CN103703682A - 高频放大电路 - Google Patents
高频放大电路 Download PDFInfo
- Publication number
- CN103703682A CN103703682A CN201380002337.XA CN201380002337A CN103703682A CN 103703682 A CN103703682 A CN 103703682A CN 201380002337 A CN201380002337 A CN 201380002337A CN 103703682 A CN103703682 A CN 103703682A
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- circuit
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- constant circuit
- transistor
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012120094 | 2012-05-25 | ||
JP2012-120094 | 2012-05-25 | ||
PCT/JP2013/001754 WO2013175690A1 (ja) | 2012-05-25 | 2013-03-15 | 高周波増幅回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103703682A true CN103703682A (zh) | 2014-04-02 |
CN103703682B CN103703682B (zh) | 2017-02-22 |
Family
ID=49623406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380002337.XA Active CN103703682B (zh) | 2012-05-25 | 2013-03-15 | 高频放大电路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9203358B2 (zh) |
JP (1) | JP6074695B2 (zh) |
CN (1) | CN103703682B (zh) |
WO (1) | WO2013175690A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201323159D0 (en) * | 2013-12-31 | 2014-02-12 | Diamond Microwave Devices Ltd | Improved matching techniques for wide-bandgap power transistors |
JP6273247B2 (ja) | 2015-12-03 | 2018-01-31 | 株式会社東芝 | 高周波半導体増幅器 |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
DE102016111072A1 (de) * | 2016-06-16 | 2017-12-21 | Infineon Technologies Ag | Hochfrequenzeinrichtung |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
US11164828B2 (en) * | 2017-05-17 | 2021-11-02 | Mitsubishi Electric Corporation | Amplifier |
US11195807B2 (en) | 2017-09-28 | 2021-12-07 | Mitsubishi Electric Corporation | Semiconductor device, high-frequency power amplifier, and method of manufacturing semiconductor device |
US20220392857A1 (en) * | 2021-06-07 | 2022-12-08 | Cree Inc. | Packaged transistor amplifiers that include integrated passive device matching structures having distributed shunt inductances |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61237455A (ja) * | 1985-04-15 | 1986-10-22 | Sony Corp | モ−ルド電気部品 |
JPH0319403A (ja) * | 1989-06-15 | 1991-01-28 | Matsushita Electron Corp | マイクロ波集積回路素子 |
JPH08172306A (ja) * | 1994-12-19 | 1996-07-02 | Hitachi Ltd | 高周波装置及びこれを使用した移動無線器 |
JP2001111364A (ja) | 1999-10-12 | 2001-04-20 | Nec Corp | マイクロ波増幅器 |
JP3728393B2 (ja) * | 2000-02-16 | 2005-12-21 | 三菱電機株式会社 | 半導体装置 |
JP2002171144A (ja) * | 2000-12-05 | 2002-06-14 | Murata Mfg Co Ltd | 高周波増幅器 |
JP2003008357A (ja) * | 2001-06-20 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 電力増幅装置 |
JP2003115732A (ja) * | 2001-10-03 | 2003-04-18 | Hitachi Ltd | 半導体装置 |
JP2004228989A (ja) * | 2003-01-23 | 2004-08-12 | Renesas Technology Corp | 半導体装置 |
JP2006122095A (ja) | 2004-10-26 | 2006-05-18 | Chest M I Inc | 浴用カバーおよびこれを用いた介護用入浴装置 |
US7564303B2 (en) * | 2005-07-26 | 2009-07-21 | Infineon Technologies Ag | Semiconductor power device and RF signal amplifier |
WO2007119266A1 (ja) | 2006-03-22 | 2007-10-25 | Fujitsu Limited | 高周波高出力増幅器 |
JP4925096B2 (ja) | 2006-04-26 | 2012-04-25 | 三菱電機株式会社 | 高周波増幅器 |
US8299857B2 (en) * | 2011-01-27 | 2012-10-30 | Integra Technologies, Inc. | RF power amplifier including broadband input matching network |
-
2013
- 2013-03-15 US US14/233,242 patent/US9203358B2/en active Active
- 2013-03-15 JP JP2013549664A patent/JP6074695B2/ja active Active
- 2013-03-15 CN CN201380002337.XA patent/CN103703682B/zh active Active
- 2013-03-15 WO PCT/JP2013/001754 patent/WO2013175690A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2013175690A1 (ja) | 2013-11-28 |
US9203358B2 (en) | 2015-12-01 |
CN103703682B (zh) | 2017-02-22 |
JPWO2013175690A1 (ja) | 2016-01-12 |
US20140191809A1 (en) | 2014-07-10 |
JP6074695B2 (ja) | 2017-02-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160219 Address after: Osaka Japan Applicant after: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co.,Ltd. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200527 Address after: Kyoto Japan Patentee after: Panasonic semiconductor solutions Co.,Ltd. Address before: Osaka Japan Patentee before: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co.,Ltd. |