CN103677055A - Band gap reference circuit and double-output self-reference voltage stabilizer thereof - Google Patents

Abstract

The invention discloses a band gap reference circuit. The band gap reference circuit comprises a double-output self-reference voltage stabilizer and a reference generating circuit. The double-output self-reference voltage stabilizer comprises a self-bias transconductance operation amplifier and a feedback voltage amplifier, wherein the self-bias transconductance operation amplifier is used for generating a first positive temperature coefficient current through the area difference of bipolar junction transistors of an input pair to bias the input pair and generating a positive temperature coefficient control voltage and a negative temperature coefficient control voltage; the feedback voltage amplifier is used for amplifying the negative temperature coefficient control voltage and outputting a reference voltage to feed back to the input pair for generating a first negative temperature coefficient current. The band gap reference circuit is used for generating a total voltage and a total current according to the positive temperature coefficient control voltage and the negative temperature coefficient control voltage.

Description

Band gap reference circuit and dual output oneself parameter voltage stabilizator thereof

Technical field

The present invention relates to a kind of band gap reference circuit and dual output oneself parameter voltage stabilizator thereof, espespecially a kind of band gap reference circuit and dual output oneself parameter voltage stabilizator thereof with low system voltage and low layout area.

Background technology

, there is the application of a large amount of hand-held devices in the development of digital product now.This series products can be used lower system voltage for reducing power consumption, circuit under this application if desired produces not with the reference voltage of temperature change, needs to use the band gap reference circuit (Bandgap Reference Circuit) that goes for low system voltage operation and low reference voltage is provided simultaneously.

For instance, please refer to Fig. 1, Fig. 1 is the schematic diagram of a band gap reference circuit 10 in known technology.As shown in Figure 1, in band gap reference circuit 10, by a transduction operational amplifier 100(operational transconductance amplifier, OTA) negative feedback forms imaginary short (virtual short) at the positive-negative input end of transduction operational amplifier 100, the positive-negative input end input voltage V of the operational amplifier 100 that can make to transduce _iN+with V _iN-equate (V _iN+=V _iN-=V _bE2), recycling has the poor difference V of base emitter voltage that the bipolarity junction transistor Q2 of particular area ratio 1:K and the area difference of Q1 cause _bE2-V _bE1and the resistance resistance R that is R (cross-pressure that is resistance R is V _bE2-V _bE1), can produce a positive temperature coefficient (PTC) electric current I _d, as the formula (1):

$I_D=\frac{V_{\mathrm{BE}2}-V_{\mathrm{BE}1}}{R}=\frac{V_T\·\ln \left(K\right)}{R}---\left(1\right)$

A limit voltage V due to bipolarity junction transistor Q1 and Q2 _tpositive temperature coefficient (PTC), therefore by the contained positive temperature coefficient (PTC) electric current I of the known resistance R of formula (1) _dpossesses positive temperature coefficient (PTC).

On the other hand, due to positive input terminal input voltage V _iN+equal the poor V of base emitter voltage _bE2, therefore utilize the resistance R that resistance is L*R _l, can produce a negative temperature parameter current I _d＇, as the formula (2):

${I_D}^{\′}=\frac{V_{\mathrm{BE}2}}{L*R}---\left(2\right)$

Wherein, due to V _bE2there is negative temperature coefficient, so resistance R _lcontained negative temperature parameter current I _d＇ possesses negative temperature coefficient.Thus, through suitable adjusting resistance R _lresistance L*R(be resistance R _land the ratio of resistance between resistance R), can utilize and add up positive temperature coefficient (PTC) electric current I _dwith negative temperature parameter current I _d＇ produces a zero-temperature coefficient electrical current I _rEF, shown in (3):

$I_{\mathrm{REF}}=\frac{V_T\ln K}{R}+\frac{V_{\mathrm{BE}2}}{L*R}$

$\frac{{\∂I}_{\mathrm{REF}}}{\∂T}=\frac{\ln K}{R}*\frac{{\∂V}_T}{\∂T}+\frac{1}{L*R}*\frac{{\∂V}_{\mathrm{BE}2}}{\∂T}=0$ (3)

$\⇒L=-\frac{\frac{{\∂V}_{\mathrm{BE}2}}{\∂T}}{\frac{{\∂V}_T}{\∂T}\ln K}\≈-\frac{-1.6}{0.085\ln K}$

Wherein, the poor V of base emitter voltage _bE2with limit voltage V _tafter time partial differential, be respectively negative temperature coefficient-1.6mv/C and positive temperature coefficient (PTC) 0.085mv/C.Therefore, from formula (3), as resistance R, R _lbetween during the ratio L=1.6/0.085lnK of resistance, zero-temperature coefficient electrical current I _rEFpossess zero-temperature coefficient, recycling current mirror is by this zero-temperature coefficient electrical current I _rEFcopy and export a resistance R to _rEFafter, can obtain a zero-temperature coefficient voltage V _rEF.Wherein, zero-temperature coefficient voltage V _rEFbe not limited to resistance R, R _lresistance, and can be by resistance R _rEFresistance adjust 0V ~ (VDD-V _dSvoltage between)=0V ~ (VDD-0.2V).

Yet under this framework, for enabling bandgap reference circuit 10 normal runnings, the condition that a system voltage VDD need be satisfied is $\mathrm{VDD}\≥V_{\mathrm{GS}}+2\·V_{\mathrm{DS}}\widetilde{=}0.8V+2\·0.2V=1.2V$ One path P 1 of system voltage VDD to ground connection (by), though therefore band gap reference circuit 10, applicable to the demand of part low-voltage energy band gap reference circuit, still cannot meet the application that system voltage VDD is 1V (as the above-mentioned application of using the hand-held device of lower system voltage for reducing power consumption).

In addition, though transduction operational amplifier 100 can lock input voltage V under the condition of low system voltage _iN+with V _iN-but compared to need not be at the general band gap reference circuit of low voltage operating, transduction operational amplifier 100 has increased circuit complexity, layout area and circuit power consumption, and can to do not mate (mismatch) because of processing procedure, not improve input voltage V because of the input of transduction operational amplifier 100 _iN+with V _iN-between error, and then affect zero-temperature coefficient electrical current I _rEFand zero-temperature coefficient voltage V _rEFtemperature coefficient, make it not exclusively there is zero-temperature coefficient.

In addition, compared to need not be at the general band gap reference circuit of low voltage operating, this framework need be used an extra resistance R _l' with equiulbrium flow through resistance R _lelectric current, except meeting increases extra layout area and circuit power consumption, work as resistance R _l, R _l' between do not mate time (because of resistance R _l, R _l' between the ratio L of resistance do not meet the condition of formula (3) completely), also can affect zero-temperature coefficient electrical current I _rEFand zero-temperature coefficient voltage V _rEFtemperature coefficient, make it not exclusively there is zero-temperature coefficient.

On the other hand, please refer to Fig. 2, Fig. 2 is the schematic diagram of a band gap reference circuit 20 in known technology.As shown in Figure 2, band gap reference circuit 20 is similar to band gap reference circuit 10 parts, therefore intimate assembly represents with same-sign with signal, and the main difference of band gap reference circuit 20 and band gap reference circuit 10 is, band gap reference circuit 20 is respectively with two sections of resistance R ₁, R ₂and two sections of resistance R ₁＇, R ₂＇ replaces resistance R _l, R _l' (its resistance R ₁, R ₂and resistance R ₁＇, R ₂it is also L*R that the resistance of ＇ is closed), and the positive-negative input end of a transduction operational amplifier 200 is coupled to respectively resistance R ₁, R ₂intersection and resistance R ₁＇, R ₂＇ intersection, and transduction operational amplifier 200 is with P type gold oxygen half (Metal oxide semiconductor, MOS) transistor is inputted the N-type MOS (metal-oxide-semiconductor) transistor that right structure replaces the operational amplifier 100 of originally transduceing and is inputted right structure, to adapt to the input voltage V after adjustment _iN+with V _iN-.

In this case, due to resistance R ₁, R ₂intersection and resistance R ₁＇, T ₂the resistance of ＇ intersection is because imaginary short is equal and resistance R ₁, R ₂resistance equal respectively resistance R ₁＇, R ₂the resistance of ＇, therefore still can be locked in the voltage of current mirror below the poor V of base emitter voltage of bipolarity junction transistor Q1 _bE1, and can obtain with reference to the principle of above-mentioned band gap reference circuit 10 identical zero-temperature coefficient electrical current I _rEFwith zero-temperature coefficient voltage V _rEF.

Under this structure, for enabling bandgap reference circuit 20 normal runnings, system voltage VDD need satisfy condition into $\mathrm{VDD}\&GreaterEqual;V_{\mathrm{SG}}+V_{\mathrm{DS}}+{\mathrm{<figure-callout\; id="2"\; label="V\; BE"\; filenames="HDA00002182409900041.png"\; state="\{\{state\}\}">V</figure-callout>}}_{\mathrm{BE}}\&CenterDot;\left(\frac{{{\mathrm{<figure-callout\; id="1"\; label="R"\; filenames="HDA00002182409900011.png,HDA00002182409900021.png"\; state="\{\{state\}\}">R</figure-callout>}}_1}^{\&prime;}}{{{\mathrm{<figure-callout\; id="1"\; label="R"\; filenames="HDA00002182409900011.png,HDA00002182409900021.png"\; state="\{\{state\}\}">R</figure-callout>}}_1}^{\&prime;}+{{\mathrm{<figure-callout\; id="2"\; label="R"\; filenames="HDA00002182409900041.png"\; state="\{\{state\}\}">R</figure-callout>}}_2}^{\&prime;}}\right)\widetilde{=}0.8V+0.2V+V_{\mathrm{BE}2}\&CenterDot;\left(\frac{{{\mathrm{<figure-callout\; id="1"\; label="R"\; filenames="HDA00002182409900011.png,HDA00002182409900021.png"\; state="\{\{state\}\}">R</figure-callout>}}_1}^{\&prime;}}{{{\mathrm{<figure-callout\; id="1"\; label="R"\; filenames="HDA00002182409900011.png,HDA00002182409900021.png"\; state="\{\{state\}\}">R</figure-callout>}}_1}^{\&prime;}+{{\mathrm{<figure-callout\; id="2"\; label="R"\; filenames="HDA00002182409900041.png"\; state="\{\{state\}\}">R</figure-callout>}}_2}^{\&prime;}}\right)>1V$ (i.e. the path P 2 to ground connection by system voltage VDD).Yet, though the framework of band gap reference circuit 20 can utilize the mode of electric resistance partial pressure, make the framework of minimum required system voltage VDD band gap reference circuit 10 reduce by a voltage V _dS=0.2V(adjusting resistance R ₂the resistance of ＇ is much larger than resistance R ₁＇), the operational amplifier 200 locking input voltage V but still need use is transduceed _iN+with V _iN-, and with resistance R ₁＇, R ₂＇ balance resistance R ₁, R ₂electric current, therefore still there is the shortcoming of band gap reference circuit 10 frameworks.

On the other hand, please refer to Fig. 3, Fig. 3 is the schematic diagram of a band gap reference circuit 30 in known technology.As shown in Figure 3, band gap reference circuit 30 is similar to band gap reference circuit 10 parts, therefore intimate assembly and signal represent with same-sign, band gap reference circuit 30 is with the main difference of band gap reference circuit 10, one transduction operational amplifier 300 removes the tail current source (tail-current-source) 102 in order to balanced balanced current in the operational amplifier 100 of originally transduceing, and to replacing the N-type MOS (metal-oxide-semiconductor) transistor of the operational amplifier 100 of originally transduceing, input right structure with NPN bipolarity junction transistor Q1 ＇ and Q2 ＇ input, make input can utilize a current mirror Q1-Q1 ＇ and a current mirror Q2-Q2 ＇ to control by bipolarity junction transistor Q1 and Q2 to the electric current of Q1 ＇ and Q2 ＇.In this case, can at band gap reference circuit 30, obtain identical zero-temperature coefficient electrical current I with reference to the principle of above-mentioned band gap reference circuit 10 _rEFwith zero-temperature coefficient voltage V _rEF.

Under this structure, for enabling bandgap reference circuit 30 normal runnings, system voltage VDD need satisfy condition into $\mathrm{VDD}\&GreaterEqual;\max (V_{\mathrm{BE}}+V_{\mathrm{DS}},V_{\mathrm{SG}}+V_{\mathrm{DS}})\widetilde{=}\max (0.6V+0.2V,0.8V+0.2V)=1V$ (i.e. a path P 3 or the path P 4 to ground connection by system voltage VDD).Yet, though the framework of band gap reference circuit 30 can utilize use instead current mirror mode remove transduction operational amplifier in tail current source, make the framework of minimum required system voltage VDD band gap reference circuit 10 reduce by a voltage V _dS=0.2V, but still need to use transduction operational amplifier 200 locking input voltage V _iN+with V _iN-, and with resistance R ₁＇, R ₂＇ balance resistance R ₁, R ₂electric current, therefore still possess the shortcoming of band gap reference circuit 10 frameworks.

From the above, the known band gap reference circuit for low system voltage operation is because being used known transduction operational amplifier framework latch voltage to produce positive temperature coefficient (PTC) electric current, and need produce with extra resistance balance the circuit of negative temperature parameter current, so circuit structure is comparatively complicated.In view of this, known technology has improved necessity in fact.

Summary of the invention

Therefore, fundamental purpose of the present invention is to provide a kind of band gap reference circuit and dual output oneself parameter voltage stabilizator thereof with low system voltage and low layout area.

The present invention discloses a kind of band gap reference circuit.This band gap reference circuit includes dual output oneself's parameter voltage stabilizator and with reference to producing circuit.This dual output oneself parameter voltage stabilizator includes a self-bias transduction operational amplifier, the area difference that is used for inputting right bipolarity junction transistor by one produce one first positive temperature coefficient (PTC) electric current to this input to carrying out bias voltage, and produce a positive temperature coefficient (PTC) and control voltage and negative temperature coefficient control voltage; And a feedback voltage amplifier, be used for amplifying this negative temperature coefficient and control voltage, and export a reference voltage and give this input to feedbacking, to produce one first negative temperature parameter current.This is used for controlling voltage and this negative temperature coefficient control voltage according to this positive temperature coefficient (PTC) with reference to producing circuit, and generation one adds total voltage or and adds total current.

The present invention also discloses a kind of dual output oneself parameter voltage stabilizator, for a band gap reference circuit.This dual output oneself parameter voltage stabilizator includes a self-bias transduction operational amplifier, the area difference that is used for inputting right bipolarity junction transistor by one produces one first positive temperature coefficient (PTC) electric current and gives this input to carrying out bias voltage, and produces a positive temperature coefficient (PTC) and control voltage and negative temperature coefficient control voltage; And a feedback voltage amplifier, be used for amplifying this negative temperature coefficient and control voltage, and export a reference voltage to this input to feedbacking, to produce one first negative temperature parameter current.

At this, coordinate detailed description and claims of following diagram, embodiment, by address other object of the present invention and advantage and be specified in after.

Accompanying drawing explanation

Fig. 1 is the schematic diagram of a band gap reference circuit in known technology.

Fig. 2 is the schematic diagram of another band gap reference circuit in known technology.

Fig. 3 is the schematic diagram of a band gap reference circuit more in known technology.

Fig. 4 is the schematic diagram of the embodiment of the present invention one band gap reference circuit.

Fig. 5 is for implementing the schematic diagram of a self-bias transduction operational amplifier of the self-bias transduction operational amplifier shown in Fig. 4.

Fig. 6 is for implementing the schematic diagram of a feedback voltage amplifier of the feedback voltage amplifier shown in Fig. 4.

Fig. 7 is for implementing the schematic diagram of a transduction amplifier of the central transduction amplifier of the transduction amplifier shown in Fig. 4.

Fig. 8 implements the schematic diagram of a band gap reference circuit of the band gap reference circuit shown in Fig. 4 with the transduction of self-bias shown in Fig. 5 to Fig. 7 operational amplifier, feedback voltage amplifier and transduction amplifier.

Fig. 9 is the schematic diagram that another embodiment of the present invention is used for implementing a self-bias transduction operational amplifier of the self-bias transduction operational amplifier shown in Fig. 4.

Figure 10 is the schematic diagram that another embodiment of the present invention is used for implementing a feedback voltage amplifier of the feedback voltage amplifier shown in Fig. 4.

Figure 11 is the schematic diagram that another embodiment of the present invention is used for implementing a transduction amplifier of a transduction amplifier in the middle of the transduction amplifier shown in Fig. 4.

Figure 12 implements the schematic diagram of a band gap reference circuit of the band gap reference circuit shown in Fig. 4 with the transduction amplifier shown in feedback voltage amplifier, the transduction amplifier shown in Fig. 7 and the Figure 11 shown in the self-bias transduction operational amplifier shown in Fig. 9, Fig. 6.

Wherein, description of reference numerals is as follows:

10,20,30,40,80,120 band gap reference circuits

100,200,300 transduction operational amplifiers

102 tail current sources

400 dual output oneself parameter voltage stabilizators

402 with reference to producing circuit

404,50,90 self-bias transduction operational amplifiers

406,60,1000 feedback voltage amplifiers

V _iN+, V _iN-input voltage

Q1～Q4, Q1 ＇, Q2 ＇, Q3, Q4 bipolarity junction transistor

R, R _l, R _l＇, R ₁, R ₂, R ₁＇, R ₂＇ resistance

I _d, I _pTC1～I _pTC3, I _pTCXpositive temperature coefficient (PTC) electric current

I _d＇, I _nTC1～I _nTC3, I _nTCXnegative temperature parameter current

I _rEFzero-temperature coefficient electrical current

V _rEFzero-temperature coefficient voltage

VDD system voltage

P1～P9 path

V _pTCpositive temperature coefficient (PTC) is controlled voltage

V _nTCnegative temperature coefficient is controlled voltage

V _freference voltage

V _sUMadd total voltage

I _sUMadd total current

Gm ₁～gm ₄, 70,70N, 70P, 110 transduction amplifiers

M1～M8 MOS (metal-oxide-semiconductor) transistor

V _b1, V _b2bias voltage

R _sUM, R ＇, R _l" resistance

Embodiment

Please refer to Fig. 4, Fig. 4 is that the embodiment of the present invention one band gap is with reference to the schematic diagram of (bandgap reference) circuit 40.As shown in Figure 4, band gap reference circuit 40 includes dual output oneself's parameter voltage stabilizator (self-referenced regulator) 400 and with reference to producing circuit 402.In simple terms, dual output oneself parameter voltage stabilizator 400 includes a self-bias transduction operational amplifier 404(operationaltransconductance amplifier, OTA) and a feedback voltage amplifier 406, the area difference that self-bias transduction operational amplifier 404 can be inputted right bipolarity junction transistor (bipolar junction transistor, BJT) by one produces a positive temperature coefficient (PTC) electric current I _pTC1it is inputted carrying out bias voltage, and produce a positive temperature coefficient (PTC) control voltage V _pTCcontrol voltage V with a negative temperature coefficient _nTC, and feedback voltage amplifier 406 can amplify negative temperature coefficient control voltage V _nTC, and export a reference voltage V _fgive the input of self-bias transduction operational amplifier 404 to feedbacking, to produce a negative temperature parameter current I _nTC1.

In this case, the area difference that self-bias transduction operational amplifier 404 is inputted right bipolarity junction transistor with it produces positive temperature coefficient (PTC) electric current I _pTC1it is inputted carrying out self-bias with balanced balanced current, therefore except not needing, knownly in order to a tail current source (tail-current-source) of balanced balanced current, can reduce required system voltage VDD, self-bias transduction operational amplifier 404 produces positive temperature coefficient (PTC) electric current I _pTC1mode, and feedback voltage amplifier 406 feedback reference voltage V _fthe input of giving self-bias transduction operational amplifier 404 produces negative temperature parameter current I to carrying out self-reference _nTC1mode, compare known band gap reference circuit and can reduce required basic circuit.Thus, dual output oneself parameter voltage stabilizator 400 can utilize self-bias and self-reference mode to produce positive temperature coefficient (PTC) electric current I _pTC1and negative temperature parameter current I _nTC1therefore, can less circuit be applicable to the application of low system voltage VDD.

On the other hand, because positive temperature coefficient (PTC) is controlled voltage V _pTCcontrol voltage V with negative temperature coefficient _nTCbe relevant to respectively positive temperature coefficient (PTC) electric current I _pTC1and negative temperature parameter current I _nTC1, therefore with reference to producing circuit 402, can control voltage V according to positive temperature coefficient (PTC) _pTCcontrol voltage V with negative temperature coefficient _nTC, produce one and add total voltage V _sUMor one add up electric current I _sUM.Specifically, with reference to producing circuit 402, include transduction amplifier gm ₁～gm ₄, be used for respectively positive temperature coefficient (PTC) to control voltage V _pTCcontrol voltage V with negative temperature coefficient _nTC, be converted into positive temperature coefficient (PTC) electric current and I _pTC2, negative temperature parameter current I _nTC2, positive temperature coefficient (PTC) electric current and I _pTC3and negative temperature parameter current I _nTC3.Then, transduction amplifier gm ₁～gm ₂by positive temperature coefficient (PTC) electric current and I _pTC2and negative temperature parameter current I _nTC2, add up and produce totalling electric current I _sUM, wherein, add up electric current I _sUMcan be synthetic via proper proportion (as adjusted transduction amplifier gm ₁～gm ₂gain) and there is a specified temp coefficient or a zero-temperature coefficient.Similarly, transduction amplifier gm ₃～gm ₄positive temperature coefficient (PTC) electric current and the I of producing _pTC3and negative temperature parameter current I _nTC3the Ke Jia General Logistics Department resistance R of flowing through _sUMto produce, add total voltage V _sUM, wherein, add total voltage V _sUMcan be synthetic and there is a specified temp coefficient or a zero-temperature coefficient via proper proportion.Thus, with reference to produce circuit 402 can produce there is specified temp coefficient or zero-temperature coefficient add total voltage V _sUMor totalling electric current I _sUM.

Particularly, please refer to Fig. 5, Fig. 5 is for implementing the schematic diagram of a self-bias transduction operational amplifier 50 of the self-bias transduction operational amplifier 404 shown in Fig. 4.As shown in Figure 5, self-bias transduction operational amplifier 50 includes bipolarity junction transistor Q3, Q4 and a resistance R ＇, its detailed architecture and connected mode are as shown in Figure 5, an emitter-base bandgap grading that is bipolarity junction transistor Q3 is coupled to a ground end, the area of bipolarity junction transistor Q4 is a specific factor K of bipolarity junction transistor Q3, and forming one of self-bias transduction operational amplifier 50 with bipolarity junction transistor Q3 inputs Q3-Q4, a base stage of bipolarity junction transistor Q4 is coupled to a base stage of bipolarity junction transistor Q3, one end of resistance R ＇ is coupled to an emitter-base bandgap grading of bipolarity junction transistor Q4, the other end is coupled to this ground end.

In this case, due to self-bias transduction operational amplifier 50, to using NPN bipolarity junction transistor Q3, Q4 that area ratio is 1:K right as input, the poor difference V of base emitter voltage that utilizes the area difference of bipolarity junction transistor Q3, Q4 to cause _bE3-V _bE4and the resistance resistance R ＇ that is R (cross-pressure that is resistance R ＇ is V _bE3-V _bE4), can produce the resistance R ＇ positive temperature coefficient (PTC) electric current of flowing through

give input Q3-Q4 is carried out to bias voltage.Wherein, with reference to the aforementioned positive temperature coefficient (PTC) electric current I that is relevant to _dpart illustrates known positive temperature coefficient (PTC) electric current I _pTC1also there is positive temperature coefficient (PTC).

On the other hand, self-bias transduction operational amplifier 50 can separately comprise a current mirror M1-M2, the one source pole of a MOS (metal-oxide-semiconductor) transistor M1 of current mirror M1-M2 is coupled to system voltage VDD, one gate is coupled to a drain, this drain is coupled to a collector of bipolarity junction transistor Q3, the one source pole of a MOS (metal-oxide-semiconductor) transistor M2 of current mirror M1-M2 is coupled to system voltage VDD, and a gate is coupled to this gate of MOS (metal-oxide-semiconductor) transistor M1, and a drain is coupled to a collector of bipolarity junction transistor Q4.In this case, current mirror M1-M2 can be by the positive temperature coefficient (PTC) electric current I of the branch of MOS (metal-oxide-semiconductor) transistor M2 _pTC1be copied to the branch of MOS (metal-oxide-semiconductor) transistor M1.Thus, due to the input of self-bias transduction operational amplifier 50, to Q3-Q4, need not provide bias current by outside is self-bias, and does not need a known tail current source in order to balanced balanced current, thus system voltage VDD need satisfy condition into

(i.e. the path P 5 to ground connection by system voltage VDD), thereby required system voltage VDD is lower, and the positive temperature coefficient (PTC) electric current I of MOS (metal-oxide-semiconductor) transistor M1 output _pTC1there is positive temperature coefficient (PTC), so the poor positive temperature coefficient (PTC) control voltage V with positive temperature coefficient (PTC) that forms of a source gate voltage of MOS (metal-oxide-semiconductor) transistor M1 _pTC.

In addition, please refer to Fig. 6, Fig. 6 is for implementing the schematic diagram of a feedback voltage amplifier 60 of the feedback voltage amplifier 406 shown in Fig. 4.As shown in Figure 6, feedback voltage amplifier 60 includes a MOS (metal-oxide-semiconductor) transistor M3 and a resistance R _l", as shown in Figure 5, the one source pole of MOS (metal-oxide-semiconductor) transistor M3 is coupled to system voltage VDD for its detailed architecture and connected mode, and a gate receives negative temperature coefficient and controls voltage V _nTC(the poor negative temperature coefficient that equals of a source gate voltage that is MOS (metal-oxide-semiconductor) transistor M3 is controlled voltage V _nTC), resistance R _l" one end be coupled to a drain of MOS (metal-oxide-semiconductor) transistor M3, the other end is coupled to and holds, this drain and the resistance R of MOS (metal-oxide-semiconductor) transistor M3 _l" this end be coupled to input to Q3-Q4 output reference voltage V _fgive input to Q3-Q4, wherein, negative temperature coefficient is controlled voltage V _nTCpoor for the system voltage VDD of self-bias transduction operational amplifier 50 and an output voltage, i.e. a source drain voltage difference of MOS (metal-oxide-semiconductor) transistor M2 as shown in Figure 5.

In this case, MOS (metal-oxide-semiconductor) transistor M3 receives as amplifier stage the negative temperature coefficient of being exported by self-bias transduction operational amplifier 50 and controls voltage V _nTC, the resistance R that the transduction of recycling MOS (metal-oxide-semiconductor) transistor M3 and resistance are L*R _l" after amplification, produce reference voltage V _ffeedbacking to input is that dual output oneself parameter voltage stabilizator 400 has self-reference characteristic and must outside additionally do not provide reference voltage to Q3-Q4().Thus, due to reference voltage V _fcan equal that the base emitter voltage of bipolarity junction transistor Q3 is poor is and possess negative temperature coefficient, so the MOS (metal-oxide-semiconductor) transistor resistance R of flowing through that M3 produces _l" negative temperature parameter current

also possess negative temperature coefficient, make the poor negative temperature coefficient control voltage V with negative temperature coefficient that forms of source gate voltage of MOS (metal-oxide-semiconductor) transistor M3 _nTC(utilizing to feedback makes the self-bias transduction system voltage VDD of operational amplifier 50 and the difference of an output voltage have negative temperature coefficient, a source drain voltage difference of MOS (metal-oxide-semiconductor) transistor M2 has negative temperature coefficient as shown in Figure 5), and in feedback voltage amplifier 60 system voltage VDD need satisfy condition into $\mathrm{VDD}\&GreaterEqual;V_F+V_{\mathrm{SD}}=V_{\mathrm{BE}3}+V_{\mathrm{SD}}\widetilde{=}0.6V+0.2V=0.8V$ (i.e. the path P 6 to ground connection by system voltage VDD), required system voltage VDD is also lower.

On the other hand, please refer to Fig. 7, Fig. 7 is for implementing the transduction amplifier gm shown in Fig. 4 ₁～gm ₄a central transduction amplifier gm _xone transduction amplifier 70 schematic diagram.As shown in Figure 7, feedback voltage amplifier 60 includes a MOS (metal-oxide-semiconductor) transistor M4, and as shown in Figure 7, the one source pole of MOS (metal-oxide-semiconductor) transistor M4 is coupled to system voltage VDD for its detailed architecture and connected mode, and a gate is used for receiving positive temperature coefficient (PTC) and controls voltage V _pTCor negative temperature coefficient is controlled voltage V _nTC(the poor positive temperature coefficient (PTC) that equals of a source gate voltage that is MOS (metal-oxide-semiconductor) transistor M4 is controlled voltage V _pTCor negative temperature coefficient is controlled voltage V _nTC), a drain is used for exporting a positive temperature coefficient (PTC) electric current I _pTCXan or negative temperature parameter current I _nTCX.In this case, MOS (metal-oxide-semiconductor) transistor M4 receives positive temperature coefficient (PTC) as amplifier stage and controls voltage V _pTCor negative temperature coefficient is controlled voltage V _nTC, the transduction of recycling M4 is controlled voltage V by positive temperature coefficient (PTC) _pTCor negative temperature coefficient is controlled voltage V _nTCamplify and be converted to positive temperature coefficient (PTC) electric current and I _pTCXor negative temperature parameter current I _nTCX.

Further, please refer to Fig. 8, Fig. 8 implements the schematic diagram of a band gap reference circuit 80 of the band gap reference circuit 40 shown in Fig. 4 with the transduction of self-bias shown in Fig. 5 to Fig. 7 operational amplifier 50, feedback voltage amplifier 60 and transduction amplifier 70, wherein, transduction amplifier 70P, 70N are identical with the circuit of transduction amplifier 70, and only transduce amplifier 70P, 70N receive respectively positive temperature coefficient (PTC) and control voltage V _pTCand negative temperature coefficient is controlled voltage V _nTC, to export positive temperature coefficient (PTC) electric current I _pTCXand negative temperature parameter current I _nTCX.That exports in the case, adds total voltage V _sUMcan be expressed as $V_{\mathrm{SUM}}=I_{\mathrm{SUM}}\&CenterDot;R_{\mathrm{SUM}}=(I_{\mathrm{PTCX}}+I_{\mathrm{NTCX}})\&CenterDot;R_{\mathrm{SUM}}=\frac{V_T\&CenterDot;\ln \left(K\right)}{R}\&CenterDot;R_{\mathrm{SUM}}+\frac{V_{\mathrm{BE}3}}{L*R}\&CenterDot;R_{\mathrm{SUM}},$ Its scope is between 0V ~ (VDD-V _dSbetween)=0V ~ (VDD-0.2V), can utilize suitable adjustment to make to add total voltage V _sUMthere is specified temp coefficient or zero-temperature coefficient (with known adjusting resistance R, R _lbetween the mode of ratio L of resistance similar), and system voltage VDD need satisfy condition into $\mathrm{VDD}\&GreaterEqual;\max (V_{\mathrm{CE}}+V_{\mathrm{SG}},V_{\mathrm{BE}3}+V_{\mathrm{SD}})\widetilde{=}\max (0.2V+0.8V,0.6V+0.2V)=1V$ (i.e. path P 5, the P6 to ground connection by system voltage VDD).Thus, compared to the known band gap reference circuit for low system voltage operation, need a large amount of assemblies, the basic circuit of the present invention only needs two bipolarity junction transistors, five MOS (metal-oxide-semiconductor) transistor, electric capacity (as miller capacitance so that frequency compensation to be provided) and three resistance, can significantly reduce required component count, circuit power consumption and layout area, and can reduce and do not mate caused error because of assembly.

It should be noted that main spirits of the present invention is to utilize self-bias and self-reference mode to produce positive temperature coefficient (PTC) electric current I _pTC1and negative temperature parameter current I _nTC1, with add up produce there is specified temp coefficient or zero-temperature coefficient add total voltage V _sUMor totalling electric current I _sUMtherefore, can less basic circuit be applicable to the application of low system voltage VDD.Those of ordinary skills work as and can modify according to this or change, and are not limited to this.For instance, in above-described embodiment with two transduction amplifier gm ₁～gm ₂, produce and add up electric current I _sUM, and with two transduction amplifier gm ₃～gm ₄and resistance R _sUMgeneration adds total voltage V _sUM, but transduction amplifier that in other embodiments also can other number produce there is specified temp coefficient or zero-temperature coefficient add total voltage V _sUMor totalling electric current I _sUM; In addition, the transistor that the above-mentioned transistor of implementing with MOS (metal-oxide-semiconductor) transistor also can other type is implemented, and is not limited to this; Self-bias transduction operational amplifier 404, feedback voltage amplifier 406 and reference produce circuit 402 and also can implement by other circuit structure, as long as can reach its function separately, and do not limit the framework of above-mentioned Fig. 5 to Fig. 8.

For instance, please refer to Fig. 9, Fig. 9 is the schematic diagram that another embodiment of the present invention is used for implementing a self-bias transduction operational amplifier 90 of the self-bias transduction operational amplifier 404 shown in Fig. 4.As shown in Figure 9, self-bias transduction operational amplifier 90 is similar to self-bias transduction operational amplifier 50 parts, therefore intimate assembly and signal represent with same-sign, self-bias transduction operational amplifier 90 is with the main difference of self-bias transduction operational amplifier 50, and self-bias transduction operational amplifier 90 has a folding concatenation type (folded cascode) framework (with bias voltage V _b1, V _b2carry out bias voltage).

In the case, negative temperature coefficient is controlled voltage V _nTCalso poor for the system voltage VDD of self-bias transduction operational amplifier 90 and an output voltage, as shown in Figure 9 a source drain voltage difference of MOS (metal-oxide-semiconductor) transistor M2 be connected in series level in the closing of a source drain voltage difference of a MOS (metal-oxide-semiconductor) transistor, and system voltage VDD need satisfy condition into

(i.e. the path P 7 to ground connection by system voltage VDD).Thus, although self-bias transduction operational amplifier 90 and circuit structure compared with self-bias transduction operational amplifier 50 complexity, but the output impedance of folding concatenation type framework is large, latch voltage ability is strong and noise resisting ability is stronger, and with drawing, source voltage is poor to be changed to avoid electric current can effectively to resist passage length modulation effect (Channel length modulation).

On the other hand, please refer to Figure 10, Figure 10 is the schematic diagram that another embodiment of the present invention is used for implementing a feedback voltage amplifier 1000 of the feedback voltage amplifier 406 shown in Fig. 4.As shown in figure 10, feedback voltage amplifier 1000 is similar to feedback voltage amplifier 60 parts, therefore intimate assembly and signal represent with same-sign, feedback voltage amplifier 1000 is with the main difference of feedback voltage amplifier 60, with a N-type MOS (metal-oxide-semiconductor) transistor M5 input, replace P type MOS (metal-oxide-semiconductor) transistor M3 input in script feedback voltage amplifier 60, and carry out current reversal, its detailed architecture and connected mode are as shown in figure 10, a gate that is a MOS (metal-oxide-semiconductor) transistor M6 of a current mirror M6-M7 in feedback voltage amplifier 1000 is coupled to a drain, a gate of one MOS (metal-oxide-semiconductor) transistor M7 is coupled to this gate of MOS (metal-oxide-semiconductor) transistor M6, a gate of MOS (metal-oxide-semiconductor) transistor M5 receives negative temperature coefficient and controls voltage V _nTC(the poor negative temperature coefficient that equals of a source gate voltage that is MOS (metal-oxide-semiconductor) transistor M6 is controlled voltage V _nTC), a drain is coupled to this drain of MOS (metal-oxide-semiconductor) transistor M6, and one source pole is coupled to this ground end, resistance R _l" one end be coupled to a drain of MOS (metal-oxide-semiconductor) transistor M7, the other end is coupled to and holds, this drain and the resistance R of MOS (metal-oxide-semiconductor) transistor M7 _l" this end be coupled to input to Q3-Q4 output reference voltage V _fgive input to Q3-Q4.

In this case, due to reference voltage V _fcan equal that the base emitter voltage of bipolarity junction transistor Q3 is poor is

and possess negative temperature coefficient, so the MOS (metal-oxide-semiconductor) transistor resistance R of flowing through that M7 produces _l" negative temperature parameter current also possesses negative temperature coefficient, make that the source gate voltage source gate voltage poor and MOS (metal-oxide-semiconductor) transistor M6 of MOS (metal-oxide-semiconductor) transistor M7 is poor has negative temperature coefficient, so the poor negative temperature coefficient with negative temperature coefficient that forms of the source gate voltage of MOS (metal-oxide-semiconductor) transistor M6 is controlled voltage V _nTC(utilizing to feedback makes the system voltage VDD of self-bias transduction operational amplifier 50 or 90 and the difference of M5 drain voltage have negative temperature coefficient.Now, system voltage VDD need satisfy condition into $\mathrm{VDD}\&GreaterEqual;\max (V_{\mathrm{SG}}+V_{\mathrm{DS}},V_F+V_{\mathrm{SD}})\widetilde{=}\max (0.8V+0.2V,0.6V+0.2V)=1V$ (i.e. path P 8, the P9 to ground connection by system voltage VDD).

On the other hand, please refer to Figure 11, Figure 11 is that another embodiment of the present invention is used for implementing the transduction amplifier gm shown in Fig. 4 ₁～gm ₄a central transduction amplifier gm _xone transduction amplifier 110 schematic diagram.As shown in figure 11, transduction amplifier 110 is similar to transduction amplifier 70 parts, therefore intimate assembly and signal represent with same-sign, transduction amplifier 110 is with the main difference of transduction amplifier 70, transduction amplifier 110 also comprises a MOS (metal-oxide-semiconductor) transistor M8, in itself and Fig. 9, in the folding concatenation type framework of self-bias transduction operational amplifier 90, a MOS (metal-oxide-semiconductor) transistor forms a current mirror, one gate is coupled to this transistorized gate, and a drain is coupled to this drain of MOS (metal-oxide-semiconductor) transistor M4.

In this case, coordinate Fig. 9 known, when the gate of MOS (metal-oxide-semiconductor) transistor M4 receives, there is the positive temperature coefficient (PTC) that the self-bias transduction operational amplifier 90 of folding concatenation type framework exports and control voltage V _pTCtime, positive temperature coefficient (PTC) electric current I in the electric current that the drain of MOS (metal-oxide-semiconductor) transistor M4 is exported and Fig. 9 _pTC1relevant to the sum total of the electric current of the folding concatenation type framework of flowing through, therefore in order to export and positive temperature coefficient (PTC) electric current I _pTC1relevant positive temperature coefficient (PTC) electric current I _pTCXtransduction amplifier 110 also comprises that MOS (metal-oxide-semiconductor) transistor in the folding concatenation type framework with self-bias transduction operational amplifier 90 forms the MOS (metal-oxide-semiconductor) transistor M8 of current mirror, make an electric current that an electric current that the drain of MOS (metal-oxide-semiconductor) transistor M4 is exported deducts the MOS (metal-oxide-semiconductor) transistor M8 that flows through only with positive temperature coefficient (PTC) electric current I _pTC1relevant with as positive temperature coefficient (PTC) electric current I _pTCXoutput.Similarly, also can receive negative temperature coefficient control voltage V by same structure _nTCwith output negative temperature parameter current I _nTCX.

Further, please refer to Figure 12, Figure 12 implements the schematic diagram of a band gap reference circuit 120 of the band gap reference circuit 40 shown in Fig. 4 with self-bias transduction operational amplifier 90, feedback voltage amplifier 60, transduction amplifier 70 and the transduction amplifier 110 shown in Fig. 9, Fig. 6, Fig. 7 and Figure 11, wherein, transduction amplifier 110,70 receives respectively positive temperature coefficient (PTC) and controls voltage V _pTCand negative temperature coefficient is controlled voltage V _nTC, to export positive temperature coefficient (PTC) electric current I _pTCXand negative temperature parameter current I _nTCX.That exports in the case, adds total voltage V _sUMcan be expressed as equally $V_{\mathrm{SUM}}=I_{\mathrm{SUM}}\&CenterDot;R_{\mathrm{SUM}}=(I_{\mathrm{PTCX}}+I_{\mathrm{NTCX}})\&CenterDot;R_{\mathrm{SUM}}=\frac{V_T\&CenterDot;\ln \left(K\right)}{R}\&CenterDot;R_{\mathrm{SUM}}+\frac{V_{\mathrm{BE}3}}{L*R}\&CenterDot;R_{\mathrm{SUM}},$ Its scope is between 0V ~ (VDD-V _dSbetween)=0V ~ (VDD-0.2V), can utilize suitable adjustment to make to add total voltage V _sUMthere is specified temp coefficient or zero-temperature coefficient (with known adjusting resistance R, R _lbetween the mode of ratio L of resistance similar), and system voltage VDD need satisfy condition into $\mathrm{VDD}\&GreaterEqual;\max (V_{\mathrm{SG}}+V_{\mathrm{DS}},V_{\mathrm{BE}2}+V_{\mathrm{SD}})\widetilde{=}\max (0.2V+0.8V,0.6V+0.2V)=1V$ (i.e. path P 5, the P6 to ground connection by system voltage VDD).

The transduction of self-bias shown in above-mentioned operational amplifier, feedback voltage amplifier and reference produce the circuit of circuit, can coordinate actual demand to carry out combination to implement band gap reference circuit, still maintain its function and advantage, and be not limited to the combination of band gap reference circuit 80,120.

In known technology, because the band gap reference circuit for low system voltage operation is used known transduction operational amplifier framework latch voltage to produce positive temperature coefficient (PTC) electric current, and need produce with extra resistance balance the circuit of negative temperature parameter current, so circuit structure is comparatively complicated.In comparison, the present invention can utilize self-bias and self-reference mode to produce positive temperature coefficient (PTC) electric current I _pTC1and negative temperature parameter current I _nTC1, with add up produce there is specified temp coefficient or zero-temperature coefficient add total voltage V _sUMor totalling electric current I _sUMtherefore, can less basic circuit be applicable to the application of low system voltage VDD.

The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (19)

1. a band gap reference circuit, is characterized in that, includes:

One dual output oneself parameter voltage stabilizator, includes:

One self-bias transduction operational amplifier, the area difference that is used for inputting right bipolarity junction transistor by one produce one first positive temperature coefficient (PTC) electric current to this input to carrying out bias voltage, and produce a positive temperature coefficient (PTC) and control voltage and negative temperature coefficient control voltage; And

One feedback voltage amplifier, is used for amplifying this negative temperature coefficient and controls voltage, and export a reference voltage and give this input to feedbacking, to produce one first negative temperature parameter current;

And

One with reference to producing circuit, is used for controlling voltage and this negative temperature coefficient control voltage according to this positive temperature coefficient (PTC), and generation one adds total voltage or and adds total current.

2. band gap reference circuit as claimed in claim 1, is characterized in that, this includes with reference to producing circuit:

At least one transduction amplifier, is used for that this positive temperature coefficient (PTC) is controlled to voltage and this negative temperature coefficient is controlled voltage, is converted at least one the second positive temperature coefficient (PTC) electric current and at least one the second negative temperature parameter current.

3. band gap reference circuit as claimed in claim 2, it is characterized in that, this at least one transduction amplifier is by this at least one second positive temperature coefficient (PTC) electric current and this at least one the second negative temperature parameter current, at least both add up generation this adds total current, and this adds total current and has a specified temp coefficient or a zero-temperature coefficient.

4. band gap reference circuit as claimed in claim 2, is characterized in that, also includes:

One first resistance, is used for, according to both closing at least in this at least one the second positive temperature coefficient (PTC) electric current and this at least one the second negative temperature parameter current, producing this and adding total voltage, and this adds total voltage and has a specified temp coefficient or a zero-temperature coefficient.

5. band gap reference circuit as claimed in claim 1, is characterized in that, this self-bias transduction operational amplifier includes:

One first bipolarity junction transistor, includes an emitter-base bandgap grading, a base stage and a collector, and this emitter-base bandgap grading is coupled to a ground end;

One second bipolarity junction transistor, its area is a specific factor of this first bipolarity junction transistor, to form this input right with this first bipolarity junction transistor, include an emitter-base bandgap grading,

One base stage and a collector, this base stage is coupled to this base stage of this first bipolarity junction transistor; And

One second resistance, its one end is coupled to this emitter-base bandgap grading of this second bipolarity junction transistor, and the other end is coupled to this ground end;

Wherein, this first positive temperature coefficient (PTC) electric current this second resistance of flowing through.

6. band gap reference circuit as claimed in claim 5, is characterized in that, this self-bias transduction operational amplifier also includes:

One first current mirror, includes:

One the first transistor, includes a gate, a drain and one source pole, and this gate is coupled to this drain, and this drain is coupled to this collector of this first bipolarity junction transistor; And

One transistor seconds, includes a gate, a drain and one source pole, and this gate is coupled to this gate of this first transistor, and this drain is coupled to this collector of this second bipolarity junction transistor.

7. band gap reference circuit as claimed in claim 5, it is characterized in that, one source gate voltage of this first transistor is poor is that this positive temperature coefficient (PTC) is controlled voltage, and this self-bias transduction system voltage for operational amplifier is this negative temperature coefficient control voltage with the difference of an output voltage.

8. band gap reference circuit as claimed in claim 5, is characterized in that, this self-bias transduction operational amplifier has a folding concatenation type framework.

9. band gap reference circuit as claimed in claim 1, is characterized in that, this feedback voltage amplifier includes:

One the 3rd transistor, includes a gate, a drain and one source pole, and this gate is used for receiving this negative temperature coefficient and controls voltage; And

One the 3rd resistance, its one end is coupled to the 3rd transistorized this drain, and the other end is coupled to a ground end;

Wherein, this end of the 3rd transistorized this drain and the 3rd resistance be coupled to this input to and export this reference voltage to give this input right, this first negative temperature parameter current the 3rd resistance of flowing through.

10. band gap reference circuit as claimed in claim 1, is characterized in that, this feedback voltage amplifier includes:

One second current mirror, includes:

One the 4th transistor, includes a gate, a drain and one source pole, and this gate is coupled to this drain; And

One the 5th transistor, includes a gate, a drain and one source pole, and this gate is coupled to the 4th transistorized this gate;

One the 6th transistor, includes a gate, a drain and one source pole, and this gate is used for receiving this negative temperature coefficient and controls voltage, and this drain is coupled to the 4th transistorized this drain, and this source electrode is coupled to a ground end; And

One the 4th resistance, its one end is coupled to the 5th transistorized this drain, and the other end is coupled to this ground end;

Wherein, this end of the 5th transistorized this drain and the 3rd resistance be coupled to this input to and export this reference voltage to give this input right, this first negative temperature parameter current the 4th resistance of flowing through.

11. band gap reference circuits as claimed in claim 2, is characterized in that, in this at least one transduction amplifier, one first transduction amplifier includes:

One the 7th transistor, includes a gate, a drain and one source pole, and this gate is used for receiving this positive temperature coefficient (PTC) and controls voltage or this negative temperature coefficient control voltage, and this drain is used for exporting one second positive temperature coefficient (PTC) electric current or one second negative temperature parameter current.

12. band gap reference circuits as claimed in claim 2, is characterized in that, in this at least one transduction amplifier, one second transduction amplifier includes:

One the 8th transistor, includes a gate, a drain and one source pole, and this gate is used for receiving this negative temperature coefficient and controls voltage; And

One the 9th transistor, form one the 3rd current mirror with 1 the tenth transistor in a folding concatenation type framework of this self-bias transduction operational amplifier, include a gate, a drain and one source pole, this gate is coupled to a tenth transistorized gate, and this drain is coupled to the 8th transistorized this drain;

Wherein, it is one second positive temperature coefficient (PTC) electric current or one second negative temperature parameter current that the electric current that the 8th transistorized this drain is exported deducts the 9th transistorized electric current of flowing through.

13. 1 kinds of dual output oneself parameter voltage stabilizators, for a band gap reference circuit, is characterized in that, include:

One self-bias transduction operational amplifier, the area difference that is used for inputting right bipolarity junction transistor by one produces one first positive temperature coefficient (PTC) electric current and gives this input to carrying out bias voltage, and produces a positive temperature coefficient (PTC) and control voltage and negative temperature coefficient control voltage; And

One feedback voltage amplifier, is used for amplifying this negative temperature coefficient and controls voltage, and export a reference voltage to this input to feedbacking, to produce one first negative temperature parameter current.

14. dual output oneself parameter voltage stabilizators as claimed in claim 13, is characterized in that, this self-bias transduction operational amplifier includes:

One first bipolarity junction transistor, includes an emitter-base bandgap grading, a base stage and a collector, and this emitter-base bandgap grading is coupled to a ground end;

One second bipolarity junction transistor, its area is a specific factor of this first bipolarity junction transistor, to form this input right with this first bipolarity junction transistor, includes an emitter-base bandgap grading, a base stage and a collector, and this base stage is coupled to this base stage of this first bipolarity junction transistor; And

One second resistance, its one end is coupled to this emitter-base bandgap grading of this second bipolarity junction transistor, and the other end is coupled to this ground end;

Wherein, this first positive temperature coefficient (PTC) electric current this second resistance of flowing through.

15. dual output oneself parameter voltage stabilizators as claimed in claim 14, is characterized in that, this self-bias transduction operational amplifier also includes:

One first current mirror, includes:

One the first transistor, includes a gate, a drain and one source pole, and this gate is coupled to this drain, and this drain is coupled to this collector of this first bipolarity junction transistor; And

One transistor seconds, includes a gate, a drain and one source pole, and this gate is coupled to this gate of this first transistor, and this drain is coupled to this collector of this second bipolarity junction transistor.

16. dual output oneself parameter voltage stabilizators as claimed in claim 14, it is characterized in that, one source gate voltage of this first transistor is poor is that this positive temperature coefficient (PTC) is controlled voltage, and this self-bias transduction system voltage for operational amplifier is this negative temperature coefficient control voltage with the difference of an output voltage.

17. dual output oneself parameter voltage stabilizators as claimed in claim 14, is characterized in that, this self-bias transduction operational amplifier has a folding concatenation type framework.

18. dual output oneself parameter voltage stabilizators as claimed in claim 13, is characterized in that, this feedback voltage amplifier includes:

One the 3rd transistor, includes a gate, a drain and one source pole, and this gate is used for receiving this negative temperature coefficient and controls voltage; And

One the 3rd resistance, its one end is coupled to the 3rd transistorized this drain, and the other end is coupled to a ground end;

Wherein, this end of the 3rd transistorized this drain and the 3rd resistance be coupled to this input to and export this reference voltage to give this input right, this first negative temperature parameter current the 3rd resistance of flowing through.

19. dual output oneself parameter voltage stabilizators as claimed in claim 13, is characterized in that, this feedback voltage amplifier includes:

One second current mirror, includes:

One the 4th transistor, includes a gate, a drain and one source pole, and this gate is coupled to this drain; And

One the 5th transistor, includes a gate, a drain and one source pole, and this gate is coupled to the 4th transistorized this gate;

One the 6th transistor, includes a gate, a drain and one source pole, and this gate is used for receiving this negative temperature coefficient and controls voltage, and this drain is coupled to the 4th transistorized this drain, and this source electrode is coupled to a ground end; And

One the 4th resistance, its one end is coupled to the 5th transistorized this drain, and the other end is coupled to this ground end;

Wherein, this end of the 5th transistorized this drain and the 3rd resistance be coupled to this input to and export this reference voltage to give this input right, this first negative temperature parameter current the 4th resistance of flowing through.

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