CN103681958A - Texturization method for multi-crystalline silicon wafer - Google Patents
Texturization method for multi-crystalline silicon wafer Download PDFInfo
- Publication number
- CN103681958A CN103681958A CN201310482090.8A CN201310482090A CN103681958A CN 103681958 A CN103681958 A CN 103681958A CN 201310482090 A CN201310482090 A CN 201310482090A CN 103681958 A CN103681958 A CN 103681958A
- Authority
- CN
- China
- Prior art keywords
- etching method
- gas filtration
- wool
- making herbs
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 239000002253 acid Substances 0.000 claims abstract description 16
- 235000008216 herbs Nutrition 0.000 claims description 41
- 210000002268 wool Anatomy 0.000 claims description 41
- 238000001914 filtration Methods 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 5
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 5
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 5
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005642 Oleic acid Substances 0.000 claims description 5
- 235000021355 Stearic acid Nutrition 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 5
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 5
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 5
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000008117 stearic acid Substances 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 239000007822 coupling agent Substances 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 claims description 2
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 229920003180 amino resin Polymers 0.000 claims description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 claims description 2
- FATBGEAMYMYZAF-UHFFFAOYSA-N oleicacidamide-heptaglycolether Natural products CCCCCCCCC=CCCCCCCCC(N)=O FATBGEAMYMYZAF-UHFFFAOYSA-N 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- -1 polypropylene Polymers 0.000 claims description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 1
- 239000004743 Polypropylene Substances 0.000 claims 1
- 229920001155 polypropylene Polymers 0.000 claims 1
- 239000004634 thermosetting polymer Substances 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000000985 reflectance spectrum Methods 0.000 description 6
- 229920000058 polyacrylate Polymers 0.000 description 3
- 240000007762 Ficus drupacea Species 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005010 epoxy-amino resin Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a texturization method for a multi-crystalline silicon wafer. The surface of the multi-crystalline silicon wafer is coated with a gas filter sieve layer, and then texturization is implemented via an acid solution. According to the invention, the texturization method is novel, an elongated wormhole-type texture structure is formed, the texture surface is lower in reflectivity and is uniform, and the efficiency of cells is further improved.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon texturing method.
Background technology
In polycrystalline silicon solar cell manufacture process, silicon chip surface making herbs into wool is the key link.The effect of making herbs into wool has directly affected the conversion efficiency of final cell piece.Because the crystal grain of polysilicon chip by different crystal orientations forms, multiplex acid solution carrys out making herbs into wool, but matte size is large and uniformity is not good, and different intergranule aberration are obvious, and surface reflectivity is higher, and making herbs into wool stability is bad.In addition, easily there is black line in surface, causes battery surface aberration ratio to increase, and battery dark current increases.
New Polycrystalline silicon wafer fine hair making method provided by the present invention, can make the method for polycrystalline silicon texturing break through existing thinking, forms elongated worm hole type suede structure, has lower reflectivity and uniform matte, and then further promotes the efficiency of cell piece.
Summary of the invention
The method that the invention provides the making herbs into wool of a kind of New Polycrystalline silicon chip, is characterized in that: at polysilicon chip surface-coated one deck gas filtration sieve layer, then carry out acid solution making herbs into wool.Adopt etching method of the present invention can form the matte of elongated worm hole type structure, there is lower reflectivity and uniform matte.
Present inventor finds through long-time research, in making herbs into wool process, special size and surface tension due to gas filtration sieve, make silicon chip react the gas producing with Woolen-making liquid was just rejected to outside sieves before reaching certain size, can effectively avoid gathering formation air pocket at silicon chip surface, thereby control size and the pattern in worm hole in suede structure.This suede structure has reduced the surface reflectivity of sunlight, further improves the efficiency of cell piece.
The gas filtration sieve layer that the present invention uses is prepared as follows: the preparation of (1) gas filtration sieve material liquid: thermosetting resin is dissolved in solvent, then add coupling agent, add a kind of in oleic acid, oleamide, stearic acid, dioctyl phthalate, be cooled to subsequently room temperature, form gas filtration sieve material liquid; (2) coating gas sieves: gas filtration is sieved to material liquid and be coated on how prosperous silicon chip; (3) solid gas sieves: the gas filtration sieve material liquid being coated on polysilicon chip is solidified.Be 10 seconds curing time--30 minutes, curing temperature was: and 20-100 ℃, be preferably heated to the temperature-curable 15-300 second of 50-300 ℃, can or be heating and curing by illumination curing.
Described coupling agent is silane coupler, preferred silane coupling agent KH-560 and Silane coupling reagent KH-570.
Gas filtration sieve thickness of the present invention is: 0.5-30 μ m.
Thermosetting resin of the present invention is selected from one or more in acrylic resin, phenolic resins, epoxy resin, amino resins or other resins, preferred acrylic resins and epoxy resin, most preferred acrylic resin.
The invention provides the compound method for the novel etching method acid solution of polysilicon chip, comprise the hydrofluoric acid of the nitric acid of 3060 weight portions and 7-20 weight portion soluble in waterly, obtain the acid solution of 100 weight portions.Preferably use the nitric acid of 40-50 weight portion and the hydrofluoric acid of 10-15 weight portion soluble in water, obtain the acid solution of 100 weight portions.
The mass concentration of described nitric acid is 40-75%, and the mass concentration of described hydrofluoric acid is 40-60%, and the mass concentration of preferred described nitric acid is 69%, and the mass concentration of described hydrofluoric acid is 49%.
Optionally in acid solution, add making herbs into wool additive, making herbs into wool additive package containing triethanolamine, polyvinylpyrrolidone and water, for example, is used the polycrystalline silicon solar cell making herbs into wool supplement (name of product: polycrystalline silicon solar cell making herbs into wool supplement TP2 series) of Changzhou Shi Chuan Energy Science Co., Ltd.
Polycrystalline silicon texturing method making herbs into wool temperature of the present invention is 8-25 ℃, and the time is 50-200s.
The invention has the advantages that: adopt etching method of the present invention, can obtain the matte of elongated worm hole type structure, keep antiradar reflectivity and even matte simultaneously, and then improve the photoelectric conversion efficiency of cell piece.In addition, the present invention has nontoxicity, non-corrosiveness, nonirritant, to human body and environment without harm, and preparation and operation simple, equipment is cheap, reproducible.
Accompanying drawing explanation
Fig. 1 is the stereoscan photograph of the silicon chip surface making herbs into wool face that obtains of embodiment 1.
Fig. 2 is the reflectance spectrum of the silicon chip surface making herbs into wool face that obtains of embodiment 1.
Fig. 3 is the stereoscan photograph of the silicon chip surface making herbs into wool face that obtains of embodiment 2.
Fig. 4 is the reflectance spectrum of the silicon chip surface making herbs into wool face that obtains of embodiment 2.
Fig. 5 is the stereoscan photograph of the silicon chip surface making herbs into wool face that obtains of embodiment 3.
Fig. 6 is the reflectance spectrum of the silicon chip surface making herbs into wool face that obtains of embodiment 3.
Embodiment
The part material using in following examples is as follows:
Water-soluble polyacrylate: polypentaerythritol tetraacrylate
Soluble polyurethane: IPDI polyurethane
Silane coupler KH-560:3-(2,3-epoxy the third oxygen) propyl trimethoxy silicane
Silane coupling reagent KH-570: γ-(methacryloxypropyl) propyl trimethoxy silicane
Stearic acid: primes stearic acid
Oleic acid: primes oleic acid
Embodiment 1
Take following processing step: 1) preparation gas filtration sieve: 5g water-soluble polyacrylate and 3g soluble polyurethane are dissolved in 100ml ethanol under 70 ℃ of conditions, under 70 ℃ of conditions, add afterwards the silane coupler KH-560 of 0.5ml and the stearic acid of 1ml, form gas filtration sieve liquid, and be cooled to room temperature; 2) preparating acid solution: 500ml nitric acid (concentration is 69%) and 100ml hydrofluoric acid (concentration is 49%) are dissolved in deionized water, are made into the acid solution of 1L; 3) coating gas sieves: gas filtration is sieved to liquid and apply on polysilicon chip by spin-coating method, speed is first 300 turn/min at a slow speed, quicker 2500 turn/min, and the corresponding time is respectively 5s and 30s; 4) solid gas sieves: solidify by curing oven method, curing temperature is 80 ℃, and the time is 5min; 5) making herbs into wool: the polysilicon chip that is coated with sieves is positioned over to making herbs into wool in acid solution, and making herbs into wool temperature is 50 ℃, and the time is 50s;
Fig. 1 has provided according to the stereoscan photograph of silicon chip surface making herbs into wool face after embodiment 1 making herbs into wool, and silicon chip surface has formed novel elongated worm matte as we can see from the figure, and length is about 15-30 μ m, and width is about 2-3 μ m.Fig. 2 has provided according to the reflectance spectrum of silicon chip surface making herbs into wool face after making herbs into wool after embodiment 1 making herbs into wool, and as we can see from the figure, the reflectivity of the silicon chip surface making herbs into wool face that the present invention obtains is lower, and the integrated reflectivity in 300-1100nm wave-length coverage is lower than 16%.
Embodiment 2
Take following processing step: 1) preparation gas filtration sieve: 8g water-soluble polyacrylate is dissolved in 100ml acetone under the condition of 75 ℃, under the condition of 70 ℃, add afterwards the Silane coupling reagent KH-570 of 0.8ml and the oleic acid of 1ml, form gas filtration sieve liquid, and be cooled to room temperature; 2) preparating acid solution: 450ml nitric acid, 150ml hydrofluoric acid and 5ml making herbs into wool additive are mixed, be made into altogether the acid solution of 1L; 3) apply sieves: sieves liquid is applied on polysilicon chip by czochralski method, and pull rate is 1mm/mm, and the time is 50min; 4) solidify sieves: by ultraviolet method, solidify, the power of uviol lamp is 200w, and the time is 300s; 5) making herbs into wool: the polysilicon chip that is coated with sieves is positioned over to making herbs into wool in acid solution, and making herbs into wool temperature is 20 ℃, in time, asks as 70s;
Fig. 3 has provided according to the stereoscan photograph of silicon chip surface making herbs into wool face after embodiment 2 making herbs into wool, and silicon chip surface has formed novel elongated worm matte as we can see from the figure, and length is about 12-26 μ m, and width is about 2-4 μ m.Fig. 4 has provided according to the reflectance spectrum of silicon chip surface making herbs into wool face after making herbs into wool after embodiment 2 making herbs into wool, and as we can see from the figure, the reflectivity of the silicon chip surface making herbs into wool face that the present invention obtains is lower, and the integrated reflectivity in 300-1100nm wave-length coverage is lower than 17.5%.
Embodiment 3:
Except not using, gas filtration is sieved, other condition is identical with embodiment 1, repeats embodiment 1, and polysilicon chip is carried out to making herbs into wool, and gained stereoscan photograph and reflectance spectrum are as shown in Figure 5 and Figure 6.Shown in Fig. 5 and Fig. 6, do not use gas filtration sieve to there is following shortcoming: form the matte of fat worm hole type structure, reflectivity is higher and matte is inhomogeneous.
Claims (12)
1. a polycrystalline silicon texturing method, is characterized in that: at polysilicon chip surface-coated one deck gas filtration sieve layer, then carry out acid solution making herbs into wool.
2. etching method according to claim 1, is characterized in that: described gas filtration sieve layer is thermoset resin layer.
3. according to the etching method described in any one in claim 1-2, it is characterized in that: described gas filtration sieve layer thickness is: 0.5-30 μ m.
4. according to the etching method described in any one in claim 1-3, it is characterized in that described gas filtration sieve layer is prepared as follows: the preparation of (1) gas filtration sieve material liquid: thermosetting resin is dissolved in solvent, add coupling agent, then add one or more in oleic acid, oleamide, stearic acid, dioctyl phthalate, be cooled to subsequently room temperature, form gas filtration sieve material liquid, described coupling agent is silane coupler, preferred silane coupling agent KH-560 and Silane coupling reagent KH-570; (2) coating gas sieves: gas filtration is sieved to material liquid and be coated on polysilicon chip; (3) solid gas sieves: be cured by illumination curing or the mode that is heating and curing being coated in gas filtration on polysilicon chip sieve material liquid.
5. according to the etching method described in any one in claim 4, it is characterized in that be 10 seconds-30 minutes curing time, curing temperature is: 20-100 ℃, is preferably heated to the temperature-curable 15-300 second of 50-300 ℃.
6. according to the etching method described in claim 2 or 4, it is characterized in that thermosetting resin is selected from one or more in acrylic resin, phenolic resins, epoxy resin, amino resins.
7. according to the etching method described in claim 2 or 4, it is characterized in that thermosetting resin is used water-soluble polypropylene acid fat and/or soluble polyurethane.
8. according to the etching method described in claim 2 or 4, it is characterized in that thermosetting resin is used epoxy resin.
9. etching method according to claim 4, is characterized in that the component that acid solution comprises is: nitric acid, hydrofluoric acid, and optional making herbs into wool additive, and the water of surplus, wherein water is preferably deionized water.
10. etching method according to claim 9, is characterized in that comprising in making herbs into wool additive triethanolamine, polyvinylpyrrolidone and water.
11. etching methods according to claim 4, is characterized in that solvent is selected from ethanol, acetone, cyclohexanone, dimethyl formamide, ether, ethyl acetate, dimethylbenzene, toluene and benzinum one or more.
12. etching methods according to claim 4, is characterized in that solvent is selected from ethanol and acetone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310482090.8A CN103681958B (en) | 2013-10-16 | 2013-10-16 | Texturization method for multi-crystalline silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310482090.8A CN103681958B (en) | 2013-10-16 | 2013-10-16 | Texturization method for multi-crystalline silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103681958A true CN103681958A (en) | 2014-03-26 |
| CN103681958B CN103681958B (en) | 2017-05-17 |
Family
ID=50318867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310482090.8A Active CN103681958B (en) | 2013-10-16 | 2013-10-16 | Texturization method for multi-crystalline silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103681958B (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104060325A (en) * | 2014-06-20 | 2014-09-24 | 润峰电力有限公司 | Polycrystalline silicon texturing solution and texturing method thereof |
| CN105040108A (en) * | 2015-08-21 | 2015-11-11 | 浙江启鑫新能源科技股份有限公司 | Texture surface making method for polycrystalline silicon solar battery |
| CN105957907A (en) * | 2016-07-08 | 2016-09-21 | 合肥中南光电有限公司 | High-uniformity paeonol-containing single crystalline silicon solar cell surface texture liquid and preparation method thereof |
| CN105977344A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Monocrystalline silicon solar battery cell surface texture liquid having low reflectivity and zeolite powder and preparation method thereof |
| CN105977345A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Rare earth-itaconic acid monocrystalline silicon solar cell surface texture liquid and preparation method thereof |
| CN105977343A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Monocrystalline silicon solar cell surface texture liquid having high stability and tannin extract and preparation method thereof |
| CN106024988A (en) * | 2016-07-26 | 2016-10-12 | 南京科乃迪科环保科技有限公司 | One-step wet black silicon preparation and surface treatment method |
| CN106012029A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell piece surface texture solution containing pomegranate bark extract and preparation method thereof |
| CN106012031A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell surface texture solution containing notoginsenoside and preparation method thereof |
| CN106012028A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell piece surface texture solution containing peach gum and preparation method thereof |
| CN106012030A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell piece surface texture solution containing cinnamomum camphora leaf extract and preparation method thereof |
| CN106087069A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of behenyl alcohol sodium lignin sulfonate monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
| CN106087068A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
| CN106087067A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of sugar calcium Bamboo vinegar solution monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
| CN106129139A (en) * | 2016-07-08 | 2016-11-16 | 合肥中南光电有限公司 | A kind of monocrystaline silicon solar cell sheet surface texture liquid containing soybean oligo saccharide and preparation method thereof |
| CN106129140A (en) * | 2016-07-08 | 2016-11-16 | 合肥中南光电有限公司 | A kind of environment-friendly high-efficiency monocrystaline silicon solar cell sheet surface texture liquid containing micropore starch and preparation method thereof |
| CN106119974A (en) * | 2016-07-07 | 2016-11-16 | 合肥中南光电有限公司 | A kind of monocrystaline silicon solar cell sheet surface texture liquid containing extract from pine needles and preparation method thereof |
| CN106119975A (en) * | 2016-07-08 | 2016-11-16 | 合肥中南光电有限公司 | A kind of monocrystaline silicon solar cell sheet surface texture liquid containing hydrolytic collagen and preparation method thereof |
| WO2019042084A1 (en) * | 2017-09-04 | 2019-03-07 | 苏州易益新能源科技有限公司 | Method for selective texture preparation on surface of crystalline silicon wafer |
| WO2022262340A1 (en) * | 2021-06-18 | 2022-12-22 | 常州时创能源股份有限公司 | Alkali corrosion adjuvant for cleaning winding-plated polysilicon and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794843A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for lowering reflectivity of multi-crystalline texturing |
| CN102148292A (en) * | 2011-03-22 | 2011-08-10 | 上海采日光伏技术有限公司 | Preparation method for texture of solar cell |
| US20130171765A1 (en) * | 2010-09-01 | 2013-07-04 | Basf Se | Aqueous acidic solution and etching solution and method for texturizing the surface of single crystal and polycrystal silicon substrates |
-
2013
- 2013-10-16 CN CN201310482090.8A patent/CN103681958B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794843A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for lowering reflectivity of multi-crystalline texturing |
| US20130171765A1 (en) * | 2010-09-01 | 2013-07-04 | Basf Se | Aqueous acidic solution and etching solution and method for texturizing the surface of single crystal and polycrystal silicon substrates |
| CN102148292A (en) * | 2011-03-22 | 2011-08-10 | 上海采日光伏技术有限公司 | Preparation method for texture of solar cell |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104060325A (en) * | 2014-06-20 | 2014-09-24 | 润峰电力有限公司 | Polycrystalline silicon texturing solution and texturing method thereof |
| CN105040108A (en) * | 2015-08-21 | 2015-11-11 | 浙江启鑫新能源科技股份有限公司 | Texture surface making method for polycrystalline silicon solar battery |
| CN105040108B (en) * | 2015-08-21 | 2017-11-17 | 浙江启鑫新能源科技股份有限公司 | The etching method of polysilicon solar cell |
| CN106119974A (en) * | 2016-07-07 | 2016-11-16 | 合肥中南光电有限公司 | A kind of monocrystaline silicon solar cell sheet surface texture liquid containing extract from pine needles and preparation method thereof |
| CN106012030A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell piece surface texture solution containing cinnamomum camphora leaf extract and preparation method thereof |
| CN106087067A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of sugar calcium Bamboo vinegar solution monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
| CN105957907A (en) * | 2016-07-08 | 2016-09-21 | 合肥中南光电有限公司 | High-uniformity paeonol-containing single crystalline silicon solar cell surface texture liquid and preparation method thereof |
| CN106012029A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell piece surface texture solution containing pomegranate bark extract and preparation method thereof |
| CN106012031A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell surface texture solution containing notoginsenoside and preparation method thereof |
| CN106012028A (en) * | 2016-07-08 | 2016-10-12 | 合肥中南光电有限公司 | Single crystalline silicon solar cell piece surface texture solution containing peach gum and preparation method thereof |
| CN105977345A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Rare earth-itaconic acid monocrystalline silicon solar cell surface texture liquid and preparation method thereof |
| CN106087069A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of behenyl alcohol sodium lignin sulfonate monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
| CN106087068A (en) * | 2016-07-08 | 2016-11-09 | 合肥中南光电有限公司 | A kind of amino of chitosan sulfonic acid monocrystaline silicon solar cell sheet surface texture liquid and preparation method thereof |
| CN105977343A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Monocrystalline silicon solar cell surface texture liquid having high stability and tannin extract and preparation method thereof |
| CN106129139A (en) * | 2016-07-08 | 2016-11-16 | 合肥中南光电有限公司 | A kind of monocrystaline silicon solar cell sheet surface texture liquid containing soybean oligo saccharide and preparation method thereof |
| CN106129140A (en) * | 2016-07-08 | 2016-11-16 | 合肥中南光电有限公司 | A kind of environment-friendly high-efficiency monocrystaline silicon solar cell sheet surface texture liquid containing micropore starch and preparation method thereof |
| CN105977344A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Monocrystalline silicon solar battery cell surface texture liquid having low reflectivity and zeolite powder and preparation method thereof |
| CN106119975A (en) * | 2016-07-08 | 2016-11-16 | 合肥中南光电有限公司 | A kind of monocrystaline silicon solar cell sheet surface texture liquid containing hydrolytic collagen and preparation method thereof |
| CN106024988A (en) * | 2016-07-26 | 2016-10-12 | 南京科乃迪科环保科技有限公司 | One-step wet black silicon preparation and surface treatment method |
| WO2019042084A1 (en) * | 2017-09-04 | 2019-03-07 | 苏州易益新能源科技有限公司 | Method for selective texture preparation on surface of crystalline silicon wafer |
| WO2022262340A1 (en) * | 2021-06-18 | 2022-12-22 | 常州时创能源股份有限公司 | Alkali corrosion adjuvant for cleaning winding-plated polysilicon and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103681958B (en) | 2017-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103681958A (en) | Texturization method for multi-crystalline silicon wafer | |
| Guo et al. | The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films | |
| CN101916787B (en) | Black silicon solar cell and preparation method thereof | |
| Chen et al. | Highly efficient and stable luminescence from microbeans integrated with Cd‐free quantum dots for white‐light‐emitting diodes | |
| Xia et al. | CuO nanoleaves enhance the c-Si solar cell efficiency | |
| CN103606596A (en) | Phosphorus doping silicon wafer, manufacturing method of phosphorus doping silicon wafer, solar cell and manufacturing method of solar cell | |
| CN109524553B (en) | Liquid film quick-drying creep-inhibiting in-situ crystallization preparation method of suede uniform perovskite film | |
| Baek et al. | The energy-down-shift effect of Cd 0.5 Zn 0.5 S–ZnS core–shell quantum dots on power-conversion-efficiency enhancement in silicon solar cells | |
| CN102157617B (en) | Preparation method of silicon-based nano-wire solar cell | |
| JP6203986B2 (en) | Solar cell element and manufacturing method thereof | |
| CN109545975B (en) | Liquid film creeping-inhibiting in-situ freezing sublimation crystallization preparation method of suede uniform perovskite film | |
| CN102683483B (en) | A kind of crystal silicon solar batteries goes dead layer method | |
| CN102867738B (en) | A kind of crystal-silicon solar cell prepares the method for PN junction | |
| CN102101653B (en) | Cu2ZnSnSe4 nano material as well as preparation method and application of thereof | |
| JP5733655B2 (en) | Silicon nanoparticle / silicon nanowire composite material, solar cell, light emitting device, and manufacturing method | |
| CN102088046A (en) | Technology for manufacturing selective emitter electrode of crystalline silicon solar cell through single-step diffusion | |
| CN104362209A (en) | Crystalline silicon solar cell subjected to back polishing and preparation technology thereof | |
| CN109560198B (en) | Liquid film cold air creeping-inhibiting in-situ quick-drying crystallization preparation method of suede uniform perovskite film | |
| CN104485386A (en) | Texturization method for polycrystalline silicon solar battery | |
| CN204741023U (en) | Novel flexible solar panel | |
| CN104465814B (en) | It is a kind of to combine nano structure of zinc oxide extra small suede solar cell and preparation method thereof | |
| CN104692339A (en) | Cu3SbSe3 nanometer material and preparation method of Cu3SbSe3 nanometer material | |
| CN109545974B (en) | High-viscosity liquid film creeping-inhibiting in-situ crystallization preparation method of suede uniform perovskite film | |
| CN107240623B (en) | Surface phasmon and interface cooperate with the preparation method of enhanced monocrystalline silicon battery | |
| CN101311386B (en) | Method for preparing single crystal zinc blende nano-wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee after: Changzhou Shichuang Energy Co., Ltd Address before: 213300 Liyang province Jiangsu City Licheng town Wuhu Road No. 168 Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |