CN103684399A - Broadband and low-gain jittering buffer - Google Patents
Broadband and low-gain jittering buffer Download PDFInfo
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- CN103684399A CN103684399A CN201210337509.6A CN201210337509A CN103684399A CN 103684399 A CN103684399 A CN 103684399A CN 201210337509 A CN201210337509 A CN 201210337509A CN 103684399 A CN103684399 A CN 103684399A
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Abstract
The invention belongs to the technical field of integrated circuits, and relates to a broadband and low-gain jittering buffer. The buffer comprises two-stage circuits, wherein each stage circuit is fully differential circuit; the first-stage circuit provides a certain gain through a series inductance peaked circuit; the second-stage circuit performs gain compensation through a shunt inductance peaked circuit. The buffer realizes broadband driving through the inductance peaking, and low-gain jitter in the broadband through gain compensation. The experiment proved that the buffer circuit can avoid the defect that in the prior art, for example, in the full-band multi-band orthogonal frequency-division multiplexing ultra wide band application, the single-stage series inductance peaked circuit is hard to meet the requirements of system to the buffer, and has high broadband performance and low-gain jittering performance.
Description
Technical field
The invention belongs to technical field of integrated circuits, be specifically related to the buffer of a kind of broadband, low gain shake, can be applied to drive compared with the wide band radio-frequency integrated circuit of heavy load.
Background technology
Along with the progress of CMOS technique, process reduces, and integrated level increases, and the design of wide band radio-frequency integrated circuit and application are more and more extensive, such as multi-band orthogonal frequency division multiplexing ultra wide band technology (MB-OFDM UWB), multi-mode radio communication technology etc.Radio frequency integrated circuit develops to broadband gradually at present, in wide band radio-frequency integrated circuit, the broadband buffer of flat gain is important circuit module, for example, in multi-band orthogonal frequency division multiplexing ultra wide band radio-frequency transceiver system, fast frequency-hopped frequency synthesizer needs the broadband buffer of flat gain to drive transmitter and receiver.But wide band radio-frequency integrated circuit often need to drive load in very large frequency bandwidth, therefore need the broadband buffer circuits of flat gain.For many broadband applications, for example full frequency band multi-band orthogonal frequency division multiplexing ultra wide band (3.1GHz-10.6GHz) application, the series inductance of single-stage is built peak circuit and is difficult to meet the requirement of system to buffer, need to carry out gain compensation, to improve bandwidth of operation and gain flatness.
The present invention intends providing a kind of buffer that can realize broadband, low gain shake, thereby provides stronger driving force for wide band radio-frequency integrated circuit.
Summary of the invention
The object of the invention is to the deficiency existing for prior art, a kind of buffer that can realize broadband, low gain shake is provided, thereby provide stronger driving force for wide band radio-frequency integrated circuit.
The buffer of broadband of the present invention, low gain shake consists of two-stage circuit, and every grade of circuit is fully differential circuit.First order circuit is built peak circuit by series inductance certain gain is provided; The second level is built peak circuit by shunt inductance and is carried out gain compensation.By inductance, build peak, realize broadband and drive; By gain compensation, realize the low gain shake in broadband.
The buffer circuits of broadband of the present invention, low gain shake consists of two-stage circuit, and every grade of circuit is fully differential circuit.First order circuit is that series inductance is built peak circuit, and Main Function is to provide certain gain; The second level is that shunt inductance is built peak circuit, and Main Function is to carry out gain compensation.Buffer of the present invention is built peak by inductance, realizes broadband and drives; By gain compensation, realize the low gain shake in broadband.
In the present invention, every grade of circuit all adopts difference input, difference output.
In the present invention, first order circuit is that series inductance is built peak circuit, builds that peak inductance is inputted the drain terminal parasitic capacitance of N-type mos field effect transistor by the first order and the input capacitance of second level circuit is separated; First order circuit is used to provide certain gain.
In the present invention, second level circuit is that shunt inductance is built peak circuit, builds after peak inductance connects with load resistance, in parallel with load capacitance; Second level circuit is used for carrying out gain compensation.
Broadband and low gain shake in one embodiment of the present of invention, have been realized preferably: wherein, circuit structure as shown in Figure 1, is two-stage fully differential buffer circuits, and load capacitance CL is 300fF, first order circuit is that series inductance is built peak circuit, and Main Function is to provide certain gain; The second level is that shunt inductance is built peak circuit, and Main Function is to carry out gain compensation, and the amplitude-frequency response that emulation obtains as shown in Figure 6.First order circuit provides 8.7dB gain at low frequency place, in order to carry out gain compensation, second level circuit has the gain spike of 1.9dB at high frequency treatment, by this gain compensation, this buffer circuits can provide 9.1dB gain at direct current in 12.8GHz frequency range, be dithered as ± 0.35dB of gain, three dB bandwidth is 14.6GHz, the power consumption of whole buffer circuits is 17.1mW; Result demonstration, this buffer circuits has good broadband and low gain jitter performance.
Accompanying drawing explanation
The buffer circuits of Fig. 1 broadband of the present invention, low gain shake,
Wherein, " V
dD" expression supply voltage, " R
1" represent the load resistance of the first order, " L
1" represent the series peaking inductance of the first order, " R
2" represent the load resistance of the second level, " L
2" represent the shunt peaking inductance of the second level, " C
l" expression load capacitance, " V
in" expression input signal, " V
out" expression output signal.
Fig. 2 series inductance is built peak circuit.
Fig. 3 series inductance is built the amplitude-frequency response of peak circuit.
Fig. 4 shunt inductance is built peak circuit.
Fig. 5 shunt inductance is built the amplitude-frequency response of peak circuit.
The amplitude-frequency response of Fig. 6 broadband, low gain wobble buffer.
Embodiment
In conjunction with the buffer circuits of the broadband of the present invention shown in Fig. 1, low gain shake, this buffer consists of two-stage circuit, and every grade of circuit is fully differential circuit.First order circuit is that series inductance is built peak circuit, and Main Function is to provide certain gain; The second level is that shunt inductance is built peak circuit, and Main Function is to carry out gain compensation.The operation principle of broadband provided by the invention, low gain wobble buffer is as following:
The first order circuit of broadband first of the present invention, low gain wobble buffer, its Main Function is to provide certain gain, and for convenience of explanation, the present embodiment adopts single-end circuit to be described.Shown in Fig. 2, first order circuit is that series inductance is built peak circuit, wherein " C
1" represent the drain terminal parasitic capacitance of first order input N-type mos field effect transistor, " C
2" representing the load capacitance of first order circuit, a kind of visual interpretation that this circuit can be expanded bandwidth of operation is: build peak inductance by electric capacity " C
1" and " C
2" separate, initial time only need to be to electric capacity " C so
1" charge, thereby the rise time reduces, bandwidth of operation increases.
Shown in Fig. 3, as load capacitance C
2while getting different value, series inductance is built the peak circuit amplitude-frequency response of (as shown in Figure 2).Work as C
2during for 50fF, the bandwidth of response curve is very wide, but has the spike of 2.2dB, along with load capacitance C
2increase gradually, response curve significantly reduces in the gain at 10GHz place, high-frequency drive scarce capacity.
In view of at present for many broadband applications, for example full frequency band multi-band orthogonal frequency division multiplexing ultra wide band (3.1GHz-10.6GHz) application, the series inductance of single-stage is built peak circuit and is difficult to meet the requirement of system to buffer, need to carry out gain compensation, to improve bandwidth of operation and gain flatness.
The second level circuit of broadband of the present invention, low gain wobble buffer, its Main Function is to carry out gain compensation.The present embodiment adopts single-end circuit to be described, and as shown in Figure 4, second level circuit is that shunt inductance is built peak circuit, wherein " C
21" represent the drain terminal parasitic capacitance of second level input N-type mos field effect transistor, " C
22" representing the load capacitance of second level circuit, a kind of visual interpretation that this circuit can be expanded bandwidth of operation is: build peak inductance and impel electric current to electric capacity " C
21" and " C
22" charging, thereby the rise time reduces, bandwidth of operation increases.
As shown in Figure 5, be as load capacitance C
22while getting different value, shunt inductance is built the peak circuit amplitude-frequency response of (as shown in Figure 4), works as C
22during for 50fF, the bandwidth of response curve is very wide, but has the spike of 2.8dB, and for different circuit parameters, in response curve, the frequency at this spike place is different, gain is also different; The present invention, when two-stage buffer design, utilizes this gain spike to carry out high-frequency gain compensation, realizes broadband and low gain shake.
Broadband and low gain shake in the present embodiment, have been realized preferably: wherein, circuit structure as shown in Figure 1, is two-stage fully differential buffer circuits, load capacitance C
lfor 300fF, first order circuit is that series inductance is built peak circuit, and Main Function is to provide certain gain; The second level is that shunt inductance is built peak circuit, and Main Function is to carry out gain compensation, and the amplitude-frequency response that emulation obtains as shown in Figure 6.First order circuit provides 8.7dB gain at low frequency place, in order to carry out gain compensation, second level circuit has the gain spike of 1.9dB at high frequency treatment, by this gain compensation, this buffer circuits can provide 9.1dB gain at direct current in 12.8GHz frequency range, be dithered as ± 0.35dB of gain, three dB bandwidth is 14.6GHz, the power consumption of whole buffer circuits is 17.1mW; Result demonstration, this buffer circuits has good broadband and low gain jitter performance.
Claims (4)
1. a buffer for broadband, low gain shake, is characterized in that, two-stage circuit, consist of, every grade of circuit is fully differential circuit; Wherein, first order circuit is that series inductance is built peak circuit, and certain gain is provided; The second level is that shunt inductance is built peak circuit, carries out gain compensation.
2. the buffer of broadband according to claim 1, low gain shake, is characterized in that, every grade of described circuit all adopts difference input, difference output.
3. the buffer that broadband according to claim 1, low gain are shaken, it is characterized in that, described first order circuit series inductance is built in peak circuit, builds that peak inductance is inputted the drain terminal parasitic capacitance of N-type mos field effect transistor by the first order and the input capacitance of second level circuit is separated.
4. the buffer of broadband according to claim 1, low gain shake, is characterized in that, described second level circuit shunt inductance is built in peak circuit, after building peak inductance and connecting with load resistance, in parallel with load capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210337509.6A CN103684399A (en) | 2012-09-12 | 2012-09-12 | Broadband and low-gain jittering buffer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210337509.6A CN103684399A (en) | 2012-09-12 | 2012-09-12 | Broadband and low-gain jittering buffer |
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| Publication Number | Publication Date |
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| CN103684399A true CN103684399A (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210337509.6A Pending CN103684399A (en) | 2012-09-12 | 2012-09-12 | Broadband and low-gain jittering buffer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107534440A (en) * | 2015-04-02 | 2018-01-02 | 美高森美半导体无限责任公司 | Universal input buffer |
| CN107615650A (en) * | 2015-06-05 | 2018-01-19 | 德克萨斯仪器股份有限公司 | Driver with transformer feedback |
| CN114421908A (en) * | 2022-03-28 | 2022-04-29 | 成都英思嘉半导体技术有限公司 | Low-frequency compensation circuit, module, modulation driver and chip for optical communication |
Citations (5)
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| CN1832335A (en) * | 2006-04-13 | 2006-09-13 | 复旦大学 | CMOS superwide band low noise discharger |
| US20080054983A1 (en) * | 2004-10-29 | 2008-03-06 | John Leete | System and method for common mode bias for high frequency buffers |
| CN101350592A (en) * | 2008-07-11 | 2009-01-21 | 东南大学 | Ultra-wideband low noise amplifier |
| CN101807883A (en) * | 2010-04-08 | 2010-08-18 | 复旦大学 | Single-ended input and differential output low-noise amplifier applied in UWB system |
| CN101826854A (en) * | 2010-05-21 | 2010-09-08 | 凌阳科技股份有限公司 | Tracking wave filter and correction device thereof |
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2012
- 2012-09-12 CN CN201210337509.6A patent/CN103684399A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080054983A1 (en) * | 2004-10-29 | 2008-03-06 | John Leete | System and method for common mode bias for high frequency buffers |
| CN1832335A (en) * | 2006-04-13 | 2006-09-13 | 复旦大学 | CMOS superwide band low noise discharger |
| CN101350592A (en) * | 2008-07-11 | 2009-01-21 | 东南大学 | Ultra-wideband low noise amplifier |
| CN101807883A (en) * | 2010-04-08 | 2010-08-18 | 复旦大学 | Single-ended input and differential output low-noise amplifier applied in UWB system |
| CN101826854A (en) * | 2010-05-21 | 2010-09-08 | 凌阳科技股份有限公司 | Tracking wave filter and correction device thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107534440A (en) * | 2015-04-02 | 2018-01-02 | 美高森美半导体无限责任公司 | Universal input buffer |
| CN107534440B (en) * | 2015-04-02 | 2018-12-25 | 美高森美半导体无限责任公司 | universal input buffer |
| CN107615650A (en) * | 2015-06-05 | 2018-01-19 | 德克萨斯仪器股份有限公司 | Driver with transformer feedback |
| CN107615650B (en) * | 2015-06-05 | 2021-12-10 | 德克萨斯仪器股份有限公司 | Driver with transformer feedback |
| CN114421908A (en) * | 2022-03-28 | 2022-04-29 | 成都英思嘉半导体技术有限公司 | Low-frequency compensation circuit, module, modulation driver and chip for optical communication |
| CN114421908B (en) * | 2022-03-28 | 2022-06-24 | 成都英思嘉半导体技术有限公司 | Low-frequency compensation circuit, module, modulation driver and chip for optical communication |
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