CN103713016A - Palladium-doped stannic oxide wrapped carbon nano tube as well as preparation method and application of nano tube - Google Patents

Palladium-doped stannic oxide wrapped carbon nano tube as well as preparation method and application of nano tube Download PDF

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CN103713016A
CN103713016A CN201310737096.5A CN201310737096A CN103713016A CN 103713016 A CN103713016 A CN 103713016A CN 201310737096 A CN201310737096 A CN 201310737096A CN 103713016 A CN103713016 A CN 103713016A
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palladium
stannic oxide
tube
carbon nano
carbon nanometer
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CN103713016B (en
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刘善堂
胡清华
刘欢欢
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Wuhan Institute of Technology
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Abstract

The invention discloses a palladium-doped stannic oxide wrapped carbon nano tube which is prepared by using a gel-sol method. The carbon nano tube is structurally prepared by wrapping the surface of the carbon nano tube with palladium-doped stannic oxide crystal (Pd/SnO2), and the method comprises the following steps: dispersing the carbon nano tube into super-pure water in an ultrasonic mode, adding a stannic chlori precursor, dispersing in the ultrasonic mode again, subsequently adding a sodium tetrachloropalladate solution, uniformly stirring, mixing, adjusting the pH value to be 7-9, preserving for 0.2-36 hours at 30-200 DEG C so as to obtain milk white gel, washing and drying the gel, subsequently calcining at 200-700 DEG C so as to prepare the palladium-doped stannic oxide wrapped carbon nano tube. Due to adoption of noble metal and doping of the carbon nano tube, the gas-sensitive property of a stannic oxide-based gas sensor is greatly improved, the response and recovery time is shortened, and the low operation temperature is optimal.

Description

Palladium doping stannic oxide enveloped carbon nanometer tube and its preparation method and application
Technical field
The invention belongs to field of inorganic materials, relate to a kind of palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO that utilizes sol-gal process to prepare 2/ CNT).
Background technology
The gases such as that metal-oxide semiconductor (MOS) gas sensor is widely used in is explosive, poisonous, environmental hazard detect.At present, modal metal oxide sensitive material has ZnO, SnO 2, Fe 2o 3, TiO 2deng, SnO wherein 2it is the most extensive that system is applied to gas sensor.Tin ash based powders and membraneous material have many kinds of preparation methods, as powder sintering, chemical vapour deposition technique, spray pyrolysis method, sol-gel method, radio-frequency magnetron sputter method, pulsed laser deposition, relatively play other technology, adopting sol-gel method to prepare tin ash sill has many advantages, so apply more extensively.Its main advantage has: cost of manufacture is cheap, and instrument and equipment is simple, can at lower temperature, make material, can also control the form of film, and most important advantage is to adopt sol-gel method to adulterate than being easier to.At present, a large amount of researchs show, the three large principal elements that affect oxide semiconductor sensor are as follows: the validity of sensing capabilities (2) the gas sensing film of (1) crystalline metal oxide microstructure of gas sensing film (be control) (3) function of receptors (be load acceptor, for example noble metal or metal oxide).About the sensing capabilities of crystalline metal oxide, the reports such as Xu, the response time of sensor can be along with SnO 2crystallite dimension reduce shorten rapidly.Recently, Yamazoe etc. has proposed theoretical model and the formula of crystalline semiconductor depletion layer.For the validity of gas sensing film, be by experiment or the theoretical vital role of gas sensing film microstructure to gas sensor that all detected.Sakai etc. pass through to SnO 2in colloidal sol, adding polyglycol (PEG) forms net and knits structure and control SnO 2the microstructure of film.As for function of receptors, well-known carried metal and metal oxide can improve oxide semiconductor gas sensor to the sensitivity of gas and selectivity.Particularly Pd and PdO load on SnO 2research many especially, be mainly because they to SnO 2there is electricity and chemical sensitization.
SnO 2be a kind of common Semiconductor gas sensors material, a lot of gas is had to response, but air-sensitive performance be lower, and conventionally will just can reach optimum operating temperature above at 350 ℃, the response-recovery time is longer.Therefore prepare high air-sensitive property energy and the gas sensitive of short response-recovery time most important.
Summary of the invention
One's duty goal of the invention is to overcome existing SnO 2the defect of gas sensor, provides a kind of to CO and H 2response recovers fast, highly sensitive gas sensor material, and its preparation method and methods for using them is also provided in addition.
For achieving the above object, adopt technical scheme as follows:
A kind of palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO 2/ CNT), structure is the tin ash crystal (Pd/SnO doped with palladium 2) be coated on the surface of carbon nano-tube.
Press such scheme, described palladium doping stannic oxide enveloped carbon nanometer tube adopts following steps preparation:
Be dispersed in ultrapure water carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, then add chlorine palladium acid sodium solution to be uniformly mixed, regulate pH value to 7-9, preserve 0.2-36h for 30-200 ℃ and obtain milky gel, after washing, being dried, at 200-700 ℃ of calcining 1-36h, make palladium doping stannic oxide enveloped carbon nanometer tube.
Press such scheme, in described palladium doping stannic oxide enveloped carbon nanometer tube, the doping of palladium is at 1-20wt%.
Press such scheme, described carbon nano-tube is the carbon nano-tube through obtaining in 50-200 ℃ of condensing reflux 4-24h acidification.
The preparation method of palladium doping stannic oxide enveloped carbon nanometer tube, comprises the following steps:
Be dispersed in ultrapure water carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, then add chlorine palladium acid sodium solution to be uniformly mixed, regulate pH value to 7-9, preserve 0.2-36h for 30-200 ℃ and obtain milky gel, after washing, being dried, at 200-700 ℃ of calcining 1-36h, make palladium doping stannic oxide enveloped carbon nanometer tube.
Press such scheme, in the preparation method of described palladium doping stannic oxide enveloped carbon nanometer tube in palladium doping stannic oxide enveloped carbon nanometer tube the doping of palladium at 1-20wt%.
Press such scheme, in the preparation method of described palladium doping stannic oxide enveloped carbon nanometer tube, carbon nano-tube is the carbon nano-tube through obtaining in 50-200 ℃ of condensing reflux 4-24h acidification.
Described palladium doping stannic oxide enveloped carbon nanometer tube is as the application of gas sensitive.
Described palladium doping stannic oxide enveloped carbon nanometer tube is as the gas sensor of gas sensitive.
The invention provides a kind of based on palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO 2/ CNT) novel air-sensitive material gas sensor and preparation method, preparation method is simple for this gas sensor, easily realize, and due to the doping large increase of noble metal and carbon nano-tube tin dioxide gas sensor air-sensitive performance and reduce response and release time, and optimum operating temperature is moved to low temperature.CO is best, and sensing capabilities is greater than 50, and to the response of CO be 2s release time, optimum operating temperature is 150 ℃, to H 2best sensing capabilities is greater than 30, to H 2response and be respectively 3s and 5s release time, optimum operating temperature is 200 ℃.All be better than industrial gasses sensor properties.Be hopeful to be applied to CO and H 2in detection.
Beneficial effect of the present invention:
Highly sensitive, the sensitivity of business application reaches 4 and can apply;
Response recovery time is fast, and Japanese Figaro company's process gas sensor response time is all more than 10s, and this material can foreshorten to 2-5s;
Temperature is low, pure SnO 2optimum temperature is greater than 350 ℃, and the optimum temperature of this material is 150-200 ℃.
Accompanying drawing explanation
Fig. 1:: embodiment 1 preparation Pd/SnO 2the X diffractogram of/CNT;
Figure: 2: embodiment 1 preparation Pd/SnO 2the EDS figure of/CNT;
Fig. 3: embodiment 2 preparation Pd/SnO 2at 150 ℃ of/CNT gas sensitives to the sensitivity relation of variable concentrations CO and response-recovery figure;
Fig. 4: embodiment 2 preparation Pd/SnO 2at 200 ℃ of/CNT gas sensitives to variable concentrations H 2sensitivity relation and response-recovery figure.
Embodiment
Following examples are explaination technology contents of the present invention further, but not as the restriction to technical solution of the present invention.
Palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO 2/ CNT), structure is the tin ash crystal (Pd/SnO doped with palladium 2) be coated on the surface of carbon nano-tube.
Palladium doping stannic oxide enveloped carbon nanometer tube adopts sol-gal process preparation, and detailed process is as follows:
Be dispersed in ultrapure water carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, then add chlorine palladium acid sodium solution to be uniformly mixed, regulate pH value to 7-9, preserve 0.2-36h for 30-200 ℃, obtain milky colloidal sol, after washing, being dried, at 200-700 ℃ of calcining 1-36h, make palladium doping stannic oxide enveloped carbon nanometer tube.
When in palladium doping stannic oxide enveloped carbon nanometer tube, the doping of palladium is controlled at 0-20wt% scope as gas sensitive by massfraction calculating, effect is better.
Before preparation, carbon nano-tube has good effect through 50-200 ℃ of condensing reflux 4-24h acidification.
Palladium doping stannic oxide enveloped carbon nanometer tube is as the application of gas sensitive.When palladium doping stannic oxide enveloped carbon nanometer tube is found in experiment as the use of gas sensitive, carbon nano-tube can stop metal oxide to be reunited, and improves the sensitivity of gas sensor and shortens the response-recovery time, has unexpected good result.
Gas sensor based on palladium doping stannic oxide enveloped carbon nanometer tube as gas sensitive.The doping large increase of noble metal and carbon nano-tube the air-sensitive performance of tin dioxide gas sensor, CO is best, and sensing capabilities is greater than 50, to the response of CO be 2s release time, optimum operating temperature is 150 ℃, to H 2best sensing capabilities is greater than 30, to H 2response and be respectively 3s and 5s release time, optimum operating temperature is 200 ℃.All be better than industrial gasses sensor properties, be expected at CO and H 2in detection, use in a large number.
Embodiment 1
Be dispersed in 20min in ultrapure water by carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, after add wherein chlorine palladium acid sodium solution (mol ratio of Pd/Sn be 1%,), regulate pH value to 8, at 60-90 ℃ of lower magnetic force, stir 6h and obtain milky colloidal sol, washing, dry, at 200 ℃, calcine and be incubated 24h and can make palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO 2/ CNT).
Get a certain amount of Pd/SnO 2/ CNT is placed in agate mortar, add appropriate deionized water to grind to form all and fine and smooth slurry, then being coated in alchlor is slotting the finger on electrode of gold of substrate, the sensing layer of preparing gas sensor through applying is about 100um, after being painted with, dry in the shade, be then placed in air-sensitive tester, be assembled into a complete loops, form a complete gas sensing device, give the aging 24h of electric current.Test its air-sensitive performance and show that the sensitivity 150 ℃ time has reached 63 to the CO of 500ppm.
Shown in Fig. 1, the present embodiment gained Pd/SnO 2the X diffractogram of/CNT.SnO from figure 226.6 0, 33.9 0, 37.9 0, 51.8 0, 54.8 0, 57.8 0, 61.9 0, 64.7 0, 71.3 0with 78.7 0all there is diffraction peak in (JPCDS file No.41-1445), this belongs to tetragonal crystal system rutile SnO 2characteristic diffraction peak.But do not have the characteristic diffraction peak of Pd to occur, be mainly because the doping of Pd is less and Pd high degree of dispersion at SnO 2on surface.Shown in Fig. 2, Pd/SnO 2the EDS figure of/CNTs, due to the doping of Pd is less and high degree of dispersion at SnO 2surface, cannot detect the feature diffraction of Pd with XRD, but in the EDS figure from Fig. 2, can see the characteristic peak of Pd, shows that Pd has successfully been entrained in SnO 2surface.
Embodiment 2
Be dispersed in 20min in ultrapure water by carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, after add wherein chlorine palladium acid sodium solution (mol ratio of Pd/Sn be 3%,), regulate pH value to 8, at 60-90 ℃ of lower magnetic force, stir 6h and obtain milky colloidal sol, washing, dry, at 200 ℃, calcine and be incubated 24h and can make palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO 2/ CNT).
Get a certain amount of Pd/SnO 2/ CNT is placed in agate mortar, add appropriate deionized water to grind to form all and fine and smooth slurry, then being coated in alchlor is slotting the finger on electrode of gold of substrate, the sensing layer of preparing gas sensor through applying is about 100um, after being painted with, dries in the shade, and is then placed in air-sensitive tester, be assembled into a complete loops, form a complete gas sensing device, give the aging 24h of electric current, standby.
Performance test is with reference to Pd/SnO shown in Fig. 3 2at 150 ℃ of/CNT gas sensitives, to the sensitivity relation of variable concentrations CO and response-recovery figure, the sensitivity that can obtain CO becomes along with the increase of concentration greatly, Pd/SnO 2/ CNT gas sensitive is to foreshortening to 2s the release time of CO.With reference to Pd/SnO shown in Fig. 3 2at 200 ℃ of/CNT gas sensitives to variable concentrations H 2sensitivity relation and response-recovery figure, can obtain H 2sensitivity along with the increase of concentration, become greatly, Pd/SnO 2/ CNT gas sensitive is to H 2release time foreshorten to 5s.
Embodiment 3
Be dispersed in 20min in ultrapure water by carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, after add wherein chlorine palladium acid sodium solution (Pd account for Pd/SnO 2/ CNT massfraction is 1wt%), regulate pH value to 7, at 30 ℃ of magnetic agitation 36h, obtain milky colloidal sol, washing, dry, at 700 ℃, calcine and be incubated 1h and can make palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO 2/ CNT).
Embodiment 4
Be dispersed in 20min in ultrapure water by carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, after add wherein chlorine palladium acid sodium solution (Pd account for Pd/SnO 2/ CNT massfraction is 20wt%), regulate pH value to 9, at 200 ℃ of magnetic agitation 0.2h, obtain milky colloidal sol, washing, dry, at 200 ℃, calcine and be incubated 36h and can make palladium doping stannic oxide enveloped carbon nanometer tube (Pd/SnO 2/ CNT).

Claims (9)

1. a palladium doping stannic oxide enveloped carbon nanometer tube, is characterized in that form is doped with the tin ash crystal (Pd/SnO2) of palladium, to be coated on the surface of carbon nano-tube.
2. palladium doping stannic oxide enveloped carbon nanometer tube as claimed in claim 1, is characterized in that described palladium doping stannic oxide enveloped carbon nanometer tube is adopted with the following method to prepare:
Be dispersed in ultrapure water carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, then add chlorine palladium acid sodium solution to be uniformly mixed, regulate pH value to 7-9, preserve 0.2-36h for 30-200 ℃ and obtain milky gel, after washing, being dried, at 200-700 ℃ of calcining 1-36h, make palladium doping stannic oxide enveloped carbon nanometer tube.
3. palladium doping stannic oxide enveloped carbon nanometer tube as claimed in claim 1 or 2, is characterized in that the doping of palladium in described palladium doping stannic oxide enveloped carbon nanometer tube is at 1-20wt%.
4. palladium doping stannic oxide enveloped carbon nanometer tube as claimed in claim 1 or 2, is characterized in that described carbon nano-tube is the carbon nano-tube through obtaining in 50-200 ℃ of condensing reflux 4-24h acidification.
5. a preparation method for palladium doping stannic oxide enveloped carbon nanometer tube, is characterized in that comprising the following steps:
Be dispersed in ultrapure water carbon nano-tube is ultrasonic, add the ultrasonic dispersion again of stannic chloride pentahydrate presoma, then add chlorine palladium acid sodium solution to be uniformly mixed, regulate pH value to 7-9, preserve 0.2-36h for 30-200 ℃ and obtain milky gel, after washing, being dried, at 200-700 ℃ of calcining 1-36h, make palladium doping stannic oxide enveloped carbon nanometer tube.
6. the preparation method of palladium doping stannic oxide enveloped carbon nanometer tube as claimed in claim 5, is characterized in that in the preparation method of described palladium doping stannic oxide enveloped carbon nanometer tube in palladium doping stannic oxide enveloped carbon nanometer tube that the doping of palladium is at 1-20wt%.
7. the preparation method of palladium doping stannic oxide enveloped carbon nanometer tube as claimed in claim 5, is characterized in that carbon nano-tube in the preparation method of described palladium doping stannic oxide enveloped carbon nanometer tube is the carbon nano-tube through obtaining in 50-200 ℃ of condensing reflux 4-24h acidification.
Described in claim 1 or 2 palladium doping stannic oxide enveloped carbon nanometer tube as the application of gas sensitive.
Described in claim 1 or 2 palladium doping stannic oxide enveloped carbon nanometer tube as the gas sensor of gas sensitive.
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CN105338799A (en) * 2015-12-03 2016-02-17 安徽理工大学 Nanocomposite made of magnetic-metal-doped multiwalled carbon nanotubes/tin dioxide
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CN110395714A (en) * 2019-08-23 2019-11-01 南京智融纳米新材料科技有限公司 A kind of Sb doped SnO2The preparation method of@carbon nanotube complex electrocaloric film
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CN114622244A (en) * 2022-03-15 2022-06-14 南京师范大学 Ru-SnO2Hydrogen evolution reaction catalyst and preparation method thereof

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104386739A (en) * 2014-10-11 2015-03-04 武汉工程大学 Tubular-structure PdO/SnO2 nanometer composite gas-sensitive material and its preparation method and use
CN104483351A (en) * 2014-11-27 2015-04-01 武汉工程大学 Palladium-doped hollow porous stannic oxide microcubes as well as preparation method and application thereof
CN105259211A (en) * 2015-10-13 2016-01-20 武汉工程大学 Gas-sensor nanometer sensitive material, slurry with gas-sensor nanometer sensitive material, preparing method of gas-sensor nanometer sensitive material, preparing method of slurry and application of gas-sensor nanometer sensitive material
CN105338799A (en) * 2015-12-03 2016-02-17 安徽理工大学 Nanocomposite made of magnetic-metal-doped multiwalled carbon nanotubes/tin dioxide
CN105338799B (en) * 2015-12-03 2018-05-29 安徽理工大学 With the nanocomposite of magnetic metal doping multi-walled carbon nanotube/stannic oxide
CN109270127A (en) * 2018-09-27 2019-01-25 北京镭硼科技有限责任公司 A kind of planar semiconductor gas sensor chip and preparation method thereof
CN110395714A (en) * 2019-08-23 2019-11-01 南京智融纳米新材料科技有限公司 A kind of Sb doped SnO2The preparation method of@carbon nanotube complex electrocaloric film
CN110395714B (en) * 2019-08-23 2022-08-05 南京智融纳米新材料科技有限公司 Antimony doped SnO 2 Preparation method of @ carbon nanotube composite electrothermal film
CN112924498A (en) * 2021-01-22 2021-06-08 华中科技大学 Palladium monoatomic modified tin oxide composite material and preparation method and application thereof
CN112924498B (en) * 2021-01-22 2022-04-01 华中科技大学 Palladium monoatomic modified tin oxide composite material and preparation method and application thereof
CN114622244A (en) * 2022-03-15 2022-06-14 南京师范大学 Ru-SnO2Hydrogen evolution reaction catalyst and preparation method thereof

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