CN103675439A - Drive device and drive method used for silicon controlled rectifier - Google Patents
Drive device and drive method used for silicon controlled rectifier Download PDFInfo
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- CN103675439A CN103675439A CN201210320839.4A CN201210320839A CN103675439A CN 103675439 A CN103675439 A CN 103675439A CN 201210320839 A CN201210320839 A CN 201210320839A CN 103675439 A CN103675439 A CN 103675439A
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Abstract
The invention provides an electric energy collection device for a silicon controlled rectifier. The electric energy collection device comprises a current carrying plate located between two electrodes of the silicon controlled rectifier, insulating mediums located between the electrodes of the silicon controlled rectifier and the current carrying plate, a voltage change unit electrically connected with the current carrying plate and used for collecting and storing the electric energy from the silicon controlled rectifier, and a voltage stabilizer electrically connected with the voltage change unit. The invention provides a drive device provided with the electric energy collection device for the silicon controlled rectifier and a method for collecting the electric energy from the silicon controlled rectifier by using the electric energy collection device. According to the device and the method provided by the invention, a drive unit generates a drive signal with an ideal wave form whether the device works under an external power drive mode or a self-powered drive mode, so that the silicon controlled rectifier is guaranteed to be reliably triggered, and therefore, the service life of the device is prolonged.
Description
Technical field
The present invention relates to silicon controlled rectifier, and relate in particular to a kind of Drive And Its Driving Method of silicon controlled rectifier.
Background technology
Many weeks, in high pressure and large Current Control field, silicon controlled rectifier (SCR) is a kind of conventional electronic switch.Silicon controlled rectifier is a kind of three terminal device, comprises anode, negative electrode and grid.Different from ordinary tap device, the conducting of silicon controlled rectifier is subject to the control of its signal, and its cut-off is not subject to the control of signal, and only with its anode and negative electrode between voltage relevant.
Conventional silicon controlled rectifier, the particularly profile of high-power silicon-controlled rectifying device are as shown in Figure 1.As shown in the figure, this silicon controlled rectifier 1 is essentially pie structure.The upper and lower two-layer anode of metal polar plate formation and the connection terminal of negative electrode of being respectively.Centre is wavy stupalith, for strengthening creepage distance.In the middle of stupalith, there is a connection terminal, for controlling the utmost point, i.e. gate terminal.Because electric current and the thermal value of high-power silicon-controlled rectifying device 1 are all very large, so the contact resistance between its terminal and copper bar must be as much as possible little, and there is good heat dissipation design.Therefore, conventional silicon controlled rectifier 1 connected mode at work as shown in Figure 2.Particularly, referring to Fig. 2, with two massive copper coins, in the middle of preferably rectangle copper plate is pressed in silicon controlled rectifier 1 firmly, so on the one hand can enlarge active surface and reduce contact resistance, also can reduce as much as possible thermal resistance on the other hand, reach good radiating effect.
Refer to Fig. 3, Fig. 3 shows the topological schematic diagram of the grid driving of silicon controlled rectifier.As shown in the drawing, for driving the circuit of silicon controlled rectifier to comprise control module 2 and driver element 3.Wherein control module 2 generates and is generally the control signal of 3.3V or 5V, and sends it to driver element 3.And driver element 3 is zoomed into the signal of approximately+15V by external power source, to produce enough electric currents, drive the grid of silicon controlled rectifier 1, thereby make silicon controlled rectifier 1 conducting.
In actual applications, when silicon controlled rectifier 1 is not yet during conducting, the alternating voltage between its negative electrode and anode two ends can reach several kilovolts.Therefore, generally between silicon controlled rectifier 1 and driver element 3 and between driver element 3 and control module 2, all needing to isolate.At present, between silicon controlled rectifier and driver element, with pulse transformer, isolate, between driver element 3 and control module 2, adopt optical fiber to isolate.And driver element 3 is powered through AC/DC insulating power supply by civil power respectively with control module 2, so just cause and need the link of isolation a lot, design is got up more difficult.
Topological schematic diagram as shown in Figure 3 only shows desirable driving situation.But because silicon controlled rectifier is usually operated in the middle of some high-voltage applications environment, in the middle of the field such as electric power transfer and distributing electric power, therefore need to guarantee the high stability of silicon controlled rectifier work.Thereby need to occur in some special circumstances, for example, when control module damages or during driver element power-off, still to guarantee can make silicon controlled rectifier conducting at the anode of silicon controlled rectifier and the voltage at negative electrode two ends during over predetermined value.Therefore, except routine by external power source drive pattern, also need extra without external power source drive pattern to meet the normal work that in particular cases still guarantees silicon controlled rectifier above-mentioned.
Fig. 4 shows the circuit diagram of the conventional drive unit for silicon controlled rectifier.As shown in Figure 4, this drive unit comprises two parts.Part in silicon controlled rectifier 1 left side has formed by external power source drive part, and the driving signal that wherein adopts pulse transformer that driver element 3 is generated is coupled to high-pressure side from low-pressure side.Owing to driving signal to generate from driver element 3, so the driving signal of its generation has desirable waveform.The part on silicon controlled rectifier 1 right side has formed without external power source drive part, comprises breakdown diode D1, D2, resistance R 1 and capacitor C, and annexation as shown in Figure 4.Its principle of work is, no matter whether driver element powers on, and when the anode of silicon controlled rectifier 1 and the voltage at negative electrode two ends surpass predetermined value, breakdown diode D1 is by conducting and generate drive current.
Although the conventional drive unit for silicon controlled rectifier can provide a kind of solution without external power source drive pattern, it still exists some problems.Gate drive signal for silicon controlled rectifier has very strict requirement in actual applications.Reason is, if drive the waveform of signal undesirable, thereby heavy wrong signal can damage silicon controlled rectifier, reduces its mission life, gently can increase switching loss.And the drive unit of above-mentioned routine without external power source driver module, can not produce desirable waveform because flowing into the electric current of the grid of silicon controlled rectifier can be changed by the voltage at anode and negative electrode two ends, uncontrolled.The electric current that flows into the grid of control silicon rectifier without external power source driver module may be excessive, damages the gate terminal of silicon controlled rectifier.In addition without external power source driver module, can not produce, the waveform of the desirable desired complexity of driving signal.In addition, in Fig. 4 embodiment without external power source driver module owing to often producing the trigger pulse of moment, be easy to burn out silicon controlled rectifier.
In addition, in order to strengthen the ability of isolation, the primary coil that plays the pulse transformer of buffer action between driver element and silicon controlled rectifier should be away from its secondary coil, and the size of the magnetic rings wherein adopting thus will make whole drive unit become large and increase the weight of.In addition, the intrinsic hysteresis characteristic that magnetic rings has also can make, by its driving signal, distortion to occur.
Summary of the invention
In order to solve at least one the above-mentioned technical matters existing in prior art, the invention provides a kind of electric energy collection device of silicon controlled rectifier, comprise: current-carrying plate, a kind of silicon controlled rectifier electric energy collection device, comprise: voltage acquiring unit, it comprises the first current-carrying plate, the second current-carrying plate and insulating medium, described the first current-carrying plate is electrically connected to an electrode of described silicon controlled rectifier, described the second current-carrying plate is between two electrodes of described silicon controlled rectifier, and described insulating medium is between described the first current-carrying plate and the second current-carrying plate; Voltage transformation module, is electrically connected to described the first current-carrying plate and the second current-carrying plate, for the AC voltage conversion that described voltage acquiring unit is obtained, is that galvanic current is pressed.
The drive unit that the invention provides a kind of silicon controlled rectifier, comprising: driver element, provides driving signal for the grid to described silicon controlled rectifier; And above-mentioned silicon controlled rectifier electric energy collection device, in the situation of power cut-off at least externally for described driver element provides electric energy.
According to above-described embodiment, the uniform alternating electric field that utilizes from the anode of described silicon controlled rectifier and the electric energy of negative electrode collection the ac high voltage two copper coins that the anode that adopts while being the present inventor from the work of existing silicon controlled rectifier to wherein a kind of embodiment of described driver element power supply and negative electrode two ends connect to form between these two copper coins is expected.Utilization is obtained electric energy and is come to drive circuitry from this electric field, the powerup issue of driving circuit during the external power source power-off that so just can solve driving power.And this mode realizes also comparatively easy, can reduce costs widely.
According to one embodiment of present invention, between described control module and described driver element, by optical fiber, isolate, and described silicon controlled rectifier electric energy collection device also comprises an energy-storage units, it is for storing the electric energy of described change in voltage unit output, so that only just can meet the electric power supply of described driver element by described silicon controlled rectifier electric energy collection device, and between described driver element and described silicon controlled rectifier, do not need to isolate thus.Owing to just powering to driver element from the electric energy of silicon controlled rectifier anode and the collection of negative electrode two ends, therefore the earth potential of driver element is consistent the negative electrode with silicon controlled rectifier or anode, thereby can cancel the isolation between driver element and controllable silicon in design, and only retain the optical fiber isolation between driver element and control module.Like this, just can solve in prior art the problems such as the high and distorted signals of large scale, cost that the pulse transformer in conventional drive unit brings.
With reference to the explanation carried out by reference to the accompanying drawings, other objects of the present invention and effect will become more obviously and easy to understand more.
Accompanying drawing explanation
Below in conjunction with embodiment and with reference to accompanying drawing, more specifically introduce and explain the present invention, in the accompanying drawings:
Fig. 1 is the structural representation of the gate terminal of silicon controlled rectifier;
Fig. 2 is negative electrode, the anode terminal connection diagram of silicon controlled rectifier;
Fig. 3 is the topological schematic diagram that the grid of silicon controlled rectifier drives;
Fig. 4 is the circuit diagram of the drive unit for silicon controlled rectifier of routine;
Fig. 5 is electric field power taking schematic diagram according to an embodiment of the invention;
Fig. 6 is the circuit diagram of silicon controlled rectifier electric energy collection device according to an embodiment of the invention; And
Fig. 7 is the schematic diagram constantly that discharges and recharges of the silicon controlled rectifier electric energy collection device shown in Fig. 6.
Identical Reference numeral represents similar or corresponding feature and/or function in the accompanying drawings.
Embodiment
Hereinafter more specifically describe with reference to the accompanying drawings embodiments of the invention.
As mentioned above, for what solve the conventional drive unit that shows as Fig. 4, without external power source drive part, can not produce the problem of desirable waveform, the present invention proposes a kind of new drive unit utilization and comes described driver element power supply from the electric energy of silicon controlled rectifier anode and negative electrode collection, thereby making is to be all to produce the driving signal with ideal waveform by driver element driving by external power source or confessing while working under electrically driven (operated) pattern, thereby guarantees the reliable triggering of silicon controlled rectifier and extend thus its serviceable life.
According to the present invention, a kind of embodiment as the electric energy from silicon controlled rectifier anode and negative electrode collection, inventor considers at silicon controlled rectifier and not yet during conducting, acts on two ac high voltages on rectangle copper plate and will between two plates, form a uniform alternating electric field.Therefore, can from this electric field, obtain electric energy to power to driver element.
Particularly, Fig. 5 is electric field power taking schematic diagram according to an embodiment of the invention.As shown in Figure 5, drive unit can comprise driver element 3 according to an embodiment of the invention, for the grid G to silicon controlled rectifier, provides driving signal; Voltage acquiring unit, it comprises the first current-carrying plate (figure Anodic or cathode plate), the second current-carrying plate 51 and insulating medium 52, the first current-carrying plate is electrically connected to an electrode of silicon controlled rectifier, the second current-carrying plate 51 is between two electrodes of silicon controlled rectifier, and insulating medium 52 is between described the first current-carrying plate and the second current-carrying plate 51; And voltage transformation module 53, be electrically connected to the first current-carrying plate and the second current-carrying plate 51, for the AC voltage conversion that voltage acquiring unit is obtained, be that galvanic current is pressed.
Wherein, electric energy collection device can be when there is high voltage in silicon controlled rectifier 1 between cut-off state and controllable silicon negative and positive the two poles of the earth, from anode and the negative electrode of silicon controlled rectifier 1, gather electric energy, thereby externally, in the situation of power cut-off, driver element 3 is powered and generated driving signal by driver element 3.
When silicon controlled rectifier 1 cut-off, voltage acquiring unit is from anode and one ac induction voltage of the voltage acquisition between negative electrode of described silicon controlled rectifier 1.In one embodiment, utilize structure as shown in Figure 2, consider that the anode of silicon controlled rectifier 1 and negative electrode both end voltage are higher, can not be directly in terminal voltage power taking.Therefore, according to embodiments of the invention, by a current-carrying plate 51, for example sheet metal or metal forming, be preferably rectangular copper foil, inserts in electric field.In addition between Copper Foil and two ends copper coin, fill, the insulating medium of high-k.Under uniform alternate electric field action, on Copper Foil, will induce electric charge.Collect termly these electric charges, just can be used to driver element power supply.
Particularly, because these two copper coins at negative electrode and anode two ends are very large and parallel to each other, thereby between these two copper coins, will generate uniform electric field E during in cut-off state when silicon controlled rectifier 1:
When described Copper Foil being inserted between above-mentioned uniform electric field with suitable position, between Copper Foil and cathode plate, will produce the voltage of induction, this induced voltage U
iwill be proportional with AC power supplies Vs:
By regulating Copper Foil along the residing position of direction of an electric field, can regulate voltage swing between the negative electrode (lower surface in Fig. 5) of Copper Foil and silicon controlled rectifier to the acceptable scope of voltage transformation module 53, thereby be convenient to collect electric energy.This is that its capacitance is determined by following formula because in fact said structure has formed two plate condensers of connecting between positive plate and Copper Foil and between Copper Foil and minus plate:
Wherein, ε
0for the specific inductive capacity in vacuum, ε
rfor the relative dielectric constant of insulating medium 52, S is polar plate area, d
1, d
2for polar plate spacing.
Because d
1>d
2so, capacitance C
1<C
2.For series capacitance group, voltage and electric capacity are inversely proportional to.Therefore, if position, the voltage u between Copper Foil and minus plate as shown in Figure 5
2be less than the voltage u between itself and positive plate
1, i.e. u
1>u
2.So just played the big or small effect of controlling the voltage gathering.Although what it should be noted that Fig. 5 demonstration is the electric energy gathering between current-carrying plate and minus plate, the electric energy between current-carrying plate and positive plate also can gather by above-mentioned device.
Next, the ac induction voltage that change in voltage unit 53 gathers voltage acquiring unit is transformed to stable DC voltage VDC, to driver element 3 power supplies.
Next, in connection with Fig. 6 and Fig. 7, introduce the principle of work of the electric energy collection device of silicon controlled rectifier 1 according to an embodiment of the invention.Wherein, Fig. 6 is the circuit diagram of silicon controlled rectifier electric energy collection device according to an embodiment of the invention, and Fig. 7 is the schematic diagram constantly that discharges and recharges of the silicon controlled rectifier electric energy collection device shown in Fig. 6.
Change in voltage unit 53 can comprise rectification circuit unit, circuit of reversed excitation unit and voltage regulation unit.The ac induction voltage that change in voltage unit 53 gathers voltage acquiring unit carries out rectification to obtain a pulsating dc voltage by rectification circuit unit, circuit of reversed excitation unit is by the electrical power storage of rectification circuit unit output and pass to mu balanced circuit, and mu balanced circuit is transformed to resulting pulsating dc voltage one stable DC voltage VDC.
Equivalent capacity C1 in Fig. 6 and C2 as mentioned above, represent respectively between positive plate and Copper Foil and Copper Foil and minus plate between formed the electric capacity of two plate condensers of connecting.First, when 53 work of change in voltage unit, rectifier (being half-wave diode rectification circuit in the present embodiment) is DC pulse moving voltage by the interchange terminal voltage rectification of silicon controlled rectifier 1.When voltage is during higher than BOD (Breaking-over Diode) threshold voltage Uth, BOD is open-minded, thereby Q1 is open-minded, and the electric charge of the upper accumulation of equivalent capacity C2 discharges by the former limit of transformer T1, stores energy in T1.When this voltage is less than the threshold voltage Uth of BOD, BOD turn-offs, thereby Q1 turn-offs, and the energy of storing in T1 charges to capacitor C3 by diode D1 by secondary coil.Meanwhile, on equivalent capacity C2, restart stored charge.In conjunction with Fig. 7, at the dash area of the SCR terminal voltage shown in Fig. 7, be when voltage is during higher than BOD (Breaking-over Diode) threshold voltage Uth, now, C2 charges to T1; At non-shaded portion,, when this voltage is less than the threshold voltage Uth of BOD, now, T1 charges to C3.Repeat above-mentioned action, electric field energy constantly can be transferred to C3 upper, then be passed through stable-pressure device 54, for driver element 3.According to above-described embodiment, as long as the maximal value of silicon controlled rectifier 1 terminal voltage can surpass default BOD threshold voltage, driver element 3 uses can constantly be supplied with from electric field power taking in this change in voltage unit 53.It should be noted that the present invention is not restricted to above-described embodiment.Those skilled in the art can be according to other circuit design electric energy collection devices for above-mentioned thought.
According to one embodiment of present invention, control module 2, can adopt usual manner to connect between driver element 3 and silicon controlled rectifier 1.That is, between control module 2 and driver element 3, by optical fiber, isolate, and by pulse transformer 4, isolate between driver element 3 and silicon controlled rectifier 1.
For example, but as previously mentioned, adopt pulse transformer 4 to isolate and have a lot of drawbacks, volume is large, the high and signal of cost may have distortion.Therefore, if can coordinate certain long-term tank circuit (as accumulator or ultracapacitor) that the electric field energy of collecting is stored, can save the externally fed of driver element 3, thereby simplify isolation design, only retain control module 2 to the isolation optical fiber of driver element 3.
Thus, according to another embodiment of the invention, silicon controlled rectifier electric energy collection device also can comprise an energy-storage units (not shown).Energy-storage units adopts accumulator or ultracapacitor, and the electric energy that it gathers for storing collecting unit, so that the electric energy collection device only by silicon controlled rectifier 1 just can meet the electric power supply of driver element 3.Because the electric energy from silicon controlled rectifier 1 anode and the collection of negative electrode two ends just can give driver element 3 power supplies, therefore the earth potential of driver element 3 is consistent the negative electrode with silicon controlled rectifier 1 or anode, thereby can cancel in design the isolation between driver element 3 and silicon controlled rectifier 1, and only retain the optical fiber isolation between driver element 3 and control module 2.So just can solve in prior art the problems such as the high and distorted signals of large scale, cost that the pulse transformer in conventional drive unit brings.
Below introduced by reference to the accompanying drawings according to silicon controlled rectifier electric energy collection device included in drive unit of the present invention.Although not shown in the drawings, those skilled in the art are to be understood that above-mentioned drive unit also should comprise a standby driving trigger element.Standby driving trigger element is while surpassing predetermined value for the anode at silicon controlled rectifier 1 and the voltage between negative electrode, while meeting trigger condition, trigger described driver element 3 and make its grid to described silicon controlled rectifier 1 that driving signal is provided, thereby make described silicon controlled rectifier 1 conducting.
According to one embodiment of present invention, standby driving trigger element can comprise a judging unit and an output unit.Wherein judging unit is for judging whether the anode of silicon controlled rectifier and the voltage between negative electrode surpass predetermined value, when output unit surpasses predetermined value for the anode at silicon controlled rectifier and the voltage between negative electrode, to driver element, exports a trigger pip.Like this, driver element 3 just provides driving signal so that silicon controlled rectifier 1 conducting to the grid of described silicon controlled rectifier 1 according to described trigger pip.Thus, in the situation that cannot working by external power source type of drive, according to self-powered drive pattern of the present invention, still can guarantee that silicon controlled rectifier 1 can be driven the needs conducting in the situation that and conducting, thereby guarantee the safe handling of silicon controlled rectifier 1 under particular surroundings.In other words, the trigger pulse out-of-shape that the passive triggering over-voltage protecting function of common silicon controlled rectifier 1 produces, easily damages silicon controlled rectifier 1.And adopt according to drive unit of the present invention, trigger pulse unification produces from driver element, thereby guarantees that silicon controlled rectifier 1 reliably triggers, and extends its serviceable life.
It will be appreciated by those skilled in the art that the present invention only usings above-described embodiment and be illustrated as preferred implementation.Do not departing from the basis of teachings of the present invention thought, those skilled in the art should expect various other versions.For example; the circuit diagram of the electric energy collection device of the silicon controlled rectifier shown in Fig. 6 is an embodiment; the present invention is not limited to this plants the electric energy collection device of silicon controlled rectifier; everyly can realize the object of the invention, the electric energy collection device that gathers out the silicon controlled rectifier that can supply with driver element electric energy from the uniform alternate electric field that anode and the negative electrode of silicon controlled rectifier generates is all within the scope of protection of the invention.In addition, the sheet metal or the metal forming that adopted are in an embodiment preferably rectangular copper foil, but the metal forming that also can be formed by other suitable metals.In addition, in an embodiment, the output unit that standby driving trigger element comprises is exported a trigger pip to driver element when the anode of silicon controlled rectifier and the voltage between negative electrode surpass predetermined value.But those skilled in the art should also can expect output unit and also can export the mode of trigger pip driver element is triggered.
It should be noted that above-described embodiment signal and unrestricted the present invention and those skilled in the art should design various alternate embodiments in the situation that not departing from claims scope.In claims, any Reference numeral in bracket should be understood as is limitations on claims.Word " comprises " not getting rid of and has element or the step of not enumerating in claim or instructions.Word " one " before element or " one " do not get rid of and have a plurality of this elements.In having enumerated the system claim of several unit, several can the enforcement by same class software and/or hardware in these elements.Use word " first ", " second " and " the 3rd " etc. not to represent any ordinal relation.These Word Understandings should be become to title.
Claims (9)
1. a silicon controlled rectifier electric energy collection device, comprising:
Voltage acquiring unit, it comprises the first current-carrying plate, the second current-carrying plate and insulating medium, described the first current-carrying plate is electrically connected to an electrode of described silicon controlled rectifier, described the second current-carrying plate is between two electrodes of described silicon controlled rectifier, and described insulating medium is between described the first current-carrying plate and the second current-carrying plate;
Voltage transformation module, is electrically connected to described the first current-carrying plate and the second current-carrying plate, for the AC voltage conversion that described voltage acquiring unit is obtained, is that galvanic current is pressed.
2. silicon controlled rectifier electric energy collection device as claimed in claim 1, wherein, voltage transformation module further comprises:
Rectification circuit unit, for being pulsating dc voltage by described AC voltage conversion,
Circuit of reversed excitation unit, for by the electrical power storage of described rectification circuit unit output and pass to described voltage regulation unit;
Described voltage regulation unit, for being transformed to stable DC voltage by described pulsating dc voltage.
3. silicon controlled rectifier electric energy collection device as claimed in claim 2, wherein, described voltage transformation module further comprises on-off circuit, makes described rectification circuit cell conduction while surpassing predetermined value for the anode when described silicon controlled rectifier and the voltage between negative electrode.
4. silicon controlled rectifier electric energy collection device as claimed in claim 1, is characterized in that, further comprises energy-storage units, for storing the electric energy of described change in voltage unit output.
5. silicon controlled rectifier electric energy collection device as claimed in claim 1, is characterized in that, the ac voltage that voltage acquiring unit obtains is by described the first current-carrying plate and described the second current-carrying plate distance, and/or the relative dielectric constant of insulating medium regulates.
6. a drive unit for silicon controlled rectifier, comprising:
Driver element, provides driving signal for the grid to described silicon controlled rectifier;
Silicon controlled rectifier electric energy collection device as described in claim 1-5, in the situation of power cut-off at least externally for described driver element provides electric energy.
7. the drive unit of silicon controlled rectifier as claimed in claim 6, further comprise: standby driving trigger element, for when the anode of described silicon controlled rectifier and the voltage between negative electrode are during over predetermined value, trigger described driver element and make its grid to described silicon controlled rectifier that driving signal is provided.
8. the drive unit of silicon controlled rectifier as claimed in claim 7, further comprises: described standby driving trigger element provides electric energy by described electric energy collection device.
9. the drive unit of silicon controlled rectifier as claimed in claim 6, is characterized in that, the required electric energy of described driver element is all supplied by described electric energy collection device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110323931A (en) * | 2019-08-15 | 2019-10-11 | 荣信汇科电气技术有限责任公司 | A kind of redundancy trigger circuit comprising state feedback function |
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| US5028825A (en) * | 1989-10-18 | 1991-07-02 | International Business Machines Corporation | Self-powered SCR gate drive circuit with optical isolation |
| US5796599A (en) * | 1997-03-12 | 1998-08-18 | Reliance Electric Industrial Company | Self-powered gate driver board |
| US20030016073A1 (en) * | 2001-07-20 | 2003-01-23 | Vg Controls | Semiconductor high voltage electrical energy transmission switching system and method |
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| CN110323931A (en) * | 2019-08-15 | 2019-10-11 | 荣信汇科电气技术有限责任公司 | A kind of redundancy trigger circuit comprising state feedback function |
| CN110323931B (en) * | 2019-08-15 | 2024-05-10 | 荣信汇科电气股份有限公司 | Redundant trigger circuit containing state feedback function |
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| CN103675439B (en) | 2017-08-04 |
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