face. Gas spray 108 is arranged at described chamber 102 tops, described gas spray108 simultaneously also as top electrode, and process gas enters described chamber by described gas spray 108102. Particularly, described chamber 102 tops are provided with some gas sources, and processing procedure desired gas (comprises anti-Answer gas and modulation gas) enter gas spray 108, and pass through to arrange in gas spray 108Some gas passages enter chamber. Bottom electrode 116 is arranged among described pedestal, described in it is parallel toTop electrode, bottom electrode 116 is also connected with the first radio-frequency power supply 122. The first radio-frequency power supply 122 couplings are penetratedFrequently can come from described bottom electrode 116, make to form electric field between upper/lower electrode, reacting gas enters and is positioned atProcess volume between substrate 110 and gas spray 108 lower surfaces, and be subject to the generation that excites of this electric fieldPlasma, described plasma bombards and occurs with described substrate 110 towards substrate 110 apparent motionsReaction, thereby such as, to substrate 110 be correlated with processing procedure, etching or deposition etc. Described plasma placeReason device 100 also comprises a focusing ring 118, and it is arranged at around described substrate 110. Confinement ring 106Be used for outdoor processing procedure redundancy material discharge side.
In addition, plasma processing apparatus 100 of the present invention also comprises edge electrodes 120, and it is near instituteState the fringe region of substrate 110, described edge electrodes is connected with the second radio-frequency power supply 124. And, thisThe plasma processing apparatus 100 of invention also comprises phase shifter 126, and it is connected in institute directly or indirectlyState the first radio-frequency power supply 122 and the second radio-frequency power supply 124.
It should be noted that, the first radio-frequency power supply 122 is coupled in the central area of substrate 110, can controlThe processing procedure speed in substrate center processed region, and edge electrodes 120 is near the outer peripheral areas setting of substrate 110,Can control the processing procedure speed in substrate edge region. But edge electrodes 120 does not need to be particularly limitedFor being arranged on certain assembly of plasma processing apparatus 100, if its be close to substrate 110 outsideRegion arranges, and just can produce technique effect, reaches goal of the invention of the present invention, for example, and described limitEdge electrode 120 can be arranged in focusing ring 118, and the first insulator of focusing ring 118 belows focuses onEncircle the edge ring of 118 peripheries, and the second insulator of described edge ring below etc.
As shown in Figure 2, according to a specific embodiment of the present invention, described edge electrodes 120 is arranged atAmong described focusing ring 118, wherein, described focusing ring 118 is made up of insulating materials. Wherein, described inEdge electrodes 120 is further connected with the second radio-frequency power supply 124, and described the second radio-frequency power supply 124 also connectsBe connected to a phase shifter 126, described phase shifter 126 can also obtain the phase of described the first radio-frequency power supply 122Parallactic angle degree.
Particularly, radio-frequency energy has certain phase angle, under different phase angle values, has notSame amplitude, i.e. magnitude of voltage. Fig. 6 be a specific embodiment according to the present invention the first radio-frequency power supply andThe phase place schematic diagram of the second radio-frequency power supply, as shown in the figure, what S1 indicated is the ripple of the first radio-frequency power supply 122Deformation, what S2 indicated is the wave form varies of the second radio-frequency power supply 124. In the above-described embodiments, due toPhase shifter 126 is directly connected in the first radio-frequency power supply 122 and the second radio-frequency power supply 124, and it can obtainThe phase angle of the first radio-frequency power supply 122, and regulate accordingly the phase angle of the second radio-frequency power supply 124,Thereby the phase difference ΔΦ that can control the first radio-frequency power supply 122 and the second radio-frequency power supply 124, that is, makeThe first radio-frequency power supply 122 arrives bottom electrode 116 and the second radio-frequency power supply 124 and arrives substrate 110 edgesEdge electrodes 124 has different phase angles. For example, preferably, the second radio-frequency power supply 124 producesMagnitude of voltage should be less than the magnitude of voltage that the first radio-frequency power supply 122 produces. Particularly, suppose the first radio-frequency power supplyThe 122 magnitude of voltage V that produce1＝V10sin(ωHT+ φ), the magnitude of voltage that the second radio-frequency power supply 124 producesV2＝V20sin(ωHt+φ+Δφ)，V10>V20。
Phase shifter 126 can regulate the first radio-frequency power supply 122 and the second radio-frequency power supply 124 " synchronously "(in-phase) or " asynchronous " (outofphase), thereby make the first radio-frequency power supply 122 HesIt is different with the magnitude of voltage of edge electrodes 124 that the second radio-frequency power supply 124 is coupled in respectively bottom electrode 116. ToolBody ground, supposes that the first radio-frequency power supply 122 and the second radio-frequency power supply 124 are all high frequency. In the time that both are synchronous,Δ φ=0, the voltage difference minimum of the first radio-frequency power supply 122 and the second radio-frequency power supply 124; When both phase placesWhen angle is contrary, Δ φ=π, the voltage difference maximum of the first radio-frequency power supply 122 and the second radio-frequency power supply 124.Therefore, the characteristic of plasma (for example, concentration and the temperature etc. of active particle) can be penetrated along with firstThe variation of the phase difference of frequency power 122 and the second radio-frequency power supply 124 and changing, thus make furtherThe processing procedure speed (for example etching speed) of substrate edge is penetrated by changing the first radio-frequency power supply 122 and secondThe phase difference of frequency power 124 is controlled, thereby has compensated edge effect. Should be appreciated that substrate limitThe electric field location of edge can be coupled in by change the phase difference of the electrode of substrate center region and fringe regionAdjust.
If prior art is coupled in focusing ring and carrys out compensate for edge effects, DC voltage by dc source is setAmplitude (being magnitude of voltage) can not control, can cause arc discharge and sparking. But the present invention passes throughRegulate the phase difference of the first radio-frequency power supply 122 and the second radio-frequency power supply 124, thereby controlled the first radio frequencyThe voltage difference of power supply 122 and the second radio-frequency power supply 124, thus arc discharge and sparking effectively avoided.
Further, described the first radio-frequency power supply 122 and the second radio-frequency power supply 124 have same or differentThe frequency of sample.
Further, described the second radio-frequency power supply 124 is greater than 13MHZ. Preferably, described the first radio frequencyPower supply 122 and the second radio-frequency power supply 124 are all high frequency electric source, for example 60MHZ. If prior art is passed throughLow frequency radio frequency Electric source coupling is set and carrys out compensate for edge effects in substrate edge region, can only change processing procedure districtTerritory is positioned at the sheath layer on substrate, and sheath layer can accelerate the speed of charged particle to substrate bombardment, i.e. particleProjectile energy, but the plasma density of process zone cannot be changed, and therefore compensation effect is good not.The present invention adopts high-frequency radio frequency power supply to be connected in substrate outer peripheral areas, can effectively control process zoneThe distribution of plasma, thus effectively compensate edge effect.
Alternatively, described the second radio-frequency power supply is greater than 13MHZ.
Further, described the second radio-frequency power supply 124 be 13.56MHZ, 27MHZ, 60MHZ,One of 110MHZ, 120MHZ.
Further, between described the second radio-frequency power supply 124 and described edge electrodes 120, also connect successivelyBe connected to the second match circuit 127 and the second high frequency filter 128.
Further, between described the first radio-frequency power supply 122 and bottom electrode 116, be also connected with the first couplingCircuit 130.
Fig. 3 is the structural representation of the plasma processing apparatus of another specific embodiment according to the present invention,It shows the variation example of above-described embodiment, and wherein, described bottom electrode 116 is also connected with the 3rd radio frequency electricalSource 132 is also connected with the 3rd coupling between described the 3rd radio-frequency power supply 132 and described bottom electrode 116Circuit 134, wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than13MHZ. Plasma processing apparatus shown in Fig. 3 is dual frequency plasma treatment system(dual-frequencyplasmasystem), wherein the first radio-frequency power supply is high frequency, for maintain etc. fromDaughter. The 3rd radio-frequency power supply is low frequency bias power supply, is used to particle to accelerate to provide a bias potential.
According to above-described embodiment variation example, described bottom electrode 116 and described edge electrodes 120 connectBe connected to same radio-frequency power supply.
As shown in Figure 4, second aspect present invention provides a kind of plasma processing apparatus, plasmaTreating apparatus 100 comprises a chamber 102, is positioned at the pedestal of described chamber 102 belows, wherein, and in instituteThe top of stating pedestal is provided with electrostatic chuck 112, above described electrostatic chuck 112, is placed with a substrate110. In described electrostatic chuck 112, be provided with a DC electrode (not shown), it produces by DC electrodeRaw electrostatic attraction is held on described substrate 110 on the ceramic layer of described electrostatic chuck 112 upper surfaces.Gas spray 108 is arranged at described chamber 102 tops, described gas spray 108 also conducts simultaneouslyTop electrode, process gas enters described chamber 102 by described gas spray 108. Particularly, instituteState chamber 102 tops and be provided with some gas sources, processing procedure desired gas (comprises reacting gas and modulating gasBody) enter gas spray 108, and enter by the some gas passages that arrange in gas spray 108Enter chamber. Bottom electrode 116 is arranged among described pedestal, and it is parallel to described top electrode, bottom electrode116 are also connected with the first radio-frequency power supply 122. The first radio-frequency power supply 122 is coupled radio-frequency energy in described lower electricityThe utmost point 116, makes to form electric field between upper/lower electrode, and reacting gas enters and is positioned at substrate 110 and gas sprayDrench the process volume between 108 lower surface, and be subject to this electric field excite generation plasma, described etc.Gas ions is bombarded and reacts with described substrate 110 towards substrate 110 apparent motions, thereby to substrate110 be correlated with processing procedure, such as etching or depositions etc. Described plasma processing apparatus 100 also comprisesOne focusing ring 118, it is arranged at around described substrate 110. Confinement ring 106 is for by processing procedure redundancy thingMatter discharge side is outdoor.
Wherein, phase shifter 126 is connected in described the first radio-frequency power supply 122,
Wherein, between described the first radio-frequency power supply 122 and described bottom electrode 116, be also connected with in turnOne matching network 130 and power divider 136, wherein, described in described power divider 136 is connected inPhase shifter 126. The first radio-frequency power supply 122 is divided into two-way by power divider 136, and wherein carry on a roadTo bottom electrode 116 so that the RF energy at coupling-substrate center to be provided, another road be delivered to phase shifter 126 withThe RF energy that is coupled in substrate edge is provided, and the ratio of this two-way RF energy can be passed through power divisionDevice regulates.
Further, described edge electrodes 120 is arranged among described focusing ring 118, wherein, described inFocusing ring 118 is made up of insulating materials.
Further, described plasma processing apparatus 100 also comprises one first insulator, and it is arranged atDescribed focusing ring 118 belows, wherein, described edge electrodes 120 is arranged among described the first insulator.
Further, described plasma processing apparatus also comprises: edge ring, it is positioned at described focusing ring118 peripheries; The second insulator, it is positioned at described edge ring below, wherein, described edge electrodes settingAmong described edge ring or described the second insulator.
Further, described the first radio-frequency power supply 122 is greater than 13MHZ.
Further, described the first radio-frequency power supply 122 be 13.56MHZ, 27MHZ, 60MHZ,One of 110MHZ, 120MHZ.
Further, between described the first radio-frequency power supply 122 and bottom electrode 116, be also connected with the first couplingCircuit 130.
Described bottom electrode 116 is also connected with the 3rd radio-frequency power supply 132, at described the 3rd radio-frequency power supply 132And between described bottom electrode 116, be also connected with the 3rd match circuit 134, and wherein, described the first radio frequency electricalSource is greater than 13MHZ, and described the 3rd radio-frequency power supply is less than 13MHZ.
Further, the magnitude of voltage that the first radio-frequency power supply 122 produces is V1＝V10sin(ωHt+φ)。
Put on the electricity in substrate center region and substrate edge region if it will be appreciated by those skilled in the art thatPress close together, easily produce arc discharge and sparking, thereby substrate is caused to irreversible infringement.Therefore, the present invention can also not be arranged at edge electrodes in focusing ring, but specially for edge electrodes is establishedCount an extra assembly that holds, so that edge electrodes is arranged at apart from substrate edge larger distance, enter oneStep is avoided arc discharge and sparking.
Fig. 5 is the structural representation of going back the plasma processing apparatus of a specific embodiment according to the present invention.Plasma processing apparatus 200 comprises a chamber 202, is positioned at the pedestal of described chamber 202 belows, itsIn, above described pedestal, be provided with electrostatic chuck 212, above described electrostatic chuck 212, placeThere is a substrate 210. In described electrostatic chuck 212, be provided with a DC electrode (not shown), it is by straightStream electrode generation electrostatic attraction is held on described substrate 210 on the pottery of described electrostatic chuck 212 upper surfacesOn layer. Gas spray 208 is arranged at described chamber 202 tops, and described gas spray 208 is sameTime also as top electrode, process gas enters described chamber 202 by described gas spray 208. ToolBody ground, described chamber 202 tops are provided with some gas sources, and processing procedure desired gas (comprises reacting gasWith modulation gas) enter gas spray 208, and by the some gas that arrange in gas spray 108Body passage enters chamber. Bottom electrode 216 is arranged among described pedestal, and it is parallel to described top electrode,Bottom electrode 216 is also connected with the first radio-frequency power supply 222. The first radio-frequency power supply 222 be coupled radio-frequency energy inDescribed bottom electrode 216, makes to form electric field between upper/lower electrode, and reacting gas enters and is positioned at substrate 210And process volume between gas spray 208 lower surfaces, and be subject to this electric field excite generation plasma,Described plasma bombards and reacts with described substrate 210 towards substrate 210 apparent motions, therebySuch as, to substrate 210 be correlated with processing procedure, etching or deposition etc. Described plasma processing apparatus 200Also comprise a focusing ring 218, it is arranged at around described substrate 210. Confinement ring 206 is for by processing procedureRedundancy material discharge side is outdoor.
Further, according to another specific embodiment of the present invention, described plasma processing apparatus also wrapsDraw together edge ring 217, it is positioned at described dead ring 218 peripheries. The second insulator 215 is positioned at described edgeEncircle 217 belows, alternatively, described edge electrodes 220 is arranged at described edge ring 217 or described secondAmong insulator 215.
As shown in Figure 5, described edge electrodes 220 is preferably arranged among edge ring 217. NeedBright, being arranged so that of edge electrodes 220 also formed electric field between edge electrodes 220 and top electrode,The formation of electric field can compensate for edge effects, but also can make plasma bombardment receiving edges electricity simultaneouslyThe upper surface of the assembly of the utmost point 220, thus corroded lentamente. But, edge ring 217 small volumes,And change conveniently, engineer only needs to change in good time, and this is arranged at compared to edge electrodes 220Among focusing ring 218, have more superiority, can effectively save cost, avoid the wasting of resources.
Further, according to still another embodiment of the invention, described plasma processing apparatus 200 also wrapsDraw together one first insulator 214, it is arranged at described focusing ring 218 belows, alternatively, and described edge electricThe utmost point 120 is arranged at (not shown) among described the first insulator 214.
As shown in Fig. 2～Fig. 6, it is a kind of for the above-mentioned plasma of the present invention that third aspect present invention providesThe method of the adjusting substrate edge region processing procedure speed of body treating apparatus, is characterized in that described method bagDraw together following steps:
In processing procedure process, utilize described phase shifter optionally to adjust and be coupled in described substrate center regionWith the phase difference of the voltage of the RF energy of fringe region, to adjust substrate edge region processing procedure speed.
Particularly, utilize described phase shifter optionally to adjust and be coupled in described substrate center region and edgeThe Δ φ of the voltage of the RF energy in region, makes the electricity of the RF energy that is coupled in described substrate center regionPressure value is V1＝V10sin(ωHT+ φ), the magnitude of voltage that is coupled in the RF energy in described substrate edge region isV2＝V20sin(ωHT+ φ+Δ φ), and V10>V20。
Although content of the present invention has been done detailed introduction by above preferred embodiment, should be familiar withShould not be considered to limitation of the present invention to above-mentioned description. Read above-mentioned those skilled in the artAfter content, for multiple amendment of the present invention and substitute will be all apparent. Therefore, of the present inventionProtection domain should be limited to the appended claims.
Claims (23)
1. a plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, described quietElectricity chuck top is placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas passes throughDescribed gas spray enters described chamber;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate, and described edge electrodes is connected with secondRadio-frequency power supply;
Phase shifter, it is connected in described the first radio-frequency power supply and the second radio-frequency power supply, penetrates for controlling firstThe voltage difference of frequency power and the second radio-frequency power supply, to suppress arc discharge and sparking.
2. plasma processing apparatus according to claim 1, is characterized in that, described edge electricThe utmost point is arranged among described focusing ring, and wherein, described focusing ring is made up of insulating materials.
3. plasma processing apparatus according to claim 1, is characterized in that, described plasmaBody treating apparatus also comprises one first insulator, and it is arranged at described focusing ring below, wherein, and described limitEdge electrode is arranged among described the first insulator.
4. plasma processing apparatus according to claim 1, is characterized in that, described plasmaBody treating apparatus also comprises:
Edge ring, it is positioned at described focusing ring periphery;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
5. plasma processing apparatus according to claim 1, is characterized in that, described first penetratesFrequency power and the second radio-frequency power supply have same or different frequency.
6. plasma processing apparatus according to claim 5, is characterized in that, described second penetratesFrequency power is greater than 13MHZ.
7. plasma processing apparatus according to claim 6, is characterized in that, described second penetratesFrequency power is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
8. plasma processing apparatus according to claim 5, is characterized in that, described second penetratesFrequency power is less than 13MHZ.
9. plasma processing apparatus according to claim 1, is characterized in that, described secondBetween radio-frequency power supply and described edge electrodes, be also connected with the second match circuit and the second High frequency filter in turnDevice.
10. plasma processing apparatus according to claim 9, is characterized in that, described firstBetween radio-frequency power supply and bottom electrode, be also connected with the first match circuit.
11. plasma processing apparatus according to claim 10, is characterized in that, described lower electricityThe utmost point is also connected with the 3rd radio-frequency power supply, between described the 3rd radio-frequency power supply and described bottom electrode, is also connected withThe 3rd match circuit, wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is littleIn 13MHZ.
12. plasma processing apparatus according to claim 1, is characterized in that, the first radio frequencyThe magnitude of voltage of power generation is V1＝V10sin(ωHT+ φ), the magnitude of voltage that the second radio-frequency power supply produces isV2＝V20sin(ωHT+ φ+Δ φ), and V10>V20。
13. 1 kinds of plasma processing apparatus, comprising:
One chamber;
Be positioned at the pedestal of described chamber, above described pedestal, be provided with electrostatic chuck, described quietElectricity chuck top is placed with substrate;
Be positioned at the gas spray of described chamber roof, it is simultaneously also as top electrode, and process gas passes throughDescribed gas spray enters described chamber;
Be arranged at the bottom electrode among described pedestal, and be connected with the first radio-frequency power supply;
Focusing ring, it is arranged at around described substrate;
Edge electrodes, it is near the fringe region setting of described substrate;
Phase shifter, it is connected in described the first radio-frequency power supply,
Wherein, between described the first radio-frequency power supply and described bottom electrode, be also connected with power divider, itsIn, described power divider is connected in described phase shifter, and described phase shifter further connects described edge electricThe utmost point.
14. plasma processing apparatus according to claim 13, is characterized in that, described edgeElectrode is arranged among described focusing ring, and wherein, described focusing ring is made up of insulating materials.
15. plasma processing apparatus according to claim 13, is characterized in that, described grade fromDaughter treating apparatus also comprises one first insulator, and it is arranged at described focusing ring below, wherein, described inEdge electrodes is arranged among described the first insulator.
16. plasma processing apparatus according to claim 13, is characterized in that, described grade fromDaughter treating apparatus also comprises:
Edge ring, it is positioned at described focusing ring periphery;
The second insulator, it is positioned at described edge ring below,
Wherein, described edge electrodes is arranged among described edge ring or described the second insulator.
17. plasma processing apparatus according to claim 13, is characterized in that, described firstRadio-frequency power supply is greater than 13MHZ.
18. plasma processing apparatus according to claim 17, is characterized in that, described firstRadio-frequency power supply is one of 13.56MHZ, 27MHZ, 60MHZ, 110MHZ, 120MHZ.
19. plasma processing apparatus according to claim 13, is characterized in that, described firstBetween radio-frequency power supply and bottom electrode, be also connected with the first match circuit.
20. plasma processing apparatus according to claim 19, is characterized in that, described lower electricityThe utmost point is also connected with the 3rd radio-frequency power supply, between described the 3rd radio-frequency power supply and described bottom electrode, is also connected withThe 3rd match circuit, wherein, described the first radio-frequency power supply is greater than 13MHZ, and described the 3rd radio-frequency power supply is littleIn 13MHZ.
21. plasma processing apparatus according to claim 13, is characterized in that, are coupled in instituteThe magnitude of voltage of stating substrate center region is V1＝V10sin(ωHT+ φ), be coupled in described substrate edge region electricityPressure value is V2＝V20sin(ωHT+ φ+Δ φ), and V10>V20。
22. 1 kinds of adjusting bases for the plasma processing apparatus described in claim 1 to 21 any oneThe method of sheet fringe region processing procedure speed, is characterized in that, described method comprises the steps:
In processing procedure process, utilize described phase shifter optionally to adjust and be coupled in described substrate center regionWith the phase difference of the voltage of the RF energy of fringe region, to adjust substrate edge region processing procedure speed.
23. methods according to claim 22, is characterized in that, utilize described phase shifter selectiveThe Δ φ of the voltage of the RF energy that is coupled in described substrate center region and fringe region is adjusted on ground, makes couplingClosing in the magnitude of voltage of the RF energy in described substrate center region is V1＝V10sin(ωHT+ φ), be coupled in instituteThe magnitude of voltage of stating the RF energy in substrate edge region is V2＝V20sin(ωHT+ φ+Δ φ), and V10>V20。
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| CN201210378282.XA CN103715049B (en) | 2012-09-29 | 2012-09-29 | The method of plasma processing apparatus and adjusting substrate edge region processing procedure speed |
| TW102135125A TW201428845A (en) | 2012-09-29 | 2013-09-27 | Plasma processing apparatus and method for adjusting process rate of substrate edge region |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201621968A (en) * | 2014-12-01 | 2016-06-16 | Univ Feng Chia | Large-area plasma processing device and homogeneous plasma generation method |
| JP6540022B2 (en) * | 2014-12-26 | 2019-07-10 | 東京エレクトロン株式会社 | Mounting table and plasma processing apparatus |
| JP6539113B2 (en) * | 2015-05-28 | 2019-07-03 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
| CN106920729B (en) * | 2015-12-28 | 2019-05-31 | 中微半导体设备(上海)股份有限公司 | A kind of plasma processing apparatus and method of uniform etching substrate |
| KR101794654B1 (en) * | 2015-12-30 | 2017-11-07 | 엘지디스플레이 주식회사 | Apparatus for processing flexible substrate |
| CN107768299A (en) * | 2016-08-16 | 2018-03-06 | 北京北方华创微电子装备有限公司 | Bogey and semiconductor processing equipment |
| CN109216144B (en) * | 2017-07-03 | 2021-08-06 | 中微半导体设备(上海)股份有限公司 | Plasma reactor with low-frequency radio frequency power distribution adjusting function |
| CN109994355B (en) * | 2017-12-29 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Plasma reactor with low-frequency radio frequency power distribution adjusting function |
| CN110323117A (en) * | 2018-03-28 | 2019-10-11 | 三星电子株式会社 | Apparatus for processing plasma |
| CN110416049B (en) * | 2018-04-28 | 2022-02-11 | 中微半导体设备(上海)股份有限公司 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
| JP7140610B2 (en) * | 2018-09-06 | 2022-09-21 | 株式会社日立ハイテク | Plasma processing equipment |
| CN109273341B (en) | 2018-10-18 | 2021-01-08 | 北京北方华创微电子装备有限公司 | Plasma process method |
| KR102595900B1 (en) * | 2018-11-13 | 2023-10-30 | 삼성전자주식회사 | Plasma processing apparatus |
| CN112151343B (en) * | 2019-06-28 | 2023-03-24 | 中微半导体设备(上海)股份有限公司 | Capacitive coupling plasma processing device and method thereof |
| CN112259452B (en) * | 2020-10-21 | 2023-04-07 | 上海华力集成电路制造有限公司 | Control method of plasma dry etching process |
| CN114664622A (en) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
| CN114023620B (en) * | 2021-10-29 | 2023-07-14 | 德鸿半导体设备(浙江)有限公司 | Processing station for processing substrates |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
| CN1595618A (en) * | 2003-05-27 | 2005-03-16 | 三星电子株式会社 | Wafer edge etching apparatus and method |
| CN101150044A (en) * | 2006-09-19 | 2008-03-26 | 东京毅力科创株式会社 | Focus ring and plasma processing apparatus |
| CN101933402A (en) * | 2008-01-31 | 2010-12-29 | 应用材料股份有限公司 | Multiple phase RF power for electrode of plasma chamber |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6709547B1 (en) * | 1999-06-30 | 2004-03-23 | Lam Research Corporation | Moveable barrier for multiple etch processes |
| JP4527432B2 (en) * | 2004-04-08 | 2010-08-18 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| TW201206254A (en) * | 2010-01-12 | 2012-02-01 | Applied Materials Inc | Phase-modulated RF power for plasma chamber electrode |
-
2012
- 2012-09-29 CN CN201210378282.XA patent/CN103715049B/en active Active
-
2013
- 2013-09-27 TW TW102135125A patent/TW201428845A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
| CN1595618A (en) * | 2003-05-27 | 2005-03-16 | 三星电子株式会社 | Wafer edge etching apparatus and method |
| CN101150044A (en) * | 2006-09-19 | 2008-03-26 | 东京毅力科创株式会社 | Focus ring and plasma processing apparatus |
| CN101933402A (en) * | 2008-01-31 | 2010-12-29 | 应用材料股份有限公司 | Multiple phase RF power for electrode of plasma chamber |
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