CN103675439B - A kind of Drive And Its Driving Method for silicon controlled rectifier (SCR) - Google Patents
A kind of Drive And Its Driving Method for silicon controlled rectifier (SCR) Download PDFInfo
- Publication number
- CN103675439B CN103675439B CN201210320839.4A CN201210320839A CN103675439B CN 103675439 B CN103675439 B CN 103675439B CN 201210320839 A CN201210320839 A CN 201210320839A CN 103675439 B CN103675439 B CN 103675439B
- Authority
- CN
- China
- Prior art keywords
- scr
- controlled rectifier
- silicon controlled
- voltage
- electric energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Rectifiers (AREA)
Abstract
The invention provides a kind of electric energy collection device of silicon controlled rectifier (SCR), including：Conductive plate, in two electrodes of the silicon controlled rectifier (SCR)；Dielectric, between each electrode and the conductive plate of the silicon controlled rectifier (SCR)；Voltage transformation module, is electrically connected with the conductive plate, for gathering and storing the electric energy from the silicon controlled rectifier (SCR)；And stable-pressure device, electrically connected with the voltage transformation module.The method that the electric energy in silicon controlled rectifier (SCR) is gathered the invention provides the drive device of the electric energy collection device with above-mentioned silicon controlled rectifier (SCR) and using above-mentioned electric energy collection device.The apparatus according to the invention and method, it is all either to produce the drive signal with ideal waveform by driver element when being worked under electrically driven (operated) pattern is still confessed by external power source driving, so as to ensure that silicon controlled rectifier (SCR) reliably triggers and thus extends its service life.
Description
Technical field
The present invention relates to silicon controlled rectifier (SCR), and more particularly to a kind of silicon controlled rectifier (SCR) drive device and its driving
Method.
Background technology
As is well known, silicon controlled rectifier (SCR) (SCR) is a kind of conventional electronic cutting in high pressure and high current control field
Close.Silicon controlled rectifier (SCR) is a kind of three terminal device, including anode, negative electrode and grid.Different from ordinary tap device, controllable silicon is whole
The conducting of stream device is controlled by its signal, and its cut-off is not controlled then by signal, and only with its anode and negative electrode
Between voltage it is relevant.
Conventional silicon controlled rectifier (SCR), the profile of particularly high-power silicon-controlled rectifying device is as shown in Figure 1.As illustrated,
The silicon controlled rectifier (SCR) 1 is substantially pie structure.Up and down two layers be respectively metal polar plate constitute anode and negative electrode wiring
Terminal.Centre is wavy ceramic material, for increasing creep age distance.There is a binding post in the middle of ceramic material, for control
Pole processed, i.e. gate terminal.Because the electric current and caloric value of high-power silicon-controlled rectifying device 1 are all very big, so its terminal and copper bar
Between contact resistance must be small as far as possible, and have good heat dissipation design.Therefore, conventional silicon controlled rectifier (SCR) 1 exists
Connected mode in work is as shown in Figure 2.Specifically, referring to Fig. 2, with two pieces of massive copper coins, preferably rectangle copper plate
Silicon controlled rectifier (SCR) 1 is firmly pressed against centre, so on the one hand can increase contact area and reduce contact resistance, it is another
Aspect can also reduce thermal resistance as much as possible, reach good radiating effect.
Fig. 3 is referred to, Fig. 3 shows the topological schematic diagram of the raster data model of silicon controlled rectifier (SCR).As shown in the drawing, it is used for
Driving the circuit of silicon controlled rectifier (SCR) includes control unit 2 and driver element 3.Wherein control unit 2 generation be usually 3.3V or
Person 5V control signal, and send it to driver element 3.And driver element 3 by external power source zoomed into about+
15V signal drives the grid of silicon controlled rectifier (SCR) 1 to produce enough electric currents, so that silicon controlled rectifier (SCR) 1 is turned on.
In actual applications, when silicon controlled rectifier (SCR) 1 is not yet turned on, the alternating voltage between its negative electrode and anode two ends
Up to several kilovolts.Therefore, typically between silicon controlled rectifier (SCR) 1 and driver element 3 and driver element 3 and control unit 2
Between be required for being isolated.At present, isolated between silicon controlled rectifier (SCR) and driver element with pulse transformer, driven
Then isolated between moving cell 3 and control unit 2 using optical fiber.And driver element 3 is passed through by civil power respectively with control unit 2
AC/DC insulating power supplies are powered, and so resulting in needs the link isolated a lot, designs relatively difficult.
Topological schematic diagram as shown in Figure 3 illustrate only preferable driving situation.But it is due to that silicon controlled rectifier (SCR) is normal
Often it is operated among some high-voltage applications environment, among the field of such as power transmission and electric power distribution, it is therefore desirable to which ensuring can
Control the high stability of silicon rectifier work.Thus need to occur in some special circumstances, such as when control unit is damaged either
When driver element is powered off, still to ensure can when the anode of silicon controlled rectifier (SCR) and the voltage at negative electrode two ends exceed predetermined value
Turn on silicon controlled rectifier (SCR).Therefore, except it is conventional by external power source drive pattern in addition to, in addition it is also necessary to it is extra without outside
Power drives pattern is to meet in the above-mentioned normal work in particular cases still ensuring that silicon controlled rectifier (SCR).
Fig. 4 shows the circuit diagram of the conventional drive device for silicon controlled rectifier (SCR).As shown in figure 4, the driving is filled
Put including two parts.Constituted in the part in the left side of silicon controlled rectifier (SCR) 1 by external power source drive part, wherein using arteries and veins
Rush the drive signal that transformer generates driver element 3 and be coupled to high-pressure side from low-pressure side.Because drive signal is single from driving
The generation of member 3, therefore the drive signal of its generation has preferable waveform.The part on the right side of silicon controlled rectifier (SCR) 1 constitutes nothing
External power source drive part, including breakdown diode D1, D2, resistance R1 and electric capacity C, annexation are as shown in Figure 4.Its work is former
Reason is, no matter the whether upper electricity of driver element, when the anode of silicon controlled rectifier (SCR) 1 and the voltage at negative electrode two ends exceed predetermined value,
Breakdown diode D1 will be turned on and be generated driving current.
Although the conventional drive device for silicon controlled rectifier (SCR) can provide one kind without external power source drive pattern
Solution, but it remains some problems.Believe in actual applications for the raster data model of silicon controlled rectifier (SCR)
Number have very strict requirement.Reason is, if the waveform of drive signal is undesirable, and heavy then wrong signal can be damaged can
Control silicon rectifier gently can then increase switching loss so as to reduce its working life.And above-mentioned conventional drive device without outside
Electric power driving module can not produce preferable waveform, because the electric current for flowing into the grid of silicon controlled rectifier (SCR) can be by anode and the moon
The voltage at pole two ends changes, uncontrolled.The electric current that the grid of control silicon rectifier is flowed into without external power source drive module may mistake
Greatly, the gate terminal of silicon controlled rectifier (SCR) is damaged.In addition, preferable drive signal can not be produced without external power source drive module
Required complicated waveform.In addition, in Fig. 4 embodiments without external power source drive module due to often producing moment
Trigger pulse, it is easy to burn out silicon controlled rectifier (SCR).
In addition, the ability in order to strengthen isolation, plays the pulse of buffer action between driver element and silicon controlled rectifier (SCR)
The primary coil of transformer is away from its secondary coil, and the size of the magnetic rings thus wherein used will cause whole driving dress
Put change greatly and aggravate.In addition, the intrinsic hysteresis characteristic that magnetic rings have can also cause the drive signal by it
Can occur distortion.
The content of the invention
In order to solve at least one above-mentioned technical problem present in prior art, the invention provides a kind of controllable silicon is whole
The electric energy collection device of device is flowed, including：Conductive plate, a kind of silicon controlled rectifier (SCR) electric energy collection device, including：Voltage obtains single
Member, it includes the first conductive plate, the second conductive plate and dielectric, first conductive plate respectively with the silicon controlled rectifier
Anode and the negative electrode electrical connection of device, second conductive plate is located between the anode of the silicon controlled rectifier (SCR) and negative electrode, described
Dielectric is located between first conductive plate and the second conductive plate；Voltage transformation module, with first conductive plate and
Two conductive plates are electrically connected, and the alternating voltage for the voltage acquisition unit to be obtained is transformed to galvanic current pressure.
The invention provides a kind of drive device of silicon controlled rectifier (SCR), including：Driver element, for the controllable silicon
The grid of rectifier provides drive signal；And above-mentioned silicon controlled rectifier (SCR) electric energy collection device, at least in external electrical
Source provides electric energy in the case of powering off for the driver element.
According to above-described embodiment, the electric energy gathered using the anode from the silicon controlled rectifier (SCR) and negative electrode is come to the drive
The one of which embodiment that moving cell is powered is the present inventor from during the work of existing silicon controlled rectifier (SCR)
It is uniform that ac high voltage on the anode used and two pieces of copper coins of negative electrode two ends connection is formed between this two pieces of copper coins
Alternating electric field expect., to drive circuitry, driving power supply can be thus solved using electric energy is obtained from the electric field
External power source power-off when drive circuit powerup issue.And this mode is realized and is also relatively easy to, it can greatly reduce
Cost.
According to one embodiment of present invention, between described control unit and the driver element by optical fiber carry out every
From, and the silicon controlled rectifier (SCR) electric energy collection device also includes an energy-storage units, and it is used to store the voltage transformation list
The electric energy of member output, to cause only by the silicon controlled rectifier (SCR) electric energy collection device with regard to the electricity of the driver element can be met
It can supply, and thus need not be isolated between the driver element and the silicon controlled rectifier (SCR).Due to from controllable silicon
Rectifier anode and negative electrode two ends collection electric energy can just be powered to driver element, therefore driver element ground potential will with it is controllable
The negative electrode or anode of silicon rectifier are consistent, thus can cancel in design between driver element and controllable silicon every
From, and only retain the Fiber isolation between driver element and control unit.In this manner it is possible to solve drive conventional in the prior art
The problems such as large scale, high cost and distorted signals that pulse transformer in dynamic device is brought.
The explanation carried out with reference to accompanying drawing, other objects of the present invention and effect will become apparent and more
Plus should be readily appreciated that.
Brief description of the drawings
Introduce below in conjunction with embodiment and more specifically referring to the drawings and explain the present invention, in the accompanying drawings：
Fig. 1 is the structural representation of the gate terminal of silicon controlled rectifier (SCR)；
Fig. 2 is the negative electrode of silicon controlled rectifier (SCR), anode terminal connection diagram；
Fig. 3 is the topological schematic diagram of the raster data model of silicon controlled rectifier (SCR)；
Fig. 4 is the circuit diagram of the conventional drive device for silicon controlled rectifier (SCR)；
Fig. 5 is electric field power taking schematic diagram according to an embodiment of the invention；
Fig. 6 is the circuit diagram of silicon controlled rectifier (SCR) electric energy collection device according to an embodiment of the invention；And
Fig. 7 is the discharge and recharge moment schematic diagram of the silicon controlled rectifier (SCR) electric energy collection device shown in Fig. 6.
Identical reference represents similar or corresponding feature and/or function in the accompanying drawings.
Embodiment
Embodiments of the invention are more specifically described hereinafter with reference to the accompanying drawings.
As described above, in order to solve can not be produced without external power source drive part such as Fig. 4 conventional drive devices shown
The problem of preferable waveform, the present invention proposes that a kind of new drive device utilizes what is gathered from silicon controlled rectifier (SCR) anode and negative electrode
Electric energy is powered to the driver element, so that either still confessing electrically driven (operated) pattern by external power source driving
All it is that the drive signal with ideal waveform is produced by driver element during lower work, so as to ensure that silicon controlled rectifier (SCR) is reliably touched
Send out and thus extend its service life.
According to the present invention, a kind of embodiment from silicon controlled rectifier (SCR) anode and the electric energy of negative electrode collection, inventor are used as
Will be between two plates in view of when silicon controlled rectifier (SCR) is not yet turned on, acting on the ac high voltage on two pieces of rectangle copper plates
Form a uniform alternating electric field.It therefore, it can obtain electric energy from the electric field to power to driver element.
Specifically, Fig. 5 is electric field power taking schematic diagram according to an embodiment of the invention.As shown in figure 5, according to the present invention
The drive device of embodiment may include driver element 3, for providing drive signal to the grid G of silicon controlled rectifier (SCR)；Voltage
Acquiring unit, it includes the first conductive plate (figure Anodic or cathode plate), the second conductive plate 51 and dielectric 52, first
Conductive plate is electrically connected with an electrode of silicon controlled rectifier (SCR), the second conductive plate 51 be located at silicon controlled rectifier (SCR) two electrodes it
Between, dielectric 52 is located between first conductive plate and the second conductive plate 51；And voltage transformation module 53, led with first
Electroplax and the second conductive plate 51 are electrically connected, and the alternating voltage for voltage acquisition unit to be obtained is transformed to galvanic current
Pressure.
Wherein, electric energy collection device can be between cut-off state and controllable silicon negative and positive the two poles of the earth in silicon controlled rectifier (SCR) 1
When there is high voltage, electric energy is gathered from the anode and negative electrode of silicon controlled rectifier (SCR) 1, so that in the case of outside power cut-off,
Driver element 3 is powered and drive signal is generated by driver element 3.
When silicon controlled rectifier (SCR) 1 ends, voltage acquisition unit is between the anode and negative electrode of the silicon controlled rectifier (SCR) 1
The ac induction voltage of voltage acquisition one.In one embodiment, structure as shown in Figure 2 is utilized, it is contemplated that silicon controlled rectifier
The anode and negative electrode both end voltage of device 1 are higher, it is impossible to directly in terminal voltage power taking.Therefore, embodiments in accordance with the present invention, by one
In block conductive plate 51, such as sheet metal or metal foil, preferably rectangular copper foil, insertion electric field.In addition, in copper foil and two ends copper
The dielectric of high-k is filled between plate.Under uniform alternating electric effect, electric charge will be induced on copper foil.Regularly
Collect these electric charges, it is possible to for being powered for driver element.
Specifically, because this two pieces of copper coins at negative electrode and anode two ends are very big and parallel to each other, thus when controllable silicon is whole
Stream device 1 will generate uniform electric field E when being in cut-off state between this two pieces of copper coins：
Wherein, Vs is consequently exerted at the alternating voltage between the two poles of the earth of silicon controlled rectifier (SCR) 1, and unit is volt,
And d1,d2For the spacing of conductive plate 51 respectively between anode plate and cathode plate, unit is rice.
When the copper foil is inserted into appropriate position between above-mentioned uniform electric field, copper foil and cathode plate it
Between will produce the voltage of sensing, induced voltage UiWill be proportional to AC power supplies Vs：
Wherein, Vs is consequently exerted at the alternating voltage between the two poles of the earth of silicon controlled rectifier (SCR) 1, unit
For volt, and d1,d2For the spacing of conductive plate 51 respectively between anode plate and cathode plate, unit is rice.
By adjusting copper foil along the location of direction of an electric field, negative electrode (Fig. 5 of copper foil and silicon controlled rectifier (SCR) can be adjusted
Middle lower surface) between voltage swing to the acceptable scope of voltage transformation module 53, consequently facilitating collecting electric energy.Because
Said structure forms two plate condensers connected actually between positive plate and copper foil between copper foil and minus plate,
Its capacitance is determined by following formula：
Wherein, ε0For the dielectric constant in vacuum, εrFor the relative dielectric constant of dielectric 52, S is polar plate area, d1,
d2For pole plate spacing.
Because d1＞ d2, so capacitance C1＜ C2.For series capacitance group, voltage is inversely proportional with electric capacity.Therefore,
If position, the voltage u between copper foil and minus plate as shown in Figure 52Less than its voltage u between positive plate1, i.e. u1＞ u2。
Thus serve the effect of the size of the voltage of control collection.Although it is worth noting that, collection conductive plate is shown in Fig. 5
Electric energy between minus plate, the electric energy between conductive plate and positive plate can also be gathered by above-mentioned device.
Next, the ac induction voltage that voltage acquisition unit is gathered is transformed to stable DC by voltage transformation module 53
Voltage VDC, to be powered to driver element 3.
Next, the electric energy that silicon controlled rectifier (SCR) 1 according to an embodiment of the invention is introduced with reference to Fig. 6 and Fig. 7 is adopted
The operation principle of acquisition means.Wherein, Fig. 6 is the electricity of silicon controlled rectifier (SCR) electric energy collection device according to an embodiment of the invention
Lu Tu, and Fig. 7 is the discharge and recharge moment schematic diagram of the silicon controlled rectifier (SCR) electric energy collection device shown in Fig. 6.
Voltage transformation module 53 may include rectification circuit unit, circuit of reversed excitation unit and voltage regulation unit.Voltage transformation list
It is straight to obtain a pulsation that the ac induction voltage that member 53 is gathered voltage acquisition unit carries out rectification by rectification circuit unit
Voltage is flowed, the electrical power storage that circuit of reversed excitation unit exports rectification circuit unit simultaneously passes to mu balanced circuit, and mu balanced circuit is then
Resulting pulsating dc voltage is transformed to a stable DC voltage VDC.
Equivalent capacity C1 and C2 in Fig. 6 as described above, represent between positive plate and copper foil and copper foil and minus plate respectively
Between form two series connection plate condenser electric capacity.First, when voltage transformation module 53 works, rectifier (this reality
Apply in example is half-wave diode rectification circuit) by the exchange terminal voltage rectification of silicon controlled rectifier (SCR) 1 it is DC pulse moving voltage.Work as electricity
When pressure is higher than BOD (Breaking-over Diode) threshold voltage Uth, BOD is open-minded, so that Q1 is open-minded, product on equivalent capacity C2
Tired electric charge is discharged by transformer T1 primary side, is stored energy in T1.When the voltage is less than BOD threshold voltage Uth
When, BOD shut-offs, so that Q1 is turned off, the energy stored in T1 is charged by secondary coil by diode D1 to capacitor C3.Together
When, restart stored charge on equivalent capacity C2.It is to work as in the dash area of the SCR terminal voltages shown in Fig. 7 with reference to Fig. 7
When voltage is higher than BOD (Breaking-over Diode) threshold voltage Uth, now, C2 charges to T1；In non-shaded portion, i.e.,
When the voltage is less than BOD threshold voltage Uth, now, T1 charges to C3.Repeat above-mentioned action, then can be by electric field energy
Amount is constantly transferred on C3, then by stable-pressure device 54, is used for driver element 3.According to above-described embodiment, as long as controllable silicon
The maximum of the terminal voltage of rectifier 1 can exceed that default BOD threshold voltages, then the voltage transformation module 53 can be constantly from electricity
Field power taking supply driver element 3 is used.It is worth noting that, the present invention is not restricted to above-described embodiment.People in the art
Member can be according to above-mentioned thought with other circuit design electric energy collection devices.
According to one embodiment of present invention, control unit 2, can be adopted between driver element 3 and silicon controlled rectifier (SCR) 1
Connected with usual manner.That is, isolated between control unit 2 and driver element 3 by optical fiber, and driver element 3 and controllable
Isolated between silicon rectifier 1 by pulse transformer 4.
But as it was previously stated, carrying out isolation using pulse transformer 4 has many drawbacks, such as volume is big, and cost is high simultaneously
And signal might have distortion.Therefore, if certain long-term accumulator (such as battery or ultracapacitor) can be coordinated to receive
The electric field energy collected is stored, then can save the externally fed of driver element 3, so as to simplify isolation design, is only retained
Control unit 2 to driver element 3 isolation optical fiber.
Thus, according to another embodiment of the invention, silicon controlled rectifier (SCR) electric energy collection device may also include an energy storage
Unit (not shown).Energy-storage units use battery or ultracapacitor, and it is used for the electric energy for storing collecting unit collection, so that
Obtain and only supplied by the electric energy collection device of silicon controlled rectifier (SCR) 1 with regard to the electric energy of driver element 3 can be met.Due to whole from controllable silicon
Stream the anode of device 1 and negative electrode two ends collection electric energy can just be powered to driver element 3, therefore driver element 3 ground potential will with can
The negative electrode or anode for controlling silicon rectifier 1 are consistent, so as to can cancel driver element 3 and silicon controlled rectifier (SCR) in design
Isolation between 1, and only retain the Fiber isolation between driver element 3 and control unit 2.Prior art can thus be solved
The problems such as large scale, high cost and distorted signals that pulse transformer in middle conventional drive device is brought.
Described above in association with accompanying drawing according to silicon controlled rectifier (SCR) electric energy acquisition included in inventive drive means
Device.Although not shown in figure, it should be understood by those skilled in the art that above-mentioned drive device should also be standby including one
With driving trigger element.Standby driving trigger element is then for the voltage between the anode and negative electrode of silicon controlled rectifier (SCR) 1
During more than predetermined value, that is, the driver element 3 is triggered when meeting trigger condition makes it be carried to the grid of the silicon controlled rectifier (SCR) 1
For drive signal, so that the silicon controlled rectifier (SCR) 1 is turned on.
According to one embodiment of present invention, standby driving trigger element can include a judging unit and an output
Unit.Whether the voltage that wherein judging unit is used to judge between the anode of silicon controlled rectifier (SCR) and negative electrode exceedes predetermined value, and
The voltage that output unit is then used between the anode and negative electrode of silicon controlled rectifier (SCR) is exported when exceeding predetermined value to driver element
One trigger signal.So, driver element 3 just provides driving according to the trigger signal to the grid of the silicon controlled rectifier (SCR) 1
Signal is so that silicon controlled rectifier (SCR) 1 is turned on.Thus, in the case where that can not be worked by external power source type of drive, according to this
The confession electric drive mode of invention remains able to ensure that silicon controlled rectifier (SCR) 1 can be driven and be led in the case where needing to turn on
It is logical, so as to ensure the safe handling of silicon controlled rectifier (SCR) 1 in particular circumstances.In other words, the nothing of common silicon controlled rectifier (SCR) 1
The trigger pulse that source triggering over-voltage protecting function is produced is in irregular shape, is easily damaged silicon controlled rectifier (SCR) 1.And use according to this
The drive device of invention, trigger pulse is unified to be produced from driver element, so as to ensure the reliably triggering of silicon controlled rectifier (SCR) 1, extension
Its service life.
It will be appreciated by those skilled in the art that the present invention is only preferably said with above-described embodiment
It is bright.On the basis of teachings of the present invention thought is not departed from, those skilled in the art should be it is conceivable that various other change
Form.For example, the circuit diagram of the electric energy collection device of silicon controlled rectifier (SCR) shown in Fig. 6 is one embodiment, the present invention is simultaneously
The electric energy collection device of such a silicon controlled rectifier (SCR) is not limited only to, it is every to realize the object of the invention, i.e., from silicon controlled rectifier (SCR)
Anode and negative electrode generation uniform alternating electric in gather out the electric energy of the silicon controlled rectifier (SCR) that can be supplied to driver element electric energy
Harvester is within the scope of protection of the invention.In addition, the sheet metal or metal foil employed in embodiment are preferred
For rectangular copper foil, but the metal foil that can also be formed by other appropriate metals.In addition, in embodiment, standby driving is touched
To driving when voltage of the output unit that bill member includes between the anode and negative electrode of silicon controlled rectifier (SCR) is more than predetermined value
Unit exports a trigger signal.But those skilled in the art should be also it is conceivable that output unit can also be triggered without output
The mode of signal is triggered to driver element.
It should be noted that above-described embodiment signal is not intended to limit the present invention and those skilled in the art are not departing from appended power
Various alternate embodiments should can be designed in the case of sharp claimed range.In detail in the claims, should not be by bracket
Any reference be understood as being limitations on claims.Word " comprising " is not precluded from the presence of claim or specification
In the element or step do not enumerated.Word "a" or "an" before element is not precluded from the presence of multiple this elements.
In the system claims for listing several units, several in these elements can be by same class software and/or hardware be Lai real
Apply.Any ordinal relation is not offered as using word " first ", " second " and " the 3rd " etc..These Word Understandings should be become famous
Claim.
Claims (9)
1. a kind of silicon controlled rectifier (SCR) electric energy collection device, including：
Voltage acquisition unit, it includes the second conductive plate and dielectric, the anode of the silicon controlled rectifier (SCR) and an anode
Copper coin is electrically connected, and the negative electrode of the silicon controlled rectifier (SCR) is electrically connected with a cathode plate, and the silicon controlled rectifier (SCR) is in cut-off
An electric field can be generated during state between the anode copper coin and the cathode plate, second conductive plate is located at the anode copper
Between plate and the cathode plate, between second conductive plate and the anode copper coin and second conductive plate and described the moon
The dielectric is filled between the copper coin of pole；
Voltage transformation module, is electrically connected with the cathode plate and second conductive plate, for by the alternating voltage collected
It is transformed to galvanic current pressure.
2. silicon controlled rectifier (SCR) electric energy collection device as claimed in claim 1, wherein, the voltage transformation module is further wrapped
Include：
Rectification circuit unit, for the alternating voltage to be transformed into pulsating dc voltage；
Circuit of reversed excitation unit, for the electrical power storage for exporting the rectification circuit unit and passes to voltage regulation unit；
Voltage regulation unit, for the pulsating dc voltage to be transformed into stable DC voltage.
3. silicon controlled rectifier (SCR) electric energy collection device as claimed in claim 2, wherein,
The voltage transformation module further comprises on-off circuit, for when between the anode and negative electrode of the silicon controlled rectifier (SCR)
Voltage turn on the rectification circuit unit when exceeding predetermined value.
4. silicon controlled rectifier (SCR) electric energy collection device as claimed in claim 1, it is characterised in that further comprise energy storage list
Member, the electric energy for storing the voltage transformation module output.
5. silicon controlled rectifier (SCR) electric energy collection device as claimed in claim 1, it is characterised in that what voltage acquisition unit was obtained
Distance and second conductive plate and the tough cathode of the ac voltage between second conductive plate and the anode copper coin
Distance between plate, and/or the relative dielectric constant of dielectric are adjusted.
6. a kind of drive device of silicon controlled rectifier (SCR), including：
Driver element, for providing drive signal to the grid of the silicon controlled rectifier (SCR)；
Silicon controlled rectifier (SCR) electric energy collection device as described in claim 1-5 any one, for disconnected at least in external power source
In the case of electricity electric energy is provided for the driver element.
7. the drive device of silicon controlled rectifier (SCR) as claimed in claim 6, further comprises：
Standby driving trigger element, for exceeding predetermined value when the voltage between the anode and negative electrode of the silicon controlled rectifier (SCR)
When, triggering the driver element makes it provide drive signal to the grid of the silicon controlled rectifier (SCR).
8. the drive device of silicon controlled rectifier (SCR) as claimed in claim 7, further comprises：
The standby driving trigger element provides electric energy by the electric energy collection device.
9. the drive device of silicon controlled rectifier (SCR) as claimed in claim 6, it is characterised in that
Electric energy needed for the driver element is all supplied by the electric energy collection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210320839.4A CN103675439B (en) | 2012-08-31 | 2012-08-31 | A kind of Drive And Its Driving Method for silicon controlled rectifier (SCR) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210320839.4A CN103675439B (en) | 2012-08-31 | 2012-08-31 | A kind of Drive And Its Driving Method for silicon controlled rectifier (SCR) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103675439A CN103675439A (en) | 2014-03-26 |
| CN103675439B true CN103675439B (en) | 2017-08-04 |
Family
ID=50313603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210320839.4A Active CN103675439B (en) | 2012-08-31 | 2012-08-31 | A kind of Drive And Its Driving Method for silicon controlled rectifier (SCR) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103675439B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323931B (en) * | 2019-08-15 | 2024-05-10 | 荣信汇科电气股份有限公司 | Redundant trigger circuit containing state feedback function |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5028825A (en) * | 1989-10-18 | 1991-07-02 | International Business Machines Corporation | Self-powered SCR gate drive circuit with optical isolation |
| US5796599A (en) * | 1997-03-12 | 1998-08-18 | Reliance Electric Industrial Company | Self-powered gate driver board |
| CN1956303A (en) * | 2005-09-28 | 2007-05-02 | 洛克威尔自动控制技术股份有限公司 | Self powered gate driver system |
| CN201286085Y (en) * | 2008-10-14 | 2009-08-05 | 哈尔滨九洲电气股份有限公司 | SCR self power supply gate triggering board |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6552598B2 (en) * | 2001-07-20 | 2003-04-22 | Vitaly Gelman | Semiconductor high voltage electrical energy transmission switching system and method |
-
2012
- 2012-08-31 CN CN201210320839.4A patent/CN103675439B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5028825A (en) * | 1989-10-18 | 1991-07-02 | International Business Machines Corporation | Self-powered SCR gate drive circuit with optical isolation |
| US5796599A (en) * | 1997-03-12 | 1998-08-18 | Reliance Electric Industrial Company | Self-powered gate driver board |
| CN1956303A (en) * | 2005-09-28 | 2007-05-02 | 洛克威尔自动控制技术股份有限公司 | Self powered gate driver system |
| CN201286085Y (en) * | 2008-10-14 | 2009-08-05 | 哈尔滨九洲电气股份有限公司 | SCR self power supply gate triggering board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103675439A (en) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101697430B (en) | Power control method based CT electricity getting device of high voltage transmission line | |
| CN105119391B (en) | A kind of efficient electric energy transmitting terminal and wireless electric energy transmission device | |
| CN101882879B (en) | Circuit converting constant current source to constant voltage source and light using same | |
| CN102201666B (en) | Control circuit and use the electric machine of this control circuit | |
| CN105099234B (en) | Magnetic field energy collecting device | |
| CN103872787B (en) | A kind of novel high-pressure side induction power taking supply unit | |
| CN206908518U (en) | Superposing type electric field induction electricity getting device | |
| CN112886718B (en) | Resonance compensation type current transformer induction power taking system | |
| CN101471608A (en) | Switch power supply circuit | |
| CN105453369A (en) | Wireless power transfer via variable coupling capacitance | |
| CN201766754U (en) | Non-isolated type LED driving power supply having protection function | |
| CN107749672A (en) | Collection system for energy conversion | |
| CN103675439B (en) | A kind of Drive And Its Driving Method for silicon controlled rectifier (SCR) | |
| CN101658074A (en) | Circuit configuration for operating at least one discharge lamp and method for generating an auxiliary voltage | |
| CN202587486U (en) | LED drive chip and circuit with power compensation | |
| CN105917550B (en) | Apparatus for storing electrical energy with balanced-unbalanced transformer | |
| CN102810986A (en) | Series topological light-emitting diode (LED) switching power circuit | |
| CN102270940A (en) | Electric field induction type power supplying method used for electric power monitoring device | |
| CN202334336U (en) | Active electronic type transformer power supply | |
| CN101257258B (en) | Switch power circuit | |
| CN201985770U (en) | Electronic servo transformer and servo/frequency conversion system | |
| CN211127264U (en) | USB intelligent quick charging circuit | |
| CN102209424B (en) | High-reliability electronic ballast for fluorescent lamp | |
| CN100574077C (en) | Power circuit | |
| CN219287193U (en) | Single-phase energy storage circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |